935262597112 [NXP]
IC SPECIALTY TELECOM CIRCUIT, PDSO8, PLASTIC, SOT-96, SO-8, Telecom IC:Other;
| 型号： | 935262597112 |
| 厂家： | 
NXP |
| 描述： | IC SPECIALTY TELECOM CIRCUIT, PDSO8, PLASTIC, SOT-96, SO-8, Telecom IC:Other 电信 光电二极管 电信集成电路 |
| 文件： | 总26页 (文件大小：258K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INTEGRATED CIRCUITS
DATA SHEET
TZA3023
SDH/SONET STM4/OC12
transimpedance amplifier
Product specification
2000 Mar 29
Supersedes data of 1997 Oct 17
File under Integrated Circuits, IC19
Philips Semiconductors
Product specification
SDH/SONET STM4/OC12
transimpedance amplifier
TZA3023
FEATURES
APPLICATIONS
• Wide dynamic input range from 1 µA to 1.5 mA
• Low equivalent input noise of 3.5 pA/√Hz (typical)
• Differential transimpedance of 21 kΩ
• Wide bandwidth from DC to 600 MHz
• Differential outputs
• Digital fibre optic receiver in short, medium and long
haul optical telecommunications transmission systems
or in high-speed data networks
• Wideband RF gain block.
DESCRIPTION
• On-chip Automatic Gain Control (AGC)
• No external components required
• Single supply voltage from 3.0 to 5.5 V
• Bias voltage for PIN diode
The TZA3023 is a low-noise transimpedance amplifier with
AGC designed to be used in STM4/OC12 fibre optic links.
It amplifies the current generated by a photo detector
(PIN diode or avalanche photodiode) and converts it to a
differential output voltage.
• Pin compatible with SA5223.
ORDERING INFORMATION
TYPE
PACKAGE
NUMBER
NAME
DESCRIPTION
VERSION
TZA3023T
TZA3023U
SO8
plastic small outline package; 8 leads; body width 3.9 mm
SOT96-1
−
bare die in waffle pack carriers; die dimensions 1.030 × 1.300 mm
−
BLOCK DIAGRAM
(1)
V
AGC
CC
(13)
peak detector
8 (11, 12)
2
kΩ
GAIN
CONTROL
1 (1)
DREF
IPhoto 3 (4)
7 (10) OUTQ
6 (9) OUT
A1
low noise
amplifier
single-ended to
differential converter
TZA3023
BIASING
2, 4, 5 (2, 3, 5, 6, 7, 8)
GND
MGK918
The numbers in brackets refer to the pad numbers of the bare die version.
(1) AGC analog I/O is only available on the TZA3023U (pad 13).
Fig.1 Block diagram.
2000 Mar 29
2
Philips Semiconductors
Product specification
SDH/SONET STM4/OC12
transimpedance amplifier
TZA3023
PINNING
PIN
PAD
SYMBOL
TYPE
DESCRIPTION
TZA3023T TZA3023U
DREF
1
1
analog output bias voltage for PIN diode; cathode should be connected to
this pin
GND
2
3
2, 3
4
ground
ground
IPhoto
analog input
current input; anode of PIN diode should be connected to this
pin; DC bias level of 800 mV, one diode voltage above ground
GND
GND
OUT
4
5
6
5, 6
7, 8
9
ground
ground
output
ground
ground
data output; pin OUT goes HIGH when current flows into
pin IPhoto
OUTQ
VCC
7
8
−
10
11, 12
13
output
data output; compliment of pin OUT
supply voltage
supply
AGC
input/output
AGC analog I/O
handbook, halfpage
V
DREF
GND
1
2
3
4
8
7
6
5
CC
OUTQ
TZA3023T
OUT
GND
IPhoto
GND
MGK917
Fig.2 Pin configuration.
2000 Mar 29
3
Philips Semiconductors
Product specification
SDH/SONET STM4/OC12
transimpedance amplifier
TZA3023
FUNCTIONAL DESCRIPTION
The AGC loop hold capacitor is integrated on-chip, so an
external capacitor is not needed for AGC. The AGC
voltage can be monitored at pad 13 on the bare die
(TZA3023U). Pad 13 is not bonded in the packaged device
(TZA3023T). This pad can be left unconnected during
normal operation. It can also be used to force an external
AGC voltage. If pad 13 is connected to GND, the internal
AGC loop is disabled and the receiver gain is at a
maximum. The maximum input current is then
approximately 50 µA.
