935166750118 [NXP]
IC SPECIALTY TELECOM CIRCUIT, PDSO20, PLASTIC, SOT-266-1, SSOP-20, Telecom IC:Other;
| 型号： | 935166750118 |
| 厂家： | 
NXP |
| 描述： | IC SPECIALTY TELECOM CIRCUIT, PDSO20, PLASTIC, SOT-266-1, SSOP-20, Telecom IC:Other 电信 光电二极管 电信集成电路 |
| 文件： | 总20页 (文件大小：239K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
RF COMMUNICATIONS PRODUCTS
SA636
Low voltage high performance mixer FM
IF system with high-speed RSSI
Product specification
Replaces data of 1994 Jun 16
1997 Nov 07
IC17 Data Handbook
Philip s Se m ic ond uc tors
Philips Semiconductors
Product specification
Low voltage high performance mixer FM IF
system with high-speed RSSI
SA636
DESCRIPTION
PIN CONFIGURATION
The SA636 is a low-voltage high performance monolithic FM IF
system with high-speed RSSI incorporating a mixer/oscillator, two
limiting intermediate frequency amplifiers, quadrature detector,
logarithmic received signal strength indicator (RSSI), voltage
regulator, wideband data output and fast RSSI op amps. The
SA636 is available in 20-lead SSOP (shrink small outline package).
DK Package
1
2
20
19
18
17
16
15
14
RF
MIXER OUT
IN
IF AMP DECOUPLING
RF BYPASS
XTAL OSC (EMITTER)
XTAL OSC (BASE)
3
The SA636 was designed for high bandwidth portable
IF AMP IN
communication applications and will function down to 2.7V. The RF
section is similar to the famous SA605. The data output has a
minimum bandwidth of 600kHz. This is designed to demodulate
wideband data. The RSSI output is amplified. The RSSI output has
access to the feedback pin. This enables the designer to adjust the
level of the outputs or add filtering.
4
IF AMP DECOUPLING
IF AMP OUT
GND
V
5
CC
RSSI FEEDBACK
6
RSSI
OUT
LIMITER IN
7
POWER DOWN CONTROL
8
13 LIMITER DECOUPLING
SA636 incorporates a power down mode which powers down the
device when Pin 8 is low. Power down logic levels are CMOS and
TTL compatible with high input impedance.
9
12
11
DATA OUT
LIMITER DECOUPLING
LIMITER OUT
QUADRATURE IN
10
APPLICATIONS
• DECT (Digital European Cordless Telephone)
SR00491
Figure 1. Pin Configuration
• Digital cordless telephones
• Digital cellular telephones
• XTAL oscillator effective to 150MHz (L.C. oscillator to 1GHz local
• Portable high performance communications receivers
• Single conversion VHF/UHF receivers
• FSK and ASK data receivers
• Wireless LANs
oscillator can be injected)
• 92dB of IF Amp/Limiter gain
• 25MHz limiter small signal bandwidth
• Temperature compensated logarithmic Received Signal Strength
Indicator (RSSI) with a dynamic range in excess of 90dB
• RSSI output internal op amp
FEATURES
• Internal op amps with rail-to-rail outputs
• Wideband data output (600kHz min.)
