935352756128 [NXP]
RF Power Field-Effect Transistor;
| 型号： | 935352756128 |
| 厂家： | 
NXP |
| 描述： | RF Power Field-Effect Transistor |
| 文件： | 总16页 (文件大小：595K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Document Number: A3T21H450W23S
Rev. 1, 08/2017
NXP Semiconductors
Technical Data
RF Power LDMOS Transistor
N--Channel Enhancement--Mode Lateral MOSFET
This 87 W asymmetrical Doherty RF power LDMOS transistor is designed
for cellular base station applications requiring very wide instantaneous
bandwidth capability covering the frequency range of 2110 to 2200 MHz.
A3T21H450W23SR6
2100 MHz
2110–2200 MHz, 87 W AVG., 30 V
AIRFAST RF POWER LDMOS
TRANSISTOR
Typical Doherty Single--Carrier W--CDMA Characterization Performance:
DD = 30 Vdc, IDQA = 600 mA, VGSB = 0.5 Vdc, Pout = 87 W Avg., Input Signal
PAR = 9.9 dB @ 0.01% Probability on CCDF.
V
G
Output PAR
(dB)
ACPR
(dBc)
ps
D
Frequency
2110 MHz
2155 MHz
2200 MHz
(dB)
15.1
15.7
15.3
(%)
48.5
48.9
47.2
8.1
7.9
7.8
–30.2
–30.2
–33.7
Features
Advanced high performance in--package Doherty
Designed for wide instantaneous bandwidth applications
Greater negative gate--source voltage range for improved Class C operation
Able to withstand extremely high output VSWR and broadband operating
conditions
Designed for digital predistortion error correction systems
ACP--1230S--4L2S
(2)
6
5
VBW
A
Carrier
RF /V
1
2
RF /V
outA DSA
inA GSA
(1)
RF /V
inB GSB
RF /V
outB DSB
4
3
Peaking
(2)
VBW
B
(Top View)
Figure 1. Pin Connections
1. Pin connections 4 and 5 are DC coupled
and RF independent.
2. Device cannot operate with V
current
DD
supplied through pin 3 and pin 6.
2017 NXP B.V.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Vdc
Vdc
Vdc
C
Drain--Source Voltage
V
–0.5, +65
–6.0, +10
32, +0
DSS
Gate--Source Voltage
V
GS
DD
Operating Voltage
V
Storage Temperature Range
Case Operating Temperature Range
T
stg
–65 to +150
–40 to +150
–40 to +225
T
C
C
(1,2)
Operating Junction Temperature Range
T
J
C
Table 2. Thermal Characteristics
(2,3)
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Case
R
0.16
C/W
JC
Case Temperature 78C, 87 W Avg., W--CDMA, 30 Vdc, I
= 600 mA,
DQA
V
= 0.5 Vdc, 2155 MHz
GSB
Table 3. ESD Protection Characteristics
Test Methodology
Class
2
Human Body Model (per JESD22--A114)
Charge Device Model (per JESD22--C101)
C3
Table 4. Electrical Characteristics (T = 25C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
(4)
Off Characteristics
Zero Gate Voltage Drain Leakage Current
I
I
—
—
—
—
—
—
10
5
Adc
Adc
Adc
DSS
DSS
GSS
(V = 65 Vdc, V = 0 Vdc)
DS
GS
Zero Gate Voltage Drain Leakage Current
(V = 32 Vdc, V = 0 Vdc)
DS
GS
Gate--Source Leakage Current
(V = 5 Vdc, V = 0 Vdc)
I
1
GS
DS
On Characteristics -- Side A, Carrier
Gate Threshold Voltage
V
1.4
2.2
0.0
1.8
2.6
2.3
3.0
0.3
Vdc
Vdc
Vdc
GS(th)
(V = 10 Vdc, I = 180 Adc)
DS
D
Gate Quiescent Voltage
(V = 30 Vdc, I = 600 mAdc, Measured in Functional Test)
V
GSA(Q)
DD
D
Drain--Source On--Voltage
(V = 10 Vdc, I = 1.8 Adc)
V
0.15
DS(on)
GS
D
On Characteristics -- Side B, Peaking
Gate Threshold Voltage
V
0.8
0.0
1.2
1.6
0.3
Vdc
Vdc
GS(th)
(V = 10 Vdc, I = 360 Adc)
DS
D
Drain--Source On--Voltage
(V = 10 Vdc, I = 3.6 Adc)
V
0.15
DS(on)
GS
D
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.nxp.com/RF/calculators.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.nxp.com/RF and search for AN1955.
