934058889112 [NXP]
L BAND, Si, N-CHANNEL, RF POWER, MOSFET, CERAMIC PACKAGE-2;
| 型号： | 934058889112 |
| 厂家： | 
NXP |
| 描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET, CERAMIC PACKAGE-2 放大器 CD 晶体管 |
| 文件： | 总13页 (文件大小：76K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BLA1011-200; BLA1011S-200
Avionics LDMOS transistor
Rev. 08 — 26 October 2005
Product data sheet
1. Product profile
1.1 General description
200 W LDMOS avionics power transistor for transmitter applications at frequencies from
1030 MHz to 1090 MHz.
Table 1:
Typical performance
RF performance at Th = 25 °C in a common source class-AB test circuit; IDq = 150 mA; typical
values.
Mode of operation
Conditions
VDS
(V)
PL
(W)
Gp
(dB) (%)
ηD
tr
(ns)
tf
(ns)
Pulsed class-AB:
1030 MHz to 1090 MHz
tp = 50 µs; δ = 2 %
tp = 128 µs; δ = 2 %
tp = 340 µs; δ = 1 %
36
36
36
200
250
250
15
14
14
50
50
50
35
35
35
6
6
6
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
■ Typical pulsed class-AB performance at a frequencies from 1030 MHz to 1090 MHz, a
supply voltage of 36 V and an IDq of 150 mA:
◆ Load power ≥ 200 W
◆ Gain ≥ 13 dB
◆ Efficiency ≥ 45 %
◆ Rise time ≤ 50 ns
◆ Fall time ≤ 50 ns
■ High power gain
■ Easy power control
■ Excellent ruggedness
■ Source on mounting flange eliminates DC isolators, reducing common mode
inductance
1.3 Applications
■ Avionics transmitter applications in the 1030 MHz to 1090 MHz frequency range.
BLA1011-200; BLA1011S-200
Philips Semiconductors
Avionics LDMOS transistor
2. Pinning information
Table 2:
Pin
Pinning
Description
Simplified outline
Symbol
BLA1011-200 (SOT502A)
1
2
3
drain
gate
1
3
1
3
2
[1]
2
source
sym039
BLA1011S-200 (SOT502B)
1
2
3
drain
gate
1
3
1
3
2
[1]
2
source
sym039
[1] Connected to flange
3. Ordering information
Table 3:
Ordering information
Type number
Package
Name Description
Version
BLA1011-200
-
flanged LDMOST ceramic package; 2 mounting holes;
2 leads
SOT502A
BLA1011S-200
-
earless flanged LDMOST ceramic package; 2 leads
SOT502B
4. Limiting values
Table 4:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
VGS
Ptot
Parameter
Conditions
Min
Max Unit
drain-source voltage
gate-source voltage
total power dissipation
storage temperature
junction temperature
-
75
V
-
±22
700
V
Th ≤ 25 °C; tp = 50 µs; δ = 2 %
-
W
Tstg
−65
+150 °C
200 °C
Tj
-
9397 750 14634
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 08 — 26 October 2005
2 of 13
BLA1011-200; BLA1011S-200
Philips Semiconductors
Avionics LDMOS transistor
5. Thermal characteristics
Table 5:
Thermal characteristics
Symbol Parameter
Conditions
Typ
Unit
[1]
Zth(j-h)
thermal impedance from junction to heatsink Th = 25 °C
0.15
K/W
[1] Thermal resistance is determined under RF operating conditions; tp = 50 µs, δ = 10 %.
6. Characteristics
Table 6:
Characteristics
Tj = 25 °C unless otherwise specified
Symbol Parameter
Conditions
Min Typ Max Unit
V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 3 mA
75
4
-
-
-
-
-
V
VGS(th)
IDSS
gate-source threshold voltage
drain leakage current
VDS = 10 V; ID = 300 mA
VGS = 0 V; VDS = 36 V
VGS = VGS(th) + 9 V;
5
1
-
V
-
µA
A
IDSX
drain cut-off current
45
VDS = 10 V
IGSS
gfs
gate leakage current
transfer conductance
VGS = ±20 V; VDS = 0 V
-
-
-
-
1
-
µA
S
VDS = 10 V; ID = 10 A
9
RDS(on) drain-source on-state resistance VGS = 9 V; ID = 10 A
60
-
mΩ
7. Application information
Table 7:
Application information
RF performance in a common source pulsed class-AB circuit; (tp = 50 µs; δ = 2 %); f = 1030 MHz
and 1090 MHz; Th = 25 °C; Zth(mb-h) = 0.15 K/W; IDq = 150 mA; unless otherwise specified.
