A3I25D080N [NXP]
RF LDMOS Wideband Integrated Power Amplifiers;
| 型号： | A3I25D080N |
| 厂家： | 
NXP |
| 描述： | RF LDMOS Wideband Integrated Power Amplifiers |
| 文件： | 总14页 (文件大小：470K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Document Number: A3I25D080N
Rev. 0, 03/2021
NXP Semiconductors
Technical Data
RF LDMOS Wideband Integrated
Power Amplifiers
A3I25D080N
A3I25D080GN
The A3I25D080N integrated Doherty circuit is designed with on--chip
matching that makes it usable from 2300 to 2690 MHz. This multi--stage
structure is rated for 20 to 32 V operation and covers all typical cellular base
station modulation formats.
2300–2690 MHz, 8.3 W Avg., 28 V
AIRFAST RF LDMOS
INTEGRATED POWER AMPLIFIERS
2600 MHz
Typical Doherty Single--Carrier W--CDMA Characterization Performance:
DD = 28 Vdc, IDQ(Carrier) = 175 mA, VGS(Peaking) = 1.85 Vdc, Pout
8.5 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.(1)
V
=
G
PAE
(%)
ACPR
(dBc)
ps
Frequency
2496 MHz
2590 MHz
2690 MHz
(dB)
29.7
29.6
29.4
TO--270WB--17
PLASTIC
A3I25D080N
36.7
37.0
36.1
–37.9
–37.5
–36.2
2300 MHz
TO--270WBG--17
PLASTIC
A3I25D080GN
Typical Doherty Single--Carrier W--CDMA Performance: VDD = 28 Vdc,
IDQ(Carrier) = 182 mA, VGS(Peaking) = 2.42 Vdc, Pout = 8.9 W Avg., Input
Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.(1)
G
PAE
(%)
ACPR
(dBc)
ps
Frequency
2300 MHz
2350 MHz
2400 MHz
(dB)
30.3
30.2
30.2
36.1
35.5
35.2
–36.2
–38.7
–39.5
Features
Integrated Doherty splitter and combiner
RF decoupled drain pins reduce overall board space
On--chip matching (50 ohm input, DC blocked)
Integrated quiescent current temperature compensation with
enable/disable function (2)
1. All data measured in fixture with device soldered to heatsink.
2. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family, and to AN1987, Quiescent Current Control
for the RF Integrated Circuit Device Family. Go to http://www.nxp.com/RF and search for AN1977 or AN1987.
2021 NXP B.V.
V
DS1(C+P)A
RF
inA
V
1
2
DS1(C+P)A
V
V
N.C.
RF /V
17
16
GS1+2(C)A
GS1+2(P)A
RF /V
outA DS2A
3
N.C.
4
outA DS2A
RF
5
inA
N.C.
N.C.
V
GS1+2(C)A
6
Quiescent Current
N.C.
15
7
Temperature Compensation
V
V
GS1+2(P)A
RF
8
inB
N.C.
RF /V
outB DS2B
9
14
13
GS1+2(P)B
V
V
10
11
12
GS1+2(P)B
Quiescent Current
GS1+2(C)B
DS1(C+P)B
N.C.
Temperature Compensation
V
V
GS1+2(C)B
(Top View)
RF /V
outB DS2B
Note: Exposed backside of the package is
the source terminal for the transistor.
