BAS716_12 [NXP]

Low-leakage diode; 低漏电二极管


型号：	BAS716_12
厂家：	NXP
描述：	Low-leakage diode 低漏电二极管二极管
文件：	总9页 (文件大小：76K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

DISCRETE SEMICONDUCTORS

DATA SHEET

M3D319

BAS716

Low-leakage diode

Product data sheet

2003 Nov 07

NXP Semiconductors

Product data sheet

Low-leakage diode

BAS716

FEATURES

PINNING

• Plastic SMD package

DESCRIPTION

• Low leakage current: typ. 0.2 nA

• Switching time: typ. 0.6 µs

cathode

anode

• Continuous reverse voltage: max. 75 V

• Repetitive peak reverse voltage: max. 85 V

• Repetitive peak forward current: max. 500 mA.

handbook, halfpage

APPLICATION

• Low leakage current applications in surface mounted

MAM408

Top view

circuits.

Marking code: S1.

The marking bar indicates the cathode.

DESCRIPTION

Epitaxial medium-speed switching diode with a low

leakage current in an ultra small SOD523 (SC-79) SMD

plastic package.

Fig.1 Simplified outline (SOD523; SC-79) and

symbol.

ORDERING INFORMATION

PACKAGE

TYPE NUMBER

NAME

DESCRIPTION

plastic surface mounted package; 2 leads

VERSION

BAS716

−

SOD523

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

SYMBOL

V_RRM

V_R

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

repetitive peak reverse voltage

continuous reverse voltage

continuous forward current

repetitive peak forward current

−

I_F

see Fig.2; note 1

200

500

I_FRM

I_FSM

non-repetitive peak forward current square wave; T_j= 25 °C prior to surge;

see Fig.4

t_p= 1 µs

t_p= 1 ms

t_p= 1 s

−

0.5

250

+150

150

P_tot

T_stg

T_j

total power dissipation

storage temperature

junction temperature

T_amb= 25 °C; note 1

°C

−65

−

Note

1. Device mounted on a FR4 printed-circuit board.

2003 Nov 07

NXP Semiconductors

Product data sheet

Low-leakage diode

BAS716

ELECTRICAL CHARACTERISTICS

T_j= 25 °C unless otherwise specified.

SYMBOL

PARAMETER

forward voltage

CONDITIONS

TYP.

0.77

MAX.

0.9

UNIT

V_F

I_F= 1 mA

I_F= 10 mA

I_F= 50 mA

I_F= 150 mA

V_R= 75 V

0.85

0.92

1.02

0.2

1.1

1.25

I_R

reverse current

µs

V_R= 75 V; T_j= 150 °C

V_R= 100 V

−

0.3

C_d

t_rr

diode capacitance

V_R= 0 V; f = 1 MHz; see Fig.6

−

reverse recovery time

when switched from I_F= 10 mA to

I_R= 10 mA; R_L= 100 Ω; measured at

I_R= 1 mA

0.6

THERMAL CHARACTERISTICS

SYMBOL

R_{th j-a}

PARAMETER

thermal resistance from junction to ambient

CONDITIONS

VALUE

UNIT

K/W

note 1

450

120

R_{th j-s}

thermal resistance from junction to soldering point note 2

Notes

1. Device mounted on a FR4 printed-circuit board. Refer to SOD523 (SC-79) standard mounting conditions.

2. Soldering point of the cathode tab.

2003 Nov 07

NXP Semiconductors

Product data sheet

Low-leakage diode

BAS716

GRAPHICAL DATA

MHC323

MLB752 - 1

300

handbook, halfpage

(mA)

200

(1)

(2)

(3)

100

0.4

0.8

1.2

1.6

100

200

(V)

(°C)

amb

(1) T_j= 150 °C; typical values.

(2) T_j= 25 °C; typical values.

Device mounted on a FR4 printed-circuit board.

(3) T_j= 25 °C; maximum values.

Fig.2 Maximum permissible continuous forward

current as a function of ambient

temperature.

Fig.3 Forward current as a function of forward

voltage.

MBG704

handbook, full pagewidth

FSM

(A)

−1

(µs)

Based on square wave currents; T_j= 25 °C prior to surge.

Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.

2003 Nov 07

NXP Semiconductors

Product data sheet

Low-leakage diode

BAS716

MDB827

MDB826

2.0

handbook, halfpage

(pF)

(nA)

(1)

1.5

1.0

0.5

(2)

−1

100

150

200

T (°C)

(V)

V_R= 75 V.

(1) Maximum values.

(2) Typical values.

f = 1 MHz; T_j= 25 °C.

Fig.5 Reverse current as a function of junction

temperature.

Fig.6 Diode capacitance as a function of reverse

voltage; typical values.

handbook, full pagewidth

D.U.T.

