BAS16T,115 [NXP]
BAS16 series - High-speed switching diodes SC-75 3-Pin;
| 型号： | BAS16T,115 |
| 厂家： | 
NXP |
| 描述： | BAS16 series - High-speed switching diodes SC-75 3-Pin |
| 文件： | 总21页 (文件大小：309K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BAS16 series
High-speed switching diodes
Rev. 6 — 24 September 2014
Product data sheet
1. Product profile
1.1 General description
High-speed switching diodes, encapsulated in small Surface-Mounted Device (SMD)
plastic packages.
Table 1.
Product overview
Type number
Package
NXP
Configuration
Package
configuration
JEITA
JEDEC
TO-236AB single
BAS16
SOT23
-
small
BAS16H
BAS16J
SOD123F
SOD323F
-
-
-
single
single
small and flat lead
SC-90
very small and flat
lead
BAS16L
SOD882
-
-
single
leadless ultra
small
BAS16T
SOT416
SOT666
SC-75
-
-
-
single
ultra small
BAS16VV
triple isolated
ultra small and flat
lead
BAS16VY
BAS16W
BAS316
BAS516
SOT363
SOT323
SOD323
SOD523
SC-88
SC-70
SC-76
SC-79
-
-
-
-
triple isolated
single
very small
very small
very small
single
single
ultra small and flat
lead
1.2 Features and benefits
High switching speed: trr 4 ns
Low leakage current
Low capacitance
Reverse voltage: VR 100 V
Small SMD plastic packages
Repetitive peak reverse voltage:
VRRM 100 V
AEC-Q101 qualified
1.3 Applications
High-speed switching
General-purpose switching
BAS16 series
NXP Semiconductors
High-speed switching diodes
1.4 Quick reference data
Table 2.
Quick reference data
Tamb = 25 C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Per diode
VR
IR
reverse voltage
reverse current
-
-
-
-
-
-
100
0.5
4
V
VR = 80 V
A
ns
trr
reverse recovery
time
IF = 10 mA; IR = 10 mA;
RL = 100 ; IR(meas) = 1 mA
2. Pinning information
Table 3.
Pin
Pinning
Description
Simplified outline
Graphic symbol
BAS16; BAS16T; BAS16W
1
2
3
anode
3
3
not connected
cathode
1
2
006aaa764
1
2
006aaa144
BAS16H; BAS16J; BAS316; BAS516
[1]
1
2
cathode
anode
2
1
1
2
006aab040
001aab540
BAS16L
[1]
1
2
cathode
anode
2
1
1
2
006aab040
Transparent
top view
BAS16VV; BAS16VY
1
2
3
4
5
6
anode (diode 1)
6
5
2
4
6
1
5
2
4
3
anode (diode 2)
anode (diode 3)
cathode (diode 3)
cathode (diode 2)
cathode (diode 1)
1
3
001aab555
006aab106
[1] The marking bar indicates the cathode.
BAS16_SER
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© NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
Rev. 6 — 24 September 2014
2 of 21
BAS16 series
NXP Semiconductors
High-speed switching diodes
3. Ordering information
Table 4.
Ordering information
Type number Package
Name
Description
Version
BAS16
TO-236AB
-
plastic surface-mounted package; 3 leads
plastic surface-mounted package; 2 leads
plastic surface-mounted package; 2 leads
SOT23
BAS16H
BAS16J
BAS16L
SOD123F
SOD323F
SOD882
SC-90
DFN1006-2
leadless ultra small plastic package; 2 terminals;
body 1.0 0.6 0.5 mm
BAS16T
BAS16VV
BAS16VY
BAS16W
BAS316
BAS516
SC-75
-
plastic surface-mounted package; 3 leads
plastic surface-mounted package; 6 leads
plastic surface-mounted package; 6 leads
plastic surface-mounted package; 3 leads
plastic surface-mounted package; 2 leads
plastic surface-mounted package; 2 leads
SOT416
SOT666
SOT363
SOT323
SOD323
SOD523
SC-88
SC-70
SC-76
SC-79
4. Marking
Table 5.
