BAS21VD/A2,135 [NXP]
ARRAY OF INDEPENDENT DIODES,SC-74;型号: | BAS21VD/A2,135 |
厂家: | NXP |
描述: | ARRAY OF INDEPENDENT DIODES,SC-74 测试 |
文件: | 总12页 (文件大小:130K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
BAS21VD
T457
SO
High-voltage switching diodes
Rev. 2 — 29 June 2011
Product data sheet
1. Product profile
1.1 General description
Triple high-voltage switching diodes, encapsulated in a SOT457 (SC-74) small
Surface-Mounted Device (SMD) plastic package.
1.2 Features and benefits
High switching speed: trr 50 ns
Reverse voltage: VR 200 V
Low capacitance: Cd 5 pF
AEC-Q101 qualified
Repetitive peak reverse voltage:
VRRM 250 V
Repetitive peak forward current:
IFRM 1 A
Small SMD plastic package
1.3 Applications
High-voltage switching in surface-mounted circuits
Automotive
Communication
1.4 Quick reference data
Table 1.
Quick reference data
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Per diode
[1][2]
[1]
IF
forward current
-
-
-
-
-
200
100
200
50
mA
nA
V
IR
VR
trr
reverse current
VR = 200 V
25
-
reverse voltage
reverse recovery time
[3]
16
ns
[1] Pulse test: tp 300 s; 0.02.
[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[3] When switched from IF = 30 mA to IR = 30 mA; RL = 100 ; measured at IR = 3 mA.
BAS21VD
NXP Semiconductors
High-voltage switching diodes
2. Pinning information
Table 2.
Pinning
Pin
1
Description
Simplified outline
Graphic symbol
cathode (diode 1)
cathode (diode 2)
cathode (diode 3)
anode (diode 3)
anode (diode 2)
anode (diode 1)
6
5
4
6
1
5
2
4
2
3
4
1
2
3
5
3
6
006aab241
3. Ordering information
Table 3.
Ordering information
Type number
Package
Name
Description
Version
BAS21VD
SC-74
plastic surface-mounted package; 6 leads
SOT457
4. Marking
Table 4.
Marking codes
Type number
Marking code
BAS21VD
B5
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Per diode
VRRM
Parameter
Conditions
Min
Max
Unit
repetitive peak
reverse voltage
-
250
V
VR
IF
reverse voltage
forward current
-
-
-
200
200
1
V
[1][3]
[2]
mA
A
IFRM
repetitive peak
forward current
tp 1 ms;
25 %
IFSM
non-repetitive peak
forward current
square wave
tp = 10 s
-
-
-
16
8
A
A
A
tp = 100 s
tp = 10 ms
2
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© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 2 — 29 June 2011
2 of 12
BAS21VD
NXP Semiconductors
High-voltage switching diodes
Table 5.
Limiting values …continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
Per device; one diode loaded
[3]
[4]
Ptot
total power dissipation
Tamb 25 C
-
250
mW
mW
C
-
295
Tj
junction temperature
ambient temperature
storage temperature
-
150
Tamb
Tstg
65
65
+150
+150
C
C
[1] Pulse test: tp 300 s; 0.02.
[2] Tj = 25 C prior to surge.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[4] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.
6. Thermal characteristics
Table 6.
Symbol
Per device; one diode loaded
Thermal characteristics
Parameter
Conditions
Min
Typ
Max Unit
[1]
[2]
[3]
Rth(j-a)
thermal resistance from
junction to ambient
in free air
-
-
-
-
-
-
500
425
140
K/W
K/W
K/W
Rth(j-sp)
thermal resistance from
junction to solder point
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.
[3] Soldering point of cathode tab.
7. Characteristics
Table 7.
Characteristics
Tamb = 25 C unless otherwise specified.
Symbol Parameter
Per diode
Conditions
Min
Typ
Max Unit
VF
forward voltage
IF = 100 mA
-
-
-
-
-
-
-
1
V
IF = 200 mA
-
1.25 mV
[1]
[2]
IR
reverse current
VR = 200 V
25
-
100
100
5
nA
A
pF
ns
VR = 200 V; Tj = 150 C
f = 1 MHz; VR = 0 V
Cd
trr
diode capacitance
0.6
16
reverse recovery time
50
[1] Pulse test: tp 300 s; 0.02.
[2] When switched from IF = 30 mA to IR = 30 mA; RL = 100 ; measured at IR = 3 mA.
BAS21VD
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© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 2 — 29 June 2011
3 of 12
BAS21VD
NXP Semiconductors
High-voltage switching diodes
mbg384
mle165
2
600
10
I
F
I
FSM
(A)
(mA)
(1)
(2)
(3)
400
10
200
1
0
2
3
4
5
0
1
2
1
10
10
10
10
10
V
(V)
F
t
(μA)
p
(1) Tj = 150 C; typical values
(2) Tj = 25 C; typical values
(3) Tj = 25 C; maximum values
Based on square wave currents.
