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934065972112 [NXP]

S BAND, Si, N-CHANNEL, RF POWER, MOSFET, ROHS COMPLIANT, CERAMIC PACKAGE-2;
934065972112
型号： 934065972112
厂家： NXP    NXP
描述：

S BAND, Si, N-CHANNEL, RF POWER, MOSFET, ROHS COMPLIANT, CERAMIC PACKAGE-2

放大器 CD 晶体管
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BLS6G2735L-30;  
BLS6G2735LS-30  
S-band LDMOS transistor  
Rev. 3 — 24 September 2012  
Product data sheet  
1. Product profile  
1.1 General description  
30 W LDMOS power transistor for S-band radar applications in the frequency range from  
2.7 GHz to 3.5 GHz.  
Table 1.  
Application information  
Typical RF performance at Tcase = 25 C; tp = 300 s; = 10 %; IDq = 50 mA.  
Test signal  
f
VDS  
(V)  
PL  
Gp  
D  
tr  
tf  
(GHz)  
(W)  
(dB)  
(%)  
(ns)  
(ns)  
Typical RF performance in a class-AB production test circuit in band 3.1 GHz to 3.5 GHz  
pulsed RF  
Typical RF performance in an application circuit in small band 2.7 GHz to 3.3 GHz  
pulsed RF 2.7 to 3.3 32 35 14 50 20  
Typical RF performance in an application circuit in small band 2.7 GHz to 3.5 GHz  
pulsed RF 2.7 to 3.5 32 30 12 47 20  
3.1 to 3.5 32  
30  
13  
50  
20  
10  
10  
10  
1.2 Features and benefits  
Integrated ESD protection  
Excellent ruggedness  
High efficiency  
Excellent thermal stability  
Designed for broadband operation (2.7 GHz to 3.5 GHz)  
Internally matched for ease of use  
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances  
(RoHS)  
1.3 Applications  
S-band radar applications in the frequency range 2.7 GHz to 3.5 GHz  
BLS6G2735L-30; BLS6G2735LS-30  
NXP Semiconductors  
S-band LDMOS transistor  
2. Pinning information  
Table 2.  
Pin  
Pinning  
Description  
Simplified outline  
Graphic symbol  
BLS6G2735L-30 (SOT1135A)  
1
2
3
drain  
gate  
1
1
[1]  
source  
2
3
3
sym112  
2
BLS6G2735LS-30 (SOT1135B)  
1
2
3
drain  
gate  
1
1
[1]  
source  
2
3
3
sym112  
2
[1] Connected to flange.  
3. Ordering information  
Table 3.  
Ordering information  
Type number  
Package  
Name Description  
Version  
BLS6G2735L-30  
BLS6G2735LS-30  
-
-
flanged ceramic package; 2 mounting holes; 2 leads  
earless flanged ceramic package; 2 leads  
SOT1135A  
SOT1135B  
4. Limiting values  
Table 4.  
Limiting values  
In accordance with the Absolute Maximum Rating System (IEC 60134).  
Symbol  
VDS  
Parameter  
Min  
-
Max  
60  
Unit  
V
drain-source voltage  
gate-source voltage  
storage temperature  
junction temperature  
VGS  
Tstg  
0.5  
65  
-
+13  
+150  
225  
V
C  
C  
Tj  
BLS6G2735L-30_6G2735LS-30  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2012. All rights reserved.  
Product data sheet  
Rev. 3 — 24 September 2012  
2 of 17  
BLS6G2735L-30; BLS6G2735LS-30  
NXP Semiconductors  
S-band LDMOS transistor  
5. Thermal characteristics  
Table 5.  
Thermal characteristics  
Symbol Parameter  
Conditions  
Typ  
Unit  
Zth(j-c)  
transient thermal impedance from junction Th = 85 C; PL(CW) = 30 W  
to case  
tp = 100 s; = 10 %  
0.507 K/W  
0.662 K/W  
0.761 K/W  
0.594 K/W  
tp = 200 s; = 10 %  
tp = 300 s; = 10 %  
tp = 100 s; = 20 %  
6. Characteristics  
Table 6.  