The TZA3023 is a transimpedance amplifier intended for
use in fibre optic links for signal recovery in STM4/OC12
applications. It amplifies the current generated by a photo
detector (PIN diode or avalanche photodiode) and
transforms it into a differential output voltage. The most
important characteristics of the TZA3023 are high receiver
sensitivity and wide dynamic range.
High receiver sensitivity is achieved by minimizing noise in
the transimpedance amplifier. The signal current
generated by a PIN diode can vary between
1 µA to 1.5 mA (p-p). An AGC loop is implemented to
make it possible to handle such a wide dynamic range.
The AGC loop increases the dynamic range of the receiver
by reducing the feedback resistance of the preamplifier.
A differential amplifier converts the single-ended output of
the preamplifier to a differential output voltage (see Fig.3).
V
CC
600 Ω
600 Ω
30 Ω
V
OUTQ
30 Ω
V
OUT
4.5 mA
2 mA
4.5 mA
MGK922
Fig.3 Data output buffer.
CML/PECL OUTPUT
V
CC
V
O(max)
V
OQH
V
OH
V
o (p-p)
V
OQL
V
OO
V
OL
V
O(min)
MGK885
Fig.4 Logic level symbol definitions for data outputs OUT and OUTQ.
4
2000 Mar 29
Philips Semiconductors
Product specification
SDH/SONET STM4/OC12
transimpedance amplifier
TZA3023
PIN diode bias voltage DREF
The reverse voltage across the PIN diode is 4.2 V
(5 − 0.8 V) for 5 V supply or 2.5 V (3.3 − 0.8 V) for 3.3 V
supply.
The transimpedance amplifier together with the PIN diode
determines the performance of an optical receiver for a
large extent. Especially how the PIN diode is connected to
the input and the layout around the input pin influence the
key parameters like sensitivity, bandwidth and the Power
Supply Rejection Ratio (PSRR) of a transimpedance
amplifier. The total capacitance at the input pin is critical to
obtain the highest sensitivity. It should be kept to a
minimum by reducing the capacitor of the PIN diode and
the parasitics around the input pin. The PIN diode should
be placed very close to the IC to reduce the parasitics.
Because the capacitance of the PIN diode depends on the
reverse voltage across it, the reverse voltage should be
chosen as high as possible.
The DC voltage at DREF decreases with increasing signal
levels. Consequently the reverse voltage across the
PIN diode will also decrease with increasing signal levels.
This can be explained with an example. When the
PIN diode delivers a peak-to-peak current of 1 mA, the
average DC current will be 0.5 mA. This DC current is
delivered by VCC through the internal resistor R1 of 2 kΩ
which will cause a voltage drop of 1 V across the resistor
and the reverse voltage across the PIN diode will be
reduced by 1 V.
It is preferable to connect the cathode of the PIN diode to
a higher voltage then VCC when such a voltage source is
available on the board. In this case pin DREF can be left
unconnected. When a negative supply voltage is available,
the configuration in Fig.6 can be used. It should be noted
that in this case the direction of the signal current is
reversed compared to Fig.5. Proper filtering of the bias
voltage for the PIN diode is essential to achieve the
highest sensitivity level.
The PIN diode can be connected to the input in two ways
as shown in Figs 5 and 6. In Fig.5 the PIN diode is
connected between DREF and IPhoto. Pin DREF provides
an easy bias voltage for the PIN diode. The voltage at
DREF is derived from VCC by a low-pass filter. The
low-pass filter consisting of the internal resistor R1, C1 and
the external capacitor C2 rejects the supply voltage noise.
The external capacitor C2 should be equal or larger then
1 nF for a high PSRR.
V
V
CC
CC
8
8
R1
R1
2 kΩ
2 kΩ
DREF
DREF
4
4
C2
1 nF
C1
10 pF
C1
10 pF
I
i
IPhoto
7
7
IPhoto
I
i
TZA3023
TZA3023
MCD900
MCD901
negative supply voltage
Fig.5 The PIN diode connected between the input
and pin DREF.
Fig.6 The PIN diode connected between the input
and a negative supply voltage.
2000 Mar 29
5
Philips Semiconductors
Product specification
SDH/SONET STM4/OC12
transimpedance amplifier
TZA3023
AGC
It is disabled for smaller signals. The transimpedance is
then at its maximum value (21 kΩ differential).
TZA3023 transimpedance amplifier can handle input
currents from 0.5 µA to 1.5 mA. This means a dynamic
range of 72 dB. At low input currents, the transimpedance
must be high to get enough output voltage, and the noise
should be low enough to guaranty minimum bit error rate.
At high input currents however, the transimpedance
should be low to avoid pulse width distortion. This means
that the gain of the amplifier has to vary depending on the
input signal level to handle such a wide dynamic range.
