935173420112 [NXP]

IC ABT SERIES, 16 1-BIT REGISTERED TRANSCEIVER, TRUE OUTPUT, PDSO56, 7.50 MM, PLASTIC, MO-118, SOT-371-1, SSOP3-56, Bus Driver/Transceiver;
935173420112
型号: 935173420112
厂家: NXP    NXP
描述:

IC ABT SERIES, 16 1-BIT REGISTERED TRANSCEIVER, TRUE OUTPUT, PDSO56, 7.50 MM, PLASTIC, MO-118, SOT-371-1, SSOP3-56, Bus Driver/Transceiver

光电二极管 输出元件
文件: 总12页 (文件大小:107K)
中文:  中文翻译
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INTEGRATED CIRCUITS  
74ABT16543  
16-bit latched transceiver  
with dual enable (3-State)  
Product data  
2002 Apr 03  
Replaces 74ABT16543; 74ABTH16543 dated 1998 Feb 27  
Philips  
Semiconductors  
Philips Semiconductors  
Product data  
16-bit latched transceiver with dual enable  
(3-State)  
74ABT16543  
FEATURES  
DESCRIPTION  
The 74ABT16543 high-performance BiCMOS device combines low  
static and dynamic power dissipation with high speed and high  
output drive.  
Two 8-bit octal transceivers with D-type latch  
Live insertion/extraction permitted  
Power-up 3-State  
The 74ABT16543 16-bit registered transceiver contains two sets of  
D-type latches for temporary storage of data flowing in either  
direction. Separate Latch Enable (nLEAB, nLEBA) and Output  
Enable (nOEAB, nOEBA) inputs are provided for each register to  
permit independent control of data transfer in either direction. The  
outputs are guaranteed to sink 64 mA.  
Power-up reset  
Multiple V and GND pins minimize switching noise  
CC  
Back-to-back registers for storage  
Separate controls for data flow in each direction  
Output capability: +64 mA/–32 mA  
Latch-up protection exceeds 500 mA per JEDEC Std 17  
ESD protection exceeds 2000 V per MIL STD 883 Method 3015  
and 200 V per Machine Model  
QUICK REFERENCE DATA  
CONDITIONS  
= 25 °C; GND = 0 V  
SYMBOL  
PARAMETER  
TYPICAL  
UNIT  
T
amb  
t
t
Propagation delay  
nAx to nBx  
2.5  
2.2  
PLH  
PHL  
C = 50 pF; V = 5 V  
ns  
L
CC  
C
Input capacitance  
I/O capacitance  
V = 0 V or V  
CC  
3
7
pF  
pF  
IN  
I
C
V
O
= 0 V or V  
3-State  
CC;  
I/O  
I
Outputs disabled; V = 5.5 V  
550  
9
µA  
mA  
CCZ  
CC  
Quiescent supply current  
I
Outputs low; V = 5.5 V  
CC  
CCL  
ORDERING INFORMATION  
PACKAGES  
TEMPERATURE RANGE  
ORDER CODE  
74ABT16543DL  
74ABT16543DGG  
DWG NUMBER  
SOT371-1  
56-Pin Plastic SSOP Type III  
56-Pin Plastic TSSOP Type II  
–40 °C to +85 °C  
–40 °C to +85 °C  
SOT364-1  
PIN DESCRIPTION  
PIN NUMBER  
SYMBOL  
NAME AND FUNCTION  
Data inputs/outputs  
Data inputs/outputs  
5, 6, 8, 9, 10, 12, 13, 14  
15, 16, 17, 19, 20, 21, 23, 24  
1A0 – 1A7,  
2A0 – 2A7  
52, 51, 49, 48, 47, 45, 44, 43  
42, 41, 40,38, 37, 36, 34, 33  
1B0 – 1B7,  
2B0 – 2B7  
1, 56  
28, 29  
1OEAB, 1OEBA,  