DC characteristics  
Tj = 25 C unless otherwise specified.  
Symbol Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
V(BR)DSS drain-source breakdown  
voltage  
VGS = 0 V; ID = 0.5 mA  
65  
-
-
V
VGS(th)  
IDSS  
gate-source threshold voltage VDS = 10 V; ID = 40 mA  
1.4  
2
2.4  
1.4  
-
V
drain leakage current  
drain cut-off current  
VGS = 0 V; VDS = 28 V  
-
-
-
A  
A
IDSX  
VGS = VGS(th) + 3.75 V;  
VDS = 10 V  
8.2  
IGSS  
gfs  
gate leakage current  
VGS = 8.3 V; VDS = 0 V  
VDS = 10 V; ID = 1.4 A  
-
-
-
-
140  
-
nA  
S
forward transconductance  
2.8  
0.37  
RDS(on) drain-source on-state  
resistance  
VGS = VGS(th) + 3.75 V;  
ID = 1.4 A  
0.58  
Table 7.  
RF characteristics  
Test signal: pulsed RF; f1 = 3100 MHz; f2 = 3300 MHz; f3 = 3500 MHz; tp = 300 s; = 10 %;  
VDS = 32 V; IDq = 50 mA; Tcase = 25 C; unless otherwise specified, in the class-AB RF production  
test circuit.  
Symbol  
Parameter  
output power  
power gain  
drain efficiency  
rise time  
Conditions Min Typ  
Max Unit  
PL  
Gp  
D  
tr  
-
30  
13  
50  
20  
10  
-
W
dB  
%
PL = 30 W  
PL = 30 W  
PL = 30 W  
PL = 30 W  
11  
43  
-
-
-
50  
50  
ns  
ns  
tf  
fall time  
-
BLS6G2735L-30_6G2735LS-30  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2012. All rights reserved.  
Product data sheet  
Rev. 3 — 24 September 2012  
3 of 17  
BLS6G2735L-30; BLS6G2735LS-30  
NXP Semiconductors  
S-band LDMOS transistor  
7. Application information  
7.1 Circuit information for application circuit (2.7 GHz to 3.5 GHz)  
V
DD  
C6  
C5  
C4  
C2  
C3  
C1  
V
GG  
C7  
aaa-001308  
Printed-Circuit Board (PCB): Rogers 3006; r = 6.15; thickness = 0.64 mm;  
thickness copper plating = 35 m.  
See Table 8 for a list of components.  
Fig 1. Component layout for RF test circuit  
Table 8.  
List of components  
For test circuit see Figure 1.  
Component  
Description  
Value  
Remarks  
[1]  
[2]  
[2]  
[2]  
[1]  
C1  
multilayer ceramic chip capacitor  
multilayer ceramic chip capacitor  
multilayer ceramic chip capacitor  
multilayer ceramic chip capacitor  
multilayer ceramic chip capacitor  
electrolytic capacitor  
2 F, 50 V  
100 pF  
C2  
C3  
0.6 pF  
C4, C7  
C5  
10 pF  
1 F, 50 V  
470 F, 63 V  
C6  
[1] TDK or capacitor of same quality.  
[2] American Technical Ceramics type 800A or capacitor of same quality.  
BLS6G2735L-30_6G2735LS-30  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2012. All rights reserved.  
