AFT27S006NT1 [NXP]
Airfast RF Power LDMOS Transistor, 728-2700 MHz, 28.8 dBm Avg., 28 V;
| 型号： | AFT27S006NT1 |
| 厂家： | 
NXP |
| 描述： | Airfast RF Power LDMOS Transistor, 728-2700 MHz, 28.8 dBm Avg., 28 V 光电二极管 |
| 文件： | 总25页 (文件大小：1076K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Document Number: AFT27S006N
Rev. 4, 12/2015
Freescale Semiconductor
Technical Data
RF Power LDMOS Transistor
N--Channel Enhancement--Mode Lateral MOSFET
AFT27S006NT1
This 28.8 dBm RF power LDMOS transistor is designed for cellular base
station applications covering the frequency range of 728 to 3600 MHz.
Typical Single--Carrier W--CDMA Performance: VDD = 28 Vdc,
IDQ = 65 mA, Pout = 28.8 dBm Avg., Input Signal PAR = 9.9 dB @ 0.01%
Probability on CCDF.(1)
728--3600 MHz, 28.8 dBm AVG., 28 V
AIRFAST RF POWER LDMOS
TRANSISTOR
700 MHz
G
Output PAR
(dB)
ACPR
(dBc)
IRL
(dB)
ps
D
Frequency
728 MHz
748 MHz
768 MHz
(dB)
24.3
24.4
24.2
(%)
20.2
19.9
19.4
9.9
9.9
9.8
--45.6
--45.9
--46.2
-- 1 9
-- 1 7
-- 1 3
Typical Single--Carrier W--CDMA Performance: VDD = 28 Vdc,
PLD--1.5W
PLASTIC
IDQ = 70 mA, Pout = 28.8 dBm Avg., Input Signal PAR = 9.9 dB @ 0.01%
Probability on CCDF.(1)
2100 MHz
G
Output PAR
(dB)
ACPR
(dBc)
IRL
(dB)
ps
D
Frequency
2110 MHz
2140 MHz
2170 MHz
(dB)
22.2
22.8
22.5
(%)
18.3
19.8
20.2
9.2
9.5
9.3
--42.3
--44.6
--46.0
-- 1 4
-- 1 7
-- 1 3
RF /V
in GS
RF /V
out DS
2300 MHz
(Top View)
G
Output PAR
(dB)
ACPR
(dBc)
IRL
(dB)
ps
D
Frequency
2300 MHz
2350 MHz
2400 MHz
(dB)
22.9
23.5
23.0
(%)
20.9
21.5
22.4
Note: The center pad on the backside of the
package is the source terminal for the
transistor.
9.8
9.4
8.9
--41.0
--40.8
--41.0
-- 1 0
-- 2 4
-- 11
Figure 1. Pin Connections
2600 MHz
G
Output PAR
(dB)
ACPR
(dBc)
IRL
(dB)
ps
D
Frequency
2500 MHz
2600 MHz
2700 MHz
(dB)
20.4
22.0
20.9
(%)
19.4
21.2
20.3
9.5
9.1
8.5
--44.0
--42.5
--40.9
-- 7
-- 1 6
-- 7
3500 MHz
G
Output PAR
(dB)
ACPR
(dBc)
IRL
(dB)
ps
D
Frequency
3400 MHz
3500 MHz
3600 MHz
(dB)
16.1
17.9
16.0
(%)
14.3
16.4
16.7
9.0
9.1
8.7
--44.1
--46.2
--44.4
-- 9
-- 1 3
-- 4
1. All data measured in fixture with device soldered to heatsink.
Features
Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
Designed for Digital Predistortion Error Correction Systems
Universal Broadband Driver
Freescale Semiconductor, Inc., 2013–2015. All rights reserved.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Vdc
Vdc
Vdc
C
Drain--Source Voltage
V
--0.5, +65
--6.0, +10
32, +0
DSS
Gate--Source Voltage
V
GS
DD
Operating Voltage
V
Storage Temperature Range
Case Operating Temperature Range
T
stg
--65 to +150
--40 to +150
--40 to +150
T
C
C
(1,2)
Operating Junction Temperature Range
T
J
C
Table 2. Thermal Characteristics
(2,3)
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Case
R
3.4
C/W
JC
Case Temperature 78C, 0.76 W CW, 28 Vdc, I
= 70 mA, 2140 MHz
DQ
Table 3. ESD Protection Characteristics
Test Methodology
Human Body Model (per JESD22--A114)
Class
1B
Machine Model (per EIA/JESD22--A115)
Charge Device Model (per JESD22--C101)
A
III
Table 4. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD22--A113, IPC/JEDEC J--STD--020
3
260
C
Table 5. Electrical Characteristics (T = 25C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
I
I
—
—
—
—
—
—
10
1
Adc
Adc
Adc
DSS
DSS
GSS
(V = 65 Vdc, V = 0 Vdc)
DS
GS
Zero Gate Voltage Drain Leakage Current
(V = 28 Vdc, V = 0 Vdc)
DS
GS
Gate--Source Leakage Current
I
1
(V = 5 Vdc, V = 0 Vdc)
GS
DS
On Characteristics
Gate Threshold Voltage
(V = 10 Vdc, I = 7.7 Adc)
V
V
0.8
1.5
0.1
1.2
1.8
0.2
1.6
2.3
0.3
Vdc
Vdc
Vdc
GS(th)
GS(Q)
DS(on)
DS
D
Gate Quiescent Voltage
(V = 28 Vdc, I = 70 mAdc, Measured in Functional Test)
DD
D
Drain--Source On--Voltage
(V = 6 Vdc, I = 77 mAdc)
V
GS
D
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select
Documentation/Application Notes -- AN1955.
