934067977115 [NXP]
L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-243AA;
| 型号： | 934067977115 |
| 厂家： | 
NXP |
| 描述： | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-243AA 放大器 晶体管 |
| 文件： | 总19页 (文件大小：254K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ꢁ
BFU590Q
ꢀ
7
2
6
NPN wideband silicon RF transistor
Rev. 1 — 28 April 2014
Product data sheet
1. Product profile
1.1 General description
NPN silicon microwave transistor for high speed, medium power applications in a plastic,
3-pin SOT89 package.
The BFU590Q is part of the BFU5 family of transistors, suitable for small signal to medium
power applications up to 2 GHz.
1.2 Features and benefits
Medium power, high linearity, high breakdown voltage RF transistor
AEC-Q101 qualified
Maximum stable gain 11 dB at 900 MHz
PL(1dB) 22 dBm at 900 MHz
8 GHz fT silicon technology
1.3 Applications
Automotive applications
Broadband amplifiers
Medium power amplifiers (500 mW at a frequency of 433 MHz or 866 MHz)
Large signal amplifiers for ISM applications
1.4 Quick reference data
Table 1.
Quick reference data
Tamb = 25 C unless otherwise specified
Symbol Parameter
Conditions
open emitter
open base
Min Typ Max Unit
VCB
VCE
collector-base voltage
collector-emitter voltage
-
-
24
12
24
2
V
V
V
V
-
-
shorted base
open collector
-
-
VEB
IC
emitter-base voltage
collector current
-
-
-
80
-
200 mA
2000 mW
130
[1]
Ptot
hFE
Cc
total power dissipation
DC current gain
Tsp 90 C
-
IC = 80 mA; VCE = 8 V
VCB = 8 V; f = 1 MHz
IC = 80 mA; VCE = 8 V; f = 900 MHz
60
-
95
2.0
8.0
collector capacitance
transition frequency
-
-
pF
fT
-
GHz
BFU590Q
NXP Semiconductors
NPN wideband silicon RF transistor
Table 1.
Quick reference data …continued
Tamb = 25 C unless otherwise specified
Symbol Parameter
Conditions
Min Typ Max Unit
[2]
Gp(max)
PL(1dB)
maximum power gain
IC = 80 mA; VCE = 8 V; f = 900 MHz
-
-
11
22
-
-
dB
output power at 1 dB gain
compression
IC = 80 mA; VCE = 8 V; ZS = ZL = 50 ;
f = 900 MHz
dBm
[1] Tsp is the temperature at the solder point of the collector lead.
[2] If K > 1 then Gp(max) is the maximum power gain. If K 1 then Gp(max) = MSG.
2. Pinning information
Table 2.
Discrete pinning
Description
emitter
Pin
1
Simplified outline
Graphic symbol
ꢁ
2
collector
ꢀ
3
base
ꢂ
ꢀ
ꢁ
ꢂ
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3. Ordering information
Table 3.
Type number Package
Name Description
Ordering information
Version
SOT89
-
BFU590Q
OM7965
-
-
plastic surface-mounted package; exposed die pad with good heat transfer; 3 leads
Customer evaluation kit for BFU580Q and BFU590Q [1]
[1] The customer evaluation kit contains the following:
a) Unpopulated RF amplifier Printed-Circuit Board (PCB)
b) Unpopulated RF amplifier Printed-Circuit Board (PCB) with emitter degeneration
c) Four SMA connectors for fitting unpopulated Printed-Circuit Board (PCB)
d) BFU580Q and BFU590Q samples
e) USB stick with data sheets, application notes, models, S-parameter and noise files
4. Marking
Table 4.
Marking
Type number
Marking
BFU590Q
S59
BFU590Q
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© NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
Rev. 1 — 28 April 2014
2 of 19
BFU590Q
NXP Semiconductors
NPN wideband silicon RF transistor
5. Design support
Table 5.
Available design support
Download from the BFU590Q product information page on http://www.nxp.com.
Support item
Available
yes
Remarks
Device models for Agilent EEsof EDA ADS
SPICE model
Based on Mextram device model.
yes
Based on Gummel-Poon device
model.
S-parameters
yes
yes
yes
yes
Customer evaluation kit
Solder pattern
See Section 3 and Section 10.