Symbol Parameter
Conditions
Min
Typ
Max
Unit
V
VDS
PL
Gp
ηD
tr
drain-source voltage
-
36
-
load power
power gain
drain efficiency
rise time
tp = 50 µs; δ = 2 %
PL = 200 W
-
200
W
13
45
-
-
-
-
-
dB
%
tp = 50 µs; δ = 2 %
50
50
ns
ns
tf
fall time
-
7.1 Ruggedness in class-AB operation
The BLA1011-200 and BLA1011S-200 are capable of withstanding a load mismatch
corresponding to VSWR = 5 : 1 through all phases under the following conditions:
VDS = 36 V; f = 1030 MHz to 1090 MHz at rated load power.
9397 750 14634
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 08 — 26 October 2005
3 of 13
BLA1011-200; BLA1011S-200
Philips Semiconductors
Avionics LDMOS transistor
mgw033
mgw034
20
80
250
P
L
η
G
p
D
(W)
200
(%)
(dB)
G
p
15
10
5
60
150
100
50
40
20
0
η
D
0
0
0
50
100
150
200
250
0
2
4
6
8
P
(W)
P
(W)
D
L
VDS = 36 V; IDq = 150 mA; f = 1060 MHz; tp = 50 µs;
δ = 2 %
VDS = 36 V; IDq = 150 mA; f = 1060 MHz; tp = 50 µs;
δ = 2 %
Fig 1. Power gain and drain efficiency as functions of
load power; typical values
Fig 2. Load power as a function of drive power;
typical values
mgw035
mgw036
250
20
20
G
P
G
p
p
L
(dB)
16
I
(W)
(dB)
16
Dq
= 1.5 A
150 mA
200
G
p
150
100
50
12
8
12
8
P
L
4
4
0
0
0
0
50
100
150
200
250
(W)
0
1
2
3
4
5
P
V
(V)
GS
L
VDS = 36 V; f = 1060 MHz; tp = 50 µs; δ = 2 %
VDS = 36 V; IDq = 150 mA; Pi = 5.5 W; f = 1060 MHz;
tp = 50 µs; δ = 2 %
Fig 3. Power gain as a function of load power; typical
values
Fig 4. Load power and power gain as functions of
gate-source voltage; typical values
9397 750 14634
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 08 — 26 October 2005
4 of 13
BLA1011-200; BLA1011S-200
Philips Semiconductors
Avionics LDMOS transistor
mgw037
mgw038
20
80
5
Z
i
η
G
p
D
(W)
x
i
(%)
(dB)
G
p
4
15
10
5
60
r
i
3
2
1
η
D
40
20
0
0
0
1020
1040
1060
1080
1100
f (MHz)
1020
1040
1060
1080
1100
f (MHz)
VDS = 36 V; IDq = 150 mA; PL = 200 W; tp = 50 µs;
δ = 2 %
VDS = 36 V; IDq = 150 mA; PL = 200 W; tp = 50 µs;
δ = 2 %
Fig 5. Power gain and drain efficiency a functions of
frequency; typical values
Fig 6. Input Impedance as a function of frequency
(series components); typical values
mgw039
4
Z
L
(W)
2
R
X
L
L
0
−2
−4
1020
1040
1060
1080
1100
f (MHz)
VDS = 36 V; IDq = 150 mA; PL = 200 W; tp = 50 µs; δ = 2 %
Fig 7. Load impedance as a function of frequency (series components); typical values
9397 750 14634
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 08 — 26 October 2005
5 of 13
BLA1011-200; BLA1011S-200
Philips Semiconductors
Avionics LDMOS transistor
8. Test information
40
40
60
C6
+
C10
C5
C9
C11
R2
C4
R1
C8
L1
C3
C7
C1
C2
mgw032
Dimensions in mm.
The components are situated on one side of the copper-clad Duroid Printed-Circuit Board (PCB) with εr = 6.2 and thickness
0.64 mm.
The other side is unetched and serves as a ground plane.
See Table 8 for list of components.
