BAS20T/R [NXP]
0.2A, 200V, SILICON, SIGNAL DIODE, TO-236AB, PLASTIC PACKAGE-3;
| 型号： | BAS20T/R |
| 厂家： | 
NXP |
| 描述： | 0.2A, 200V, SILICON, SIGNAL DIODE, TO-236AB, PLASTIC PACKAGE-3 光电二极管 |
| 文件： | 总10页 (文件大小：127K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
BAS19; BAS20; BAS21
General purpose diodes
Product data sheet
2003 Mar 20
Supersedes data of 1999 May 26
NXP Semiconductors
Product data sheet
General purpose diodes
BAS19; BAS20; BAS21
FEATURES
PINNING
• Small plastic SMD package
PIN
1
DESCRIPTION
• Switching speed: max. 50 ns
anode
• General application
2
not connected
cathode
• Continuous reverse voltage: max. 100 V; 150 V; 200 V
3
• Repetitive peak reverse voltage: max. 120 V; 200 V;
250 V
• Repetitive peak forward current: max. 625 mA.
APPLICATIONS
• General purpose switching in e.g. surface mounted
circuits.
handbook, a2ge
1
2
n.c.
DESCRIPTION
1
The BAS19, BAS20 and BAS21 are general purpose
diodes fabricated in planar technology, and encapsulated
in a small SOT23 plastic SMD package.
3
3
MAM185
MARKING
TYPE NUMBER
BAS19
MARKING CODE (1)
JP∗
JR∗
JS∗
BAS20
BAS21
Fig.1 Simplified outline (SOT23) and symbol.
Note
1. ∗ = p: Made in Hong Kong.
∗ = t: Made in Malaysia.
∗ = W: Made in China.
2003 Mar 20
2
NXP Semiconductors
Product data sheet
General purpose diodes
BAS19; BAS20; BAS21
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VRRM
repetitive peak reverse voltage
BAS19
−
−
−
120
V
V
V
BAS20
200
250
BAS21
VR
continuous reverse voltage
BAS19
−
−
−
−
−
100
150
200
200
625
V
V
V
BAS20
BAS21
IF
continuous forward current
repetitive peak forward current
see Fig.2; note 1
mA
mA
IFRM
IFSM
non-repetitive peak forward current square wave; Tj = 25 °C prior to
surge; see Fig.4
t = 1 µs
−
−
−
−
9
A
t = 100 µs
t = 10 ms
3
A
1.7
250
+150
150
A
Ptot
Tstg
Tj
total power dissipation
storage temperature
junction temperature
Tamb = 25 °C; note 1
mW
°C
°C
−65
−
Note
1. Device mounted on an FR4 printed-circuit board.
2003 Mar 20
3
NXP Semiconductors
Product data sheet
General purpose diodes
BAS19; BAS20; BAS21
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
forward voltage
CONDITIONS
MAX.
UNIT
VF
see Fig.3
IF = 100 mA
IF = 200 mA
see Fig.5
1
V
V
1.25
IR
reverse current
BAS19
VR = 100 V
100
100
100
100
100
100
5
nA
µA
nA
µA
nA
µA
pF
ns
VR = 100 V; Tj = 150 °C
VR = 150 V
BAS20
BAS21
VR = 150 V; Tj = 150 °C
VR = 200 V
VR = 200 V; Tj = 150 °C
f = 1 MHz; VR = 0; see Fig.6
Cd
trr
diode capacitance
reverse recovery time
when switched from IF = 30 mA to
IR = 30 mA; RL = 100 Ω; measured at
IR = 3 mA; see Fig.8
50
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
thermal resistance from junction to tie-point
thermal resistance from junction to ambient note 1
CONDITIONS
VALUE
UNIT
Rth j-tp
Rth j-a
330
500
K/W
K/W
Note
1. Device mounted on an FR4 printed-circuit board.
2003 Mar 20
4
NXP Semiconductors
Product data sheet
General purpose diodes
BAS19; BAS20; BAS21
GRAPHICAL DATA
MBG442
MBG384
600
300
handbook, halfpage
handbook, halfpage
I
I
F
F
(mA)
(mA)
(1)
(2)
(3)
400
200
200
100
0
0
0
o
1
2
0
100
200
V
(V)
T
( C)
F
amb
(1) Tj = 150 °C; typical values.
(2) Tj = 25 °C; typical values.
(3) Tj = 25 °C; maximum values.
Device mounted on an FR4 printed-circuit board.