• Low external component count; suitable for crystal/ceramic/LC
• Fast RSSI rise and fall times
filters
• Low power consumption: 6.5mA typ at 3V
• Mixer input to >500MHz
• Excellent sensitivity: 0.54µV into 50Ω matching network for 12dB
SINAD (Signal to Noise and Distortion ratio) for 1kHz tone with RF
at 240MHz and IF at 10.7MHz
• Mixer conversion power gain of 11dB at 240MHz
• Mixer noise figure of 12dB at 240MHz
• ESD hardened
• 10.7MHz filter matching (330Ω)
• Power down mode (I = 200µA)
CC
ORDERING INFORMATION
DESCRIPTION
TEMPERATURE RANGE
ORDER CODE
DWG #
SOT266-1
20-Pin Plastic Shrink Small Outline Package (Surface-mount)
-40 to +85°C
SA636DK
2
1997 Nov 07
853-1757 18664
Philips Semiconductors
Product specification
Low voltage high performance mixer FM IF system
with high-speed RSSI
SA636
BLOCK DIAGRAM
20
19
18
17
16
15
14
13
12
11
GND
IF
AMP
LIMITER
MIXER
QUAD
FAST
RSSI
OSCILLATOR
–
+
–
+
PWR
DWN
V
CC
AUDIO
RSSI
E
B
1
2
3
4
5
6
7
8
9
10
SR00492
Figure 2. Block Diagram
ABSOLUTE MAXIMUM RATINGS
SYMBOL
PARAMETER
RATING
UNITS
V
Single supply voltage
0.3 to 7
V
V
CC
V
Voltage applied to any other pin
–0.3 to (V +0.3)
IN
CC
°C
°C
T
Storage temperature range
-65 to +150
–40 to +85
STG
T
Operating ambient temperature range SA636
A
NOTE: θ , Thermal impedance
DK package
117°C/W
JA
DC ELECTRICAL CHARACTERISTICS
V
CC
= +3V, T = 25°C; unless otherwise stated.
A
LIMITS
SA636
TYP
SYMBOL
PARAMETER
TEST CONDITIONS
UNITS
MAX
MIN
2.7
5.5
–10
–10
0
V
CC
Power supply voltage range
DC current drain
3.0
5.5
7.5
10
V
I
Pin 8 = HIGH
Pin 8 LOW
6.5
mA
CC
Input current
Input level
µA
Pin 8 HIGH
10
Pin 8 LOW
0.3V
CC
V
Pin 8 HIGH
0.7V
V
CC
CC
I
Standby
Pin 8 = LOW
0.2
10
5
0.5
mA
µs
CC
ON
t
Power up time
Power down time
RSSI valid (10% to 90%)
RSSI invalid (90% to 10%)
t
µs
OFF
3
1997 Nov 07
Philips Semiconductors
Product specification
Low voltage high performance mixer FM IF system
with high-speed RSSI
SA636
AC ELECTRICAL CHARACTERISTICS
T = 25°C; V = +3V, unless otherwise stated. RF frequency = 240.05MHz + 14.5dBV RF input step-up; IF frequency = 10.7MHz; RF level =
A
CC
-45dBm; FM modulation = 1kHz with ±125kHz peak deviation. Audio output with C-message weighted filter and de-emphasis capacitor. Test
circuit Figure 1. The parameters listed below are tested using automatic test equipment to assure consistent electrical characteristics. The
limits do not represent the ultimate performance limits of the device. Use of an optimized RF layout will improve many of the listed parameters.
LIMITS
SYMBOL
PARAMETER
TEST CONDITIONS
SA636
TYP
UNITS
MIN
MAX
Mixer/Osc section (ext LO = 160mV
)
RMS
f
Input signal frequency
External oscillator (buffer)
Noise figure at 240MHz
500
500
12
MHz
MHz
dB
IN
f
OSC
Third-order input intercept point
Conversion power gain
RF input resistance
Matched f1=240.05; f2=240.35MHz
Matched 14.5dBV step-up
Single-ended input
-16
11
dBm
dB
8
14
700
3.5
330
Ω
