BAT160C-115 [NXP]

Schottky barrier double diodes; 肖特基势垒二极管双
BAT160C-115
型号: BAT160C-115
厂家: NXP    NXP
描述:

Schottky barrier double diodes
肖特基势垒二极管双

二极管
文件: 总7页 (文件大小:164K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
DISCRETE SEMICONDUCTORS  
DATA SHEET  
halfpage  
BAT160 series  
Schottky barrier double diodes  
Product data sheet  
1999 Sep 20  
Supersedes data of 1999 Mar 26  
NXP Semiconductors  
Product data sheet  
Schottky barrier double diodes  
BAT160 series  
FEATURES  
PINNING  
PIN  
Low switching losses  
BAT160  
C
4
Capability of absorbing very high  
A
S
surge current  
1
2
3
4
k1  
n.c.  
k2  
a1  
n.c.  
a2  
a1  
n.c.  
k2  
1
3
Fast recovery time  
Guard ring protected  
Plastic SMD package.  
MGL171  
2 n.c.  
a1, a2  
k1, k2  
k1, a2  
Fig.2 BAT160A diode  
configuration (symbol).  
APPLICATIONS  
Low power switched-mode power  
supplies  
age  
4
Rectification  
4
Polarity protection.  
1
3
DESCRIPTION  
Planar Schottky barrier double diodes  
encapsulated in a SOT223 plastic  
SMD package.  
MGL172  
2 n.c.  
Fig.3 BAT160C diode  
configuration (symbol).  
1
2
3
MSB002 - 1  
Top view  
MARKING  
MARKING  
TYPE NUMBER  
CODE  
4
BAT160A  
BAT160C  
BAT160S  
AT160A  
AT160C  
AT160S  
Fig.1 Simplified outline  
(SOT223) and pin  
configuration.  
1
3
MGL173  
2 n.c.  
Fig.4 BAT160S diode  
configuration (symbol).  
1999 Sep 20  
2
NXP Semiconductors  
Product data sheet  
Schottky barrier double diodes  
BAT160 series  
LIMITING VALUES  
In accordance with the Absolute Maximum Rating System (IEC 134).  
SYMBOL  
Per diode  
PARAMETER  
CONDITIONS  
MIN.  
MAX.  
UNIT  
VR  
IF  
continuous reverse voltage  
continuous forward current  
60  
V
1
A
A
IFSM  
non-repetitive peak forward current  
tp = 8.3 ms; half sinewave;  
JEDEC method  
10  
IRSM  
Tstg  
Tj  
non-repetitive peak reverse current  
storage temperature  
tp = 100 μs  
0.5  
A
65  
+150  
150  
°C  
°C  
junction temperature  
ELECTRICAL CHARACTERISTICS  
Tamb = 25 °C unless otherwise specified.  
SYMBOL  
PARAMETER  
CONDITIONS  
MAX.  
UNIT  
Per diode  
VF  
forward voltage  
reverse current  
see Fig.5  
IF = 100 mA  
IF = 1 A  
400  
650  
850  
350  
8
mV  
mV  
mV  
μA  
IF = 2 A  
IR  
VR = 60 V; note 1; see Fig.6  
VR = 60 V; Tj = 100 °C; note 1;  
mA  
see Fig.6  
Cd  
diode capacitance  
f = 1 MHz; VR = 4 V; see Fig 7  
60  
pF  
Note  
1. Pulse test: tp = 300 μs; δ = 0.02.  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
thermal resistance from junction to ambient note 1  
CONDITIONS  
VALUE  
100  
UNIT  
Rth j-a  
K/W  
Note  
1. Refer to SOT223 standard mounting conditions.  
1999 Sep 20  
3
NXP Semiconductors  
Product data sheet  
Schottky barrier double diodes  
BAT160 series  
GRAPHICAL DATA  
MCD784  
MCD768  
5
4
10  
10  
handbook, halfpage  
handbook, halfpage  
I
R
I
F
(μA)  
4
(mA)  
10  
3
10  
(1)  
(2)  
3
10  
(3)  
2
2
10  
10  
(2)  
10  
1
(1)  
(3) (4)  
(4)  
10  
1
1  
10  
0
0.2  
0.4  
0.6  
0.8  
0
20  
40  
60  
V
(V)  
V
(V)  
R
F
(1) Tamb = 125 °C.  
(2) Tamb = 100 °C.  
(3) Tamb = 75 °C.  
(4) Tamb = 25 °C.  
(1) Tamb = 125 °C.  
(2) Tamb = 100 °C.  
(3) Tamb = 75 °C.  
(4) Tamb = 25 °C.  
Fig.5 Forward current as a function of forward  
voltage; typical values.  
Fig.6 Reverse current as a function of reverse  
voltage; typical values.  
MCD766  
3
10  
handbook, halfpage  
C
d
(pF)  
2
10  
10  
0
20  
40  
60  
V
(V)  
R
f = 1 MHz; Tamb = 25 °C.  
Fig.7 Diode capacitance as a function of reverse  
voltage; typical values.  
1999 Sep 20  
4
NXP Semiconductors  
Product data sheet  
Schottky barrier double diodes  
BAT160 series  
PACKAGE OUTLINE  
Plastic surface mounted package; collector pad for good heat transfer; 4 leads  
SOT223  
D
B
E
A
X
c
y
H
v
M
A
E
b
1
4
Q
A
A
1
L
1
2
3
p
e
b
p
w
M
B
detail X  
1
e
0
2
4 mm  
scale  
DIMENSIONS (mm are the original dimensions)  
A
UNIT  
A
b
b
c
D
E
e
e
H
L
p
Q
v
w
y
p
1
1
1
E
1.8  
1.5  
0.10 0.80  
0.01 0.60  
3.1  
2.9  
0.32  
0.22  
6.7  
6.3  
3.7  
3.3  
7.3  
6.7  
1.1  
0.7  
0.95  
0.85  
mm  
4.6  
2.3  
0.2  
0.1  
0.1  
REFERENCES  
JEDEC  
EUROPEAN  
PROJECTION  
OUTLINE  
VERSION  
ISSUE DATE  
IEC  
EIAJ  
97-02-28  
99-09-13  
SOT223  
SC-73  
1999 Sep 20  
5
NXP Semiconductors  
Product data sheet  
Schottky barrier double diodes  
BAT160 series  
DATA SHEET STATUS  
DOCUMENT  
STATUS(1)  
PRODUCT  
STATUS(2)  
DEFINITION  
Objective data sheet  
Development  
This document contains data from the objective specification for product  
