A2T18H410-24SR6 [NXP]
Airfast RF Power LDMOS Transistor 1805-1880 MHz, 71 W Avg., 28 V;
| 型号： | A2T18H410-24SR6 |
| 厂家： | 
NXP |
| 描述： | Airfast RF Power LDMOS Transistor 1805-1880 MHz, 71 W Avg., 28 V |
| 文件： | 总16页 (文件大小：581K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Document Number: A2T18H410--24S
Rev. 0, 5/2015
Freescale Semiconductor
Technical Data
RF Power LDMOS Transistor
N--Channel Enhancement--Mode Lateral MOSFET
This 71 W asymmetrical Doherty RF power LDMOS transistor is designed for
cellular base station applications covering the frequency range of 1805 to
1880 MHz.
A2T18H410--24SR6
1800 MHz
1805–1880 MHz, 71 W AVG., 28 V
AIRFAST RF POWER LDMOS
TRANSISTOR
Typical Doherty Single--Carrier W--CDMA Performance: VDD = 28 Vdc,
IDQA = 800 mA, VGSB = 0.8 Vdc, Pout = 71 W Avg., Input Signal
PAR = 9.9 dB @ 0.01% Probability on CCDF.
G
Output PAR
(dB)
ACPR
(dBc)
ps
D
Frequency
1805 MHz
1840 MHz
1880 MHz
(dB)
17.4
17.5
17.6
(%)
51.2
50.1
49.3
7.9
8.3
8.0
–34.5
–36.9
–36.8
Features
Advanced High Performance In--Package Doherty
Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
NI--1230S--4L2L
Designed for Digital Predistortion Error Correction Systems
(1)
6
5
VBW
A
Carrier
RF /V
1
2
RF /V
outA DSA
inA GSA
RF /V
inB GSB
RF /V
outB DSB
4
3
Peaking
(1)
VBW
B
(Top View)
Figure 1. Pin Connections
1. Device cannot operate with the V current
DD
supplied through pin 3 and pin 6.
Freescale Semiconductor, Inc., 2015. All rights reserved.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Vdc
Vdc
Vdc
C
Drain--Source Voltage
V
–0.5, +65
–6.0, +10
32, +0
DSS
Gate--Source Voltage
V
GS
DD
Operating Voltage
V
Storage Temperature Range
Case Operating Temperature Range
T
stg
–65 to +150
–40 to +150
–40 to +225
T
C
C
(1,2)
Operating Junction Temperature Range
T
J
C
CW Operation @ T = 25C
Derate above 25C
CW
282
1.5
W
W/C
C
Table 2. Thermal Characteristics
(2,3)
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Case
R
0.24
C/W
JC
Case Temperature 72C, 71 W Avg., W--CDMA, 28 Vdc, I
= 800 mA, V
= 0.8 Vdc,
GSB
DQA
1840 MHz
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
Machine Model (per EIA/JESD22--A115)
Charge Device Model (per JESD22--C101)
2
B
IV
Table 4. Electrical Characteristics (T = 25C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
(4)
Off Characteristics
Zero Gate Voltage Drain Leakage Current
I
I
—
—
—
—
—
—
10
1
Adc
Adc
Adc
DSS
DSS
GSS
(V = 65 Vdc, V = 0 Vdc)
DS
GS
Zero Gate Voltage Drain Leakage Current
(V = 32 Vdc, V = 0 Vdc)
DS
GS
Gate--Source Leakage Current
(V = 5 Vdc, V = 0 Vdc)
I
1
GS
DS
On Characteristics -- Side A (Carrier)
Gate Threshold Voltage
V
V
1.4
2.2
0.1
1.5
2.6
2.3
3.0
0.3
Vdc
Vdc
Vdc
GS(th)
GS(Q)
DS(on)
(V = 10 Vdc, I = 160 Adc)
DS
D
Gate Quiescent Voltage
(V = 28 Vdc, I = 800 mAdc, Measured in Functional Test)
DD
DA
Drain--Source On--Voltage
(V = 10 Vdc, I = 1.6 Adc)
V
0.15
GS
D
On Characteristics -- Side B (Peaking)
Gate Threshold Voltage
V
0.8
0.1
1.2
1.6
0.3
Vdc
Vdc
GS(th)
(V = 10 Vdc, I = 270 Adc)
DS
D
Drain--Source On--Voltage
(V = 10 Vdc, I = 2.7 Adc)
V
0.15
DS(on)
GS
D
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf/calculators.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf and search for AN1955.