Application notes
See Section 10.1 and Section 10.2.
6. Limiting values
Table 6.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
open emitter
open base
Min Max
Unit
V
VCB
VCE
collector-base voltage
-
-
-
-
-
30
16
30
3
collector-emitter voltage
V
shorted base
open collector
V
VEB
IC
emitter-base voltage
collector current
V
300
mA
Tstg
VESD
storage temperature
electrostatic discharge voltage
65 +150 C
Human Body Model (HBM) According to JEDEC
standard 22-A114E
-
250
V
Charged Device Model (CDM) According to
JEDEC standard 22-C101B
-
2
kV
7. Recommended operating conditions
Table 7.
Symbol
VCB
Characteristics
Parameter
Conditions
open emitter
open base
Min Typ Max
Unit
V
collector-base voltage
collector-emitter voltage
-
-
-
-
-
-
-
-
-
24
VCE
-
12
V
shorted base
open collector
-
24
V
VEB
IC
emitter-base voltage
collector current
-
2
V
-
200
20
mA
dBm
C
mW
Pi
input power
ZS = 50
-
Tj
junction temperature
total power dissipation
40
+150
2000
[1]
Ptot
Tsp 90 C
-
[1] Tsp is the temperature at the solder point of the collector lead.
BFU590Q
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
Rev. 1 — 28 April 2014
3 of 19
BFU590Q
NXP Semiconductors
NPN wideband silicon RF transistor
8. Thermal characteristics
Table 8.
Thermal characteristics
Symbol Parameter
Conditions
Typ Unit
[1]
Rth(j-sp)
thermal resistance from junction to solder point
30
K/W
[1] Tsp is the temperature at the solder point of the collector lead.
Tsp has the following relation to the ambient temperature Tamb
Tsp = Tamb + P Rth(sp-a)
:
With P being the power dissipation and Rth(sp-a) being the thermal resistance between the solder point and
ambient. Rth(sp-a) is determined by the heat transfer properties in the application.
The heat transfer properties are set by the application board materials, the board layout and the
environment e.g. housing.
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Fig 1. Power derating curve
9. Characteristics
Table 9.
Characteristics
Tamb = 25 C unless otherwise specified
Symbol Parameter
Conditions
Min Typ Max Unit
V(BR)CBO collector-base breakdown voltage
V(BR)CEO collector-emitter breakdown voltage
IC = 100 nA; IE = 0 mA
IC = 150 nA; IB = 0 mA
24
12
-
-
-
-
V
V
-
IC
collector current
80
<1
200 mA
ICBO
hFE
Ce
Cre
Cc
collector-base cut-off current
DC current gain
IE = 0 mA; VCB = 8 V
IC = 80 mA; VCE = 8 V
VEB = 0.5 V; f = 1 MHz
VCE = 8 V; f = 1 MHz
VCB = 8 V; f = 1 MHz
-
-
nA
60 95
130
emitter capacitance
feedback capacitance
collector capacitance
transition frequency
-
-
-
-
3.6
1.3
2
-
-
-
-
pF
pF
pF
fT
IC = 50 mA; VCE = 8 V; f = 900 MHz
8.0
GHz
BFU590Q
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
Rev. 1 — 28 April 2014
4 of 19
BFU590Q
NXP Semiconductors
NPN wideband silicon RF transistor
Table 9.