2OEAB, 2OEBA  
A-to-B / B-to-A Output Enable inputs (Active-LOW)  
A-to-B / B-to-A Enable inputs (Active-LOW)  
3, 54  
26, 31  
1EAB, 1EBA,  
2EAB, 2EBA  
2, 55  
27, 30  
1LEAB, 1LEBA,  
2LEAB, 2LEBA  
A-to-B / B-to-A Latch Enable inputs (Active-LOW)  
4, 11, 18, 25, 32, 39, 46, 53  
7, 22, 35, 50  
GND  
Ground (0 V)  
V
CC  
Positive supply voltage  
2
2002 Apr 03  
853-1739 27958  
Philips Semiconductors  
Product data  
16-bit latched transceiver with dual enable  
(3-State)  
74ABT16543  
LOGIC SYMBOL (IEEE/IEC)  
PIN CONFIGURATION  
1
2
56  
55  
1OEAB  
1LEAB  
1EAB  
GND  
1OEBA  
1LEBA  
56  
1OEBA  
1EBA  
1EN3  
G1  
54  
3
54 1EBA  
55  
1
1LEBA  
1OEAB  
1C5  
GND  
1B0  
4
53  
52  
2EN4  
1A0  
5
3
2
1EAB  
G2  
1A1  
6
51 1B1  
1LEAB  
2C6  
7
50  
49  
48  
47  
46  
45  
44  
43  
42  
41  
40  
39  
38  
V
V
CC  
CC  
29  
31  
2OEBA  
2EBA  
7EN9  
G7  
8
1A2  
1A3  
1B2  
1B3  
9
30  
28  
1A4  
1B4  
10  
11  
12  
13  
14  
15  
16  
17  
18  
19  
2LEBA  
2OEAB  
7C11  
GND  
1A5  
1A6  
1A7  
2A0  
GND  
1B5  
1B6  
1B7  
2B0  
8EN10  
26  
27  
2EAB  
G8  
2LEAB  
8C12  
5
52  
3
1A0  
1B0  
5D  
2A1  
2A2  
2B1  
2B2  
6D  
4
6
51  
49  
48  
47  
45  
1A1  
1A2  
1A3  
1A4  
1A5  
1B1  
1B2  
1B3  
1B4  
1B5  
8
GND  
2A3  
GND  
2B3  
9
10  
12  
2A4 20  
37 2B4  
21  
22  
23  
24  
36  
35  
34  
33  
2A5  
2B5  
V
13  
14  
15  
44  
43  
42  
1A6  
1A7  
2A0  
1B6  
1B7  
2B0  
V
CC  
CC  
2A6  
2B6  
2B7  
9
11D  
10  
2A7  
12D  
GND 25  
32 GND  
16  
17  
19  
41  
40  
38  
2A1  
2A2  
2A3  
2B1  
2B2  
2B3  
26  
27  
28  
31  
30  
29  
2EAB  
2LEAB  
2OEAB  
2EBA  
2LEBA  
2OEBA  
20  
21  
37  
36  
2A4  
2A5  
2B4  
2B5  
SH00037  
23  
24  
34  
33  
2A6  
2A7  
2B6  
2B7  
SH00036  
3
2002 Apr 03  
Philips Semiconductors  
Product data  
16-bit latched transceiver with dual enable  
(3-State)  
74ABT16543  
LOGIC SYMBOL  
FUNCTIONAL DESCRIPTION  
The 74ABT16543 contains two sets of eight D-type latches, with  
separate control pins for each set. Using data flow from A to B as an  
example, when the A-to-B Enable (nEAB) input and the A-to-B Latch  
Enable (nLEAB) input are LOW the A-to-B path is transparent.  
5
6
8
9
10 12 13 14  
1A0 1A1 1A2 1A3 1A4 1A5 1A6 1A7  
1EAB  
A subsequent LOW-to-HIGH transition of the nLEAB signal puts the  
A data into the latches where it is stored and the B outputs no longer  
change with the A inputs. With EAB and nOEAB both LOW, the  
3-State B output buffers are active and display the data present at  
the outputs of the A latches.  
3
54  
2
1EBA  
1OEAB  
1OEBA  
1
1LEAB  
1LEBA  
56  
55  
1B0 1B1 1B2 1B3 1B4 1B5 1B6 1B7  
Control of data flow from B to A is similar, but using the nEBA,  
nLEBA, and nOEBA inputs.  
