935377233129 [NXP]
RF Power Field-Effect Transistor;
| 型号： | 935377233129 |
| 厂家： | 
NXP |
| 描述： | RF Power Field-Effect Transistor |
| 文件： | 总41页 (文件大小：836K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Document Number: MRF101AN
Rev. 1, 05/2019
NXP Semiconductors
Technical Data
RF Power LDMOS Transistors
High Ruggedness N--Channel
Enhancement--Mode Lateral MOSFETs
MRF101AN
MRF101BN
These devices are designed for use in HF and VHF communications,
industrial, scientific and medical (ISM) and broadcast and aerospace
applications. The devices are extremely rugged and exhibit high performance
up to 250 MHz.
1.8–250 MHz, 100 W CW, 50 V
WIDEBAND
RF POWER LDMOS TRANSISTORS
Typical Performance: VDD = 50 Vdc
Frequency
(MHz)
P
(W)
G
(dB)
D
(%)
out
ps
Signal Type
S
(1)
13.56
CW
CW
CW
CW
CW
CW
CW
130 CW
125 CW
120 CW
119 CW
130 CW
115 CW
104 CW
115 Peak
27.1
24.9
23.8
22.8
23.2
20.6
21.2
21.1
79.6
79.6
81.5
82.1
80.8
76.8
76.5
76.7
(2)
27
(3)
40.68
G
S
D
(4)
50
(5)
81.36
T O -- 2 2 0 -- 3
MRF101AN
(6,7)
87.5–108
(7,8)
136–174
S
(9)
230
Pulse
(100 sec, 20% Duty Cycle)
Load Mismatch/Ruggedness
Frequency
D
S
G
P
(W)
Test
Voltage
in
Signal Type
VSWR
(MHz)
Result
T O -- 2 2 0 -- 3
MRF101BN
40.68
CW
> 65:1 at all
Phase
0.64 CW
50
No Device
Degradation
Angles
230
Pulse
(100 sec, 20%
Duty Cycle)
> 65:1 at all
Phase
Angles
1.8 Peak
(3 dB
Overdrive)
50
No Device
Degradation
1. Measured in 13.56 MHz reference circuit (page 5).
2. Measured in 27 MHz reference circuit (page 9).
3. Measured in 40.68 MHz reference circuit (page 13).
4. Measured in 50 MHz reference circuit (page 17).
5. Measured in 81.36 MHz reference circuit (page 21).
D
Backside
6. Measured in 87.5–108 MHz broadband reference circuit (page 25).
7. The values shown are the center band performance numbers
across the indicated frequency range.
8. Measured in 136–174 MHz VHF broadband reference circuit (page 30).
9. Measured in 230 MHz fixture (page 34).
Note: Exposed backside of the package
and tab also serves as a source
terminal for the transistor.
G
S
Features
Mirror pinout versions (A and B) to simplify use in a push--pull,
two--up configuration
Characterized from 30 to 50 V
Suitable for linear application
Integrated ESD protection with greater negative gate--source
voltage range for improved Class C operation
Included in NXP product longevity program with assured
supply for a minimum of 15 years after launch
Typical Applications
Radio and VHF TV broadcast
HF and VHF communications
Switch mode power supplies
Industrial, scientific, medical (ISM)
– Laser generation
– Plasma etching
– Particle accelerators
– MRI and other medical applications
– Industrial heating, welding and drying systems
2018–2019 NXP B.V.
Table 1. Maximum Ratings
Rating
Symbol
Value
–0.5, +133
–6.0, +10
50
Unit
Vdc
Vdc
Vdc
C
Drain--Source Voltage
V
DSS
Gate--Source Voltage
V
GS
DD
Operating Voltage
V
Storage Temperature Range
Case Operating Temperature Range
Operating Junction Temperature Range
T
stg
–65 to +150
–40 to +150
–40 to +175
T
C
C
(1,2)
T
J
C
Total Device Dissipation @ T = 25C
P
182
W
C
D
Derate above 25C
0.91
W/C
Table 2. Thermal Characteristics
(2,3)
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Case
R
1.1
C/W
JC
CW: Case Temperature 77C, 150 W CW, 50 Vdc, I
= 100 mA, 40.68 MHz
DQ
Thermal Impedance, Junction to Case
Z
0.37
C/W
JC
Pulse: Case Temperature 73C, 113 W Peak, 100 sec Pulse Width, 20% Duty Cycle,
50 Vdc, I = 100 mA, 230 MHz
DQ
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JS--001--2017)
Charge Device Model (per JS--002--2014)
1B, passes 1000 V
C3, passes 1200 V
Table 4. Electrical Characteristics (T = 25C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Gate--Source Leakage Current
I
—
133
—
—
—
—
1
Adc
Vdc
GSS
(V = 5 Vdc, V = 0 Vdc)
GS
DS
Drain--Source Breakdown Voltage
(V = 0 Vdc, I = 50 mAdc)
V
—
10
(BR)DSS
GS
D
Zero Gate Voltage Drain Leakage Current
I
Adc
DSS
(V = 100 Vdc, V = 0 Vdc)
DS
GS
On Characteristics
Gate Threshold Voltage
(V = 10 Vdc, I = 290 Adc)
V
V
1.7
—
—
—
2.2
2.5
2.7
—
—
—
Vdc
Vdc
Vdc
S
GS(th)
GS(Q)
DS(on)
DS
D
Gate Quiescent Voltage
(V = 50 Vdc, I = 100 mAdc)
DS
D
Drain--Source On--Voltage
(V = 10 Vdc, I = 1 Adc)
V
0.45
7.1
GS
D
Forward Transconductance
(V = 10 Vdc, I = 8.8 Adc)
g
fs
DS
D
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.nxp.com/RF/calculators.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.nxp.com/RF and search for AN1955.
