ACT108W-600E [NXP]
AC Thyristor power switch; AC晶闸管电源开关
| 型号： | ACT108W-600E |
| 厂家： | 
NXP |
| 描述： | AC Thyristor power switch |
| 文件： | 总13页 (文件大小：371K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ACT108W-600E
AC Thyristor power switch
Rev. 03 — 21 October 2009
Product data sheet
1. Product profile
1.1 General description
AC Thyristor power switch in a SOT223 surface-mountable plastic package with
self-protective capabilities against low and high energy transients
1.2 Features and benefits
Common terminal on mounting base
allows multiple ACTs on shared
cooling pad
Safe clamping of low energy
over-voltage transients
Self-protective turn-on during high
Exclusive negative gate triggering
Full cycle AC conduction
energy voltage transients
Suface-mountable package
Very high noise immunity
Remote gate separates the gate driver
from the effects of the load current
1.3 Applications
Contactors, circuit breakers, valves,
Lower-power highly inductive, resistive
dispensers and door locks
and safety loads
Fan motor circuits
Pump motor circuits
1.4 Quick reference data
Table 1.
Quick reference
Symbol Parameter
Conditions
Min
Typ
Max Unit
VDRM
IGT
repetitive peak
off-state voltage
-
-
600
V
gate trigger current
VD = 12 V; IT = 100 mA;
LD+ G-; Tj = 25 °C;
see Figure 10
1
-
10
mA
VD = 12 V; IT = 100 mA;
LD- G-; Tj = 25 °C
1
-
-
-
10
0.8
-
mA
A
IT(RMS)
dVD/dt
RMS on-state
current
full sine wave; Tsp ≤ 112 °C;
see Figure 3, 1 and 2
-
rate of rise of
VDM = 402 V; Tj = 125 °C;
gate open circuit;
see Figure 14
1000
V/µs
off-state voltage
ACT108W-600E
NXP Semiconductors
AC Thyristor power switch
Table 1.
Quick reference …continued
Symbol Parameter
Conditions
Min
Typ
Max Unit
VCL
VPP
VT
clamping voltage
ICL = 100 mA; tp = 1 ms;
Tj ≤ 125 °C; see Figure 17
650
-
-
V
peak pulse voltage
on-state voltage
Tj = 25 °C; non-repetitive,
off-state; see Figure 6
-
-
-
-
2
kV
V
IT = 1.1 A; see Figure 13
1.3
2. Pinning information
Table 2.
Pinning information
Pin
1
Symbol Description
Simplified outline
Graphic symbol
LD
CM
G
load
LD
4
2
common
gate
3
G
mb
CM
mounting base; connected to
common
CM
001aaj924
1
2
3
SOT223 (SC-73)
3. Ordering information
Table 3.
Ordering information
Type number
Package
Name
Description
Version
ACT108W-600E
SC-73
plastic surface-mounted package with increased heatsink; 4 leads
SOT223
ACT108W-600E_3
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 — 21 October 2009
2 of 13
ACT108W-600E
NXP Semiconductors
AC Thyristor power switch
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VDRM
repetitive peak off-state
voltage
-
600
V
IT(RMS)
ITSM
RMS on-state current
full sine wave; Tsp ≤ 112 °C; see Figure 3, 1 and 2
-
-
-
0.8
8.8
8
A
A
A
non-repetitive peak
on-state current
full sine wave; Tj(init) = 25 °C; tp = 16.7 ms
full sine wave; Tj(init) = 25 °C; tp = 20 ms;
see Figure 4 and 5
I2t
I2t for fusing
tp = 10 ms; sin-wave pulse
-
-
0.32
100
A2s
dIT/dt
rate of rise of on-state IT = 1 A; IG = 20 mA; dIG/dt = 0.2 A/µs
current
A/µs
IGM
peak gate current
peak gate voltage
average gate power
storage temperature
junction temperature
peak pulse voltage
t = 20 μs
-
1
A
VGM
PG(AV)
Tstg
Tj
positive applied gate voltage
over any 20 ms period
-
15
0.1
150
125
2
V
-
W
°C
°C
kV
-40
-
-
VPP
Tj = 25 °C; non-repetitive, off-state; see Figure 6
003aac822
003aac807
8
1
I
T(RMS)
(A)
I
T(RMS)
(A)
0.8
0.6
0.4
0.2
0
6
4
2
0
−1
−2
10
1
10
−50
0
50
100
150
(°C)
10
T
surge duration (s)
sp
Fig 2. RMS on-state current as a function of solder
point temperature; maximum values
Fig 1. RMS on-state current as a function of surge
duration; maximum values
ACT108W-600E_3
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 — 21 October 2009
3 of 13
ACT108W-600E
NXP Semiconductors
AC Thyristor power switch
003aac803
1.0
P
(W)
tot
α = 180°
α
0.8
α
0.6
0.4
0.2
0
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
I
(A)
T(RMS)
Fig 3. Total power dissipation as a function of RMS on-state current; maximum values
003aac804
10
I
TSM
(A)
8
6
4
2
0
I
I
TSM
T
t
1/f
T
= 25 °C max
j(init)
2
3
1
10
10
10
number of cycles
Fig 4. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
values
ACT108W-600E_3
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 — 21 October 2009
4 of 13
ACT108W-600E
NXP Semiconductors
AC Thyristor power switch
003aac805
103
I
I
T
TSM
t
ITSM
(A)
t
p
102
T
j(init)
= 25 °C max
10
1
10−5
10−4
10−3
10−2
tp (s)
Fig 5. Non-repetitive peak on-state current as a function of pulse width; maximum values
IEC 61000-4-5 Standards
Surge Generator
Open Circuit Voltage
1.2 μs/50 μs waveform
R
R
L
Gen
5 μH
2 Ω
150 Ω
R
G
DUT
Load Model
Surge pulse
220 Ω
003aad077
Fig 6. Test circuit for inductive and resistive loads with conditions equivalent to IEC 61000-4-5
ACT108W-600E_3
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 — 21 October 2009
5 of 13
ACT108W-600E
NXP Semiconductors
AC Thyristor power switch
5. Thermal characteristics
Table 5.