52 51 49 48 47 45 44 43  
15 16 17 19 20 21 23 24  
2A0 2A1 2A2 2A3 2A4 2A5 2A6 2A7  
2EAB  
26  
31  
27  
30  
2EBA  
2OEAB  
2OEBA  
28  
29  
2LEAB  
2LEBA  
2B0 2B1 2B2 2B3 2B4 2B5 2B6 2B7  
42 41 40 38 37 36 34 33  
SH00038  
FUNCTION TABLE  
INPUTS  
OUTPUTS  
STATUS  
nBx or nAx  
nOEXX  
nEXX  
nLEXX  
nAx or nBx  
H
X
X
H
X
X
X
X
Z
Z
Disabled  
Disabled  
L
L
L
L
h
l
Z
Z
Disabled + Latch  
Latch + Display  
L
L
L
L
h
l
H
L
L
L
L
L
L
L
H
L
H
L
Transparent  
Hold  
L
L
H
X
NC  
H
h
L
l
X
=
=
=
=
=
=
High voltage level  
High voltage level one set-up time prior to the LOW-to-HIGH transition of nLEXX or nEXX (XX = AB or BA)  
Low voltage level  
Low voltage level one set-up time prior to the LOW-to-HIGH transition of nLEXX or nEXX (XX = AB or BA)  
Don’t care  
LOW-to-HIGH transition of nLEXX or nEXX (XX = AB or BA)  
NC= No change  
High impedance or “off” state  
Z
=
4
2002 Apr 03  
Philips Semiconductors  
Product data  
16-bit latched transceiver with dual enable  
(3-State)  
74ABT16543  
LOGIC DIAGRAM  
DETAIL A  
nB0  
D
Q
LE  
nA0  
Q
D
LE  
nA1  
nA2  
nA3  
nA4  
nA5  
nA6  
nA7  
nB1  
nB2  
nB3  
nB4  
nB5  
nB6  
nB7  
DETAIL A X 7  
nOEBA  
nOEAB  
nEAB  
nEBA  
nLEBA  
nLEAB  
SH00039  
1, 2  
ABSOLUTE MAXIMUM RATINGS  
SYMBOL  
PARAMETER  
DC supply voltage  
CONDITIONS  
RATING  
–0.5 to +7.0  
UNIT  
V
V
CC  
I
IK  
DC input diode current  
V < 0 V  
I
–18  
–1.2 to +7.0  
–50  
mA  
V
3
V
I
DC input voltage  
I
DC output diode current  
V
O
< 0 V  
mA  
V
OK  
3
V
OUT  
DC output voltage  
output in Off or HIGH state  
output in LOW state  
–0.5 to +5.5  
128  
mA  
mA  
°C  
I
DC output current  
OUT  
output in HIGH state  
–64  
T
stg  
Storage temperature range  
–65 to +150  
NOTES:  
1. Stresses beyond those listed may cause permanent damage to the device. These are stress ratings only and functional operation of the  
device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to  
absolute-maximum-rated conditions for extended periods may affect device reliability.  
2. The performance capability of a high-performance integrated circuit in conjunction with its thermal environment can create junction  
temperatures which are detrimental to reliability. The maximum junction temperature of this integrated circuit should not exceed 150 °C.  
3. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.  
5
2002 Apr 03  
Philips Semiconductors  
Product data  
16-bit latched transceiver with dual enable  
(3-State)  
74ABT16543  
RECOMMENDED OPERATING CONDITIONS  
LIMITS  
SYMBOL  
PARAMETER  
UNIT  
Max  
Min  
4.5  
0
V
CC  
DC supply voltage  
5.5  
V
V
V
I
Input voltage  
V
CC  
V
HIGH-level input voltage  
LOW-level Input voltage  