Marking codes
Type number
BAS16
Marking code[1]
A6*
A1
AR
S2
A6
53
BAS16H
BAS16J
BAS16L
BAS16T
BAS16VV
BAS16VY
BAS16W
BAS316
16*
A6*
A6
6
BAS516
[1] * = placeholder for manufacturing site code
5. Limiting values
Table 6.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Per diode
VRRM
Parameter
Conditions
Min
Max
Unit
repetitive peak reverse
voltage
-
-
100
100
V
V
VR
reverse voltage
BAS16_SER
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Product data sheet
Rev. 6 — 24 September 2014
3 of 21
BAS16 series
NXP Semiconductors
High-speed switching diodes
Table 6.
Limiting values …continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
forward current
BAS16
Conditions
Min
Max
Unit
IF
[1]
[2]
-
-
215
215
mA
mA
BAS16H
BAS16L
[1]
BAS16T
-
-
155
200
mA
mA
[1][3]
BAS16VV
BAS16VY
[1]
[1]
BAS16W
-
-
175
250
mA
mA
BAS16J
BAS316
BAS516
IFRM
IFSM
repetitive peak forward
current
tp 0.5 ms;
0.25
-
500
mA
non-repetitive peak forward square wave;
current
Tj(init) = 25 °C
tp = 1 s
-
-
-
4
A
A
A
tp = 1 ms
tp = 1 s
1
0.5
Ptot
total power dissipation
BAS16
[1]
[2]
Tamb 25 C
Tamb 25 C
-
-
-
-
-
-
-
-
-
-
-
250
380
830
550
250
170
180
250
200
400
500
mW
mW
mW
mW
mW
mW
mW
mW
mW
mW
mW
BAS16H
[5]
[5]
BAS16J
BAS16L
BAS16T
BAS16VV
BAS16VY
BAS16W
BAS316
BAS516
Tamb 25 C
Tamb 25 C
Tsp 90 C
Tamb 25 C
Tsp 85 C
Tamb 25 C
Tsp 90 C
Tsp 90 C
[2]
[1][4]
[1][3]
[1][3][6]
[1]
[1][4]
[1][4]
Per device
Tj
junction temperature
ambient temperature
storage temperature
-
150
C
C
C
Tamb
Tstg
65
65
+150
+150
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Device mounted on an FR4 PCB with 60 m copper strip line.
[3] Single diode loaded.
[4] Soldering point of cathode tab.
[5] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.
[6] Soldering points at pins 4, 5 and 6.
BAS16_SER
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© NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
Rev. 6 — 24 September 2014
4 of 21
BAS16 series
NXP Semiconductors
High-speed switching diodes
6. Thermal characteristics
Table 7.
Symbol
Rth(j-a)
Thermal characteristics
Parameter
Conditions
Min
Typ
Max Unit
thermal resistance from
junction to ambient
in free air
[1]
[2]
BAS16
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
500
330
150
230
500
700
410
625
K/W
K/W
K/W
K/W
K/W
K/W
K/W
K/W
BAS16H
[3]
[3]
BAS16J
BAS16L
BAS16VV
[2]
[2][4]
[3][4]
[1]
BAS16W
Rth(j-sp)
thermal resistance from
junction to solder point
BAS16
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
330
70
K/W
K/W
K/W
K/W
K/W
K/W
K/W
K/W
[5]
[5]
BAS16H
BAS16J
BAS16T
BAS16VY
BAS16W
BAS316
BAS516
55
350
260
300
150
120
[4][6]
[5]
[5]
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB with 60 m copper strip line.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.
[4] Single diode loaded.
[5] Soldering point of cathode tab.
[6] Soldering points at pins 4, 5 and 6.
