935202550551 [NXP]
IC TELECOM, CORDLESS, SUPPORT CIRCUIT, PQFP32, PLASTIC, SOT-401, LQFP-32, Cordless Telephone IC;
| 型号： | 935202550551 |
| 厂家： | 
NXP |
| 描述： | IC TELECOM, CORDLESS, SUPPORT CIRCUIT, PQFP32, PLASTIC, SOT-401, LQFP-32, Cordless Telephone IC 无绳技术 电信 信息通信管理 电信集成电路 |
| 文件： | 总27页 (文件大小：189K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INTEGRATED CIRCUITS
DATA SHEET
UAA2067G
Image reject 1800 MHz transceiver
for DECT applications
1996 Oct 22
Product specification
Supersedes data of 1995 Sep 18
File under Integrated Circuits, IC17
Philips Semiconductors
Product specification
Image reject 1800 MHz transceiver
for DECT applications
UAA2067G
consists of a low-noise amplifier that drives a quadrature
mixer pair. Image rejection is achieved by this RF mixer
pair and the two phase shifters in the I and Q channels that
phase shift the IF by 45° and 135° respectively. The two
phase shifted IFs are recombined and buffered to furnish
the IF output signal.
FEATURES
• Receiver with:
– low noise amplifier
– dual quadrature mixers for image rejection
(lower sideband)
– I and Q combining networks at a fixed IF
Signals presented at the RF input at LO − IF frequency are
rejected through this signal processing while signals at
LO + IF frequency can form the IF signal.
• Both high-frequency and low-frequency VCOs including
buffers with good isolation for low pulling
Its second advantage is to provide a good buffered
high-frequency VCO signal to the RX and TX mixers and
to the synthesizer-prescaler. Switching the receive or
transmit section on gives a very small change in VCO
frequency.
• Transmitter with:
– dual quadrature mixers for image rejection
(lower sideband)
– amplitude ramping circuit
– amplifier with high output power.
Its third advantage is to provide a good buffered
low-frequency VCO signal to the TX mixers, to the
synthesizer-prescaler and the second down conversion
mixer in a double conversion receiver. Switching the
transmit section on gives a very small change in
VCO frequency.
APPLICATIONS
• 1800 MHz transceiver for DECT hand-portable
equipment
• TDMA systems.
The frequency of each VCO is determined by a resonator
network that is external to the IC. Each VCO has a
regulated power supply voltage that has been designed
specifically for minimizing a change in frequency due to
changes in the power supply voltage, which may be
caused for instance by switching on the power amplifier.
GENERAL DESCRIPTION
The UAA2067G is a low-power transceiver intended for
use in portable and base station transceivers complying
with the DECT system. The IC performs in accordance
with specifications in the −30 to +85°C temperature range.
Its fourth advantage is to provide typically 33 dBc of image
rejection in the single-sideband up-conversion mixer. Thus
the image filter between the power amplifier and the
antenna is redundant and may consequently be removed.
Image rejection is achieved in the internal architecture by
two RF mixers in quadrature and two phase shifters in the
low-frequency VCO signal that shifts the phase to
The UAA2067G contains a front-end receiver for the
1800 to 1900 MHz frequency range, a high-frequency
VCO for the 1650 to 1850 MHz range, a low-frequency
VCO for the 100 to 140 MHz frequency range and a
transmitter with a high-output power amplifier driver stage
for the 1800 to 1900 MHz frequency range. Designed in
an advanced BiCMOS process, it combines high
performance with low-power consumption and a high
degree of integration, thus reducing external component
costs and total radio size.
0° and 90°. The output signals of the mixers are summed
to form the single-upper-sideband output signal.
The output stage is a high-level output buffer with an
output power of approximately 4 dBm. The output level is
sufficient to drive a three-stage bipolar preamplifier
for DECT.
Its first advantage is to provide typically 34 dB of image
rejection in the receiver path. Thus, the image filter
between the LNA and the mixer is redundant and
consequently can be removed. The receive section
ORDERING INFORMATION
PACKAGE
TYPE NUMBER
NAME
DESCRIPTION
VERSION
UAA2067G
LQFP32 plastic low profile quad flat package; 32 leads; body 5 × 5 × 1.4 mm
SOT401-1
1996 Oct 22
2
Philips Semiconductors
Product specification
Image reject 1800 MHz transceiver
for DECT applications
UAA2067G
QUICK REFERENCE DATA
For conditions see Chapters “DC characteristics” and “AC characteristics”.