(continued)
AFT27S006NT1
RF Device Data
Freescale Semiconductor, Inc.
2
Table 5. Electrical Characteristics (T = 25C unless otherwise noted) (continued)
A
Characteristic
Symbol
Min
Typ
Max
Unit
Functional Tests (In Freescale Test Fixture, 50 ohm system) V = 28 Vdc, I = 70 mA, P = 28.8 dBm Avg., f = 2170 MHz,
DD
DQ
out
Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @ 5 MHz Offset.
Power Gain
G
21.0
17.0
—
22.0
20.0
--44.0
-- 1 6
24.5
—
dB
%
ps
D
Drain Efficiency
Adjacent Channel Power Ratio
Input Return Loss
ACPR
IRL
--38.5
-- 1 0
dBc
dB
—
Load Mismatch (In Freescale Test Fixture, 50 ohm system) I = 70 mA, f = 2140 MHz
DQ
VSWR 5:1 at 32 Vdc, 8.1 W CW Output Power
(3 dB Input Overdrive from 6 W CW Rated Power)
No Device Degradation
Typical Performance (In Freescale Test Fixture, 50 ohm system) V = 28 Vdc, I = 70 mA, 2110--2170 MHz Bandwidth
DD
DQ
P
@ 1 dB Compression Point, CW
P1dB
—
—
6
—
—
W
out
AM/PM
--10.2
(Maximum value measured at the P3dB compression point across
the 2110--2170 MHz frequency range.)
VBW Resonance Point
VBW
—
80
—
MHz
res
(IMD Third Order Intermodulation Inflection Point)
Gain Flatness in 60 MHz Bandwidth @ P = 28.8 dBm Avg.
G
—
—
0.053
0.012
—
—
dB
out
F
Gain Variation over Temperature
G
dB/C
(--30C to +85C)
Output Power Variation over Temperature
P1dB
—
0.004
—
dB/C
(--30C to +85C)
Table 6. Ordering Information
Device
Tape and Reel Information
Package
AFT27S006NT1
T1 Suffix = 1000 Units, 16 mm Tape Width, 7--inch Reel
PLD--1.5W
AFT27S006NT1
RF Device Data
Freescale Semiconductor, Inc.
3
V
V
DD
GG
C7
C6
C13
C12
C8
R1
C5*
C1*
C3
Q1
C4
C2
C9
C10
C11
AFT27S006N
Rev. 2
2100MHz
D51056
V
DD
*C1 and C5 are mounted vertically.
NOTE: All data measured in fixture with device soldered to heatsink.
Figure 2. AFT27S006NT1 Test Circuit Component Layout — 2110--2170 MHz
Table 7. AFT27S006NT1 Test Circuit Component Designations and Values — 2110--2170 MHz
Part
Description
9.1 pF Chip Capacitors
Part Number
Manufacturer
ATC
C1, C5, C6, C8, C9
ATC100B39R1JT500XT
C2
1.2 pF Chip Capacitor
ATC100B1R2JT500XT
ATC100B2R7JT500XT
ATC100B1R5JT500XT
GRM32ER61H106KA12L
AFT27S006NT1
ATC
C3
2.7 pF Chip Capacitor
ATC
C4
1.5 pF Chip Capacitor
ATC
C7, C10, C11, C12, C13
10 F Chip Capacitors
RF Power LDMOS Transistor
4.75 , 1/4 W Chip Resistor
Murata
Freescale
Vishay
MTL
Q1
R1
CRCW12064R75FNEA
D51056
PCB
Rogers RO4350B, 0.020, = 3.66
r
AFT27S006NT1
RF Device Data
Freescale Semiconductor, Inc.
4
TYPICAL CHARACTERISTICS — 2110--2170 MHz
26
25
24
23
22
21
20
19
18
17
16
22
20
D
18
V
= 28 Vdc, P = 28.8 dBm (Avg.)
out
= 70 mA, Single--Carrier W--CDMA
DD
I
DQ
16
G
ps
14
3.84 MHz Channel Bandwidth
Input Signal PAR = 9.9 dB @ 0.01%
Probability on CCDF
-- 3 7
-- 3 9
-- 4 1
-- 4 3
-- 4 5
-- 4 7
-- 6
-- 0 . 2
-- 0 . 4
-- 0 . 6
-- 0 . 8
-- 1
IRL
-- 1 0
-- 1 4
-- 1 8
-- 2 2
-- 2 6
PARC
ACPR
-- 1 . 2
2060 2080 2100 2120 2140 2160 2180 2200 2240
f, FREQUENCY (MHz)
Figure 3. Single--Carrier Output Peak--to--Average Ratio Compression
(PARC) Broadband Performance @ Pout = 28.8 dBm Avg.
