935320919118 [NXP]

RF Power Field-Effect Transistor;


型号：	935320919118
厂家：	NXP
描述：	RF Power Field-Effect Transistor
文件：	总10页 (文件大小：339K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Document Number: A2G35S200--01S

Rev. 0, 5/2016

Freescale Semiconductor

Technical Data

RF Power GaN Transistor

This 40 W RF power GaN transistor is designed for cellular base station

applications requiring very wide instantaneous bandwidth covering the

frequency range of 3400 to 3600 MHz.

A2G35S200--01SR3

This part is characterized and performance is guaranteed for applications

operating in the 3400 to 3600 MHz band. There is no guarantee of performance

when this part is used in applications designed outside of these frequencies.

3400–3600 MHz, 40 W AVG., 48 V

AIRFAST RF POWER GaN

TRANSISTOR

3500 MHz



Typical Single--Carrier W--CDMA Performance: V_DD= 48 Vdc,

_DQ= 291 mA, P_out= 40 W Avg., Input Signal PAR = 9.9 dB @ 0.01%

Probability on CCDF.



Output PAR

(dB)

ACPR

(dBc)

IRL

(dB)

Frequency

3400 MHz

3500 MHz

3600 MHz

(dB)

14.7

16.1

(%)

32.4

35.3

36.7

7.2

7.0

6.6

–34.9

–34.7

–32.8

–10

–19

–9

NI--400S--2S

Features



High Terminal Impedances for Optimal Broadband Performance

Designed for Digital Predistortion Error Correction Systems

Optimized for Doherty Applications

RF /V

in GS

RF /V

out DS

(Top View)

Figure 1. Pin Connections

A2G35S200--01SR3

RF Device Data

Freescale Semiconductor, Inc.

Table 1. Maximum Ratings

Rating

Symbol

Value

125

Unit

Vdc

C

Drain--Source Voltage

Gate--Source Voltage

Operating Voltage

DSS

–8, 0

0 to +55

Maximum Forward Gate Current @ T = 25C

GMAX

Storage Temperature Range

stg

–65 to +150

–55 to +150

–55 to +225

275

Case Operating Temperature Range

Operating Junction Temperature Range

C

(1)

Absolute Maximum Junction Temperature

MAX

C

Table 2. Thermal Characteristics

Characteristic

Symbol

(IR)

Value

Unit

(2)

Thermal Resistance by Infrared Measurement, Active Die Surface--to--Case

1.3

C/W



Case Temperature 75C, P = 81 W

(3)

Thermal Resistance by Finite Element Analysis, Junction--to--Case



(FEA)

1.75

C/W

Case Temperature 85C, P = 80 W

Table 3. ESD Protection Characteristics

Test Methodology

Class

Human Body Model (per JESD22--A114)

Machine Model (per EIA/JESD22--A115)

Charge Device Model (per JESD22--C101)

Table 4. Electrical Characteristics (T = 25C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

Off Characteristics

Drain--Source Breakdown Voltage

150

—

Vdc

(BR)DSS

(V = –8 Vdc, I = 24.3 mAdc)

On Characteristics

Gate Threshold Voltage

(V = 10 Vdc, I = 24.3 mAdc)

–3.8

–3.6

–7.5

–2.8

–3.1

—

–2.3

—

Vdc

GS(th)

Gate Quiescent Voltage

(V = 48 Vdc, I = 291 mAdc, Measured in Functional Test)

GS(Q)

Gate--Source Leakage Current

(V = 0 Vdc, V = –5 Vdc)

mAdc

GSS

1. Functional operation above 225C has not been characterized and is not implied. Operation at T

(275C) reduces median time to failure

MAX

by an order of magnitude; operation beyond T

could cause permanent damage.

MAX

2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.nxp.com/RF and search for AN1955.

3. R

(FEA) must be used for purposes related to reliability and limitations on maximum junction temperature. MTTF may be estimated by



[A + B/(T + 273)]

the expression MTTF (hours) = 10

, where T is the junction temperature in degrees Celsius, A = –10.3 and B = 8260.

(continued)

A2G35S200--01SR3

RF Device Data

Freescale Semiconductor, Inc.

Table 4. Electrical Characteristics (T = 25C unless otherwise noted) (continued)

Characteristic

Symbol

Min

Typ

Max

Unit

(1)

Functional Tests

(In Freescale Test Fixture, 50 ohm system) V = 48 Vdc, I = 291 mA, P = 40 W Avg., f = 3500 MHz,

out

Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz

Channel Bandwidth @ 5 MHz Offset. [See note on correct biasing sequence.]