RF
inB
V
DS1(C+P)B
Figure 1. Functional Block Diagram
Figure 2. Pin Connections
Table 1. Maximum Ratings
Rating
Symbol
Value
–0.5, +65
–0.5, +10
32, +0
Unit
Vdc
Vdc
Vdc
C
Drain--Source Voltage
V
DSS
Gate--Source Voltage
V
GS
DD
Operating Voltage
V
Storage Temperature Range
Case Operating Temperature Range
T
stg
–65 to +150
–40 to +150
–40 to +225
23
T
C
C
(1)
Operating Junction Temperature Range
Input Power
T
J
C
P
dBm
in
Table 2. Thermal Characteristics
(2)
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Case
R
C/W
JC
Case Temperature 85C, 8.3 W, 2590 MHz
Stage 1, 28 Vdc, I
Stage 2, 28 Vdc, V
= 175 mA
5.6
1.2
DQ(Carrier)
= 1.92 Vdc
GS(Peaking)
Table 3. ESD Protection Characteristics
Test Methodology
Class
1B
Human Body Model (per JS--001--2017)
Charge Device Model (per JS--002--2014)
C2
Table 4. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD22--A113, IPC/JEDEC J--STD--020
3
260
C
1. Continuous use at maximum temperature will affect MTTF.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.nxp.com/RF and search for AN1955.
A3I25D080N A3I25D080GN
RF Device Data
NXP Semiconductors
2
Table 5. Electrical Characteristics (T = 25C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
Carrier Stage 1 and Stage 2 — Off Characteristics
Zero Gate Voltage Drain Leakage Current
(V = 65 Vdc, V = 0 Vdc)
I
—
—
—
—
10
1
Adc
Adc
DSS(TOTAL)
DS
GS
Zero Gate Voltage Drain Leakage Current
(V = 32 Vdc, V = 0 Vdc)
I
DSS(TOTAL)
DS
GS
Carrier Stage 1 and Stage 2 — On Characteristics
(1)
Gate Threshold Voltage
V
V
0.9
—
1.3
2.0
4.9
1.9
—
Vdc
Vdc
Vdc
GSC(th)
GSC(Q)
GGC(Q)
(V = 10 Vdc, I = 16 Adc)
DS
D
Gate Quiescent Voltage
(V = 28 Vdc, I
= 175 mAdc)
DQ(Carrier)
DS
Fixture Gate Quiescent Voltage
(V = 28 Vdc, I = 175 mAdc, Measured in Functional Test)
V
4.2
5.7
DD
DQ(Carrier)
Peaking Stage 1 and Stage 2 — On Characteristics
(1)
Gate Threshold Voltage
V
0.9
1.4
2.1
Vdc
GSP(th)
(V = 10 Vdc, I = 31 Adc)
DS
D
1. Each side of device measured separately.
(continued)
A3I25D080N A3I25D080GN
RF Device Data
NXP Semiconductors
3
Table 5. Electrical Characteristics (T = 25C unless otherwise noted) (continued)
A
Characteristic
Symbol
Min
Typ
Max
= 175 mA, V = 1.92 Vdc,
GS(Peaking)
Unit
(1,2)
Functional Tests
(In NXP Production Test Fixture, 50 ohm system) V = 28 Vdc, I
DD
DQ(Carrier)
P
= 8.3 W Avg., f = 2690 MHz, Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on
out
CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset.
Power Gain
G
27.2
34.0
—
29.2
35.6
–35.5
71.6
32.0
—
dB
%
ps
Power Added Efficiency
PAE
ACPR
P3dB
Adjacent Channel Power Ratio
–33.0
—
dBc
W
P
@ 3 dB Compression Point, CW
56.2
out
(3)
Wideband Ruggedness (In NXP Characterization Test Fixture, 50 ohm system) I
= 175 mA, V
= 1.85 Vdc,
GS(Peaking)
DQ(Carrier)
f = 2600 MHz, Additive White Gaussian Noise (AWGN) with 10 dB PAR
ISBW of 400 MHz at 30 Vdc, 16.6 W Avg. Modulated Output Power
(3 dB Input Overdrive from 8.3 W Avg. Modulated Output Power)
No Device Degradation
(3)
Typical Performance
(In NXP Characterization Test Fixture, 50 ohm system) V = 28 Vdc, I
= 175 mA, V
= 1.85 Vdc,
DD
DQ(Carrier)
GS(Peaking)
2496–2690 MHz Bandwidth
(4)
P
@ 3 dB Compression Point
P3dB
—
85.0
–14
—
—
W
out
AM/PM
—
(Maximum value measured at the P3dB compression point across
the 2496–2690 MHz frequency range.)
