BAV101 [NXP]

General purpose diodes; 通用二极管


型号：	BAV101
厂家：	NXP
描述：	General purpose diodes 通用二极管二极管
文件：	总8页 (文件大小：39K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

DISCRETE SEMICONDUCTORS

DATA SHEET

1/3 page (Datasheet)

M3D054

BAV100 to BAV103

General purpose diodes

1996 Sep 17

Product speciﬁcation

Supersedes data of April 1996

Philips Semiconductors

Product speciﬁcation

General purpose diodes

BAV100 to BAV103

FEATURES

DESCRIPTION

• Small hermetically sealed glass

SMD package

The BAV100 to BAV103 are switching diodes fabricated in planar technology,

and encapsulated in small hermetically sealed glass SOD80C SMD packages.

• Switching speed: max. 50 ns

• General application

• Continuous reverse voltage:

max. 50 V, 100 V, 150 V and 200 V

respectively

handbook, 4 columns

• Repetitive peak reverse voltage:

max. 60 V, 120 V, 200 V and 250 V

respectively

MAM061

• Repetitive peak forward current:

max. 625 mA.

APPLICATIONS

• Switching in industrial equipment

e.g. oscilloscopes, digital

Cathode indicated by green band.

voltmeters and video output stages

in colour television.

Fig.1 Simplified outline (SOD80C) and symbol.

1996 Sep 17

Philips Semiconductors

Product speciﬁcation

General purpose diodes

BAV100 to BAV103

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

V_RRM

repetitive peak reverse voltage

BAV100

−

120

200

250

BAV101

BAV102

BAV103

V_R

continuous reverse voltage

BAV100

−

100

150

200

250

625

BAV101

BAV102

BAV103

I_F

continuous forward current

repetitive peak forward current

see Fig.2; note 1

I_FRM

I_FSM

non-repetitive peak forward current square wave; T_j= 25 °C prior to

surge; see Fig.4

t = 1 µs

t = 100 µs

t = 1 s

−

P_tot

T_stg

T_j

total power dissipation

storage temperature

junction temperature

T_amb= 25 °C; note 1

−

400

+175

175

°C

−65

−

Note

1. Device mounted on an FR4 printed-circuit board.

1996 Sep 17

Philips Semiconductors

Product speciﬁcation

General purpose diodes

BAV100 to BAV103

ELECTRICAL CHARACTERISTICS

T_j= 25 °C; unless otherwise speciﬁed.

SYMBOL

PARAMETER

forward voltage

CONDITIONS

MIN.

MAX.

UNIT

V_F

see Fig.3

I_F= 100 mA

−

1.0

I_F= 200 mA

1.25

I_R

reverse current

BAV100

see Fig.5

V_R= 50 V

−

100

µA

V_R= 50 V; T_j= 150 °C

V_R= 100 V

BAV101

BAV102

BAV103

V_R= 100 V; T_j= 150 °C

V_R= 150 V

V_R= 150 V; T_j= 150 °C

V_R= 200 V

V_R= 200 V; T_j= 150 °C

f = 1 MHz; V_R= 0; see Fig.6

C_d

t_rr

diode capacitance

reverse recovery time

when switched from I_F= 30 mA to

I_R= 30 mA; R_L= 100 Ω;

measured at I_R= 3 mA; see Fig.8

THERMAL CHARACTERISTICS

SYMBOL

R_{th j-tp}

PARAMETER

thermal resistance from junction to tie-point

thermal resistance from junction to ambient note 1

CONDITIONS

VALUE

UNIT

300

375

K/W

R_{th j-a}

Note

1. Device mounted on an FR4 printed-circuit board.

1996 Sep 17

Philips Semiconductors

Product speciﬁcation

General purpose diodes

BAV100 to BAV103

GRAPHICAL DATA

MBG459

MBH278

600

300

handbook, halfpage

(mA)

400

200

(1)

(2)

(3)

200

100

(V)

100

200

( C)

amb

(1) T_j= 150 °C; typical values.

(2) T_j= 25 °C; typical values.

Device mounted on an FR4 printed-circuit board.

(3) T_j= 25 °C; maximum values.

Fig.2 Maximum permissible continuous forward

current as a function of ambient

temperature.

Fig.3 Forward current as a function of forward

voltage.

MBG703

handbook, full pagewidth

FSM

(A)

−1

(µs)

Based on square wave currents.

T_j= 25 °C prior to surge.

Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.

1996 Sep 17

Philips Semiconductors

Product speciﬁcation

General purpose diodes

BAV100 to BAV103

MGD009

MGD005

1.6

handbook, halfpage

(µA)

(pF)

1.4

1.2

1.0

−1

−2

0.8

100

200

T ( C)

(V)

V_R= V_Rmax

Solid line; maximum values.

Dotted line; typical values.

f = 1 MHz; T_j= 25 °C.

Fig.5 Reverse current as a function of junction

temperature.

Fig.6 Diode capacitance as a function of reverse

voltage; typical values.

MBG700

300

handbook, halfpage

(V)

(1)

200

(2)

(3)

100

(4)

100

200

( C)

amb

(1) BAV103.

(2) BAV102.

(3) BAV101.

(4) BAV100.

Fig.7 Maximum permissible continuous reverse

voltage as a function of ambient

temperature.

1996 Sep 17

Philips Semiconductors

Product speciﬁcation

General purpose diodes

BAV100 to BAV103

handbook, full pagewidth

D.U.T.

10%

= 50 Ω

SAMPLING

OSCILLOSCOPE

R = 50 Ω

V = V

I x R

F S

(1)

90%

MGA881

input signal

output signal

(1) I_R= 1 mA.

Fig.8 Reverse recovery voltage test circuit and waveforms.

1996 Sep 17

Philips Semiconductors

Product speciﬁcation

General purpose diodes

BAV100 to BAV103

PACKAGE OUTLINE

handbook, full pagewidth

1.60

1.45

0.3

3.7

3.3

MBA390 - 2

Dimensions in mm.

Fig.9 SOD80C.

DEFINITIONS

Data Sheet Status

Objective speciﬁcation

Preliminary speciﬁcation

Product speciﬁcation

This data sheet contains target or goal speciﬁcations for product development.

This data sheet contains preliminary data; supplementary data may be published later.

This data sheet contains ﬁnal product speciﬁcations.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or

more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation

of the device at these or at any other conditions above those given in the Characteristics sections of the speciﬁcation

is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the speciﬁcation.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these

products can reasonably be expected to result in personal injury. Philips customers using or selling these products for

use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such

improper use or sale.

1996 Sep 17

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