935056440602 [NXP]
RF/Microwave Amplifier, RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER, SOT109-1, MS-012AC, SO-16;型号: | 935056440602 |
厂家: | NXP |
描述: | RF/Microwave Amplifier, RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER, SOT109-1, MS-012AC, SO-16 放大器 射频 微波 功率放大器 |
文件: | 总21页 (文件大小:243K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
INTEGRATED CIRCUITS
SA5219
Wideband variable gain amplifier
Product specification
Replaces data of 1993 Dec 10
1997 Nov 07
IC17 Data Handbook
Philip s Se m ic ond uc tors
Philips Semiconductors
Product specification
Wideband variable gain amplifier
SA5219
DESCRIPTION
PIN CONFIGURATION
The SA5219 represents a breakthrough in monolithic amplifier
design featuring several innovations. This unique design has
combined the advantages of a high speed bipolar process with the
proven Gilbert architecture.
N, D PACKAGES
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
V
V
CC1
CC2
GND
GND
2
The SA5219 is a linear broadband RF amplifier whose gain is
controlled by a single DC voltage. The amplifier runs off a single 5
volt supply and consumes only 40mA. The amplifier has high
impedance (1kΩ) differential inputs. The output is 50Ω differential.
Therefore, the 5219 can simultaneously perform AGC, impedance
transformation, and the balun functions.
1
IN
OUT
A
A
GND
OUT
GND
IN
2
1
B
B
GND
GND
2
1
V
GND
GND
BG
2
2
The dynamic range is excellent over a wide range of gain setting.
Furthermore, the noise performance degrades at a comparatively
slow rate as the gain is reduced. This is an important feature when
building linear AGC systems.
V
AGC
SR00273
Figure 1. Pin Configuration
FEATURES
• 700MHz bandwidth
APPLICATIONS
• High impedance differential input
• 50Ω differential output
• Linear AGC systems
• Very linear AM modulator
• RF balun
• Single 5V power supply
• 0 - 1V gain control pin
• Cable TV multi-purpose amplifier
• Fiber optic AGC
• >60dB gain control range at 200MHz
• 26dB maximum gain differential
• RADAR
• Exceptional V
/ V
linearity
GAIN
CONTROL
• User programmable fixed gain block
• Video
• 7dB noise figure minimum
• Full ESD protection
• Easily cascadable
• Satellite receivers
• Cellular communications
ORDERING INFORMATION
Description
Temperature Range
-40 to +85°C
Order Code
DWG #
SOT109-1
SOT38-4
16-Pin Plastic Small Outline (SO) package
16-Pin Plastic Dual In-Line package (DIP)
SA5219D
SA5219N
-40 to +85°C
2
1997 Nov 07
853-1724 18663
Philips Semiconductors
Product specification
Wideband variable gain amplifier
SA5219
ABSOLUTE MAXIMUM RATINGS
SYMBOL
PARAMETER
RATING
UNITS
V
CC
Supply voltage
-0.5 to +8.0
V
o
1
Power dissipation, T = 25 C (still air)
A
16-Pin Plastic DIP
16-Pin Plastic SO
P
D
1450
1100
mW
mW
°C
°C
T
Maximum operating junction temperature
Storage temperature range
150
JMAX
T
-65 to +150
STG
NOTES:
1. Maximum dissipation is determined by the operating ambient temperature and the thermal resistance, θ
:
JA
16-Pin DIP: θ = 85°C/W
JA
16-Pin SO: θ = 110°C/W
JA
RECOMMENDED OPERATING CONDITIONS
SYMBOL
PARAMETER
RATING
UNITS
V
CC
Supply voltage
V
CC1
= V
= 4.5 to 7.0V
V
CC2
Operating ambient temperature range
SA Grade
T
A
°C
°C
-40 to +85
-40 to +105
Operating junction temperature range
SA Grade
T
J
DC ELECTRICAL CHARACTERISTICS
o
T = 25 C, V
= V
= +5V, V
= 1.0V, unless otherwise specified.
