BAS16,235 [NXP]
BAS16 series - High-speed switching diodes TO-236 3-Pin;
| 型号： | BAS16,235 |
| 厂家： | 
NXP |
| 描述： | BAS16 series - High-speed switching diodes TO-236 3-Pin 光电二极管 |
| 文件： | 总20页 (文件大小：133K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BAS16 series
High-speed switching diodes
Rev. 05 — 25 August 2008
Product data sheet
1. Product profile
1.1 General description
High-speed switching diodes, encapsulated in small Surface-Mounted Device (SMD)
plastic packages.
Table 1.
Product overview
Type number
Package
NXP
Configuration
Package
configuration
JEITA
JEDEC
TO-236AB single
BAS16
SOT23
-
small
BAS16H
BAS16J
SOD123F
SOD323F
-
-
-
single
single
small and flat lead
SC-90
very small and flat
lead
BAS16L
SOD882
-
-
single
leadless ultra
small
BAS16T
SOT416
SOT666
SC-75
-
-
-
single
ultra small
BAS16VV
triple isolated
ultra small and flat
lead
BAS16VY
BAS16W
BAS316
BAS516
SOT363
SOT323
SOD323
SOD523
SC-88
SC-70
SC-76
SC-79
-
-
-
-
triple isolated
single
very small
very small
very small
single
single
ultra small and flat
lead
1.2 Features
I High switching speed: trr ≤ 4 ns
I Low leakage current
I Low capacitance
I Reverse voltage: VR ≤ 100 V
I Small SMD plastic packages
I Repetitive peak reverse voltage:
V
RRM ≤ 100 V
1.3 Applications
I High-speed switching
I General-purpose switching
BAS16 series
NXP Semiconductors
High-speed switching diodes
1.4 Quick reference data
Table 2.
Quick reference data
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Per diode
VR
IR
reverse voltage
-
-
-
-
-
-
100
0.5
4
V
reverse current
VR = 80 V
µA
ns
[1]
trr
reverse recovery time
[1] When switched from IF = 10 mA to IR = 10 mA; RL = 100 Ω; measured at IR = 1 mA.
2. Pinning information
Table 3.
Pin
BAS16; BAS16T; BAS16W
Pinning
Description
Simplified outline
Graphic symbol
1
2
3
anode
3
3
not connected
cathode
1
2
006aaa764
1
2
006aaa144
BAS16H; BAS16J; BAS316; BAS516
[1]
1
2
cathode
anode
2
1
1
2
006aab040
001aab540
BAS16L
[1]
1
2
cathode
anode
2
1
1
2
006aab040
Transparent
top view
BAS16VV; BAS16VY
1
2
3
4
5
6
anode (diode 1)
6
1
5
2
4
3
6
5
2
4
anode (diode 2)
anode (diode 3)
cathode (diode 3)
cathode (diode 2)
cathode (diode 1)
1
3
001aab555
006aab106
[1] The marking bar indicates the cathode.
BAS16_SER_5
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 05 — 25 August 2008
2 of 20
BAS16 series
NXP Semiconductors
High-speed switching diodes
3. Ordering information
Table 4.
Ordering information
Type number
Package
Name
Description
Version
BAS16
-
plastic surface-mounted package; 3 leads
plastic surface-mounted package; 2 leads
plastic surface-mounted package; 2 leads
SOT23
BAS16H
BAS16J
BAS16L
-
SOD123F
SOD323F
SOD882
SC-90
-
leadless ultra small plastic package; 2 terminals;
body 1.0 × 0.6 × 0.5 mm
BAS16T
BAS16VV
BAS16VY
BAS16W
BAS316
BAS516
SC-75
-
plastic surface-mounted package; 3 leads
plastic surface-mounted package; 6 leads
plastic surface-mounted package; 6 leads
plastic surface-mounted package; 3 leads
plastic surface-mounted package; 2 leads
plastic surface-mounted package; 2 leads
SOT416
SOT666
SOT363
SOT323
SOD323
SOD523
SC-88
SC-70
SC-76
SC-79
4. Marking
Table 5.