Fig 8. Component layout for 1030 MHz to 1090 MHz test circuit
9397 750 14634
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 08 — 26 October 2005
6 of 13
BLA1011-200; BLA1011S-200
Philips Semiconductors
Avionics LDMOS transistor
Table 8:
List of components (see Figure 8)
Component Description
Value
Dimensions
[1]
[2]
[1]
[1]
[1]
C1
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
electrolytic capacitor
39 pF
C2
4.3 pF
11 pF
C3
C4, C7
C5
62 pF
100 pF
47 µF; 20 V
20 pF
C6
[2]
[1]
[3]
C8
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
electrolytic capacitor
C9
47 pF
C10
C11
L1
1.2 nF
47 µF; 63V
Ω-shaped enamelled 1 mm copper wire
metal film resistor
length = 38 mm
R1
301 Ω
18 Ω
R2
SMD 0508 resistor
[1] American Technical Ceramics type 100A or capacitor of same quality.
[2] American Technical Ceramics type 100B or capacitor of same quality.
[3] American Technical Ceramics type 700 or capacitor of same quality.
9397 750 14634
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 08 — 26 October 2005
7 of 13
BLA1011-200; BLA1011S-200
Philips Semiconductors
Avionics LDMOS transistor
9. Package outline
Flanged LDMOST ceramic package; 2 mounting holes; 2 leads
SOT502A
D
A
F
3
D
1
U
1
B
q
c
C
1
L
p
E
E
H
U
1
2
w
M
M
M
B
A
1
A
2
w
5
b
M
M
C
Q
2
0
10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
c
A
b
D
D
E
E
F
H
L
p
Q
q
U
U
w
w
2
UNIT
1
1
1
2
1
12.83
12.57
3.38
3.12
1.70
1.45
4.72
3.43
20.02 19.96 9.50
19.61 19.66 9.30
9.53
9.25
1.14 19.94 5.33
0.89 18.92 4.32
34.16 9.91
33.91 9.65
0.15
0.08
27.94
1.100
0.25
0.01
0.51
0.02
mm
0.505
0.495
0.133 0.067
0.123 0.057
0.186
0.135
0.788 0.786 0.374 0.375 0.045 0.785 0.210
0.772 0.774 0.366 0.364 0.035 0.745 0.170
1.345 0.390
1.335 0.380
0.006
0.003
inches
REFERENCES
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
JEDEC
JEITA
99-12-28
03-01-10
SOT502A
Fig 9. Package outline SOT502A
9397 750 14634
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 08 — 26 October 2005
8 of 13
BLA1011-200; BLA1011S-200
Philips Semiconductors
Avionics LDMOS transistor
Earless flanged LDMOST ceramic package; 2 leads
SOT502B
D
A
F
3
D
D
1
c
U
1
1
L
E
E
H
U
1
2
2
w
5
b
M
M
D
Q
2
0
10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
c
A
b
D
D
E
E
F
H
L
Q
U
U
w
UNIT
1
1
1
2
2
12.83
12.57
1.70
1.45
4.72
3.43
20.02 19.96 9.50
19.61 19.66 9.30
9.53
9.25
1.14 19.94 5.33
0.89 18.92 4.32
20.70 9.91
20.45 9.65
0.15
0.08
0.25
mm
0.505
0.495
0.067
0.057
0.186
0.135
0.788 0.786 0.374 0.375 0.045 0.785 0.210
0.772 0.774 0.366 0.364 0.035 0.745 0.170
0.815 0.390
0.805 0.380
0.006
0.003
0.010
inches
REFERENCES
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
JEDEC
JEITA
99-12-28
03-01-10
SOT502B
Fig 10. Package outline SOT502B
9397 750 14634
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 08 — 26 October 2005
9 of 13
BLA1011-200; BLA1011S-200
Philips Semiconductors
Avionics LDMOS transistor
10. Abbreviations
Table 9:
Acronym
IDq
Abbreviations
Description
quiescent drain current
LDMOS
RF
Laterally Diffused Metal Oxide Semiconductor
Radio Frequency
SMD
Surface Mount Device
VSWR
Voltage Standing Wave Ratio
9397 750 14634
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 08 — 26 October 2005
10 of 13
BLA1011-200; BLA1011S-200
Philips Semiconductors
Avionics LDMOS transistor
11. Revision history
Table 10: Revision history
Document ID
Release date Data sheet status
Change notice Doc. number
Supersedes
BLA1011-200_BLA1 20051026
011S-200_8
Product data sheet
-
9397 750 14634 BLA1011-200_7
Modifications:
• The format of this data sheet has been redesigned to comply with the new presentation and
information standard of Philips Semiconductors.
