BAV23S/T4 [NXP]
DIODE 0.225 A, 250 V, 2 ELEMENT, SILICON, SIGNAL DIODE, TO-236AB, PLASTIC PACKAGE-3, Signal Diode;
| 型号： | BAV23S/T4 |
| 厂家： | 
NXP |
| 描述： | DIODE 0.225 A, 250 V, 2 ELEMENT, SILICON, SIGNAL DIODE, TO-236AB, PLASTIC PACKAGE-3, Signal Diode 光电二极管 |
| 文件： | 总13页 (文件大小：281K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BAV23 series
Dual high-voltage switching diodes
Rev. 07 — 19 March 2010
Product data sheet
1. Product profile
1.1 General description
Dual high-voltage switching diodes, encapsulated in small Surface-Mounted
Device (SMD) plastic packages.
Table 1.
Product overview
Type number
Package
NXP
Configuration
JEDEC
TO-236AB
TO-236AB
TO-236AB
-
BAV23A
BAV23C
BAV23S
BAV23
SOT23
SOT23
SOT23
SOT143B
dual common anode
dual common cathode
dual series
dual isolated
1.2 Features and benefits
High switching speed: trr 50 ns
Low leakage current
Low capacitance: Cd 2 pF
Small SMD plastic package
Repetitive peak reverse voltage:
VRRM 250 V
1.3 Applications
High-speed switching at high voltage
High-voltage general-purpose switching
1.4 Quick reference data
Table 2.
Symbol
Per diode
IR
Quick reference data
Parameter
Conditions
Min
Typ
Max
Unit
reverse current
VR = 200 V
-
-
-
-
-
-
100
200
50
nA
V
VR
reverse voltage
[1]
trr
reverse recovery time
ns
[1] When switched from IF = 10 mA to IR = 10 mA; RL = 100 ; measured at IR = 1 mA.
BAV23 series
NXP Semiconductors
Dual high-voltage switching diodes
2. Pinning information
Table 3.
Pinning
Pin
Description
Simplified outline
Graphic symbol
BAV23A
1
2
3
cathode (diode 1)
cathode (diode 2)
common anode
3
3
1
1
1
2
2
2
1
2
006aab099
BAV23C
1
2
3
anode (diode 1)
anode (diode 2)
common cathode
3
3
1
2
006aab034
BAV23S
1
2
3
anode (diode 1)
3
3
cathode (diode 2)
cathode (diode 1),
anode (diode 2)
1
4
2
006aaa763
BAV23
1
2
3
4
cathode (diode 1)
cathode (diode 2)
anode (diode 2)
anode (diode 1)
4
3
2
3
1
1
2
006aab100
BAV23_SER_7
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 07 — 19 March 2010
2 of 13
BAV23 series
NXP Semiconductors
Dual high-voltage switching diodes
3. Ordering information
Table 4.
Ordering information
Type number
Package
Name
-
Description
Version
BAV23A
BAV23C
BAV23S
BAV23
plastic surface-mounted package; 3 leads
plastic surface-mounted package; 4 leads
SOT23
-
SOT143B
4. Marking
Table 5.
Marking codes
Type number
BAV23A
Marking code[1]
*V0
*V9
*V5
*L3
BAV23C
BAV23S
BAV23
[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
5. Limiting values
Table 6.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Per diode
VRRM
Parameter
Conditions
Min
Max
Unit
repetitive peak reverse
voltage
-
250
V
VR
IF
reverse voltage
forward current
-
-
-
-
200
225
125
625
V
[1]
[2]
mA
mA
mA
IFRM
IFSM
repetitive peak forward
current
[3]
non-repetitive peak forward square wave
current
tp = 1 s
-
-
-
9
A
A
A
tp = 100 s
3
tp = 10 ms
1.7
BAV23_SER_7
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 07 — 19 March 2010
3 of 13
BAV23 series
NXP Semiconductors
Dual high-voltage switching diodes
Table 6.
Limiting values …continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Per device
Ptot
Parameter
Conditions
Min
Max
Unit
[4]
total power dissipation
junction temperature
ambient temperature
storage temperature
Tamb 25 C
-
250
mW
C
Tj
-
150
Tamb
65
65
+150
+150
C
Tstg
C
[1] Single diode loaded.
[2] Double diode loaded.
[3] Tj = 25 C prior to surge.
[4] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
6. Thermal characteristics
Table 7.
