935318726528 [NXP]
RF Power Field-Effect Transistor;
| 型号： | 935318726528 |
| 厂家： | 
NXP |
| 描述： | RF Power Field-Effect Transistor |
| 文件： | 总15页 (文件大小：437K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Document Number: A2T09D400--23N
Rev. 0, 3/2016
Freescale Semiconductor
Technical Data
RF Power LDMOS Transistor
N--Channel Enhancement--Mode Lateral MOSFET
This 93 W symmetrical Doherty RF power LDMOS transistor is designed for
cellular base station applications covering the frequency range of 716 to
960 MHz.
A2T09D400--23NR6
800 MHz
716–960 MHz, 93 W AVG., 28 V
AIRFAST RF POWER LDMOS
TRANSISTOR
Typical Doherty Single--Carrier W--CDMA Performance: VDD = 28 Vdc,
IDQA = 1200 mA, VGSB = 1.12 Vdc, Pout = 93 W Avg., Input Signal
PAR = 9.9 dB @ 0.01% Probability on CCDF.
G
Output PAR
(dB)
ACPR
(dBc)
ps
D
Frequency
776 MHz
806 MHz
836 MHz
(dB)
17.8
18.2
17.9
(%)
45.9
46.8
48.0
7.0
7.2
7.1
–36.8
–37.8
–37.1
Features
OM--1230--4L2S
PLASTIC
Production Tested in a Symmetrical Doherty Configuration
Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
(1)
Designed for Digital Predistortion Error Correction Systems
6
5
VBW
A
Carrier
RF /V
1
2
RF /V
outA DSA
inA GSA
RF /V
inB GSB
RF /V
outB DSB
4
3
Peaking
(1)
VBW
B
(Top View)
Note: Exposed backside of the package is
the source terminal for the transistors.
Figure 1. Pin Connections
1. Device cannot operate with V current
DD
supplied through pin 3 and pin 6.
Freescale Semiconductor, Inc., 2016. All rights reserved.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Vdc
Vdc
Vdc
C
Drain--Source Voltage
V
–0.5, +70
–6.0, +10
32, +0
DSS
Gate--Source Voltage
V
GS
DD
Operating Voltage
V
Storage Temperature Range
Case Operating Temperature Range
T
stg
–65 to +150
–40 to +150
–40 to +225
T
C
C
(1,2)
Operating Junction Temperature Range
T
J
C
Table 2. Thermal Characteristics
(2,3)
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Case
R
0.29
C/W
JC
Case Temperature 78C, 93 W Avg., W--CDMA, 28 Vdc, I
= 1200 mA, V
= 1.12 Vdc,
DQA
GSB
806 MHz
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
Machine Model (per EIA/JESD22--A115)
Charge Device Model (per JESD22--C101)
2
B
IV
Table 4. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD22--A113, IPC/JEDEC J--STD--020
3
260
C
Table 5. Electrical Characteristics (T = 25C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
(4)
Off Characteristics
Zero Gate Voltage Drain Leakage Current
I
I
—
—
—
—
—
—
10
1
Adc
Adc
Adc
DSS
DSS
GSS
(V = 70 Vdc, V = 0 Vdc)
DS
GS
Zero Gate Voltage Drain Leakage Current
(V = 32 Vdc, V = 0 Vdc)
DS
GS
Gate--Source Leakage Current
(V = 5 Vdc, V = 0 Vdc)
I
1
GS
DS
(4)
On Characteristics -- Side A
Gate Threshold Voltage
V
1.0
1.5
0.1
1.5
2.2
2.0
2.5
0.3
Vdc
Vdc
Vdc
GS(th)
(V = 10 Vdc, I = 270 Adc)
DS
D
Gate Quiescent Voltage
(V = 28 Vdc, I = 1200 mAdc, Measured in Functional Test)
V
GSA(Q)
DD
D
Drain--Source On--Voltage
(V = 10 Vdc, I = 2.7 Adc)
V
0.14
DS(on)
GS
D
(4)
On Characteristics -- Side B
Gate Threshold Voltage
V
1.0
1.5
2.0
0.3
Vdc
Vdc
GS(th)
(V = 10 Vdc, I = 270 Adc)
DS
D
Drain--Source On--Voltage
(V = 10 Vdc, I = 2.7 Adc)
V
0.05
0.14
DS(on)
GS
D
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.nxp.com/RF/calculators.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.nxp.com/RF and search for AN1955.
4. Each side of device measured separately.
(continued)
A2T09D400--23NR6
RF Device Data
Freescale Semiconductor, Inc.
