935313779528 [NXP]
Wide Band High Power Amplifier;
| 型号： | 935313779528 |
| 厂家： | 
NXP |
| 描述： | Wide Band High Power Amplifier 高功率电源 射频 微波 |
| 文件： | 总14页 (文件大小：443K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Document Number: MW5IC970N
Rev. 3, 1/2010
Freescale Semiconductor
Technical Data
RF LDMOS Wideband 2-Stage
Power Amplifiers
Designed for broadband commercial and industrial applications with
frequencies from 132 MHz to 960 MHz. The high gain and broadband
performance of these devices make them ideal for large- signal, common- source
amplifier applications in 28 volt base station equipment. These devices have a
2-stage design with off-chip matching for the input, interstage and output
networks to cover the desired frequency band.
MW5IC970NBR1
MW5IC970GNBR1
800-900 MHz, 70 W,ꢀ28 V
RF LDMOS WIDEBAND
2-STAGE POWER AMPLIFIERS
• Typical Performance: 800 MHz, 28 Volts, IDQ1 = 80 mA,
IDQ2 = 650 mA, Pout = 70 Watts PEP
Power Gain — 30 dB
Drain Efficiency — 48%
• Capable of Handling 10:1 VSWR, @ 28 Vdc, 850 MHz, 70 Watts CW
Output Power
Features
CASE 1329-09
TO-272 WB-16
PLASTIC
• Characterized with Series Equivalent Large-Signal Impedance Parameters
• Integrated Quiescent Current Temperature Compensation
with Enable/Disable Function
MW5IC970NBR1
• On-Chip Current Mirror gm Reference FET for Self Biasing Application (1)
• Integrated ESD Protection
• 200°C Capable Plastic Package
• RoHS Compliant
• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
CASE 1329A-04
TO-272 WB-16 GULL
PLASTIC
MW5IC970GNBR1
V
RD2
GND
V
1
2
3
4
5
GND
NC
16
15
Quiescent Current
Temperature Compensation
V
V
/V
RD2
RG2 GS2
(1)
V
V
/V
RG2 GS2
/V
RG1 GS1
RF
in1
/V
RG1 GS1
V
D2/
RF
GND
6
14
out2
V
RD1
/RF
7
8
9
10
RF
V
D2
/RF
V
V
in1
out2
D1
out1
/RF
out1
D1
13
12
NC
GND
V
RD1
RF
in2
GND
11
V
V
/RF
/RF
D1
out1
(Top View)
D1
out1
RF
in2
Note: Exposed backside flag is source
terminal for transistors.
Figure 1. Functional Block Diagram
Figure 2. Pin Connections
ꢀꢁ1. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987, Quiescent Current Control
for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1977 or AN1987.
© Freescale Semiconductor, Inc., 2006, 2008, 2010. All rights reserved.
Table 1. Maximum Ratings
Rating
Symbol
Value
-ꢂ0.5, +ꢂ65
-ꢂ0.5, +ꢂ15
-ꢂ65 to +150
150
Unit
Vdc
Vdc
°C
Drain-Source Voltage
V
DSS
Gate-Source Voltage
V
GS
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
T
stg
T
°C
C
T
200
°C
J
Table 2. Thermal Characteristics
(1)
Characteristic
Thermal Resistance, Junction to Case
Symbol
Value
Unit
R
θ
JC
°C/W
Final Application
(P = 70 W CW)
Stage 1, 28 Vdc, I = 80 mA
DQ
5.2
0.8
Stage 2, 28 Vdc, I = 650 mA
DQ
out
EDGE Application
(P = 35 W CW)
Stage 1, 28 Vdc, I = 80 mA
DQ
5.3
0.8
Stage 2, 28 Vdc, I = 650 mA
DQ
out
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22-A114)
Machine Model (per EIA/JESD22-A115)
Charge Device Model (per JESD22-C101)
1A (Minimum)
A (Minimum)
IV (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD22-A113, IPC/JEDEC J-STD-020
3
260
°C
Table 5. Electrical Characteristics (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