HIGH-level output current  
LOW-level output current  
Input transition rise or fall rate  
2.0  
V
IH  
V
0.8  
–32  
64  
V
IL  
I
mA  
mA  
ns/V  
°C  
OH  
I
OL  
t/v  
0
10  
T
amb  
Operating free-air temperature range  
–40  
+85  
DC ELECTRICAL CHARACTERISTICS  
LIMITS  
T
= –40 °C  
to +85 °C  
amb  
T
amb  
= +25 °C  
SYMBOL  
PARAMETER  
TEST CONDITIONS  
UNIT  
MIN  
TYP  
MAX  
MIN  
MAX  
V
Input clamp voltage  
V
CC  
V
CC  
V
CC  
V
CC  
V
CC  
V
CC  
= 4.5 V; I = –18 mA  
–1.2  
–1.2  
V
V
V
V
V
V
IK  
IK  
= 4.5 V; I = –3 mA; V = V or V  
2.5  
3.0  
2.0  
2.9  
3.4  
2.5  
3.0  
2.0  
OH  
I
IL  
IH  
IH  
V
OH  
HIGH-level output voltage  
= 5.0 V; I = –3 mA; V = V or V  
OH  
I
IL  
= 4.5 V; I = –32 mA; V = V or V  
IH  
2.4  
OH  
I
IL  
V
OL  
LOW-level output voltage  
= 4.5 V; I = 64 mA; V = V or V  
IH  
0.36  
0.13  
0.55  
0.55  
0.55  
0.55  
OL  
I
IL  
3
V
RST  
Power-up output voltage  
= 5.5 V; I = 1 mA; V = GND or V  
O I CC  
Input leakage  
current  
Control  
pins  
"0.01  
"2.0  
"1.0  
I
V
= 5.5 V; V = GND or 5.5 V  
±1.0  
±100  
±50  
±1.0  
±100  
±50  
µA  
µA  
µA  
I
CC  
I
I
Power-off leakage current  
Power-up/down 3-State  
V
V
= 0.0 V; V or V 4.5 V  
OFF  
CC  
O
I
= 2.1 V; V = 0.0 V or V  
;
CC  
CC  
O
I
PU/PD  
4
output current  
V = GND or V ; V = Don’t care  
I
CC  
OE  
I
+ I  
+ I  
3-State output High current  
3-State output Low current  
Output High leakage current  
V
V
V
V
V
V
V
= 5.5 V; V = 5.5 V; V = V or V  
1.0  
–1.0  
1.0  
10  
–10  
50  
10  
–10  
50  
µA  
µA  
IH  
OZH  
OZL  
CC  
CC  
CC  
CC  
CC  
CC  
CC  
O
I
IL  
IH  
IH  
I
= 5.5 V; V = 0.0 V; V = V or V  
O I IL  
IL  
I
= 5.5 V; V = 5.5 V; V = GND or V  
CC  
µA  
CEX  
O
I
1
I
O
Output current  
= 5.5 V; V = 2.5 V  
–50  
–100  
0.55  
9
–200  
2
–50  
–200  
2
mA  
mA  
mA  
O
I
= 5.5 V; Outputs HIGH, V = GND or V  
CCH  
I
CC  
I
= 5.5 V; Outputs LOW, V = GND or V  
19  
19  
CCL  
I
CC  
Quiescent supply current  
Additional supply current  
= 5.5 V; Outputs 3–State;  
I
0.55  
5.0  
2
2
mA  
CCZ  
V = GND or V  
I
CC  
V
CC  
= 5.5 V; one input at 3.4 V,  
I  
CC  
50  
50  
µA  
2
per input pin  
other inputs at V or GND  
CC  
NOTES:  
1. Not more than one output should be tested at a time, and the duration of the test should not exceed one second.  
2. This is the increase in supply current for each input at 3.4 V.  
3. For valid test results, data must not be loaded into the flip-flops (or latches) after applying the power.  
4. This parameter is valid for any V between 0 V and 2.1 V, with a transition time of up to 10 msec. From V = 2.1 V to V = 5 V ± 10% a  
CC  
CC  
CC  
transition time of up to 100 µsec is permitted.  