SYMBOL
VCC
PARAMETER
MIN.
TYP.
MAX.
5.5
UNIT
supply voltage
3.0
−
3.6
24
42
15
7
V
ICC(RX)
ICC(TX)
ICC(RFLO)
ICC(IFLO)
NFRX
GCP
receive supply current
−
mA
mA
mA
mA
dB
transmit supply current
−
−
RF oscillator supply current
IF oscillator supply current
receive noise figure
−
−
−
−
−
−
7.0
−
conversion power gain
−
30
34
−
dB
IRRX
receive image frequency rejection
RFLO frequency range
−
−
dB
fRFLO
fIFLO
1.65
100
−
1.85
140
−
GHz
MHz
dBm
dBc
°C
IFLO frequency range
−
Pout
output transmit power
4
IRTX
transmit image frequency rejection
operating ambient temperature
−
33
−
Tamb
−30
+25
+85
1996 Oct 22
3
Philips Semiconductors
Product specification
Image reject 1800 MHz transceiver
for DECT applications
UAA2067G
BLOCK DIAGRAM
a n d b o o k , f u l l p a g e w i d t h
GM8C67
1996 Oct 22
4
Philips Semiconductors
Product specification
Image reject 1800 MHz transceiver
for DECT applications
UAA2067G
PINNING
SYMBOL
PDIFLO
PIN
DESCRIPTION
1
power-down for IFLO
regulator decoupling for IFLO
ground for IFLO; note 1
IFLO output
IFLOREG
GND1
2
3
IFLOO
VCC(IFLO)
IFLORES
GND2
4
5
supply voltage for IFLO
IFLO resonator
6
7
ground for IFLO resonator; note 1
IC enable
ICEN
8
PDTX
9
power-down for transmitter
power ramping transmitter
TXRAMP
VCC(TX)
TXB
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
supply voltage for transmitter output stage; note 2
transmitter RF output B
TXA
transmitter RF output A
GND3
ground for transmitter output stage
power-down for RFLO
PDRFLO
VCC(RFLOO)
RFLOO
VCC1(RFLO)
GND4
supply voltage for RFLO output
RFLO output
supply voltage for RFLO oscillator; note 3
ground for RFLO oscillator; note 4
RFLO resonator
RFLOA
RFLOB
GND5
RFLO resonator
ground for RFLO oscillator; note 4
supply voltage for RFLO oscillator; note 3
regulator decoupling for RFLO
receiver IF output
VCC2(RFLO)
RFLOREG
IFO
IFDEC
VCC(MIX)
RXA
IF decoupling
supply voltage for receive and transmit mixers; note 2
receiver RF input A
RXB
receiver RF input B
GND6
ground for receive and transmit mixers
power-down for receiver
PDRX
GND7
die-pad ground
Notes
1. Pins 3 and 7 are internally short-circuited.
2. Pins 11 and 27 should be at the same DC voltage.
3. Pins 18 and 23 are internally short-circuited.
4. Pins 19 and 22 are internally short-circuited.
1996 Oct 22
5
Philips Semiconductors
Product specification
Image reject 1800 MHz transceiver
for DECT applications
UAA2067G
PDIFLO
IFLOREG
GND1
1
2
3
4
5
6
7
8
24 RFLOREG
23
V
CC2(RFLO)
22 GND5
21 RFLOB
20 RFLOA
19 GND4
IFLOO
UAA2067
V
CC(IFLO)
IFLORES
GND2
ICEN
18 V
CC1(RFLO)
17 RFLOO
MGC865
Fig.2 Pin configuration.
1996 Oct 22
6
Philips Semiconductors
Product specification
Image reject 1800 MHz transceiver
for DECT applications
UAA2067G
FUNCTIONAL DESCRIPTION
Receive section
Transmit section
The circuit contains two balanced mixers, each of which is
driven by the RFLO and IFLO signals. The output signal of
the two mixers is summed and buffered to obtain the single
upper-sideband signal at frequency RFLO + IFLO.
