BAS40-04212 [NXP]

0.12A, 2 ELEMENT, SILICON, SIGNAL DIODE;
BAS40-04212
型号: BAS40-04212
厂家: NXP    NXP
描述:

0.12A, 2 ELEMENT, SILICON, SIGNAL DIODE

文件: 总3页 (文件大小:89K)
中文:  中文翻译
下载:  下载PDF数据表文档文件

相关型号:

BAS40-04B5000

Rectifier Diode, Schottky, 2 Element, 0.12A, 40V V(RRM), Silicon, SOT-23, 3-PIN
INFINEON

BAS40-04B5003

0.12 A, 40 V, 2 ELEMENT, SILICON, SIGNAL DIODE, SOT-23, 3-PIN
ROCHESTER

BAS40-04E3

Rectifier Diode, Schottky, 2 Element, 0.2A, 40V V(RRM), Silicon, PLASTIC PACKAGE-3
MICROSEMI

BAS40-04E6327

0.12 A, 40 V, 2 ELEMENT, SILICON, SIGNAL DIODE, SOT-23, 3 PIN
ROCHESTER

BAS40-04E6327XT

0.12A, 40V, 2 ELEMENT, SILICON, SIGNAL DIODE, GREEN PACKAGE-3
INFINEON

BAS40-04E6433

0.12 A, 2 ELEMENT, SILICON, SIGNAL DIODE, SOT-23, 3 PIN
ROCHESTER

BAS40-04E6433XT

Rectifier Diode, Schottky, 2 Element, 0.12A, Silicon, SOT-23, 3 PIN
INFINEON

BAS40-04GS08

Rectifier Diode, PLASTIC, SOT-23, 3 PIN
VISHAY

BAS40-04GS18

Rectifier Diode, PLASTIC, SOT-23, 3 PIN
VISHAY

BAS40-04HY

BAS40-04HY适用于小电流整流用途,是低VF的肖特基势垒二极管。采用非常普遍的SOT-23封装,容易进行设计。
ROHM

BAS40-04HYFH

BAS40-04HYFH适用于小电流整流用途,是低VF的肖特基势垒二极管。采用非常普遍的SOT-23封装,容易进行设计。是符合AEC-Q101标准的高可靠性产品。
ROHM

BAS40-04LT1

Dual Series Schottky Barrier Diode
LRC