Marking codes
Type number
BAS16
Marking code[1]
A6*
A1
AR
S2
A6
53
BAS16H
BAS16J
BAS16L
BAS16T
BAS16VV
BAS16VY
BAS16W
BAS316
16*
A6*
A6
6
BAS516
[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
BAS16_SER_5
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 05 — 25 August 2008
3 of 20
BAS16 series
NXP Semiconductors
High-speed switching diodes
5. Limiting values
Table 6.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Per diode
VRRM
Parameter
Conditions
Min
Max
Unit
repetitive peak reverse
voltage
-
-
100
100
V
V
VR
IF
reverse voltage
forward current
BAS16
[1]
[2]
-
-
215
215
mA
mA
BAS16H
BAS16L
[1]
BAS16T
-
-
155
200
mA
mA
[1][3]
BAS16VV
BAS16VY
[1]
[1]
BAS16W
-
-
175
250
mA
mA
BAS16J
BAS316
BAS516
IFRM
IFSM
repetitive peak forward
current
tp ≤ 0.5 µs;
δ ≤ 0.25
-
500
mA
[4]
non-repetitive peak forward square wave
current
tp = 1 µs
-
-
-
4
A
A
A
tp = 1 ms
tp = 1 s
1
0.5
Ptot
total power dissipation
[1]
BAS16
T
T
amb ≤ 25 °C
amb ≤ 25 °C
-
-
250
380
mW
mW
[2][5]
[6]
BAS16H
[5][6]
[7]
-
-
-
830
550
250
mW
mW
mW
[5][6]
[7]
BAS16J
BAS16L
T
T
amb ≤ 25 °C
amb ≤ 25 °C
[2][5]
[6]
[1]
BAS16T
T
T
sp ≤ 90 °C
-
-
170
180
mW
mW
[1][3]
[5][8]
BAS16VV
amb ≤ 25 °C
[1][3]
[8]
BAS16VY
T
sp ≤ 85 °C
-
250
mW
[1]
BAS16W
BAS316
BAS516
T
T
T
amb ≤ 25 °C
sp ≤ 90 °C
sp ≤ 90 °C
-
-
-
200
400
500
mW
mW
mW
[1][6]
[1][5]
[6]
BAS16_SER_5
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 05 — 25 August 2008
4 of 20
BAS16 series
NXP Semiconductors
High-speed switching diodes
Table 6.
Limiting values …continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Per device
Tj
Parameter
Conditions
Min
Max
Unit
junction temperature
ambient temperature
storage temperature
-
150
°C
°C
°C
Tamb
−65
−65
+150
+150
Tstg
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Device mounted on an FR4 PCB with 60 µm copper strip line.
[3] Single diode loaded.
[4] Tj = 25 °C prior to surge.
[5] Reflow soldering is the only recommended soldering method.
[6] Soldering point of cathode tab.
[7] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.
[8] Soldering points at pins 4, 5 and 6.
6. Thermal characteristics
Table 7.
Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max Unit
Rth(j-a)
thermal resistance from
junction to ambient
in free air
[1]
[2][3]
[3][4]
[3][4]
[2][3]
BAS16
-
-
-
-
-
-
-
-
-
-
-
-
500
330
150
230
500
700
K/W
K/W
K/W
K/W
K/W
K/W
BAS16H
BAS16J
BAS16L
BAS16VV
[2][3]
[5]
[3][4]
[5]
-
-
-
-
410
625
K/W
K/W
[1]
BAS16W
Rth(j-t)
thermal resistance from
junction to tie-point
BAS16
-
-
-
-
330
300
K/W
K/W
BAS16W
BAS16_SER_5
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 05 — 25 August 2008
5 of 20
BAS16 series
NXP Semiconductors
High-speed switching diodes
Table 7.
Thermal characteristics …continued
Symbol
Parameter
Conditions
Min
Typ
Max Unit
Rth(j-sp)
thermal resistance from
junction to solder point
[6]
[6]
BAS16H
BAS16J
BAS16T
BAS16VY
BAS316
BAS516
-
-
-
-
-
-
-
-
-
-
-
-
70
K/W
K/W
K/W
K/W
K/W
K/W
55
350
260
150
120
[5][7]
[6]
[6]
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB with 60 µm copper strip line.
[3] Reflow soldering is the only recommended soldering method.
[4] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.
[5] Single diode loaded.
[6] Soldering point of cathode tab.
[7] Soldering points at pins 4, 5 and 6.