(continued)
MRF101AN MRF101BN
RF Device Data
NXP Semiconductors
2
Table 4. Electrical Characteristics (T = 25C unless otherwise noted) (continued)
A
Characteristic
Symbol
Min
Typ
Max
Unit
Dynamic Characteristics
Reverse Transfer Capacitance
C
—
—
—
0.96
43.4
149
—
—
—
pF
pF
pF
rss
(V = 50 Vdc 30 mV(rms)ac @ 1 MHz, V = 0 Vdc)
DS
GS
Output Capacitance
(V = 50 Vdc 30 mV(rms)ac @ 1 MHz, V = 0 Vdc)
DS
C
oss
GS
Input Capacitance
C
iss
(V = 50 Vdc, V = 0 Vdc 30 mV(rms)ac @ 1 MHz)
DS
GS
Typical Performance — 230 MHz (In NXP 230 MHz Fixture, 50 ohm system) V = 50 Vdc, I = 100 mA, P = 0.9 W, f = 230 MHz,
DD
DQ
in
100 sec Pulse Width, 20% Duty Cycle
Common--Source Amplifier Output Power
P
—
—
—
115
—
—
—
W
dB
%
out
Power Gain
G
21.1
76.7
ps
D
Drain Efficiency
Table 5. Load Mismatch/Ruggedness (In NXP 230 MHz Fixture, 50 ohm system) I = 100 mA
DQ
Frequency
(MHz)
P
in
(W)
Signal Type
VSWR
Test Voltage, V
Result
DD
230
Pulse
> 65:1 at all
1.8 Peak
50
No Device Degradation
(100 sec, 20% Duty Cycle)
Phase Angles
(3 dB Overdrive)
Table 6. Ordering Information — Device
Device
Shipping Information
Package
MRF101AN
TO--220--3L (Pin 1: Gate,
Pin 2: Source, Pin 3: Drain)
MPQ = 250 devices (50 devices per tube, 5 tubes per box)
MRF101BN
TO--220--3L (Pin 1: Drain,
Pin 2: Source, Pin 3: Gate)
Table 7. Ordering Information — Reference Circuits
Order Number
Description
MRF101AN-13MHZ
MRF101AN-27MHZ
MRF101AN-40MHZ
MRF101AN-50MHZ
MRF101AN-81MHZ
MRF101AN-88MHZ
MRF101AN-VHF
MRF101AN 13.56 MHz Reference Circuit
MRF101AN 27 MHz Reference Circuit
MRF101AN 40.68 MHz Reference Circuit
MRF101AN 50 MHz Reference Circuit
MRF101AN 81.36 MHz Reference Circuit
MRF101AN 87.5–108 MHz Reference Circuit
MRF101AN 136–174 MHz Reference Circuit
MRF101AN 230 MHz Test Fixture
MRF101AN-230MHZ
MRF101AN MRF101BN
RF Device Data
NXP Semiconductors
3
TYPICAL CHARACTERISTICS
1000
100
10
Measured with 30 mV(rms)ac @ 1 MHz, V = 0 Vdc
GS
C
C
iss
oss
C
rss
1
0.1
0
10
20
30
40
50
V
, DRAIN--SOURCE VOLTAGE (VOLTS)
DS
Figure 1. Capacitance versus Drain--Source Voltage
10
9
10
V
= 50 Vdc
DD
I
D
= 2.5 Amps
10
I
D
= 3.1 Amps
8
7
6
10
I
= 3.6 Amps
D
10
10
90
110
130
150
170
190
T , JUNCTION TEMPERATURE (C)
J
Note: MTTF value represents the total cumulative operating time
under indicated test conditions.
MTTF calculator available at http://www.nxp.com/RF/calculators.
Figure 2. MTTF versus Junction Temperature — CW
MRF101AN MRF101BN
RF Device Data
NXP Semiconductors
4
13.56 MHz COMPACT REFERENCE CIRCUIT (MRF101AN) — 0.7 2.0 (1.8 cm 5.0 cm)
Table 8. 13.56 MHz Performance (In NXP Reference Circuit, 50 ohm system)
V
= 50 Vdc, I = 100 mA, P = 0.25 W, CW
DD
DQ in
Frequency
(MHz)
P
(W)
G
(dB)
D
(%)
out
ps
13.56
130
27.1
79.6
MRF101AN MRF101BN
RF Device Data
NXP Semiconductors
5
13.56 MHz COMPACT REFERENCE CIRCUIT (MRF101AN) — 0.7 2.0 (1.8 cm 5.0 cm)
C4 C5
Q1
L2
C14
L4
C10
C3
L3
C13
C6
C9
C8
C7
R1
C2
L1
C1
C12
C11
B1
V
DS
V
GS
aaa--033382
Figure 3. MRF101AN Compact Reference Circuit Component Layout and Assembly Example — 13.56 MHz
aaa--032274
Figure 4. MRF101AN Compact Reference Circuit Board
Table 9. MRF101AN Compact Reference Circuit Component Designations and Values — 13.56 MHz
Part
Description
Part Number
2743019447
Manufacturer
Fair-Rite
B1
Short RF Bead
C1, C2, C9, C10, C12, C13
0.01 F Chip Capacitor
GRM21BR72A103KA01B
GQM2195C2E330GB12D
GRM2165C2A361JA01D
GRM2165C2A391JA01D
GQM2195C2E680GB12D
GQM2195C2A201GB12D
200B103KT50XT
Murata
Murata
Murata
Murata
Murata
Murata
ATC
C3
C4
C5
C6
C7
C8
C11
C14
L1
33 pF Chip Capacitor
360 pF Chip Capacitor
390 pF Chip Capacitor
68 pF Chip Capacitor
200 pF Chip Capacitor
0.01 F Chip Capacitor
1 F Chip Capacitor
GRM21BR71H105KA12L
C3216X7R2A105K160AA
0805WL821JT
Murata
TDK
1 F Chip Capacitor
820 nH Chip Inductor
ATC
L2
4 Turn, #20 AWG, ID = 0.2 Inductor, Hand Wound
500 nH Square Air Core Inductor
330 nH Square Air Core Inductor
RF Power LDMOS Transistor
75 , 1/4 W Chip Resistor
8076
Belden
Coilcraft
Coilcraft
NXP
L3
2929SQ-501JE
L4
2929SQ-331JE
Q1
R1
PCB
MRF101AN
SG73P2ATTD75R0F
D113958
KOA Speer
MTL
FR4 0.09, = 4.8, 2 oz. Copper
r
MRF101AN MRF101BN
RF Device Data
NXP Semiconductors
6
TYPICAL CHARACTERISTICS — 13.56 MHz
COMPACT REFERENCE CIRCUIT (MRF101AN)
140
120
100
80
160
V
DD
= 50 Vdc, f = 13.56 MHz, CW
V
= 50 Vdc, I = 100 mA, f = 13.56 MHz, CW
DD DQ
140
120
100
80
P
= 0.25 W
in
P
= 0.12 W
in
60
60
40
40
20
0
20
0
0
0.5
1
1.5
2
2.5
3
3.5
0
0.05 0.1 0.15
0.2 0.25
0.3 0.35
0.4 0.45
V
, GATE--SOURCE VOLTAGE (VOLTS)
P , INPUT POWER (WATTS)
in
GS
f
P1dB
(W)
P3dB
(W)
Figure 5. CW Output Power versus Gate--Source
Voltage at a Constant Input Power
(MHz)
13.56
113
128
Figure 6. CW Output Power versus Input Power
32
100
V
DD
= 50 Vdc, I = 100 mA, f = 13.56 MHz, CW
DQ
31
30
29
28
27
26
25
24
23
90
80
70
60
50
40
G
ps
D
30
20
10
0
22
0
20
40
60
80
100
120
140
P
, OUTPUT POWER (WATTS)
out
Figure 7. Power Gain and Drain Efficiency
versus CW Output Power
MRF101AN MRF101BN
RF Device Data
NXP Semiconductors
7
13.56 MHz COMPACT REFERENCE CIRCUIT (MRF101AN)
f
Z
Z
load
source
(MHz)
()
(
13.56
25.3 + j10.2
11.3 – j6.4
Z
Z
= Test circuit impedance as measured from
gate to ground.
