BAS19 [NXP]
General purpose diodes; 通用二极管
| 型号： | BAS19 |
| 厂家： | 
NXP |
| 描述： | General purpose diodes |
| 文件： | 总12页 (文件大小：60K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
BAS19; BAS20; BAS21
General purpose diodes
1999 May 26
Product specification
Supersedes data of 1996 Sep 10
Philips Semiconductors
Product specification
General purpose diodes
BAS19; BAS20; BAS21
FEATURES
MARKING
PINNING
• Small plastic SMD package
• Switching speed: max. 50 ns
• General application
MARKING
CODE (1)
PIN
DESCRIPTION
anode
TYPE NUMBER
1
2
3
BAS19
BAS20
BAS21
JP
JR
JS
not connected
cathode
• Continuous reverse voltage:
max. 100 V; 150 V; 200 V
• Repetitive peak reverse voltage:
max. 120 V; 200 V; 250 V
Note
1.
= p: Made in Hong Kong.
= t: Made in Malaysia.
• Repetitive peak forward current:
max. 625 mA.
APPLICATIONS
• General purpose switching in e.g.
handbookpa2ge
1
surface mounted circuits.
2
n.c.
1
DESCRIPTION
3
The BAS19, BAS20, BAS21 are
general purpose diodes fabricated in
planar technology, and encapsulated
in small SOT23 plastic SMD
packages.
3
MAM185
Fig.1 Simplified outline (SOT23) and symbol.
1999 May 26
2
Philips Semiconductors
Product specification
General purpose diodes
BAS19; BAS20; BAS21
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VRRM
repetitive peak reverse voltage
BAS19
−
−
−
120
V
V
V
BAS20
200
250
BAS21
VR
continuous reverse voltage
BAS19
−
−
−
−
−
100
150
200
200
625
V
V
V
BAS20
BAS21
IF
continuous forward current
repetitive peak forward current
see Fig.2; note 1
mA
mA
IFRM
IFSM
non-repetitive peak forward current square wave; Tj = 25 °C prior to
surge; see Fig.4
t = 1 µs
−
−
−
−
9
A
t = 100 µs
t = 10 ms
3
A
1.7
250
+150
150
A
Ptot
Tstg
Tj
total power dissipation
storage temperature
junction temperature
Tamb = 25 °C; note 1
mW
°C
°C
−65
−
Note
1. Device mounted on an FR4 printed-circuit board.
1999 May 26
3
Philips Semiconductors
Product specification
General purpose diodes
BAS19; BAS20; BAS21
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
forward voltage
CONDITIONS
MAX.
UNIT
VF
see Fig.3
IF = 100 mA
IF = 200 mA
see Fig.5
1
V
V
1.25
IR
reverse current
BAS19
VR = 100 V
100
100
100
100
100
100
5
nA
µA
nA
µA
nA
µA
pF
ns
VR = 100 V; Tj = 150 °C
VR = 150 V
BAS20
BAS21
VR = 150 V; Tj = 150 °C
VR = 200 V
VR = 200 V; Tj = 150 °C
f = 1 MHz; VR = 0; see Fig.6
Cd
trr
diode capacitance
reverse recovery time
when switched from IF = 30 mA to
IR = 30 mA; RL = 100 Ω; measured at
IR = 3 mA; see Fig.8
50
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
thermal resistance from junction to tie-point
thermal resistance from junction to ambient note 1
CONDITIONS
VALUE
330
UNIT
Rth j-tp
Rth j-a
K/W
K/W
500
Note
1. Device mounted on an FR4 printed-circuit board.
1999 May 26
4
Philips Semiconductors
Product specification
General purpose diodes
BAS19; BAS20; BAS21
GRAPHICAL DATA
MBG442
MBG384
600
300
handbook, halfpage
handbook, halfpage
I
I
F
F
(mA)
(mA)
(1)
(2)
(3)
400
200
200
100
0
0
0
o
1
2
0
100
200
V
(V)
T
( C)
F
amb
(1) Tj = 150 °C; typical values.
(2) Tj = 25 °C; typical values.
(3) Tj = 25 °C; maximum values.
Device mounted on an FR4 printed-circuit board.
Fig.2 Maximum permissible continuous forward
current as a function of ambient temperature.
Fig.3 Forward current as a function of
forward voltage.
MBG703
2
10
I
FSM
(A)
10
1
−1
10
2
3
4
1
10
10
10
10
t
(µs)
p
Based on square wave currents.
Tj = 25 °C prior to surge.
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
1999 May 26
5
Philips Semiconductors
Product specification
General purpose diodes
BAS19; BAS20; BAS21
MBG381
MBG447
2
10
1.0
handbook, halfpage
handbook, halfpage
C
I
d
R
(pF)
0.8
(µA)
10
(1)
(2)
1
1
0.6
0.4
10
10
2
0.2
0
o
0
100
200
2
4
6
8
T ( C)
j
V
(V)
R
(1) VR = VRmax; maximum values.
(2) VR = VRmax; typical values.
f = 1 MHz; Tj = 25 °C.
Fig.5 Reverse current as a function of
junction temperature.
Fig.6 Diode capacitance as a function of reverse
voltage; typical values.
MBG445
300
handbook, halfpage
V
R
(V)
(1)
200
(2)
(3)
100
0
0
o
100
200
T
( C)
amb
(1) BAS21.
(2) BAS20.
(3) BAS19.
Fig.7 Maximum permissible continuous reverse
voltage as a function of the
ambient temperature.
1999 May 26
6
Philips Semiconductors
Product specification
General purpose diodes
BAS19; BAS20; BAS21
t
t
p
r
t
D.U.T.
I
10%
I
t
R
= 50 Ω
F
F
rr
S
SAMPLING
t
OSCILLOSCOPE
R = 50 Ω
V = V
I x R
F S
R
i
(1)
90%
V
R
MGA881
input signal
output signal
(1) IR = 3 mA.
Fig.8 Reverse recovery voltage test circuit and waveforms.
1999 May 26
7
Philips Semiconductors
Product specification
General purpose diodes
BAS19; BAS20; BAS21
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
SOT23
D
B
E
A
X
H
v
M
A
E
3
Q
A
A
1
c
1
2
e
1
b
p
w M
B
L
p
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
1
UNIT
b
c
D
E
e
e
H
L
Q
v
w
A
p
p
1
E
max.
1.1
0.9
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
2.5
2.1
0.45
0.15
0.55
0.45
mm
0.1
1.9
0.95
0.2
0.1
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
97-02-28
SOT23
1999 May 26
8
Philips Semiconductors
Product specification
General purpose diodes
BAS19; BAS20; BAS21
DEFINITIONS
Data Sheet Status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1999 May 26
9
Philips Semiconductors
Product specification
General purpose diodes
BAS19; BAS20; BAS21
NOTES
1999 May 26
10
Philips Semiconductors
Product specification
General purpose diodes
BAS19; BAS20; BAS21
NOTES
1999 May 26
11
Philips Semiconductors – a worldwide company
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For all other countries apply to: Philips Semiconductors,
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5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825
© Philips Electronics N.V. 1999
SCA65
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
115002/03/pp12
Date of release: 1999 May 26
Document order number: 9397 750 05885
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