Product data sheet  
Rev. 3 — 24 September 2012  
4 of 17  
BLS6G2735L-30; BLS6G2735LS-30  
NXP Semiconductors  
S-band LDMOS transistor  
7.2 Measured in application circuit from 2.7 GHz to 3.5 GHz  
aaa-001302  
aaa-001303  
35  
70  
50  
(1)  
(2)  
(3)  
(4)  
(5)  
(6)  
(7)  
(8)  
(9)  
G
p
η
D
P
L
(dB)  
(%)  
(W)  
(5) (4) (3) (2) (1)  
30  
60  
η
40  
D
25  
20  
15  
10  
5
50  
40  
30  
20  
10  
0
30  
20  
10  
0
G
p
(5) (4) (3) (2) (1)  
0
0
10  
20  
30  
40  
50  
0
1
2
3
4
P
(W)  
P (W)  
i
L
VDS = 32 V; IDq = 50 mA; tp = 300 s; = 10 %  
VDS = 32 V; IDq = 50 mA; tp = 300 s; = 10 %  
(1) f = 2700 MHz  
(2) f = 2900 MHz  
(3) f = 3100 MHz  
(4) f = 3300 MHz  
(5) f = 3500 MHz  
(1) f = 2700 MHz  
(2) f = 2800 MHz  
(3) f = 2900 MHz  
(4) f = 3000 MHz  
(5) f = 3100 MHz  
(6) f = 3200 MHz  
(7) f = 3300 MHz  
(8) f = 3400 MHz  
(9) f = 3500 MHz  
Fig 2. Power gain and drain efficiency as function of  
output power; typical values  
Fig 3. Output power as a function of input power;  
typical values  
BLS6G2735L-30_6G2735LS-30  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2012. All rights reserved.  
Product data sheet  
Rev. 3 — 24 September 2012  
5 of 17  
BLS6G2735L-30; BLS6G2735LS-30  
NXP Semiconductors  
S-band LDMOS transistor  
aaa-001304  
20  
RL  
in  
(dB)  
(1) (2) (3) (4) (5) (6) (7) (8) (9)  
15  
10  
5
0
28  
33  
38  
43  
48  
P
L
(dBm)  
VDS = 32 V; IDq = 50 mA; tp = 300 s; = 10 %  
(1) f = 2700 MHz  
(2) f = 2800 MHz  
(3) f = 2900 MHz  
(4) f = 3000 MHz  
(5) f = 3100 MHz  
(6) f = 3200 MHz  
(7) f = 3300 MHz  
(8) f = 3400 MHz  
(9) f = 3500 MHz  
Fig 4. Input return loss as a function of output power; typical values  
BLS6G2735L-30_6G2735LS-30  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2012. All rights reserved.  
Product data sheet  
Rev. 3 — 24 September 2012  
6 of 17  
BLS6G2735L-30; BLS6G2735LS-30  
NXP Semiconductors  
S-band LDMOS transistor  
aaa-001305  
aaa-001306  
35  
70  
50  
(1)  
(2)  
(3)  
(4)  
(5)  
(6)  
(7)  
(8)  
(9)  
G
p
η
D
P
L
(dB)  
(%)  
(W)  
(5) (4) (3) (2) (1)  
30  
60  
η
40  
D
25  
20  
15  
10  
5
50  
40  
30  
20  
10  
0
30  
20  
10  
0
G
p
(5) (4) (3) (2) (1)  
0
0
10  
20  
30  
40  
50  
0
1
2
3
4
P
(W)  
P (W)  
i
L
VDS = 32 V; IDq = 50 mA; tp = 100 s; = 20 %  
VDS = 32 V; IDq = 50 mA; tp = 100 s; = 20 %  
(1) f = 2700 MHz  
(2) f = 2900 MHz  
(3) f = 3100 MHz  
(4) f = 3300 MHz  
(5) f = 3500 MHz  
(1) f = 2700 MHz  
(2) f = 2800 MHz  
(3) f = 2900 MHz  
(4) f = 3000 MHz  
(5) f = 3100 MHz  
(6) f = 3200 MHz  
(7) f = 3300 MHz  
(8) f = 3400 MHz  
(9) f = 3500 MHz  
Fig 5. Power gain and drain efficiency as function of  
output power; typical values  
Fig 6. Output power as a function of input power;  
typical values  
BLS6G2735L-30_6G2735LS-30  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2012. All rights reserved.  
