ATC600F0R3BT250XT [NXP]

RF Power GaN Transistor;


型号：	ATC600F0R3BT250XT
厂家：	NXP
描述：	RF Power GaN Transistor
文件：	总8页 (文件大小：185K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Document Number: A3G20S250--01S

Rev. 0, 09/2018

NXP Semiconductors

Technical Data

RF Power GaN Transistor

This 45 W RF power GaN transistor is designed for cellular base station

applications covering the frequency range of 1800 to 2200 MHz.

A3G20S250--01SR3

This part is characterized and performance is guaranteed for applications

operating in the 1800 to 2200 MHz band. There is no guarantee of performance

when this part is used in applications designed outside of these frequencies.

1800–2200 MHz, 45 W AVG., 48 V

AIRFAST RF POWER GaN

TRANSISTOR

2000 MHz



Typical Single--Carrier W--CDMA Performance: V_DD= 48 Vdc,

I_DQ= 250 mA, P_out= 45 W Avg., Input Signal PAR = 9.9 dB @ 0.01%

Probability on CCDF.



Output PAR

(dB)

ACPR

(dBc)

IRL

(dB)

Frequency

1805 MHz

1990 MHz

2170 MHz

(dB)

17.6

17.9

18.2

(%)

34.8

37.2

37.0

6.9

7.0

6.9

–35.1

–34.4

–34.1

–10

–8

NI--400S--2SA

–10

Features



High terminal impedances for optimal broadband performance

Designed for digital predistortion error correction systems

Optimized for Doherty applications

RF /V

in GS

RF /V

out DS

(Top View)

Figure 1. Pin Connections

 2018 NXP B.V.

A3G20S250--01SR3

RF Device Data

NXP Semiconductors

Table 1. Maximum Ratings

Rating

Symbol

Value

125

Unit

Vdc

C

Drain--Source Voltage

Gate--Source Voltage

Operating Voltage

DSS

–8, 0

0 to +55

Maximum Forward Gate Current @ T = 25C

GMAX

Storage Temperature Range

stg

–65 to +150

–55 to +150

–55 to +225

275

Case Operating Temperature Range

Operating Junction Temperature Range

C

(1)

Absolute Maximum Channel Temperature

MAX

C

Table 2. Thermal Characteristics

Characteristic

Symbol

(IR)

Value

Unit

(2)

Thermal Resistance by Infrared Measurement, Active Die Surface--to--Case

1.0

C/W



Case Temperature 76C, P = 78 W

(3)

Thermal Resistance by Finite Element Analysis, Channel--to--Case



CHC

1.32

C/W

Case Temperature 80C, P = 78 W

(FEA)

Table 3. ESD Protection Characteristics

Test Methodology

Class

Human Body Model (per JS--001--2017)

Charge Device Model (per JS--002--2014)

Table 4. Electrical Characteristics (T = 25C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

Off Characteristics

Drain--Source Breakdown Voltage

150

—

Vdc

(BR)DSS

(V = –8 Vdc, I = 24 mAdc)

On Characteristics

Gate Threshold Voltage

(V = 10 Vdc, I = 24 mAdc)

–3.8

–3.6

–7.5

–3.0

–2.9

—

–2.3

–2.6

—

Vdc

GS(th)

Gate Quiescent Voltage

(V = 48 Vdc, I = 250 mAdc, Measured in Functional Test)

GS(Q)

Gate--Source Leakage Current

(V = 0 Vdc, V = –5 Vdc)

mAdc

GSS

1. Reliability tests were conducted at 225C.

2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.nxp.com/RF and search for AN1955.

3. R

(FEA) must be used for purposes related to reliability and limitations on maximum channel temperature. MTTF may be estimated by



CHC

[A + B/(T + 273)]

the expression MTTF (hours) = 10

, where T is the channel temperature in degrees Celsius, A = –10.3 and B = 8260.

(continued)

A3G20S250--01SR3

RF Device Data

NXP Semiconductors

Table 4. Electrical Characteristics (T = 25C unless otherwise noted) (continued)

Characteristic

Symbol

Min

Typ

Max

Unit

(1)

Functional Tests

(In NXP Test Fixture, 50 ohm system) V = 48 Vdc, I = 250 mA, P = 45 W Avg., f = 2170 MHz, Single--Carrier

out

W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel

Bandwidth @ 5 MHz Offset. [See note on correct biasing sequence.]

Power Gain

16.5

33.2

6.3

—

18.2

37.0

6.9

19.5

—

Drain Efficiency



Output Peak--to--Average Ratio @ 0.01% Probability on CCDF

Adjacent Channel Power Ratio

Input Return Loss

PAR

ACPR

IRL

—

dBc

–34.1

–10

–32.0

–5

—

Load Mismatch (In NXP Test Fixture, 50 ohm system) I = 250 mA, f = 1990 MHz, 12 sec(on), 10% Duty Cycle

VSWR 10:1 at 55 Vdc, 281 W Pulsed CW Output Power

(3 dB Input Overdrive from 229 W Pulsed CW Rated Power)

No Device Degradation

Typical Performance (In NXP Test Fixture, 50 ohm system) V = 48 Vdc, I = 250 mA, 1805–2170 MHz Bandwidth

(2)

@ 3 dB Compression Point

P3dB

—

240

–12

—

out

AM/PM





(Maximum value measured at the P3dB compression point across

the 1805–2170 MHz bandwidth)

VBW Resonance Point

VBW

—

170

—

MHz

res

(IMD Third Order Intermodulation Inflection Point)

Gain Flatness in 365 MHz Bandwidth @ P = 45 W Avg.