source
= Test circuit impedance as measured from
drain to ground.
load
Device
Under
Test
Output
Matching
Network
Input
Matching
Network
50
50
Z
Z
load
source
Figure 8. Series Equivalent Source and Load Impedance — 13.56 MHz
MRF101AN MRF101BN
RF Device Data
NXP Semiconductors
8
27 MHz COMPACT REFERENCE CIRCUIT (MRF101AN) — 0.7 2.0 (1.8 cm 5.0 cm)
Table 10. 27 MHz Performance (In NXP Reference Circuit, 50 ohm system)
V
= 50 Vdc, I = 100 mA, P = 0.4 W, CW
DD
DQ in
Frequency
(MHz)
P
(W)
G
(dB)
D
(%)
out
ps
27
125
24.9
79.6
MRF101AN MRF101BN
RF Device Data
NXP Semiconductors
9
27 MHz COMPACT REFERENCE CIRCUIT (MRF101AN) — 0.7 2.0 (1.8 cm 5.0 cm)
C4 C5
L4
Q1
L2
C3
C14
C13
C6
C15
C7
C8 C10
C9
L3
R1
C2
L1
C1
C12
C11
B1
V
DS
V
GS
aaa--033384
Figure 9. MRF101AN Compact Reference Circuit Component Layout and Assembly Example — 27 MHz
aaa--032274
Figure 10. MRF101AN Compact Reference Circuit Board
Table 11. MRF101AN Compact Reference Circuit Component Designations and Values — 27 MHz
Part
Description
Part Number
2743019447
Manufacturer
Fair-Rite
B1
Short RF Bead
C1
82 pF Chip Capacitor
GQM2195C2E820GB12D
GQM2195C2A201GB12D
GQM2195C2E330GB12D
GQM2195C2A161JB12D
GQM2195C2E150FB12D
GQM2195C2E101GB12D
GRM2165C2A102JA01D
08055C105KAT2A
Murata
Murata
Murata
Murata
Murata
Murata
Murata
AVX
C2
200 pF Chip Capacitor
33 pF Chip Capacitor
C3
C4, C5
C6
160 pF Chip Capacitor
15 pF Chip Capacitor
C7
100 pF Chip Capacitor
1000 pF Chip Capacitor
1 F Chip Capacitor
C8, C9, C10
C11
C12, C13
C14
C15
L1
0.01 F Chip Capacitor
1 F Chip Capacitor
GRM21BR72A103KA01B
CL31B105KCHSNNE
GRM32QR73A682KW
0805WL221JT
Murata
Samsung
Murata
ATC
6.8 nF Chip Capacitor
270 nH Chip Inductor
L2
39 nH Chip Inductor
1812SMS-39NJLC
Coilcraft
Coilcraft
Coilcraft
NXP
L3
300 nH Square Air Core Inductor
180 nH Square Air Core Inductor
RF Power LDMOS Transistor
75 , 1/4 W Chip Resistor
2222SQ-301JE
L4
2222SQ-181JE
Q1
MRF101AN
R1
SG73P2ATTD75R0F
D113958
KOA Speer
MTL
PCB
FR4 0.09, = 4.8, 2 oz. Copper
r
MRF101AN MRF101BN
RF Device Data
NXP Semiconductors
10
TYPICAL CHARACTERISTICS — 27 MHz
COMPACT REFERENCE CIRCUIT (MRF101AN)
140
120
100
80
160
V
DD
= 50 Vdc, f = 27 MHz, CW
V
= 50 Vdc, I = 100 mA, f = 27 MHz, CW
DD DQ
140
120
100
80
P
= 0.4 W
in
P
= 0.2 W
in
60
60
40
40
20
0
20
0
0
0.5
1
1.5
2
2.5
3
3.5
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
V
, GATE--SOURCE VOLTAGE (VOLTS)
P , INPUT POWER (WATTS)
in
GS
f
P1dB
(W)
P3dB
(W)
Figure 11. CW Output Power versus
Gate--Source Voltage at a Constant Input Power
(MHz)
27
103
125
Figure 12. CW Output Power versus Input Power
30
100
90
80
70
60
50
40
V
= 50 Vdc, I = 100 mA, f = 27 MHz, CW
DQ
DD
29
28
27
26
25
24
23
22
21
G
ps
D
30
20
10
0
20
0
20
40
60
80
100
120
140
P
, OUTPUT POWER (WATTS)
out
Figure 13. Power Gain and Drain Efficiency
versus CW Output Power
MRF101AN MRF101BN
RF Device Data
NXP Semiconductors
11
27 MHz COMPACT REFERENCE CIRCUIT (MRF101AN)
f
Z
Z
load
source
(MHz)
()
()
27
28.9 + j14.7
12.9 – j5.3
Z
Z
= Test circuit impedance as measured from
gate to ground.
source
= Test circuit impedance as measured from
drain to ground.