RF input capacitance
pF
Mixer output resistance
(Pin 20)
Ω
IF section
IF amp gain
330Ω load
330Ω load
38
54
dB
dB
Limiter gain
Input limiting -3dB
AM rejection
Test at Pin 18
80% AM 1kHz
–105
50
dBm
dB
Data level
R
= 100kΩ
120
600
130
700
16
mV
RMS
LOAD
3dB data bandwidth
SINAD sensitivity
Total harmonic distortion
Signal-to-noise ratio
kHz
RF level = -111dBm
dB
dB
dB
V
THD
S/N
-43
60
-38
No modulation for noise
IF level = -118dBm
IF level = -68dBm
0.2
0.6
1.3
0.5
1.0
1.8
IF RSSI output with buffer
0.3
0.9
V
IF level = -10dBm
V
IF RSSI output rise time
(10kHz pulse, no 10.7MHz filter)
(no RSSI bypass capacitor)
IF RSSI output fall time
(10kHz pulse, no 10.7MHz filter)
(no RSSI bypass capacitor)
RSSI range
IF frequency = 10.7MHz
RF level = -56dBm
RF level = -28dBm
IF frequency = 10.7MHz
RF level = -56dBm
RF level = -28dBm
1.2
1.1
µs
µs
2.0
7.3
µs
µs
dB
dB
Ω
90
RSSI accuracy
+1.5
330
330
330
300
130
IF input impedance
IF output impedance
Ω
Limiter input impedance
Limiter output impedance
Limiter output level with no load
Ω
Ω
mV
RMS
RF/IF section (int LO)
System RSSI output
System SINAD
RF level = -10dBm
1.4
12
V
RF level = -106dBm
dB
4
1997 Nov 07
Philips Semiconductors
Product specification
Low voltage high performance mixer FM IF system
with high-speed RSSI
SA636
PERFORMANCE CHARACTERISTICS
9.0
8.5
8.0
7.5
7.0
6.5
6.0
5.5
5.0
0.50
0.45
0.40
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0.00
V
= 5V
CC
V
V
= 5V
= 3V
CC
CC
V
V
= 3V
CC
CC
= 2.7V
V
= 2.7V
CC
–50 –40 –30 –20 –10
0
10 20 30 40 50 60 70 80 90
–50–40 –30 –20 –10
0
10 20 30 40 50 60 70 80 90 100
TEMPERATURE (°C)
TEMPERATURE (°C)
Supply Current vs Temperature and Supply Voltage
Power Down Supply Current vs Temperature and Supply Voltage
–5
20
RF level = -45 dBm
19
–7
18
17
16
15
RF level = -45 dBm
–9
–11
5.5V
–13
14
5.5V
13
2.7V
–15
–17
–19
–21
–23
–25
3.0V
12
3.0V
11
10
2.7V
9
8
7
6
5
–40
0
25
70
85
–40
0
25
Temperature (°C)
70
85
Temperature (°C)
Mixer Power Gain vs Temperature and Supply Voltage
Mixer IIP3 at 240MHz vs Temperature and Supply Voltage
20
300
AUDIO
0
250
5.5V
–20
AM REJECTION
200
–40
3.0V
DISTORTION
150
2.7V
–60
NOISE
–80
100
50
0
–100
–120
12dB SINAD
–50 –40 –30 –20 –10
0
10 20 30 40 50 60 70 80 90
–40
0
25
70
85
TEMPERATURE (°C)
Temperature (°C)
12dB SINAD and Relative Audio, THD, Noise
and AM Rejection for VCC = 3V vs Temperature
RF = 240MHz, Level = –68dBm, Deviation = 125kHz
Audio Reference Level vs Temperature and Supply Voltage
SR00493
Figure 3. Performance Characteristics
5
1997 Nov 07
Philips Semiconductors
Product specification
Low voltage high performance mixer FM IF system
with high-speed RSSI
SA636
PERFORMANCE CHARACTERISTICS (continued)
10
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
10
0
2
AUDIO
0
–10
–20
–30
–40
–50
–60
–70
–80
–90
1.8
1.6
1.4
1.3
1.0
0.8
0.6
0.4
0.2
0
AUDIO
–10
–20
–30
–40
–50
–60
–70
–80
–90
AM REJECTION
AM REJECTION
RSSI
THD+N
THD+N