6
2002 Apr 03  
Philips Semiconductors  
Product data  
16-bit latched transceiver with dual enable  
(3-State)  
74ABT16543  
AC CHARACTERISTICS  
GND = 0 V, t = t = 2.5 ns, C = 50 pF, R = 500 Ω  
R
F
L
L
LIMITS  
T
V
= +25 °C  
= +5.0 V  
T
= –40 °C to +85 °C  
amb  
CC  
amb  
V
SYMBOL  
PARAMETER  
WAVEFORM  
UNIT  
= +5.0 V ±0.5 V  
CC  
MIN  
TYP  
MAX  
MIN  
MAX  
t
t
Propagation delay  
nAx to nBx, nBx to nAx  
1.0  
1.0  
2.5  
2.2  
3.3  
4.4  
1.0  
1.0  
3.8  
5.1  
PLH  
PHL  
2
ns  
ns  
ns  
ns  
ns  
ns  
t
t
Propagation delay  
LEBA to nAx, LEAB to nBx  
1.0  
1.2  
3.1  
3.0  
4.3  
4.8  
1.0  
1.2  
5.2  
5.6  
PLH  
PHL  
1, 2  
t
Output enable time  
OEBA to nAx, OEAB to nBx  
4
5
1.0  
1.1  
3.3  
3.3  
4.3  
5.9  
1.0  
1.1  
5.2  
7.0  
PZH  
t
PZL  
t
Output disable time  
OEBA to nAx, OEAB to nBx  
4
5
1.9  
1.6  
3.5  
2.6  
5.0  
4.2  
1.9  
1.6  
5.7  
4.6  
PHZ  
t
PLZ  
t
Output enable time  
EBA to nAx, EAB to nBx  
4
5
1.0  
1.2  
3.4  
3.4  
4.9  
6.5  
1.0  
1.2  
6.2  
7.8  
PZH  
t
PZL  
t
Output disable time  
EBA to nAx, EAB to nBx  
4
5
2.0  
1.7  
3.4  
2.6  
5.6  
5.1  
2.0  
1.7  
6.6  
5.4  
PHZ  
t
PLZ  
AC SETUP REQUIREMENTS  
GND = 0 V, t = t = 2.5 ns, C = 50 pF, R = 500 Ω  
R
F
L
L
LIMITS  
T
V
= +25 °C  
= +5.0 V  
T
= –40 °C to +85 °C  
amb  
CC  
amb  
V
SYMBOL  
PARAMETER  
WAVEFORM  
UNIT  
= +5.0 V ±0.5 V  
CC  
MIN  
TYP  
MIN  
t (H)  
t (L)  
s
Set-up time  
nAx to LEAB, nBx to LEBA  
1.5  
3.5  
0.4  
–0.1  
1.5  
3.5  
s
3
3
3
ns  
ns  
ns  
t (H)  
Hold time  
nAx to LEAB, nBx to LEBA  
1.5  
2.0  
0.2  
–0.3  
1.5  
2.0  
h
t (L)  
h
t (H)  
Set-up time  
nAx to EAB, nBx to EBA  
1.5  
3.5  
0.2  
–0.3  
1.5  
3.5  
s
t (L)  
s
t (H)  
t (L)  
h
Hold time  
nAx to EAB, nBx to EBA  
1.5  
2.0  
0.3  
–0.2  
1.5  
2.0  
h
3
3
ns  
ns  
t (L)  
w
Latch enable pulse width, LOW  
4.0  
3.1  
4.0  
AC WAVEFORMS  
V
M
= 1.5 V, V = GND to 3.0 V  
IN  
V
V
IN  
IN  
V
V
V
V
M
M
t
M
M
t
t
t
PLH  
PHL  
PHL  
PLH  
V
V
OUT  
OUT  
V
V
V
V
M
M
M
M
SH00040  
SH00041  
Waveform 1. Propagation Delay for Inverting Output  
Waveform 2. Propagation Delay for Non-Inverting Output  
7
2002 Apr 03  
Philips Semiconductors  
Product data  
16-bit latched transceiver with dual enable  
(3-State)  
74ABT16543  
AC WAVEFORMS (Continued)  
V
M
= 1.5 V, V = GND to 3.0 V  
IN  
nAx, nBx  
nOEAB, nOEBA,  
nEAB, nEBA  
V
V
V
V
V
M
M
M
M
V
V
M
M
t
t (H)  
t (L)  
s
t
(H)  
t (L)  
h
s
h
t
PZL  
PLZ  
nLEAB, nLEBA,  
nEAB, nEBA  
V
nAx, nBx  
V
M
M
M
V
V
+0.3V  
OL  
t
(L)  
w
OL  
NOTE: The shaded areas indicate when the input is permitted  
to change for predictable output performance.  