load
Device
Under
Test
Output
Matching
Network
Input
Matching
Network
50
50
Z
Z
load
source
Figure 14. Series Equivalent Source and Load Impedance — 27 MHz
MRF101AN MRF101BN
RF Device Data
NXP Semiconductors
12
40.68 MHz COMPACT REFERENCE CIRCUIT (MRF101AN) — 0.7 2.0 (1.8 cm 5.0 cm)
Table 12. 40.68 MHz Performance (In NXP Reference Circuit, 50 ohm system)
V
= 50 Vdc, I = 100 mA, P = 0.5 W, CW
DD
DQ in
Frequency
(MHz)
P
(W)
G
(dB)
D
(%)
out
ps
40.68
120
23.8
81.5
MRF101AN MRF101BN
RF Device Data
NXP Semiconductors
13
40.68 MHz COMPACT REFERENCE CIRCUIT (MRF101AN) — 0.7 2.0 (1.8 cm 5.0 cm)
C4
Q1
L4
L2
C3
C10
C13
C5
C6
C8
C14
C9
B1
L3
R1
C2
C1
L1
C12
C11
C7
V
DS
V
GS
aaa--032273
Figure 15. MRF101AN Compact Reference Circuit Component Layout and Assembly Example — 40.68 MHz
aaa--032274
Figure 16. MRF101AN Compact Reference Circuit Board
Table 13. MRF101AN Compact Reference Circuit Component Designations and Values — 40.68 MHz
Part
Description
Part Number
2743019447
Manufacturer
Fair-Rite
B1
Short RF Bead
C1, C5
C2, C4
C3
82 pF Chip Capacitor
GQM2195C2E820GB12D
GQM2195C2A201GB12D
GQM2195C2E330GB12D
GRM2165C2A102JA01D
GJ821BR71H105KA12L
GRM21BR72A103KA01B
C3216X7R2A105K160AA
0805WL151JT
Murata
Murata
Murata
Murata
Murata
Murata
TDK
200 pF Chip Capacitor
33 pF Chip Capacitor
C6, C7, C8, C9, C10
1000 pF Chip Capacitor
1 F Chip Capacitor
C11
C12, C13
C14
L1
0.01 F Chip Capacitor
1 F Chip Capacitor
150 nH Chip Inductor
ATC
L2
17.5 nH, 4 Turn Inductor
160 nH Square Air Core Inductor
110 nH Square Air Core Inductor
RF Power LDMOS Transistor
75 , 1/4 W Chip Resistor
GA3095-ACL
Coilcraft
Coilcraft
Coilcraft
NXP
L3
2222SQ-161JEC
L4
2222SQ-111JEB
Q1
MRF101AN
R1
SG73P2ATTD75R0F
D113958
KOA Speer
MTL
PCB
FR4 0.09, = 4.8, 2 oz. Copper
r
MRF101AN MRF101BN
RF Device Data
NXP Semiconductors
14
TYPICAL CHARACTERISTICS — 40.68 MHz
COMPACT REFERENCE CIRCUIT (MRF101AN)
140
120
100
80
140
V
DD
= 50 Vdc, f = 40.68 MHz, CW
V
= 50 Vdc, I = 100 mA, f = 40.68 MHz, CW
DD DQ
120
100
80
60
40
20
0
P
= 0.5 W
in
P
= 0.25 W
in
60
40
20
0
0
0.5
1
1.5
2
2.5
3
3.5
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
V
, GATE--SOURCE VOLTAGE (VOLTS)
P , INPUT POWER (WATTS)
in
GS
f
P1dB
(W)
P3dB
(W)
Figure 17. CW Output Power versus
Gate--Source Voltage at a Constant Input Power
(MHz)
40.68
101
121
Figure 18. CW Output Power versus Input Power
30
100
V
= 50 Vdc, I = 100 mA, f = 40.68 MHz, CW
DQ
DD
29
28
27
26
25
24
23
22
21
90
80
70
60
50
40
G
ps
D
30
20
10
0
20
0
20
40
60
80
100
120
140
P
, OUTPUT POWER (WATTS)
out
Figure 19. Power Gain and Drain Efficiency
versus CW Output Power
MRF101AN MRF101BN
RF Device Data
NXP Semiconductors
15
40.68 MHz COMPACT REFERENCE CIRCUIT (MRF101AN)
f
Z
Z
load
source
(MHz)
()
()
40.68
24.0 + j12.6
14.2 – j2.5
Z
Z
= Test circuit impedance as measured from
gate to ground.
source
= Test circuit impedance as measured from
drain to ground.
load
Device
Under
Test
Output
Matching
Network
Input
Matching
Network
50
50
Z
Z
load
source
Figure 20. Series Equivalent Source and Load Impedance — 40.68 MHz
MRF101AN MRF101BN
RF Device Data
NXP Semiconductors
16
50 MHz COMPACT REFERENCE CIRCUIT (MRF101AN) — 0.7 2.0 (1.8 cm 5.0 cm)
Table 14. 50 MHz Performance (In NXP Reference Circuit, 50 ohm system)
V
= 50 Vdc, I = 100 mA, P = 0.64 W, CW
DD
DQ in
Frequency
(MHz)
P
(W)
G
(dB)
D
(%)
out
ps
50
119
22.8
82.1
MRF101AN MRF101BN
RF Device Data
NXP Semiconductors
17
50 MHz COMPACT REFERENCE CIRCUIT (MRF101AN) — 0.7 2.0 (1.8 cm 5.0 cm)
C4
Q1
L4
L2
C13
C10
C5
C6 C8
C7
C9
L1
C3
R1
C2
L3
C12
C1
B1
C11
V
GS
V
DS
aaa--033386
Figure 21. MRF101AN Compact Reference Circuit Component Layout and Assembly Example — 50 MHz
aaa--032274
Figure 22. MRF101AN Compact Reference Circuit Board
Table 15. MRF101AN Compact Reference Circuit Component Designations and Values — 50 MHz
Part
Description
Part Number
2743019447
Manufacturer
Fair-Rite
B1
C1
C2
C3
C4
C5
Short RF Bead
82 pF Chip Capacitor
GQM2195C2E820GB12D
GQM2195C2A201GB12D
CL31B105KCHSNNE
GQM2195C2A181GB12D
GQM2195C2E680GB12D
GRM2165C2A102JA01D
08055C105KAT2A
GRM21BR72A103KA01B
0805WL101JT
Murata
Murata
Samsung
Murata
Murata
Murata
AVX
200 pF Chip Capacitor
1 F Chip Capacitor
180 pF Chip Capacitor
68 pF Chip Capacitor
C6, C7, C8, C9, C10
1000 pF Chip Capacitor
1 F Chip Capacitor
C11
C12, C13
L1
0.01 F Chip Capacitor
100 nH Chip Inductor
Murata
ATC
L2