A
CC1
CC2
AGC
LIMITS
SYMBOL
PARAMETER
TEST CONDITIONS
UNIT
MAX
MIN
TYP
I
Supply current
DC tested
36
16
22
0.8
43
19
25
1.2
50
22
28
1.6
mA
dB
dB
kΩ
CC
A
Voltage gain (single-ended in/single-ended out)
Voltage gain (single-ended in/differential out)
Input resistance (single-ended)
DC tested, R = 10kΩ
L
V
A
DC tested, R = 10kΩ
V
L
R
DC tested at ±50µA
DC tested at ±1mA
IN
R
Output resistance (single-ended)
Output offset voltage (output referred)
DC level on inputs
35
60
+20
2.0
2.4
45
80
±150
2.4
Ω
mV
V
OUT
V
OS
V
1.6
1.9
18
IN
V
OUT
DC level on outputs
2.9
V
PSRR
Output offset supply rejection ratio
dB
4.5V<V <7V
CC
V
R
Bandgap reference voltage
1.2
2
1.32
1.45
-6
V
BG
R
= 10kΩ
BG
Bandgap loading
10
kΩ
V
BG
V
AGC
AGC DC control voltage range
AGC pin DC bias current
0-1.3
-0.7
I
0V<V
<1.3V
µA
BAGC
AGC
3
1997 Nov 07
Philips Semiconductors
Product specification
Wideband variable gain amplifier
SA5219
AC ELECTRICAL CHARACTERISTICS
o
T = 25 C, V
= V
= +5.0V, V
= 1.0V, unless otherwise specified.
A
CC1
CC2
AGC
LIMITS
TYP
SYMBOL
PARAMETER
TEST CONDITIONS
UNIT
MAX
MIN
BW
GF
-3dB bandwidth
Gain flatness
700
MHz
dB
DC - 500MHz
+0.4
Maximuminputvoltageswing(single-ended)for
linear operation
V
IMAX
200
mV
P-P
1
R = 50Ω
400
1.9
9.3
2.5
-60
0.3
0.013
2
mV
Maximum output voltage swing (single-ended)
L
P-P
V
OMAX
1
for linear operation
R = 1kΩ
L
V
P-P
NF
Noise figure (unmatched configuration)
Equivalent input noise voltage spectral density
Reverse isolation
R
= 50Ω, f = 50MHz
f = 100MHz
dB
S
V
nV/√Hz
dB
IN-EQ
S12
f = 100MHz
∆G/∆V
Gain supply sensitivity (single-ended)
Gain temperature sensitivity
dB/V
CC
∆G/∆T
R = 50Ω
L
dB/°C
pF
C
Input capacitance (single-ended)
-3dB bandwidth of gain control function
1dB gain compression point at output
IN
BW
20
MHz
dBm
AGC
O-1dB
P
f = 100MHz
-3
f = 100MHz, V
=0.1V
AGC
AGC
AGC
P
1dB gain compression point at input
Third-order intercept point at output
-10
dBm
dBm
I-1dB
f = 100MHz, V
>0.5V
IP3
+13
OUT
f = 100MHz, V
<0.5V
IP3
Third-order intercept point at input
Gain match output A to output B
+5
dBm
dB
IN
∆G
f = 100MHz, V
= 1V
0.1
AB
AGC
NOTE:
1. With R > 1kΩ, overload occurs at input for single-ended gain < 13dB and at output for single-ended gain > 13dB. With R = 50Ω, overload
L
L
occurs at input for single-ended gain < 6dB and at output for single-ended gain > 6dB.
Otherwise, there is an advantage to common mode rejection, a
specification that is not normally important to RF designs. The
source impedance can be chosen for two different performance
characteristics: Gain, or noise performance. Gain optimization will
be realized if the input impedance is matched to about 1kΩ. A 4:1
balun will provide such a broadband match from a 50Ω source.
Noise performance will be optimized if the input impedance is
matched to about 200Ω. A 2:1 balun will provide such a broadband
match from a 50Ω source. The minimum noise figure can then be
expected to be about 7dB. Maximum gain will be about 23dB for a
single-ended output. If the differential output is used and properly
matched, nearly 30dB can be realized. With gain optimization, the
noise figure will degrade to about 8dB. With no matching unit at the
input, a 9dB noise figure can be expected from a 50Ω source. If the
source is terminated, the noise figure will increase to about 15dB.
All these noise figures will occur at maximum gain.