This is achieved in the TZA3023 by implementing an
Automatic Gain Control (AGC) loop.
When the AGC is active, the feedback resistor of the
transimpedance amplifier is reduced to keep the output
voltage constant. The transimpedance is regulated from
21 kΩ at low currents (I < 10 µA) to 800 Ω at high currents
(I < 500 µA). Above 500 µA the transimpedance is at its
minimum and can not be reduced further but the front-end
remains linear until input currents of 1.5 mA.
The upper part of Fig.7 shows the output voltages of the
TZA3023 (OUT and OUTQ) as a function of the DC input
current. In the lower part, the difference of both voltages is
shown. It can be seen from the figure that the output
changes linearly up to 10 µA input current where AGC
becomes active. From this point on, AGC tries to keep the
differential output voltage constant around 200 mV for
medium range input currents (input currents <200 µA).
The AGC can not regulate any more above 600 µA input
current, and the output voltage rises again with the input
current.
The AGC loop consists of a peak detector, a hold capacitor
and a gain control circuit. The peak amplitude of the signal
is detected by the peak detector and it is stored on the hold
capacitor. The voltage over the hold capacitor is compared
to a threshold level. The threshold level is set to
10 µA (p-p) input current. AGC becomes active only for
input signals larger than the threshold level.
MCD914
1.8
V
o
V
OUT
(V)
1.6
1.4
1.2
V
= 3 V
V
CC
OUTQ
1
600
V
o(dif)
(1)
(mV)
400
(2)
(3)
200
0
2
3
4
1
10
10
10
10
I (µA)
i
Vo(dif) = VOUT − VOUTQ
(1) VCC = 3 V.
.
(2) VCC = 3.3 V.
(3) VCC = 5 V.
Fig.7 AGC characteristics.
6
2000 Mar 29
Philips Semiconductors
Product specification
SDH/SONET STM4/OC12
transimpedance amplifier
TZA3023
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
MIN.
−0.5
MAX.
UNIT
VCC
Vn
supply voltage
DC voltage
+6
V
pin 3/pad 4: IPhoto
−0.5
−0.5
−0.5
−0.5
+1
V
V
V
V
pins 6 and 7/pads 9 and 10: OUT and OUTQ
pad 13: AGC (TZA3023U only)
pin 1/pad 1: DREF
V
CC + 0.5
CC + 0.5
V
VCC + 0.5
In
DC current
pin 3/pad 4: IPhoto
−1
+2.5
+15
+0.2
+2.5
300
mA
mA
mA
mA
mW
°C
pins 6 and 7/pads 9 and 10: OUT and OUTQ
pad 13: AGC (TZA3023U only)
pin 1/pad 1: DREF
−15
−0.2
−2.5
−
Ptot
Tstg
Tj
total power dissipation
storage temperature
−65
−
+150
125
junction temperature
°C
Tamb
ambient temperature
−40
+85
°C
HANDLING
Precautions should be taken to avoid damage through electrostatic discharge. This is particularly important during
assembly and handling of the bare die. Additional safety can be obtained by bonding the VCC and GND pads first, the
remaining pads may then be bonded to their external connections in any order.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
VALUE
UNIT
Rth(j-a)
thermal resistance from junction to ambient
160
K/W
2000 Mar 29
7
Philips Semiconductors
Product specification
SDH/SONET STM4/OC12
transimpedance amplifier
TZA3023
CHARACTERISTICS
Typical values at Tamb = 25 °C and VCC = 5 V; minimum and maximum values are valid over the entire ambient
temperature range and supply range; all voltages are measured with respect to ground; unless otherwise specified.
SYMBOL
PARAMETER
supply voltage
CONDITIONS
MIN.
TYP.
MAX.