4. Each side of device measured separately.
(continued)
A2T18H410--24SR6
RF Device Data
Freescale Semiconductor, Inc.
2
Table 4. Electrical Characteristics (T = 25C unless otherwise noted) (continued)
A
Characteristic
Symbol
Min
Typ
Max
Unit
(1,2)
Functional Tests
(In Freescale Doherty Test Fixture, 50 ohm system) V = 28 Vdc, I
= 800 mA, V
= 0.8 Vdc, P = 71 W Avg.,
DD
DQA
GSB
out
f = 1805 MHz, Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. ACPR measured in
3.84 MHz Channel Bandwidth @ 5 MHz Offset.
Power Gain
G
16.5
47.0
7.4
17.4
51.2
7.9
19.5
—
dB
%
ps
D
Drain Efficiency
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF
Adjacent Channel Power Ratio
PAR
—
dB
dBc
ACPR
—
–34.5
–28.0
(2)
Load Mismatch (In Freescale Doherty Test Fixture, 50 ohm system) I
= 800 mA, V
= 0.8 Vdc, f = 1840 MHz
GSB
DQA
(3)
VSWR 10:1 at 32 Vdc, 440 W CW Output Power
No Device Degradation
(3)
(3 dB Input Overdrive from 376 W CW Rated Power)
(2)
Typical Performance
(In Freescale Doherty Test Fixture, 50 ohm system) V = 28 Vdc, I
= 800 mA, V
= 0.8 Vdc,
DD
DQA
GSB
1805–1880 MHz Bandwidth
(3)
P
P
@ 1 dB Compression Point, CW
P1dB
P3dB
—
—
—
355
457
—
—
—
W
W
out
out
(4)
@ 3 dB Compression Point
AM/PM
(Maximum value measured at the P3dB compression point across
–12.4
the 1805–1880 MHz frequency range)
VBW Resonance Point
VBW
—
90
—
MHz
res
(IMD Third Order Intermodulation Inflection Point)
Gain Flatness in 75 MHz Bandwidth @ P = 71 W Avg.
G
—
—
0.1
—
—
dB
out
F
Gain Variation over Temperature
G
0.0056
dB/C
(–30C to +85C)
Output Power Variation over Temperature
(–30C to +85C)
P1dB
—
0.0077
—
dB/C
(3)
Table 5. Ordering Information
Device
Tape and Reel Information
Package
A2T18H410--24SR6
R6 Suffix = 150 Units, 56 mm Tape Width, 13--inch Reel
NI--1230S--4L2L
1. Part internally matched both on input and output.
2. Measurements made with device in an asymmetrical Doherty configuration.
3. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table.
4. P3dB = P + 7.0 dB where P is the average output power measured using an unclipped W--CDMA single--carrier input signal where
avg
avg
output PAR is compressed to 7.0 dB @ 0.01% probability on CCDF.
A2T18H410--24SR6
RF Device Data
Freescale Semiconductor, Inc.
3
V
DDA
C17
C9
C10
R2
C19
C1
C2
D68602
C11
C12
C4
C3
Z1
R1
C13
C6
R3
C5
C8
A2T18H410
Rev. 4
C15
C16
C7
C14
C18
V
GGB
Figure 2. A2T18H410--24SR6 Test Circuit Component Layout
Table 6. A2T18H410--24SR6 Test Circuit Component Designations and Values
Part
Description
10 uF Chip Capacitors
Part Number
Manufacturer
TDK
C1, C7, C9, C14, C16, C19
C5750X7S2A106M230KB
C2, C8, C10, C15
12 pF Chip Capacitors
ATC100B120JT500XT
ATC100B1R2BT500XT
ATC100B6R2BT500XT
ATC100B1R0CT500XT
ATC100B5R1CT500XT
ATC100B4R7CT500XT
MCGPR63V477M13X26
CW12010T0050GBK
CRCW12062R7FKEA
X3C19P1-05S
ATC
C3
1.2 pF Chip Capacitor
ATC
C4, C6
C5, C11
C12
6.2 pF Chip Capacitors
ATC
1.0 pF Chip Capacitors
ATC
5.1 pF Chip Capacitor
ATC
C13
4.7 pF Chip Capacitor
ATC
C17, C18
R1
470 uF, 63 V Electrolytic Capacitors
50 Termination
Multicomp
ATC
R2, R3
Z1
2.7 , 1/4 W Chip Resistors
1700–2000 MHz Band, 5 dB Directional Coupler
Vishay
Anaren
MTL
PCB
Rogers RO4350B, 0.020, = 3.66
D68602
r
A2T18H410--24SR6
RF Device Data
Freescale Semiconductor, Inc.