The circuit contains a balanced low-noise amplifier
followed by two high dynamic range mixers. The local
oscillator signals, shifted in phase to 0 and 90° mix the
amplified RF signal to the I and Q channels.These two
channels are buffered, phase shifted by 45° and 135°
respectively, amplified and recombined internally to realize
the image rejection. Signals at the RF input at RFLO − IF
frequencies are rejected through the signal processing
while signals at the RFLO + IF frequencies form the
IF signals.
With the use of an off-chip time constant, the ramping
circuit defines the power ramp-up and ramp-down of the
pre-amplifier output signal.
Balanced signals are used for minimizing crosstalk due to
package parasitics.
Fast switching, on/off, of the transmit section is controlled
by the hardware input PDTX.
An image rejection of typically 34 dB is obtained for an IF
between 100 and 120 MHz.
The power supply voltage of the transmit mixers, the
adding circuit and ramping circuit is taken from the
Balanced signals are used for minimizing crosstalk due to
package parasitics. The IF output is single-ended.
The typical load is 50 Ω.
V
CC(MIX) and GND6 for maximum isolation from the
preamplifier output stage.
Fast switching, on/off of the receive section is controlled
by the hardware input PDRX.
OPERATING MODES
To use the IC, all VCC pins must be connected to the
supply voltage.
RFLO section
For transceiving a DECT signal, the RFLO and IFLO
sections should be powered-on. After a stable frequency
has been reached (mainly determined by the synthesizer
design), the receiver or transmitter can be powered-on.
The high-frequency oscillator (RFLO oscillator) supplies
the local oscillator signal for the down-conversion (receive)
and up-conversion (transmit) mixers. This VCO uses an
on-chip regulator for a power-supply voltage-independent
output frequency. The buffered VCO signal is fed into a
phase shifter and an off-chip prescaler-synthesizer.
The output signal of the phase-shifter is used for driving
the RX and TX mixers. Due to the good isolation in the
buffer stages, a very small change in VCO frequency is
obtained when switching the RX and TX mixers on.
GMSK data modulation can be supplied in two different
ways: the data is directly modulated on IFLO or RFLO.
The ramping of the power level can be set with a time
constant that is external to the IC.
Table 1 gives the definition of the polarity of the switching
signals on the receive, the RFLO, the IFLO and the
transmit sections.
Fast switching, on/off of the oscillator section is controlled
by the hardware input PDRFLO.
IFLO section
The low-frequency oscillator (IFLO oscillator) internally
supplies the local oscillator signal to the single-sideband
transmit mixer. The buffered VCO signal is fed into a
phase shifter. The output signal of the phase-shifter is
used for driving the TX mixers.
Due to the good isolation in the buffer stages, a very small
change in VCO frequency is obtained when switching the
TX mixer on.
Fast switching on/off of the oscillator section is controlled
by the hardware input PDIFLO input.
1996 Oct 22
7
Philips Semiconductors
Product specification
Image reject 1800 MHz transceiver
for DECT applications
UAA2067G
Table 1 Switching signals on the receiver
SIGNAL
PDRX
SECTION
LEVEL
on/off
receive section powered-on
receive section powered-off
RFLO section powered-on
RFLO section powered-off
IFLO section powered-on
IFLO section powered-off
transmit section powered-on
transmit section powered-off
all sections disabled
LOW
HIGH
LOW
HIGH
LOW
HIGH
LOW
HIGH
LOW
HIGH
on(1)
off
PDRFLO
PDIFLO
PDTX
on(1)
off
on(1)
off
on(1)
off
ICEN
off
all sections enabled
on
Note
1. Active when ICEN is enabled.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER
VCC
CONDITIONS
MIN.
MAX.
UNIT
supply voltage
−
−
6
V
V
∆GND
difference in ground supply voltage applied
between all grounds
note 1
+ 0.3
Pl(max)
Tj(max)
Pdis(max)
Tstg
maximum power input
−
−
−
+20
dBm
°C
maximum operating junction temperature
maximum power dissipation in stagnant air at 25°C
storage temperature
+150
500
mW
°C
−65
+150
Note
1. Pins short-circuited internally must be short-circuited externally.
THERMAL CHARACTERISTICS
SYMBOL
Rth j-a
PARAMETER
thermal resistance from junction to ambient in free air
VALUE
UNIT
90
K/W
HANDLING
Every pin withstands the ESD test in accordance with “MIL-STD-883C class 2 (method 3015.5)”.
