BAS28 [NXP]
High-speed double diode; 高速双二极管
| 型号： | BAS28 |
| 厂家： | 
NXP |
| 描述： | High-speed double diode |
| 文件： | 总7页 (文件大小：40K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
BAS28
High-speed double diode
1996 Sep 10
Product specification
Supersedes data of April 1996
Philips Semiconductors
Product specification
High-speed double diode
BAS28
FEATURES
DESCRIPTION
PINNING
PIN
• Small plastic SMD package
The BAS28 consists of two
DESCRIPTION
high-speed switching diodes,
fabricated in planar technology, and
encapsulated in the small plastic
SMD SOT143 package. The diodes
are not connected.
• High switching speed: max. 4 ns
1
2
3
4
cathode (k1)
cathode (k2)
anode (a2)
anode (a1)
• Continuous reverse voltage:
max. 75 V
• Repetitive peak reverse voltage:
max. 85 V
• Repetitive peak forward current:
max. 500 mA .
handbook, hge
4
3
2
4
3
2
APPLICATIONS
• High-speed switching in e.g.
surface mounted circuits.
1
1
MAM059
Top view
Marking code: JTp.
Fig.1 Simplified outline (SOT143) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VRRM
VR
repetitive peak reverse voltage
continuous reverse voltage
continuous forward current
repetitive peak forward current
−
−
−
−
85
75
V
V
IF
see Fig.2; note 1
215
500
mA
mA
IFRM
IFSM
non-repetitive peak forward current square wave; Tj = 25 °C prior to
surge; see Fig.4
t = 1 µs
t = 1 ms
t = 1 s
−
−
4
1
A
A
−
0.5
A
Ptot
Tstg
Tj
total power dissipation
storage temperature
junction temperature
Tamb = 25 °C; note 1
−
250
+150
150
mW
°C
°C
−65
−
Note
1. Device mounted on an FR4 printed-circuit board.
1996 Sep 10
2
Philips Semiconductors
Product specification
High-speed double diode
BAS28
ELECTRICAL CHARACTERISTICS
Tj = 25 °C; unless otherwise specified.
SYMBOL
PARAMETER
forward voltage
CONDITIONS
MIN.
MAX.
UNIT
VF
see Fig.3
IF = 1 mA
−
−
−
−
715
855
1
mV
IF = 10 mA
mV
V
IF = 50 mA
IF = 150 mA
1.25
V
IR
reverse current
see Fig.5
VR = 25 V
−
−
−
−
−
−
30
1
nA
µA
µA
µA
pF
ns
VR = 75 V
VR = 25 V; Tj = 150 °C
VR = 75 V; Tj = 150 °C
f = 1 MHz; VR = 0; see Fig.6
30
50
1.5
4
Cd
trr
diode capacitance
reverse recovery time
when switched from IF = 10 mA to
IR = 10 mA; RL = 100 Ω;
measured at IR = 1 mA; see Fig.7
Vfr
forward recovery voltage
when switched from IF = 10 mA;
tr = 20 ns; see Fig.8
−
1.75
V
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
thermal resistance from junction to tie-point
thermal resistance from junction to ambient note 1
CONDITIONS
VALUE
360
UNIT
Rth j-tp
Rth j-a
K/W
K/W
500
Note
1. Device mounted on an FR4 printed-circuit board.
1996 Sep 10
3
Philips Semiconductors
Product specification
High-speed double diode
BAS28
GRAPHICAL DATA
MSA562 -1
MBG382
300
250
handbook, halfpage
I
F
I
(mA)
F
(mA)
200
(1)
(2)
(3)
200
150
100
100
50
0
0
0
1
2
0
50
100
150
T
200
( C)
V (V)
F
o
amb
(1) Tj = 150 °C; typical values.
(2) Tj = 25 °C; typical values.
Device mounted on an FR4 printed-circuit board.
(3) Tj = 25 °C; maximum values.
Fig.2 Maximum permissible continuous forward
current as a function of ambient temperature.
Fig.3 Forward current as a function
of forward voltage.
MBG704
2
10
I
FSM
(A)
10
1
−1
10
2
3
4
1
10
10
10
10
t
(µs)
p
Based on square wave currents.
Tj = 25 °C prior to surge.
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
1996 Sep 10
4
Philips Semiconductors
Product specification
High-speed double diode
BAS28
MGA884
MBG446
5
0.8
10
handbook, halfpage
C
I
d
R
(pF)
0.6
(nA)
V
= 75 V
R
4
3
10
max
75 V
25 V
10
0.4
0.2
2
10
typ
typ
0
0
10
0
100
4
8
12
16
200
o
T
(
C)
V
(V)
R
j
f = 1 MHz; Tj = 25 °C.
Fig.5 Reverse current as a function of
junction temperature.
Fig.6 Diode capacitance as a function of reverse
voltage; typical values.
1996 Sep 10
5
Philips Semiconductors
Product specification
High-speed double diode
BAS28
t
t
p
r
t
D.U.T.
I
10%
I
t
R
= 50 Ω
F
F
rr
S
SAMPLING
t
OSCILLOSCOPE
R = 50 Ω
V = V
I x R
F S
R
i
(1)
90%
V
R
MGA881
input signal
output signal
(1) IR = 1 mA.
Fig.7 Reverse recovery voltage test circuit and waveforms.
I
1 kΩ
450 Ω
I
V
90%
R
= 50 Ω
S
OSCILLOSCOPE
V
fr
D.U.T.
R = 50 Ω
i
10%
MGA882
t
t
t
t
p
r
input
signal
output
signal
Fig.8 Forward recovery voltage test circuit and waveforms.
6
1996 Sep 10
Philips Semiconductors
Product specification
High-speed double diode
BAS28
PACKAGE OUTLINE
3.0
2.8
B
0.150
0.090
1.9
A
B
M
0.2
0.75
0.60
A
4
3
0.1
max
o
10
max
2.5
max
1.4
1.2
o
10
max
1
2
1.1
max
o
0.1 M
A B
MBC845
30
max
0
0.1
0
0.1
0.88
0.48
1.7
TOP VIEW
Dimensions in mm.
Fig.9 SOT143.
DEFINITIONS
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Preliminary specification
Product specification
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1996 Sep 10
7
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