SA5219 APPLICATIONS
The SA5219 is a wideband variable gain amplifier (VGA) circuit
which finds many applications in the RF, IF and video signal
processing areas. This application note describes the operation of
the circuit and several applications of the VGA. The simplified
equivalent schematic of the VGA is shown in Figure 2. Transistors
Q1-Q6 form the wideband Gilbert multiplier input stage which is
biased by current source I1. The top differential pairs are biased
from a buffered and level-shifted signal derived from the V
input
AGC
and the RF input appears at the lower differential pair. The circuit
topology and layout offer low input noise and wide bandwidth. The
second stage is a differential transimpedance stage with current
feedback which maintains the wide bandwidth of the input stage.
The output stage is a pair of emitter followers with 50Ω output
impedance. There is also an on-chip bandgap reference with
buffered output at 1.3V, which can be used to derive the gain control
voltage.
The SA5219 has an excellent noise figure vs gain relationship. With
any VGA circuit, the noise performance will degrade with decreasing
gain. The 5219 has about a 1.2dB noise figure degradation for
each 2dB gain reduction. With the input matched for optimum gain,
the 8dB noise figure at 23dB gain will degrade to about a 20dB
noise figure at 0dB gain.
Both the inputs and outputs should be capacitor coupled or DC
isolated from the signal sources and loads. Furthermore, the two
inputs should be DC isolated from each other and the two outputs
should likewise be DC isolated from each other. The SA5219 was
designed to provide optimum performance from a 5V power source.
However, there is some range around this value (4.5 - 7V) that can
be used.
The SA5219 also displays excellent linearity between voltage gain
and control voltage. Indeed, the relationship is of sufficient linearity
that high fidelity AM modulation is possible using the SA5219. A
The input impedance is about 1kΩ. The main advantage to a
differential input configuration is to provide the balun function.
4
1997 Nov 07
Philips Semiconductors
Product specification
Wideband variable gain amplifier
SA5219
maximum control voltage frequency of about 20MHz permits video
baseband sources for AM.
BAT17 as shown. The diodes are biased by R1 and R2 to V such
that a quiescent current of about 2mA in each leg is achieved. An
SA5230 low voltage op amp is used as an integrator which drives
CC
A stabilized bandgap reference voltage is made available on the
SA5219 (Pin 7). For fixed gain applications this voltage can be
resistor divided, and then fed to the gain control terminal (Pin 8).
Using the bandgap voltage reference for gain control produces very
stable gain characteristics over wide temperature ranges. The gain
setting resistors are not part of the RF signal path, and thus stray
capacitance here is not important.
the V
pin on all three SA5219s. R3 and C3 filter the high
AGC
frequency ripple from the full-wave rectified signal. A voltage
divider is used to generate the reference for the non-inverting input
of the op amp at about 1.7V. Keeping D3 the same type as D1 and
D2 will provide a first order compensation for the change in Schottky
voltage over the operating temperature range and improve the AGC
performance. R6 is a variable resistor for adjustments to the op
amp reference voltage. In low cost and large volume applications
this could be replaced with a fixed resistor, which would result in a
slight loss of the AGC dynamic range. Cascading three SA5219s
will give a dynamic range in excess of 60dB.
The wide bandwidth and excellent gain control linearity make the
SA5219 VGA ideally suited for the automatic gain control (AGC)
function in RF and IF processing in cellular radio base stations,
Direct Broadcast Satellite (DBS) decoders, cable TV systems, fiber
optic receivers for wideband data and video, and other radio
communication applications. A typical AGC configuration using the
SA5219 is shown in Figure 3. Three SA5219s are cascaded with
appropriate AC coupling capacitors. The output of the final stage
drives the full-wave rectifier composed of two UHF Schottky diodes
The SA5219 is a very user-friendly part and will not oscillate in most
applications. However, in an application such as with gains in
excess of 60dB and bandwidth beyond 100MHz, good PC board
layout with proper supply decoupling is strongly recommended.