BAS16_SER
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© NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
Rev. 6 — 24 September 2014
5 of 21
BAS16 series
NXP Semiconductors
High-speed switching diodes
7. Characteristics
Table 8.
Characteristics
Tamb = 25 C unless otherwise specified.
Symbol Parameter
Per diode
Conditions
Min
Typ
Max Unit
[1]
VF
forward voltage
IF = 1 mA
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
715
855
1
mV
mV
V
IF = 10 mA
IF = 50 mA
IF = 150 mA
1.25
30
V
IR
reverse current
VR = 25 V
nA
A
A
A
VR = 80 V
0.5
30
VR = 25 V; Tj = 150 C
VR = 80 V; Tj = 150 C
f = 1 MHz; VR = 0 V
50
Cd
diode capacitance
BAS16; BAS16H;
BAS16J; BAS16L;
BAS16T; BAS16VV;
BAS16VY; BAS16W;
BAS316
-
-
1.5
pF
BAS516
-
-
-
-
1
4
pF
ns
trr
reverse recovery time
IF = 10 mA; IR = 10 mA;
RL = 100 ;
IR(meas) = 1 mA
VFR
forward recovery voltage IF = 10 mA; tr = 20 ns
-
-
1.75
V
[1] Pulse test: tp 300 s; 0.02.
BAS16_SER
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Product data sheet
Rev. 6 — 24 September 2014
6 of 21
BAS16 series
NXP Semiconductors
High-speed switching diodes
mbg704
006aab132
2
3
10
10
I
F
I
FSM
(A)
(mA)
2
10
10
10
1
(1) (2) (3) (4)
1
−1
−1
10
10
2
3
4
1
10
10
10
10
0
0.2
0.4
0.6
0.8
1.0
1.2
V
1.4
(V)
t
(μs)
p
F
(1) Tamb = 150 C
(2) Tamb = 85 C
(3) Tamb = 25 C
Based on square wave currents.
Tj(init) = 25 C
(4)
Tamb = 40 C
Fig 1. Forward current as a function of forward
voltage; typical values
Fig 2. Non-repetitive peak forward current as a
function of pulse duration; maximum values
mbg446
006aab133
2
10
0.8
I
R
(1)
(2)
C
(pF
d
(μA)
10
)
0.6
1
−1
10
10
10
10
10
0.4
(3)
(4)
−2
−3
−4
−5
0.2
0
0
4
8
12
16
0
20
40
60
80
100
V
R
(V)
V
(V)
R
(1) Tamb = 150 C
(2) Tamb = 85 C
(3) Tamb = 25 C
f = 1 MHz; Tamb = 25 C
(4)
Tamb = 40 C
Fig 3. Reverse current as a function of reverse
voltage; typical values
Fig 4. Diode capacitance as a function of reverse
voltage; typical values
BAS16_SER
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Product data sheet
Rev. 6 — 24 September 2014
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BAS16 series
NXP Semiconductors
High-speed switching diodes
8. Test information
t
t
p
r
t
D.U.T.
10 %
I
+ I
F
F
t
rr
R
S
= 50 Ω
SAMPLING
OSCILLOSCOPE
t
R
i
= 50 Ω
V = V + I × R
S
R
F
(1)
90 %
V
R
mga881
input signal
output signal
(1) IR = 1 mA
Input signal: reverse pulse rise time tr = 0.6 ns; reverse voltage pulse duration tp = 100 ns; duty cycle = 0.05
Oscilloscope: rise time tr = 0.35 ns
Fig 5. Reverse recovery time test circuit and waveforms
I
1 kΩ
450 Ω
I
V
90 %
R
S
= 50 Ω
OSCILLOSCOPE
= 50 Ω
V
FR
D.U.T.