4. Side A and Side B are tied together for these measurements.
(continued)
A3T21H450W23SR6
RF Device Data
NXP Semiconductors
2
Table 4. Electrical Characteristics (T = 25C unless otherwise noted) (continued)
A
Characteristic
Symbol
Min
Typ
Max
Unit
(1,2,3)
Functional Tests
(In NXP Doherty Production Test Fixture, 50 ohm system) V = 30 Vdc, I
= 600 mA, V = 0.5 Vdc,
GSB
DD
DQA
P
= 87 W Avg., f = 2200 MHz, Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
out
ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset.
Power Gain
G
14.2
44.0
55.0
—
15.4
47.0
16.2
—
dB
%
ps
D
Drain Efficiency
P
@ 3 dB Compression Point, CW
P3dB
55.9
—
dBm
dBc
out
Adjacent Channel Power Ratio
ACPR
–35.2
–30.9
(3)
Load Mismatch
(In NXP Doherty Production Test Fixture, 50 ohm system) I
= 600 mA, V
= 0.5 Vdc, f = 2155 MHz, 12 sec(on),
GSB
DQA
10% Duty Cycle
VSWR 10:1 at 32 Vdc, 400 W Pulsed CW Output Power
(3 dB Input Overdrive from 251 W Pulsed CW Rated Power)
No Device Degradation
(3)
Typical Performance
(In NXP Doherty Characterization Test Fixture, 50 ohm system) V = 30 Vdc, I
= 600 mA, V = 0.5 Vdc,
GSB
DD
DQA
2110–2200 MHz Bandwidth
(4)
P
@ 3 dB Compression Point
P3dB
—
—
501
–19
—
W
out
AM/PM
—
(Maximum value measured at the P3dB compression point across
the 2110–2200 MHz bandwidth)
VBW Resonance Point
VBW
—
180
—
MHz
res
(IMD Third Order Intermodulation Inflection Point)
Gain Flatness in 90 MHz Bandwidth @ P = 87 W Avg.
G
—
—
0.7
—
—
dB
out
F
Gain Variation over Temperature
G
0.007
dB/C
(–30C to +85C)
Output Power Variation over Temperature
P1dB
—
0.007
—
dB/C
(–30C to +85C)
Table 5. Ordering Information
Device
Tape and Reel Information
Package
A3T21H450W23SR6
R6 Suffix = 150 Units, 56 mm Tape Width, 13--inch Reel
ACP--1230S--4L2S
1. V
and V
must be tied together and powered by a single DC power supply.
DDB
DDA
2. Part internally matched both on input and output.
3. Measurements made with device in an asymmetrical Doherty configuration.
4. P3dB = P
+ 7.0 dB where P
is the average output power measured using an unclipped W--CDMA single--carrier input signal where
avg
avg
output PAR is compressed to 7.0 dB @ 0.01% probability on CCDF.
A3T21H450W23SR6
RF Device Data
NXP Semiconductors
3
V
GGA
V
DDA
C1
C18
R4
C9
C2
R2
C11
C12
D94048
C4
C3
C5
C17
C
P
C15
Z1
C16
C13
R1
C6
A3T21H450W23S
Rev. 1R3
R3
C7
C14
C10
C8
C19
R5
V
V
DDB
GGB
Note: V
and V
must be tied together and powered by a single DC power supply.