5.5
UNIT
VCC
ICC
3
5
V
supply current
VCC = 5 V; AC coupled;
23
28
45
mA
RL = 50 Ω
V
CC = 3.3V; AC coupled; 20
28
42
mA
RL = 50 Ω
Ptot
total power dissipation
VCC = 5 V
−
−
140
95
248
152
+125
+85
25
mW
mW
°C
V
CC = 3.3 V
Tj
junction temperature
ambient temperature
−40
−40
17.5
−
Tamb
Rtr
+25
21
°C
differential small-signal
transresistance of the
receiver
VCC = 5 V; AC coupled;
RL = 50 Ω
kΩ
V
CC = 3.3 V; AC coupled; 16
19.5
25
kΩ
RL = 50 Ω
f−3dB(h)
PSRR
high frequency −3 dB point
VCC = 5 V; Ci = 0.7 pF
450
440
580
520
750
600
MHz
MHz
V
CC = 3.3 V; Ci = 0.7 pF
power supply rejection ratio
measured differentially;
note 1
f = 100 kHz to 10 MHz
f = 10 to 100 MHz
−
−
−
1
2
5
2
µA/V
µA/V
µA/V
5
f = 100 MHz to 1 GHz
100
Bias voltage: pin DREF
RDREF resistance between
pins DREF and VCC
DC tested
1680
2000
2320
Ω
Input: pin IPhoto
Vbias(IPhoto) input bias voltage on
pin IPhoto
720
800
970
mV
Ii(IPhoto)(p-p) input current on pin IPhoto
(peak-to-peak value)
VCC = 5 V; note 2
−1500
−1000
−
+4
+4
95
+1500
+1000
−
µA
µA
Ω
V
CC = 3.3 V; note 2
Ri
small-signal input resistance fi = 1 MHz; input current
<2 µA (p-p)
In(tot)
total integrated RMS noise
current over bandwidth
(referenced to input)
note 3
∆f = 311 MHz
−
−
−
55
−
−
−
nA
nA
nA
∆f = 450 MHz
∆f = 622 MHz
80
120
2000 Mar 29
8
Philips Semiconductors
Product specification
SDH/SONET STM4/OC12
transimpedance amplifier
TZA3023
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Data outputs: pins OUT and OUTQ
Vo(cm)
common mode output voltage AC coupled; RL = 50 Ω
VCC − 2
V
CC − 1.7
VCC − 1.4
V
Vo(se)(p-p)
single-ended output voltage
(peak-to-peak value)
AC coupled; RL = 50 Ω;
input current 100 µA (p-p)
75
200
330
+100
62
mV
mV
Ω
VOO
Ro(se)
tr, tf
differential output offset
voltage
−100
40
0
single-ended output
resistance
DC tested
50
rise time, fall time
VCC = 5 V; 20% to 80%;
input current <10 µA (p-p)
400
510
550
700
700
ps
V
CC = 3.3 V;20% to 80%; 450
ps
input current <10 µA (p-p)
Automatic gain control loop: pad AGC
Ith(AGC)
AGC threshold current
referred to the peak input
current; tested at 10 MHz
−
10
−
µA
tatt(AGC)
AGC attack time
−
−
5
−
−
µs
tdecay(AGC) AGC decay time
10
ms
Notes
1. PSRR is defined as the ratio of the equivalent current change at the input (∆IIPhoto) to a change in supply voltage:
∆IIPhoto
PSRR =
-------------------
∆VCC
For example, a + 4 mV disturbance on VCC at 10 MHz will typically add an extra 8 nA to the photodiode current. The
external capacitor between pins DREF and GND has a large impact on the PSRR. The specification is valid with an
external capacitor of 1 nF. The PSSR is guaranteed by design.
2. The Pulse Width Distortion (PWD) is <5% over the whole input current range. The PWD is defined as:
pulse width
PWD =
– 1 × 100% where T is the clock period. The PWD is measured differentially with
-----------------------------
T
PRBS pattern of 10−23
.
3. All In(tot) measurements were made with an input capacitance of Ci = 1.2 pF. This was comprised of 0.7 pF for the
photodiode itself, with 0.3 pF allowed for the printed-circuit board layout and 0.2 pF intrinsic to the package. Noise
performance is measured differentially.
2000 Mar 29
9
Philips Semiconductors
Product specification
SDH/SONET STM4/OC12
transimpedance amplifier
TZA3023
TYPICAL PERFORMANCE CHARACTERISTICS
MCD908
MCD909
40
31.4
handbook, halfpage
handbook, halfpage
I
CC
(mA)
36
I
CC
(mA)
31.0
(2)
(1)
(3)
32
28
30.6
30.2
24
20
−40
0
40
80
120
T (°C)
29.8
3
j
4
5
6
V
(V)
CC
(1) VCC = 5 V.
(2) VCC = 3.3 V.
(3) VCC = 3 V.
Fig.8 Supply current as a function of the junction
temperature.
Fig.9 Supply current as a function of the supply
voltage.
MCD910
MCD911
808
900
handbook, halfpage
handbook, halfpage
V
i
(mV)
V
i
(mV)
806
820
(1)
(3)
(2)
804
802
800
740
660
3
4
5
6
−40
0
40
80
120
V
(V)
T (°C)
CC
j
(1) VCC = 5 V.
(2) VCC = 3.3 V.
(3) VCC = 3 V.