NOISE
NOISE
RSSI
RF INPUT LEVEL (dBm)
RF INPUT LEVEL (dBm)
Receiver RF Performance — T = 25°C,
Audio Level = 129mV
Receiver RF Performance — T = –40°C,
Audio Level = 118mV
RMS
RMS
10
0
2
0
–10
–20
–30
–40
–50
–60
–70
–80
–90
–100
–110
AUDIO
1.8
1.6
1.4
1.2
1
–10
–20
–30
–40
–50
–60
–70
–80
–90
AM REJECTION
RSSI
THD+N
NOISE
0.8
0.6
0.4
0.2
0
RF INPUT POWER (dBm)
Mixer Third Order Intercept and Compression
Receiver RF Performance – T = 85°C, Audio Level = 131mV
RMS
85
2
–40°C
–5
–7
RF level = -45 dBm
1.8
1.6
1.4
1.2
1
25°C
85°C
–9
–11
–13
–15
–17
–19
–21
–23
–25
5.5V
2.7V
3.0V
0.8
0.6
0.4
0.2
0
–40
0
25
70
RF INPUT LEVEL (dBm)
Temperature (°C)
RSSI vs RF Input Level and Temperature
Mixer IIP3 at 240MHz vs Temperature and Supply Voltage
SR00494
Figure 4. Performance Characteristics
6
1997 Nov 07
Philips Semiconductors
Product specification
Low voltage high performance mixer FM IF system
with high-speed RSSI
SA636
PERFORMANCE CHARACTERISTICS (continued)
65.00
63.00
61.00
59.00
57.00
55.00
53.00
51.00
49.00
47.00
45.00
50.00
48.00
46.00
44.00
42.00
40.00
38.00
36.00
34.00
32.00
30.00
V
V
= 5V
= 3V
CC
V
V
= 5V
= 3V
CC
CC
CC
V
= 2.7V
CC
V
= 2.7V
CC
TEMPERATURE (°C)
TEMPERATURE (°C)
SA626 Limiting Amplifier Gain vs Temperature vs Supply Voltage
SA626 IF Amplifier Gain vs Temperature vs Supply Voltage
0.8
0.8
600kHz Data Rate,
0.7
0.7
IF = 9.85MHz,
Dev = 288kHz,
RF = -40dBm
5.5V
0.6
0.6
0.5
0.5
3.0V
5.5V
3.0V
0.4
0.4
0.3
0.2
2.7V
0.3
2.7V
0.2
1kHz Data Rate,
IF = 9.85MHz,
Dev = 288kHz,
0.1
0.1
0
RF = -40dBm
0
–40
0
25
70
85
–40
0
25
70
85
Temperature (°C)
Temperature (°C)
Data Level vs Temperature and Supply Voltage
Data Level vs Temperature and Supply Voltage
SR00495
Figure 5. Performance Characteristics
7
1997 Nov 07
Philips Semiconductors
Product specification
Low voltage high performance mixer FM IF system
with high-speed RSSI
SA636
PERFORMANCE CHARACTERISTICS (continued)
300
0.8
0.7
600kHz Data Rate,
IF = 9.85MHz,
Dev = 288kHz,
RF = -40dBm
250
5.5V
0.6
200
0.5
0.4
0.3
0.2
0.1
0
3.0V
5.5V
3.0V
150
100
50
2.7V
2.7V
0
–40
0
25
70
85
–40
0
25
70
85
Temperature (°C)
Temperature (°C)
Audio Reference Level vs Temperature and Supply Voltage
Data Level vs Temperature and Supply Voltage
0.8
1kHz Data Rate,
IF = 9.85MHz,
Dev = 288kHz,
RF = -40dBm
0.7
5.5V
0.6
0.5
0.4
0.3
0.2
0.1
0
3.0V
2.7V
–40
0
25
70
85
Temperature (°C)
Data Level vs Temperature and Supply Voltage
SR00496
Figure 6. Performance Characteristics
8
1997 Nov 07
Philips Semiconductors
Product specification
Low voltage high performance mixer FM IF system
with high-speed RSSI
SA636
PIN FUNCTIONS
PIN
PIN
PIN
PIN
DC V
EQUIVALENT CIRCUIT
DC V
EQUIVALENT CIRCUIT
No. MNEMONIC
No. MNEMONIC
V
CC
RSSI
—
+
1
RF IN
+1.07
6
+0.20
6
FEEDBACK
0.8k
0.8k
2
1
V
CC
RF
RSSI
+
2
+1.07
7
+0.20
7
BYPASS
OUT
—
R
R
XTAL
OSC
POWER
18k
8
3
+1.57
8
+2.75
DOWN
4
MIX
V
CC
3
150µA
XTAL
OSC
DATA
4
+2.32
9
+1.09
OUT
+
9
—
80k
V
REF
5
10
QUAD.