DDB
DDA
Figure 2. A3T21H450W23SR6 Characterization Test Circuit Component Layout
Table 6. A3T21H450W23SR6 Characterization Test Circuit Component Designations and Values
Part
Description
10 F Chip Capacitor
Part Number
Manufacturer
C1, C8, C9, C10, C12, C14
C5750X7S2A106M230KB
TDK
C2, C7, C11, C13
9.1 pF Chip Capacitor
ATC100B9R1CT500XT
ATC600F9R1BT250XT
ATC100B1R0CT500XT
ATC100B0R4CT500XT
ATC600F5R1BT250XT
ATC100B150JT500XT
ATC100B0R2BT500XT
MCGPR63V477M13X26-RH
C10A50Z4
ATC
C3, C5
C4
9.1 pF Chip Capacitor
ATC
1 pF Chip Capacitor
ATC
C6
0.4 pF Chip Capacitor
ATC
C15
5.1 pF Chip Capacitor
ATC
C16
15 pF Chip Capacitor
ATC
C17
0.2 pF Chip Capacitor
ATC
C18, C19
R1
470 F, 63 V Electrolytic Capacitor
50 , 10 W Chip Resistor
3.9 , 1/4 W Chip Resistor
1.8 k, 1/4 W Chip Resistor
2000--2300 MHz Band, 90, 5 dB Directional Coupler
Multicomp
Anaren
Vishay
Vishay
Anaren
MTL
R2, R3
R4, R5
Z1
CRCW12063R90FKEA
CRCW12061K80FKEA
X3C21P1-05S
PCB
Rogers RO4350B, 0.020, = 3.66
D94048
r
A3T21H450W23SR6
RF Device Data
NXP Semiconductors
4
TYPICAL CHARACTERISTICS — 2110–2200 MHz
50
49
48
47
16.2
16
V
= 30 Vdc, P = 87 W (Avg.), I
= 600 mA, V
= 0.5 Vdc
DD
out
DQA
GSB
D
15.8
15.6
15.4
15.2
15
G
ps
46
Single--Carrier W--CDMA
3.84 MHz Channel Bandwidth
PARC
–1.7
–1.8
–1.9
–2.0
–2.1
–2.2
–29
–31
–33
–35
–37
14.8
14.6
14.4
14.2
ACPR
Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF
–39
2070 2090 2110 2130 2150 2170 2190 2210 2230
f, FREQUENCY (MHz)
Figure 3. Single--Carrier Output Peak--to--Average Ratio Compression
(PARC) Broadband Performance @ Pout = 87 Watts Avg.
–20
V
DD
= 30 Vdc, P = 87 W (PEP), I
= 600 mA, V
= 0.5 Vdc,
out
DQA
GSB
Two--Tone Measurements, (f1 + f2)/2 = Center Frequency of 2155 MHz
–30
IM3--U
IM3--L
–40
–50
–60
–70
IM5--L
IM5--U
IM7--L
IM7--U
1
10
100
200
TWO--TONE SPACING (MHz)
Figure 4. Intermodulation Distortion Products
versus Two--Tone Spacing
17
16.5
16
–28
–29
–30
60
1
0
V
= 30 Vdc, I
= 600 mA, V
= 0.5 Vdc, f = 2155 MHz
GSB
DD
DQA
Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth
55
50
45
40
35
30
D
–1
–2
–3
–4
–5
G
ps
–1 dB = 53.5 W
–2 dB = 87.6 W
–31
–32
–33
–34
15.5
15
PARC
ACPR
14.5
14
Input Signal PAR = 9.9 dB @
0.01% Probability on CCDF
–3 dB = 118.7 W
20
50
80
110
140
170
P
, OUTPUT POWER (WATTS)
out
Figure 5. Output Peak--to--Average Ratio
Compression (PARC) versus Output Power
A3T21H450W23SR6
RF Device Data
NXP Semiconductors
5
TYPICAL CHARACTERISTICS — 2110–2200 MHz
18
16
14
12
10
8
0
65
V
= 30 Vdc, I
= 600 mA, V
= 0.5 Vdc
DD
DQA
GSB
2200 MHz
Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth
–10
–20
–30
–40
–50
–60
55
G
ps
45
35
25
15
2200 MHz
2155 MHz
2110 MHz
2155 MHz
2110 MHz
ACPR
2110 MHz
2155 MHz
2200 MHz
D
Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF
10 100
, OUTPUT POWER (WATTS) AVG.
5
400
6
1
P
out
Figure 6. Single--Carrier W--CDMA Power Gain, Drain
Efficiency and ACPR versus Output Power
17
V
P
= 30 Vdc
= 0 dBm
DD
Gain
in
15
13
I
= 600 mA
= 0.5 Vdc
DQA
V
GSB
11
9
7
5
1800
1900
2000
2100
2200
2300
2400
2500
f, FREQUENCY (MHz)
Figure 7. Broadband Frequency Response
A3T21H450W23SR6
RF Device Data
NXP Semiconductors
6
Table 7. Carrier Side Load Pull Performance — Maximum Power Tuning
V
= 30 Vdc, I
= 804 mA, Pulsed CW, 10 sec(on), 10% Duty Cycle
DD
DQA
Max Output Power
P1dB
(1)
Z
AM/PM
()
f
Z
Z
in
()
load
()
D
source
()
(%)
58.7
58.1
57.9
56.4
Gain (dB)
(dBm)
(W)
(MHz)
2110
2140
2170
2200
2.26 – j6.69
2.79 – j7.42
4.03 – j8.18
5.37 – j9.47
2.28 + j6.33
1.26 – j4.31
1.32 – j4.37
1.29 – j4.36
1.32 – j4.37
18.2
53.5
224
–14
–15
–14
–15
2.93 + j7.10
3.88 + j7.96
5.43 + j8.78
18.3
18.3
18.3
53.4
53.3
53.3
218
216
213
Max Output Power
P3dB
(2)
Z
()
AM/PM
()
f
Z
Z
()
load
D
source
()
in
(%)
59.3
59.0
58.7
57.6
Gain (dB)
15.9
(dBm)
54.2
(W)
263
257
(MHz)
2110
2140
2170
2200
2.26 – j6.69
2.20 + j6.63
1.24 – j4.55
1.30 – j4.58
1.31 – j4.57
1.31 – j4.54
–19
–19
–18
–19
2.79 – j7.42
4.03 – j8.18
5.37 – j9.47
2.87 + j7.50
3.90 + j8.49
5.62 + j9.53
16.1
54.1
16.1
16.0
54.1
54.0
256
253
(1) Load impedance for optimum P1dB power.