Functional Tests (In Freescale Test Fixture, 50 ohm system) V = 28.5 Vdc, I
DD
= 80 mA, I
= 650 mA, P = 70 W PEP,
out
DQ1
DQ2
f1 = 870.0 MHz, f2 = 870.1 MHz
Power Gain
G
26.5
40
30
48
34.5
—
dB
%
ps
Drain Efficiency
η
D
Input Return Loss
Intermodulation Distortion
IRL
—
-12
-33
-10
-28
dB
dBc
IMD
—
Typical 800/900 MHz Performances (In Freescale 800/900 MHz Reference Fixture, 50 ohm system) V = 28 Vdc, I
DD
= 80 mA, I
=
DQ1
DQ2
650 mA, 740-870 MHz, 870-960 MHz
Gain Flatness in 30 MHz Bandwidth @ P = 70 W CW
out
G
G
—
—
2
—
—
dB
dB
F
F
Gain Flatness in 30 MHz Instantaneous Bandwidth
@ P = 70 W CW
0.2
out
Delay @ P = 70 W CW Including Output Matching
out
Delay
—
—
4.5
15
—
—
ns
Part-to-Part Phase Variation @ P = 70 W CW
out
ΔΦ
°
ꢀꢁ1. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
MW5IC970NBR1 MW5IC970GNBR1
RF Device Data
Freescale Semiconductor
2
V
BIAS
V
D2
R6
R5
F1
R4
R3
R8
R7
R2
C8 C9
1
2
16
15
C18
C17
C16
NC
Quiescent Current
Temperature
Compensation
V
G2R2
R1
3
4
5
C15
Z2
V
G1R1
RF
INPUT
Z6
Z5
Z1
Z3
RF
OUTPUT
C7
C10
Z8
C12
C13
Z7
Z9
C2
6
14
C1
C6
C11
7
8
Z10
Z11
C14
9
C5
NC
10
11
13
12
Z4
C3
C4
F2
V
D1
Z1
0.485″ x 0.066″ Microstrip
0.270″ x 0.040″ Microstrip
0.068″ x 0.020″ Microstrip
0.950″ x 0.040″ Microstrip
0.131″ x 0.233″ Microstrip
0.797″ x 0.050″ Microstrip
Z7
Z8
Z9
0.040″ x 0.233″ Microstrip
0.450″ x 0.120″ Microstrip
0.100″ x 0.066″ Microstrip
1.000″ x 0.040″ Microstrip
0.148″ x 0.040″ Microstrip
Z2
Z3
Z4
Z5
Z6
Z10
Z11
PCB
Rogers 4350B, 0.030″, ε = 3.5
r
Figure 3. MW5IC970NBR1(GNBR1) Test Circuit Schematic
Table 6. MW5IC970NBR1(GNBR1) Test Circuit Component Designations and Values
Part
C1, C10, C11
Description
3.9 pF Chip Capacitors
56 pF Chip Capacitor
Part Number
ATC600S3R9BT250T
ATC600S560JT250T
GRM40001C0G390J050BD
ECJ4YF1H106Z
Manufacturer
ATC
C2
ATC
C3, C8, C14, C15, C17
39 pF Chip Capacitors
10 μF Chip Capacitors
24 pF Chip Capacitor
Murata
C4, C9
Panasonic
ATC
C5
ATC600F240JT250T
ATC600F150JT250T
ATC600F4R7BT250T
ATC600F0R4BT250T
GRM400X7R153J050BD
1FT5A
C6, C7
15 pF Chip Capacitors
4.7 pF Chip Capacitor
ATC
C12
ATC
C13
0.4 pF Chip Capacitor
ATC
C16, C18, C19, C20
0.015 μF Chip Capacitors
5A Surface Mount Fuse
1A Surface Mount Fuse
681 Ω, 1/8 W Chip Resistors
4.75 kΩ, 1/8 W Chip Resistors
1.21 kΩ, 1/8 W Chip Resistors
267 Ω, 1/8 W Chip Resistor
Murata
Little Fuse
Little Fuse
Vishay
Vishay
Vishay
Vishay
F1
F2
1FT1A
R1, R7
R2, R5
R3, R4, R8
R6
CRCW08056810FKEA
CRCW08054751FKEA
CRCW08051211FKEA
CRCW08052670FKEA
MW5IC970NBR1 MW5IC970GNBR1
RF Device Data
Freescale Semiconductor
3
V
D2
F1
V
V
G2
C9
R6
G1
C8
R8
R7
R4
R3
R5
C18
C17
R2
R1
C16
C15
C11
C10
C13
C12
C7
C2
C6
C
C1
C5
C14
C3
C4
MW5IC970
Rev. 1
V
D1
F2
Figure 4. MW5IC970NBR1(GNBR1) Test Circuit Component Layout
MW5IC970NBR1 MW5IC970GNBR1
RF Device Data
Freescale Semiconductor
4
TYPICAL CHARACTERISTICS
60
40
20
60
40
20
PAE
G
ps
V
DD
= 28.5 Vdc, P = 35 W (Avg.)
out
I
DQ1
100 kHz Tone Spacing
= 80 mA, I
= 650 mA
DQ2
0
-2 0
-40
0
IRL
-20
-40
IMD
920
800
820
840
860
880
900
940
960
f, FREQUENCY (MHz)
Figure 5. Two-Tone Wideband Performance
@ Pout = 35 Watts (Avg.)