4
TYPICAL CHARACTERISTICS
56
54
52
50
48
17.8
17.7
17.6
17.5
17.4
17.3
17.2
17.1
17
V
V
= 28 Vdc, P = 71 W (Avg.), I
GSB
= 800 mA
DD
out
DQA
= 0.8 Vdc, Single--Carrier W--CDMA, 3.84 MHz
Channel Bandwidth, Input Signal PAR = 9.9 dB @
0.01% Probability on CCDF
D
G
ps
–1.4
–1.6
–1.8
–2
–27
–30
–33
PARC
–36
–39
ACPR
–2.2
–2.4
16.9
16.8
–42
1760 1780 1800 1820 1840 1860 1880 1900 1920
f, FREQUENCY (MHz)
Figure 3. Single--Carrier Output Peak--to--Average Ratio Compression
(PARC) Broadband Performance @ Pout = 71 Watts Avg.
–10
V
V
= 28 Vdc, P = 8 W (PEP), I
= 800 mA
DD
out
DQA
= 0.8 Vdc, Two--Tone Measurements
GSB
–20
(f1 + f2)/2 = Center Frequency of 1840 MHz
–30
–40
–50
IM3--L
IM3--U
IM5--U
IM5--L
IM7--U
IM7--L
–60
–70
1
10
TWO--TONE SPACING (MHz)
100
500
Figure 4. Intermodulation Distortion Products
versus Two--Tone Spacing
17.8
17.6
1
0
60
–30
V
= 28 Vdc, I
= 800 mA, V
= 0.8 Vdc
GSB
DD
DQA
f = 1840 MHz, Single--Carrier W--CDMA
3.84 MHz Channel Bandwidth
55
50
45
40
35
30
–32
–34
–36
–38
–40
–42
–1
–2
–3
–4
–5
17.4
17.2
17
–1 dB = 55 W
D
G
ps
ACPR
–2 dB = 78.1 W
–3 dB = 100 W
PARC
16.8
16.6
Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF
50 75 100 125
, OUTPUT POWER (WATTS)
25
150
P
out
Figure 5. Output Peak--to--Average Ratio
Compression (PARC) versus Output Power
A2T18H410--24SR6
RF Device Data
Freescale Semiconductor, Inc.
5
TYPICAL CHARACTERISTICS
60
50
40
30
20
10
0
22
20
18
16
14
12
10
0
V
= 28 Vdc, I
= 800 mA, V
= 0.8 Vdc
GSB
DD
DQA
D
Single--Carrier W--CDMA
–10
–20
–30
–40
–50
–60
1880 MHz
1805 MHz
1840 MHz
G
ps
1805 MHz
1880 MHz
ACPR
1805 MHz
1840 MHz
1880 MHz
1840 MHz
3.84 MHz Channel Bandwidth, Input Signal
PAR = 9.9 dB @ 0.01% Probability on CCDF
1
10
100
500
P
, OUTPUT POWER (WATTS) AVG.
out
Figure 6. Single--Carrier W--CDMA Power Gain, Drain
Efficiency and ACPR versus Output Power
22
20
Gain
18
16
14
12
10
V
P
= 28 Vdc
= 0 dBm
= 800 mA
= 0.8 Vdc
DD
in
I
DQA
V
GSB
1600 1680 1760 1840 1920 2000 2080 2160 2240
f, FREQUENCY (MHz)
Figure 7. Broadband Frequency Response
A2T18H410--24SR6
RF Device Data
Freescale Semiconductor, Inc.