Symbol
Rth(j-sp)
Thermal characteristics
Parameter
Conditions
Min
Typ
Max
Unit
thermal resistance from full cycle with heatsink compound;
junction to solder point see Figure 9
-
-
15
K/W
Rth(j-a)
thermal resistance from full cycle; printed-circuit board mounted for
-
-
70
-
-
K/W
K/W
junction to ambient
pad area; see Figure 7
full cycle; printed-circuit board mounted for
minimum footprint; see Figure 8
156
3.8 min
36
1.5
min
18
4.5
4.6
6.3
60
9
1.5
min
(3×)
2.3
10
1.5
min
4.6
001aab508
7
15
50
Fig 8. Minimum footprint SOT223
001aab509
Fig 7. Printed-circuit board pad area SOT223
ACT108W-600E_3
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 — 21 October 2009
6 of 13
ACT108W-600E
NXP Semiconductors
AC Thyristor power switch
003aac808
2
10
Z
th(j-sp)
(K/W)
10
1
P
−1
10
t
t
p
−2
10
10
−5
−4
−3
−2
−1
10
10
10
10
1
10
t
p
(s)
Fig 9. Transient thermal impedance from junction to solder point as a function of pulse width
6. Characteristics
Table 6.
Symbol
IGT
Characteristics
Parameter
Conditions
Min
Typ
Max
Unit
gate trigger current
VD = 12 V; IT = 100 mA; LD+ G-;
Tj = 25 °C; see Figure 10
1
-
10
mA
VD = 12 V; IT = 100 mA; LD- G-; Tj = 25 °C
1
-
-
-
10
30
mA
mA
IL
latching current
VD = 12 V; IG = 12 mA; Tj = 25 °C;
see Figure 11
IH
holding current
VD = 12 V; Tj = 25 °C; see Figure 12
IT = 1.1 A; see Figure 13
-
9
-
-
-
-
-
-
25
1.3
-
mA
V
VT
VGT
on-state voltage
gate trigger voltage
-
VD = 600 V; IT = 100 mA; Tj ≤ 125 °C
VD = 600 V; IT = 100 mA; Tj = 25 °C
VD = 600 V; Tj ≤ 125 °C
0.15
V
-
1
V
ID
off-state current
-
0.2
2
mA
µA
V/µs
VD = 600 V; Tj ≤ 25 °C
-
dVD/dt
rate of rise of off-state VDM = 402 V; Tj = 125 °C; gate open
1000
-
voltage
circuit; see Figure 14
dIcom/dt
rate of change of
commutating current
VD = 400 V; Tj = 125 °C; IT(RMS) = 1 A;
dVcom/dt = 15 V/µs; gate open circuit;
see Figure 15 and 16
0.3
-
-
-
-
A/ms
V
VCL
clamping voltage
ICL = 100 mA; tp = 1 ms; Tj ≤ 125 °C;
650
see Figure 17
ACT108W-600E_3
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 — 21 October 2009
7 of 13
ACT108W-600E
NXP Semiconductors
AC Thyristor power switch
003aac811
003aac809
3
3
I
I
L
GT
(1)
(2)
I
I
L(25°C)
GT(25°C)
2
2
1
0
1
(2)
(1)
0
−50
0
50
100
150
50
−50
0
150
100
T (°C)
T (°C)
j
j
Fig 11. Normalized latching current as a function of
junction temperature
Fig 10. Normalized gate trigger current as a function of
junction temperature
003aac810
003aac812
3
2.0
IT
I
H
(A)
I
H(25°C)
1.5
1.0
2
(1)
(2)
(3)
1
0.5
0.0
0
−50
0.0
0.5
1.0
1.5
2.0
0
50
100
150
V
T (V)
T (°C)
j
Fig 12. Normalized holding current as a function of
junction temperature
Fig 13. On-state current as a function of on-state
voltage
ACT108W-600E_3
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 — 21 October 2009
8 of 13
ACT108W-600E
NXP Semiconductors
AC Thyristor power switch
003aac813
003aac814
12
A
12
B
A
B
10
8
6
8
4
2
4
0
0
25
50
75
100
125
25
50
75
100
125
T (°C)
j
T (°C)
j
Fig 14. Normalized rate of rise of off-state voltage as a
function of junction temperature
Fig 15. Normalized critical rate of rise of commutating
current as a function of junction temperature
003aac815
003aac817
1.2
2.0
A [B]
V
CL
A [spec]
V
CL(25°C)
1.5
1.0
0.5
0
0.8
0.4
0
−50
−1
10
2
1
10
10
0
50
100
150
B (V/μs)
T (°C)
j
Fig 17. Normalized clamping voltage (upper limit) as a
function of junction temperature; minimum
values
Fig 16. Normalized critical rate of change of
commutating current as a function of critical
rate of change of commutating voltage;
minimum values
ACT108W-600E_3
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 — 21 October 2009
9 of 13
ACT108W-600E
NXP Semiconductors