Thermal characteristics
Symbol
Per device
Rth(j-a)
Parameter
Conditions
Min
Typ
Max Unit
[1]
thermal resistance from
junction to ambient
in free air
-
-
-
-
500
360
K/W
K/W
Rth(j-sp)
thermal resistance from
junction to solder point
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
7. Characteristics
Table 8.
Characteristics
Tamb = 25 C unless otherwise specified.
Symbol Parameter
Per diode
Conditions
Min
Typ
Max Unit
VF
forward voltage
IF = 100 mA
-
-
-
-
-
-
-
-
-
-
-
-
1.0
1.25
100
100
2
V
IF = 200 mA
V
IR
reverse current
VR = 200 V
nA
A
pF
ns
VR = 200 V; Tj = 150 C
f = 1 MHz; VR = 0 V
Cd
trr
diode capacitance
[1]
reverse recovery time
50
[1] When switched from IF = 10 mA to IR = 10 mA; RL = 100 ; measured at IR = 1 mA.
BAV23_SER_7
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 07 — 19 March 2010
4 of 13
BAV23 series
NXP Semiconductors
Dual high-voltage switching diodes
mbg703
006aab212
2
10
600
I
FSM
(A)
I
F
(mA)
10
400
(2)
(3)
(4)
1
200
(1)
−1
10
0
2
3
4
1
10
10
10
10
0
0.4
0.8
1.2
1.6
t
(μs)
V
(V)
p
F
(1) Tamb = 150 C
(2) Tamb = 85 C
(3) Tamb = 25 C
Based on square wave currents.
Tj = 25 C; prior to surge
(4)
Tamb = 40 C
Fig 1. Forward current as a function of forward
voltage; typical values
Fig 2. Non-repetitive peak forward current as a
function of pulse duration; maximum values
006aab213
2
10
R
(μA)
(1)
(2)
I
10
1
−1
10
10
10
10
10
(3)
−2
−3
−4
−5
(4)
0
50
100
150
200
250
(V)
V
R
(1) Tamb = 150 C
(2) Tamb = 85 C
(3)
Tamb = 25 C
(4) Tamb = 40 C
Fig 3. Reverse current as a function of reverse voltage; typical values
BAV23_SER_7
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 07 — 19 March 2010
5 of 13
BAV23 series
NXP Semiconductors
Dual high-voltage switching diodes
mbg447
006aab214
300
1.0
C
d
I
F
(pF)
(1)
(2)
(mA)
0.8
200
0.6
100
0.4
0.2
0
0
2
4
6
8
0
50
100
150
200
(°C)
V
R
(V)
T
amb
f = 1 MHz; Tamb = 25 C
FR4 PCB, standard footprint
(1) Single diode loaded.
(2) Double diode loaded.
Fig 4. Diode capacitance as a function of reverse
voltage; typical values
Fig 5. Forward current as a function of ambient
temperature; derating curves
8. Test information
t
t
p
r
t
D.U.T.
10 %
I
+ I
F
F
t
rr
R
S
= 50 Ω
SAMPLING
OSCILLOSCOPE
t
R
i
= 50 Ω
V = V + I × R
S
R
F
(1)
90 %
V
R
mga881
input signal
output signal
(1) IR = 1 mA
Fig 6. Reverse recovery time test circuit and waveforms
BAV23_SER_7
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 07 — 19 March 2010
6 of 13
BAV23 series
NXP Semiconductors
Dual high-voltage switching diodes
9. Package outline
3.0
3.0
2.8
1.1
0.9
2.8
1.1
0.9
1.9
3
4
3
0.45
0.15
0.45
0.15
2.5 1.4
2.1 1.2
2.5
2.1
1.4
1.2
1
2
1
2
0.88
0.78
0.48
0.38
0.15
0.09
0.48
0.38
0.15
0.09
1.9
1.7
Dimensions in mm
04-11-04
Dimensions in mm
04-11-16
Fig 7. Package outline SOT23 (TO-236AB)
Fig 8. Package outline SOT143B
10. Packing information
Table 9.
Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.[1]
Type number
Package
Description
Packing quantity
3000
10000
BAV23A
BAV23C
BAV23S
BAV23
SOT23
4 mm pitch, 8 mm tape and reel
-215
-235
SOT143B
4 mm pitch, 8 mm tape and reel
-215
-235
[1] For further information and the availability of packing methods, see Section 14.