(2) Load impedance for optimum P3dB power.
Z
Z
Z
= Measured impedance presented to the input of the device at the package reference plane.
= Impedance as measured from gate contact to ground.
= Measured impedance presented to the output of the device at the package reference plane.
source
in
load
Table 8. Carrier Side Load Pull Performance — Maximum Efficiency Tuning
V
= 30 Vdc, I
= 804 mA, Pulsed CW, 10 sec(on), 10% Duty Cycle
DD
DQA
Max Drain Efficiency
P1dB
(1)
Z
AM/PM
()
f
Z
Z
in
()
load
()
D
source
()
(%)
69.2
67.3
67.2
65.5
Gain (dB)
(dBm)
(W)
(MHz)
2110
2140
2170
2200
2.26 – j6.69
2.79 – j7.42
4.03 – j8.18
5.37 – j9.47
2.33 + j6.54
2.68 – j3.37
2.73 – j3.29
2.24 – j3.62
2.19 – j3.17
20.7
51.7
148
–20
–20
–18
–19
3.03 + j7.31
3.98 + j8.13
5.53 + j9.11
20.9
20.3
20.7
51.4
52.1
51.6
138
163
144
Max Drain Efficiency
P3dB
(2)
Z
()
AM/PM
()
f
Z
Z
()
load
D
source
()
in
(%)
68.7
66.4
66.8
66.3
Gain (dB)
18.3
(dBm)
52.7
(W)
187
177
(MHz)
2110
2140
2170
2200
2.26 – j6.69
2.25 + j6.72
2.63 – j3.88
2.84 – j3.95
2.49 – j4.00
2.54 – j3.69
–24
–22
–21
–23
2.79 – j7.42
4.03 – j8.18
5.37 – j9.47
3.04 + j7.57
4.05 + j8.54
5.86 + j9.55
18.3
52.5
18.1
18.3
52.9
52.6
193
184
(1) Load impedance for optimum P1dB efficiency.
(2) Load impedance for optimum P3dB efficiency.
Z
Z
Z
= Measured impedance presented to the input of the device at the package reference plane.
= Impedance as measured from gate contact to ground.
= Measured impedance presented to the output of the device at the package reference plane.
source
in
load
Input Load Pull
Tuner and Test
Circuit
Output Load Pull
Tuner and Test
Circuit
Device
Under
Test
Z
Z
in
Z
load
source
A3T21H450W23SR6
RF Device Data
NXP Semiconductors
7
Table 9. Peaking Side Load Pull Performance — Maximum Power Tuning
V
= 30 Vdc, V
= 1.8 Vdc, Pulsed CW, 10 sec(on), 10% Duty Cycle
DD
GSB
Max Output Power
P1dB
(1)
Z
AM/PM
()
f
Z
Z
in
()
load
()
D
source
()
(%)
54.5
54.4
54.3
53.6
Gain (dB)
(dBm)
(W)
(MHz)
2110
2140
2170
2200
2.11 – j7.12
1.48 + j6.12
3.76 – j4.75
4.05 – j4.63
4.56 – j4.43
4.94 – j4.19
17.7
56.1
405
–15
–15
–16
–17
2.61 – j7.79
3.53 – j8.88
4.62 – j10.2
1.78 + j6.77
2.25 + j7.54
2.97 + j8.37
18.1
18.2
18.3
56.0
56.0
55.9
399
395
388
Max Output Power
P3dB
(2)
Z
()
AM/PM
()
f
Z
Z
()
load
D
source
()
in
(%)
54.9
54.5
54.6
53.7
Gain (dB)
15.6
(dBm)
56.6
(W)
460
453
(MHz)
2110
2140
2170
2200
2.11 – j7.12
1.48 + j6.40
4.35 – j5.05
4.95 – j4.79
5.17 – j4.46
5.69 – j4.11
–20
–21
–22
–23
2.61 – j7.79
3.53 – j8.88
4.62 – j10.2
1.82 + j7.12
2.35 + j7.96
3.21 + j8.90
16.0
56.6
16.1
16.1
56.5
56.4
449
440
(1) Load impedance for optimum P1dB power.