-1 0
32
31
30
29
V
= 28.5 Vdc
= 80 mA, I
DD
I
= 975 mA
DQ2
I
= 650 mA
DQ1
DQ2
-2 0
-3 0
-4 0
-5 0
f1 = 870 MHz, f2 = 870.1 MHz
Two-Tone Measurements
100 kHz Tone Spacing
812 mA
650 mA
3rd Order
488 mA
325 mA
5th Order
7th Order
V
= 28.5 Vdc, I
= 80 mA
DD
DQ1
28
27
f1 = 870 MHz, f2 = 870.1 MHz
Two-Tone Measurements
100 kHz Tone Spacing
-6 0
-70
1
10
, OUTPUT POWER (WATTS) PEP
100
300
1
10
100
200
P
out
P
out
, OUTPUT POWER (WATTS) PEP
Figure 6. Two-Tone Power Gain versus
Output Power
Figure 7. Intermodulation Distortion Products
versus Output Power
-2 0
-2 5
-3 0
-3 5
34
32
30
28
26
24
70
V
I
= 28.5 Vdc, I
= 80 mA
V
I
= 28.5 Vdc, P = 35 W (PEP)
out
-30 _C
DD
DQ1
= 650 mA, f = 870 MHz
DD
= 80 mA, I
= 650 mA
60
50
DQ2
DQ1
DQ2
25_C
85_C
Two-Tone Measurements
(f1 + f2)/2 = Center Frequency of 870 MHz
-30 _C
G
ps
3rd Order
T
= 25_C
C
40
30
20
10
0
5th Order
85_C
-4 0
-4 5
-5 0
-55
7th Order
PAE
22
20
0.1
1
10
100 200
0.1
1
10
100
1000
TWO-T ONE SPACING (MHz)
P , OUTPUT POWER (WATTS) CW
out
Figure 8. Intermodulation Distortion Products
versus Tone Spacing
Figure 9. Power Gain and Power Added
Efficiency versus CW Output Power
MW5IC970NBR1 MW5IC970GNBR1
RF Device Data
Freescale Semiconductor
5
TYPICAL CHARACTERISTICS
32
31
I
I
= 80 mA
= 650 mA
DQ1
DQ2
f = 870 MHz
30
29
16 V
28
27
32 V
24 V
80
28.5 V
100
20 V
60
V
DD
= 12 V
0
20
40
120
140
P , OUTPUT POWER (WATTS) CW
out
Figure 10. Power Gain versus Output Power
MW5IC970NBR1 MW5IC970GNBR1
RF Device Data
Freescale Semiconductor
6
PACKAGE DIMENSIONS
MW5IC970NBR1 MW5IC970GNBR1
RF Device Data
Freescale Semiconductor
7
MW5IC970NBR1 MW5IC970GNBR1
RF Device Data
Freescale Semiconductor
8
MW5IC970NBR1 MW5IC970GNBR1
RF Device Data
Freescale Semiconductor
9
MW5IC970NBR1 MW5IC970GNBR1
RF Device Data
Freescale Semiconductor
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MW5IC970NBR1 MW5IC970GNBR1
RF Device Data
Freescale Semiconductor
11
MW5IC970NBR1 MW5IC970GNBR1
RF Device Data
Freescale Semiconductor
12
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process.
Application Notes
• AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
• AN1977: Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family
• AN1987: Quiescent Current Control for the RF Integrated Circuit Device Family
• AN3263: Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over-Molded Plastic Packages
• AN3789: Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
2
Apr. 2008
•
Document Number changed from MW5IC970NBR1 to MW5IC970N with the addition of the
MW5IC970GNBR1 part number. Revision history sequencing maintained from first release of data
sheet, p. 1
•
•
Added Case Operating Temperature limit to the Maximum Ratings table and set limit to 150°C, p. 2
Updated Part Numbers in Table 6, Component Designations and Values, to RoHS compliant part
numbers, p. 3
•
Replaced Case Outline 1329-09, Issue L, with 1329-09, Issue M, p. 1, 7-9. Added pin numbers 1
through 17.
•
•
Added Case Outline 1329A-04, Issue F, p. 1, 10-12
Added Product Documentation and Revision History, p. 13
3
Jan. 2010
•
Changed Storage Temperature Range in Max Ratings table from -65 to +200 to -65 to +150 for
standardization across products, p. 2
MW5IC970NBR1 MW5IC970GNBR1
RF Device Data
Freescale Semiconductor
13
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ꢀ Freescale Semiconductor, Inc. 2006, 2008, 2010. All rights reserved.
LDCForFreescaleSemiconductor@hibbertgroup.com
Document Number: MW5IC970N
Rev. 3, 1/2010
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