6
Table 7. Carrier Side Load Pull Performance — Maximum Power Tuning
V
= 28 Vdc, I
= 785 mA, Pulsed CW, 10 sec(on), 10% Duty Cycle
DD
DQA
Max Output Power
P1dB
(1)
Z
AM/PM
()
f
Z
Z
in
()
load
()
D
source
()
(%)
58.4
58.3
57.2
Gain (dB)
18.7
(dBm)
52.6
(W)
181
183
(MHz)
1805
1840
1880
1.32 – j3.98
1.57 – j4.28
2.23 – j4.77
1.36 + j3.59
1.01 – j3.41
0.98 – j3.56
0.98 – j3.75
–12
–12
–12
1.50 + j3.86
1.99 + j4.16
18.7
52.6
18.6
52.6
181
Max Output Power
P3dB
(2)
Z
()
AM/PM
()
f
Z
Z
()
load
D
source
()
in
(%)
59.4
59.2
58.3
Gain (dB)
(dBm)
(W)
(MHz)
1805
1840
1880
1.32 – j3.98
1.22 + j3.74
1.02 – j3.56
0.99 – j3.72
1.00 – j3.90
16.5
53.3
215
–15
–15
–16
1.57 – j4.28
2.23 – j4.77
1.37 + j4.04
1.87 + j4.43
16.5
16.4
53.4
53.3
217
214
(1) Load impedance for optimum P1dB power.
(2) Load impedance for optimum P3dB power.
Z
Z
Z
= Measured impedance presented to the input of the device at the package reference plane.
= Impedance as measured from gate contact to ground.
= Measured impedance presented to the output of the device at the package reference plane.
source
in
load
Table 8. Carrier Side Load Pull Performance — Maximum Drain Efficiency Tuning
V
= 28 Vdc, I
= 785 mA, Pulsed CW, 10 sec(on), 10% Duty Cycle
DD
DQA
Max Drain Efficiency
P1dB
(1)
Z
AM/PM
()
f
Z
Z
in
()
load
()
D
source
()
(%)
72.1
71.1
70.0
Gain (dB)
(dBm)
(W)
(MHz)
1805
1840
1880
1.32 – j3.98
1.57 – j4.28
2.23 – j4.77
1.35 + j3.89
2.22 – j2.08
2.07 – j2.49
1.93 – j2.67
22.4
49.9
98
–19
–17
–18
1.55 + j4.11
2.11 + j4.44
22.0
21.8
50.3
50.4
108
109
Max Drain Efficiency
P3dB
(2)
Z
()
AM/PM
()
f
Z
Z
()
load
D
source
()
in
(%)
73.3
72.5
71.4
Gain (dB)
(dBm)
(W)
(MHz)
1805
1840
1880
1.32 – j3.98
1.20 + j3.91
2.04 – j2.31
1.96 – j2.52
1.93 – j2.64
20.1
51.1
128
–25
–24
–24
1.57 – j4.28
2.23 – j4.77
1.38 + j4.21
1.94 + j4.64
19.9
19.9
51.2
51.0
130
127
(1) Load impedance for optimum P1dB efficiency.
(2) Load impedance for optimum P3dB efficiency.
Z
Z
Z
= Measured impedance presented to the input of the device at the package reference plane.
= Impedance as measured from gate contact to ground.
= Measured impedance presented to the output of the device at the package reference plane.
source
in
load
Input Load Pull
Tuner and Test
Circuit
Output Load Pull
Tuner and Test
Circuit
Device
Under
Test
Z
Z
in
Z
load
source
A2T18H410--24SR6
RF Device Data
Freescale Semiconductor, Inc.
7
Table 9. Peaking Side Load Pull Performance — Maximum Power Tuning
V
= 28 Vdc, V
= 0.8 mA, Pulsed CW, 10 sec(on), 10% Duty Cycle
DD
GSB
Max Output Power
P1dB
(1)
Z
AM/PM
()
f
Z
Z
in
()
load
()
D
source
()
(%)
57.4
54.6
56.4
Gain (dB)
15.9
(dBm)
54.9
(W)
312
321
(MHz)
1805
1840
1880
1.32 – j3.98
1.55 + j4.16
1.38 – j3.61
1.22 – j3.80
1.40 – j3.92
–33
–32
–33
1.84 – j4.30
2.67 – j4.46
1.90 + j4.53
2.83 + j4.90
15.6
55.1
16.0
55.0
315
Max Output Power
P3dB
(2)
Z
()
AM/PM
()
f
Z
Z
()
load
D
source
()
in
(%)
59.3
57.1
57.3
Gain (dB)
(dBm)
(W)
(MHz)
1805
1840
1880
1.32 – j3.98
1.59 + j4.36
1.35 – j3.73
1.19 – j3.91
1.38 – j4.21
13.7
55.7
370
–40
–39
–39
1.84 – j4.30
2.67 – j4.46
2.01 + j4.79
3.20 + j5.21
13.4
13.6
55.8
55.7
380
372
(1) Load impedance for optimum P1dB power.
(2) Load impedance for optimum P3dB power.