-- 2 0
IM3--U
-- 3 0
IM3--L
-- 4 0
-- 5 0
-- 6 0
-- 7 0
IM5--L
IM5--U
IM7--L
IM7--U
= 28 Vdc, P = 5.6 W (PEP), I = 70 mA
Two--Tone Measurements, (f1 + f2)/2 = Center
Frequency of 2140 MHz
V
DD
out
DQ
1
10
100
200
TWO--TONE SPACING (MHz)
Figure 4. Intermodulation Distortion Products
versus Two--Tone Spacing
-- 2 0
24
23.5
23
2
1
40
35
V
= 28 Vdc, I = 70 mA, f = 2140 MHz
DQ
DD
Single--Carrier W--CDMA, 3.84 MHz Channel
Bandwidth, Input Signal PAR = 9.9 dB @ 0.01%
Probability on CCDF
D
-- 2 5
-- 3 0
-- 3 5
-- 4 0
-- 4 5
-- 5 0
0
30
25
20
15
10
--2 dB = 1.1 W
G
ps
22.5
22
-- 1
--1 dB = 0.45 W
--3 dB = 1.55 W
-- 2
-- 3
ACPR
21.5
21
PARC
-- 4
0
0.5
1
1.5
2
2.5
P
, OUTPUT POWER (WATTS)
out
Figure 5. Output Peak--to--Average Ratio Compression
(PARC) versus Output Power
AFT27S006NT1
RF Device Data
Freescale Semiconductor, Inc.
5
TYPICAL CHARACTERISTICS — 2110--2170 MHz
24
60
-- 2 0
-- 2 5
-- 3 0
-- 3 5
-- 4 0
-- 4 5
-- 5 0
V
= 28 Vdc, I = 70 mA, Single--Carrier W--CDMA
DQ
DD
3.84 MHz Channel Bandwidth
2140 MHz
23
22
21
20
19
18
50
40
30
20
10
0
2110 MHz
2170 MHz
G
ps
Input Signal PAR = 9.9 dB
@ 0.01% Probability on CCDF
ACPR
D
2170 MHz
2140 MHz
2110 MHz
0.1
1
10
P
, OUTPUT POWER (WATTS) AVG.
out
Figure 6. Single--Carrier W--CDMA Power Gain, Drain
Efficiency and ACPR versus Output Power
24
35
25
Gain
22
20
18
15
5
V
= 28 Vdc
DD
P
= 0 dBm
in
I
= 70 mA
DQ
-- 5
16
IRL
14
12
-- 1 5
-- 2 5
1950 1990 2030 2070 2110 2150
2190 2230 2270
f, FREQUENCY (MHz)
Figure 7. Broadband Frequency Response
AFT27S006NT1
RF Device Data
Freescale Semiconductor, Inc.
6
Table 8. Load Pull Performance — Maximum Power Tuning
V
= 28 Vdc, I = 67 mA, Pulsed CW, 10 sec(on), 10% Duty Cycle
DD
DQ
Max Output Power
P1dB
(1)
Z
AM/PM
()
f
Z
Z
in
()
load
()
D
source
()
(%)
60.6
59.9
60.7
Gain (dB)
22.0
(dBm)
39.4
(W)
9
(MHz)
2110
2140
2170
1.63 + j1.52
1.08 + j1.13
1.12 + j0.824
0.727 -- j1.20
0.795 -- j1.16
0.833 -- j1.23
8.26 + j8.38
9.17 + j8.20
8.84 + j7.80
-- 1 2
-- 1 5
-- 1 5
21.9
39.4
9
21.8
39.6
9
Max Output Power
P3dB
(2)
Z
()
AM/PM
()
f
Z
Z
()
load
D
source
()
in
(%)
60.6
59.7
60.5
Gain (dB)
19.7
(dBm)
40.2
(W)
11
(MHz)
2110
2140
2170
1.63 + j1.52
1.08 + j1.13
1.12 + j0.824
0.648 -- j1.04
0.73 -- j0.977
0.815 -- j0.997
10.1 + j7.90
10.4 + j7.71
10.4 + j7.39
-- 1 7
-- 2 2
-- 2 1
19.6
40.2
11
19.6
40.3
11
(1) Load impedance for optimum P1dB power.
(2) Load impedance for optimum P3dB power.
Z
Z
Z
= Measured impedance presented to the input of the device at the package reference plane.
= Impedance as measured from gate contact to ground.
= Measured impedance presented to the output of the device at the package reference plane.
source
in
load
Table 9. Load Pull Performance — Maximum Drain Efficiency Tuning
V
= 28 Vdc, I = 67 mA, Pulsed CW, 10 sec(on), 10% Duty Cycle
DD
DQ
Max Drain Efficiency
P1dB
(1)
Z
AM/PM
()
f
Z
Z
in
()
load
()
D
source
()
(%)
69.4
68.4
69.4
Gain (dB)
24.1
(dBm)
37.5
(W)
6
(MHz)
2110
2140
2170
1.63 + j1.52
1.08 + j1.13
1.12 + j0.824
0.602 -- j1.19
0.677 -- j1.15
0.708 -- j1.17
4.69 + j12.4
5.12 + j11.9
4.92 + j11.7
-- 1 9
-- 2 3
-- 2 4
24.0
37.9
6
24.0
37.8
6
Max Drain Efficiency
P3dB
(2)
Z
()
AM/PM
()
f
Z
Z
()
load
D
source
()
in
(%)
69.8
68.1
68.6
Gain (dB)
21.8
(dBm)
38.6
(W)
7
(MHz)
2110
2140
2170
1.63 + j1.52
1.08 + j1.13
1.12 + j0.824
0.562 -- j1.04
0.635 -- j0.985
0.716 -- j0.996
5.40 + j12.0
5.45 + j11.6
5.75 + j11.3
-- 2 6
-- 3 2
-- 3 0
21.8
38.7
7
21.6
38.9
8
(1) Load impedance for optimum P1dB efficiency.
(2) Load impedance for optimum P3dB efficiency.
Z
Z
Z
= Measured impedance presented to the input of the device at the package reference plane.