—

0.5

—

out

Gain Variation over Temperature

G

0.013

dB/C

(–40C to +85C)

Output Power Variation over Temperature

P1dB

—

0.004

—

dB/C

(–40C to +85C)

Table 5. Ordering Information

Device

Tape and Reel Information

Package

A3G20S250--01SR3

R3 Suffix = 250 Units, 32 mm Tape Width, 13--inch Reel

NI--400S--2SA

1. Part internally input matched.

2. P3dB = P

+ 7.0 dB where P

is the average output power measured using an unclipped W--CDMA single--carrier input signal where

avg

output PAR is compressed to 7.0 dB @ 0.01% probability on CCDF.

NOTE: Correct Biasing Sequence for GaN Depletion Mode Transistors

Turning the device ON

1. Set V to –5 V

2. Turn on V to nominal supply voltage (48 V)

3. Increase V until I current is attained

4. Apply RF input power to desired level

Turning the device OFF

1. Turn RF power off

2. Reduce V down to –5 V

3. Reduce V down to 0 V (Adequate time must be allowed

for V to reduce to 0 V to prevent severe damage to device.)

4. Turn off V

A3G20S250--01SR3

RF Device Data

NXP Semiconductors

C11

C10

cut out

area

A3G20S250-01S

Rev. 0

D102278

aaa-031427

Figure 2. A3G20S250--01SR3 Test Circuit Component Layout

Table 6. A3G20S250--01SR3 Test Circuit Component Designations and Values

Part

C1, C2, C4, C8, C9

Description

Part Number

ATC600F100JT250XT

ATC600F1R8BT250XT

Manufacturer

ATC

10 pF Chip Capacitor

1.8 pF Chip Capacitor

ATC

C5, C10

10 F Chip Capacitor

C5750X7S2A106M230KB

ATC600F0R6BT250XT

ATC600F0R3BT250XT

MCGPR100V227M16X26

CRCW12066R20FKEA

CRCW12063R30FKEA

D102278

TDK

0.6 pF Chip Capacitor

ATC

0.3 pF Chip Capacitor

ATC

C11

220 F, 100 V Electrolytic Capacitor

6.2 , 1/4 W Chip Resistor

3.3 , 1/4 W Chip Resistor

Multicomp

Vishay

MTL

PCB

Rogers RO4350B, 0.020,  = 3.66

A3G20S250--01SR3

RF Device Data

NXP Semiconductors

PACKAGE DIMENSIONS

A3G20S250--01SR3

RF Device Data

NXP Semiconductors

A3G20S250--01SR3

RF Device Data

NXP Semiconductors

PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS

Refer to the following resources to aid your design process.

Application Notes



AN1908: Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages

AN1955: Thermal Measurement Methodology of RF Power Amplifiers

Engineering Bulletins

EB212: Using Data Sheet Impedances for RF LDMOS Devices

Software

.s2p File

Development Tools

Printed Circuit Boards



To Download Resources Specific to a Given Part Number:

1. Go to http://www.nxp.com/RF

2. Search by part number

3. Click part number link

4. Choose the desired resource from the drop down menu

REVISION HISTORY

The following table summarizes revisions to this document.

Revision

Date

Description

Sept. 2018

 Initial release of data sheet

A3G20S250--01SR3

RF Device Data

NXP Semiconductors

Information in this document is provided solely to enable system and software

implementers to use NXP products. There are no express or implied copyright licenses

granted hereunder to design or fabricate any integrated circuits based on the information

in this document. NXP reserves the right to make changes without further notice to any

products herein.

How to Reach Us:

Home Page:

nxp.com

Web Support:

nxp.com/support

NXP makes no warranty, representation, or guarantee regarding the suitability of its

products for any particular purpose, nor does NXP assume any liability arising out of the

application or use of any product or circuit, and specifically disclaims any and all liability,

including without limitation consequential or incidental damages. “Typical” parameters

that may be provided in NXP data sheets and/or specifications can and do vary in

different applications, and actual performance may vary over time. All operating

parameters, including “typicals,” must be validated for each customer application by

customer’s technical experts. NXP does not convey any license under its patent rights

nor the rights of others. NXP sells products pursuant to standard terms and conditions of

sale, which can be found at the following address: nxp.com/SalesTermsandConditions.

NXP, the NXP logo and Airfast are trademarks of NXP B.V. All other product or service

names are the property of their respective owners.

E 2018 NXP B.V.

A3G20S250--01SR3

RF Device Data

NXP Semiconductors

Document Number: A3G20S250--01S

Rev. 0, 09/2018

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