BAT120STRL [NXP]

DIODE 1 A, 2 ELEMENT, SILICON, SIGNAL DIODE, PLASTIC, SC-73, 4 PIN, Signal Diode;


型号：	BAT120STRL
厂家：	NXP
描述：	DIODE 1 A, 2 ELEMENT, SILICON, SIGNAL DIODE, PLASTIC, SC-73, 4 PIN, Signal Diode 光电二极管
文件：	总8页 (文件大小：54K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

DISCRETE SEMICONDUCTORS

DATA SHEET

halfpage

M3D087

BAT120

Schottky barrier double diodes

Product speciﬁcation

2001 Aug 27

Supersedes data of 1998 Oct 30

Philips Semiconductors

Product speciﬁcation

Schottky barrier double diodes

BAT120

FEATURES

PINNING

• Low switching losses

BAT120

• Capability of absorbing very high

a₁

page

surge current

k₁

n.c.

k₂

• Fast recovery time

• Guard ring protected

• Plastic SMD package.

n.c.

a₂

n.c.

k₂

MGL171

2 n.c.

a₁, a₂

k₁, k₂

k₁, a₂

Fig.2 BAT120A diode

configuration (symbol).

APPLICATIONS

• Low power switched-mode power

supplies

age

• Rectification

• Polarity protection.

page

DESCRIPTION

Planar Schottky barrier double diodes

encapsulated in a SOT223 plastic

SMD package

MGL172

2 n.c.

Fig.3 BAT120C diode

configuration (symbol).

MSB002 - 1

Top view

MARKING

TYPE NUMBER

CODE

page

BAT120A

BAT120C

BAT120S

AT120A

AT120C

AT120S

Fig.1 Simplified outline

(SOT223) and pin

configuration.

MGL173

2 n.c.

Fig.4 BAT120S diode

configuration (symbol).

2001 Aug 27

Philips Semiconductors

Product speciﬁcation

Schottky barrier double diodes

BAT120

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

SYMBOL

Per diode

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

V_R

I_F

continuous reverse voltage

continuous forward current

−

I_FSM

non-repetitive peak forward current

t_p< 10 ms; half sinewave;

JEDEC method

I_RSM

T_stg

T_j

non-repetitive peak reverse current

storage temperature

t_p= 100 µs

−

0.5

−65

−

+150

125

°C

junction temperature

T_amb

operating ambient temperature

−65

+125

ELECTRICAL CHARACTERISTICS

_amb= 25 °C unless otherwise speciﬁed.

SYMBOL PARAMETER

CONDITIONS

TYP.

MAX.

UNIT

Per diode

V_F

forward voltage

reverse current

see Fig.5

I_F= 100 mA

260

400

−

300

450

500

µA

I_F= 1 A

I_R

V_R= 20 V; note 1; see Fig.6

V_R= 25 V; note 1; see Fig.6

V_R= 20 V; T_j= 100 °C; note 1

f = 1 MHz; V_R= 4 V; see Fig.7

−

C_d

diode capacitance

100

Note

1. Pulse test: t_p= 300 µs; δ = 0.02.

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

thermal resistance from junction to ambient note 1

CONDITIONS

VALUE

100

UNIT

R_{th j-a}

K/W

Note

1. Refer to SOT223 standard mounting conditions.

2001 Aug 27

Philips Semiconductors

Product speciﬁcation

Schottky barrier double diodes

BAT120

GRAPHICAL DATA

MBK572

MHB970

handbook, halfpage

(1)

(µA)

(mA)

(2)

(3)

(1)

(2)

(3)

(4)

0.2

0.4

0.6

0.8

1.0

(V)

(1) T_amb= 125 °C.

(2) T_amb= 100 °C.

(3) T_amb= 75 °C.

(4) T_amb= 25 °C.

(1) T_amb= 125 °C.

(2) T_amb= 100 °C.

(3) T_amb= 75 °C.

(4) T_amb= 25 °C.

Fig.5 Forward current as a function of forward

voltage; typical values.

Fig.6 Reverse current as a function of reverse

voltage; typical values.