= Impedance as measured from gate contact to ground.
= Measured impedance presented to the output of the device at the package reference plane.
source
in
load
Input Load Pull
Tuner and Test
Circuit
Output Load Pull
Tuner and Test
Circuit
Device
Under
Test
Z
Z
in
Z
load
source
AFT27S006NT1
RF Device Data
Freescale Semiconductor, Inc.
7
P1dB -- TYPICAL LOAD PULL CONTOURS — 2140 MHz
16
14
12
10
8
16
14
62
38
38.5
39
66
64
12
10
8
E
E
68
60
54
58
56
P
P
37.5
37
52
6
6
36
4
4
35.5
36.5
2
2
4
6
4
6
2
8
10
12
14
2
8
10
12
14
REAL ()
REAL ()
Figure 8. P1dB Load Pull Output Power Contours (dBm)
Figure 9. P1dB Load Pull Efficiency Contours (%)
16
16
14
12
10
8
25
14
24
24.5
E
-- 1 4
-- 3 0
12
10
8
E
23.5
23
22.5
22
-- 1 8
-- 2 6
-- 1 6
-- 2 2
-- 2 4
-- 2 0
-- 2 8
P
P
21.5
21
6
6
4
4
2
2
4
6
4
6
2
8
10
12
14
2
8
10
12
14
REAL ()
REAL ()
Figure 11. P1dB Load Pull AM/PM Contours ()
Figure 10. P1dB Load Pull Gain Contours (dB)
NOTE:
P
E
= Maximum Output Power
= Maximum Drain Efficiency
Gain
Drain Efficiency
Linearity
Output Power
AFT27S006NT1
RF Device Data
Freescale Semiconductor, Inc.
8
P3dB -- TYPICAL LOAD PULL CONTOURS — 2140 MHz
16
14
12
10
8
16
14
12
E
E
68
66
64
62
60
10
58
54
38
8
P
P
37.5
37
39
40
39.5
56
6
6
4
2
52
38.5
4
36
36.5
2
4
6
4
6
2
8
10
12
14
2
8
10
12
14
REAL ()
REAL ()
Figure 12. P3dB Load Pull Output Power Contours (dBm)
Figure 13. P3dB Load Pull Efficiency Contours (%)
16
16
22
21.5
21
14
12
10
8
14
12
10
8
-- 2 2
22.5
-- 3 0
E
-- 3 4
-- 3 6
E
20.5
P
-- 2 8
-- 2 4
20
-- 2 6
-- 3 2
-- 3 8
19.5
19
P
6
6
18.5
4
4
2
2
4
6
4
6
2
8
10
12
14
2
8
10
12
14
REAL ()
REAL ()
Figure 15. P3dB Load Pull AM/PM Contours ()
Figure 14. P3dB Load Pull Gain Contours (dB)
NOTE:
P
E
= Maximum Output Power
= Maximum Drain Efficiency
Gain
Drain Efficiency
Linearity
Output Power
AFT27S006NT1
RF Device Data
Freescale Semiconductor, Inc.
9
2500--2700 MHz
V
V
DD
GG
C14
C9
C8
C4
R1
C5
C3
C7
C1
C13
C15
Q1
C2
C10 C11
AFT27S006N
Rev. 2
C6
C12
2300MHz/2500MHz
D53818
V
DD
NOTE: All data measured in fixture with device soldered to heatsink.
Figure 16. AFT27S006NT1 Test Circuit Component Layout — 2500--2700 MHz
Table 10. AFT27S006NT1 Test Circuit Component Designations and Values — 2500--2700 MHz
Part
Description
8.2 pF Chip Capacitor
Part Number
Manufacturer
Murata
C1
C2
C3
GQM2195C2E8R2CB12D
7.5 pF Chip Capacitor
GQM2195C2E7R5CB12D
ATC100B8R2BT500XT
GRM32E61H106KA12L
ATC100B7R5BT500XT
ATC100B1R0BT500XT
227CKS050M
Murata
ATC
8.2 pF Chip Capacitor
C4, C7, C8, C9, C10, C11, C12
10 F, Chip Capacitors
7.5 pF Chip Capacitors
1.0 pF Chip Capacitor
Murata
ATC
C5, C6
C13
C14
C15
Q1
ATC
220 F, 50 V Electrolytic Capacitor
0.7 pF Chip Capacitor
Illinois Capacitor
ATC
ATC100B0R7BT500XT
AFT27S006NT1
RF Power LDMOS Transistor
4.75 , 1/4 W Chip Resistor
Freescale
Vishay
MTL
R1
CRCW12064R75FNEA
D53818
PCB
Rogers RO4350B, 0.020, = 3.66
r
AFT27S006NT1
RF Device Data
Freescale Semiconductor, Inc.
10
TYPICAL CHARACTERISTICS — 2500--2700 MHz
25
24
23
22
21
20
19
18
17
16
15
24
22
D
20
G
ps
18
V
DQ
= 28 Vdc, P = 28.8 dBm (Avg.)
out
= 70 mA, Single--Carrier W--CDMA
DD
16
I
3.84 MHz Channel Bandwidth
Input Signal PAR = 9.9 dB @ 0.01%
Probability on CCDF
-- 3 9
-- 4 0
-- 4 1
-- 4 2
-- 4 3
-- 4 4
0
0
PARC
-- 4
-- 0 . 4
-- 0 . 8
-- 1 . 2
-- 1 . 6
-- 2
-- 8
ACPR
IRL
-- 1 2
-- 1 6
-- 2 0
2480 2510 2540 2570 2600 2630 2660 2690 2720
f, FREQUENCY (MHz)
Figure 17. Single--Carrier Output Peak--to--Average Ratio Compression
(PARC) Broadband Performance @ Pout = 28.8 dBm Avg.