Z
Z
Z
= Measured impedance presented to the input of the device at the package reference plane.
= Impedance as measured from gate contact to ground.
= Measured impedance presented to the output of the device at the package reference plane.
source
in
load
Table 10. Peaking Side Load Pull Performance — Maximum Drain Efficiency Tuning
V
= 28 Vdc, V
= 0.8 mA, Pulsed CW, 10 sec(on), 10% Duty Cycle
DD
GSB
Max Drain Efficiency
P1dB
(1)
Z
AM/PM
()
f
Z
Z
in
()
load
()
D
source
()
(%)
69.3
69.4
68.8
Gain (dB)
(dBm)
(W)
(MHz)
1805
1840
1880
1.32 – j3.98
1.39 + j4.15
3.59 – j2.93
3.49 – j2.75
3.12 – j2.36
17.2
53.0
201
–41
–40
–41
1.84 – j4.30
2.67 – j4.46
1.67 + j4.51
2.45 + j4.92
17.2
17.3
53.1
53.0
204
199
Max Drain Efficiency
P3dB
(2)
Z
()
AM/PM
()
f
Z
Z
()
load
D
source
()
in
(%)
66.3
66.2
66.9
Gain (dB)
(dBm)
(W)
(MHz)
1805
1840
1880
1.32 – j3.98
1.52 + j4.38
3.30 – j3.71
2.68 – j3.69
2.97 – j3.26
14.8
53.9
248
–47
–45
–47
1.84 – j4.30
2.67 – j4.46
1.91 + j4.81
2.96 + j5.27
14.8
15.0
54.7
54.3
292
269
(1) Load impedance for optimum P1dB efficiency.
(2) Load impedance for optimum P3dB efficiency.
Z
Z
Z
= Measured impedance presented to the input of the device at the package reference plane.
= Impedance as measured from gate contact to ground.
= Measured impedance presented to the output of the device at the package reference plane.
source
in
load
Input Load Pull
Tuner and Test
Circuit
Output Load Pull
Tuner and Test
Circuit
Device
Under
Test
Z
Z
in
Z
load
source
A2T18H410--24SR6
RF Device Data
Freescale Semiconductor, Inc.
8
P1dB -- TYPICAL CARRIER SIDE LOAD PULL CONTOURS — 1840 MHz
–1
–1
–1.5
–2
–1.5
48.5
49
–2
49.5
E
E
E
–2.5
–3
–2.5
–3
50
50.5
51
70
68
66
64
51.5
–3.5
–4
–3.5
–4
P
P
P
1
52.5
52
62
60
56
58
–4.5
–5
–4.5
–5
1.5
2
2.5
3
1.5
2
2.5
3
0.5
3.5
0.5
1
3.5
REAL ()
REAL ()
Figure 8. P1dB Load Pull Output Power Contours (dBm)
Figure 9. P1dB Load Pull Efficiency Contours (%)
–1
–1
-- 1 0
–10
23
–1.5
–1.5
–2
–16
–22
–20
22.5
–2
–24
–18
–12
–14
E
E
E
–2.5
–3
–2.5
–3
22
21.5
21
–3.5
–4
–3.5
–4
P
P
P
P
20.5
20
19.5
19
–4.5
–5
–4.5
–5
–10
–10
1.5
2
2.5
3
1.5
2
2.5
3
0.5
1
3.5
0.5
1
3.5
REAL ()
REAL ()
Figure 11. P1dB Load Pull AM/PM Contours ()
Figure 10. P1dB Load Pull Gain Contours (dB)
NOTE:
P
E
= Maximum Output Power
= Maximum Drain Efficiency
A2T18H410--24SR6
RF Device Data
Freescale Semiconductor, Inc.
9
P3dB -- TYPICAL CARRIER SIDE LOAD PULL CONTOURS — 1840 MHz
–1
–1
66
–1.5
–2
–1.5
–2
49.5
50
72
70
50.5
51
E
E
E
E
–2.5
–3
–2.5
–3
68
51.5
66
64
–3.5
–4
–3.5
–4
P
P
P
P
53
52.5
52
62
60
–4.5
–5
–4.5
–5
58
56
1.5
2
2.5
3
1.5
2
2.5
3
0.5
1
3.5
0.5
1
3.5
REAL ()
REAL ()
Figure 12. P3dB Load Pull Output Power Contours (dBm)
Figure 13. P3dB Load Pull Efficiency Contours (%)
–1
–1
–18
–20
–22
–1.5
–1.5
–2
–24
–28
20.5
–30
–26
–2
E
E
E
–2.5
–3
E
–2.5
–3
20
19.5
19
–16
–3.5
–4
–3.5
–4
PP
P
P
18.5
18
–14
17.5
16.5
17
–4.5
–5
–4.5
–5
1.5
2
2.5
3
1.5
2
2.5
3
0.5
1
3.5
0.5
1
3.5
REAL ()
REAL ()
Figure 15. P3dB Load Pull AM/PM Contours ()
Figure 14. P3dB Load Pull Gain Contours (dB)
NOTE:
P
E
= Maximum Output Power
= Maximum Drain Efficiency
A2T18H410--24SR6
RF Device Data
Freescale Semiconductor, Inc.