Fig.10 Input voltage as a function of the supply
voltage.
Fig.11 Input voltage as a function of the junction
temperature.
2000 Mar 29
10
Philips Semiconductors
Product specification
SDH/SONET STM4/OC12
transimpedance amplifier
TZA3023
MCD912
MCD913
1.686
1.85
handbook, halfpage
handbook, halfpage
V
o(cm)
(V)
V
o(cm)
(V)
(1)
1.680
1.674
(1)
1.75
(2)
1.65
1.668
(2)
1.662
1.55
3
4
5
6
−40
0
40
80
120
V
(V)
T (°C)
j
CC
VCC = 3.3 V.
(1)
(2)
V
CC − VOUT.
(1)
(2)
V
CC − VOUT
.
VCC − VOUTQ
.
VCC − VOUTQ
.
Fig.12 Common mode voltage at the output as a
function of the supply voltage.
Fig.13 The common mode voltage at the output as
a function of the junction temperature.
2000 Mar 29
11
Philips Semiconductors
Product specification
SDH/SONET STM4/OC12
transimpedance amplifier
TZA3023
APPLICATION AND TEST INFORMATION
10 µH
V
P
22 nF
680 nF
V
CC
8
DREF
IPhoto
1
3
Z
Z
= 50 Ω
= 50 Ω
o
o
100 nF
100 nF
OUTQ
OUT
7
TZA3023T
6
50 Ω
50 Ω
1 nF
2
4
5
GND
GND
GND
MCD898
Fig.14 Application diagram.
2000 Mar 29
12
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w
V
CC
680 nF
(1)
(1)
(1)
22 nF
100 nF
100 nF
61 kΩ
V
RSET
CF
V
V
CCD
V
CC
ref
CCA
8
16
7
15
14
6
10 nF
10 nF
DREF
IPhoto
OUTQ
OUT
DIN
DOUT
1
4
7
13
100 Ω
1 nF
data out
TZA3023T
8 pF
TZA3044
DINQ
DOUTQ
3
2
6
5
5
12
noise filter:
1-pole, 400 MHz
3
1
8
9
10
STQ ST
11
DGND
4
AGND SUB JAM
GND GND GND
16.4 nH
level-detect
status
7.5
pF
1.1
pF
1 kΩ
50 Ω
50 Ω
16.4 nH
V
− 2 V
CC
MCD899
optional noise filter:
3-pole, 470 MHz Bessel
(1) Ferrite bead e.g. Murata BLM10A700S.
Fig.15 STM4/OC12 receiver using the TZA3023T and postamplifier TZA3044.
Philips Semiconductors
Product specification
SDH/SONET STM4/OC12
transimpedance amplifier
TZA3023
Test circuits
Z
= s .(R + Z ) . 2
21
R = 1 kΩ, Z = 100 Ω
i
T
i
NETWORK ANALYZER
S-PARAMETER TEST SET
PORT 1
PORT 2
Z
= 50 Ω
Z
= 50 Ω
o
o
V
CC
23
2
-1 PRBS
100 nF
100 nF
SAMPLING
OSCILLOSCOPE/
TDR/TDT
OUT
PATTERN
GENERATOR
10 nF
1 kΩ
IPhoto
1
2
TR
OUTQ
C
C
D
D
TR
C IN
51 Ω
TZA3023
OM5803
Z
= 50 Ω
o
MCD902
Fig.16 Electrical test circuit.
2000 Mar 29
14
Philips Semiconductors
Product specification
SDH/SONET STM4/OC12
transimpedance amplifier
TZA3023
LIGHTWAVE MULTIMETER
−9.54 dBm
OPTICAL
INPUT
ERROR DETECTOR
Data Clock
OPTICAL ATTENUATOR
0 dBm/1300
in in
IN
OUT
V
CC
90% 10%
22 nF
23
2
-1 PRBS
100 nF
DREF
IPhoto
SAMPLING
OSCILLOSCOPE/
TDR/TDT
PATTERN
GENERATOR
OUT
LASER DRIVER
DIN
TR
OUTQ
C
C
D
D
TR
C IN
1
2
PIN
10 nF
TZA3023 100 nF
DINQ
Laser
TZA3001
OM5802
OM5804
Z
= 50 Ω
o
622.080 MHz
MCD903
Fig.17 Optical test circuit.
2000 Mar 29
15
Philips Semiconductors
Product specification
SDH/SONET STM4/OC12
transimpedance amplifier
TZA3023
MCD904
Fig.18 Differential output with −30 dBm optical input power [input current of 1.63 µA (p-p)].