R
i
10 %
t
t
t
t
p
r
input signal
output signal
mga882
Input signal: forward pulse rise time tr = 20 ns; forward current pulse duration tp 100 ns; duty cycle 0.005
Fig 6. Forward recovery voltage test circuit and waveforms
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
BAS16_SER
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© NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
Rev. 6 — 24 September 2014
8 of 21
BAS16 series
NXP Semiconductors
High-speed switching diodes
9. Package outline
1.7
1.5
1.2
1.0
3.0
2.8
1.1
0.9
1
3
0.55
0.35
0.45
0.15
2.5 1.4
2.1 1.2
3.6 2.7
3.4 2.5
1
2
2
0.48
0.38
0.15
0.09
0.70
0.55
0.25
0.10
1.9
Dimensions in mm
04-11-04
Dimensions in mm
04-11-29
Fig 7. Package outline BAS16 (SOT23/TO-236AB)
Fig 8. Package outline BAS16H (SOD123F)
1.35
1.15
0.80
0.65
0.50
0.46
0.62
0.55
0.5
0.3
1
2
1
0.30
0.22
2.7 1.8
2.3 1.6
1.02
0.95
0.65
0.30
0.22
2
0.55
0.47
cathode marking on top side (if applicable)
03-04-17
0.40
0.25
0.25
0.10
Dimensions in mm
04-09-13
Dimensions in mm
Fig 9. Package outline BAS16J (SOD323F/SC-90)
Fig 10. Package outline BAS16L (SOD882/DFN1006-2)
1.7
1.5
0.6
0.5
1.8
1.4
0.95
0.60
6
5
4
3
0.45
0.15
0.3
0.1
1.75 0.9
1.45 0.7
1.7 1.3
1.5 1.1
pin 1 index
1
2
1
2
3
0.30
0.15
0.25
0.10
0.18
0.08
0.27
0.17
0.5
1
1
Dimensions in mm
04-11-04
Dimensions in mm
04-11-08
Fig 11. Package outline BAS16T (SOT416/SC-75)
Fig 12. Package outline BAS16VV (SOT666)
BAS16_SER
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Product data sheet
Rev. 6 — 24 September 2014
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BAS16 series
NXP Semiconductors
High-speed switching diodes
2.2
1.8
1.1
0.8
2.2
1.8
1.1
0.8
0.45
0.15
6
5
4
0.45
0.15
3
2.2 1.35
2.0 1.15
2.2 1.35
2.0 1.15
pin 1
index
1
2
1
2
3
0.25
0.10
0.3
0.2
0.4
0.3
0.25
0.10
0.65
1.3
1.3
Dimensions in mm
06-03-16
Dimensions in mm
04-11-04
Fig 13. Package outline BAS16VY (SOT363)
Fig 14. Package outline BAS16W (SOT323/SC-70)
0.85
0.75
0.65
0.58
1.35
1.15
1.1
0.8
0.45
0.15
1
1
1.65 1.25
1.55 1.15
2.7 1.8
2.3 1.6
2
2
0.40
0.25
0.25
0.10
0.34
0.26
0.17
0.11
Dimensions in mm
03-12-17
Dimensions in mm
02-12-13
Fig 15. Package outline BAS316 (SOD323/SC-76)
Fig 16. Package outline BAS516 (SOD523/SC-79)
BAS16_SER
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Product data sheet
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BAS16 series
NXP Semiconductors
High-speed switching diodes
10. Soldering
3.3
2.9
1.9
solder lands
solder resist
2
3
1.7
solder paste
occupied area
0.6
0.7
(3×)
(3×)
Dimensions in mm
0.5
(3×)
0.6
(3×)
1
sot023_fr
Fig 17. Reflow soldering footprint BAS16 (SOT23/TO-236AB)
2.2
1.2
(2×)
1.4
(2×)
solder lands
solder resist
occupied area
2.6
4.6
Dimensions in mm
1.4
preferred transport direction during soldering
2.8
4.5
sot023_fw
Fig 18. Wave soldering footprint BAS16 (SOT23/TO-236AB)
BAS16_SER
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Product data sheet
Rev. 6 — 24 September 2014
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BAS16 series
NXP Semiconductors
High-speed switching diodes
4.4
4
2.9
1.6
solder lands
solder resist
2.1 1.6
1.1 1.2
solder paste
occupied area
1.1
(2×)
Dimensions in mm
Fig 19. Reflow soldering footprint BAS16H (SOD123F)
3.05
2.2
2.1
solder lands
solder resist
1.65 0.95
0.5 (2×) 0.6 (2×)
solder paste
occupied area
