BAP50LX [NXP]
Silicon PIN diode; 硅PIN二极管
| 型号： | BAP50LX |
| 厂家： | 
NXP |
| 描述： | Silicon PIN diode |
| 文件： | 总8页 (文件大小：54K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BAP50LX
Silicon PIN diode
Rev. 01 — 17 July 2007
Product data sheet
1. Product profile
1.1 General description
General purpose PIN diode in a SOD882T leadless ultra small plastic SMD package.
1.2 Features
I Low diode capacitance
I Low diode forward resistance
I For applications up to 3 GHz
1.3 Applications
I General RF applications
2. Pinning information
Table 1.
Discrete pinning
Pin
1
Description
cathode
Simplified outline
Symbol
[1]
2
anode
1
2
sym006
Transparent
top view
[1] The marking bar indicates the cathode.
3. Ordering information
Table 2.
Ordering information
Type number Package
Name
Description
Version
BAP50LX
-
leadless ultra small plastic package; 2 terminals;
SOD882T
body 1.0 × 0.6 × 0.4 mm
BAP50LX
NXP Semiconductors
Silicon PIN diode
4. Marking
Table 3.
Marking
Type number
Marking code
BAP50LX
LB
5. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VR
Parameter
Conditions
continuous
continuous
Tsp = 90 °C
Min
Max
50
Unit
V
reverse voltage
-
IF
forward current
-
50
mA
mW
°C
Ptot
Tstg
Tj
total power dissipation
storage temperature
junction temperature
-
150
+150
+150
−65
−65
°C
6. Thermal characteristics
Table 5.
Symbol
Rth(j-sp)
Thermal characteristics
Parameter
Conditions
Typ
Unit
thermal resistance from junction
to solder point
53
K/W
7. Characteristics
Table 6.
Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol
VF
Parameter
Conditions
IF = 50 mA
IR = 10 µA
Min
Typ
Max
Unit
forward voltage
reverse voltage
reverse current
diode capacitance
-
0.95
1.1
-
V
VR
50
-
-
-
V
IR
VR = 50 V
100
nA
Cd
see Figure 1; f = 1 MHz;
VR = 0 V
-
-
-
0.40
0.28
0.19
-
pF
pF
pF
VR = 1 V
0.55
0.35
VR = 5 V
rD
diode forward resistance see Figure 2; f = 100 MHz;
IF = 0.5 mA
IF = 1 mA
-
-
-
26
14
3
40
25
5
Ω
Ω
Ω
IF = 10 mA
ISL
isolation
see Figure 3; VR = 0 V;
f = 900 MHz
-
-
-
20.3
17.9
16.5
-
-
-
dB
dB
dB
f = 1800 MHz
f = 2450 MHz
BAP50LX_1
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 17 July 2007
2 of 8
BAP50LX
NXP Semiconductors
Silicon PIN diode
Table 6.
Characteristics …continued
Tamb = 25 °C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Lins
insertion loss
see Figure 4; IF = 0.5 mA;
f = 900 MHz
-
-
-
1.82
1.80
1.81
-
-
-
dB
dB
dB
f = 1800 MHz
f = 2450 MHz
Lins
insertion loss
insertion loss
see Figure 4; IF = 1 mA;
f = 900 MHz
-
-
-
1.07
1.06
1.08
-
-
-
dB
dB
dB
f = 1800 MHz
f = 2450 MHz
Lins
see Figure 4; IF = 10 mA;
f = 900 MHz
-
-
-
-
0.25
0.26
0.27
1.0
-
-
-
-
dB
dB
dB
µs
f = 1800 MHz
f = 2450 MHz
τL
charge carrier life time
series inductance
when switched from IF = 10 mA to
IR = 6 mA; RL = 100 Ω; measured at
IR = 3 mA
LS
IF = 100 mA; f = 100 MHz
-
0.4
-
nH
001aag629
001aag630
3
500
10
C
(fF)
d
r
D
(Ω)
400
2
10
300
200
100
0
10
1
−1
10
−1
2
0
4
8
12
16
20
10
1
10
10
V
(V)
I (mA)
F
R
f = 1 MHz; Tj = 25 °C.
f = 100 MHz; Tj = 25 °C.