26
60
-- 1 0
-- 2 0
-- 3 0
-- 4 0
-- 5 0
-- 6 0
-- 7 0
V
= 28 Vdc, I = 70 mA, Single--Carrier W--CDMA
DQ
DD
3.84 MHz Channel Bandwidth, Input Signal
PAR = 9.9 dB @ 0.01% Probability on CCDF
24
22
20
18
16
14
50
40
30
20
10
0
G
ps
2600 MHz
2700 MHz
2700 MHz
ACPR
2500 MHz
2700 MHz
2600 MHz
D
1
0.3
10
P
, OUTPUT POWER (WATTS) AVG.
out
Figure 18. Single--Carrier W--CDMA Power Gain, Drain
Efficiency and ACPR versus Output Power
24
5
0
Gain
22
20
18
-- 5
-- 1 0
-- 1 5
-- 2 0
-- 2 5
16
IRL
V
P
= 28 Vdc
= 0 dBm
= 70 mA
DD
14
12
in
I
DQ
2480 2520 2560 2600 2640 2680
2720 2760 2800
f, FREQUENCY (MHz)
Figure 19. Broadband Frequency Response
AFT27S006NT1
RF Device Data
Freescale Semiconductor, Inc.
11
2300--2400 MHz
V
V
DD
GG
C14
C9
C8
C4
C5
R1
C3
C7
C1
C13
Q1
C17
C15 C16
C2
C6
C10 C11
C12
AFT27S006N
Rev. 2
2300MHz/2500MHz
D53818
V
DD
NOTE: All data measured in fixture with device soldered to heatsink.
Figure 20. AFT27S006NT1 Test Circuit Component Layout — 2300--2400 MHz
Table 11. AFT27S006NT1 Test Circuit Component Designations and Values — 2300--2400 MHz
Part
Description
8.2 pF Chip Capacitor
Part Number
Manufacturer
Murata
C1
C2
C3
GQM2195C2E8R2CB12D
7.5 pF Chip Capacitor
8.2 pF Chip Capacitor
10 F Chip Capacitors
GQM2195C2E7R5CB12D
ATC100B8R2BT500XT
GRM32E61H106KA12L
Murata
ATC
C4, C7, C8, C9, C10, C11,
C12
Murata
C5, C6
C13
C14
C15
C16
C17
Q1
7.5 pF Chip Capacitors
1.0 pF Chip Capacitor
ATC100B7R5BT500XT
ATC100B1R0BT500XT
227CKS050M
ATC
ATC
220 F, 50 V Electrolytic Capacitor
0.8 pF Chip Capacitor
Illinois Capacitor
ATC
ATC100B0R8CT500XT
ATC100B1R5CT500XT
ATC100B1R2CT500XT
AFT27S006NT1
1.5 pF Chip Capacitor
ATC
1.2 pF Chip Capacitor
ATC
RF Power LDMOS Transistor
4.75 , 1/4 W Chip Resistor
Freescale
Vishay
MTL
R1
CRCW12064R75FNEA
D53818
PCB
Rogers RO4350B, 0.020, = 3.66
r
AFT27S006NT1
RF Device Data
Freescale Semiconductor, Inc.
12
TYPICAL CHARACTERISTICS — 2300--2400 MHz
24
24
V
I
= 28 Vdc, P = 28.8 dBm (Avg.)
out
= 70 mA, Single--Carrier W--CDMA
DD
23
23.8
23.6
23.4
23.2
D
DQ
22
21
3.84 MHz Channel Bandwidth
Input Signal PAR = 9.9 dB @ 0.01%
Probability on CCDF
20
G
ps
-- 9
0
-- 4 0
--40.2
--40.4
--40.6
--40.8
-- 4 1
23
22.8
22.6
22.4
22.2
22
-- 1 3
-- 1 7
-- 2 1
-- 2 5
-- 2 9
-- 0 . 2
-- 0 . 4
-- 0 . 6
-- 0 . 8
-- 1
IRL
PARC
ACPR
2290 2305 2320 2335 2350 2365 2380 2395 2410
f, FREQUENCY (MHz)
Figure 21. Single--Carrier Output Peak--to--Average Ratio Compression
(PARC) Broadband Performance @ Pout = 28.8 dBm Avg.
25
60
-- 1 0
V
= 28 Vdc, I = 70 mA, Single--Carrier
DQ
DD
W--CDMA, 3.84 MHz Channel Bandwidth
24
23
22
21
50
40
30
20
10
0
-- 2 0
-- 3 0
-- 4 0
-- 5 0
-- 6 0
-- 7 0
2400 MHz
2350 MHz
G
ps
2300 MHz
2400 MHz
2300 MHz
2350 MHz
2400 MHz
ACPR
D
20
19
Input Signal = 9.9 dB @ 0.01%
Probability on CCDF
0.3
1
10
P
, OUTPUT POWER (WATTS) AVG.
out
Figure 22. Single--Carrier W--CDMA Power Gain, Drain
Efficiency and ACPR versus Output Power
30
5
0
25
20
15
Gain
-- 5
-- 1 0
-- 1 5
-- 2 0
-- 2 5
10
IRL
V
P
= 28 Vdc
= 0 dBm
= 70 mA
DD
5
0
in
I
DQ
2050
2250
2350
2450
2550
2650
2150
f, FREQUENCY (MHz)
Figure 23. Broadband Frequency Response
AFT27S006NT1
RF Device Data
Freescale Semiconductor, Inc.