7. Characteristics
Table 8.
Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Per diode
Conditions
Min
Typ
Max Unit
[1]
VF
forward voltage
IF = 1 mA
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
715
855
1
mV
mV
V
IF = 10 mA
IF = 50 mA
IF = 150 mA
1.25
30
V
IR
reverse current
VR = 25 V
nA
µA
µA
µA
VR = 80 V
0.5
30
VR = 25 V; Tj = 150 °C
VR = 80 V; Tj = 150 °C
f = 1 MHz; VR = 0 V
50
Cd
diode capacitance
BAS16; BAS16H;
BAS16J; BAS16L;
BAS16T; BAS16VV;
BAS16VY; BAS16W;
BAS316
-
-
1.5
pF
BAS516
-
-
-
-
-
-
1
pF
ns
V
[2]
[3]
trr
reverse recovery time
forward recovery voltage
4
VFR
1.75
[1] Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
[2] When switched from IF = 10 mA to IR = 10 mA; RL = 100 Ω; measured at IR = 1 mA.
[3] When switched from IF = 10 mA; tr = 20 ns.
BAS16_SER_5
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 05 — 25 August 2008
6 of 20
BAS16 series
NXP Semiconductors
High-speed switching diodes
mbg704
006aab132
2
3
10
10
I
F
I
FSM
(A)
(mA)
2
10
10
10
1
(1) (2) (3) (4)
1
−1
−1
10
10
2
3
4
1
10
10
10
10
0
0.2
0.4
0.6
0.8
1.0
1.2
V
1.4
(V)
t
(µs)
p
F
(1) Tamb = 150 °C
(2) Tamb = 85 °C
(3) Tamb = 25 °C
(4) Tamb = −40 °C
Based on square wave currents.
Tj = 25 °C; prior to surge
Fig 1. Forward current as a function of forward
voltage; typical values
Fig 2. Non-repetitive peak forward current as a
function of pulse duration; maximum values
mbg446
006aab133
2
10
0.8
I
R
(1)
(2)
C
(pF
d
(µA)
10
)
0.6
1
−1
10
10
10
10
10
0.4
(3)
(4)
−2
−3
−4
−5
0.2
0
0
4
8
12
16
0
20
40
60
80
100
V
(V)
R
V
R
(V)
(1) Tamb = 150 °C
(2) Tamb = 85 °C
(3) Tamb = 25 °C
(4) Tamb = −40 °C
f = 1 MHz; Tamb = 25 °C
Fig 3. Reverse current as a function of reverse
voltage; typical values
Fig 4. Diode capacitance as a function of reverse
voltage; typical values
BAS16_SER_5
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 05 — 25 August 2008
7 of 20
BAS16 series
NXP Semiconductors
High-speed switching diodes
8. Test information
t
t
p
r
t
D.U.T.
10 %
I
+ I
F
t
F
rr
R
S
= 50 Ω
SAMPLING
OSCILLOSCOPE
t
R
i
= 50 Ω
V = V + I × R
S
R
F
(1)
90 %
V
R
mga881
input signal
output signal
(1) IR = 1 mA
Input signal: reverse pulse rise time tr = 0.6 ns; reverse voltage pulse duration tp = 100 ns; duty cycle δ = 0.05
Oscilloscope: rise time tr = 0.35 ns
Fig 5. Reverse recovery time test circuit and waveforms
I
1 kΩ
450 Ω
I
V
90 %
R
S
= 50 Ω
OSCILLOSCOPE
= 50 Ω
V
FR
D.U.T.