(2) Load impedance for optimum P3dB power.
Z
Z
Z
= Measured impedance presented to the input of the device at the package reference plane.
= Impedance as measured from gate contact to ground.
= Measured impedance presented to the output of the device at the package reference plane.
source
in
load
Table 10. Peaking Side Load Pull Performance — Maximum Efficiency Tuning
V
= 30 Vdc, V
= 1.8 Vdc, Pulsed CW, 10 sec(on), 10% Duty Cycle
DD
GSB
Max Drain Efficiency
P1dB
(1)
Z
AM/PM
()
f
Z
Z
in
()
load
()
D
source
()
(%)
61.4
61.8
62.3
61.8
Gain (dB)
(dBm)
(W)
(MHz)
2110
2140
2170
2200
2.11 – j7.12
1.30 + j6.07
3.28 – j2.25
2.94 – j2.24
2.66 – j1.97
2.72 – j2.01
19.4
55.1
323
–21
–23
–25
–26
2.61 – j7.79
3.53 – j8.88
4.62 – j10.2
1.55 + j6.69
1.92 + j7.43
2.55 + j8.26
19.8
20.1
20.1
54.9
54.6
54.6
312
288
291
Max Drain Efficiency
P3dB
(2)
Z
()
AM/PM
()
f
Z
Z
()
load
D
source
()
in
(%)
59.4
59.7
59.9
59.7
Gain (dB)
17.3
(dBm)
55.8
(W)
377
372
(MHz)
2110
2140
2170
2200
2.11 – j7.12
1.33 + j6.35
3.83 – j2.30
3.63 – j2.16
3.22 – j1.97
3.24 – j1.95
–27
–28
–30
–31
2.61 – j7.79
3.53 – j8.88
4.62 – j10.2
1.64 + j7.05
2.09 + j7.87
2.85 + j8.81
17.7
55.7
17.9
17.9
55.5
55.5
353
352
(1) Load impedance for optimum P1dB efficiency.
(2) Load impedance for optimum P3dB efficiency.
Z
Z
Z
= Measured impedance presented to the input of the device at the package reference plane.
= Impedance as measured from gate contact to ground.
= Measured impedance presented to the output of the device at the package reference plane.
source
in
load
Input Load Pull
Tuner and Test
Circuit
Output Load Pull
Tuner and Test
Circuit
Device
Under
Test
Z
Z
in
Z
load
source
A3T21H450W23SR6
RF Device Data
NXP Semiconductors
8
P1dB – TYPICAL CARRIER SIDE LOAD PULL CONTOURS — 2140 MHz
–1
–2
–3
–4
–5
–1
62
60
58
49.5
–2
56
64
66
50
50.5
51
54
62
52
–3
–4
–5
E
E
60
51.5
58
56
P
P
52
52.5
53
2
3
2
3
1
4
5
1
4
5
REAL ()
REAL ()
Figure 8. P1dB Load Pull Output Power Contours (dBm)
Figure 9. P1dB Load Pull Efficiency Contours (%)
–1
–1
–2
–3
–4
–5
–28
–26
–24
22
–22
–2
21.5
–20
–3
–4
–5
21
E
E
–18
20.5
18
P
–16
P
20
18.5
19.5
19
–14
2
3
2
3
REAL ()
1
4
5
1
4
5
REAL ()
Figure 10. P1dB Load Pull Gain Contours (dB)
Figure 11. P1dB Load Pull AM/PM Contours ()
NOTE:
P
E
= Maximum Output Power
= Maximum Drain Efficiency
Gain
Drain Efficiency
Linearity
Output Power
A3T21H450W23SR6
RF Device Data
NXP Semiconductors
9
P3dB – TYPICAL CARRIER SIDE LOAD PULL CONTOURS — 2140 MHz
–2
–3
–4
–2
50
60
62
58
56
64
54
52
50.5
–3
–4
50
66
51
64
62
E
E
51.5
P
P
54
52
60
–5
–6
–5
–6
53.5
52.5
58
53
50
56
52
54
2
2
1
3
4
5
1
3
4
5
REAL ()
REAL ()
Figure 12. P3dB Load Pull Output Power Contours (dBm)
Figure 13. P3dB Load Pull Efficiency Contours (%)
–2
–2
–3
–4
19.5
–30
–28
–26
–24
–3
–4
19
–22
E
E
18.5
–20
P
P
18
4
–5