1996 Oct 22
8
Philips Semiconductors
Product specification
Image reject 1800 MHz transceiver
for DECT applications
UAA2067G
DC CHARACTERISTICS
VCC = 3.6 V; Tamb = 25 °C; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP.
MAX.
UNIT
Pins: VCC(MIX), VCC(TX), VCC(IFLO), VCC1(RFLO), VCC2(RFLO) and VCC(RFLOO)
VCC
supply voltage
over full temperature range
receive section on; DC tested
RFLO section on; DC tested
IFLO section on; DC tested
3.0
18
11
5
3.6
24
15
7
5.5
V
ICC(RX)
ICC(RFLO)
ICC(IFLO)
ICC(TX)
ICC(PD)
supply current
30
20
9
mA
mA
mA
mA
µA
supply current RFLO
supply current IFLO
supply current
transmit section on; DC tested 34
42
2
54
50
supply current
power-down mode; DC tested
−
Pins: PDRX, PDTX, PDRFLO, PDIFLO and ICEN
VIH
VIL
IIH
HIGH level input voltage
2.1
−0.3
−1
−
−
−
−
VCC + 0.3
V
LOW level input voltage
0.8
+1
+1
V
HIGH level static input current
LOW level static input current
pin at VCC − 0.4 V
µA
µA
IIL
pin at 0.4 V
−1
Pins: RXA, RXB, IFO and IFDEC
VRXA,B
VIFO
DC input voltage level
DC output voltage level
DC level
receive section on
receive section on
receive section on
2.1
0.9
2.4
1.1
2.7
1.3
V
V
V
VIFDEC
2.45 2.65 2.85
Pins: RFLOA, RFLOB, RFLOREG and RFLOO
IRFLOA,B
VRFLOREG
VRFLOO
DC current
RFLO section on
RFLO section on
RFLO section on
1
2
3
mA
V
DC level
2.45 2.65 2.85
DC output voltage level
2.8
3.1
3.4
2.3
V
Pins: IFLORES, IFLOREG and IFLOO
VIFLORES
VIFLOREG
VIFLOO
DC level
IFLO section on
IFLO section on
IFLO section on
1.85 2.1
V
V
V
DC level
2.35 2.55 2.8
DC output voltage level
2.2
2.45 2.7
Pins: TXA, TXB and TXRAMP
ITXA,B
DC output current
DC input current
transmit section on
2
10
18
mA
ITXRAMP
VTXRAMP = 3 V;
−
−
200
µA
transmit section on
1996 Oct 22
9
Philips Semiconductors
Product specification
Image reject 1800 MHz transceiver
for DECT applications
UAA2067G
AC CHARACTERISTICS
VCC = 3.0 to 5.5 V; Tamb = −30 to +85°C; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX. UNIT
Receive mode (receive and RFLO sections powered-on)
fRFI
RF input frequency
1800
−
1900 MHz
RiRF
RF input resistance
(real part of the parallel input
impedance)
balanced; at 1890 MHz
balanced; at 1890 MHz
note 1
−
190
−
Ω
CiRF
RF input capacitance (imaginary
part of the parallel input
impedance)
−
0.8
−
pF
PRFLORX
DES3RX
RFLO level at input to RX balun
−
−
−70
−35
−40
dBm
dBm
RF interference for 3 dB
desensitization
interference frequency offset
6 MHz; note 1
−
GCP
conversion power gain
RF input to IF output
(typical load)
over full temperature range
Tamb = 25 °C
24
30
30
−33
−
36
33
−
dB
27
dB
CP1RX
Po(RX)
1 dB input compression point
referenced to RF input; note 1
−36
−6
dBm
dB
IF power for
referenced to IF power at
CP1RX; note 1
+6
CP1RX < Pin < +8 dBm
trec
recovery time for Pin = +12 dBm
note 1
−
2
30
µs
IP2-2RX
mixer 2-2 spurious intercept point referenced to the RF input;
note 1
−6
+2
−
dBm
IP3RX
3rd order intercept point
referenced to the RF input;
note 1
−30
−25
−
dBm
NFRX
fIF
overall noise figure
IF frequency range
RF input to IF output; note 1
−
5.8
110
50
7
dB
100
−
120
−
MHz
Ω
ZL(IF)
typical application IF output load
impedance
fIF = 110 MHz
IRRX
image frequency rejection
over full temperature range
20
23
34
34
−
−
−
−
dB
dB
dB
T
amb = 25 °C
PSRR