V
CC
R
3
R
R
2
1
Q
7
A1
Q
8
OUT
OUT
A
B
Q
Q
Q
Q
4
1
2
3
Ω
Ω
50
50
R
4
I
I
3
2
V
AGC
+
–
Q
Q
6
5
0–1V
IN
B
BANDGAP
REFERENCE
V
BG
IN
A
I
1
SR00274
Figure 2. Equivalent Schematic of VGA
AGC
OUTPUT
RF/IF
INPUT
5219
5219
5219
V
CC
R1
R2
R4
C4
L1
L2
D1
D2
BAT 17
C3
–
5230
+
R3
D3
R6
V
CC
R5
BAT 17
SR00275
Figure 3. AGC Configuration Using Cascaded SA5219s
5
1997 Nov 07
Philips Semiconductors
Product specification
Wideband variable gain amplifier
SA5219
0.1µF
10µF
0.1µF
+
V
CC
V
5VDC
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
V
V
CC1
CC2
GND1
GND
2
V
IN
A
OUT
IN
OUT
A
A
0.1µF
0.1µF
0.1µF
50Ω
GND1
GND2
IN
B
OUT
B
OUT
B
0.1µF
GND1
GND2
GND2
GND2
V
BG
V
AGC
SR00276
Figure 4. VGA AC Evaluation Board
+5V
MINI CIRCUITS
2:1 BALUN
OR SIMILAR
50Ω
SOURCE
50Ω
OUTPUT
5219
50Ω
This circuit will exhibit about a 7dB
noise figure with approximately
22dB gain.
1 : 2
V
AGC
+1V
SR00277
Figure 5. Broadband Noise Optimization
+5V
2:1 TURNS RATIO
LC TUNED
TRANSFORMER
50Ω
50Ω
OUTPUT
This circuit will exhibit about a 7dB
noise figure with approximately
22dB gain. Narrowband circuits
have the advantage of greater stabil-
ity, particularly when multiple de-
vices are cascaded.
5219
SOURCE
50Ω
V
AGC
+1V
SR00278
Figure 6. Narrowband Noise Optimization
+5V
MINI CIRCUITS
4:1 BALUN OR
EQUIVALENT
50Ω
50Ω
SOURCE
OUTPUT
This circuit will exhibit about an 8dB
noise figure with 24dB gain.
5219
1 : 4
50Ω
V
AGC
+1V
SR00279
Figure 7. Broadband Gain Optimization
6
1997 Nov 07
Philips Semiconductors
Product specification
Wideband variable gain amplifier
SA5219
+5V
4:1 TURNS RATIO
LC TUNED
TRANSFORMER
50Ω
50Ω
OUTPUT
This circuit will exhibit approximate-
ly an 8dB noise figure and 25dB gain.
5219
SOURCE
50Ω
V
AGC
+1V
SR00280
Figure 8. Narrowband Gain Optimization
+5V
50Ω
50Ω
SOURCE
OUTPUT
50Ω
The noisefigureofthisconfiguration
will be approximately 15dB.
5219
50Ω
V
AGC
+1V
SR00281
Figure 9. Simple Amplifier Configuration
+5V
50Ω
50Ω
SOURCE
OUTPUT
With the 50Ω source left untermi-
5219
nated, the noise figure is 9dB.
50Ω
V
AGC
+1V
SR00282
Figure 10. Unterminated Configuration
+5V
50Ω
50Ω
SOURCE
OUTPUT
5219
Gain = 19dB + 20log
V
10 AGC
50Ω
V
R2
AGC
= ƪ
ƫ
≤ 1V
VBG
where V
AGC
R1 ) R2
V
BG
and is in units of Volts, for V
AGC
R
R
2
1
SR00283
Figure 11. User-Programmable Fixed Gain Block
7
1997 Nov 07
Philips Semiconductors
Product specification
Wideband variable gain amplifier
SA5219
+5V
FULL CARRIER
AM (DSB)
50Ω
RF INPUT
50Ω
OUTPUT
5219
V
SOURCE
50Ω
All harmonic distortion products will be
at least -50dBc over the audio spectrum.
AGC
.5V
+5V
R
9R
MODULATING
SIGNAL
SR00284
Figure 12. AM Modulator
50Ω
CRYSTAL
FILTER
OUTPUT
5219
5219
5219
50Ω
V
V
V
AGC
AGC
AGC
The high input impedance to the NE5219 makes matching
to crystal filters relatively easy. The total delta gain of this
systemwillapproach80dB. IFfrequencieswellintotheUHF
region can be configured with this type of architecture.