2
Table 5. Electrical Characteristics (T = 25C unless otherwise noted) (continued)
A
Characteristic
Symbol
Min
Typ
= 1200 mA, V = 1.12 Vdc,
GSB
Max
Unit
(1,2)
Functional Tests – 776 MHz
(In Freescale Doherty Test Fixture, 50 ohm system) V = 28 Vdc, I
DD
DQA
P
= 93 W Avg., f = 776 MHz, Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
out
ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset.
Power Gain
G
16.5
43.5
6.8
17.8
45.9
7.0
19.0
—
dB
ps
D
Drain Efficiency
%
dB
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF
PAR
—
Adjacent Channel Power Ratio
ACPR
—
–36.8
–34.7
dBc
(1,2)
Functional Tests – 836 MHz
(In Freescale Doherty Test Fixture, 50 ohm system) V = 28 Vdc, I
= 1200 mA, V = 1.12 Vdc,
GSB
DD
DQA
P
= 93 W Avg., f = 836 MHz, Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
out
ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset.
Power Gain
G
16.5
43.5
6.8
17.9
48.0
7.1
19.0
—
dB
%
ps
D
Drain Efficiency
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF
PAR
—
dB
dBc
Adjacent Channel Power Ratio
ACPR
—
–37.1
–34.7
(2)
Load Mismatch
(In Freescale Doherty Test Fixture, 50 ohm system) I
= 1200 mA, V
= 1.12 Vdc, f = 806 MHz, 12 sec(on),
GSB
DQA
10% Duty Cycle
VSWR 10:1 at 32 Vdc, 497 W Pulsed CW Output Power
(3 dB Input Overdrive from 400 W Pulsed CW Rated Power)
No Device Degradation
(2)
Typical Performance
(In Freescale Doherty Test Fixture, 50 ohm system) V = 28 Vdc, I
= 1200 mA, V = 1.12 Vdc,
GSB
DD
DQA
776–836 MHz Bandwidth
P
P
@ 1 dB Compression Point, CW
P1dB
P3dB
—
—
—
400
540
–7.1
—
—
—
W
W
out
out
(3)
@ 3 dB Compression Point
AM/PM
(Maximum value measured at the P3dB compression point across
the 776–836 MHz bandwidth)
VBW Resonance Point
VBW
—
35
—
MHz
res
(IMD Third Order Intermodulation Inflection Point)
Gain Flatness in 60 MHz Bandwidth @ P = 93 W Avg.
G
—
—
0.3
—
—
dB
out
F
Gain Variation over Temperature
G
0.01
dB/C
(--30C to +85C)
Output Power Variation over Temperature
P1dB
—
0.01
—
dB/C
(--30C to +85C)
Table 6. Ordering Information
Device
Tape and Reel Information
Package
A2T09D400--23NR6
R6 Suffix = 150 Units, 56 mm Tape Width, 13--inch Reel
OM--1230--4L2S
1. Part internally matched both on input and output.
2. Measurements made with device in an asymmetrical Doherty configuration.
3. P3dB = P
+ 7.0 dB where P
is the average output power measured using an unclipped W--CDMA single--carrier input signal where
avg
avg
output PAR is compressed to 7.0 dB @ 0.01% probability on CCDF.
A2T09D400--23NR6
RF Device Data
Freescale Semiconductor, Inc.