Tj = 25 C; prior to surge
Fig 1. Forward current as a function of forward
voltage
Fig 2. Non-repetitive peak forward current as a
function of pulse duration; maximum values
mbg381
2
10
I
R
(μA)
10
(1)
(2)
1
−1
10
−2
10
0
100
200
T (°C)
j
(1) VR = VRmax; maximum values
(2) VR = VRmax; typical values
Fig 3. Reverse current as a function of junction temperature
BAS21VD
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© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 2 — 29 June 2011
4 of 12
BAS21VD
NXP Semiconductors
High-voltage switching diodes
mle166
mle167
0.6
300
C
(pF)
d
V
(V)
R
0.5
200
0.4
0.3
0.2
100
0
0
10
20
30
40
0
50
100
150
200
(°C)
T
V
R
(V)
amb
f = 1 MHz; Tj = 25 C
FR4 PCB, standard footprint
Fig 4. Diode capacitance as a function of reverse
voltage; typical values
Fig 5. Reverse voltage as a function of ambient
temperature; derating curve
mbg442
300
I
F
(mA)
200
100
0
0
100
200
T
amb
(˚C)
FR4 PCB, standard footprint
Fig 6. Forward current as a function of ambient temperature; derating curve
BAS21VD
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© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 2 — 29 June 2011
5 of 12
BAS21VD
NXP Semiconductors
High-voltage switching diodes
8. Test information
t
t
p
r
t
D.U.T.
10 %
I
+ I
F
F
t
rr
R
S
= 50 Ω
SAMPLING
OSCILLOSCOPE
t
R
i
= 50 Ω
V = V + I × R
S
R
F
(1)
90 %
V
R
mga881
input signal
output signal
(1) IR = 3 mA
Fig 7. Reverse recovery time test circuit and waveforms
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
9. Package outline
3.1
2.7
1.1
0.9
6
5
4
0.6
0.2
3.0 1.7
2.5 1.3
pin 1 index
1
2
3
0.26
0.10
0.40
0.25
0.95
1.9
Dimensions in mm
04-11-08
Fig 8. Package outline SOT457 (SC-74)
BAS21VD
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© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 2 — 29 June 2011
6 of 12
BAS21VD
NXP Semiconductors
High-voltage switching diodes
10. Packing information
Table 8.
Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.[1]
Type number
Package
Description
Packing quantity
3000
-115
-125
10000
-135
[2]
[3]
BAS21VD
SOT457
4 mm pitch, 8 mm tape and reel; T1
4 mm pitch, 8 mm tape and reel; T2
-165
[1] For further information and the availability of packing methods, see Section 14.
[2] T1: normal taping
[3] T2: reverse taping
BAS21VD
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© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 2 — 29 June 2011
7 of 12
BAS21VD
NXP Semiconductors
High-voltage switching diodes
11. Soldering
3.45
1.95
0.55
(6×)
solder lands
solder resist
0.45
(6×)
0.95
0.95
3.3 2.825
solder paste
occupied area
0.7
Dimensions in mm
(6×)
0.8
(6×)
2.4
sot457_fr
Fig 9. Reflow soldering footprint SOT457 (SC-74)
5.3
1.5
(4×)
solder lands
1.475
1.475
solder resist
occupied area
0.45
(2×)
5.05
Dimensions in mm
preferred transport
direction during soldering
1.45
(6×)
2.85
sot457_fw
Fig 10. Wave soldering footprint SOT457 (SC-74)
BAS21VD
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© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 2 — 29 June 2011
8 of 12
BAS21VD
NXP Semiconductors
High-voltage switching diodes
12. Revision history
Table 9.
Revision history
Document ID
BAS21VD v.2
Modifications:
Release date
Data sheet status
Change notice
Supersedes
20110629
Product data sheet
-
BAS21VD v.1
• The format of this document has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
• Legal texts have been adapted to the new company name where appropriate.
• Section 1.4 “Quick reference data”: added.
• Table 5: added Tamb; updated Ptot.
• Table 6: updated.
• Figure 1: updated.
• Section 8.1 “Quality information”: added.
• Figure 8: replaced by minimized package outline drawing.
• Section 10 “Packing information”: added.
• Section 11 “Soldering”: added.
• Section 13 “Legal information”: updated.
BAS21VD v.1
20030703
Product data sheet
-
-
BAS21VD
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 2 — 29 June 2011
9 of 12
BAS21VD
NXP Semiconductors
High-voltage switching diodes
13. Legal information
13.1 Data sheet status
Document status[1][2]
Product status[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
malfunction of an NXP Semiconductors product can reasonably be expected
13.2 Definitions
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Customers are responsible for the design and operation of their applications
and products using NXP Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the customer’s applications and
products planned, as well as for the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
13.3 Disclaimers
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from national authorities.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
BAS21VD
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© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 2 — 29 June 2011
10 of 12
BAS21VD
NXP Semiconductors
High-voltage switching diodes
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
13.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
14. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
BAS21VD
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 2 — 29 June 2011
11 of 12
BAS21VD
NXP Semiconductors
High-voltage switching diodes
15. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1
1.2
1.3
1.4
General description . . . . . . . . . . . . . . . . . . . . . 1
Features and benefits. . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data . . . . . . . . . . . . . . . . . . . . 1
2
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
Ordering information. . . . . . . . . . . . . . . . . . . . . 2
Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics . . . . . . . . . . . . . . . . . . 3
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3
Test information. . . . . . . . . . . . . . . . . . . . . . . . . 6
Quality information . . . . . . . . . . . . . . . . . . . . . . 6
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 6
Packing information . . . . . . . . . . . . . . . . . . . . . 7
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Revision history. . . . . . . . . . . . . . . . . . . . . . . . . 9
3
4
5
6
7
8
8.1
9
10
11
12
13
Legal information. . . . . . . . . . . . . . . . . . . . . . . 10
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 10
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 11
13.1
13.2
13.3
13.4
14
15
Contact information. . . . . . . . . . . . . . . . . . . . . 11
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2011.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 29 June 2011
Document identifier: BAS21VD
相关型号:
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