BAV23_SER_7
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 07 — 19 March 2010
7 of 13
BAV23 series
NXP Semiconductors
Dual high-voltage switching diodes
11. Soldering
3.3
2.9
1.9
solder lands
solder resist
2
3
1.7
solder paste
occupied area
0.6
0.7
(3×)
(3×)
Dimensions in mm
0.5
(3×)
0.6
(3×)
1
sot023_fr
Fig 9. Reflow soldering footprint SOT23 (TO-236AB)
2.2
1.2
(2×)
1.4
(2×)
solder lands
solder resist
occupied area
2.6
4.6
Dimensions in mm
1.4
preferred transport direction during soldering
2.8
4.5
sot023_fw
Fig 10. Wave soldering footprint SOT23 (TO-236AB)
BAV23_SER_7
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 07 — 19 March 2010
8 of 13
BAV23 series
NXP Semiconductors
Dual high-voltage switching diodes
3.25
1.9
0.6
(3×)
0.5
(3×)
solder lands
solder resist
0.7 0.6
(3×) (3×)
2
solder paste
occupied area
3
0.7 0.6
Dimensions in mm
0.75
0.95
0.9
1
sot143b_fr
Fig 11. Reflow soldering footprint SOT143B
4.45
2.2
1.2
(3×)
1.425
(3×)
solder lands
solder resist
occupied area
2.575
4.6
Dimensions in mm
1.425
preferred transport direction during soldering
1
1.2
sot143b_fw
Fig 12. Wave soldering footprint SOT143B
BAV23_SER_7
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 07 — 19 March 2010
9 of 13
BAV23 series
NXP Semiconductors
Dual high-voltage switching diodes
12. Revision history
Table 10. Revision history
Document ID
BAV23_SER_7
Modifications:
Release date
20100319
Data sheet status
Change notice
Supersedes
Product data sheet
-
BAV23_SER_6
• Type numbers BAV23A/DG, BAV23C/DG, BAV23S/DG and BAV23/DG deleted
• Type numbers BAV23A and BAV23C added
• Table 5 “Marking codes”: updated
• Figure 6: adaptation of test condition to specified characteristics in Table 8
• Figure 9, 10, 11 and 12: updated
• Section 13 “Legal information”: updated
BAV23_SER_6
20080303
Product data sheet
-
BAV23S_5
BAV23_2
BAV23S_5
BAV23_2
20011012
19960917
Product specification
Product specification
-
-
BAV23S_4
BAV23_1
BAV23_SER_7
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 07 — 19 March 2010
10 of 13
BAV23 series
NXP Semiconductors
Dual high-voltage switching diodes
13. Legal information
13.1 Data sheet status
Document status[1][2]
Product status[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
malfunction of an NXP Semiconductors product can reasonably be expected
13.2 Definitions
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on a weakness or default in the
customer application/use or the application/use of customer’s third party
customer(s) (hereinafter both referred to as “Application”). It is customer’s
sole responsibility to check whether the NXP Semiconductors product is
suitable and fit for the Application planned. Customer has to do all necessary
testing for the Application in order to avoid a default of the Application and the
product. NXP Semiconductors does not accept any liability in this respect.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
13.3 Disclaimers
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from national authorities.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
13.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
BAV23_SER_7
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 07 — 19 March 2010
11 of 13
BAV23 series
NXP Semiconductors
Dual high-voltage switching diodes
14. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
BAV23_SER_7
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 07 — 19 March 2010
12 of 13
BAV23 series
NXP Semiconductors
Dual high-voltage switching diodes
15. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1
1.2
1.3
1.4
General description . . . . . . . . . . . . . . . . . . . . . 1
Features and benefits. . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data . . . . . . . . . . . . . . . . . . . . 1
2
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
Ordering information. . . . . . . . . . . . . . . . . . . . . 3
Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . 4
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 4
Test information. . . . . . . . . . . . . . . . . . . . . . . . . 6
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 7
Packing information . . . . . . . . . . . . . . . . . . . . . 7
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 10
3
4
5
6
7
8
9
10
11
12
13
Legal information. . . . . . . . . . . . . . . . . . . . . . . 11
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 11
13.1
13.2
13.3
13.4
14
15
Contact information. . . . . . . . . . . . . . . . . . . . . 12
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2010.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 19 March 2010
Document identifier: BAV23_SER_7
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