power supply rejection ratio
note 1; typical load; at 110 MHz 35
1996 Oct 22
10
Philips Semiconductors
Product specification
Image reject 1800 MHz transceiver
for DECT applications
UAA2067G
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX. UNIT
RF local oscillator (RFLO section powered-on)
fRFLO(min)
Ri(RFLO)
minimum oscillator frequency
range
1650
−
1850 MHz
oscillator input resistance (real
part of the parallel input
impedance)
balanced; at 1.77 GHz
−
−250
−
−
−
Ω
Ci(RFLO)
oscillator input capacitance
(imaginary part of the parallel
input impedance)
balanced; at 1.77 GHz
−
2.7
75
pF
Vo(RFLO)
Zo(RFLO)
local oscillator output level at
pin 17; RMS value
note 2; typical load resistance
50
mV
local oscillator output impedance at 1.77 GHz
at pin 17
−
30 − 60j −
Ω
RL(RFLO)
typical load resistance
−
−
300
−
Ω
HAR(RFLO)
harmonic levels at RFLO output
(pin 17)
note 1
−
−20
dBc
IF local oscillator (IFLO section powered-on)
fIFLO(min)
minimum oscillator frequency
range
100
120
140
MHz
Ri(IFLO)
oscillator input resistance
(real part of the parallel input
impedance)
−
−480
−
Ω
Ci(IFLO)
oscillator input capacitance
(imaginary part of the parallel
input impedance)
−
2.1
−
pF
Vo(IFLO)
Zo(IFLO)
IF local oscillator output level at
pin 4; RMS value
100
160
−
mV
local oscillator output impedance
(real part)
−
−
100
Ω
RL(IFLO)
CL(IFLO)
HAR(IFLO)
typical load resistance
−
−
−
5
7
−
−
kΩ
pF
typical load capacitance
harmonic levels at IFLO output
−
note 1
−15
dBc
1996 Oct 22
11
Philips Semiconductors
Product specification
Image reject 1800 MHz transceiver
for DECT applications
UAA2067G
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX. UNIT
Transmit mode (transmit, RFLO and IFLO sections powered-on)
fTX
RF output frequency
1800
−
1900 MHz
Ro(TX)
RF output resistance (real part of balanced; note 1
the parallel output impedance)
−
110
−
Ω
Co(TX)
RF output capacitance (imaginary balanced; note 1
part of the parallel output
impedance)
−
−
0.6
−
pF
FTRFLOTX
Pout
RFLO feedthrough at the TX
output
referenced to the desired
frequency; Tamb = 25 °C; note 1
−25
−23
dBc
output transmit power
VTXRAMP = 0 V; note 1
over full temperature range
−2
4
4
8
7
dBm
dBm
T
amb = 25 °C
1
IRTX
image frequency rejection
referenced to the desired
frequency; note 1
over full temperature range
20
23
10
−
33
33
−
−
dBc
dBc
kΩ
pF
V
Tamb = 25 °C
−
ZinTXRAMP
CinTXRAMP
input impedance at pin TXRAMP
input capacitance at pin TXRAMP
−
−
10
VTXRAMP(max) ramp voltage for Pout = Pmax
VTXRAMP(min) ramp voltage for
−
0
−
3.0
−
−
V
P
out = Pmax − 30 dB
CNRTX
Timing
tup
carrier-to-noise ratio at TX output Tamb = 25 °C; notes 1 and 3
+130 +133
dBc/Hz
start-up/power-down time of each over full temperature range
block
−
−
5
10
5
µs
Ci
input capacitance of logic inputs
over full temperature range
−
pF
Notes
1. Measured and guaranteed only on the Philips demonstration board, including PCB and balun.
2. The imaginary part of the load impedance has been tuned out. A power match is assumed.
3. A simplified DECT type approval measurement is used; the spectrum analyser has the following settings:
RBW = 100 kHz, VBW = 100 Hz, use delta marker and add 50 dB (correction for RBW = 100 kHz), fRFLO = 1.77 GHz
and fIFLO = 120 MHz, ∆f = 4.686 MHz.