Characteristics …continued
Tamb = 25 C unless otherwise specified
Symbol Parameter
Conditions
Min Typ Max Unit
[1]
Gp(max)
maximum power gain
f = 433 MHz; VCE = 8 V
IC = 10 mA
-
-
-
17
-
dB
dB
dB
IC = 50 mA
17.5 -
17.5 -
IC = 80 mA
[1]
[1]
f = 900 MHz; VCE = 8 V
IC = 10 mA
-
-
-
11
11
11
-
-
-
dB
dB
dB
IC = 50 mA
IC = 80 mA
f = 1800 MHz; VCE = 8 V
IC = 10 mA
-
-
-
6
-
-
-
dB
dB
dB
IC = 50 mA
6.5
6.5
IC = 80 mA
s212
insertion power gain
f = 433 MHz; VCE = 8 V
IC = 10 mA
-
-
-
14.5 -
dB
dB
dB
IC = 50 mA
16
16
-
-
IC = 80 mA
f = 900 MHz; VCE = 8 V
IC = 10 mA
-
-
-
9
-
-
-
dB
dB
dB
IC = 50 mA
10
10
IC = 80 mA
f = 1800 MHz; VCE = 8 V
IC = 10 mA
-
-
-
3.5
4.5
4.5
-
-
-
dB
dB
dB
IC = 50 mA
IC = 80 mA
PL(1dB)
output power at 1 dB gain compression f = 433 MHz; VCE = 8 V; ZS = ZL = 50
IC = 50 mA
-
-
20.5 -
dBm
dBm
IC = 80 mA
23
-
f = 900 MHz; VCE = 8 V; ZS = ZL = 50
IC = 50 mA
-
-
20
22
-
-
dBm
dBm
IC = 80 mA
f = 1800 MHz; VCE = 8 V; ZS = ZL = 50
IC = 50 mA
IC = 80 mA
-
-
19.5 -
22
dBm
dBm
-
BFU590Q
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
Rev. 1 — 28 April 2014
5 of 19
BFU590Q
NXP Semiconductors
NPN wideband silicon RF transistor
Table 9.
Characteristics …continued
Tamb = 25 C unless otherwise specified
Symbol Parameter
Conditions
Min Typ Max Unit
IP3o
output third-order intercept point
f1 = 433 MHz; f2 = 434 MHz; VCE = 8 V;
ZS = ZL = 50
IC = 50 mA
IC = 80 mA
-
-
30
-
dBm
dBm
32.5 -
f1 = 900 MHz; f2 = 901 MHz; VCE = 8 V;
ZS = ZL = 50
IC = 50 mA
IC = 80 mA
-
-
29.5 -
31.5 -
dBm
dBm
f1 = 1800 MHz; f2 = 1801 MHz;
VCE = 8 V; ZS = ZL = 50
IC = 50 mA
IC = 80 mA
-
-
29
-
dBm
dBm
31.5 -
[1] If K > 1 then Gp(max) is the maximum power gain. If K 1 then Gp(max) = MSG.
9.1 Graphs
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Tamb = 25 C.
(1) IB = 25 A
(2)
IB = 75 A
(3) IB = 125 A
(4) IB = 175 A
(5)
IB = 225 A
(6) IB = 275 A
(7) IB = 325 A
Fig 2. Collector current as a function of collector-emitter voltage; typical values
BFU590Q
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
Rev. 1 — 28 April 2014
6 of 19
BFU590Q
NXP Semiconductors
NPN wideband silicon RF transistor
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Tamb = 25 C.
VCE = 8 V.
(1) VCE = 3.0 V
(2) VCE = 8.0 V
(1) Tamb = 40 C
(2) Tamb = +25 C
(3)
Tamb = +125 C
Fig 3. DC current gain as a function of collector
current; typical values
Fig 4. DC current gain as a function of collector
current; typical values
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Tamb = 25 C.
(1) VCE = 3.0 V
(2) CE = 8.0 V
T
amb = 25 C.
(1) VCE = 3.0 V
(2) CE = 8.0 V
V
V
Fig 5. Collector current as a function of base-emitter
voltage; typical values
Fig 6. Base current as a function of base-emitter
voltage; typical values
BFU590Q
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
Rev. 1 — 28 April 2014
7 of 19
BFU590Q
NXP Semiconductors
NPN wideband silicon RF transistor
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VCE = 3 V.
IC = 0 mA; f = 1 MHz; Tamb = 25 C.
(1) Tamb = 40 C
(2) Tamb = +25 C
(3)
Tamb = +125 C
Fig 7. Reverse base current as a function of
emitter-base voltage; typical values
Fig 8. Collector capacitance as a function of
collector-base voltage; typical values
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Tamb = 25 C.
(1) VCE = 3.3 V
(2)
VCE = 5.0 V
(3) VCE = 8.0 V
(4) VCE = 12.0 V
Fig 9. Transition frequency as a function of collector current; typical values
BFU590Q
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
Rev. 1 — 28 April 2014
8 of 19
BFU590Q
NXP Semiconductors
NPN wideband silicon RF transistor
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IC = 50 mA; VCE = 8 V; Tamb = 25 C.