5
V
CC
+3.00
10
+3.00
IN
BANDGAP
20µA
SR00497
Figure 7. Pin Functions
9
1997 Nov 07
Philips Semiconductors
Product specification
Low voltage high performance mixer FM IF system
with high-speed RSSI
SA636
PIN FUNCTIONS (continued)
PIN
PIN
PIN
PIN
DC V
EQUIVALENT CIRCUIT
DC V
EQUIVALENT CIRCUIT
No. MNEMONIC
No. MNEMONIC
LIMITER
IF
11
+1.35
16
+1.22
140Ω
OUT
AMP OUT
11
16
8.8k
8.8k
LIMITER
IF AMP
12
+1.23
17
+1.22
DECOUP
DECOUP
14
18
LIMITER
IF
330Ω
330Ω
13
+1.23
18
+1.22
COUPLING
AMP IN
50µA
50µA
12
17
13
19
LIMITER
IF AMP
14
+1.23
19
+1.22
IN
DECOUP
110Ω
MIXER
20
15
GND
0
20
+1.03
OUT
400µA
SR00498
Figure 8. Pin Functions (cont.)
10
1997 Nov 07
Philips Semiconductors
Product specification
Low voltage high performance mixer FM IF system
with high-speed RSSI
SA636
MIXER
IF/LIM OUT
IF/LIM IN
R9
R4
R3
R11
R6
R2
C12
C11
R7
C16
R5
R8
C20
R10
C17
C14
FLT1
FLT2
L5
2
1
1
2
2
1
1
2
SW5
C19
C15
C18
C13
20
19
18
17
16
15
14
13
12
11
IF
AMP
LIMITER
MIXER
C21
QUAD
RSSI
OSCILLATOR
+
+
–
–
V
CC
PWR
DWN
DATA
1
2
3
4
5
6
7
8
9
10
C1
C2
C3
C4
C5
C6
C8
R1
*L1
FLT
3
L3
L4
C9
C7
*L2
FLT
4
PWR
DWN
CTRL
C10
DATA
OUT
RSSI
OUT
V
CC
RF IN
LO IN
Automatic Test Circuit Component List
R1
C1
L1
8.2kΩ select
0.1µF
150nH select for input match
C12
C13
C14
C15
C16
C17
C18
160pF select
1000pF
0.1µF
1000pF
0.1µF
0.1µF
1000pF
R2
R3
R4
R5
R6
R7
R8
R9
C2
C3
C4
C5
C6
*C7
C8
C9
L2
L3
L4
L5
6.42kΩ
347.8Ω
49.9Ω
1kΩ
1–5pF select for input match
0.1µF
0.1µF
1–5pF select for input match
100pF
6.8µF 10V
1µF
39pF select
22nH select for input match
47nH select for input match
5.6µH select for input match
1.27–2.25µH select for mixer
output match
49.9Ω
6.42kΩ
347.8Ω
49.9Ω
1kΩ
49.9Ω
FLT1
10.7MHz (Murata SFE10.7MA5-A)
C19
C20
C21
1000pF
0.1µF
1pF
FLT2
FLT3
FLT4
10.7MHz (Murata SFE10.7MA5-A)
“C” message weighted
Active de-emphasis
R10
R11
C10
C11
0.1µF
0.1µF
*NOTE: This value can be reduced when a battery is the power source.