• SOT502B package added.
BLA1011-200_7
BLA1011-200_6
BLA1011-200_5
BLA1011-200_4
20031111
20020318
20010515
20010417
Product specification
Product specification
Product specification
Product specification
Product specification
Product specification
Product specification
-
-
-
-
-
-
-
9397 750 12246 BLA1011-200_6
9397 750 09414 BLA1011-200_5
9397 750 08376 BLA1011-200_4
9397 750 08139 BLA1011-200_N_3
9397 750 08109 BLA1011-200_N_2
9397 750 07638 BLA1011-200_N_1
BLA1011-200_N_3 20010302
BLA1011-200_N_2 20001201
BLA1011-200_N_1 20000906
9397 750 07326
-
9397 750 14634
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 08 — 26 October 2005
11 of 13
BLA1011-200; BLA1011S-200
Philips Semiconductors
Avionics LDMOS transistor
12. Data sheet status
Level Data sheet status[1] Product status[2] [3]
Definition
I
Objective data
Development
This data sheet contains data from the objective specification for product development. Philips
Semiconductors reserves the right to change the specification in any manner without notice.
II
Preliminary data
Qualification
This data sheet contains data from the preliminary specification. Supplementary data will be published
at a later date. Philips Semiconductors reserves the right to change the specification without notice, in
order to improve the design and supply the best possible product.
III
Product data
Production
This data sheet contains data from the product specification. Philips Semiconductors reserves the
right to make changes at any time in order to improve the design, manufacturing and supply. Relevant
changes will be communicated via a Customer Product/Process Change Notification (CPCN).
[1]
[2]
Please consult the most recently issued data sheet before initiating or completing a design.
The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at
URL http://www.semiconductors.philips.com.
[3]
For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
customers using or selling these products for use in such applications do so
at their own risk and agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
13. Definitions
Short-form specification — The data in a short-form specification is
extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.
Right to make changes — Philips Semiconductors reserves the right to
make changes in the products - including circuits, standard cells, and/or
software - described or contained herein in order to improve design and/or
performance. When the product is in full production (status ‘Production’),
relevant changes will be communicated via a Customer Product/Process
Change Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no
license or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products are
free from patent, copyright, or mask work right infringement, unless otherwise
specified.
Limiting values definition — Limiting values given are in accordance with
the Absolute Maximum Rating System (IEC 60134). Stress above one or
more of the limiting values may cause permanent damage to the device.
These are stress ratings only and operation of the device at these or at any
other conditions above those given in the Characteristics sections of the
specification is not implied. Exposure to limiting values for extended periods
may affect device reliability.
Application information — Applications that are described herein for any
of these products are for illustrative purposes only. Philips Semiconductors
make no representation or warranty that such applications will be suitable for
the specified use without further testing or modification.
15. Trademarks
Notice — All referenced brands, product names, service names and
14. Disclaimers
trademarks are the property of their respective owners.
Life support — These products are not designed for use in life support
appliances, devices, or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors
16. Contact information
For additional information, please visit: http://www.semiconductors.philips.com
For sales office addresses, send an email to: sales.addresses@www.semiconductors.philips.com
9397 750 14634
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 08 — 26 October 2005
12 of 13
BLA1011-200; BLA1011S-200
Philips Semiconductors
Avionics LDMOS transistor
17. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1
1.2
1.3
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
2
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
Ordering information. . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics. . . . . . . . . . . . . . . . . . . 3
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3
Application information. . . . . . . . . . . . . . . . . . . 3
Ruggedness in class-AB operation. . . . . . . . . . 3
Test information. . . . . . . . . . . . . . . . . . . . . . . . . 6
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8
Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 11
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 12
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Contact information . . . . . . . . . . . . . . . . . . . . 12
3
4
5
6
7
7.1
8
9
10
11
12
13
14
15
16
© Koninklijke Philips Electronics N.V. 2005
All rights are reserved. Reproduction in whole or in part is prohibited without the prior
written consent of the copyright owner. The information presented in this document does
not form part of any quotation or contract, is believed to be accurate and reliable and may
be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under
patent- or other industrial or intellectual property rights.
Date of release: 26 October 2005
Document number: 9397 750 14634
Published in The Netherlands
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