BAT74S/T3 [NXP]

DIODE 0.2 A, 2 ELEMENT, SILICON, SIGNAL DIODE, PLASTIC, SC-88, 6 PIN, Signal Diode;
BAT74S/T3
型号: BAT74S/T3
厂家: NXP    NXP
描述:

DIODE 0.2 A, 2 ELEMENT, SILICON, SIGNAL DIODE, PLASTIC, SC-88, 6 PIN, Signal Diode

光电二极管
文件: 总8页 (文件大小:52K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
DISCRETE SEMICONDUCTORS  
DATA SHEET  
book, halfpage  
BAT74S  
Schottky barrier double diode  
Product specification  
2003 Apr 11  
Supersedes data of 1998 Jul 10  
Philips Semiconductors  
Product specification  
Schottky barrier double diode  
BAT74S  
FEATURES  
PINNING  
PIN  
Low forward voltage  
Guard ring protected  
Small SMD package.  
DESCRIPTION  
1
2
3
4
5
6
anode 1  
not connected  
cathode 2  
APPLICATIONS  
anode 2  
not connected  
cathode 1  
Ultra high-speed switching  
Voltage clamping  
Protection circuits  
Blocking diodes.  
6
5
4
6
1
5
2
4
handbook, halfpage  
DESCRIPTION  
Planar Schottky barrier double diode with an integrated  
guard ring for stress protection.  
3
MDB277  
1
Top view  
2
3
Two separate dies are encapsulated in a SOT363 (SC-88)  
small SMD plastic package.  
MSA370  
Marking code: 74.  
Fig.1 Simplified outline (SOT363; SC-88) and  
symbol.  
LIMITING VALUES  
In accordance with the Absolute Maximum Rating System (IEC 60134).  
SYMBOL  
Per diode  
PARAMETER  
CONDITIONS  
MIN.  
MAX.  
UNIT  
VR  
continuous reverse voltage  
continuous forward current  
repetitive peak forward current  
non-repetitive peak forward current  
total power dissipation  
30  
V
IF  
200  
mA  
mA  
mA  
mW  
°C  
IFRM  
IFSM  
Ptot  
Tstg  
Tj  
tp 1 s; δ ≤ 0.5  
tp < 10 ms  
amb 25 °C; see Fig.2  
300  
600  
T
240  
storage temperature  
65  
+150  
125  
junction temperature  
°C  
Tamb  
operating ambient temperature  
65  
+125  
°C  
Double diode operation  
VR  
VR  
IF  
continuous reverse voltage  
30  
V
continuous reverse voltage  
continuous forward current  
repetitive peak forward current  
series connection  
60  
110(1)  
V
mA  
mA  
IFRM  
tp 1 s; δ ≤ 0.5  
200  
Note  
1. If both diodes are in forward operation at the same moment, total device current is max. 110 mA. If one diode is in  
reverse and the other in forward operation at the same moment, total device current is max. 200 mA.  
2003 Apr 11  
2
Philips Semiconductors  
Product specification  
Schottky barrier double diode  
BAT74S  
ELECTRICAL CHARACTERISTICS  
Tamb = 25 °C unless otherwise specified.  
SYMBOL  
PARAMETER  
CONDITIONS  
MAX.  
UNIT  
Per diode  
VF  
forward voltage  
reverse current  
see Fig.3  
IF = 0.1 mA  
IF = 1 mA  
240  
mV  
320  
400  
500  
800  
2
mV  
mV  
mV  
mV  
µA  
IF = 10 mA  
IF = 30 mA  
IF = 100 mA  
IR  
trr  
VR = 25 V; note 1; see Fig.4  
reverse recovery time  
when switched from IF = 10 mA to  
IR = 10 mA; RL = 100 ;  
5
ns  
measured at IR = 1 mA  
Cd  
diode capacitance  
f = 1 MHz; VR = 1 V; see Fig.5  
10  
pF  
Note  
1. Pulsed test: tp = 300 µs; δ = 0.02.  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
thermal resistance from junction to ambient note 1  
CONDITIONS  
VALUE  
416  
UNIT  
K/W  
Rth j-a  
Note  
1. Refer to SOT363 standard mounting conditions.  
2003 Apr 11  
3
Philips Semiconductors  
Product specification  
Schottky barrier double diode  
BAT74S  
GRAPHICAL DATA  
MSA892  
MBL889  
300  
tot  
3
10  
handbook, halfpage  
I
(1) (2) (3)  
F
P
(mA)  
(mW)  
2
10  
200  
10  
100  
(1)  
1
(2) (3)  
1
0
10  
0
75  
150  
0
0.4  
0.8  
1.2  
T
(°C)  
V
(V)  
amb  
F
(1) Tamb = 125 °C.  
(2) Tamb = 85 °C.  
(3) Tamb = 25 °C.  
Fig.3 Forward current as a function of forward  
voltage; typical values.  
Fig.2 Power derating curve.  
MSA893  
MSA891  
3
10  
15  
handbook, halfpage  
I
(1)  
(2)  
R
C
d
(pF)  
(µA)  
2
10  
10  
10  
5
0
1
1
(3)  
10  
0
10  
20  
30  
0
10  
20  
30  
V
(V)  
V
(V)  
R
R
(1) Tamb = 125 °C.  
(2) Tamb = 85 °C.  
(3) Tamb = 25 °C.  
f = 1 MHz; Tamb = 25 °C.  
Fig.4 Reverse current as a function of reverse  
voltage; typical values.  
Fig.5 Diode capacitance as a function of reverse  
voltage; typical values.  
2003 Apr 11  
4
Philips Semiconductors  
Product specification  
Schottky barrier double diode  
BAT74S  
handbook, halfpage  
I
F
dI  
F
dt  
t
10%  
90%  
Q
r
I
R
t
MBL888  
rr  
Fig.6 Reverse recovery definitions.  
2003 Apr 11  
5
Philips Semiconductors  
Product specification  
Schottky barrier double diode  
BAT74S  
PACKAGE OUTLINE  
Plastic surface mounted package; 6 leads  
SOT363  
D
B
E
A
X
y
H
v
M
A
E
6
5
4
Q
pin 1  
index  
A
A
1
1
2
3
c
e
1
b
L
p
w
M B  
p
e
detail X  
0
1
2 mm  
scale  
DIMENSIONS (mm are the original dimensions)  
A
1
UNIT  
A
b
c
D
E
e
e
H