13
Table 12. Load Pull Performance — Maximum Power Tuning
V
= 28 Vdc, I = 67 mA, Pulsed CW, 10 sec(on), 10% Duty Cycle
DD
DQ
Max Output Power
P1dB
(1)
Z
AM/PM
()
f
Z
Z
in
()
load
()
D
source
()
(%)
56.9
56.2
56.5
57.6
58.9
Gain (dB)
21.4
(dBm)
39.1
39.3
39.0
39.5
39.1
(W)
8
(MHz)
2300
2400
1.12 + j0.579
1.06 -- j0.483
1.01 -- j0.337
0.983 -- j1.95
1.47 -- j1.30
0.964 - j0.336
0.915 + j0.365
8.27 + j7.08
8.19 + j6.26
6.75 + j5.85
7.30 + j5.57
6.16 + j5.48
-- 1 4
-- 1 5
-- 1 4
-- 1 6
-- 11
20.7
8
2500
2600
2690
1.00 + j0.405
0.793 + j2.06
1.32 + j1.75
20.8
8
20.0
9
20.1
8
Max Output Power
P3dB
(2)
Z
()
AM/PM
()
f
Z
Z
()
load
D
source
()
in
(%)
56.0
55.6
57.3
57.5
58.8
Gain (dB)
(dBm)
(W)
(MHz)
2300
2400
2500
2600
2690
1.12 + j0.579
0.908 - j0.0973
10.0 + j6.49
9.48 + j5.93
8.55 + j5.79
8.30 + j5.44
7.60 + j5.25
19.0
39.9
10
-- 2 0
-- 2 2
-- 2 1
-- 2 3
-- 1 7
1.06 -- j0.483
1.01 -- j0.337
0.983 -- j1.95
1.47 -- j1.30
0.831 + j0.588
1.05 + j0.711
0.633 + j2.21
1.40 + j2.16
18.5
18.6
17.9
17.8
40.0
39.9
40.2
40.0
10
10
10
10
(1) Load impedance for optimum P1dB power. (2) Load impedance for optimum P3dB power.
Z
Z
Z
= Measured impedance presented to the input of the device at the package reference plane.
= Impedance as measured from gate contact to ground.
= Measured impedance presented to the output of the device at the package reference plane.
source
in
load
Table 13. Load Pull Performance — Maximum Drain Efficiency Tuning
V
= 28 Vdc, I = 67 mA, Pulsed CW, 10 sec(on), 10% Duty Cycle
DD
DQ
Max Drain Efficiency
P1dB
(1)
Z
AM/PM
()
f
Z
Z
in
()
load
()
D
source
()
(%)
63.8
62.8
63.1
63.3
64.6
Gain (dB)
(dBm)
(W)
(MHz)
2300
1.12 + j0.579
1.06 -- j0.483
1.01 -- j0.337
0.983 -- j1.95
1.47 -- j1.30
0.833 -- j0.40
5.09 + j10.3
5.09 + j9.23
4.51 + j8.31
4.88 + j7.74
4.12 + j7.31
23.4
37.6
6
-- 2 0
-- 2 2
-- 1 9
-- 2 1
-- 1 7
2400
2500
2600
2690
0.805 + j0.29
0.835 + j0.341
0.755 + j1.96
1.08 + j1.64
22.5
22.6
21.3
21.7
38.0
37.9
38.7
38.2
6
6
7
7
Max Drain Efficiency
P3dB
(2)
Z
()
AM/PM
()
f
Z
Z
()
load
D
source
()
in
(%)
63.2
61.6
63.4
62.7
64.8
Gain (dB)
(dBm)
(W)
(MHz)
2300
2400
2500
2600
2690
1.12 + j0.579
0.807 -- j0.161
5.41 + j10.0
6.38 + j9.17
5.16 + j8.53
5.61 + j7.84
4.38 + j7.31
21.1
38.5
7
-- 2 9
-- 2 6
-- 2 7
-- 2 8
-- 2 5
1.06 -- j0.483
1.01 -- j0.337
0.983 -- j1.95
1.47 -- j1.30
0.77 + j0.525
0.921 + j0.637
0.608 + j2.13
1.18 + j2.01
20.2
20.5
19.3
19.6
39.1
38.8
39.4
38.8
8
8
9
8
(1) Load impedance for optimum P1dB efficiency. (2) Load impedance for optimum P3dB efficiency.
Z
Z
Z
= Measured impedance presented to the input of the device at the package reference plane.
= Impedance as measured from gate contact to ground.
= Measured impedance presented to the output of the device at the package reference plane.
source
in
load
Input Load Pull
Tuner and Test
Circuit
Output Load Pull
Tuner and Test
Circuit
Device
Under
Test
Z
Z
in
Z
load
source
AFT27S006NT1
RF Device Data
Freescale Semiconductor, Inc.