0.5
(2×)
Dimensions in mm
0.6
(2×)
sod323f_fr
Fig 20. Reflow soldering footprint BAS16J (SOD323F)
BAS16_SER
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BAS16 series
NXP Semiconductors
High-speed switching diodes
1.3
0.7
R0.05 (8×)
solder lands
solder resist
0.6 0.7 0.8
(2×) (2×) (2×)
0.9
solder paste
occupied area
0.3
(2×)
Dimensions in mm
0.4
(2×)
0.5
sod882_fr
(2×)
Fig 21. Reflow soldering footprint BAS16L (SOD882/DFN1006-2)
2.2
1.7
solder lands
solder resist
1
0.85
2
solder paste
0.5
(3×)
occupied area
Dimensions in mm
0.6
(3×)
1.3
sot416_fr
Fig 22. Reflow soldering footprint BAS16T (SOT416/SC-75)
BAS16_SER
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Product data sheet
Rev. 6 — 24 September 2014
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BAS16 series
NXP Semiconductors
High-speed switching diodes
2.75
2.45
2.1
1.6
solder lands
0.4
(6×)
0.3
(2×)
0.25
(2×)
placement area
0.538
0.55
(2×)
1.075
1.7
2
solder paste
occupied area
0.325 0.375
(4×) (4×)
Dimensions in mm
1.7
0.45
0.6
(4×)
(2×)
0.5
0.65
(4×)
(2×)
sot666_fr
Fig 23. Reflow soldering footprint BAS16VV (SOT666)
2.65
solder lands
solder resist
0.4 (2×)
1.5
2.35
0.6
(4×)
0.5
(4×)
solder paste
0.5
(4×)
0.6
(2×)
occupied area
0.6
(4×)
Dimensions in mm
sot363_fr
1.8
Fig 24. Reflow soldering footprint BAS16VY (SOT363/SC-88)
BAS16_SER
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Product data sheet
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BAS16 series
NXP Semiconductors
High-speed switching diodes
1.5
solder lands
solder resist
2.5
0.3
4.5
occupied area
1.5
Dimensions in mm
preferred transport
direction during soldering
1.3
1.3
2.45
5.3
sot363_fw
Fig 25. Wave soldering footprint BAS16VY (SOT363/SC-88)
2.65
1.85
1.325
solder lands
solder resist
2
3
0.6
(3×)
solder paste
occupied area
1.3
2.35
0.5
(3×)
1
Dimensions in mm
0.55
(3×)
sot323_fr
Fig 26. Reflow soldering footprint BAS16W (SOT323/SC-70)
BAS16_SER
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Product data sheet
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BAS16 series
NXP Semiconductors
High-speed switching diodes
4.6
2.575
1.425
(3×)
solder lands
solder resist
occupied area
1.8
3.65 2.1
Dimensions in mm
preferred transport
direction during soldering
09
(2×)
sot323_fw
Fig 27. Wave soldering footprint BAS16W (SOT323/SC-70)
3.05
2.1
solder lands
solder resist
1.65 0.95
0.5 (2×) 0.6 (2×)
solder paste
occupied area
2.2
Dimensions in mm
0.5
(2×)
0.6
(2×)
sod323_fr
Fig 28. Reflow soldering footprint BAS316 (SOD323/SC-76)
BAS16_SER
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Product data sheet
Rev. 6 — 24 September 2014
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BAS16 series
NXP Semiconductors
High-speed switching diodes
5
2.9
1.5 (2×)
solder lands
solder resist
occupied area
1.2
(2×)
2.75
Dimensions in mm
preferred transport
direction during soldering
sod323_fw
Fig 29. Wave soldering footprint BAS316 (SOD323/SC-76)
2.15
1.4
solder lands
solder resist
0.5 0.6
(2×) (2×)
1.2
solder paste
occupied area
Dimensions in mm
0.4
(2×)
0.5
(2×)
sod523_fr
Fig 30. Reflow soldering footprint BAS516 (SOD523/SC-79)
BAS16_SER
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
Rev. 6 — 24 September 2014
17 of 21
BAS16 series
NXP Semiconductors
High-speed switching diodes
11. Revision history
Table 9.