17.5 nH Air Core Inductor
160 nH Square Air Core Inductor
110 nH Square Air Core Inductor
RF Power LDMOS Transistor
75 , 1/4 W Chip Resistor
GA3095-ALC
Coilcraft
Coilcraft
Coilcraft
NXP
L3
2222SQ-161JEC
L4
2222SQ-111JEB
Q1
MRF101AN
R1
SG73P2ATTD75R0F
D113958
KOA Speer
MTL
PCB
FR4 0.09, = 4.8, 2 oz. Copper
r
MRF101AN MRF101BN
RF Device Data
NXP Semiconductors
18
TYPICAL CHARACTERISTICS — 50 MHz
COMPACT REFERENCE CIRCUIT (MRF101AN)
140
120
100
80
160
V
DD
= 50 Vdc, f = 50 MHz, CW
V
= 50 Vdc, I = 100 mA, f = 50 MHz, CW
DD DQ
140
120
100
80
P
= 0.64 W
in
P
= 0.32 W
in
60
60
40
40
20
0
20
0
0
0.5
1
1.5
2
2.5
3
3.5
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
V
, GATE--SOURCE VOLTAGE (VOLTS)
P , INPUT POWER (WATTS)
in
GS
f
P1dB
(W)
P3dB
(W)
Figure 23. CW Output Power versus
Gate--Source Voltage at a Constant Input Power
(MHz)
50
99
118
Figure 24. CW Output Power versus Input Power
30
100
90
80
70
60
50
40
V
= 50 Vdc, I = 100 mA, f = 50 MHz, CW
DQ
DD
29
28
27
26
25
24
23
22
21
G
ps
30
20
10
0
D
20
0
20
40
60
80
100
120
140
P
, OUTPUT POWER (WATTS)
out
Figure 25. Power Gain and Drain Efficiency
versus CW Output Power
MRF101AN MRF101BN
RF Device Data
NXP Semiconductors
19
50 MHz COMPACT REFERENCE CIRCUIT (MRF101AN)
f
Z
Z
load
source
(MHz)
()
()
50
19.2 + j12.8
15.8 – j3.2
Z
Z
= Test circuit impedance as measured from
gate to ground.
source
= Test circuit impedance as measured from
drain to ground.
load
Device
Under
Test
Output
Matching
Network
Input
Matching
Network
50
50
Z
Z
load
source
Figure 26. Series Equivalent Source and Load Impedance — 50 MHz
MRF101AN MRF101BN
RF Device Data
NXP Semiconductors
20
81.36 MHz REFERENCE CIRCUIT (MRF101AN) — 2.0 3.0 (5.0 cm 7.6 cm)
Table 16. 81.36 MHz Performance (In NXP Reference Circuit, 50 ohm system)
V
= 50 Vdc, I = 100 mA, P = 0.64 W, CW
DD
DQ in
Frequency
(MHz)
P
(W)
G
(dB)
D
(%)
out
ps
81.36
130
23.2
80.8
MRF101AN MRF101BN
RF Device Data
NXP Semiconductors
21
81.36 MHz REFERENCE CIRCUIT (MRF101AN) — 2.0 3.0 (5.0 cm 7.6 cm)
R3
C10
R2
C15
C9
U1
V
DS
R4
B1
C13
C8
C7
Q1
C14
C11
C12
C1
L4
R1
L1
C2
L2
L3
C5
C6
C3
C4
Rev. 0
D112904
aaa--033387
Figure 27. MRF101AN Reference Circuit Component Layout — 81.36 MHz
Table 17. MRF101AN Reference Circuit Component Designations and Values — 81.36 MHz
Part
Description
Part Number
2743019447
Manufacturer
Fair-Rite
B1
Short RF Bead
C1, C5, C6, C7, C8
1000 pF Chip Capacitor
GRM2165C2A102JA01D
GQM2195C2A201GB12D
GQM2195C2E101GB12D
GQM2195C2E680GB12D
GRM21BR71H105KA12L
GRM21BR72A103KA01B
MCGPR100V227M16X26
0805WL560JT
Murata
Murata
Murata
Murata
Murata
Murata
Multicomp
ATC
C2
200 pF Chip Capacitor
C3
100 pF Chip Capacitor
C4
68 pF Chip Capacitor
C9, C10, C11, C14
1 F Chip Capacitor
C12, C13
C15
L1
0.01 F Chip Capacitor
220 F, 100 V Electrolytic Capacitor
56 nH Chip Inductor
L2
6.6 nH Air Coil Inductor
GA3093-ALC
Coilcraft
NXP
L3
3 Turn, #18 AWG, ID = 0.225 Inductor
7 Turn, #18 AWG, ID = 0.225 Inductor
RF Power LDMOS Transistor
75 , 1/4 W Chip Resistor
10 k, 1/8 W Chip Resistor
Handwound
L4
Handwound
NXP
Q1
MRF101AN
NXP
R1
SG73P2ATTD75R0F
CRCW080510K0FKEA
KOA Speer
Vishay
Bourns
R2, R3
R4
5 k Multi-turn Cermet Trimming Potentiometer, 3224W-1-502E
12 Turns
U1
Voltage Regulator 5 V, Micro8
FR4 0.09, = 4.8, 2 oz. Copper
LP2951ACDMR2G
D112904
ON Semiconductor
MTL
PCB
r
MRF101AN MRF101BN
RF Device Data
NXP Semiconductors
22
TYPICAL CHARACTERISTICS — 81.36 MHz
REFERENCE CIRCUIT (MRF101AN)
140
120
100
80
160
V
DD
= 50 Vdc, f = 81.36 MHz, CW
V
= 50 Vdc, I = 100 mA, f = 81.36 MHz, CW
DD DQ
140
120
100
80
P
= 0.64 W
in
P
= 0.32 W
in
60
60
40
40
20
0
20
0
0
0.5
1
1.5
2
2.5
3
3.5
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
V
, GATE--SOURCE VOLTAGE (VOLTS)
P , INPUT POWER (WATTS)
in
GS
f
P1dB
(W)
P3dB
(W)
Figure 28. CW Output Power versus
Gate--Source Voltage at a Constant Input Power
(MHz)
81.36
123
136
Figure 29. CW Output Power versus Input Power
29
100
V
= 50 Vdc, I = 100 mA, f = 81.36 MHz, CW
DQ
DD
28
27
26
25
24
23
22
21
20
90
80
70
60
50
40
G
ps
30
20
10
0
D
19
0
20
40
60
80
100
120
140
P
, OUTPUT POWER (WATTS)
out
Figure 30. Power Gain and Drain Efficiency
versus CW Output Power
MRF101AN MRF101BN
RF Device Data
NXP Semiconductors
23
81.36 MHz REFERENCE CIRCUIT (MRF101AN)
f
Z
Z
load
source
(MHz)
()
()
81.36
12.0 + j11.0
11.5 + j3.0
Z
Z
= Test circuit impedance as measured from
gate to ground.