10%

= 50 Ω

SAMPLING

OSCILLOSCOPE

R = 50 Ω

V = V

I x R

F S

(1)

90%

MGA881

input signal

output signal

(1) I_R= 1 mA.

Input signal: reverse pulse rise time t_r= 0.6 ns; reverse voltage pulse duration t_p= 100 ns; duty factor δ = 0.05;

Oscilloscope: rise time t_r= 0.35 ns.

Fig.7 Reverse recovery voltage test circuit and waveforms.

2003 Nov 07

NXP Semiconductors

Product data sheet

Low-leakage diode

BAS716

PACKAGE OUTLINE

Plastic surface mounted package; 2 leads

SOD523

0.5

1 mm

scale

DIMENSIONS (mm are the original dimensions)

UNIT

0.34

0.26

0.17

0.11

0.65

0.58

1.25

1.15

0.85

0.75

1.65

1.55

0.1

(1)

Note

1. The marking bar indicates the cathode.

REFERENCES

JEDEC

EUROPEAN

PROJECTION

OUTLINE

VERSION

ISSUE DATE

IEC

JEITA

98-11-25

02-12-13

SOD523

SC-79

2003 Nov 07

NXP Semiconductors

Product data sheet

Low-leakage diode

BAS716

DATA SHEET STATUS

DOCUMENT

STATUS⁽¹⁾

PRODUCT

STATUS⁽²⁾

DEFINITION

Objective data sheet

Development

This document contains data from the objective specification for product

development.

Preliminary data sheet

Product data sheet

Qualification

Production

This document contains data from the preliminary specification.

This document contains the product specification.

Notes

1. Please consult the most recently issued document before initiating or completing a design.

2. The product status of device(s) described in this document may have changed since this document was published

and may differ in case of multiple devices. The latest product status information is available on the Internet at

URL http://www.nxp.com.

DISCLAIMERS

Limiting values ⎯ Stress above one or more limiting

values (as defined in the Absolute Maximum Ratings

System of IEC 60134) may cause permanent damage to

the device. Limiting values are stress ratings only and

operation of the device at these or any other conditions

above those given in the Characteristics sections of this

document is not implied. Exposure to limiting values for

extended periods may affect device reliability.

General ⎯ Information in this document is believed to be

accurate and reliable. However, NXP Semiconductors

does not give any representations or warranties,

expressed or implied, as to the accuracy or completeness

of such information and shall have no liability for the

consequences of use of such information.

Right to make changes ⎯ NXP Semiconductors

reserves the right to make changes to information

published in this document, including without limitation

specifications and product descriptions, at any time and

without notice. This document supersedes and replaces all

information supplied prior to the publication hereof.

Terms and conditions of sale ⎯ NXP Semiconductors

products are sold subject to the general terms and

conditions of commercial sale, as published at

http://www.nxp.com/profile/terms, including those

pertaining to warranty, intellectual property rights

infringement and limitation of liability, unless explicitly

otherwise agreed to in writing by NXP Semiconductors. In

case of any inconsistency or conflict between information

in this document and such terms and conditions, the latter

will prevail.

Suitability for use ⎯ NXP Semiconductors products are

not designed, authorized or warranted to be suitable for

use in medical, military, aircraft, space or life support

equipment, nor in applications where failure or malfunction

of an NXP Semiconductors product can reasonably be

expected to result in personal injury, death or severe

property or environmental damage. NXP Semiconductors

accepts no liability for inclusion and/or use of NXP

Semiconductors products in such equipment or

applications and therefore such inclusion and/or use is at

the customer’s own risk.

No offer to sell or license ⎯ Nothing in this document

may be interpreted or construed as an offer to sell products

that is open for acceptance or the grant, conveyance or

implication of any license under any copyrights, patents or

other industrial or intellectual property rights.

Export control ⎯ This document as well as the item(s)

described herein may be subject to export control

regulations. Export might require a prior authorization from

national authorities.

Applications ⎯ Applications that are described herein for

any of these products are for illustrative purposes only.

NXP Semiconductors makes no representation or

warranty that such applications will be suitable for the

specified use without further testing or modification.

Quick reference data ⎯ The Quick reference data is an

extract of the product data given in the Limiting values and

Characteristics sections of this document, and as such is

not complete, exhaustive or legally binding.

2003 Nov 07

NXP Semiconductors

Customer notification

This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were

made to the content, except for the legal definitions and disclaimers.

Contact information

For additional information please visit: http://www.nxp.com

For sales offices addresses send e-mail to: salesaddresses@nxp.com

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed

without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license

under patent- or other industrial or intellectual property rights.

Printed in The Netherlands

R76/01/pp8

Date of release: 2003 Nov 07

Document order number: 9397 750 11999

Mouser Electronics

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