BAT93 [NXP]
Schottky barrier diode; 肖特基二极管
| 型号： | BAT93 |
| 厂家： | 
NXP |
| 描述： | Schottky barrier diode |
| 文件： | 总8页 (文件大小：50K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
BAT93
Schottky barrier diode
December 1993
Product specification
File under Discrete Semiconductors, SC01
Philips Semiconductors
Philips Semiconductors
Product specification
Schottky barrier diode
BAT93
FEATURES
QUICK REFERENCE DATA
SYMBOL PARAMETER
• Ultra-fast switching speed
• Low forward voltage
• Two-pin SMD package.
CONDITIONS MAX. UNIT
V
continuous reverse voltage
continuous forward current
forward voltage
30
V
R
I
200
400
2
mA
mV
µA
°C
pF
F
V
I = 10 mA
F
F
DESCRIPTION
I
reverse current
V = 25 V
R
R
Silicon epitaxial Schottky barrier
diode with an integrated guard ring for
stress protection.Iintended for high
speed switching, circuit protection
and voltage clamping applications.
The diode is encapsulated in a
SOD123 SMD plastic package.
T
junction temperature
diode capacitance
150
10
j
C
V = 1 V
R
d
k
a
MAM058
Top view
Fig.1 Simplified outline (SOD123) and symbol.
December 1993
2
Philips Semiconductors
Product specification
Schottky barrier diode
BAT93
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
30
UNIT
V
continuous reverse voltage
continuous forward current
repetitive peak forward current
−
−
−
−
V
R
I
I
I
200
300
600
mA
mA
mA
F
t ≤ 1 s; δ ≤ 0.5
FRM
FSM
p
non-repetitive peak forward
current
t < 10 ms
p
P
total power dissipation
storage temperature
T
≤ 25°C
−
250
mW
°C
tot
stg
amb
j
amb
T
T
T
−65
−65
−
+150
+150
150
operating ambient temperature
junction temperature
°C
°C
THERMAL RESISTANCE
SYMBOL
PARAMETER
THERMAL RESISTANCE
R
from junction to ambient; note 1
500 K/W
th j-a
Note
1. Printed-circuit board mounting (SOD123 standard conditions).
CHARACTERISTICS
T = 25 °C unless otherwise specified.
j
SYMBOL
PARAMETER
CONDITIONS
I = 0.1 mA
MIN. MAX. UNIT
V
forward voltage
−
240
320
400
500
800
−
mV
mV
mV
mV
mV
V
F
F
I = 1 mA
−
F
I = 10 mA
−
F
I = 30 mA
−
F
I = 100 mA
−
F
V
reverse breakdown voltage
reverse current
I = 10 µA
30
−
(BR)R
R
I
V = 25 V; note 1
2
µA
pF
R
R
C
diode capacitance
V = 1 V; f = 1 MHz
−
10
d
R
t
reverse recovery time
when switched from I = 10 mA
−
5
ns
rr
F
to I = 10 mA; R = 100 Ω;
R
L
measured at I = 1 mA
R
Note
1. Pulsed test: t = 300 µs; δ = 0.02.
p
December 1993
3
Philips Semiconductors
Product specification
Schottky barrier diode
BAT93
MSA892
MSA893
(1)
3
2
10
3
10
dbook, halfpage
I
I
R
(µA)
(1) (2) (3)
F
(mA)
2
10
10
(2)
10
10
1
(1)
(2) (3)
1
1
(3)
1
10
10
0
10
20
30
0
0.4
0.8
1.2
V
(V)
V
(V)
R
F
(1)T
(2)T
(3)T
= 125 °C.
= 85 °C.
= 25 °C.
(1)T
(2)T
(3)T
= 125 °C.
amb
amb
amb
amb
amb
amb
= 85 °C.
= 25 °C.
Fig.2 Forward current as a function of
forward voltage.
Fig.3 Reverse current as a function of
reverse voltage.
MSA891
MSA894
15
300
C
P
d
tot
(mW)
(pF)
10
200
5
0
100
0
0
10
20
30
o
0
75
150
V
(V)
T
amb
( C)
R
Fig.4 Diode capacitance as a function of
reverse voltage.
Fig.5 Power derating curve.
December 1993
4
Philips Semiconductors
Product specification
Schottky barrier diode
BAT93
PACKAGE OUTLINE
o
o
17 max (2x)
12 max
(2x)
0.55
0.40
1.35
max
0.19
0.12
0.1
max
0.25
min
o
5
max (2x)
A
o
MBA038 - 2
12 max
(2x)
cathode colour band
1.7
1.4
0.70
0.50
2.85
2.55
3.85
3.55
A
0.2
M
Dimensions in mm.
Fig.6 SOD123.
December 1993
5
Philips Semiconductors
Product specification
Schottky barrier diode
BAT93
DEFINITIONS
Data Sheet Status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
December 1993
6
Philips Semiconductors
Product specification
Schottky barrier diode
BAT93
NOTES
December 1993
7
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