BAT754 [NXP]

Schottky barrier double diodes; 肖特基势垒二极管双


型号：	BAT754
厂家：	NXP
描述：	Schottky barrier double diodes 肖特基势垒二极管双整流二极管光电二极管 PC
文件：	总8页 (文件大小：51K)
中文：	中文翻译
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DISCRETE SEMICONDUCTORS

DATA SHEET

age

M3D088

BAT754 series

Schottky barrier (double) diodes

Product speciﬁcation

1999 Aug 05

Philips Semiconductors

Product speciﬁcation

Schottky barrier (double) diodes

BAT754 series

FEATURES

PINNING

• Very low forward voltage

• Guard ring protected

BAT754

a₁

a₂

• Small plastic SMD package

• Low diode capacitance.

n.c.

k₁

k₂

a₁

k₂

MLC360

a₁, a₂k₁, k₂k₁, a₂

APPLICATIONS

• Ultra high-speed switching

• Voltage clamping

Fig.3 BAT754A diode

configuration (symbol).

handbook, 2 columns

• Protection circuits

• Blocking diodes

• Low power consumption

applications, e.g. hand-held

applications.

Top view

MGC421

DESCRIPTION

MLC359

Planar Schottky barrier diodes

encapsulated in a SOT23 small

plastic SMD package. Low forward

voltage selection of the BAT54 series.

Single diodes and double diodes with

different pinning are available.

Fig.1 Simplified outline

(SOT23) and pin

configuration.

Fig.4 BAT754C diode

configuration (symbol).

MARKING

TYPE

NUMBER

MARKING

CODE

n.c.

MLC357

BAT754

MLC358

BAT754A

BAT754C

BAT754S

Fig.2 BAT754 single diode

configuration (symbol).

Fig.5 BAT754S diode

configuration (symbol).

1999 Aug 05

Philips Semiconductors

Product speciﬁcation

Schottky barrier (double) diodes

BAT754 series

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL

Per diode

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

V_R

continuous reverse voltage

−

I_F

continuous forward current

200

300

600

I_FRM

I_FSM

repetitive peak forward current

non-repetitive peak forward current

t_p≤ 1 s; δ ≤ 0.5

t = 8.3 ms half sinewave;

JEDEC method

T_stg

T_j

storage temperature

−65

−

+150

125

°C

junction temperature

T_amb

operating ambient temperature

−65

+125

ELECTRICAL CHARACTERISTICS

_amb= 25 °C unless otherwise speciﬁed.

SYMBOL PARAMETER

CONDITIONS

TYP.

MAX.

UNIT

Per diode

V_F

forward voltage

see Fig.6

I_F= 0.1 mA

−

200

260

340

420

−

µA

I_F= 1 mA

−

I_F= 10 mA

−

I_F= 30 mA

−

I_F= 100 mA

600

−

I_R

reverse current

V_R= 25 V; note 1; see Fig.7

f = 1 MHz; V_R= 1 V; see Fig.8

C_d

diode capacitance

−

Note

1. Pulse test: t_p= 300 µs; δ ≤ 0.02.

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

CONDITIONS

VALUE

500

UNIT

R_{th j-a}

thermal resistance from junction to

ambient

note 1

K/W

Note

1. Refer to SOT23 standard mounting conditions.

1999 Aug 05

Philips Semiconductors

Product speciﬁcation

Schottky barrier (double) diodes

BAT754 series

GRAPHICAL DATA

MSA892

MSA893

(1)

handbook, halfpage

(µA)

(1) (2) (3)

(mA)

(2)

(1)

(2) (3)

(3)

0.4

0.8

1.2

(V)

(1) T_amb= 125 °C.

(2) T_amb= 85 °C.

(3) T_amb= 25 °C.

(1) T_amb= 125 °C.

(2) T_amb= 85 °C.

(3) T_amb= 25 °C.

Fig.6 Forward current as a function of forward

voltage; typical values.

Fig.7 Reverse current as a function of reverse

voltage; typical values.

MSA891

(pF)

(V)

f = 1 MHz; T_amb= 25 °C.

Fig.8 Diode capacitance as a function of reverse

voltage; typical values.