3
C16
V
C13
GGA
C2
C15
C1
C11
R2
D76131
C3
C26
C
P
R1
Z1
C18
C19
C4
C6
C5
C17
C20
C25
C7
C8
C21 C27
C22
A2T09D400--24N
Rev. 2
R3
C12
C10
C23
C9
C14
V
C24
GGB
Figure 2. A2T09D400--23NR6 Test Circuit Component Layout
Table 7. A2T09D400--23NR6 Test Circuit Component Designations and Values
Part
Description
10 F Chip Capacitors
Part Number
Manufacturer
Murata
C1, C10
GRM32ER61H106KA12L
C2, C3, C6, C9, C15, C23
68 pF Chip Capacitors
4.7 pF Chip Capacitors
6.2 pF Chip Capacitors
10 F Chip Capacitors
470 F, 63 V Electrolytic Capacitors
1.8 pF Chip Capacitor
8.2 pF Chip Capacitor
12 pF Chip Capacitor
ATC600F680R0BT250XT
ATC600F4R7BT250XT
ATC600F6R2BT250XT
C5750X7S2A106M230KB
ATC
C4, C7, C21
ATC
C5, C8
ATC
C11, C12, C16, C24
TDK
C13, C14
C17
MCGPR63V477M13X26-RH
ATC600F1R8BT250XT
ATC600F8R2BT250XT
ATC600F120BT250XT
ATC600F0R5BT250XT
ATC600F150BT250XT
ATC600F2R4BT250XT
ATC600F270BT250XT
CW12010T0050GBK
Multicomp
ATC
C18
ATC
C19
ATC
C20
0.5 pF Chip Capacitor
15 pF Chip Capacitor
ATC
C22
ATC
C25
2.4 pF Chip Capacitor
27 pF Chip Capacitors
50 , 10 W Chip Resistor
12 , 1/4 W Chip Resistors
ATC
C26, C27
R1
ATC
ATC
R2, R3
Z1
CRCW120612R0FKEA
Vishay
Anaren
MTL
600–900 MHz Band, 90, 3 dB Chip Hybrid Coupler X3C07P1-03S
Rogers RO3006, 0.025, = 6.5 D76131
PCB
r
A2T09D400--23NR6
RF Device Data
Freescale Semiconductor, Inc.
4
TYPICAL CHARACTERISTICS
60
55
50
45
40
20
19
18
17
16
15
14
13
12
11
10
V
V
= 28 Vdc, P = 93 W (Avg.), I
= 1200 mA
DD
out
DQA
= 1.12 Vdc, Single--Carrier W--CDMA
GSB
D
3.84 MHz Channel Bandwidth
G
ps
–2.5
–3.5
–4.5
–5.5
–6.5
–7.5
–18
–22
–26
PARC
ACPR
Input Signal PAR = 9.9 dB
@ 0.01% Probability on CCDF
–30
–34
–38
760 780 800 820 840 860 880 900 920 940 960
f, FREQUENCY (MHz)
Figure 3. Single--Carrier Output Peak--to--Average Ratio Compression
(PARC) Broadband Performance @ Pout = 93 Watts Avg.
–10
V
V
= 28 Vdc, P = 180 W (PEP), I
= 1200 mA
DD
out
DQA
= 1.12 Vdc, Two--Tone Measurements
GSB
–20 (f1 + f2)/2 = Center Frequency of 806 MHz
IM3--L
–30
IM3--U
IM5--U
–40
IM5--L
IM7--U
IM7--L
–50
–60
1
10
100
TWO--TONE SPACING (MHz)
Figure 4. Intermodulation Distortion Products
versus Two--Tone Spacing
18.6
18.2
1
70
–5
V
= 28 Vdc, I
= 1200 mA, V
= 1.12 Vdc
GSB
DD
DQA
f = 806 MHz, Single--Carrier W--CDMA, 3.84 MHz
Channel Bandwidth, Input Signal PAR = 9.9 dB
@ 0.01% Probability on CCDF
0
60
50
40
30
20
10
–15
–25
–35
–45
–55
–65
D
–1
–2
–3
–4
–5
17.8
17.4
17
ACPR
–1 dB = 51.94 W
G
ps
–2 dB = 76.31 W
–3 dB = 107.23 W
16.6
16.2
PARC
10
50
90
130
170
210
P
, OUTPUT POWER (WATTS)
out
Figure 5. Output Peak--to--Average Ratio
Compression (PARC) versus Output Power
A2T09D400--23NR6
RF Device Data
Freescale Semiconductor, Inc.
5
TYPICAL CHARACTERISTICS
60
50
40
30
20
10
0
22
20
18
16
14
12
10
0
V
= 28 Vdc, I
= 1200 mA, V
= 1.12 Vdc
GSB
DD
DQA
Single--Carrier W--CDMA, 3.84 MHz Channel
Bandwidth
–10
–20
–30
–40
–50
–60
836 MHz
806 MHz
776 MHz
G
ps
836 MHz
806 MHz
776 MHz
776 MHz
836 MHz
D
ACPR
806 MHz
Input Signal PAR = 9.9 dB @ 0.01%
Probability on CCDF
1
10
, OUTPUT POWER (WATTS) AVG.
100
200
P
out
Figure 6. Single--Carrier W--CDMA Power Gain, Drain
Efficiency and ACPR versus Output Power
18
17.5
Gain
17
16.5
16
V
= 28 Vdc
DD
P
= 0 dBm
in
I
V
= 1200 mA
= 1.12 Vdc
DQA
15.5
15
GSB
600
650
700
750
800
850
900
950
1000
f, FREQUENCY (MHz)
Figure 7. Broadband Frequency Response
A2T09D400--23NR6
RF Device Data
Freescale Semiconductor, Inc.