Product data sheet  
Rev. 3 — 24 September 2012  
7 of 17  
BLS6G2735L-30; BLS6G2735LS-30  
NXP Semiconductors  
S-band LDMOS transistor  
aaa-001307  
20  
RL  
in  
(dB)  
(1) (2) (3) (4) (5) (6) (7) (8) (9)  
15  
10  
5
0
28  
33  
38  
43  
48  
P
L
(dBm)  
VDS = 32 V; IDq = 50 mA; tp = 100 s; = 20 %  
(1) f = 2700 MHz  
(2) f = 2800 MHz  
(3) f = 2900 MHz  
(4) f = 3000 MHz  
(5) f = 3100 MHz  
(6) f = 3200 MHz  
(7) f = 3300 MHz  
(8) f = 3400 MHz  
(9) f = 3500 MHz  
Fig 7. Input return loss as a function of output power; typical values  
BLS6G2735L-30_6G2735LS-30  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2012. All rights reserved.  
Product data sheet  
Rev. 3 — 24 September 2012  
8 of 17  
BLS6G2735L-30; BLS6G2735LS-30  
NXP Semiconductors  
S-band LDMOS transistor  
8. Test information  
8.1 Ruggedness in class-AB operation  
The BLS6G2735L-30 and BLS6G2735LS-30 are capable of withstanding a load mismatch  
corresponding to VSWR = 10 : 1 through all phases under the following conditions:  
V
DS = 32 V; IDq = 50 mA; PL = 30 W; tp = 300 s; = 10 %.  
8.2 Impedance information  
Table 9.  
Typical impedance  
Source and load impedances obtained in a wideband test circuit.  
f
ZS  
ZL  
GHz  
2.7  
2.9  
3.1  
3.3  
3.5  
3.4 j16.0  
4.3 j13.0  
5.4 j11.6  
5.4 j12.0  
3.7 j11.7  
32.7 j3.8  
20.3 j4.2  
18.3 j3.9  
15.0 j7.2  
8.4 j6.6  
drain  
Z
L
gate  
Z
S
001aaf059  
Fig 8. Definition of transistor impedance  
BLS6G2735L-30_6G2735LS-30  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2012. All rights reserved.  
Product data sheet  
Rev. 3 — 24 September 2012  
9 of 17  
BLS6G2735L-30; BLS6G2735LS-30  
NXP Semiconductors  
S-band LDMOS transistor  
8.3 Circuit information for production test circuit (3.1 GHz to 3.5 GHz)  
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Printed-Circuit Board (PCB): Rogers Duroid 6006; r = 6.15; thickness = 0.64 mm;  
thickness copper plating = 35 m.  
See Table 10 for a list of components.  
Fig 9. Component layout for RF production test circuit  
Table 10. List of components  
For test circuit see Figure 9.  
Component  
Description  
Value  
Remarks  
[1]  
[2]  
[2]  
[2]  
C1, C3, C4, C8 multilayer ceramic chip capacitor  
10 pF  
C2  
C5  
C6  
C7  
R1  
multilayer ceramic chip capacitor  
multilayer ceramic chip capacitor  
multilayer ceramic chip capacitor  
electrolytic capacitor  
1 F  
4.7 F, 50 V  
10 F, 50 V  
100 F, 63 V  
10   
SMD resistor  
[1] American Technical Ceramics type 800A or capacitor of same quality.  
[2] TDK or capacitor of same quality.  
BLS6G2735L-30_6G2735LS-30  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2012. All rights reserved.  
