BAP70-02 [NXP]
Silicon PIN diode; 硅PIN二极管
| 型号： | BAP70-02 |
| 厂家： | 
NXP |
| 描述： | Silicon PIN diode |
| 文件： | 总8页 (文件大小：53K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
BAP70-02
Silicon PIN diode
Product specification
2002 Aug 06
Supersedes data of 2002 Jul 02
Philips Semiconductors
Product specification
Silicon PIN diode
BAP70-02
FEATURES
PINNING
• High voltage, current controlled RF resistor for
attenuators
PIN
DESCRIPTION
1
2
cathode
• Low diode capacitance
anode
• Very low series inductance.
APPLICATIONS
handbook, halfpage
1
2
• RF attenuators
• (SAT)TV
Top view
MAM405
• Car radio.
Marking code: K8.
DESCRIPTION
Fig.1 Simplified outline (SOD523) and symbol.
Planar PIN diode in a SOD523 ultra small SMD plastic
package.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
continuous reverse voltage
continuous forward current
total power dissipation
storage temperature
CONDITIONS
MIN.
MAX.
50
UNIT
VR
IF
−
−
−
V
100
mA
mW
°C
Ptot
Tstg
Tj
Ts = 90 °C
415
−65
−65
+150
+150
junction temperature
°C
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
VF
PARAMETER
forward voltage
CONDITIONS
IF = 50 mA
TYP.
MAX.
UNIT
0.9
1.1
V
IR
reverse leakage current
diode capacitance
VR = 50 V
−
20
−
nA
fF
fF
fF
fF
Ω
Cd
VR = 0 V; f = 1 MHz
VR = 1 V; f = 1 MHz
VR = 5 V; f = 1 MHz
VR = 20 V; f = 1 MHz
IF = 0.5 mA; f = 100 MHz
IF = 1 mA; f = 100 MHz
IF = 10 mA; f = 100 MHz
IF = 100 mA; f = 100 MHz
570
400
270
200
77
−
−
250
100
50
7
rD
diode forward resistance
40
Ω
5.4
1.4
Ω
1.9
−
Ω
τL
charge carrier life time
series inductance
when switched from IF = 10 mA to 1.25
IR = 6 mA; RL = 100 Ω;
measured at IR = 3 mA
µs
LS
IF = 100 mA; f = 100 MHz
0.6
−
nH
2002 Aug 06
2
Philips Semiconductors
Product specification
Silicon PIN diode
BAP70-02
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
VALUE
UNIT
Rth j-s
thermal resistance from junction to soldering point
145
K/W
GRAPHICAL DATA
MCE007
MCE008
3
10
600
handbook, halfpage
handbook, halfpage
C
d
r
D
(fF)
(Ω)
500
2
10
400
300
200
100
10
1
10
0
0
−1
2
1
10
10
5
10
15
20
I
(mA)
V
(V)
F
R
f = 100 MHz; Tj = 25 °C.
f = 1 MHz; Tj = 25 °C.
Fig.2 Forward resistance as a function of forward
current; typical values.
Fig.3 Diode capacitance as a function of reverse
voltage; typical values.
2002 Aug 06
3
Philips Semiconductors
Product specification
Silicon PIN diode
BAP70-02
PACKAGE OUTLINE
Plastic surface mounted package; 2 leads
SOD523
A
c
v
M
A
H
E
A
D
0
0.5
1 mm
scale
1
2
DIMENSIONS (mm are the original dimensions)
b
E
p
UNIT
A
b
c
D
E
H
v
p
E
0.35
0.25
0.2
0.1
0.7
0.5
1.3
1.1
0.9
0.7
1.7
1.5
mm
0.15
(1)
Note
1. The marking bar indicates the cathode.
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
98-11-25
SOD523
SC-79
2002 Aug 06
4
Philips Semiconductors
Product specification
Silicon PIN diode
BAP70-02
DATA SHEET STATUS
PRODUCT
STATUS(2)
DATA SHEET STATUS(1)
DEFINITIONS
Objective data
Development This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
Preliminary data
Product data
Qualification
This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
Production
This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Changes will be
communicated according to the Customer Product/Process Change
Notification (CPCN) procedure SNW-SQ-650A.
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
DEFINITIONS
DISCLAIMERS
Short-form specification
The data in a short-form
Life support applications
These products are not
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Right to make changes
Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
the use of any of these products, conveys no licence or title
under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.
Application information
Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
2002 Aug 06
5
Philips Semiconductors
Product specification
Silicon PIN diode
BAP70-02
NOTES
2002 Aug 06
6
Philips Semiconductors
Product specification
Silicon PIN diode
BAP70-02
NOTES
2002 Aug 06
7
Philips Semiconductors – a worldwide company
Contact information
For additional information please visit http://www.semiconductors.philips.com.
Fax: +31 40 27 24825
For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
© Koninklijke Philips Electronics N.V. 2002
SCA74
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
613516/03/pp8
Date of release: 2002 Aug 06
Document order number: 9397 750 10093
相关型号：
BAP70-03
High voltage, current controlled RF resistor forattenuators Very low series inductance.
TYSEMI
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