MCD905
Fig.19 Differential output with −20 dBm optical input power [input current of 16.3 µA (p-p)].
2000 Mar 29
16
Philips Semiconductors
Product specification
SDH/SONET STM4/OC12
transimpedance amplifier
TZA3023
MCD906
Fig.20 Differential output with −10 dBm optical input power [input current of 163 µA (p-p)].
MCD907
Fig.21 Differential output with −2 dBm optical input power [input current of 1030 µA (p-p)].
2000 Mar 29
17
Philips Semiconductors
Product specification
SDH/SONET STM4/OC12
transimpedance amplifier
TZA3023
BONDING PAD LOCATIONS
COORDINATES(1)
SYMBOL
PAD
x
y
DREF
GND
GND
IPhoto
GND
GND
GND
GND
OUT
OUTQ
VCC
1
2
95
95
881
618
473
285
95
11
13
12
3
95
1
DREF
4
95
5
215
360
549
691
785
785
567
424
259
10
9
OUTQ
OUT
1300
TZA3023U
GND
GND
2
3
6
95
µm
7
95
8
95
9
501
641
1055
1055
1055
4
IPhoto
10
11
12
13
5
6
7
8
x
VCC
0
0
AGC
y
1030
Note
MCD897
µm
1. All coordinates are referenced, in µm, to the bottom
left-hand corner of the die.
Fig.22 Bonding pad locations of the TZA3023U.
Physical characteristics of the bare die
PARAMETER
VALUE
Glass passivation
Bonding pad dimension
Metallization
Thickness
2.1 µm PSG (PhosphoSilicate Glass) on top of 0.65 µm oxynitride
minimum dimension of exposed metallization is 90 × 90 µm (pad size = 100 × 100 µm)
1.22 µm W/AlCu/TiW
380 µm nominal
Size
1.03 × 1.30 mm (1.34 mm2)
Backing
silicon; electrically connected to GND potential through substrate contacts
Attach temperature
Attach time
<440 °C; recommended die attach is glue
<15 s
2000 Mar 29
18
Philips Semiconductors
Product specification
SDH/SONET STM4/OC12
transimpedance amplifier
TZA3023
PACKAGE OUTLINE
SO8: plastic small outline package; 8 leads; body width 3.9 mm
SOT96-1
D
E
A
X
v
c
y
H
M
A
E
Z
5
8
Q
A
2
A
(A )
3
A
1
pin 1 index
θ
L
p
L
1
4
e
w
M
detail X
b
p
0
2.5
5 mm
scale
DIMENSIONS (inch dimensions are derived from the original mm dimensions)
A
(1)
(1)
(2)
UNIT
A
A
A
b
c
D
E
e
H
L
L
p
Q
v
w
y
Z
θ
1
2
3
p
E
max.
0.25
0.10
1.45
1.25
0.49
0.36
0.25
0.19
5.0
4.8
4.0
3.8
6.2
5.8
1.0
0.4
0.7
0.6
0.7
0.3
mm
1.27
0.050
1.05
0.041
1.75
0.25
0.01
0.25
0.01
0.25
0.1
8o
0o
0.010 0.057
0.004 0.049
0.019 0.0100 0.20
0.014 0.0075 0.19
0.16
0.15
0.244
0.228
0.039 0.028
0.016 0.024
0.028
0.012
inches 0.069
0.01 0.004
Notes
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
2. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
REFERENCES
OUTLINE
EUROPEAN
PROJECTION
ISSUE DATE
VERSION
IEC
JEDEC
EIAJ
97-05-22
99-12-27
SOT96-1
076E03
MS-012
2000 Mar 29
19
Philips Semiconductors
Product specification
SDH/SONET STM4/OC12
transimpedance amplifier
TZA3023
SOLDERING
If wave soldering is used the following conditions must be
observed for optimal results:
Introduction to soldering surface mount packages
• Use a double-wave soldering method comprising a
turbulent wave with high upward pressure followed by a
smooth laminar wave.
This text gives a very brief insight to a complex technology.
A more in-depth account of soldering ICs can be found in
our “Data Handbook IC26; Integrated Circuit Packages”
(document order number 9398 652 90011).
• For packages with leads on two sides and a pitch (e):
– larger than or equal to 1.27 mm, the footprint
longitudinal axis is preferred to be parallel to the
transport direction of the printed-circuit board;
There is no soldering method that is ideal for all surface
mount IC packages. Wave soldering is not always suitable
for surface mount ICs, or for printed-circuit boards with
high population densities. In these situations reflow
soldering is often used.
– smaller than 1.27 mm, the footprint longitudinal axis
must be parallel to the transport direction of the
printed-circuit board.