MBK571

handbook, halfpage

(pF)

(V)

f = 1 MHz; T_amb= 25 °C.

Fig.7 Diode capacitance as a function of reverse

voltage; typical values.

2001 Aug 27

Philips Semiconductors

Product speciﬁcation

Schottky barrier double diodes

BAT120

PACKAGE OUTLINE

Plastic surface mounted package; collector pad for good heat transfer; 4 leads

SOT223

detail X

4 mm

scale

DIMENSIONS (mm are the original dimensions)

UNIT

1.8

1.5

0.10 0.80

0.01 0.60

3.1

2.9

0.32

0.22

6.7

6.3

3.7

3.3

7.3

6.7

1.1

0.7

0.95

0.85

4.6

2.3

0.2

0.1

REFERENCES

JEDEC

EUROPEAN

PROJECTION

OUTLINE

VERSION

ISSUE DATE

IEC

EIAJ

97-02-28

99-09-13

SOT223

SC-73

2001 Aug 27

Philips Semiconductors

Product speciﬁcation

Schottky barrier double diodes

BAT120

DATA SHEET STATUS

PRODUCT

DATA SHEET STATUS⁽¹⁾

STATUS⁽²⁾

DEFINITIONS

Objective data

Development This data sheet contains data from the objective specification for product

development. Philips Semiconductors reserves the right to change the

speciﬁcation in any manner without notice.

Preliminary data

Qualiﬁcation

This data sheet contains data from the preliminary specification.

Supplementary data will be published at a later date. Philips

Semiconductors reserves the right to change the speciﬁcation without

notice, in order to improve the design and supply the best possible

product.

Product data

Production

This data sheet contains data from the product specification. Philips

Semiconductors reserves the right to make changes at any time in order

to improve the design, manufacturing and supply. Changes will be

communicated according to the Customer Product/Process Change

Notiﬁcation (CPCN) procedure SNW-SQ-650A.

Notes

1. Please consult the most recently issued data sheet before initiating or completing a design.

2. The product status of the device(s) described in this data sheet may have changed since this data sheet was

published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.

DEFINITIONS

DISCLAIMERS

Short-form specification

The data in a short-form

Life support applications

These products are not

specification is extracted from a full data sheet with the

same type number and title. For detailed information see

the relevant data sheet or data handbook.

designed for use in life support appliances, devices, or

systems where malfunction of these products can

reasonably be expected to result in personal injury. Philips

Semiconductors customers using or selling these products

for use in such applications do so at their own risk and

agree to fully indemnify Philips Semiconductors for any

damages resulting from such application.

Limiting values definition Limiting values given are in

accordance with the Absolute Maximum Rating System

(IEC 60134). Stress above one or more of the limiting

values may cause permanent damage to the device.

These are stress ratings only and operation of the device

at these or at any other conditions above those given in the

Characteristics sections of the specification is not implied.

Exposure to limiting values for extended periods may

affect device reliability.

Right to make changes

Philips Semiconductors

reserves the right to make changes, without notice, in the

products, including circuits, standard cells, and/or

software, described or contained herein in order to

improve design and/or performance. Philips

Semiconductors assumes no responsibility or liability for

the use of any of these products, conveys no licence or title

under any patent, copyright, or mask work right to these

products, and makes no representations or warranties that

these products are free from patent, copyright, or mask

work right infringement, unless otherwise specified.

Application information

Applications that are

described herein for any of these products are for

illustrative purposes only. Philips Semiconductors make

no representation or warranty that such applications will be

suitable for the specified use without further testing or

modification.

2001 Aug 27

Philips Semiconductors

Product speciﬁcation

Schottky barrier double diodes

BAT120

NOTES

2001 Aug 27

Philips Semiconductors – a worldwide company

Contact information

For additional information please visit http://www.semiconductors.philips.com.

Fax: +31 40 27 24825

For sales ofﬁces addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.

SCA73

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed

without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license

under patent- or other industrial or intellectual property rights.

Printed in The Netherlands

613510/03/pp8

Date of release: 2001 Aug 27

Document order number: 9397 750 08658

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