SH00042  
SH00044  
Waveform 3. Data Setup and Hold Times  
and Latch Enable Pulse Width  
Waveform 5. 3-State Output Enable Time to Low Level and  
Output Disable Time from Low Level  
nOEAB, nOEBA,  
nEAB, nEBA  
V
V
M
M
t
t
PZH  
PHZ  
V
OH  
V
–0.3V  
OH  
V
nAx, nBx  
M
0V  
SH00043  
Waveform 4. 3-State Output Enable Time to High Level and  
Output Disable Time from High Level  
TEST CIRCUIT AND WAVEFORMS  
t
W
V
AMP (V)  
CC  
90%  
90%  
7.0V  
NEGATIVE  
PULSE  
V
V
M
M
10%  
10%  
90%  
R
L
0V  
(t  
V
V
OUT  
IN  
PULSE  
GENERATOR  
D.U.T.  
t
t
(t  
(t  
)
t
TLH  
)
THL  
F
R
)
t
(t )  
R
R
L
C
TLH  
R
THL F  
T
L
AMP (V)  
90%  
M
POSITIVE  
PULSE  
V
V
M
Test Circuit for 3-State Outputs  
10%  
10%  
t
W
0V  
SWITCH POSITION  
V
= 1.5V  
M
TEST  
SWITCH  
Input Pulse Definition  
t
closed  
PLZ  
PZL  
t
closed  
open  
All other  
INPUT PULSE REQUIREMENTS  
DEFINITIONS  
R = Load resistor; see AC CHARACTERISTICS for value.  
L
FAMILY  
Amplitude  
3.0V  
Rep. Rate  
1MHz  
t
t
t
F
W
R
C = Load capacitance includes jig and probe capacitance;  
L
see AC CHARACTERISTICS for value.  
74ABT/H16  
500ns 2.5ns 2.5ns  
R = Termination resistance should be equal to Z  
T
of  
OUT  
pulse generators.  
SA00018  
8
2002 Apr 03  
Philips Semiconductors  
Product data  
16-bit latched transceiver with dual enable  
(3-State)  
74ABT16543  
SSOP56: plastic shrink small outline package; 56 leads; body width 7.5 mm  
SOT371-1  
9
2002 Apr 03  
Philips Semiconductors  
Product data  
16-bit latched transceiver with dual enable  
(3-State)  
74ABT16543  
TSSOP56: plastic thin shrink small outline package; 56 leads; body width 6.1 mm  
SOT364-1  
10  
2002 Apr 03  
Philips Semiconductors  
Product data  
16-bit latched transceiver with dual enable  
(3-State)  
74ABT16543  
NOTES  
11  
2002 Apr 03  
Philips Semiconductors  
Product data  
16-bit latched transceiver with dual enable  
(3-State)  
74ABT16543  
Data sheet status  
Product  
status  
Definitions  
[1]  
Data sheet status  
[2]  
Objective data  
Development  
This data sheet contains data from the objective specification for product development.  
Philips Semiconductors reserves the right to change the specification in any manner without notice.  
Preliminary data  
Product data  
Qualification  
Production  
This data sheet contains data from the preliminary specification. Supplementary data will be  
published at a later date. Philips Semiconductors reserves the right to change the specification  
without notice, in order to improve the design and supply the best possible product.  
This data sheet contains data from the product specification. Philips Semiconductors reserves the  
right to make changes at any time in order to improve the design, manufacturing and supply.  
Changes will be communicated according to the Customer Product/Process Change Notification  
(CPCN) procedure SNW-SQ-650A.  
[1] Please consult the most recently issued data sheet before initiating or completing a design.  
[2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL  
http://www.semiconductors.philips.com.  
Definitions  
Short-form specification — The data in a short-form specification is extracted from a full data sheet with the same type number and title. For  
detailed information see the relevant data sheet or data handbook.  
Limiting values definition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one  
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or  
at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended  
periods may affect device reliability.  
Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips  
Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or  
modification.  
Disclaimers  
Life support — These products are not designed for use in life support appliances, devices or systems where malfunction of these products can  
reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications  
do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application.  
RighttomakechangesPhilipsSemiconductorsreservestherighttomakechanges, withoutnotice, intheproducts, includingcircuits,standard  
cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no  
responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these  
products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless  
otherwise specified.  
Koninklijke Philips Electronics N.V. 2002  
Contact information  
All rights reserved. Printed in U.S.A.  
For additional information please visit  
http://www.semiconductors.philips.com.  
Fax: +31 40 27 24825  
Date of release: 04-02  
9397 750 09692  
For sales offices addresses send e-mail to:  
sales.addresses@www.semiconductors.philips.com.  
Document order number:  
Philips  
Semiconductors  

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