Product data sheet  
Rev. 3 — 24 September 2012  
10 of 17  
BLS6G2735L-30; BLS6G2735LS-30  
NXP Semiconductors  
S-band LDMOS transistor  
8.4 Measured in RF production test circuit from 3.1 GHz to 3.5 GHz  
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VDS = 32 V; IDq = 50 mA; tp = 300 s; = 10 %  
VDS = 32 V; IDq = 50 mA; tp = 300 s; = 10 %  
(1) f = 3100 MHz  
(2) f = 3300 MHz  
(3) f = 3500 MHz  
(1) f = 3100 MHz  
(2) f = 3300 MHz  
(3) f = 3500 MHz  
Fig 10. Power gain and drain efficiency as function of  
output power; typical values  
Fig 11. Output power as a function of input power;  
typical values  
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VDS = 32 V; IDq = 50 mA; tp = 100 s; = 20 %  
VDS = 32 V; IDq = 50 mA; tp = 100 s; = 20 %  
(1) f = 3100 MHz  
(2) f = 3300 MHz  
(3) f = 3500 MHz  
(1) f = 3100 MHz  
(2) f = 3300 MHz  
(3) f = 3500 MHz  
Fig 12. Power gain and drain efficiency as function of  
output power; typical values  
Fig 13. Output power as a function of input power;  
typical values  
BLS6G2735L-30_6G2735LS-30  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2012. All rights reserved.  
Product data sheet  
Rev. 3 — 24 September 2012  
11 of 17  
BLS6G2735L-30; BLS6G2735LS-30  
NXP Semiconductors  
S-band LDMOS transistor  
9. Package outline  
Flanged ceramic package; 2 mounting holes; 2 leads  
SOT1135A  
D
A
F
D
U
1
B
C
1
q
c
1
p
U
2
E
1
H
E
w
1
A
B
3
A
2
b
w
2
C
Q
0
5
10 mm  
scale  
Dimensions  
(1)  
Unit  
A
b
c
D
D
1
E
E
1
F
H
p
Q
q
U
1
U
2
w
1
w
2
max 4.65 5.26 0.18 9.65 9.65 9.65 9.65 1.14 19.94 3.30 1.70  
mm nom  
min 3.76 5.00 0.10 9.40 9.40 9.40 9.40 0.89 18.92 2.92 1.45  
max 0.183 0.207 0.007 0.38 0.38 0.38 0.38 0.045 0.785 0.130 0.067  
inches nom  
min 0.148 0.197 0.004 0.37 0.37 0.37 0.37 0.035 0.745 0.115 0.057  
20.45 9.91  
15.24  
0.25 0.51  
0.01 0.02  
20.19 9.65  
0.805 0.39  
0.6  
0.795 0.38  
Note  
1. millimeter dimensions are derived from the original inch dimensions.  
2. dimension is measured 0.030 inch (0.76 mm) from the body.  
sot1135a_po  
References  
Outline  
version  
European  
projection  
Issue date  
IEC  
JEDEC  
JEITA  
09-10-12  
09-12-14  
SOT1135A  
Fig 14. Package outline SOT1135A  
BLS6G2735L-30_6G2735LS-30  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2012. All rights reserved.  
Product data sheet  
Rev. 3 — 24 September 2012  
12 of 17  
BLS6G2735L-30; BLS6G2735LS-30  
NXP Semiconductors  
S-band LDMOS transistor  
Earless flanged ceramic package; 2 leads  
SOT1135B  
D
A
F
3
D
D
1
U
1
c
1
U
2
E
1
H
E
2
b
w
2
D
Q
0
5
10 mm  
scale  
Dimensions  
(1)  
Unit  
A
b
c
D
D
1
E
E
1
F
H
Q
U
1
U
2
w
2
max 4.65 5.26 0.18 9.65 9.65 9.65 9.65 1.14 19.94 1.70 9.91 9.91  
mm nom  
0.51  
0.02  
min 3.76 5.00 0.10 9.40 9.40 9.40 9.40 0.89 18.92 1.45 9.65 9.65  
max 0.183 0.207 0.007 0.38 0.38 0.38 0.38 0.045 0.785 0.067 0.39 0.39  
inches nom  
min 0.148 0.197 0.004 0.37 0.37 0.37 0.37 0.035 0.745 0.057 0.38 0.38  
Note  
1. millimeter dimensions are derived from the original inch dimensions.  