source
= Test circuit impedance as measured from
drain to ground.
load
Device
Under
Test
Output
Matching
Network
Input
Matching
Network
50
50
Z
Z
load
source
Figure 31. Series Equivalent Source and Load Impedance — 81.36 MHz
MRF101AN MRF101BN
RF Device Data
NXP Semiconductors
24
87.5–108 MHz COMPACT BROADBAND REFERENCE CIRCUIT (MRF101AN) — 0.7 2.0 (1.8 cm 5.0 cm)
Table 18. 87.5–108 MHz Broadband Performance (In NXP Reference Circuit, 50 ohm system)
V
= 50 Vdc, I = 100 mA, P = 1 W, CW
DD
DQ in
Frequency
(MHz)
P
G
D
out
ps
(W)
122
115
115
(dB)
20.8
20.6
20.6
(%)
79.0
76.8
76.0
87.5
98
108
MRF101AN MRF101BN
RF Device Data
NXP Semiconductors
25
87.5–108 MHz COMPACT BROADBAND REFERENCE CIRCUIT (MRF101AN) — 0.7 2.0 (1.8 cm 5.0 cm)
Q1
L4
C3
L3
L5
C4
C13
C8
C7
C9
C5
C14
L1
C10
R1
C12
C2
C1
C6
B1
V
DS
V
GS
C11
L2
aaa--033385
Figure 32. MRF101AN Compact Reference Circuit Component Layout and Assembly Example — 87.5–108 MHz
aaa--032274
Figure 33. MRF101AN Compact Reference Circuit Board
Table 19. MRF101AN Compact Reference Circuit Component Designations and Values — 87.5–108 MHz
Part
Description
Part Number
2743019447
Manufacturer
Fair-Rite
B1
Short RF Bead
C1, C2
C3
200 pF Chip Capacitor
22 pF Chip Capacitor
100 pF Chip Capacitor
510 pF Chip Capacitor
2.7 pF Chip Capacitor
36 pF Chip Capacitor
1 F Chip Capacitor
GQM2195C2A201GB12D
GQM2195C2E220GB12D
GQM2195C2E101GB12D
GRM2165C2A511JA01D
GQM2195C2E2R7BB12D
600F360JT250XT
Murata
Murata
Murata
Murata
Murata
ATC
C4
C5, C6, C7, C8, C12
C9
C10
C11
C13
C14
L1
GJ821BR71H105KA12L
GRM21BR72A103KA01B
C3216X7R2A105K160AA
0805WL360JT
Murata
Murata
TDK
0.01 F Chip Capacitor
1 F Chip Capacitor
36 nH Chip Inductor
ATC
L2, L4, L5
L3
120 nH Chip Inductor
33 nH Chip Inductor
1812SMS-R12JLC
Coilcraft
Coilcraft
NXP
1812SMS-33NJLC
Q1
RF Power LDMOS Transistor
75 , 1/4 W Chip Resistor
MRF101AN
R1
SG73P2ATTD75R0F
D113958
KOA Speer
MTL
PCB
FR4 0.09, = 4.8, 2 oz. Copper
r
MRF101AN MRF101BN
RF Device Data
NXP Semiconductors
26
TYPICAL CHARACTERISTICS — 87.5–108 MHz
COMPACT BROADBAND REFERENCE CIRCUIT (MRF101AN)
25
24
23
22
21
20
19
18
17
16
85
V
= 50 Vdc, P = 1 W, l = 100 mA, CW
in DQ
DD
80
75
D
70
65
G
ps
130
120
110
100
90
P
out
87
89 91 93 95 97 99 101 103 105 107 109
f, FREQUENCY (MHz)
Figure 34. Power Gain, Drain Efficiency and CW Output
Power versus Frequency at a Constant Input Power
140
f = 87.5 MHz
V
= 50 Vdc, I = 100 mA, CW
DQ
DD
120
100
80
98 MHz
108 MHz
60
40
20
0
0
0.2
0.4
P
0.6
0.8
1.0
1.2
1.4
INPUT POWER (WATTS)
in,
Figure 35. CW Output Power versus Input Power and Frequency
27
85
80
75
70
f = 87.5 MHz
V
= 50 Vdc, l = 100 mA, CW
DQ
DD
26
25
24
23
22
21
20
19
G
ps
98 MHz
108 MHz
65
60
87.5 MHz
55
50
D
45
108 MHz
100
98 MHz
18
17
20
40
35
140
40
60
80
120
P
, OUTPUT POWER (WATTS)
out
Figure 36. Power Gain and Drain Efficiency versus
CW Output Power and Frequency
MRF101AN MRF101BN
RF Device Data
NXP Semiconductors
27
87.5–108 MHz COMPACT BROADBAND REFERENCE CIRCUIT (MRF101AN)
f
Z
Z
load
source
(MHz)
()
()
87.5
98
8.52 + j12.46
10.59 + j14.03
12.21 + j15.02
13.15 + j5.48
13.12 + j5.21
10.74 + j5.52
108
Z
Z
= Test circuit impedance as measured from
gate to ground.
source
= Test circuit impedance as measured from
drain to ground.