IC = 80 mA; VCE = 8 V; Tamb = 25 C.
Fig 10. Gain as a function of frequency; typical values Fig 11. Gain as a function of frequency; typical values
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VCE = 8 V; Tamb = 25 C.
VCE = 8 V; Tamb = 25 C.
(1) f = 300 MHz
(2) f = 433 MHz
(3) f = 800 MHz
(4) f = 900 MHz
(5) f = 1800 MHz
If K >1 then Gp(max) = maximum power gain. If K < 1 then
Gp(max) = MSG.
(1) f = 300 MHz
(2) f = 433 MHz
(3) f = 800 MHz
(4) f = 900 MHz
(5) f = 1800 MHz
Fig 12. Insertion power gain as a function of collector
current; typical values
Fig 13. Maximum power gain as a function of collector
current; typical values
BFU590Q
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
Rev. 1 — 28 April 2014
9 of 19
BFU590Q
NXP Semiconductors
NPN wideband silicon RF transistor
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IC = 50 mA; Tamb = 25 C.
IC = 80 mA; Tamb = 25 C.
(1) f = 300 MHz
(2) f = 433 MHz
(3) f = 800 MHz
(4) f = 900 MHz
(5) f = 1800 MHz
If K >1 then Gp(max) = maximum power gain. If K < 1 then
Gp(max) = MSG.
(1) f = 300 MHz
(2) f = 433 MHz
(3) f = 800 MHz
(4) f = 900 MHz
(5) f = 1800 MHz
Fig 14. Insertion power gain as a function of
collector-emitter voltage; typical values
Fig 15. Maximum power gain as a function of
collector-emitter voltage; typical values
BFU590Q
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© NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
Rev. 1 — 28 April 2014
10 of 19
BFU590Q
NXP Semiconductors
NPN wideband silicon RF transistor
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VCE = 8 V; 40 MHz f 3 GHz.
(1) IC = 50 mA
(2) IC = 80 mA
Fig 17. Output reflection coefficient (s22); typical values
BFU590Q
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© NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
Rev. 1 — 28 April 2014
11 of 19
BFU590Q
NXP Semiconductors
NPN wideband silicon RF transistor
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VCE = 8 V; Tamb = 25 C.
VCE = 8 V; Tamb = 25 C.
(1) f1 = 433 MHz; f2 = 434 MHz
(2) f1 = 900 MHz; f2 = 901 MHz
(1) f = 433 MHz
(2) f = 900 MHz
(3) f = 1800 MHz
(3) f1 = 1800 MHz; f2 = 1801 MHz
Fig 18. Output third-order intercept point as a function
of collector current; typical values
Fig 19. Output power at 1 dB gain compression as a
function of collector current; typical values
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IC = 80 mA; Tamb = 25 C.
IC = 80 mA; Tamb = 25 C.
(1) f1 = 433 MHz; f2 = 434 MHz
(2) f1 = 900 MHz; f2 = 901 MHz
(3) f1 = 1800 MHz; f2 = 1801 MHz
(1) f = 433 MHz
(2) f = 900 MHz
(3) f = 1800 MHz
Fig 20. Output third-order intercept point as a function
of collector-emitter voltage; typical values
Fig 21. Output power at 1 dB gain compression as a
function of collector-emitter voltage;
typical values
BFU590Q
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© NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
Rev. 1 — 28 April 2014
12 of 19
BFU590Q
NXP Semiconductors
NPN wideband silicon RF transistor
10. Application information
More information about the following application example can be found in the application
notes. See Section 5 “Design support”.
The following application example can be implemented using the evaluation kit. See
Section 3 “Ordering information” for the order type number.
The following application example can be simulated using the simulation package. See
Section 5 “Design support”.
10.1 Application example: 433 MHz PA
More detailed information of the application example can be found in the application note:
AN11504.
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Fig 22. Schematic 433 MHz power amplifier
Remark: fine tuning of components maybe required depending on PCB parasitics.