6
Table 8. Carrier Side Load Pull Performance — Maximum Power Tuning
V
= 28 Vdc, I = 1442 mA, Pulsed CW, 10 sec(on), 10% Duty Cycle
DD
DQ
Max Output Power
P1dB
(1)
Z
AM/PM
()
f
Z
Z
in
()
load
()
D
source
()
(%)
48.9
52.4
46.8
51.4
52.6
53.1
Gain (dB)
(dBm)
(W)
(MHz)
728
1.29 – j2.52
1.36 – j2.68
1.53 – j2.97
1.61 – j3.18
1.71 – j3.34
1.76 – j3.51
1.33 + j2.52
0.63 – j0.95
0.69 – j0.80
0.79 – j0.87
0.69 – j0.95
0.70 – j0.95
0.71 – j0.99
16.2
54.6
289
–4
–6
–4
–4
–4
–4
748
768
790
806
822
1.38 + j2.62
1.44 + j2.82
1.61 + j3.02
1.71 + j3.19
1.82 + j3.36
16.5
16.4
16.2
16.3
16.3
54.6
53.7
54.5
54.5
54.5
286
233
283
281
279
Max Output Power
P3dB
(2)
Z
()
AM/PM
()
f
Z
Z
()
load
D
source
()
in
(%)
53.3
53.1
52.3
54.4
54.5
48.9
Gain (dB)
(dBm)
(W)
(MHz)
728
748
768
790
806
822
1.29 – j2.52
1.21 + j2.63
0.60 – j1.03
0.64 – j1.03
0.79 – j1.04
0.71 – j1.05
0.70 – j1.07
0.55 – j1.18
14.0
55.7
368
–8
–9
–7
–9
–8
–7
1.36 – j2.68
1.53 – j2.97
1.61 – j3.18
1.71 – j3.34
1.76 – j3.51
1.28 + j2.74
1.34 + j2.94
1.49 + j3.14
1.59 + j3.33
1.72 + j3.52
14.0
14.3
14.1
14.1
13.0
55.4
54.9
55.3
55.3
55.3
347
310
342
342
337
(1) Load impedance for optimum P1dB power.
(2) Load impedance for optimum P3dB power.
Z
Z
Z
= Measured impedance presented to the input of the device at the package reference plane.
= Impedance as measured from gate contact to ground.
= Measured impedance presented to the output of the device at the package reference plane.
source
in
load
Input Load Pull
Tuner and Test
Circuit
Output Load Pull
Tuner and Test
Circuit
Device
Under
Test
Z
Z
in
Z
load
source
A2T09D400--23NR6
RF Device Data
Freescale Semiconductor, Inc.
7
Table 9. Carrier Side Load Pull Performance — Maximum Drain Efficiency Tuning
V
= 28 Vdc, I = 1442 mA, Pulsed CW, 10 sec(on), 10% Duty Cycle
DD
DQ
Max Drain Efficiency
P1dB
(1)
Z
AM/PM
()
f
Z
Z
in
()
load
()
D
source
()
(%)
67.8
63.8
60.4
67.7
68.1
67.8
Gain (dB)
(dBm)
(W)
(MHz)
728
1.29 – j2.52
1.36 – j2.68
1.53 – j2.97
1.61 – j3.18
1.71 – j3.34
1.76 – j3.51
1.19 + j2.57
2.14 – j0.27
1.85 – j0.46
2.11 – j0.11
2.25 + j0.30
1.92 + j0.22
1.76 + j0.02
20.3
52.1
164
–12
–13
–5
748
768
790
806
822
1.29 + j2.66
1.35 + j2.86
1.43 + j3.08
1.50 + j3.24
1.62 + j3.39
19.7
20.2
20.7
20.4
20.1
52.3
51.4
51.1
51.4
51.7
169
138
129
138
147
–12
–14
–13
Max Drain Efficiency
P3dB
(2)
Z
()
AM/PM
()
f
Z
Z
()
load
D
source
()
in
(%)
69.5
66.0
66.5
70.2
69.6
69.4
Gain (dB)
(dBm)
(W)
(MHz)
728
748
768
790
806
822
1.29 – j2.52
1.11 + j2.65
2.52 – j0.44
1.78 – j0.52
3.21 – j0.14
2.35 – j0.16
2.14 – j0.09
2.00 – j0.02
18.6
52.4
173
–19
–19
–13
–16
–19
–20
1.36 – j2.68
1.53 – j2.97
1.61 – j3.18
1.71 – j3.34
1.76 – j3.51
1.20 + j2.75
1.30 + j3.03
1.39 + j3.19
1.46 + j3.36
1.54 + j3.53
17.6
19.3
18.6
18.4
18.3
53.2
51.3
52.2
52.2
52.1
210
134
168
168
164
(1) Load impedance for optimum P1dB efficiency.