1996 Oct 22
12
Philips Semiconductors
Product specification
Image reject 1800 MHz transceiver
for DECT applications
UAA2067G
INTERNAL PIN CONFIGURATION
DC
SYMBOL
PIN
VOLTAGE
(V)
EQUIVALENT CIRCUIT
V
PDIFLO
1
8
−
−
−
−
−
CC
ICEN
1, 8, 9, 15, 31
PDTX
9
PDRFLO
PDRX
15
31
GND
MBH672
V
CC
IFLOREG
2
2.55
2.65
RFLOREG
24
26
2, 24, 26
GND
MBH673
IFDEC
GND
2.65
0
3, 7, 14,
19, 22,
30, 32
V
CC(IFLO)
IFLOO
4
2.45
3.6
4
GND
MBH674
5, 11, 16,
18, 23, 27
VCC
V
IFLOREG
6
IFLORES
6
2.1
MBH675
GND
1996 Oct 22
13
Philips Semiconductors
Product specification
Image reject 1800 MHz transceiver
for DECT applications
UAA2067G
DC
SYMBOL
PIN
VOLTAGE
(V)
EQUIVALENT CIRCUIT
V
V
CC(MIX)
CC(TX)
10
TXRAMP
10
−
GND
MBH676
V
CC(TX)
TXB
TXA
12
13
VCC
12
13
VCC
GND
MBH677
V
CC(RFLOO)
17
RFLOO
17
3.1
MBH678
GND
V
RFLOREG
RFLOA
RFLOB
20
21
2.0
2.0
20
21
GND
MBH679
1996 Oct 22
14
Philips Semiconductors
Product specification
Image reject 1800 MHz transceiver
for DECT applications
UAA2067G
DC
SYMBOL
PIN
VOLTAGE
(V)
EQUIVALENT CIRCUIT
V
CC(IFLO)
IFO
25
1.1
25
GND
MBH680
V
CC(MIX)
RXA
RXB
28
29
2.4
2.4
28
29
GND
MBH681
1996 Oct 22
15
Philips Semiconductors
Product specification
Image reject 1800 MHz transceiver
for DECT applications
UAA2067G
APPLICATION INFORMATION
GM8C6
a n d u l l p a g e w i d t h
1996 Oct 22
16
Philips Semiconductors
Product specification
Image reject 1800 MHz transceiver
for DECT applications
UAA2067G
Application-indicative values
Measured on the Philips demonstration board, including PCB and balun at Tamb = 25 °C.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP. MAX.
UNIT
RF local oscillator (RFLO section powered-on)
CNRRFLO
carrier-to-noise ratio
∆f = 864 kHz
∆f = 2500 kHz
∆f = 4686 kHz
VTXRAMP = 3 V
−
117
128
134
5
−
−
−
−
−
dBc/Hz
dBc/Hz
dBc/Hz
kHz
−
−
−
−
PULLRFLO
SHIFTRFLO
pulling due to enabling RX or TX
frequency shift due to 200 mV VCC change
5
kHz
IF local oscillator (IFLO section powered-on)
CNRIFLO
carrier-to-noise ratio
∆f = 4686 kHz
−
−
140
−
−
dBc/Hz
dBc
SPURIFLO
spurious signal modulation due to 0.5 mV
(RMS value) on the power supply
∆f = 4686 kHz;
measured at TX
output
−60
PULLIFLO
SHIFTIFLO
pulling due to enabling TX
−
−
1
−
−
kHz
kHz
frequency shift due to 200 mV VCC change
2.5
Transmit mode (transmit, RFLO and IFLO sections powered-on)
PSRRTX
SPURTX
spurious signal modulation due to 0.5 mV
(RMS value) on VCC(MIX), VCC(TX) and
VCC(RFLO) only
∆f = 4686 kHz;
note 1
−
−74
−
dBc
spurious signals
RFLO − 3IFLO
RFLO + 2IFLO
RFLO + 5IFLO
−
−
−
−
−40
−35
−51
135
−
−
−
−
dBc
dBc
dBc
NTX
white noise level at the output
dBc/Hz
Note
1. Including PSRR of the RFLO circuitry.
1996 Oct 22
17
Philips Semiconductors
Product specification
Image reject 1800 MHz transceiver
for DECT applications
UAA2067G
PACKAGE OUTLINE
LQFP32: plastic low profile quad flat package; 32 leads; body 5 x 5 x 1.4 mm
SOT401-1
c
y
X
A
E
17
24
Z
16
25
E
e
A
H
2
E
A
(A )
3
A
1
w M
p
θ
pin 1 index
b
L
p
32
9
L
1
8
detail X
Z
v M
D
A
e
w M
b
p
D
B
H
v M
B
D
0
2.5
scale
5 mm
DIMENSIONS (mm are the original dimensions)
A
(1)
(1)
(1)
(1)
UNIT
A
A
A
b
c
D
E
e
H
D
H
L
L
v
w
y
Z
Z
E
θ
1
2
3
p
E
p
D
max.