GAIN CONTROL
SIGNAL
SR00285
Figure 13. Receiver AGC IF Gain
(+5V, unless otherwise noted)
V
CC
R
S
±
V
R
R
L
S
T
5219
R
L
R
T
±
V
AGC
SR00286
Figure 14. Test Set-up 1 (Used for all Graphs)
8
1997 Nov 07
Philips Semiconductors
Product specification
Wideband variable gain amplifier
SA5219
10
20
19.5
19
V
= 5.5V
= 5.0V
= 4.5V
CC
CC
CC
9
8
7
6
5
4
3
2
1
0
V
V
5.5V
5.0V
4.5V
18.5
18
17.5
17
R
= 0Ω
= ∞
S
L
T = 25°C
R
R
= R = 50Ω
S
L
R
= ∞
t
R
= ∞
16.5
16
t
V
= 1.1V
AGC
f = 10MHz
See Test Setup 1
DC Tested
See test-setup 1
15.5
15
0
0.2
0.4
0.6
V
0.8
(V)
1
1.2
–100
–50
0
50
100
150
Temperature (°C)
AGC
SR00287
SR00289
Figure 15. Gain vs V
and V
Figure 17. Voltage Gain vs Temperature and V
CC
AGC
CC
-55°C
+25°C
10
9
8
7
6
5
4
3
2
1
0
55
50
45
40
35
30
25
20
+125°C
V
= 7.0V
CC
V
= 6.0V
CC
V
= 5.0V
= 4.5V
CC
CC
V
R
= R = 50Ω
L
S
R
= ∞
t
See test-setup 1
See test-setup 1
100
–100
–50
0
50
150
0
0.2
0.4
0.6
(V)
0.8
1
1.2
Temperature (°C)
V
AGC
SR00288
SR00290
Figure 16. Insertion Gain vs V
and Temperature
Figure 18. Supply Current vs Temperature and V
CC
AGC
9
1997 Nov 07
Philips Semiconductors
Product specification
Wideband variable gain amplifier
SA5219
5
4.5
4
1.5
1.45
1.4
V
= 7.0V
= 6.0V
CC
V
CC
3.5
3
1.35
V
= 7.0V
= 4.5V
CC
1.3
1.25
1.2
V
CC
V
= 5.0V
= 4.5V
CC
CC
2.5
2
V
1.5
1
1.15
1.1
DC Tested
See test-setup 1
DC Tested
See test-setup 1
0.5
0
1.05
1
–100
–50
0
50
100
150
–100
–50
0
50
100
150
Temperature (°C)
Temperature (°C)
SR00291
SR00293
Figure 19. Input Resistance vs Temperature
Figure 21. Output Bias Voltage vs Temperature and V
CC
2.5
2
2.5
2
V
= 7.0V
CC
CC
= 5.0V
CC
V
V
V
= 6.0V
1.5
1.5
= 4.5V
CC
V
= 1.1V
AGC
= 10kΩ
1
0.5
0
1
0.5
0
R
L
DC Tested
See test-setup 1
DC Tested
See test-setup 1
–100
–50
0
50
100
150
–100
–50
0
50
100
150
Temperature (°C)
Temperature (°C)
SR00292
SR00294
Figure 20. Input Bias Voltage vs Temperature
Figure 22. DC Output Swing vs Temperature
10
1997 Nov 07
Philips Semiconductors
Product specification
Wideband variable gain amplifier
SA5219
16
14
12
10
8
20
10
1.1V
0.8V
0.4V
V
V
V
V
= 7.0V
= 6.0V
= 5.0V
= 4.5V
CC
CC
CC
CC
200mV
100mV
50mV
0
–10
–20
–30
T = 25°C
= 1.1V
V
6
AGC
= 50Ω
R
t
25mV
f = 10MHz
4
See Test Setup 1
T = 25°C
R
= R =
L
S
2
50Ω
R
= 50Ω
See Test
Setup 1
t
0
–100
10
100
1000 1500
–50
0
50
100
150
Frequency (MHz)
Temperature (°C)
SR00295
SR00297
Figure 23. Insertion Gain vs Frequency and V
Figure 25. Insertion Gain vs Temperature and V
AGC
CC
15
10
0
5.5V
4.5V
–5
–10
5
125°C
–15
T = 25°C
25°C
V
= 1.1V
AGC
= R = 50Ω
0
R
-55°C
S
L
R
= 50Ω
t
–20
See Test Setup 1
R
= R = 50Ω
L
S
R
= 50Ω
t
See Test Setup 1
–5
–25
10
100
Frequency (MHz)
10
1000 1500
100
1000 1500
Frequency (MHz)
SR00298
SR00296
Figure 24. Insertion Gain vs Frequency and V
Figure 26. Output Return Loss vs Frequency
CC
11
1997 Nov 07
Philips Semiconductors
Product specification