AC Thyristor power switch
7. Package outline
Plastic surface-mounted package with increased heatsink; 4 leads
SOT223
D
B
E
A
X
c
y
H
v
M
A
E
b
1
4
Q
A
A
1
L
1
2
3
p
e
b
p
w
M
B
detail X
1
e
0
2
4 mm
scale
DIMENSIONS (mm are the original dimensions)
A
UNIT
A
b
b
c
D
E
e
e
H
L
p
Q
v
w
y
p
1
1
1
E
1.8
1.5
0.10 0.80
0.01 0.60
3.1
2.9
0.32
0.22
6.7
6.3
3.7
3.3
7.3
6.7
1.1
0.7
0.95
0.85
mm
4.6
2.3
0.2
0.1
0.1
REFERENCES
JEDEC JEITA
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
04-11-10
06-03-16
SOT223
SC-73
Fig 18. Package outline SOT223 (SC-73)
ACT108W-600E_3
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 — 21 October 2009
10 of 13
ACT108W-600E
NXP Semiconductors
AC Thyristor power switch
8. Revision history
Table 7.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
ACT108W-600E_3
Modifications:
20091021
Product data sheet
-
ACT108W-600E_2
• Various changes to content.
ACT108W-600E_2
ACT108W-600E_1
20090526
Product data sheet
-
-
ACT108W-600E_1
-
20090429
Product data sheet
ACT108W-600E_3
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 — 21 October 2009
11 of 13
ACT108W-600E
NXP Semiconductors
AC Thyristor power switch
9. Legal information
9.1 Data sheet status
Document status [1][2]
Product status[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term 'short data sheet' is explained in section "Definitions".
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product
status information is available on the Internet at URL http://www.nxp.com.
Applications — Applications that are described herein for any of these
9.2 Definitions
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
9.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Export control — This document as well as the item(s) described herein may
be subject to export control regulations. Export might require a prior
authorization from national authorities.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
9.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
10. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
ACT108W-600E_3
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 — 21 October 2009
12 of 13
ACT108W-600E
NXP Semiconductors
AC Thyristor power switch
11. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1
1.1
1.2
1.3
1.4
General description . . . . . . . . . . . . . . . . . . . . . .1
Features and benefits. . . . . . . . . . . . . . . . . . . . .1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1
Quick reference data . . . . . . . . . . . . . . . . . . . . .1
2
3
4
5
6
7
8
Pinning information. . . . . . . . . . . . . . . . . . . . . . .2
Ordering information. . . . . . . . . . . . . . . . . . . . . .2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3
Thermal characteristics . . . . . . . . . . . . . . . . . . .6
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . .7
Package outline . . . . . . . . . . . . . . . . . . . . . . . . .10
Revision history. . . . . . . . . . . . . . . . . . . . . . . . .11
9
Legal information. . . . . . . . . . . . . . . . . . . . . . . .12
Data sheet status . . . . . . . . . . . . . . . . . . . . . . .12
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . .12
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . .12
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .12
9.1
9.2
9.3
9.4
10
Contact information. . . . . . . . . . . . . . . . . . . . . .12
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2009.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 21 October 2009
Document identifier: ACT108W-600E_3
相关型号：
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