SR00501
Figure 9. SA636 240.05MHz (RF) / 10.7MHz (IF) Test Circuit
11
1997 Nov 07
Philips Semiconductors
Product specification
Low voltage high performance mixer FM IF system
with high-speed RSSI
SA636
C1
5–30pF
L4
680nH
SMA
RF IN
J1
110.592MHz
+/–288kHz
L1
180nH
C20
68pF
C21
330pF
U1
C19
1nF
C18
68pF
1
20
19
18
17
16
15
14
RF IN
MIXER OUT
IF AMP
C2
10nF
2
RF BYPASS
DECOUPLING 1
XTAL
OSC (EMITTER)
3
4
5
6
7
IF IN
SMA
LO IN
C4
1nF
C3
1nF
120.392MHz
@–10dBm
C17
1nF
XTAL
OSC (BASE)
IF AMP
DECOUPLING 2
J2
R1
51
IF OUT
V
CC
C16
100pF
RSSI FEEDBACK
RSSI OUT
GROUND
LIMITER IN
R3
22k
C13
100pF
R4
33k
8
9
13
12
PD CTRL
LIMITER DEC1
LIMITER DEC2
LIMITER OUT
R2
10
+3V
DATA OUT
V
CC
C11
1nF
C12
1nF
+
C5
15µF
C6
100nF
10
11
QUAD IN
GND
RSSI
SA636
J3
C14
47pF
C7
470pF
C10
15pF
C15
PWR DWN
DATA OUT
330pF
+
C8
5-30pF
L2
2.2µH
R5
1.2k
C9
82pF
L3
680nH
R6
560
SR00500
Figure 10. SA636 110.592MHz (RF) / 9.8MHz (IF) DECT Application Circuit
12
1997 Nov 07
Philips Semiconductors
Product specification
Low voltage high performance mixer FM IF system
with high-speed RSSI
SA636
Table 1.
DECT Application Circuit Electrical Characteristics
RF frequency = 110.592MHz; IF frequency = 9.8MHz; RF level = -45dBm; FM modulation = 100kHz with ±288kHz peak deviation.
SYMBOL
PARAMETER
TEST CONDITIONS
TYPICAL
UNITS
Mixer/Osc section (ext LO = 160mV
)
RMS
PG
NF
Conversion power gain
13
12
dB
dB
Noise Figure at 110MHz
Third order input intercept
RF input resistance
IIP3
Matched f1 = 110.592; f2 = 110.892MHz
-15
690
3.6
dBm
Ω
R
C
IN
IN
RF input capacitance
pF
IF section
IF amp gain
330Ω load
330Ω load
38
54
dB
dB
Limiter amp gain
Data level
R
= 3kΩ
130
700
mV
RMS
LOAD
3dB data bandwidth
kHz
RF/IF section (internal LO)
System RSSI output
RF level = -10dBm
RF level = -83dBm
1.4
10
V
1
System S/N
dB
NOTE:
-3
1. 10dB S/N corresponds to BER = 10 .
RF GENERATOR
110.592MHz
SA636 DEMO BOARD
RSSI
DATA
V
CC
= 3V
LO / GENERATOR
120.392MHz
DC VOLTMETER
SPECTRUM
ANALYZER
SCOPE
SR00502
Figure 11. SA636 Application Circuit Test Set Up
NOTES:
1. RF generator: Set your RF generator at 110.592MHz, use a 100kHz modulation frequency and a ±288kHz deviation.
2. Layout: The layout is very critical in the performance of the receiver. We highly recommend our demo board layout.
3. RSSI: The smallest RSSI voltage (i.e., when no RF input is present and the input is terminated) is a measure of the quality of the layout and
design. If the lowest RSSI voltage is 500mV or higher, it means the receiver is in regenerative mode. In that case, the receiver sensitivity
will be worse than expected.
4. Supply bypass and shielding: All of the inductors, the quad tank, and their shield must be grounded. A 0.1µF bypass capacitor on the
supply pin improves sensitivity.
13
1997 Nov 07
Philips Semiconductors
Product specification
Low voltage high performance mixer FM IF system
with high-speed RSSI
SA636
TOP SILK SCREEN (SSOP)
SR00503
Figure 12. SA636 Demoboard Layout (Not Actual Size)
14
1997 Nov 07
Philips Semiconductors
Product specification
Low voltage high performance mixer FM IF system
with high-speed RSSI
SA636
or interstage network does not cause 6dB(v) insertion loss, a fixed
or variable resistor can be added between the first IF output (Pin 16)
and the interstage network.
CIRCUIT DESCRIPTION
The SA636 is an IF signal processing system suitable for second IF
or single conversion systems with input frequency as high as 1GHz.