Fig.2 Maximum permissible continuous forward
current as a function of ambient
temperature.
Fig.3 Forward current as a function of forward
voltage.
MBG703
2
10
I
FSM
(A)
10
1
−1
10
2
3
4
1
10
10
10
10
t
(µs)
p
Based on square wave currents.
Tj = 25 °C prior to surge.
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
2003 Mar 20
5
NXP Semiconductors
Product data sheet
General purpose diodes
BAS19; BAS20; BAS21
MBG381
MBG447
2
10
1.0
handbook, halfpage
handbook, halfpage
C
I
d
R
(pF)
0.8
(µA)
10
(1)
(2)
1
1
0.6
0.4
10
10
2
0.2
0
o
0
100
200
2
4
6
8
T ( C)
j
V
(V)
R
(1) VR = VRmax; maximum values.
(2) VR = VRmax; typical values.
f = 1 MHz; Tj = 25 °C.
Fig.5 Reverse current as a function of junction
temperature.
Fig.6 Diode capacitance as a function of reverse
voltage; typical values.
MBG445
300
handbook, halfpage
V
R
(V)
(1)
200
(2)
(3)
100
0
o
0
100
200
T
( C)
amb
(1) BAS21.
(2) BAS20.
(3) BAS19.
Fig.7 Maximum permissible continuous reverse
voltage as a function of the ambient
temperature.
2003 Mar 20
6
NXP Semiconductors
Product data sheet
General purpose diodes
BAS19; BAS20; BAS21
t
t
p
r
t
D.U.T.
I
10%
I
t
R
= 50 Ω
F
F
rr
S
SAMPLING
t
OSCILLOSCOPE
R = 50 Ω
V = V
I x R
F S
R
i
(1)
90%
V
R
MGA881
input signal
output signal
(1) IR = 3 mA.
Fig.8 Reverse recovery voltage test circuit and waveforms.
2003 Mar 20
7
NXP Semiconductors
Product data sheet
General purpose diodes
BAS19; BAS20; BAS21
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
SOT23
D
B
E
A
X
H
v
M
A
E
3
Q
A
A
1
c
1
2
e
b
w M
B
1
L
p
p
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
1
UNIT
b
c
D
E
e
e
H
L
Q
v
w
A
p
p
1
E
max.
1.1
0.9
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
2.5
2.1
0.45
0.15
0.55
0.45
mm
0.1
1.9
0.95
0.2
0.1
REFERENCES
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
JEDEC
EIAJ
97-02-28
99-09-13
SOT23
TO-236AB
2003 Mar 20
8
NXP Semiconductors
Product data sheet
General purpose diodes
BAS19; BAS20; BAS21
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Product data sheet
Qualification
Production
This document contains data from the preliminary specification.
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DISCLAIMERS
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
General ⎯ Information in this document is believed to be
accurate and reliable. However, NXP Semiconductors
does not give any representations or warranties,
expressed or implied, as to the accuracy or completeness
of such information and shall have no liability for the
consequences of use of such information.
Terms and conditions of sale ⎯ NXP Semiconductors
products are sold subject to the general terms and
conditions of commercial sale, as published at
http://www.nxp.com/profile/terms, including those
pertaining to warranty, intellectual property rights
infringement and limitation of liability, unless explicitly
otherwise agreed to in writing by NXP Semiconductors. In
case of any inconsistency or conflict between information
in this document and such terms and conditions, the latter
will prevail.
Right to make changes ⎯ NXP Semiconductors
reserves the right to make changes to information
published in this document, including without limitation
specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.
Suitability for use ⎯ NXP Semiconductors products are
not designed, authorized or warranted to be suitable for
use in medical, military, aircraft, space or life support
equipment, nor in applications where failure or malfunction
of an NXP Semiconductors product can reasonably be
expected to result in personal injury, death or severe
property or environmental damage. NXP Semiconductors
accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at
the customer’s own risk.
No offer to sell or license ⎯ Nothing in this document
may be interpreted or construed as an offer to sell products
that is open for acceptance or the grant, conveyance or
implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Export control ⎯ This document as well as the item(s)
described herein may be subject to export control
regulations. Export might require a prior authorization from
national authorities.
Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
2003 Mar 20
9
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were
made to the content, except for the legal definitions and disclaimers.
Contact information
For additional information please visit: http://www.nxp.com
For sales offices addresses send e-mail to: salesaddresses@nxp.com
© NXP B.V. 2009
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
613514/04/pp10
Date of release: 2003 Mar 20
Document order number: 9397 750 10961
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