BAT86AMO [NXP]
DIODE 0.2 A, SILICON, SIGNAL DIODE, DO-34, HERMETIC SEALED, GLASS PACKAGE-2, Signal Diode;
| 型号： | BAT86AMO |
| 厂家： | 
NXP |
| 描述： | DIODE 0.2 A, SILICON, SIGNAL DIODE, DO-34, HERMETIC SEALED, GLASS PACKAGE-2, Signal Diode 二极管 |
| 文件： | 总8页 (文件大小：50K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
halfpage
BAT86
Schottky barrier diode
Product specification
2000 May 25
Supersedes data of 1996 Mar 20
Philips Semiconductors
Product specification
Schottky barrier diode
BAT86
FEATURES
DESCRIPTION
• Low forward voltage
• Guard ring protected
Planar Schottky barrier diode with an integrated protection ring against static
discharges, encapsulated in a hermetically-sealed subminiature SOD68
(DO-34) package. The diode is suitable for mounting on a 2 E (5.08 mm) pitch.
• Hermetically-sealed leaded glass
package.
APPLICATIONS
k
a
handbook, halfpage
• Ultra high-speed switching
• Voltage clamping
MAM193
• Protection circuits
• Blocking diodes.
Fig.1 Simplified outline (SOD68; DO-34) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
continuous reverse voltage
continuous forward current
average forward current
CONDITIONS
MIN.
MAX.
50
UNIT
VR
−
−
−
V
IF
200
200
mA
mA
IF(AV)
PCB mounting, lead length = 4 mm;
VRWM = 25 V; a = 1.57; δ = 0.5;
Tamb = 50 °C; see Fig.2
IFRM
IFSM
Tstg
Tj
repetitive peak forward current
non-repetitive peak forward current
storage temperature
tp ≤ 1 s; δ ≤ 0.5
tp ≤ 10 ms
−
−
500
5
mA
A
−65
−
+150
125
+125
°C
°C
°C
junction temperature
Tamb
operating ambient temperature
−65
2000 May 25
2
Philips Semiconductors
Product specification
Schottky barrier diode
BAT86
ELECTRICAL CHARACTERISTICS
Tamb = 25 °C; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
VF
forward voltage
see Fig.3
IF = 0.1 mA
IF = 1 mA
300
mV
380
450
600
900
5
mV
mV
mV
mV
µA
IF = 10 mA
IF = 30 mA
IF = 100 mA
IR
trr
reverse current
VR = 40V; see Fig.4; note 1
reverse recovery time
diode capacitance
when switched from IF = 10 mA to
IR = 10 mA; RL = 100 Ω;
measured at IR = 1 mA; see Fig.6
4
ns
Cd
f = 1 MHz; VR = 1 V; see Fig.5
8
pF
Note
1. Pulsed test: tp = 300 µs; δ = 0.02.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
thermal resistance from junction to ambient note 1
CONDITIONS
VALUE
320
UNIT
K/W
Rth j-a
Note
1. Refer to SOD68 standard mounting conditions.
2000 May 25
3
Philips Semiconductors
Product specification
Schottky barrier diode
BAT86
GRAPHICAL DATA
MRA540
MLD357
3
10
250
handbook, halfpage
handbook, halfpage
I
F(AV)
I
(1) (2) (3)
F
(mA)
200
(mA)
2
10
150
100
50
10
(1)
1
(2) (3)
−1
10
0
0
50
100
150
0
0.4
0.8
1.2
V
(V)
o
F
T
( C)
amb
(1) Tamb = 125 °C.
(2) amb = 85 °C.
(3) Tamb = 25 °C.
T
Fig.3 Forward current as a function of forward
voltage; typical values.
Fig.2 Derating curve.
MGC686
MGC687
5
12
10
handbook, halfpage
R
(nA)
handbook, halfpage
(1)
(2)
I
C
d
(pF)
4
10
3
8
10
2
10
10
1
4
0
(3)
−1
10
0
10
20
30
40
50
0
10
20
30
40
50
V
(V)
V
(V)
R
R
(1) Tamb = 85 °C.
(2) Tamb = 25 °C.
(3) Tamb = −40 °C.
f = 1 MHz.
Fig.4 Reverse current as a function of reverse
voltage; typical values.
Fig.5 Diode capacitance as a function of reverse
voltage; typical values.
2000 May 25
4
Philips Semiconductors
Product specification
Schottky barrier diode
BAT86
andbook, halfpage
I
F
dI
F
dt
t
10%
90%
Q
r
I
R
t
MRC129 - 1
f
Fig.6 Reverse recovery definitions.
2000 May 25
5
Philips Semiconductors
Product specification
Schottky barrier diode
BAT86
PACKAGE OUTLINE
Hermetically sealed glass package; axial leaded; 2 leads
SOD68
(1)
b
G
D
L
L
1
DIMENSIONS (mm are the original dimensions)
0
2
4 mm
G
D
L
b
1
UNIT
max.
min.
max.
max.
scale
mm
0.55
1.6
3.04
25.4
Note
1. The marking band indicates the cathode.
REFERENCES
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
JEDEC
DO-34
EIAJ
97-06-09
SOD68
2000 May 25
6
Philips Semiconductors
Product specification
Schottky barrier diode
BAT86
DATA SHEET STATUS
PRODUCT
STATUS
DATA SHEET STATUS
DEFINITIONS (1)
Objective specification
Development This data sheet contains the design target or goal specifications for
product development. Specification may change in any manner without
notice.
Preliminary specification Qualification
This data sheet contains preliminary data, and supplementary data will be
published at a later date. Philips Semiconductors reserves the right to
make changes at any time without notice in order to improve design and
supply the best possible product.
Product specification
Production
This data sheet contains final specifications. Philips Semiconductors
reserves the right to make changes at any time without notice in order to
improve design and supply the best possible product.
Note
1. Please consult the most recently issued data sheet before initiating or completing a design.
DEFINITIONS
DISCLAIMERS
Short-form specification
The data in a short-form
Life support applications
These products are not
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Right to make changes
Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
the use of any of these products, conveys no licence or title
under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.
Application information
Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
2000 May 25
7
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SCA
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under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
613514/02/pp8
Date of release: 2000 May 25
Document order number: 9397 750 07026
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