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
VBW
—
260
—
MHz
%
res
(5)
Quiescent Current Accuracy over Temperature
I
QT
with 2.4 k Gate Feed Resistors (--40C to +85C)
with 2.4 k Gate Feed Resistors (--40C to +85C)
Stage 1
Stage 2
—
—
9.52
12.79
—
—
Gain Flatness in 194 MHz Bandwidth @ P = 8.5 W Avg.
G
—
—
0.3
—
—
dB
out
F
Gain Variation over Temperature
G
0.032
dB/C
(–40C to +85C)
Output Power Variation over Temperature
P3dB
—
0.013
—
dB/C
(–40C to +85C)
Table 6. Ordering Information
Device
A3I25D080NR1
A3I25D080GNR1
Tape and Reel Information
Package
TO--270WB--17
R1 Suffix = 500 Units, 44 mm Tape Width, 13--inch Reel
TO--270WBG--17
1. Part internally input and output matched.
2. Measurements made with device in straight lead configuration before any lead forming operation is applied. Lead forming is used for gull
wing (GN) parts.
3. All data measured in fixture with device soldered to heatsink.
4. P3dB = P
+ 7.0 dB where P
is the average output power measured using an unclipped W--CDMA single--carrier input signal
avg
avg
where output PAR is compressed to 7.0 dB @ 0.01% probability on CCDF.
5. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family, and to AN1987, Quiescent Current Control
for the RF Integrated Circuit Device Family. Go to http://www.nxp.com/RF and search for AN1977 or AN1987.
A3I25D080N A3I25D080GN
RF Device Data
NXP Semiconductors
4
V
DD1A
V
DD2A
V
GG1A
V
GG2A
A3l25D080N
Rev. 3
C16
C10
C8
C12
C14
C18
C19
C6
R1
R2
R5
C1
C2
C5
C4
C3
Q1
Z1
Z2
R4
R3
R6
C7
C21
C20
C15
C13
C9
C11
C17
V
GG2B
V
GG1B
V
DD2B
V
DD1B
D133513
aaa--039007
Note: All data measured in fixture with device soldered to heatsink.
Figure 3. A3I25D080N Characterization Test Circuit Component Layout — 2496–2690 MHz
Table 7. A3I25D080N Characterization Test Circuit Component Designations and Values — 2496–2690 MHz
Part
Description
Part Number
Manufacturer
C1, C2
2.4 pF Chip Capacitor
600L2R4AT200T
ATC
C3, C4
1.2 pF Chip Capacitor
600F1R2BT250XT
600F0R2BT250XT
600F200JT250XT
GRM32EC72A106KE05L
GRM31CR71H475KA12L
A3I25D080N
ATC
C5
0.2 pF Chip Capacitor
ATC
C6, C7, C8, C9
20 pF Chip Capacitor
ATC
C10, C11, C12, C13, C14, C15, C16, C17
10 F Chip Capacitor
Murata
Murata
NXP
C18, C19, C20, C21
4.7 F Chip Capacitor
Q1
RF Power LDMOS Transistor
2.4 k, 1/4 W Chip Resistor
50 , 8 W Termination Chip Resistor
2300–2900 MHz, 90, 3 dB Hybrid Coupler
R1, R2, R3, R4
R5, R6
Z1, Z2
CRCW12062K40FKEA
C8A50Z4B
Vishay
Anaren
Anaren
MTL
X3C26P1-03S
PCB
Rogers RO4350B, 0.020, = 3.66
D133513
r
A3I25D080N A3I25D080GN
RF Device Data
NXP Semiconductors
5
V
DD1A
V
DD2A
V
GG1A
V
GG2A
A3l25D080N
Rev. 3
C13
C11
C9
C17
C15
C21
C20
C5
C1
C2
C6
C7
R1
R2
R5
C3
C4
cut out
area
Z1
Z2
R4
R3
R6
C8
C19
C22
C16
C18
C10
C12
C14
V
GG2B
V
GG1B
V
DD2B
V
DD1B
D133513
aaa--039008
Figure 4. A3I25D080N Test Circuit Component Layout — 2300–2400 MHz
Table 8. A3I25D080N Test Circuit Component Designations and Values — 2300–2400 MHz
Part
Description
Part Number
Manufacturer
C1, C2
2.4 pF Chip Capacitor
600L2R4AT200T
600F1R1BT250XT
600F0R8BT250XT