Power Gain

14.3

29.4

6.4

—

16.1

35.3

7.0

17.4

—

Drain Efficiency



Output Peak--to--Average Ratio @ 0.01% Probability on CCDF

Adjacent Channel Power Ratio

Input Return Loss

PAR

ACPR

IRL

—

dBc

–34.7

–19

–29.9

–9

—

Load Mismatch (In Freescale Test Fixture, 50 ohm system) I = 291 mA, f = 3500 MHz, 12 sec(on), 10% Duty Cycle

VSWR 10:1 at 55 Vdc, 205 W Pulsed CW Output Power

(3 dB Input Overdrive from 180 W Pulsed CW Rated Power)

No Device Degradation

Typical Performance (In Freescale Test Fixture, 50 ohm system) V = 48 Vdc, I = 291 mA, 3400–3600 MHz Bandwidth

@ 1 dB Compression Point, CW

P1dB

—

180

225

–12

—



out

(2)

@ 3 dB Compression Point

P3dB

AM/PM



(Maximum value measured at the P3dB compression point across

the 3400–3600 MHz bandwidth)

VBW Resonance Point

VBW

—

100

—

MHz

res

(IMD Third Order Intermodulation Inflection Point)

Gain Flatness in 200 MHz Bandwidth @ P = 40 W Avg.

—

1.2

—

out

Gain Variation over Temperature

G

0.03

dB/C

(–30C to +85C)

Output Power Variation over Temperature

P1dB

—

0.01

—

dB/C

(–30C to +85C)

Table 5. Ordering Information

Device

Tape and Reel Information

Package

A2G35S200--01SR3

R3 Suffix = 250 Units, 32 mm Tape Width, 13--inch Reel

NI--400S--2S

1. Part internally input matched.

2. P3dB = P

+ 7.0 dB where P

is the average output power measured using an unclipped W--CDMA single--carrier input signal where

avg

output PAR is compressed to 7.0 dB @ 0.01% probability on CCDF.

NOTE: Correct Biasing Sequence for GaN Depletion Mode Transistors

Turning the device ON

1. Set V to the pinch--off (V ) voltage, typically –5 V

2. Turn on V to nominal supply voltage (50 V)

3. Increase V until I current is attained

4. Apply RF input power to desired level

Turning the device OFF

1. Turn RF power off

2. Reduce V down to V , typically –5 V

3. Reduce V down to 0 V (Adequate time must be allowed

for V to reduce to 0 V to prevent severe damage to device.)

4. Turn off V

A2G35S200--01SR3

RF Device Data

Freescale Semiconductor, Inc.

C12

C13

C10

C11

C14

A2G35S200--01S

Rev. 1

C15*

C1*

D74468

*C1 and C15 are mounted vertically.

Figure 2. A2G35S200--01SR3 Test Circuit Component Layout

Table 6. A2G35S200--01SR3 Test Circuit Component Designations and Values

Part

Description

0.7 pF Chip Capacitor

Part Number

Manufacturer

ATC

ATC100B0R7BT500XT

C2, C7, C8, C15

10 pF Chip Capacitors

1 pF Chip Capacitor

ATC800B100JT500XT

ATC100B1R0BT500XT

ATC800B8R2CT500XT

GRM32ER61H106KA12L

ATC800B120JT500XT

C5750X7S2A106M230KB

EEV-FK2A221M

ATC

C4, C9

C5, C6

C10, C11

C12, C13

C14

8.2 pF Chip Capacitors

10 F Chip Capacitors

12 pF Chip Capacitors

10 F Chip Capacitors

220 F, 100 V Electrolytic Capacitor

5.6 , 1/4 W Chip Resistor

ATC

Murata

ATC

TDK

Panasonic-ECG

Vishay

MTL

CRCW12065R60FKEA

D74468

PCB

Rogers RO4350B, 0.023,  = 3.66

A2G35S200--01SR3

RF Device Data

Freescale Semiconductor, Inc.

TYPICAL CHARACTERISTICS — 3400–3600 MHz

17.5

= 48 Vdc, P = 40 W (Avg.), I = 291 mA

out DQ

Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth



16.5

–5

–1.6

–1.9

–32

–34

–36

–38

–40

–42

15.5

ACPR

PARC

–10

–15

–20

–2.2

–2.5

14.5

IRL

–25

–30

–2.8

–3.1

13.5

Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF

3380 3410 3440 3470 3500 3530 3560 3590 3620

f, FREQUENCY (MHz)

Figure 3. Single--Carrier Output Peak--to--Average Ratio Compression

(PARC) Broadband Performance @ P_out= 40 Watts Avg.