Fig 1. Diode capacitance as a function of reverse
voltage; typical values
Fig 2. Forward resistance as a function of forward
current; typical values
BAP50LX_1
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 17 July 2007
3 of 8
BAP50LX
NXP Semiconductors
Silicon PIN diode
001aag631
001aag632
0
0
ISL
L
ins
(1)
(dB)
(dB)
−5
−10
−15
−20
−25
−1
−2
−3
−4
−5
(2)
(3)
500
1000
1500
2000
2500
3000
500
1000
1500
2000
2500
3000
f (MHz)
f (MHz)
Tamb = 25 °C
Tamb = 25 °C
(1) IF = 10 mA
(2) IF = 1 mA
Diode zero biased and inserted in series with a 50 Ω
stripline circuit.
(3) IF = 0.5 mA
Diode inserted in series with a 50 Ω stripline circuit
and biased via the analyzer Tee network.
Fig 3. Isolation of the diode in off-state as a function
of frequency; typical values
Fig 4. Insertion loss of the diode as a function of
frequency; typical values
BAP50LX_1
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 17 July 2007
4 of 8
BAP50LX
NXP Semiconductors
Silicon PIN diode
8. Package outline
Leadless ultra small plastic package; 2 terminals; body 1 x 0.6 x 0.4 mm
SOD882T
(2×)
L
1
(2×)
M
w
A
1
2
b (2×)
(2×)
M
w
B
e
1
A
A
1
y
A
E
D
(1)
B
0
0.5
1 mm
scale
DIMENSIONS (mm are the original dimensions)
A
max
1
UNIT
mm
e
L
1
A
b
D
E
w
y
1
0.40
0.36
0.55 0.65 1.05
0.45 0.55 0.95
0.30
0.22
0.04
0.65
0.1
0.03
Note
1. The marking bar indicates the cathode
REFERENCES
JEDEC JEITA
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
04-12-14
06-04-12
SOD882T
Fig 5. Package outline SOD882T
BAP50LX_1
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 17 July 2007
5 of 8
BAP50LX
NXP Semiconductors
Silicon PIN diode
9. Abbreviations
Table 7.
Abbreviations
Description
Acronym
PIN
P-type, Intrinsic, N-type
Surface Mounted Device
Radio Frequency
SMD
RF
10. Revision history
Table 8.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
BAP50LX_1
20070717
Product data sheet
-
-
BAP50LX_1
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 17 July 2007
6 of 8
BAP50LX
NXP Semiconductors
Silicon PIN diode
11. Legal information
11.1 Data sheet status
Document status[1][2]
Product status[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
malfunction of a NXP Semiconductors product can reasonably be expected to
11.2 Definitions
result in personal injury, death or severe property or environmental damage.
NXP Semiconductors accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or applications and therefore
such inclusion and/or use is at the customer’s own risk.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
11.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
11.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
12. Contact information
For additional information, please visit: http://www.nxp.com
For sales office addresses, send an email to: salesaddresses@nxp.com
BAP50LX_1
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 17 July 2007
7 of 8
BAP50LX
NXP Semiconductors
Silicon PIN diode
13. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1
1.2
1.3
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
2
Pinning information. . . . . . . . . . . . . . . . . . . . . . 1
Ordering information. . . . . . . . . . . . . . . . . . . . . 1
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics. . . . . . . . . . . . . . . . . . . 2
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 5
Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Revision history. . . . . . . . . . . . . . . . . . . . . . . . . 6
3
4
5
6
7
8
9
10
11
Legal information. . . . . . . . . . . . . . . . . . . . . . . . 7
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 7
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
11.1
11.2
11.3
11.4
12
13
Contact information. . . . . . . . . . . . . . . . . . . . . . 7
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2007.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 17 July 2007
Document identifier: BAP50LX_1
相关型号：
BAP51-02
Low diode capacitance Low diode forward resistance.continuous reverse voltage VR 50 V
TYSEMI
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