load
Device
Under
Test
Output
Matching
Network
Input
Matching
Network
50
50
Z
Z
load
source
Figure 37. Series Equivalent Source and Load Impedance — 87.5–108 MHz
MRF101AN MRF101BN
RF Device Data
NXP Semiconductors
28
HARMONIC MEASUREMENTS — 87.5–108 MHz
COMPACT BROADBAND REFERENCE CIRCUIT
F1
H2
87.5 MHz
175 MHz –32 dB
Fundamental (F1)
H3 262.5 MHz –52 dB
H4
350 MHz –71 dB
H3
H4
H2
(262.5 MHz) (350 MHz)
(175 MHz)
–32 dB
–52 dB
–71 dB
H2
H3
H4
35 MHz
Span: 350 MHz
Center: 228.5 MHz
Figure 38. 87.5 MHz Harmonics @ 120 W CW
MRF101AN MRF101BN
RF Device Data
NXP Semiconductors
29
136–174 MHz COMPACT VHF BROADBAND REFERENCE CIRCUIT (MRF101AN) — 0.7 2.0 (1.8 cm 5.0 cm)
Table 20. 136–174 MHz VHF Broadband Performance (In NXP Reference Circuit, 50 ohm system)
V
= 50 Vdc, I = 100 mA, P = 0.79 W, CW
DD
DQ in
Frequency
(MHz)
P
G
D
out
ps
(W)
117
104
107
(dB)
21.7
21.2
21.3
(%)
80.0
76.5
75.4
135
155
175
MRF101AN MRF101BN
RF Device Data
NXP Semiconductors
30
136–174 MHz COMPACT VHF BROADBAND REFERENCE CIRCUIT (MRF101AN) — 0.7 2.0 (1.8 cm 5.0 cm)
C3
Q1
L3
L5
L6
C9
C8
C13
C6
C7
B1
C14
R1
L2
C12
C11
L4
C4
C2
L1
C5
V
C1
V
DS
GS
aaa--032286
Note: Component number C10 is not used.
Figure 39. MRF101AN Compact Reference Circuit Component Layout and Assembly Example — 136–174 MHz
aaa--032285
Figure 40. MRF101AN Compact Reference Circuit Board
Table 21. MRF101AN Compact VHF Broadband Reference Circuit Component Designations and Values — 136–174 MHz
Part
Description
Part Number
2743019447
Manufacturer
Fair-Rite
B1
C1
Short RF Bead
39 pF Chip Capacitor
510 pF Chip Capacitor
68 pF Chip Capacitor
27 pF Chip Capacitor
10 pF Chip Capacitor
1 F Chip Capacitor
GQM2195C2E390GB12D
GRM2165C2A511JA01D
GQM2195C2E680GB12D
GQM2195C2E270GB12D
GQM2195C2E100FB12D
GJ821BR71H105KA12L
GRM21BR72A103KA01B
C3216X7R2A105K160AA
0805WL220JT
Murata
Murata
Murata
Murata
Murata
Murata
Murata
TDK
C2, C5, C6, C7, C8, C12
C3
C4
C9
C11
C13
C14
L1
0.01 F Chip Capacitor
1 F Chip Capacitor
22 nH Chip Inductor
ATC
L2
12 nH Chip Inductor
0805WL120JT
ATC
L3, L4, L6
L5
68 nH Air Core Inductor
12 nH, 3 Turn Inductor
RF Power LDMOS Transistor
75 , 1/4 W Chip Resistor
1812SMS-68NJLC
GA3094-ALC
Coilcraft
Coilcraft
NXP
Q1
MRF101AN
R1
SG73P2ATTD75R0F
D113958
KOA Speer
MTL
PCB
FR4 0.09 = 4.8, 2 oz. Copper
r
MRF101AN MRF101BN
RF Device Data
NXP Semiconductors
31
TYPICAL CHARACTERISTICS — 136–174 MHz
COMPACT VHF BROADBAND REFERENCE CIRCUIT (MRF101AN)
26
25
24
23
22
21
20
19
18
17
85
V
= 50 Vdc, P = 0.79 W, l = 100 mA, CW
in DQ
DD
80
75
D
70
65
130
120
110
100
90
G
ps
P
out
135
140
145
150
155
160
165
170
175
f, FREQUENCY (MHz)
Figure 41. Power Gain, Drain Efficiency and CW Output
Power versus Frequency at a Constant Input Power
140
120
140
V
DD
= 50 Vdc, f = 155 MHz, CW
V
= 50 Vdc, I = 100 mA, CW
DQ
DD
f = 135 MHz
120
100
80
P
= 0.79 W
in
100
80
175 MHz
155 MHz
P
= 0.4 W
in
60
60
40
40
20
0
20
0
0
0.5
1
1.5
2
2.5
3
3.5
0
0.2
0.4
0.6
0.8
1.0
P
INPUT POWER (WATTS)
V
, GATE--SOURCE VOLTAGE (VOLTS)
in,
GS
Figure 43. CW Output Power versus
Input Power and Frequency
Figure 42. CW Output Power versus
Gate--Source Voltage at a Constant Input Power
27
85
80
V
= 50 Vdc, l = 100 mA, CW
DQ
DD
f = 155 MHz
26
25
24
23
22
21
20
19
75
G
ps
135 MHz
70
175 MHz
65
60
D
55
50
135 MHz
155 MHz
175 MHz
45
18
17
20
40
35
140
40
60
80
100
120
P
, OUTPUT POWER (WATTS)
out
Figure 44. Power Gain and Drain Efficiency versus
CW Output Power and Frequency
MRF101AN MRF101BN
RF Device Data
NXP Semiconductors
32
136–174 MHz COMPACT VHF BROADBAND REFERENCE CIRCUIT (MRF101AN)
f
Z
Z
load
source
(MHz)
135
145
155
165
175
6.8 + j10.2
6.2 + j10.2
5.3 + j10.8
4.4 + j11.9
3.9 + j13.4
9.5 + j5.2
9.9 + j5.9
10.2 + j6.2
10.0 + j5.9
8.8 + j5.0
Z
Z
= Test circuit impedance as measured from
gate to ground.
source
= Test circuit impedance as measured from
drain to ground.