2. dimension is measured 0.030 inch (0.76 mm) from the body.  
sot1135b_po  
References  
Outline  
version  
European  
projection  
Issue date  
IEC  
JEDEC  
JEITA  
09-10-12  
09-12-14  
SOT1135B  
Fig 15. Package outline SOT1135B  
BLS6G2735L-30_6G2735LS-30  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2012. All rights reserved.  
Product data sheet  
Rev. 3 — 24 September 2012  
13 of 17  
BLS6G2735L-30; BLS6G2735LS-30  
NXP Semiconductors  
S-band LDMOS transistor  
10. Handling information  
CAUTION  
This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling  
electrostatic sensitive devices.  
Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or  
equivalent standards.  
11. Abbreviations  
Table 11. Abbreviations  
Acronym  
LDMOS  
S-band  
VSWR  
Description  
Laterally Diffused Metal-Oxide Semiconductor  
Short wave Band  
Voltage Standing-Wave Ratio  
12. Revision history  
Table 12. Revision history  
Document ID  
Release date Data sheet status  
20120924 Product data sheet  
Change notice  
Supersedes  
BLS6G2735L-30_6G2735LS-30 v.3  
-
BLS6G2735L-30_  
6G2735LS-30 v.2  
Modifications:  
• The status of this document has been changed to Product data sheet  
BLS6G2735L-30_6G2735LS-30 v.2  
20120904  
Preliminary data sheet  
-
BLS6G2735L-30_  
6G2735LS-30 v.1  
BLS6G2735L-30_6G2735LS-30 v.1  
20111011  
Objective data sheet  
-
-
BLS6G2735L-30_6G2735LS-30  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2012. All rights reserved.  
Product data sheet  
Rev. 3 — 24 September 2012  
14 of 17  
BLS6G2735L-30; BLS6G2735LS-30  
NXP Semiconductors  
S-band LDMOS transistor  
13. Legal information  
13.1 Data sheet status  
Document status[1][2]  
Product status[3]  
Development  
Definition  
Objective [short] data sheet  
This document contains data from the objective specification for product development.  
This document contains data from the preliminary specification.  
This document contains the product specification.  
Preliminary [short] data sheet Qualification  
Product [short] data sheet Production  
[1]  
[2]  
[3]  
Please consult the most recently issued document before initiating or completing a design.  
The term ‘short data sheet’ is explained in section “Definitions”.  
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status  
information is available on the Internet at URL http://www.nxp.com.  
Suitability for use — NXP Semiconductors products are not designed,  
13.2 Definitions  
authorized or warranted to be suitable for use in life support, life-critical or  
safety-critical systems or equipment, nor in applications where failure or  
malfunction of an NXP Semiconductors product can reasonably be expected  
to result in personal injury, death or severe property or environmental  
damage. NXP Semiconductors and its suppliers accept no liability for  
inclusion and/or use of NXP Semiconductors products in such equipment or  
applications and therefore such inclusion and/or use is at the customer’s own  
risk.  
Draft — The document is a draft version only. The content is still under  
internal review and subject to formal approval, which may result in  
modifications or additions. NXP Semiconductors does not give any  
representations or warranties as to the accuracy or completeness of  
information included herein and shall have no liability for the consequences of  
use of such information.  
Short data sheet — A short data sheet is an extract from a full data sheet  
with the same product type number(s) and title. A short data sheet is intended  
for quick reference only and should not be relied upon to contain detailed and  
full information. For detailed and full information see the relevant full data  
sheet, which is available on request via the local NXP Semiconductors sales  
office. In case of any inconsistency or conflict with the short data sheet, the  
full data sheet shall prevail.  