1999 Aug 05

Philips Semiconductors

Product speciﬁcation

Schottky barrier (double) diodes

BAT754 series

PACKAGE OUTLINE

Plastic surface mounted package; 3 leads

SOT23

w M

detail X

2 mm

scale

DIMENSIONS (mm are the original dimensions)

UNIT

max.

1.1

0.9

0.48

0.38

0.15

0.09

3.0

2.8

1.4

1.2

2.5

2.1

0.45

0.15

0.55

0.45

0.1

1.9

0.95

0.2

0.1

REFERENCES

JEDEC

EUROPEAN

PROJECTION

OUTLINE

VERSION

ISSUE DATE

IEC

EIAJ

97-02-28

SOT23

1999 Aug 05

Philips Semiconductors

Product speciﬁcation

Schottky barrier (double) diodes

BAT754 series

DEFINITIONS

Data sheet status

Objective speciﬁcation

Preliminary speciﬁcation

Product speciﬁcation

This data sheet contains target or goal speciﬁcations for product development.

This data sheet contains preliminary data; supplementary data may be published later.

This data sheet contains ﬁnal product speciﬁcations.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or

more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation

of the device at these or at any other conditions above those given in the Characteristics sections of the speciﬁcation

is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the speciﬁcation.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these

products can reasonably be expected to result in personal injury. Philips customers using or selling these products for

use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such

improper use or sale.

1999 Aug 05

Philips Semiconductors

Product speciﬁcation

Schottky barrier (double) diodes

BAT754 series

NOTES

1999 Aug 05

Philips Semiconductors – a worldwide company

Argentina: see South America

Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB,

Tel. +31 40 27 82785, Fax. +31 40 27 88399

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Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6,

220050 MINSK, Tel. +375 172 20 0733, Fax. +375 172 20 0773

Pakistan: see Singapore

Belgium: see The Netherlands

Brazil: see South America

Philippines: Philips Semiconductors Philippines Inc.,

106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI,

Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474

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Tel. +48 22 612 2831, Fax. +48 22 612 2327

Portugal: see Spain

Romania: see Italy

Canada: PHILIPS SEMICONDUCTORS/COMPONENTS,

Tel. +1 800 234 7381, Fax. +1 800 943 0087

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Tel. +65 350 2538, Fax. +65 251 6500

Slovakia: see Austria

Slovenia: see Italy

Denmark: Sydhavnsgade 23, 1780 COPENHAGEN V,

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Hungary: see Austria

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India: Philips INDIA Ltd, Band Box Building, 2nd floor,

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Tel. +41 1 488 2741 Fax. +41 1 488 3263

Indonesia: PT Philips Development Corporation, Semiconductors Division,

Gedung Philips, Jl. Buncit Raya Kav.99-100, JAKARTA 12510,

Tel. +62 21 794 0040 ext. 2501, Fax. +62 21 794 0080

Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1,

TAIPEI, Taiwan Tel. +886 2 2134 2886, Fax. +886 2 2134 2874

Ireland: Newstead, Clonskeagh, DUBLIN 14,

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TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007

Turkey: Yukari Dudullu, Org. San. Blg., 2.Cad. Nr. 28 81260 Umraniye,

ISTANBUL, Tel. +90 216 522 1500, Fax. +90 216 522 1813

Italy: PHILIPS SEMICONDUCTORS, Via Casati, 23 - 20052 MONZA (MI),

Tel. +39 039 203 6838, Fax +39 039 203 6800

Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7,

252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461

Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku,

TOKYO 108-8507, Tel. +81 3 3740 5130, Fax. +81 3 3740 5057

United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,

MIDDLESEX UB3 5BX, Tel. +44 208 730 5000, Fax. +44 208 754 8421

Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL,

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Tel. +1 800 234 7381, Fax. +1 800 943 0087

Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR,

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Uruguay: see South America

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Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,

Middle East: see Italy

Tel. +381 11 62 5344, Fax.+381 11 63 5777

For all other countries apply to: Philips Semiconductors,

Internet: http://www.semiconductors.philips.com

International Marketing & Sales Communications, Building BE-p, P.O. Box 218,

5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825

SCA67

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed

without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license

under patent- or other industrial or intellectual property rights.

Printed in The Netherlands

115002/01/pp8

Date of release: 1999 Aug 05

Document order number: 9397 750 06048

BAT754 [NXP]

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