Reflow soldering
The footprint must incorporate solder thieves at the
downstream end.
Reflow soldering requires solder paste (a suspension of
fine solder particles, flux and binding agent) to be applied
to the printed-circuit board by screen printing, stencilling or
pressure-syringe dispensing before package placement.
• For packages with leads on four sides, the footprint must
be placed at a 45° angle to the transport direction of the
printed-circuit board. The footprint must incorporate
solder thieves downstream and at the side corners.
Several methods exist for reflowing; for example,
infrared/convection heating in a conveyor type oven.
Throughput times (preheating, soldering and cooling) vary
between 100 and 200 seconds depending on heating
method.
During placement and before soldering, the package must
be fixed with a droplet of adhesive. The adhesive can be
applied by screen printing, pin transfer or syringe
dispensing. The package can be soldered after the
adhesive is cured.
Typical reflow peak temperatures range from
215 to 250 °C. The top-surface temperature of the
packages should preferable be kept below 230 °C.
Typical dwell time is 4 seconds at 250 °C.
A mildly-activated flux will eliminate the need for removal
of corrosive residues in most applications.
Wave soldering
Manual soldering
Conventional single wave soldering is not recommended
for surface mount devices (SMDs) or printed-circuit boards
with a high component density, as solder bridging and
non-wetting can present major problems.
Fix the component by first soldering two
diagonally-opposite end leads. Use a low voltage (24 V or
less) soldering iron applied to the flat part of the lead.
Contact time must be limited to 10 seconds at up to
300 °C.
To overcome these problems the double-wave soldering
method was specifically developed.
When using a dedicated tool, all other leads can be
soldered in one operation within 2 to 5 seconds between
270 and 320 °C.
2000 Mar 29
20
Philips Semiconductors
Product specification
SDH/SONET STM4/OC12
transimpedance amplifier
TZA3023
Suitability of surface mount IC packages for wave and reflow soldering methods
SOLDERING METHOD
PACKAGE
BGA, LFBGA, SQFP, TFBGA
WAVE
not suitable
REFLOW(1)
suitable
HBCC, HLQFP, HSQFP, HSOP, HTQFP, HTSSOP, SMS
PLCC(3), SO, SOJ
not suitable(2)
suitable
suitable
suitable
LQFP, QFP, TQFP
not recommended(3)(4) suitable
not recommended(5)
suitable
SSOP, TSSOP, VSO
Notes
1. All surface mount (SMD) packages are moisture sensitive. Depending upon the moisture content, the maximum
temperature (with respect to time) and body size of the package, there is a risk that internal or external package
cracks may occur due to vaporization of the moisture in them (the so called popcorn effect). For details, refer to the
Drypack information in the “Data Handbook IC26; Integrated Circuit Packages; Section: Packing Methods”.
2. These packages are not suitable for wave soldering as a solder joint between the printed-circuit board and heatsink
(at bottom version) can not be achieved, and as solder may stick to the heatsink (on top version).
3. If wave soldering is considered, then the package must be placed at a 45° angle to the solder wave direction.
The package footprint must incorporate solder thieves downstream and at the side corners.
4. Wave soldering is only suitable for LQFP, TQFP and QFP packages with a pitch (e) equal to or larger than 0.8 mm;
it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.65 mm.
5. Wave soldering is only suitable for SSOP and TSSOP packages with a pitch (e) equal to or larger than 0.65 mm; it is
definitely not suitable for packages with a pitch (e) equal to or smaller than 0.5 mm.
2000 Mar 29
21
Philips Semiconductors
Product specification
SDH/SONET STM4/OC12
transimpedance amplifier
TZA3023
DATA SHEET STATUS
PRODUCT
DATA SHEET STATUS
STATUS
DEFINITIONS (1)
Objective specification
Development This data sheet contains the design target or goal specifications for
product development. Specification may change in any manner without
notice.
Preliminary specification Qualification
This data sheet contains preliminary data, and supplementary data will be
published at a later date. Philips Semiconductors reserves the right to
make changes at any time without notice in order to improve design and
supply the best possible product.
Product specification
Production
This data sheet contains final specifications. Philips Semiconductors
reserves the right to make changes at any time without notice in order to
improve design and supply the best possible product.
Note
1. Please consult the most recently issued data sheet before initiating or completing a design.
DEFINITIONS
Right to make changes
Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
the use of any of these products, conveys no licence or title
under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.
Short-form specification
The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Limiting values definition Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
BARE DIE DISCLAIMER
All die are tested and are guaranteed to comply with all
data sheet limits up to the point of wafer sawing for a
period of ninety (90) days from the date of Philips' delivery.