(2) Load impedance for optimum P3dB efficiency.
Z
Z
Z
= Measured impedance presented to the input of the device at the package reference plane.
= Impedance as measured from gate contact to ground.
= Measured impedance presented to the output of the device at the package reference plane.
source
in
load
Input Load Pull
Tuner and Test
Circuit
Output Load Pull
Tuner and Test
Circuit
Device
Under
Test
Z
Z
in
Z
load
source
A2T09D400--23NR6
RF Device Data
Freescale Semiconductor, Inc.
8
P1dB – TYPICAL CARRIER LOAD PULL CONTOURS — 790 MHz
2
1.5
1
2
1.5
66
1
50.5
64
0.5
0
0.5
E
E
62
60
0
51
–0.5
–1
–0.5
51.5
58
53
52.5
54
53.5
P
P
–1
56
52
–1.5
–2
–1.5
54
52
52
–2
1
2
3
4
1
2
3
4
0
0
REAL ()
REAL ()
Figure 8. P1dB Load Pull Output Power Contours (dBm)
Figure 9. P1dB Load Pull Efficiency Contours (%)
2
1.5
1
2
1.5
1
–14
–12
–16
0.5
0.5
0
–10
E
E
0
21
20.5
21.5
–0.5
–1
–0.5
–1
–8
–6
P
P
18
19
18.5
20
19.5
–1.5
–2
–1.5
–2
–4
–2
17.5
0
1
2
3
4
1
2
3
4
0
0
REAL ()
REAL ()
Figure 10. P1dB Load Pull Gain Contours (dB)
Figure 11. P1dB Load Pull AM/PM Contours ()
NOTE:
P
E
= Maximum Output Power
= Maximum Drain Efficiency
Gain
Drain Efficiency
Linearity
Output Power
A2T09D400--23NR6
RF Device Data
Freescale Semiconductor, Inc.
9
P3dB – TYPICAL CARRIER LOAD PULL CONTOURS — 790 MHz
2
1.5
1
2
56
1.5
54
1
68
0.5
0
0.5
51.5
66
0
E
52.5
E
70
–0.5
–1
–0.5
52
54.5
54
53.5
53
–1
–1.5
–2
P
P
64
60
55
62
58
–1.5
–2
1
2
3
4
1
2
3
4
0
0
REAL ()
REAL ()
Figure 12. P3dB Load Pull Output Power Contours (dBm)
Figure 13. P3dB Load Pull Efficiency Contours (%)
2
1.5
1
2
1.5
1
–22
–20
–18
0.5
0.5
0
0
E
E
–16
–0.5
–0.5
–1
–14
19
–12
–10
18.5
–1
–1.5
–2
P
P
17
18
17.5
15.5
15
–1.5
–2
–6
–8
16.5
16
1
2
3
4
1
2
3
4
0
0
REAL ()
REAL ()
Figure 14. P3dB Load Pull Gain Contours (dB)
Figure 15. P3dB Load Pull AM/PM Contours ()
NOTE:
P
E
= Maximum Output Power
= Maximum Drain Efficiency
Gain
Drain Efficiency
Linearity
Output Power
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RF Device Data
Freescale Semiconductor, Inc.
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PACKAGE DIMENSIONS
A2T09D400--23NR6
RF Device Data
Freescale Semiconductor, Inc.
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A2T09D400--23NR6
RF Device Data
Freescale Semiconductor, Inc.
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A2T09D400--23NR6
RF Device Data
Freescale Semiconductor, Inc.
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PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS
Refer to the following resources to aid your design process.
Application Notes
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
Electromigration MTTF Calculator
s2p File
Development Tools
Printed Circuit Boards
To Download Resources Specific to a Given Part Number:
1. Go to http://www.nxp.com/RF
2. Search by part number
3. Click part number link
4. Choose the desired resource from the drop down menu
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
Mar. 2016
Initial release of Data Sheet
A2T09D400--23NR6
RF Device Data
Freescale Semiconductor, Inc.
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Document Number: A2T09D400--23N
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