The bandwidth of the IF amplifier is about 40MHz, with 38dB of gain
from a 50Ω source. The bandwidth of the limiter is about 28MHz
with about 54dB of gain from a 50Ω source. However, the
gain/bandwidth distribution is optimized for 10.7MHz, 330Ω source
applications. The overall system is well-suited to battery operation
as well as high performance and high quality products of all types,
such as cordless and cellular hand-held phones.
The signal from the second limiting amplifier goes to a Gilbert cell
quadrature detector. One port of the Gilbert cell is internally driven
by the IF. The other output of the IF is AC-coupled to a tuned
quadrature network. This signal, which now has a 90° phase
relationship to the internal signal, drives the other port of the
multiplier cell.
Overall, the IF section has a gain of 90dB. For operation at
intermediate frequency at 10.7MHz. Special care must be given to
layout, termination, and interstage loss to avoid instability.
The input stage is a Gilbert cell mixer with oscillator. Typical mixer
characteristics include a noise figure of 14dB, conversion gain of
11dB, and input third-order intercept of -16dBm. The oscillator will
operate in excess of 1GHz in L/C tank configurations. Hartley or
Colpitts circuits can be used up to 100MHz for xtal configurations.
Butler oscillators are recommended for xtal configurations up to
150MHz.
The demodulated output (DATA) of the quadrature is a voltage
output. This output is designed to handle a minimum bandwidth of
600kHz. This is designed to demodulate wideband data, such as in
DECT applications.
The output of the mixer is internally loaded with a 330Ω resistor
permitting direct connection to a 10.7MHz ceramic filter for
narrowband applications. The input resistance of the limiting IF
amplifiers is also 330Ω. With most 10.7MHz ceramic filters and
many crystal filters, no impedance matching network is necessary.
For applications requiring wideband IF filtering, such as DECT,
external LC filters are used (see Figure 10). To achieve optimum
linearity of the log signal strength indicator, there must be a 6dB(v)
insertion loss between the first and second IF stages. If the IF filter
A Receive Signal Strength Indicator (RSSI) completes the circuitry.
The output range is greater than 90dB and is temperature
compensated. This log signal strength indicator exceeds the criteria
for AMPS or TACS cellular telephone, DECT and RCR-28 cordless
telephone. This signal drives an internal op amp. The op amp is
capable of rail-to-rail output. It can be used for gain, filtering, or
2nd-order temperature compensation of the RSSI, if needed.
NOTE: dB(v) = 20log V
/V
OUT IN
15
1997 Nov 07
Philips Semiconductors
Product specification
Low voltage high performance mixer FM IF system
with high-speed RSSI
SA636
SO20: plastic small outline package; 20 leads; body width 7.5 mm
SOT163-1
16
1997 Nov 07
Philips Semiconductors
Product specification
Low voltage high performance mixer FM IF system
with high-speed RSSI
SA636
DEFINITIONS
Data Sheet Identification
Product Status
Definition
This data sheet contains the design target or goal specifications for product development. Specifications
may change in any manner without notice.
Objective Specification
Formative or in Design
This data sheet contains preliminary data, and supplementary data will be published at a later date. Philips
Semiconductors reserves the right to make changes at any time without notice in order to improve design
and supply the best possible product.
Preliminary Specification
Product Specification
Preproduction Product
Full Production
This data sheet contains Final Specifications. Philips Semiconductors reserves the right to make changes
at any time without notice, in order to improve design and supply the best possible product.
Philips Semiconductors and Philips Electronics North America Corporation reserve the right to make changes, without notice, in the products,
including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright,
or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified. Applications that are described herein for any of these products are for illustrative purposes
only. PhilipsSemiconductorsmakesnorepresentationorwarrantythatsuchapplicationswillbesuitableforthespecifiedusewithoutfurthertesting
or modification.