development.  
Preliminary data sheet  
Product data sheet  
Qualification  
Production  
This document contains data from the preliminary specification.  
This document contains the product specification.  
Notes  
1. Please consult the most recently issued document before initiating or completing a design.  
2. The product status of device(s) described in this document may have changed since this document was published  
and may differ in case of multiple devices. The latest product status information is available on the Internet at  
URL http://www.nxp.com.  
DISCLAIMERS  
above those given in the Characteristics sections of this  
document is not implied. Exposure to limiting values for  
extended periods may affect device reliability.  
General Information in this document is believed to be  
accurate and reliable. However, NXP Semiconductors  
does not give any representations or warranties,  
expressed or implied, as to the accuracy or completeness  
of such information and shall have no liability for the  
consequences of use of such information.  
Terms and conditions of sale NXP Semiconductors  
products are sold subject to the general terms and  
conditions of commercial sale, as published at  
http://www.nxp.com/profile/terms, including those  
pertaining to warranty, intellectual property rights  
infringement and limitation of liability, unless explicitly  
otherwise agreed to in writing by NXP Semiconductors. In  
case of any inconsistency or conflict between information  
in this document and such terms and conditions, the latter  
will prevail.  
Right to make changes NXP Semiconductors  
reserves the right to make changes to information  
published in this document, including without limitation  
specifications and product descriptions, at any time and  
without notice. This document supersedes and replaces all  
information supplied prior to the publication hereof.  
No offer to sell or license Nothing in this document  
may be interpreted or construed as an offer to sell products  
that is open for acceptance or the grant, conveyance or  
implication of any license under any copyrights, patents or  
other industrial or intellectual property rights.  
Suitability for use NXP Semiconductors products are  
not designed, authorized or warranted to be suitable for  
use in medical, military, aircraft, space or life support  
equipment, nor in applications where failure or malfunction  
of an NXP Semiconductors product can reasonably be  
expected to result in personal injury, death or severe  
property or environmental damage. NXP Semiconductors  
accepts no liability for inclusion and/or use of NXP  
Semiconductors products in such equipment or  
applications and therefore such inclusion and/or use is at  
the customer’s own risk.  
Export control This document as well as the item(s)  
described herein may be subject to export control  
regulations. Export might require a prior authorization from  
national authorities.  
Quick reference data The Quick reference data is an  
extract of the product data given in the Limiting values and  
Characteristics sections of this document, and as such is  
not complete, exhaustive or legally binding.  
Applications Applications that are described herein for  
any of these products are for illustrative purposes only.  
NXP Semiconductors makes no representation or  
warranty that such applications will be suitable for the  
specified use without further testing or modification.  
Limiting values Stress above one or more limiting  
values (as defined in the Absolute Maximum Ratings  
System of IEC 60134) may cause permanent damage to  
the device. Limiting values are stress ratings only and  
operation of the device at these or any other conditions  
1999 Sep 20  
6
NXP Semiconductors  
Customer notification  
This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were  
made to the content, except for the legal definitions and disclaimers.  
Contact information  
For additional information please visit: http://www.nxp.com  
For sales offices addresses send e-mail to: salesaddresses@nxp.com  
© NXP B.V. 2009  
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.  
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed  
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license  
under patent- or other industrial or intellectual property rights.  
Printed in The Netherlands  
115002/03/pp7  
Date of release: 1999 Sep 20  
Document order number: 9397 750 06097  