14
P1dB -- TYPICAL LOAD PULL CONTOURS — 2500 MHz
16
14
12
10
8
16
36
36.5
35.5
37
14
12
10
8
35
38
37.5
38.5
62
60
52
56
54
E
E
58
50
6
6
P
P
48
4
4
2
2
4
6
4
6
2
8
10
12
14
2
8
10
12
14
REAL ()
REAL ()
Figure 24. P1dB Load Pull Output Power Contours (dBm)
Figure 25. P1dB Load Pull Efficiency Contours (%)
16
14
16
-- 8
14
12
10
8
-- 1 0
-- 1 2
12
23
-- 1 4
-- 1 6
23.5
22
22.5
10
8
-- 1 8
E
-- 2 2
-- 2 4
21.5
21
E
20.5
20
-- 2 0
6
6
P
P
4
4
19.5
2
2
4
6
4
6
2
8
10
12
14
2
8
10
12
14
REAL ()
REAL ()
Figure 27. P1dB Load Pull AM/PM Contours ()
Figure 26. P1dB Load Pull Gain Contours (dB)
NOTE:
P
E
= Maximum Output Power
= Maximum Drain Efficiency
Gain
Drain Efficiency
Linearity
Output Power
AFT27S006NT1
RF Device Data
Freescale Semiconductor, Inc.
15
P3dB -- TYPICAL LOAD PULL CONTOURS — 2500 MHz
16
14
12
10
8
16
37.5
38.5
37
38
36.5
14
12
10
8
36
39
62
39.5
60
P
E
E
56
58
52
54
50
6
6
P
4
4
48
47
14
2
2
4
6
4
6
2
8
10
12
2
8
10
12
14
REAL ()
REAL ()
Figure 28. P3dB Load Pull Output Power Contours (dBm)
Figure 29. P3dB Load Pull Efficiency Contours (%)
16
14
12
16
-- 1 4
14
12
10
8
-- 1 6
-- 1 8
-- 2 0
-- 2 2
21
21.5
E
20
19.5
20.5
10
8
-- 3 0
19
E
-- 2 6
18.5
-- 2 8
6
6
P
P
-- 2 4
18
4
4
17.5
2
2
4
6
4
6
2
8
10
12
14
2
8
10
12
14
REAL ()
REAL ()
Figure 31. P3dB Load Pull AM/PM Contours ()
Figure 30. P3dB Load Pull Gain Contours (dB)
NOTE:
P
E
= Maximum Output Power
= Maximum Drain Efficiency
Gain
Drain Efficiency
Linearity
Output Power
AFT27S006NT1
RF Device Data
Freescale Semiconductor, Inc.
16
TYPICAL CHARACTERISTICS —3400--3600 MHz
20
20
19.5
19
V
DQ
= 28 Vdc, P = 28.8 dBm (Avg.)
out
DD
18
16
14
12
I
= 70 mA, Single--Carrier W--CDMA
3.84 MHz Channel Bandwidth
Input Signal PAR = 9.9 dB @ 0.01%
Probability on CCDF
18.5
18
D
G
ps
-- 3
-- 0 . 6
-- 0 . 8
-- 1
17.5
17
-- 4 2
-- 4 3
-- 4 4
-- 6
PARC
-- 9
16.5
16
-- 1 . 2
-- 1 . 4
-- 1 . 6
-- 4 5
-- 4 6
-- 1 2
-- 1 5
IRL
15.5
ACPR
15
-- 4 7
-- 1 8
3380 3410 3440 3470 3500 3530 3560 3590 3620
f, FREQUENCY (MHz)
Figure 32. Single--Carrier Output Peak--to--Average Ratio Compression
(PARC) Broadband Performance @ Pout = 28.8 dBm Avg.
60
50
40
30
20
10
0
20
18
16
14
12
10
8
-- 1 0
-- 2 0
-- 3 0
-- 4 0
-- 5 0
-- 6 0
-- 7 0
V
= 28 Vdc, I = 70 mA, Single--Carrier W--CDMA
DQ
DD
ACPR
3.84 MHz Channel Bandwidth
3500 MHz
3400 MHz
3600 MHz
3500 MHz
G
ps
D
3600 MHz
3600 MHz
3500 MHz
3400 MHz
3400 MHz
Input Signal PAR = 9.9 dB @ 0.01%
Probability on CCDF
0.1
1
10
P
, OUTPUT POWER (WATTS) AVG.
out
Figure 33. Single--Carrier W--CDMA Power Gain, Drain
Efficiency and ACPR versus Output Power
10
5
24
21
18
15
12
9
V
P
= 28 Vdc
= 0 dBm
= 70 mA
DD
in
I
DQ
Gain
0
-- 5
-- 1 0
-- 1 5
-- 2 0
IRL
6
3100 3200 3300 3400 3500 3600 3700 3800 3900
f, FREQUENCY (MHz)
Figure 34. Broadband Frequency Response
AFT27S006NT1
RF Device Data
Freescale Semiconductor, Inc.
17
728--768 MHz
V
V
DD
GG
C15
C14
C11
C10
C6
C5
R1
C7*
C8
C9*
C1*
C3
C2
C4
Q1
C12
C13
AFT27S006N
Rev. 1
800MHz
D51698
C16
C17
V
DD
*C1, C7 and C9 are mounted vertically.
NOTE: All data measured in fixture with device soldered to heatsink.