If there are data sheet limits not guaranteed, these will be
separately indicated in the data sheet. There are no post
packing tests performed on individual die or wafer. Philips
Semiconductors has no control of third party procedures in
the sawing, handling, packing or assembly of the die.
Accordingly, Philips Semiconductors assumes no liability
for device functionality or performance of the die or
systems after third party sawing, handling, packing or
assembly of the die. It is the responsibility of the customer
to test and qualify their application in which the die is used.
Application information
Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
DISCLAIMERS
Life support applications
These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
2000 Mar 29
22
Philips Semiconductors
Product specification
SDH/SONET STM4/OC12
transimpedance amplifier
TZA3023
NOTES
2000 Mar 29
23
Philips Semiconductors – a worldwide company
Argentina: see South America
Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB,
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Slovenia: see Italy
Denmark: Sydhavnsgade 23, 1780 COPENHAGEN V,
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Tel. +41 1 488 2741 Fax. +41 1 488 3263
Indonesia: PT Philips Development Corporation, Semiconductors Division,
Gedung Philips, Jl. Buncit Raya Kav.99-100, JAKARTA 12510,
Tel. +62 21 794 0040 ext. 2501, Fax. +62 21 794 0080
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TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007
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ISTANBUL, Tel. +90 216 522 1500, Fax. +90 216 522 1813
Italy: PHILIPS SEMICONDUCTORS, Via Casati, 23 - 20052 MONZA (MI),
Tel. +39 039 203 6838, Fax +39 039 203 6800
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252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461
Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku,
TOKYO 108-8507, Tel. +81 3 3740 5130, Fax. +81 3 3740 5057
United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,
MIDDLESEX UB3 5BX, Tel. +44 208 730 5000, Fax. +44 208 754 8421
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Tel. +1 800 234 7381, Fax. +1 800 943 0087
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Tel. +60 3 750 5214, Fax. +60 3 757 4880
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Tel. +9-5 800 234 7381, Fax +9-5 800 943 0087
Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,
Middle East: see Italy
Tel. +381 11 3341 299, Fax.+381 11 3342 553
For all other countries apply to: Philips Semiconductors,
Internet: http://www.semiconductors.philips.com
International Marketing & Sales Communications, Building BE-p, P.O. Box 218,
5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825
69
SCA
© Philips Electronics N.V. 2000
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
403510/200/02/pp24
Date of release: 2000 Mar 29
Document order number: 9397 750 06816
Go to Philips Semiconductors' home page
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The TZA3023 is a low-noise transimpedance amplifier with AGC designed to be used in STM4/OC12 fibre optic links. It amplifies the
current generated by a photo detector (PIN diode or avalanche photodiode) and converts it to a differential output voltage.
PC/PC-peripherals
Cross reference
Models
Features
Packages
Application notes
Selection guides
Other technical documentation
End of Life information
Datahandbook system
l Wide dynamic input range from 1 µA to 1.5 mA
l Low equivalent input noise of 3.5 pA/W
l Wide bandwidth from DC to 600 MHz
l Differential outputs
l On-chip Automatic Gain Control (AGC)
l No external components required
l Single supply voltage from 3.0 to 5.5 V
l Bias voltage for PIN diode
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l Pin compatible with SA5223.
Applications
TZA3023
TZA3023
l Digital fibre optic receiver in short, medium and long haul optical telecommunications transmission systems or in high-speed data
networks
l Wideband RF gain block.
Datasheet
File
size
(kB)
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release date Datasheet status
Page
count
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Datasheet
Download
TZA3023 SDH/SONET STM4/OC12
transimpedance amplifier
29-Mar-00
Product
Specification
24
191
Products, packages, availability and ordering
North American
Partnumber
Order code
(12nc)
Partnumber
marking/packing
package device status buy online
SOT96 Full production
TZA3023T/C3
TZA3023U/C3
TZA3023TD
9352 625 97112 Standard Marking * Tube
9352 625 98026 No Marking * Die In Waffle Carriers NONE Full production
-
No Marking * Chips on Wafer, Un-
Sawn, Electrical Tested
TZA3023U/T/C3
9352 633 76025
NONE Full production
-
Please read information about some discontinued variants of this product.
Find similar products:
TZA3023 links to the similar products page containing an overview of products that are similar in function or related to the part
number(s) as listed on this page. The similar products page includes products from the same catalog tree(s) , relevant selection guides and
products from the same functional category.
Copyright © 2000
Royal Philips Electronics
All rights reserved.
Terms and conditions.
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