R
i
10 %
t
t
t
t
p
r
input signal
output signal
mga882
Input signal: forward pulse rise time tr = 20 ns; forward current pulse duration tp ≥ 100 ns; duty cycle δ ≤ 0.005
Fig 6. Forward recovery voltage test circuit and waveforms
9. Package outline
1.7
1.5
1.2
1.0
3.0
2.8
1.1
0.9
1
3
0.55
0.35
0.45
0.15
2.5 1.4
2.1 1.2
3.6 2.7
3.4 2.5
1
2
2
0.48
0.38
0.15
0.09
0.70
0.55
0.25
0.10
1.9
Dimensions in mm
04-11-04
Dimensions in mm
04-11-29
Fig 7. Package outline BAS16 (SOT23/TO-236AB)
Fig 8. Package outline BAS16H (SOD123F)
BAS16_SER_5
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 05 — 25 August 2008
8 of 20
BAS16 series
NXP Semiconductors
High-speed switching diodes
1.35
1.15
0.80
0.65
0.50
0.46
0.62
0.55
0.5
0.3
1
2
1
0.30
0.22
2.7 1.8
2.3 1.6
1.02
0.95
0.65
0.30
0.22
2
0.55
0.47
cathode marking on top side
03-04-17
0.40
0.25
0.25
0.10
Dimensions in mm
04-09-13
Dimensions in mm
Fig 9. Package outline BAS16J (SOD323F/SC-90)
Fig 10. Package outline BAS16L (SOD882)
1.7
1.5
0.6
0.5
1.8
1.4
0.95
0.60
6
5
4
3
0.45
0.15
0.3
0.1
1.75 0.9
1.45 0.7
1.7 1.3
1.5 1.1
pin 1 index
1
2
1
2
3
0.30
0.15
0.25
0.10
0.18
0.08
0.27
0.17
0.5
1
1
Dimensions in mm
04-11-04
Dimensions in mm
04-11-08
Fig 11. Package outline BAS16T (SOT416/SC-75)
Fig 12. Package outline BAS16VV (SOT666)
2.2
1.8
1.1
0.8
2.2
1.8
1.1
0.8
0.45
0.15
6
5
4
0.45
0.15
3
2.2 1.35
2.0 1.15
2.2 1.35
2.0 1.15
pin 1
index
1
2
1
2
3
0.4
0.3
0.25
0.10
0.25
0.10
0.3
0.2
0.65
1.3
1.3
Dimensions in mm
06-03-16
Dimensions in mm
04-11-04
Fig 13. Package outline BAS16VY (SOT363)
Fig 14. Package outline BAS16W (SOT323/SC-70)
BAS16_SER_5
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 05 — 25 August 2008
9 of 20
BAS16 series
NXP Semiconductors
High-speed switching diodes
0.85
0.75
0.65
0.58
1.35
1.15
1.1
0.8
0.45
0.15
1
1
1.65 1.25
1.55 1.15
2.7 1.8
2.3 1.6
2
2
0.40
0.25
0.25
0.10
0.34
0.26
0.17
0.11
Dimensions in mm
03-12-17
Dimensions in mm
02-12-13
Fig 15. Package outline BAS316 (SOD323/SC-76)
Fig 16. Package outline BAS516 (SOD523/SC-79)
10. Packing information
Table 9.
Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.[1]
Type number
Package
Description
Packing quantity
3000
-215
-115
-115
-
4000
8000
10000
-235
-135
-135
-315
-135
-
BAS16
SOT23
4 mm pitch, 8 mm tape and reel
4 mm pitch, 8 mm tape and reel
4 mm pitch, 8 mm tape and reel
2 mm pitch, 8 mm tape and reel
4 mm pitch, 8 mm tape and reel
2 mm pitch, 8 mm tape and reel
4 mm pitch, 8 mm tape and reel
4 mm pitch, 8 mm tape and reel; T1
4 mm pitch, 8 mm tape and reel; T2
4 mm pitch, 8 mm tape and reel
4 mm pitch, 8 mm tape and reel
2 mm pitch, 8 mm tape and reel
4 mm pitch, 8 mm tape and reel
-
-
BAS16H
BAS16J
BAS16L
BAS16T
BAS16VV
SOD123F
SOD323F
SOD882
SOT416
SOT666
-
-
-
-
-
-
-115
-
-
-
-
-315
-
-115
-
-
[2]
[3]
BAS16VY
SOT363
-115
-125
-115
-115
-
-
-
-
-
-
-
-
-135
-165
-135
-135
-
-
BAS16W
BAS316
BAS516
SOT323
SOD323
SOD523
-
-
-315
-
-115
-135
[1] For further information and the availability of packing methods, see Section 14.