7o
0o
0.15 1.5
0.05 1.3
0.27 0.18 5.1
0.17 0.12 4.9
5.1
4.9
7.15 7.15
6.85 6.85
0.75
0.45
0.95 0.95
0.55 0.55
mm
1.60
0.25
0.5
1.0
0.2 0.12 0.1
Note
1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
REFERENCES
OUTLINE
EUROPEAN
PROJECTION
ISSUE DATE
VERSION
IEC
JEDEC
EIAJ
95-12-19
97-08-04
SOT401-1
1996 Oct 22
18
Philips Semiconductors
Product specification
Image reject 1800 MHz transceiver
for DECT applications
UAA2067G
If wave soldering cannot be avoided, the following
conditions must be observed:
SOLDERING
Introduction
• A double-wave (a turbulent wave with high upward
pressure followed by a smooth laminar wave)
soldering technique should be used.
There is no soldering method that is ideal for all IC
packages. Wave soldering is often preferred when
through-hole and surface mounted components are mixed
on one printed-circuit board. However, wave soldering is
not always suitable for surface mounted ICs, or for
printed-circuits with high population densities. In these
situations reflow soldering is often used.
• The footprint must be at an angle of 45° to the board
direction and must incorporate solder thieves
downstream and at the side corners.
Even with these conditions, do not consider wave
soldering LQFP packages LQFP32 (SOT401-1),
LQFP48 (SOT313-2), LQFP64 (SOT314-2) or
LQFP80 (SOT315-1).
This text gives a very brief insight to a complex technology.
A more in-depth account of soldering ICs can be found in
our “IC Package Databook” (order code 9398 652 90011).
During placement and before soldering, the package must
be fixed with a droplet of adhesive. The adhesive can be
applied by screen printing, pin transfer or syringe
dispensing. The package can be soldered after the
adhesive is cured.
Reflow soldering
Reflow soldering techniques are suitable for all LQFP
packages.
Reflow soldering requires solder paste (a suspension of
fine solder particles, flux and binding agent) to be applied
to the printed-circuit board by screen printing, stencilling or
pressure-syringe dispensing before package placement.
Maximum permissible solder temperature is 260 °C, and
maximum duration of package immersion in solder is
10 seconds, if cooled to less than 150 °C within
6 seconds. Typical dwell time is 4 seconds at 250 °C.
Several techniques exist for reflowing; for example,
thermal conduction by heated belt. Dwell times vary
between 50 and 300 seconds depending on heating
method. Typical reflow temperatures range from
215 to 250 °C.
A mildly-activated flux will eliminate the need for removal
of corrosive residues in most applications.
Repairing soldered joints
Fix the component by first soldering two diagonally-
opposite end leads. Use only a low voltage soldering iron
(less than 24 V) applied to the flat part of the lead. Contact
time must be limited to 10 seconds at up to 300 °C. When
using a dedicated tool, all other leads can be soldered in
one operation within 2 to 5 seconds between
270 and 320 °C.
Preheating is necessary to dry the paste and evaporate
the binding agent. Preheating duration: 45 minutes at
45 °C.
Wave soldering
Wave soldering is not recommended for LQFP packages.
This is because of the likelihood of solder bridging due to
closely-spaced leads and the possibility of incomplete
solder penetration in multi-lead devices.
1996 Oct 22
19
Philips Semiconductors
Product specification
Image reject 1800 MHz transceiver
for DECT applications
UAA2067G
DEFINITIONS
Data sheet status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1996 Oct 22
20
Philips Semiconductors
Product specification
Image reject 1800 MHz transceiver
for DECT applications
UAA2067G
NOTES
1996 Oct 22
21
Philips Semiconductors
Product specification
Image reject 1800 MHz transceiver
for DECT applications
UAA2067G
NOTES
1996 Oct 22
22
Philips Semiconductors
Product specification
Image reject 1800 MHz transceiver
for DECT applications
UAA2067G
NOTES
1996 Oct 22
23
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Internet: http://www.semiconductors.philips.com
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© Philips Electronics N.V. 1996
SCA52
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
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under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
647021/1200/02/pp24
Date of release: 1996 Oct 22
Document order number: 9397 750 01437
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The UAA2067G is a low-power transceiver intended for use in portable and base station transceivers complying with the DECT system.