Applications — Applications that are described herein for any of these  
products are for illustrative purposes only. NXP Semiconductors makes no  
representation or warranty that such applications will be suitable for the  
specified use without further testing or modification.  
Customers are responsible for the design and operation of their applications  
and products using NXP Semiconductors products, and NXP Semiconductors  
accepts no liability for any assistance with applications or customer product  
design. It is customer’s sole responsibility to determine whether the NXP  
Semiconductors product is suitable and fit for the customer’s applications and  
products planned, as well as for the planned application and use of  
customer’s third party customer(s). Customers should provide appropriate  
design and operating safeguards to minimize the risks associated with their  
applications and products.  
Product specification — The information and data provided in a Product  
data sheet shall define the specification of the product as agreed between  
NXP Semiconductors and its customer, unless NXP Semiconductors and  
customer have explicitly agreed otherwise in writing. In no event however,  
shall an agreement be valid in which the NXP Semiconductors product is  
deemed to offer functions and qualities beyond those described in the  
Product data sheet.  
NXP Semiconductors does not accept any liability related to any default,  
damage, costs or problem which is based on any weakness or default in the  
customer’s applications or products, or the application or use by customer’s  
third party customer(s). Customer is responsible for doing all necessary  
testing for the customer’s applications and products using NXP  
Semiconductors products in order to avoid a default of the applications and  
the products or of the application or use by customer’s third party  
customer(s). NXP does not accept any liability in this respect.  
13.3 Disclaimers  
Limited warranty and liability — Information in this document is believed to  
be accurate and reliable. However, NXP Semiconductors does not give any  
representations or warranties, expressed or implied, as to the accuracy or  
completeness of such information and shall have no liability for the  
consequences of use of such information. NXP Semiconductors takes no  
responsibility for the content in this document if provided by an information  
source outside of NXP Semiconductors.  
Limiting values — Stress above one or more limiting values (as defined in  
the Absolute Maximum Ratings System of IEC 60134) will cause permanent  
damage to the device. Limiting values are stress ratings only and (proper)  
operation of the device at these or any other conditions above those given in  
the Recommended operating conditions section (if present) or the  
Characteristics sections of this document is not warranted. Constant or  
repeated exposure to limiting values will permanently and irreversibly affect  
the quality and reliability of the device.  
In no event shall NXP Semiconductors be liable for any indirect, incidental,  
punitive, special or consequential damages (including - without limitation - lost  
profits, lost savings, business interruption, costs related to the removal or  
replacement of any products or rework charges) whether or not such  
damages are based on tort (including negligence), warranty, breach of  
contract or any other legal theory.  
Terms and conditions of commercial sale — NXP Semiconductors  
products are sold subject to the general terms and conditions of commercial  
sale, as published at http://www.nxp.com/profile/terms, unless otherwise  
agreed in a valid written individual agreement. In case an individual  
agreement is concluded only the terms and conditions of the respective  
agreement shall apply. NXP Semiconductors hereby expressly objects to  
applying the customer’s general terms and conditions with regard to the  
purchase of NXP Semiconductors products by customer.  
Notwithstanding any damages that customer might incur for any reason  
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards  
customer for the products described herein shall be limited in accordance  
with the Terms and conditions of commercial sale of NXP Semiconductors.  
Right to make changes — NXP Semiconductors reserves the right to make  
changes to information published in this document, including without  
limitation specifications and product descriptions, at any time and without  
notice. This document supersedes and replaces all information supplied prior  
to the publication hereof.  
No offer to sell or license — Nothing in this document may be interpreted or  
construed as an offer to sell products that is open for acceptance or the grant,  
conveyance or implication of any license under any copyrights, patents or  
other industrial or intellectual property rights.  
BLS6G2735L-30_6G2735LS-30  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2012. All rights reserved.  