–6
–5
–6
–18
15.5
17.5
–16
–14
16
17
16.5
2
2
1
3
5
1
3
4
5
REAL ()
REAL ()
Figure 14. P3dB Load Pull Gain Contours (dB)
Figure 15. P3dB Load Pull AM/PM Contours ()
NOTE:
P
E
= Maximum Output Power
= Maximum Drain Efficiency
Gain
Drain Efficiency
Linearity
Output Power
A3T21H450W23SR6
RF Device Data
NXP Semiconductors
10
P1dB – TYPICAL PEAKING SIDE LOAD PULL CONTOURS — 2140 MHz
0
–2
–4
0
53.5
54
54.5
58
55
56
60
54
–2
–4
E
E
55.5
52
50
P
P
48
46
–6
–8
–6
–8
55.5
55
54.5
54
3
4
3
4
2
5
6
7
8
2
5
6
7
8
REAL ()
REAL ()
Figure 16. P1dB Load Pull Output Power Contours (dBm)
Figure 17. P1dB Load Pull Efficiency Contours (%)
0
0
–26
–24
E
20
–22
19.5
–20
–2
–2
–4
E
19
–18
18.5
–16
18
–4
–14
P
P
17.5
–6
–6
–8
–12
17
16.5
–8
3
4
3
4
2
5
6
7
8
2
5
6
7
8
REAL ()
REAL ()
Figure 18. P1dB Load Pull Gain Contours (dB)
Figure 19. P1dB Load Pull AM/PM Contours ()
NOTE:
P
E
= Maximum Output Power
= Maximum Drain Efficiency
Gain
Drain Efficiency
Linearity
Output Power
A3T21H450W23SR6
RF Device Data
NXP Semiconductors
11
P3dB – TYPICAL PEAKING SIDE LOAD PULL CONTOURS — 2140 MHz
1
0
1
54.5
E
0
–1
–2
–3
–4
–5
–6
–7
–8
55
54
55.5
–1
–2
56
58
54
52
56
E
50
46
–3
–4
–5
–6
–7
–8
48
56.5
P
P
44
56
55
55.5
6
7
8
9
6
7
8
9
2
3
4
5
2
3
4
5
REAL ()
REAL ()
Figure 20. P3dB Load Pull Output Power Contours (dBm)
Figure 21. P3dB Load Pull Efficiency Contours (%)
1
1
0
0
–1
–2
–3
–4
–5
–6
–7
–8
17.5
–32
–30
17
18
E
–1
–2
–28
–26
16.5
–24
E
–22
–20
–3
–4
–5
–6
–7
–8
16
P
P
15.5
–18
15
14.5
–16
6
7
8
9
6
7
8
9
2
3
4
5
REAL ()
2
3
4
5
REAL ()
Figure 22. P3dB Load Pull Gain Contours (dB)
Figure 23. P3dB Load Pull AM/PM Contours ()
NOTE:
P
E
= Maximum Output Power
= Maximum Drain Efficiency
Gain
Drain Efficiency
Linearity
Output Power
A3T21H450W23SR6
RF Device Data
NXP Semiconductors
12
PACKAGE DIMENSIONS
A3T21H450W23SR6
RF Device Data
NXP Semiconductors
13
A3T21H450W23SR6
RF Device Data
NXP Semiconductors
14
PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS
Refer to the following resources to aid your design process.
Application Notes
AN1908: Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
Electromigration MTTF Calculator
.s2p File
Development Tools
Printed Circuit Boards
To Download Resources Specific to a Given Part Number:
1. Go to http://www.nxp.com/RF
2. Search by part number
3. Click part number link
4. Choose the desired resource from the drop down menu
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
1
July 2017
Aug. 2017
Initial release of data sheet
Typical Characteristic 2110–2200 MHz performance graphs: added Figs. 3–7, pp. 5–6
A3T21H450W23SR6
RF Device Data
NXP Semiconductors
15
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E 2017 NXP B.V.
Document Number: A3T21H450W23S
Rev. 1, 08/2017
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