L
Q
v
w
y
p
p
1
E
max  
0.30  
0.20  
1.1  
0.8  
0.25  
0.10  
2.2  
1.8  
1.35  
1.15  
2.2  
2.0  
0.45  
0.15  
0.25  
0.15  
mm  
0.1  
1.3  
0.65  
0.2  
0.2  
0.1  
REFERENCES  
JEDEC  
EUROPEAN  
PROJECTION  
OUTLINE  
VERSION  
ISSUE DATE  
IEC  
EIAJ  
97-02-28  
SOT363  
SC-88  
2003 Apr 11  
6
Philips Semiconductors  
Product specification  
Schottky barrier double diode  
BAT74S  
DATA SHEET STATUS  
DATA SHEET  
STATUS(1)  
PRODUCT  
STATUS(2)(3)  
LEVEL  
DEFINITION  
I
Objective data  
Development This data sheet contains data from the objective specification for product  
development. Philips Semiconductors reserves the right to change the  
specification in any manner without notice.  
II  
Preliminary data Qualification  
This data sheet contains data from the preliminary specification.  
Supplementary data will be published at a later date. Philips  
Semiconductors reserves the right to change the specification without  
notice, in order to improve the design and supply the best possible  
product.  
III  
Product data  
Production  
This data sheet contains data from the product specification. Philips  
Semiconductors reserves the right to make changes at any time in order  
to improve the design, manufacturing and supply. Relevant changes will  
be communicated via a Customer Product/Process Change Notification  
(CPCN).  
Notes  
1. Please consult the most recently issued data sheet before initiating or completing a design.  
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was  
published. The latest information is available on the Internet at URL W://www.semiconductors.philips.com.  
3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.  
DEFINITIONS  
DISCLAIMERS  
Short-form specification  
The data in a short-form  
Life support applications  
These products are not  
specification is extracted from a full data sheet with the  
same type number and title. For detailed information see  
the relevant data sheet or data handbook.  
designed for use in life support appliances, devices, or  
systems where malfunction of these products can  
reasonably be expected to result in personal injury. Philips  
Semiconductors customers using or selling these products  
for use in such applications do so at their own risk and  
agree to fully indemnify Philips Semiconductors for any  
damages resulting from such application.  
Limiting values definition Limiting values given are in  
accordance with the Absolute Maximum Rating System  
(IEC 60134). Stress above one or more of the limiting  
values may cause permanent damage to the device.  
These are stress ratings only and operation of the device  
at these or at any other conditions above those given in the  
Characteristics sections of the specification is not implied.  
Exposure to limiting values for extended periods may  
affect device reliability.  
Right to make changes  
Philips Semiconductors  
reserves the right to make changes in the products -  
including circuits, standard cells, and/or software -  
described or contained herein in order to improve design  
and/or performance. When the product is in full production  
(status ‘Production’), relevant changes will be  
Application information  
Applications that are  
communicated via a Customer Product/Process Change  
Notification (CPCN). Philips Semiconductors assumes no  
responsibility or liability for the use of any of these  
products, conveys no licence or title under any patent,  
copyright, or mask work right to these products, and  
makes no representations or warranties that these  
products are free from patent, copyright, or mask work  
right infringement, unless otherwise specified.  
described herein for any of these products are for  
illustrative purposes only. Philips Semiconductors make  
no representation or warranty that such applications will be  
suitable for the specified use without further testing or  
modification.  
2003 Apr 11  
7
Philips Semiconductors – a worldwide company  
Contact information  
For additional information please visit http://www.semiconductors.philips.com.  
Fax: +31 40 27 24825  
For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.  
© Koninklijke Philips Electronics N.V. 2003  
SCA75  
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.  
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed  
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license  
under patent- or other industrial or intellectual property rights.  
Printed in The Netherlands  
613514/04/pp8  
Date of release: 2003 Apr 11  
Document order number: 9397 750 11161  

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