Product data sheet  
Rev. 3 — 24 September 2012  
15 of 17  
BLS6G2735L-30; BLS6G2735LS-30  
NXP Semiconductors  
S-band LDMOS transistor  
Export control — This document as well as the item(s) described herein  
may be subject to export control regulations. Export might require a prior  
authorization from competent authorities.  
NXP Semiconductors’ specifications such use shall be solely at customer’s  
own risk, and (c) customer fully indemnifies NXP Semiconductors for any  
liability, damages or failed product claims resulting from customer design and  
use of the product for automotive applications beyond NXP Semiconductors’  
standard warranty and NXP Semiconductors’ product specifications.  
Non-automotive qualified products — Unless this data sheet expressly  
states that this specific NXP Semiconductors product is automotive qualified,  
the product is not suitable for automotive use. It is neither qualified nor tested  
in accordance with automotive testing or application requirements. NXP  
Semiconductors accepts no liability for inclusion and/or use of  
Translations — A non-English (translated) version of a document is for  
reference only. The English version shall prevail in case of any discrepancy  
between the translated and English versions.  
non-automotive qualified products in automotive equipment or applications.  
In the event that customer uses the product for design-in and use in  
automotive applications to automotive specifications and standards, customer  
(a) shall use the product without NXP Semiconductors’ warranty of the  
product for such automotive applications, use and specifications, and (b)  
whenever customer uses the product for automotive applications beyond  
13.4 Trademarks  
Notice: All referenced brands, product names, service names and trademarks  
are the property of their respective owners.  
14. Contact information  
For more information, please visit: http://www.nxp.com  
For sales office addresses, please send an email to: salesaddresses@nxp.com  
BLS6G2735L-30_6G2735LS-30  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2012. All rights reserved.  
Product data sheet  
Rev. 3 — 24 September 2012  
16 of 17  
BLS6G2735L-30; BLS6G2735LS-30  
NXP Semiconductors  
S-band LDMOS transistor  
15. Contents  
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
General description . . . . . . . . . . . . . . . . . . . . . 1  
Features and benefits. . . . . . . . . . . . . . . . . . . . 1  
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
1.1  
1.2  
1.3  
2
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2  
Ordering information. . . . . . . . . . . . . . . . . . . . . 2  
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2  
Thermal characteristics . . . . . . . . . . . . . . . . . . 3  
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3  
3
4
5
6
7
7.1  
Application information. . . . . . . . . . . . . . . . . . . 4  
Circuit information for application circuit  
(2.7 GHz to 3.5 GHz) . . . . . . . . . . . . . . . . . . . . 4  
Measured in application circuit from 2.7 GHz  
to 3.5 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5  
7.2  
8
Test information. . . . . . . . . . . . . . . . . . . . . . . . . 9  
Ruggedness in class-AB operation . . . . . . . . . 9  
Impedance information. . . . . . . . . . . . . . . . . . . 9  
Circuit information for production test circuit  
8.1  
8.2  
8.3  
(3.1 GHz to 3.5 GHz) . . . . . . . . . . . . . . . . . . . 10  
Measured in RF production test circuit from  
8.4  
3.1 GHz to 3.5 GHz . . . . . . . . . . . . . . . . . . . . 11  
9
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 12  
Handling information. . . . . . . . . . . . . . . . . . . . 14  
Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 14  
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 14  
10  
11  
12  
13  
Legal information. . . . . . . . . . . . . . . . . . . . . . . 15  
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 15  
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 15  
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 15  
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 16  
13.1  
13.2  
13.3  
13.4  
14  
15  
Contact information. . . . . . . . . . . . . . . . . . . . . 16  
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17  
Please be aware that important notices concerning this document and the product(s)  
described herein, have been included in section ‘Legal information’.  
© NXP B.V. 2012.  
All rights reserved.  
For more information, please visit: http://www.nxp.com  
For sales office addresses, please send an email to: salesaddresses@nxp.com  
Date of release: 24 September 2012  
Document identifier: BLS6G2735L-30_6G2735LS-30  

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