= 48 Vdc, P = 70 W (PEP), I = 291 mA

out DQ

Two--Tone Measurements, (f1 + f2)/2 = Center

Frequency of 3500 MHz

–15

–30

–45

–60

–75

IM3--U

IM3--L

IM5--U

IM5--L

IM7--U

IM7--L

TWO--TONE SPACING (MHz)

100

300

Figure 4. Intermodulation Distortion Products

versus Two--Tone Spacing

–20

–25

–30

–35

–40

–45

–50

= 48 Vdc, I = 291 mA, f = 3500 MHz

Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth

–1 dB = 20.3 W



–2 dB = 33.5 W

–1

–2

–3

–3 dB = 47 W

PARC

ACPR

–4

–5

Input Signal PAR = 9.9 dB @ 0.01%

Probability on CCDF

, OUTPUT POWER (WATTS)

out

Figure 5. Output Peak--to--Average Ratio

Compression (PARC) versus Output Power

A2G35S200--01SR3

RF Device Data

Freescale Semiconductor, Inc.

TYPICAL CHARACTERISTICS — 3400–3600 MHz

= 48 Vdc, I = 291 mA

3600 MHz

3500 MHz

Single--Carrier W--CDMA, 3.84 MHz

Channel Bandwidth, Input Signal

PAR = 9.9 dB @ 0.01%

–10

–20

–30

–40

–50

3400 MHz

Probability on CCDF

ACPR

3600 MHz

3500 MHz

3400 MHz

3600 MHz

3500 MHz

3400 MHz



–60

, OUTPUT POWER (WATTS) AVG.

100

200

out

Figure 6. Single--Carrier W--CDMA Power Gain, Drain

Efficiency and ACPR versus Output Power

–5

Gain

–10

–15

IRL

–20

–25

= 48 Vdc

= 0 dBm

= 291 mA

–30

2950 3100 3250

3400 3550 3700 3850 4000 4150

f, FREQUENCY (MHz)

Figure 7. Broadband Frequency Response

A2G35S200--01SR3

RF Device Data

Freescale Semiconductor, Inc.

PACKAGE DIMENSIONS

A2G35S200--01SR3

RF Device Data

Freescale Semiconductor, Inc.

A2G35S200--01SR3

RF Device Data

Freescale Semiconductor, Inc.

PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS

Refer to the following resources to aid your design process.

Application Notes

AN1955: Thermal Measurement Methodology of RF Power Amplifiers

Engineering Bulletins

EB212: Using Data Sheet Impedances for RF LDMOS Devices

Software



RF High Power Model

.s2p File

Development Tools

Printed Circuit Boards



To Download Resources Specific to a Given Part Number:

1. Go to http://www.nxp.com/RF

2. Search by part number

3. Click part number link

4. Choose the desired resource from the drop down menu

REVISION HISTORY

The following table summarizes revisions to this document.

Revision

Date

Description

May 2016

 Initial Release of Data Sheet

A2G35S200--01SR3

RF Device Data

Freescale Semiconductor, Inc.

Information in this document is provided solely to enable system and software

implementers to use Freescale products. There are no express or implied copyright

licenses granted hereunder to design or fabricate any integrated circuits based on the

information in this document.

How to Reach Us:

Home Page:

freescale.com

Web Support:

freescale.com/support

Freescale reserves the right to make changes without further notice to any products

herein. Freescale makes no warranty, representation, or guarantee regarding the

suitability of its products for any particular purpose, nor does Freescale assume any

liability arising out of the application or use of any product or circuit, and specifically

disclaims any and all liability, including without limitation consequential or incidental

damages. “Typical” parameters that may be provided in Freescale data sheets and/or

specifications can and do vary in different applications, and actual performance may

vary over time. All operating parameters, including “typicals,” must be validated for

each customer application by customer’s technical experts. Freescale does not convey

any license under its patent rights nor the rights of others. Freescale sells products

pursuant to standard terms and conditions of sale, which can be found at the following

address: freescale.com/SalesTermsandConditions.

Freescale and the Freescale logo are trademarks of Freescale Semiconductor, Inc.,

Reg. U.S. Pat. & Tm. Off. Airfast is a trademark of Freescale Semiconductor, Inc. All

other product or service names are the property of their respective owners.

E 2016 Freescale Semiconductor, Inc.

A2G35S200--01SR3

RF Device Data

Freescale Semiconductor, Inc.

Document Number: A2G35S200--01S

Rev. 0, 5/2016

935320919118 [NXP]

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