Figure 35. AFT27S006NT1 Test Circuit Component Layout — 728--768 MHz
Table 14. AFT27S006NT1 Test Circuit Component Designations and Values — 728--768 MHz
Part
Description
33 pF Chip Capacitors
Part Number
Manufacturer
ATC
C5, C10, C11, C12, C13
ATC100B330JT500XT
C2
4.7 pF Chip Capacitor
6.8 pF Chip Capacitor
3.9 pF Chip Capacitors
82 pF Chip Capacitors
0.5 pF Chip Capacitor
10 F Chip Capacitors
RF Power LDMOS Transistor
10 , 1/4 W Chip Resistor
ATC100B4R7JT500XT
ATC100B6R8JT500XT
ATC100B3R9JT500XT
ATC100B820JT500XT
ATC100B0R5JT500XT
GRM32ER61H106KA12L
AFT27S006NT1
ATC
C3
ATC
C4, C7
ATC
C1, C9
ATC
C8
ATC
C6, C14, C15, C16, C17
Murata
Freescale
Vishay
MTL
Q1
R1
CRCW120610R0JNEA
D51698
PCB
Rogers RO4350B, 0.020, = 3.66
r
AFT27S006NT1
RF Device Data
Freescale Semiconductor, Inc.
18
TYPICAL CHARACTERISTICS — 728--768 MHz
25
24.8
24.6
24.4
24.2
24
22
V
DQ
= 28 Vdc, P = 28.8 dBm (Avg.)
out
DD
21
I
= 65 mA, Single--Carrier W--CDMA
20
D
19
G
ps
18
3.84 MHz Channel Bandwidth
Input Signal PAR = 9.9 dB @ 0.01%
Probability on CCDF
-- 4 3
-- 4 4
-- 4 5
-- 4 6
-- 4 7
-- 4 8
-- 9
0.1
23.8
23.6
23.4
23.2
23
-- 11
-- 1 3
-- 1 5
-- 1 7
-- 1 9
0.06
0.02
--0.02
--0.06
-- 0 . 1
PARC
ACPR
720
IRL
730
710
740
750
760
770
780
790
f, FREQUENCY (MHz)
Figure 36. Single--Carrier Output Peak--to--Average Ratio Compression
(PARC) Broadband Performance @ Pout = 28.8 dBm Avg.
28
60
0
V
= 28 Vdc, I = 65 mA, Single--Carrier
DQ
DD
D
W--CDMA, 3.84 MHz Channel Bandwidth, Input
Signal PAR = 9.9 dB @ 0.01%
Probability on CCDF
26
24
22
20
50
40
30
20
10
0
-- 1 0
-- 2 0
-- 3 0
-- 4 0
-- 5 0
-- 6 0
G
ps
ACPR
768 MHz
748 MHz
728 MHz
728 MHz
748 MHz
768 MHz
728 MHz
18
16
748 MHz
768 MHz
1
0.4
10
P
, OUTPUT POWER (WATTS) AVG.
out
Figure 37. Single--Carrier W--CDMA Power Gain, Drain
Efficiency and ACPR versus Output Power
27
5
0
V
P
= 28 Vdc
= 0 dBm
= 70 mA
DD
in
25
23
21
Gain
I
DQ
-- 5
-- 1 0
-- 1 5
-- 2 0
-- 2 5
19
IRL
17
15
600
700
750
800
850
900
950
1000
650
f, FREQUENCY (MHz)
Figure 38. Broadband Frequency Response
AFT27S006NT1
RF Device Data
Freescale Semiconductor, Inc.
19
0.28
7.11
0.165
4.91
0.089
2.26
0.155
3.94
Solder pad with thermal via
structure. All dimensions in mm.
0.085
2.16
Figure 39. PCB Pad Layout for PLD--1.5W
AS06
N( )B
YYWW
Figure 40. Product Marking
AFT27S006NT1
20
RF Device Data
Freescale Semiconductor, Inc.
PACKAGE DIMENSIONS
AFT27S006NT1
RF Device Data
Freescale Semiconductor, Inc.
21
AFT27S006NT1
RF Device Data
Freescale Semiconductor, Inc.
22
AFT27S006NT1
RF Device Data
Freescale Semiconductor, Inc.
23
PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS
Refer to the following resources to aid your design process.
Application Notes
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Software
Electromigration MTTF Calculator
RF High Power Model
.s2p File
Development Tools
Printed Circuit Boards
For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to
Software & Tools on the part’s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
1
Oct. 2013
Nov. 2013
Initial Release of Data Sheet
Table 5, Functional Tests table: gain min and max limits improved and typical values updated to reflect
large volume production data, p. 3
Tables 6, 7, 8, 9, Test Circuit Component Designations and Values: updated PCB description to reflect
most current board specifications from Rogers, pp. 4, 10, 12, 17
2
3
Sept. 2014
Nov. 2014
Tape and Reel information: corrected tape width information from 13--inch reel to 7--inch reel to reflect
actual reel size, p. 1
Changed operating frequency from 728–2700 MHz to 728–3600 MHz due to expanded device frequency
capability resulting from additional test data, p. 1
Added 3400--3600 MHz performance information as follows:
-- Typical Frequency Band table, p. 1
-- Fig. 32, Single--Carrier Output Peak--to--Average Ratio Compression (PARC) Broadband Performance
@ P = 28.8 dBm Avg., p. 17
out
-- Fig. 33, Single--Carrier W--CDMA Power Gain, Drain Efficiency and ACPR versus Output Power, p. 17
-- Fig. 34, Broadband Frequency Response, p. 17
4
Dec. 2015
Table 1, Maximum Ratings: corrected operating junction temperature range upper limit, p. 2
Table 5, Electrical Characteristics, On Characteristics V
: updated I unit of measure to mAdc to
D
DS(on)
reflect actual unit of measure, p. 2
Added Ordering Information Table 6, p. 3
AFT27S006NT1
RF Device Data
Freescale Semiconductor, Inc.
24
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Document Number: AFT27S006N
Rev. 4, 12/2015
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