Table 10. Application performance data at 433 MHz
ICC = 100 mA; VCC = 8 V
Symbol Parameter
Conditions
Min Typ Max Unit
s212
s112
PL(1dB)
C
insertion power gain
-
-
-
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7
26
60
-
-
-
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input return loss
dB
output power at 1 dB gain compression
collector efficiency
dBm
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BFU590Q
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© NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
Rev. 1 — 28 April 2014
13 of 19
BFU590Q
NXP Semiconductors
NPN wideband silicon RF transistor
10.2 Application example: 866 MHz PA
More detailed information of the application example can be found in the application note:
AN11502.
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Fig 23. Schematic 866 MHz power amplifier
Remark: fine tuning of components maybe required depending on PCB parasitics.
Table 11. Application performance data at 866 MHz
ICC = 100 mA; VCC = 8 V
Symbol Parameter
Conditions
Min Typ Max Unit
s212
s112
PL(1dB)
C
insertion power gain
-
-
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dB
input return loss
12
27
dB
output power at 1 dB gain compression
collector efficiency
dBm
%
55
BFU590Q
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© NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
Rev. 1 — 28 April 2014
14 of 19
BFU590Q
NXP Semiconductors
NPN wideband silicon RF transistor
11. Package outline
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BFU590Q
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© NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
Rev. 1 — 28 April 2014
15 of 19
BFU590Q
NXP Semiconductors
NPN wideband silicon RF transistor
12. Handling information
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling
electrostatic sensitive devices.
Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or
equivalent standards.
13. Abbreviations
Table 12. Abbreviations
Acronym
AEC
ISM
Description
Automotive Electronics Council
Industrial, Scientific and Medical
Low-Noise Amplifier
LNA
MSG
NPN
PA
Maximum Stable Gain
Negative-Positive-Negative
Power Amplifier
SMA
SubMiniature version A
14. Revision history
Table 13. Revision history
Document ID
Release date
20140428
Data sheet status
Change notice
Supersedes
BFU590Q v.1
Product data sheet
-
-
BFU590Q
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© NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
Rev. 1 — 28 April 2014
16 of 19
BFU590Q
NXP Semiconductors
NPN wideband silicon RF transistor
15. Legal information
15.1 Data sheet status
Document status[1][2]
Product status[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
Suitability for use in automotive applications — This NXP
15.2 Definitions
Semiconductors product has been qualified for use in automotive
applications. Unless otherwise agreed in writing, the product is not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors and its suppliers accept no liability for
inclusion and/or use of NXP Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at the customer's own
risk.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of their applications
and products using NXP Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the customer’s applications and
products planned, as well as for the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
15.3 Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information. NXP Semiconductors takes no
responsibility for the content in this document if provided by an information
source outside of NXP Semiconductors.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
BFU590Q
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
Rev. 1 — 28 April 2014
17 of 19
BFU590Q
NXP Semiconductors
NPN wideband silicon RF transistor
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
15.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
16. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
BFU590Q
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
Rev. 1 — 28 April 2014
18 of 19
BFU590Q
NXP Semiconductors
NPN wideband silicon RF transistor
17. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1
1.2
1.3
1.4
General description . . . . . . . . . . . . . . . . . . . . . 1
Features and benefits. . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data . . . . . . . . . . . . . . . . . . . . 1
2
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
Ordering information. . . . . . . . . . . . . . . . . . . . . 2
Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Design support . . . . . . . . . . . . . . . . . . . . . . . . . 3
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
Recommended operating conditions. . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . 4
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 4
Graphs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3
4
5
6
7
8
9
9.1
10
10.1
10.2
Application information. . . . . . . . . . . . . . . . . . 13
Application example: 433 MHz PA . . . . . . . . . 13
Application example: 866 MHz PA . . . . . . . . . 14
11
12
13
14
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 15
Handling information. . . . . . . . . . . . . . . . . . . . 16
Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 16
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 16
15
Legal information. . . . . . . . . . . . . . . . . . . . . . . 17
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 17
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 18
15.1
15.2
15.3
15.4
16
17
Contact information. . . . . . . . . . . . . . . . . . . . . 18
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP Semiconductors N.V. 2014.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 28 April 2014
Document identifier: BFU590Q
相关型号：
93407-0214
Board Connector, 14 Contact(s), 1 Row(s), Male, Straight, 0.05 inch Pitch, Surface Mount Terminal, Latch, Black Insulator
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