10
P1dB – TYPICAL PEAKING LOAD PULL CONTOURS — 1840 MHz
0
–1
–2
0
62
51
–1
51.5
–2
52
68
66
64
E
E
EE
52.5
–3
–4
–5
–3
–4
–5
53
62
53.5
54
54.5
P
P
P
P
60
58
55
54
56
58
56
1
1.5
2
2.5
3
3.5
4
4.5
5
5.5
6
1
1.5
2
2.5
3
3.5
4
4.5
5
5.5
6
REAL ()
REAL ()
Figure 16. P1dB Load Pull Output Power Contours (dBm)
Figure 17. P1dB Load Pull Efficiency Contours (%)
0
0
–1
–1
18
–44
–28
–30
–2
–2
17.5
17
–42
–38
E
E
E
–3
–4
–5
–3
–4
–5
–40
16.5
P
P
P
P
–36
15
–34
16
16
5.5
15.5
–32
1.5
1
1.5
2
2.5
3
3.5
4
4.5
5
6
1
2
2.5
3
3.5
4
4.5
5
5.5
6
REAL ()
REAL ()
Figure 18. P1dB Load Pull Gain Contours (dB)
Figure 19. P1dB Load Pull AM/PM Contours ()
NOTE:
P
E
= Maximum Output Power
= Maximum Drain Efficiency
A2T18H410--24SR6
RF Device Data
Freescale Semiconductor, Inc.
11
P3dB -- TYPICAL PEAKING SIDE LOAD PULL CONTOURS — 1840 MHz
–2
–2
52.5
52
50
–2.5
–3
–2.5
52
53.5
53
52.5
–3
–3.5
–4
66
–3.5
–4
E
E
E
E
62
64
54
P
P
P
P
60
58
55.5
55
54.5
–4.5
–5
–4.5
–5
56
–5.5
–6
–5.5
–6
54
52
52
50
3
4
5
6
3
4
5
6
1
2
7
1
2
7
REAL ()
REAL ()
Figure 20. P3dB Load Pull Output Power Contours (dBm)
Figure 21. P3dB Load Pull Efficiency Contours (%)
–2
–2
–50
15.5
–2.5
–2.5
–3
–50
–48
–46
–3
15
–3.5
–3.5
–4
E
E
E
E
P
P
P
P
–4
14.5
–44
–42
–40
–4.5
–5
–4.5
–5
14
12.5
12
13.5
13
–36
–34
–38
–5.5
–6
–5.5
–6
3
4
5
6
3
4
5
6
1
2
7
1
2
7
REAL ()
REAL ()
Figure 23. P3dB Load Pull AM/PM Contours ()
Figure 22. P3dB Load Pull Gain Contours (dB)
NOTE:
P
E
= Maximum Output Power
= Maximum Drain Efficiency
A2T18H410--24SR6
RF Device Data
Freescale Semiconductor, Inc.
12
PACKAGE DIMENSIONS
A2T18H410--24SR6
RF Device Data
Freescale Semiconductor, Inc.
13
A2T18H410--24SR6
RF Device Data
Freescale Semiconductor, Inc.
14
PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS
Refer to the following resources to aid your design process.
Application Notes
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
Electromigration MTTF Calculator
RF High Power Model
.s2p File
Development Tools
Printed Circuit Boards
To Download Resources Specific to a Given Part Number:
1. Go to http://www.freescale.com/rf
2. Search by part number
3. Click part number link
4. Choose the desired resource from the drop down menu
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
May 2015
Initial Release of Data Sheet
A2T18H410--24SR6
RF Device Data
Freescale Semiconductor, Inc.
15
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Document Number: A2T18H410--24S
Rev. 0, 5/2015
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