[2] T1: normal taping
[3] T2: reverse taping
BAS16_SER_5
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 05 — 25 August 2008
10 of 20
BAS16 series
NXP Semiconductors
High-speed switching diodes
11. Soldering
3.3
2.9
1.9
solder lands
solder resist
2
3
1.7
solder paste
occupied area
0.6
0.7
(3×)
(3×)
Dimensions in mm
0.5
(3×)
0.6
(3×)
1
sot023_fr
Fig 17. Reflow soldering footprint BAS16 (SOT23/TO-236AB)
2.2
1.2
(2×)
1.4
(2×)
solder lands
solder resist
occupied area
2.6
4.6
Dimensions in mm
1.4
preferred transport direction during soldering
2.8
4.5
sot023_fw
Fig 18. Wave soldering footprint BAS16 (SOT23/TO-236AB)
BAS16_SER_5
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 05 — 25 August 2008
11 of 20
BAS16 series
NXP Semiconductors
High-speed switching diodes
4.4
4
2.9
1.6
solder lands
solder resist
2.1 1.6
1.1 1.2
solder paste
occupied area
1.1
(2×)
Reflow soldering is the only recommended soldering method.
Dimensions in mm
Fig 19. Reflow soldering footprint BAS16H (SOD123F)
3.05
2.2
2.1
solder lands
solder resist
1.65 0.95
0.5 (2×) 0.6 (2×)
solder paste
occupied area
0.5
(2×)
0.6
(2×)
Dimensions in mm
sod323f_fr
Reflow soldering is the only recommended soldering method.
Fig 20. Reflow soldering footprint BAS16J (SOD323F)
BAS16_SER_5
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 05 — 25 August 2008
12 of 20
BAS16 series
NXP Semiconductors
High-speed switching diodes
1.3
0.7
R0.05 (8×)
solder lands
solder resist
0.6 0.7
(2×) (2×)
0.9
solder paste
occupied area
0.3
(2×)
Dimensions in mm
0.4
(2×)
sod882_fr
Reflow soldering is the only recommended soldering method.
Fig 21. Reflow soldering footprint BAS16L (SOD882)
2.2
1.7
solder lands
solder resist
1
0.85
2
solder paste
occupied area
0.5
(3×)
Dimensions in mm
0.6
(3×)
1.3
sot416_fr
Fig 22. Reflow soldering footprint BAS16T (SOT416/SC-75)
BAS16_SER_5
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 05 — 25 August 2008
13 of 20
BAS16 series
NXP Semiconductors
High-speed switching diodes
2.75
2.45
2.1
1.6
solder lands
0.4
(6×)
0.3
(2×)
0.25
(2×)
placement area
0.538
0.55
(2×)
1.075
1.7
2
solder paste
occupied area
0.325 0.375
(4×) (4×)
Dimensions in mm
1.7
0.45
0.6
(4×)
(2×)
0.5
0.65
(4×)
(2×)
sot666_fr
Reflow soldering is the only recommended soldering method.
Fig 23. Reflow soldering footprint BAS16VV (SOT666)
2.65
solder lands
solder resist
0.4 (2×)
1.5
2.35
0.6
(4×)
0.5
(4×)
solder paste
0.5
(4×)
0.6
(2×)
occupied area
0.6
(4×)
Dimensions in mm
1.8
sot363_fr
Fig 24. Reflow soldering footprint BAS16VY (SOT363/SC-88)
BAS16_SER_5
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 05 — 25 August 2008
14 of 20
BAS16 series
NXP Semiconductors
High-speed switching diodes
1.5
solder lands
solder resist
2.5
0.3
4.5
occupied area
1.5
Dimensions in mm
preferred transport
direction during soldering
1.3
1.3
2.45
5.3
sot363_fw
Fig 25. Wave soldering footprint BAS16VY (SOT363/SC-88)
2.65
1.85
1.325
solder lands
solder resist
2
3
0.6
(3×)
solder paste
occupied area
1.3
2.35
0.5
(3×)
1
Dimensions in mm
0.55
(3×)
sot323_fr
Fig 26. Reflow soldering footprint BAS16W (SOT323/SC-70)
BAS16_SER_5
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 05 — 25 August 2008
15 of 20
BAS16 series
NXP Semiconductors
High-speed switching diodes
4.6
2.575
1.425
(3×)
solder lands
solder resist
occupied area
1.8
3.65 2.1
Dimensions in mm
preferred transport
direction during soldering
09
(2×)
sot323_fw
Fig 27. Wave soldering footprint BAS16W (SOT323/SC-70)
3.05
2.1
solder lands
solder resist
1.65 0.95
0.5 (2×) 0.6 (2×)
solder paste
occupied area
2.2
Dimensions in mm
0.5
(2×)
0.6
(2×)
sod323_fr
Fig 28. Reflow soldering footprint BAS316 (SOD323/SC-76)
BAS16_SER_5
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 05 — 25 August 2008
16 of 20
BAS16 series
NXP Semiconductors
High-speed switching diodes
5
2.9
1.5 (2×)
solder lands
solder resist
occupied area
1.2
(2×)
2.75
Dimensions in mm
preferred transport
direction during soldering
sod323_fw
Fig 29. Wave soldering footprint BAS316 (SOD323/SC-76)
2.15
1.1
solder lands
solder resist
0.5 0.6
1.2
(2×) (2×)
solder paste
occupied area
Dimensions in mm
0.7
(2×)
0.8
(2×)
sod523_fr
Reflow soldering is the only recommended soldering method.