The IC performs in accordance with specifications in the -30 to +85°C temperature range.
PC/PC-peripherals
Cross reference
The UAA2067G contains a front-end receiver for the 1800 to 1900 MHz frequency range, a high-frequency VCO for the 1650 to 1850 MHz
range, a low-frequency VCO for the 100 to 140 MHz frequency range and a transmitter with a high-output power amplifier driver stage for
the 1800 to 1900 MHz frequency range. Designed in an advanced BiCMOS process, it combines high performance with low-power
consumption and a high degree of integration, thus reducing external component costs and total radio size.
Models
Packages
Application notes
Selection guides
Other technical documentation
End of Life information
Datahandbook system
Its first advantage is to provide typically 34 dB of image rejection in the receiver path. Thus, the image filter between the LNA and the mixer
is redundant and consequently can be removed. The receive section consists of a low-noise amplifier that drives a quadrature mixer pair.
Image rejection is achieved by this RF mixer pair and the two phase shifters in the I and Q channels that phase shift the IF by 45° and 135°
respectively. The two phase shifted IFs are recombined and buffered to furnish the IF output signal.
Signals presented at the RF input at LO - IF frequency are rejected through this signal processing while signals at LO + IF frequency can
form the IF signal.
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Its second advantage is to provide a good buffered high-frequency VCO signal to the RX and TX mixers and to the synthesizer-prescaler.
Switching the receive or transmit section on gives a very small change in VCO frequency.
Its third advantage is to provide a good buffered low-frequency VCO signal to the TX mixers, to the synthesizer-prescaler and the second
down conversion mixer in a double conversion receiver. Switching the transmit section on gives a very small change in VCO frequency.
UAA2067G
UAA2067G
The frequency of each VCO is determined by a resonator network that is external to the IC. Each VCO has a regulated power supply
voltage that has been designed specifically for minimizing a change in frequency due to changes in the power supply voltage, which may be
caused for instance by switching on the power amplifier.
Its fourth advantage is to provide typically 33 dBc of image rejection in the single-sideband up-conversion mixer. Thus the image filter
between the power amplifier and the antenna is redundant and may consequently be removed. Image rejection is achieved in the internal
architecture by two RF mixers in quadrature and two phase shifters in the low-frequency VCO signal that shifts the phase to 0° and 90°.
The output signals of the mixers are summed to form the single-upper-sideband output signal.
The output stage is a high-level output buffer with an output power of approximately 4 dBm. The output level is sufficient to drive a three-
stage bipolar preamplifier for DECT.
Features
l Receiver with:
- low noise amplifier
- dual quadrature mixers for image rejection (lower sideband)
- I and Q combining networks at a fixed IF
l Both high-frequency and low-frequency VCOs including buffers with good isolation for low pulling
l Transmitter with:
- dual quadrature mixers for image rejection (lower sideband)
- amplitude ramping circuit
- amplifier with high output power.
Applications
l 1800 MHz transceiver for DECT hand-portable equipment
l TDMA systems.
Datasheet
File
size
(kB)
Publication
release date Datasheet status
Page
count
Type nr.
Title
Datasheet
Download
UAA2067G Image reject 1800 MHz transceiver for 22-Oct-96
DECT applications
Product
Specification
24
148
Products, packages, availability and ordering
North American
Partnumber
Order code
(12nc)
Partnumber
marking/packing
package device status buy online
Standard Marking * Reel Dry Pack,
SMD, 13"
UAA2067G/C1
9352 025 50518
9352 025 50551
SOT401 Full production
SOT401 Full production
-
-
Standard Marking * Tray Dry Pack,
Bakeable, Single
Standard Marking * Tray Dry Pack,
UAA2067GBE
9352 025 50557
SOT401 Full production
Bakeable, Multiple
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number(s) as listed on this page. The similar products page includes products from the same catalog tree(s) , relevant selection guides and
products from the same functional category.
Copyright © 2000
Royal Philips Electronics
All rights reserved.
Terms and conditions.
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