LIFE SUPPORT APPLICATIONS
Philips Semiconductors and Philips Electronics North America Corporation Products are not designed for use in life support appliances, devices,
orsystemswheremalfunctionofaPhilipsSemiconductorsandPhilipsElectronicsNorthAmericaCorporationProductcanreasonablybeexpected
to result in a personal injury. Philips Semiconductors and Philips Electronics North America Corporation customers using or selling Philips
Semiconductors and Philips Electronics North America Corporation Products for use in such applications do so at their own risk and agree to fully
indemnify Philips Semiconductors and Philips Electronics North America Corporation for any damages resulting from such improper use or sale.
Philips Semiconductors
811 East Arques Avenue
P.O. Box 3409
Sunnyvale, California 94088–3409
Philips Semiconductors and Philips Electronics North America Corporation
register eligible circuits under the Semiconductor Chip Protection Act.
Copyright Philips Electronics North America Corporation 1994
All rights reserved. Printed in U.S.A.
Telephone 800-234-7381
17
1997 Nov 07
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The SA636 is a low-voltage high performance monolithic FM IF system with high-speed RSSI
incorporating a mixer/oscillator, two limiting intermediate frequency amplifiers, quadrature detector,
logarithmic received signal strength indicator (RSSI), voltage regulator, wideband data output and fast RSSI
op amps. The SA636 is available in 20-lead SSOP (shrink small outline package).
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The SA636 was designed for high bandwidth portable communication applications and will function down
to 2.7V. The RF section is similar to the famous SA605. The data output has a minimum bandwidth of
600kHz. This is designed to demodulate wideband data. The RSSI output is amplified. The RSSI output has
access to the feedback pin. This enables the designer to adjust the level of the outputs or add filtering.
Models
•
•
SoC solutions
SA636 incorporates a power down mode which powers down the device when Pin 8 is low. Power down
logic levels are CMOS and TTL compatible with high input impedance.
Features
●
●
●
●
●
●
●
●
●
●
Wideband data output (600kHz min.)
Fast RSSI rise and fall times
Low power consumption: 6.5mA typ at 3V
Mixer input to >500MHz
Mixer conversion power gain of 11dB at 240MHz
Mixer noise figure of 12dB at 240MHz
XTAL oscillator effective to 150MHz (L.C. oscillator to 1GHz local oscillator can be injected)
92dB of IF Amp/Limiter gain
25MHz limiter small signal bandwidth
Temperature compensated logarithmic Received Signal Strength Indicator (RSSI) with a dynamic
range in excess of 90dB
●
●
●
RSSI output internal op amp
Internal op amps with rail-to-rail outputs
Low external component count; suitable for crystal/ceramic/LC filters
●
●
Excellent sensitivity: 0.54µV into 50Ω matching network for 12dB SINAD (Signal to Noise and
Distortion ratio) for 1kHz tone with RF at 240MHz and IF at 10.7MHz
ESD hardened
●
●
10.7MHz filter matching (330Ω)
Power down mode (I = 200µA)
CC
Applications
●
●
●
●
●
●
●
DECT (Digital European Cordless Telephone)
Digital cordless telephones
Digital cellular telephones
Portable high performance communications receivers
Single conversion VHF/UHF receivers
FSK and ASK data receivers
Wireless LANs
Datasheet
Type
number
Title
Publication
release date
Datasheet status Page
count
File
size
(kB)
Datasheet
SA636
Low voltage high 11/7/1997
performance
Product
specification
17
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mixer FM IF
system with high-
speed RSSI
Blockdiagram(s)
Block diagram of
SA636DK
Parametrics
Type number Package
Application FUNCTION Operating Voltage No. of Current Power
temp.(Cel)
Pins
SOT266-1
SA636DK
Wireless
FM IF systems -40~85
Low
20
Low
Low
(SSOP20)
Products, packages, availability and ordering
Type
North
Ordering code Marking/Packing Package Device status Buy online
IC packing info
number
American (12NC)
type
number
SOT266-1
(SSOP20)
Standard Marking
* Tube
Full production
Full production
SA636DK SA636DK 9351 667 50112
Standard Marking
9351 667 50118 * Reel Pack, SMD,
13"
SOT266-1
(SSOP20)
SA636DK-
T
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