Fig 30. Reflow soldering footprint BAS516 (SOD523/SC-79)
BAS16_SER_5
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 05 — 25 August 2008
17 of 20
BAS16 series
NXP Semiconductors
High-speed switching diodes
12. Revision history
Table 10. Revision history
Document ID
Release date
20080825
Data sheet status
Change notice
Supersedes
BAS16_SER_5
Product data sheet
-
BAS16_4
BAS16H_1
BAS16J_1
BAS16L_1
BAS16T_1
BAS16VV_BAS16VY_3
BAS16W_4
BAS316_4
BAS516_1
Modifications:
• The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
• Legal texts have been adapted to the new company name where appropriate.
• Table 5 “Marking codes”: marking code amended for BAS16W
• Table 6 “Limiting values”: for BAS16, BAS16T, BAS16W and BAS516 change of
VRRM maximum value from 85 V to 100 V
• Table 6 “Limiting values”: for BAS16, BAS16L, BAS16T, BAS16W and BAS516 change of
VR maximum value from 75 V to 100 V
• Table 8 “Characteristics”: change of IR condition VR from 75 V to 80 V for Tj = 25 °C
• Table 8 “Characteristics”: change of IR maximum value from 1.0 µA to 0.5 µA for VR = 80 V
and Tj = 25 °C
• Table 8 “Characteristics”: change of IR condition VR from 75 V to 80 V for Tj = 150 °C
• Section 13 “Legal information”: updated
BAS16_4
20011010
20050415
20070308
20030623
19980120
20070420
19990506
20040204
19980831
Product specification
Product data sheet
Product data sheet
Product specification
Product specification
Product data sheet
Product specification
Product specification
Product specification
-
-
-
-
-
-
-
-
-
BAS16_3
BAS16H_1
BAS16J_1
-
-
BAS16L_1
-
BAS16T_1
-
BAS16VV_BAS16VY_3
BAS16W_4
BAS316_4
BAS16VV_BAS16VY_2
BAS16W_3
BAS316_3
-
BAS516_1
BAS16_SER_5
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 05 — 25 August 2008
18 of 20
BAS16 series
NXP Semiconductors
High-speed switching diodes
13. Legal information
13.1 Data sheet status
Document status[1][2]
Product status[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
13.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
13.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
13.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
14. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
BAS16_SER_5
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 05 — 25 August 2008
19 of 20
BAS16 series
NXP Semiconductors
High-speed switching diodes
15. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1
1.2
1.3
1.4
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data. . . . . . . . . . . . . . . . . . . . . 2
2
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
Ordering information. . . . . . . . . . . . . . . . . . . . . 3
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal characteristics. . . . . . . . . . . . . . . . . . . 5
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 6
Test information. . . . . . . . . . . . . . . . . . . . . . . . . 8
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8
Packing information. . . . . . . . . . . . . . . . . . . . . 10
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 18
3
4
5
6
7
8
9
10
11
12
13
Legal information. . . . . . . . . . . . . . . . . . . . . . . 19
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 19
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 19
13.1
13.2
13.3
13.4
14
15
Contact information. . . . . . . . . . . . . . . . . . . . . 19
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2008.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 25 August 2008
Document identifier: BAS16_SER_5
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