Revision history
Document ID
BAS16_SER_6
Modifications:
Release date
Data sheet status
Change notice
Supersedes
20140924
Product data sheet
-
BAS16_SER_5
• Section 1.2 “Features and benefits”: updated
• Section 4 “Marking”: updated
• Table 6 “Limiting values”: updated
• Section 8 “Test information”: updated
• Section 12 “Legal information”: updated
BAS16_SER_5
20080825
Product data sheet
-
BAS16_4
BAS16H_1
BAS16J_1
BAS16L_1
BAS16T_1
BAS16VV_BAS16VY_3
BAS16W_4
BAS316_4
BAS516_1
BAS16_4
20011010
20050415
20070308
20030623
19980120
20070420
19990506
20040204
19980831
Product specification
Product data sheet
Product data sheet
Product specification
Product specification
Product data sheet
Product specification
Product specification
Product specification
-
-
-
-
-
-
-
-
-
BAS16_3
BAS16H_1
BAS16J_1
-
-
BAS16L_1
-
BAS16T_1
-
BAS16VV_BAS16VY_3
BAS16W_4
BAS316_4
BAS16VV_BAS16VY_2
BAS16W_3
BAS316_3
-
BAS516_1
BAS16_SER
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© NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
Rev. 6 — 24 September 2014
18 of 21
BAS16 series
NXP Semiconductors
High-speed switching diodes
12. Legal information
12.1 Data sheet status
Document status[1][2]
Product status[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
Suitability for use in automotive applications — This NXP
12.2 Definitions
Semiconductors product has been qualified for use in automotive
applications. Unless otherwise agreed in writing, the product is not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors and its suppliers accept no liability for
inclusion and/or use of NXP Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at the customer's own
risk.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of their applications
and products using NXP Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the customer’s applications and
products planned, as well as for the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
12.3 Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information. NXP Semiconductors takes no
responsibility for the content in this document if provided by an information
source outside of NXP Semiconductors.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
BAS16_SER
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
Rev. 6 — 24 September 2014
19 of 21
BAS16 series
NXP Semiconductors
High-speed switching diodes
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
13. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
BAS16_SER
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
Rev. 6 — 24 September 2014
20 of 21
BAS16 series
NXP Semiconductors
High-speed switching diodes
14. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1
1.2
1.3
1.4
General description . . . . . . . . . . . . . . . . . . . . . 1
Features and benefits. . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data . . . . . . . . . . . . . . . . . . . . 2
2
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
Ordering information. . . . . . . . . . . . . . . . . . . . . 3
Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . 5
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 6
Test information. . . . . . . . . . . . . . . . . . . . . . . . . 8
Quality information . . . . . . . . . . . . . . . . . . . . . . 8
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 18
3
4
5
6
7
8
8.1
9
10
11
12
Legal information. . . . . . . . . . . . . . . . . . . . . . . 19
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 19
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 20
12.1
12.2
12.3
12.4
13
14
Contact information. . . . . . . . . . . . . . . . . . . . . 20
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP Semiconductors N.V. 2014.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 24 September 2014
Document identifier: BAS16_SER
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