BAV10 [NXP]

High-speed diode; 高速二极管


型号：	BAV10
厂家：	NXP
描述：	High-speed diode 高速二极管整流二极管
文件：	总7页 (文件大小：38K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

DISCRETE SEMICONDUCTORS

DATA SHEET

M3D176

BAV10

High-speed diode

1996 Sep 16

Product speciﬁcation

Supersedes data of April 1996

Philips Semiconductors

Product speciﬁcation

High-speed diode

BAV10

FEATURES

DESCRIPTION

• Hermetically sealed leaded glass

SOD27 (DO-35) package

The BAV10 is a high-speed switching diode fabricated in planar technology,

and encapsulated in the hermetically sealed leaded glass SOD27 (DO-35)

package.

• High switching speed: max. 6 ns

• General application

• Continuous reverse voltage:

max. 60 V

handbook, halfpage

• Repetitive peak reverse voltage:

max. 60 V

MAM246

• Repetitive peak forward current:

max. 600 mA.

The diode is type branded.

APPLICATIONS

Fig.1 Simplified outline (SOD27; DO-35) and symbol.

• High-speed switching.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

V_RRM

V_R

repetitive peak reverse voltage

continuous reverse voltage

continuous forward current

repetitive peak forward current

−

I_F

see Fig.2; note 1

300

600

I_FRM

I_FSM

non-repetitive peak forward current square wave; T_j= 25 °C prior to

surge; see Fig.4

t = 1 µs

t = 100 µs

t = 1 s

−

P_tot

T_stg

T_j

total power dissipation

storage temperature

junction temperature

T_amb= 25 °C; note 1

−

350

+200

200

°C

−65

−

Note

1. Device mounted on an FR4 printed circuit-board; lead length 10 mm.

1996 Sep 16

Philips Semiconductors

Product speciﬁcation

High-speed diode

BAV10

ELECTRICAL CHARACTERISTICS

T_j= 25 °C; unless otherwise speciﬁed.

SYMBOL

PARAMETER

forward voltage

CONDITIONS

MIN.

MAX.

UNIT

V_F

see Fig.3

I_F= 10 mA

−

750

1.0

I_F= 200 mA

I_F= 500 mA

1.25

950

I_F= 200 mA; T_j= 100 °C

see Fig.5

I_R

reverse current

V_R= 60 V

−

100

2.5

µA

V_R= 60 V; T_j= 150 °C

f = 1 MHz; V_R= 0; see Fig.6

C_d

t_rr

diode capacitance

reverse recovery time

when switched from I_F= 400 mA to

I_R= 400 mA; R_L= 100 Ω;

measured at I_R= 40 mA; see Fig.7

V_fr

forward recovery voltage

when switched from I_F= 400 mA;

t_r= 30 ns; see Fig.8

−

when switched from I_F= 400 mA;

t_r= 10 ns; see Fig.8

1.5

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

CONDITIONS

thermal resistance from junction to tie-point lead length 10 mm

thermal resistance from junction to ambient lead length 10 mm; note 1

VALUE

240

UNIT

R_{th j-tp}

R_{th j-a}

K/W

500

Note

1. Device mounted on a printed circuit-board without metallization pad.

1996 Sep 16

Philips Semiconductors

Product speciﬁcation

High-speed diode

BAV10

GRAPHICAL DATA

MBG454

MBG457

400

600

handbook, halfpage

(1) (2) (3)

(mA)

300

400

200

100

200

100

200

( C)

(V)

amb

(1) T_j= 175 °C; typical values.

(2) T_j= 25 °C; typical values.

(3) T_j= 25 °C; maximum values.

Device mounted on an FR4 printed-circuit board; lead length 10 mm.

Fig.2 Maximum permissible continuous forward

current as a function of ambient

temperature.

Fig.3 Forward current as a function of forward

voltage.

MBG703

handbook, full pagewidth

FSM

(A)

−1

(µs)

Based on square wave currents.

T_j= 25 °C prior to surge.

Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.

1996 Sep 16

Philips Semiconductors

Product speciﬁcation

High-speed diode

BAV10

MGD011

MGD002

handbook, halfpage

(µA)

(pF)

(1)

(2)

(3)

−1

−2

100

200

T ( C)

(V)

(1) V_R= 60 V; maximum values.

(2) V_R= 60 V; typical values.

(3) V_R= 30 V; typical values.

f = 1 MHz; T_j= 25 °C.

Fig.5 Reverse current as a function of junction

temperature.

Fig.6 Diode capacitance as a function of reverse

voltage; typical values.

1996 Sep 16

Philips Semiconductors

Product speciﬁcation

High-speed diode

BAV10

handbook, full pagewidth

D.U.T.

10%

= 50 Ω

SAMPLING

OSCILLOSCOPE

R = 50 Ω

V = V

I x R

F S

(1)

90%

MGA881

input signal

output signal

(1) I_R= 40 mA.

Fig.7 Reverse recovery voltage test circuit and waveforms.

1 kΩ

450 Ω

90%

= 50 Ω

OSCILLOSCOPE

D.U.T.

R = 50 Ω

10%

MGA882

input

signal

output

signal

Input signal: forward pulse duration t_p= 300 ns; duty factor δ = 0.01.

Fig.8 Forward recovery voltage test circuit and waveforms.

1996 Sep 16

Philips Semiconductors

Product speciﬁcation

High-speed diode

BAV10

PACKAGE OUTLINE

handbook, full pagewidth

0.56

max

1.85

max

4.25

max

MLA428 - 1

25.4 min

Dimensions in mm.

Fig.9 SOD27 (DO-35).

DEFINITIONS

Data Sheet Status

Objective speciﬁcation

Preliminary speciﬁcation

Product speciﬁcation

This data sheet contains target or goal speciﬁcations for product development.

This data sheet contains preliminary data; supplementary data may be published later.

This data sheet contains ﬁnal product speciﬁcations.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or

more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation

of the device at these or at any other conditions above those given in the Characteristics sections of the speciﬁcation

is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the speciﬁcation.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these

products can reasonably be expected to result in personal injury. Philips customers using or selling these products for

use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such

improper use or sale.

1996 Sep 16

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