600F200JT250XT
GRM32EC72A106KE05L
GRM31CR71H475KA12L
CRCW12062K40FKEA
C8A50Z4B
ATC
C3, C4
1.1 pF Chip Capacitor
ATC
C5, C6
0.8 pF Chip Capacitor
ATC
C7, C8, C9, C10
20 pF Chip Capacitor
ATC
C11, C12, C13, C14, C15, C16, C17, C18
10 F Chip Capacitor
Murata
Murata
Vishay
Anaren
Anaren
MTL
C19, C20, C21, C22
R1, R2, R3, R4
R5, R6
4.7 F Chip Capacitor
2.4 k, 1/4 W Chip Resistor
50 , 8 W Termination Chip Resistor
2300–2900 MHz, 90, 3 dB Hybrid Coupler
Z1, Z2
X3C26P1-03S
PCB
Rogers RO4350B, 0.020, = 3.66
D133513
r
A3I25D080N A3I25D080GN
RF Device Data
NXP Semiconductors
6
PACKAGE INFORMATION
A3I25D080N A3I25D080GN
RF Device Data
NXP Semiconductors
7
A3I25D080N A3I25D080GN
RF Device Data
NXP Semiconductors
8
A3I25D080N A3I25D080GN
RF Device Data
NXP Semiconductors
9
A3I25D080N A3I25D080GN
RF Device Data
NXP Semiconductors
10
A3I25D080N A3I25D080GN
RF Device Data
NXP Semiconductors
11
A3I25D080N A3I25D080GN
RF Device Data
NXP Semiconductors
12
PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS
Refer to the following resources to aid your design process.
Application Notes
AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
AN1977: Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family
AN1987: Quiescent Current Control for the RF Integrated Circuit Device Family
Software
.s2p File
Development Tools
Printed Circuit Boards
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
Mar. 2021
Initial release of data sheet
A3I25D080N A3I25D080GN
RF Device Data
NXP Semiconductors
13
Information in this document is provided solely to enable system and software
implementers to use NXP products. There are no express or implied copyright licenses
granted hereunder to design or fabricate any integrated circuits based on the information
in this document. NXP reserves the right to make changes without further notice to any
products herein.
How to Reach Us:
Home Page:
nxp.com
Web Support:
nxp.com/support
NXP makes no warranty, representation, or guarantee regarding the suitability of its
products for any particular purpose, nor does NXP assume any liability arising out of the
application or use of any product or circuit, and specifically disclaims any and all liability,
including without limitation consequential or incidental damages. “Typical” parameters
that may be provided in NXP data sheets and/or specifications can and do vary in
different applications, and actual performance may vary over time. All operating
parameters, including “typicals,” must be validated for each customer application by
customer’s technical experts. NXP does not convey any license under its patent rights
nor the rights of others. NXP sells products pursuant to standard terms and conditions of
sale, which can be found at the following address: nxp.com/SalesTermsandConditions.
NXP, the NXP logo and Airfast are trademarks of NXP B.V. All other product or service
names are the property of their respective owners.
E 2021 NXP B.V.
Document Number: A3I25D080N
Rev. 0, 03/2021
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