Wideband variable gain amplifier
SA5219
0
–10
–20
–30
–40
–50
15
10
5
OUTPUT
T = 25°C
= R = 50Ω
R
S
L
R
= 50Ω
t
f = 100MHz
See test-setup 1
–60
T = 25°C
R
= R = 50Ω
R = 50Ω
t
S
INPUT
L
0
–70
–80
–90
See test-setup 1
–5
0
0.2
0.4
0.6
(V)
0.8
1
Frequency (MHz)
V
AGC
SR00299
SR00301
Figure 27. Reverse Isolation vs Frequency
Figure 29. Third-Order Intermodulation Intercept vs V
AGC
20
18
16
14
12
10
8
0
OUTPUT
–5
–10
–15
–20
–25
–30
INPUT
T = 25°C
R
= R = 50Ω
S
L
T = 25°C
R
= 50Ω
t
6
f = 100MHz
See test-setup 1
R
= R = 50Ω
S
L
R
= ∞
t
4
2
0
f = 50MHz
See test-setup 1
0
0.2
0.4
0.6
(V)
0.8
1
0
0.2
0.4
V
0.6
(V)
AGC
0.8
1
V
AGC
SR00300
SR00302
Figure 28. 1dB Gain Compression vs V
Figure 30. Noise Figure vs V
AGC
AGC
12
1997 Nov 07
Philips Semiconductors
Product specification
Wideband variable gain amplifier
SA5219
12
10
8
16
14
0Ω Termination
12
on INB
10
50Ω Termination
8
6
on INB
6
4
T = 25°C
R
= R = 50Ω
L
t
S
V
= 1.1V
AGC
= R = 50Ω
4
2
0
R = 50Ω
R
S
L
R
= R = 10k
2
1
R = ∞ on INA
t
f = 100MHz
2
See test-setup 1
See Figure 10
0
10
100
1000
–60
–10
40
90
140
Frequency (MHz)
Temperature (°C)
SR00303
SR00305
Figure 31. Noise Figure vs Frequency
Figure 33. Fixed Gain vs Temperature
1.4
V
V
V
V
= 7.0V
CC
CC
CC
CC
1.35
= 6.0V
= 5.0V
= 4.5V
1.3
1.25
1.2
1.15
1.1
Bandgap Load = 2kΩ
1.05
1
–100
–50
0
50
100
150
Temperature (°C)
SR00304
Figure 32. Bandgap Voltage vs Temperature and V
CC
13
1997 Nov 07
Philips Semiconductors
Product specification
Wideband variable gain amplifier
SA5219
+VCC
GND
INA
OUTA
INB
OUTB
NE5219
TOP VIEW - COMPONENT SIDE
TOP VIEW - SOLDER SIDE
SR00306
Figure 34. VGA AC Evaluation Board Layout (DIP Package)
AMP10101 / NE5219SO/DN8.90
BOTTOM VIEW - D Package
TOP VIEW - D Package
SR00307
Figure 35. VGA AC Evaluation Board Layout (SO Package)
14
1997 Nov 07
Philips Semiconductors
Product specification
Wideband variable gain amplifier
SA5219
DIP16: plastic dual in-line package; 16 leads (300 mil)
SOT38-4
15
1997 Nov 07
Philips Semiconductors
Product specification
Wideband variable gain amplifier
SA5219
SO16: plastic small outline package; 16 leads; body width 3.9 mm
SOT109-1
16
1997 Nov 07
Philips Semiconductors
Product specification
Wideband variable gain amplifier
SA5219
NOTES
17
1997 Nov 07
Philips Semiconductors
Product specification
Wideband variable gain amplifier
SA5219
DEFINITIONS
Data Sheet Identification
Product Status
Definition
This data sheet contains the design target or goal specifications for product development. Specifications
may change in any manner without notice.
Objective Specification
Formative or in Design
This data sheet contains preliminary data, and supplementary data will be published at a later date. Philips
Semiconductors reserves the right to make changes at any time without notice in order to improve design
and supply the best possible product.