load
Device
Under
Test
Output
Matching
Network
Input
Matching
Network
50
50
Z
Z
load
source
Figure 45. Series Equivalent Source and Load Impedance — 136–174 MHz
MRF101AN MRF101BN
33
RF Device Data
NXP Semiconductors
230 MHz FIXTURE (MRF101AN) — 4.0 5.0 (10.2 cm 12.7 cm)
C15
C13
C14
L2
C16
C17
C7
C5
C6 C4
cut out
area
B1
C8
R1
C1
C12
C11
L1
L3
C2
MRF101AN
Rev. 0
C3
C9
C10
D113651
aaa--031939
Figure 46. MRF101AN Fixture Component Layout — 230 MHz
Table 22. MRF101AN Fixture Component Designations and Values — 230 MHz
Part
Description
Long Ferrite Bead
Part Number
2743021447
Manufacturer
Fair-Rite
B1
C1, C2, C10
C3
18 pF Chip Capacitor
ATC100B180JT500XT
ATC100B430JT500XT
ATC800B102JT50XT
ATC
43 pF Chip Capacitor
ATC
C4, C13
C5
1000 pF Chip Capacitor
0.1 F Chip Capacitor
10 nF Chip Capacitor
ATC
GRM319R72A104KA01D
C1210C103J5GACTU
C3225X7R1H225K
T491D476K016AT
Murata
Kemet
TDK
C6
C7
2.2 F Chip Capacitor
47 F, 16 V Tantalum Capacitor
51 pF Chip Capacitor
C8
Kemet
ATC
C9
ATC100B510JT500XT
ATC100B160JT500XT
ATC800B471JW50XT
C1812104K1RACTU
C3225X7R2A225K
HMK432B7225KM-T
MCGPR100V227M16X26
1812SMS-39NJLC
C11
C12
C14
C15
C16
C17
L1
16 pF Chip Capacitor
ATC
470 pF Chip Capacitor
0.1 F Chip Capacitor
2.2 F Chip Capacitor
2.2 F Chip Capacitor
220 F, 100 V Electrolytic Capacitor
39 nH Chip Inductor
ATC
Kemet
TDK
Taiyo Yuden
Multicomp
Coilcraft
Coilcraft
Coilcraft
Vishay
MTL
L2
46 nH Chip Inductor
1010VS-46NME
L3
17.5 nH, 4 Turn Inductor
470 , 1/4 W Chip Resistor
GA3095-ALC
R1
CRCW1206470RFKEA
PCB
Rogers AD255C, 0.030, = 2.55, 2 oz. Copper D113651
r
MRF101AN MRF101BN
RF Device Data
NXP Semiconductors
34
TYPICAL CHARACTERISTICS — 230 MHz FIXTURE, TC = 25_C (MRF101AN)
150
V
= 50 Vdc, f = 230 MHz
DD
Pulse Width = 100 sec, 20% Duty Cycle
125
100
75
P
= 0.9 W
in
50
P
= 0.45 W
2.5
in
25
0
0
0.5
1
1.5
2
3
V
, GATE--SOURCE VOLTAGE (VOLTS)
GS
Figure 47. Output Power versus Gate--Source
Voltage at a Constant Input Power
53
51
49
47
45
43
41
39
24
100
80
60
40
20
0
V
= 50 Vdc, I = 100 mA, f = 230 MHz
V = 50 Vdc, f = 230 MHz, Pulse Width = 100 sec, 20% Duty Cycle
DD
DD
DQ
Pulse Width = 100 sec, 20% Duty Cycle
I
= 300 mA
200 mA
DQ
22
20
18
16
14
G
ps
100 mA
50 mA
D
300 mA
200 mA
100 mA
30
50 mA
37
15
18
21
24
27
30
33
3
300
P , INPUT POWER (dBm) PEAK
in
P
, OUTPUT POWER (WATTS) PEAK
out
f
Figure 49. Power Gain and Drain Efficiency
versus Output Power and Quiescent Current
P1dB
(W)
P3dB
(W)
(MHz)
230
110
128
Figure 48. Output Power versus Input Power
80
70
60
50
40
24
23
22
21
24
22
20
18
16
14
V
= 50 Vdc, I = 100 mA, f = 230 MHz
DQ
I
= 100 mA, f = 230 MHz, Pulse Width = 100 sec, 20% Duty Cycle
DD
DQ
Pulse Width = 100 sec, 20% Duty Cycle
G
ps
D
20
19
18
17
50 V
45 V
30
20
10
40 V
35 V
V
= 30 V
DD
3
30
, OUTPUT POWER (WATTS) PEAK
300
0
25
50
75
100
125
150
P
, OUTPUT POWER (WATTS) PEAK
P
out
out
Figure 51. Power Gain versus Output Power
and Drain--Source Voltage
Figure 50. Power Gain and Drain Efficiency
versus Output Power
MRF101AN MRF101BN
RF Device Data
NXP Semiconductors
35
230 MHz FIXTURE (MRF101AN)
f
Z
Z
load
source
(MHz)
230
2.1 + j5.9
5.5 + j3.2
Z
Z
= Test circuit impedance as measured from
gate to ground.
source
= Test circuit impedance as measured from
drain to ground.
load
Device
Under
Test
Output
Matching
Network
Input
Matching
Network
50
50
Z
Z
load
source
Figure 52. Series Equivalent Source and Load Impedance — 230 MHz
MRF101AN MRF101BN
RF Device Data
NXP Semiconductors
36
PACKAGE DIMENSIONS
MRF101AN MRF101BN
RF Device Data
NXP Semiconductors
37
MRF101AN MRF101BN
RF Device Data
NXP Semiconductors
38
MRF101AN MRF101BN
RF Device Data
NXP Semiconductors
39
PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS
Refer to the following resources to aid your design process.
Application Notes
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
Electromigration MTTF Calculator
RF High Power Model
.s2p File
Development Tools
Printed Circuit Boards
Baseplate
To Download Resources Specific to a Given Part Number:
1. Go to http://www.nxp.com/RF
2. Search by part number
3. Click part number link
4. Choose the desired resource from the drop down menu
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
1
Nov. 2018
May 2019
Initial release of data sheet
Typical Performance table: updated values for 27 MHz, 50 MHz and 87.5–108 MHz reference circuits, p. 1
Load Mismatch/Ruggedness table, 40.68 MHz P : modulation signal corrected to CW, p. 1
in
Fig. 2, MTTF versus Junction Temperature — CW: added, p. 4
Added 13.56 MHz compact reference circuit, pp. 5–8
Added 27 MHz compact reference circuit, pp. 9–12
Table 13, row C12, C13: unit of measure/value in Description column changed from 10 nF to 0.01 F, p. 14
Added 50 MHz compact reference circuit, pp. 17–20
Added 81.36 MHz reference circuit, pp. 21–24
Added 87.5–108 MHz compact broadband reference circuit, pp. 25–29
Table 21, row C13: unit of measure/value in Description column changed from 10 nF to 0.01 F, p. 31
Fig. 42, CW Output Power versus Gate--Source Voltage at a Constant Input Power: added, p. 32
Package Outline Drawing: TO--220--3 package outline updated to Rev. A, pp. 37–39
MRF101AN MRF101BN
RF Device Data
NXP Semiconductors
40
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Document Number: MRF101AN
Rev. 1, 05/2019
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