相关型号:

BAT160CT/R

DIODE 1 A, 2 ELEMENT, SILICON, SIGNAL DIODE, PLASTIC, SC-73, 4 PIN, Signal Diode
NXP

BAT160CTRL

DIODE 1 A, 2 ELEMENT, SILICON, SIGNAL DIODE, PLASTIC, SMD, 4 PIN, Signal Diode
NXP

BAT160CTRL13

DIODE 1 A, 2 ELEMENT, SILICON, SIGNAL DIODE, PLASTIC, SMD, 4 PIN, Signal Diode
NXP

BAT160S

Schottky barrier double diodes
NXP

BAT160S

Schottky barrier double diodeProduction
NEXPERIA

BAT160S,115

DIODE ARRAY SCHOTTKY 60V 1A SC73
ETC

BAT160S-Q

Schottky barrier double diodeProduction
NEXPERIA

BAT160SERIES

Schottky barrier double diodes
ETC

BAT160ST/R

DIODE 1 A, 2 ELEMENT, SILICON, SIGNAL DIODE, PLASTIC, SC-73, 4 PIN, Signal Diode
NXP

BAT160STRL

DIODE 1 A, 2 ELEMENT, SILICON, SIGNAL DIODE, PLASTIC, SMD, 4 PIN, Signal Diode
NXP

BAT160STRL13

DIODE 1 A, 2 ELEMENT, SILICON, SIGNAL DIODE, PLASTIC, SMD, 4 PIN, Signal Diode
NXP

BAT165

Silicon Schottky Diode (Low-power Schottky rectifier diode Miniature plastic package for surface mounting SMD)
INFINEON