Preliminary Specification
Product Specification
Preproduction Product
Full Production
This data sheet contains Final Specifications. Philips Semiconductors reserves the right to make changes
at any time without notice, in order to improve design and supply the best possible product.
Philips Semiconductors and Philips Electronics North America Corporation reserve the right to make changes, without notice, in the products,
including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright,
or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified. Applications that are described herein for any of these products are for illustrative purposes
only. PhilipsSemiconductorsmakesnorepresentationorwarrantythatsuchapplicationswillbesuitableforthespecifiedusewithoutfurthertesting
or modification.
LIFE SUPPORT APPLICATIONS
Philips Semiconductors and Philips Electronics North America Corporation Products are not designed for use in life support appliances, devices,
orsystemswheremalfunctionofaPhilipsSemiconductorsandPhilipsElectronicsNorthAmericaCorporationProductcanreasonablybeexpected
to result in a personal injury. Philips Semiconductors and Philips Electronics North America Corporation customers using or selling Philips
Semiconductors and Philips Electronics North America Corporation Products for use in such applications do so at their own risk and agree to fully
indemnify Philips Semiconductors and Philips Electronics North America Corporation for any damages resulting from such improper use or sale.
Philips Semiconductors
811 East Arques Avenue
P.O. Box 3409
Copyright Philips Electronics North America Corporation 1997
All rights reserved. Printed in U.S.A.
Sunnyvale, California 94088–3409
Telephone 800-234-7381
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SA5219; Wideband
variable gain
amplifier
download datasheet
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General description
The SA5219 represents a breakthrough in monolithic amplifier design featuring several innovations. This
unique design has combined the advantages of a high speed bipolar process with the proven Gilbert
architecture.
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The SA5219 is a linear broadband RF amplifier whose gain is controlled by a single DC voltage. The
amplifier runs off a single 5 volt supply and consumes only 40mA. The amplifier has high impedance (1kΩ)
differential inputs. The output is 50Ω differential. Therefore, the 5219 can simultaneously perform AGC,
impedance transformation, and the balun functions.
End of Life
information
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•
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The dynamic range is excellent over a wide range of gain setting. Furthermore, the noise performance
degrades at a comparatively slow rate as the gain is reduced. This is an important feature when building linear
AGC systems.
Models
•
•
SoC solutions
Features
●
●
700MHz bandwidth
High impedance differential input
50Ω differential output
Single 5V power supply
0 - 1V gain control pin
●
●
●
●
●
●
>60dB gain control range at 200MHz
26dB maximum gain differential
Exceptional V
/ V
linearity
CONTROL
GAIN
●
●
●
7dB noise figure minimum
Full ESD protection
Easily cascadable
Applications
●
●
●
●
●
●
●
●
●
●
Linear AGC systems
Very linear AM modulator
RF balun
Cable TV multi-purpose amplifier
Fiber optic AGC
RADAR
User programmable fixed gain block
Video
Satellite receivers
Cellular communications
AN116: Applications For The NE521/522/527/529 (date 01-Dec-88)
AN177: An Overview Of The Phase-Locked Loop (PLL) (date 01-Dec-88)
AN178: Modeling The PLL (date 01-Dec-88)
Datasheet
Type
number
Title
Publication
release date
Datasheet status
Page
count
File
size
(kB)
Datasheet
SA5219
Wideband
variable gain
amplifier
7/11/1997
Product
specification
18
180
Download
Parametrics
Type
Package Application FUNCTION Operating No. Amplifier Vdd(max.) Maximum
number
temp.(Cel) of Type
Pins
Power
Dissipation(Mw)
General-
Wideband
16 variable
gain
SOT109
(SO16)
SA5219D
purpose/Linear Amplifiers -40~85
ICs
5
1100
Products, packages, availability and ordering
Type
North
Ordering code
Marking/Packing Package Device status Buy online
IC packing info
number
American (12NC)
type
number
SOT109
(SO16)
Standard Marking *
Tube (Signetics)
Full production
Full production
SA5219D SA5219D
9350 564 40602
Standard Marking *
9350 564 40623 Reel Pack, SMD,
13" (Signetics)
SOT109
(SO16)
SA5219D-
T
Products in the above table are all in production. Some variants are discontinued; click here for information on
these variants.
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