BAV70S,135 [NXP]
BAV70 series - High-speed switching diodes TSSOP 6-Pin;
| 型号： | BAV70S,135 |
| 厂家： | 
NXP |
| 描述： | BAV70 series - High-speed switching diodes TSSOP 6-Pin |
| 文件： | 总15页 (文件大小：96K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BAV70 series
High-speed switching diodes
Rev. 07 — 27 November 2007
Product data sheet
1. Product profile
1.1 General description
High-speed switching diodes, encapsulated in small Surface-Mounted Device (SMD)
plastic packages.
Table 1.
Product overview
Type number Package
NXP
Package
configuration
Configuration
JEITA
-
JEDEC
BAV70
SOT23
TO-236AB small
dual common cathode
dual common cathode
BAV70M
SOT883
SC-101
-
leadless ultra
small
BAV70S
SOT363
SC-88
-
very small
quadruple common
cathode/common cathode
BAV70T
BAV70W
SOT416
SOT323
SC-75
SC-70
-
-
ultra small
very small
dual common cathode
dual common cathode
1.2 Features
I High switching speed: trr ≤ 4 ns
I Low leakage current
I Low capacitance: Cd ≤ 1.5 pF
I Reverse voltage: VR ≤ 100 V
I Small SMD plastic packages
1.3 Applications
I High-speed switching
I General-purpose switching
1.4 Quick reference data
Table 2.
Symbol
Per diode
IR
Quick reference data
Parameter
Conditions
Min
Typ
Max
Unit
reverse current
VR = 80 V
-
-
-
-
-
-
0.5
100
4
µA
V
VR
reverse voltage
[1]
trr
reverse recovery time
ns
[1] When switched from IF = 10 mA to IR = 10 mA; RL = 100 Ω; measured at IR = 1 mA.
BAV70 series
NXP Semiconductors
High-speed switching diodes
2. Pinning information
Table 3.
Pin
Pinning
Description
Simplified outline
Symbol
BAV70; BAV70T; BAV70W
1
2
3
anode (diode 1)
anode (diode 2)
common cathode
3
3
1
2
006aab034
1
2
006aaa144
BAV70M
1
2
3
anode (diode 1)
anode (diode 2)
common cathode
3
1
2
3
1
2
006aab034
Transparent
top view
BAV70S
1
2
3
anode (diode 1)
anode (diode 2)
6
1
5
2
4
3
6
5
2
4
common cathode (diode 3
and diode 4)
4
5
6
anode (diode 3)
anode (diode 4)
1
3
006aab104
common cathode (diode 1
and diode 2)
3. Ordering information
Table 4.
Ordering information
Type number
Package
Name
-
Description
plastic surface-mounted package; 3 leads
Version
SOT23
BAV70
BAV70M
SC-101
leadless ultra small plastic package; 3 solder lands;
SOT883
body 1.0 × 0.6 × 0.5 mm
BAV70S
BAV70T
BAV70W
SC-88
SC-75
SC-70
plastic surface-mounted package; 6 leads
plastic surface-mounted package; 3 leads
plastic surface-mounted package; 3 leads
SOT363
SOT416
SOT323
BAV70_SER_7
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 07 — 27 November 2007
2 of 15
BAV70 series
NXP Semiconductors
High-speed switching diodes
4. Marking
Table 5.
Marking codes
Type number
BAV70
Marking code[1]
A4*
S4
BAV70M
BAV70S
BAV70T
A4*
A4
BAV70W
A4*
[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
5. Limiting values
Table 6.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Per diode
VRRM
Parameter
Conditions
Min
Max
Unit
repetitive peak reverse
voltage
-
-
100
100
V
V
VR
IF
reverse voltage
forward current
BAV70
T
amb ≤ 25 °C
-
-
-
-
-
215
150
250
150
175
mA
mA
mA
mA
mA
BAV70M
Ts = 90 °C
Ts = 60 °C
Ts = 90 °C
BAV70S
BAV70T
BAV70W
Tamb ≤ 25 °C
IFRM
repetitive peak forward
current
BAV70
-
-
-
-
-
450
500
450
500
500
mA
mA
mA
mA
mA
BAV70M
BAV70S
BAV70T
BAV70W
[1]
IFSM
non-repetitive peak forward square wave
current
tp = 1 µs
-
-
-
4
A
A
A
tp = 1 ms
tp = 1 s
1
0.5
BAV70_SER_7
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 07 — 27 November 2007
3 of 15
BAV70 series
NXP Semiconductors
High-speed switching diodes
Table 6.
Limiting values …continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
total power dissipation
BAV70
Conditions
Min
Max
Unit
[2]
[3]
Ptot
T
amb ≤ 25 °C
amb ≤ 25 °C
-
-
-
-
-
250
250
350
170
200
mW
mW
mW
mW
mW
BAV70M
T
BAV70S
Ts = 60 °C
Ts = 90 °C
BAV70T
BAV70W
T
amb ≤ 25 °C
Per device
IF
forward current
BAV70
T
amb ≤ 25 °C
-
125
75
mA
mA
mA
mA
mA
°C
BAV70M
Ts = 90 °C
Ts = 60 °C
Ts = 90 °C
-
BAV70S
-
100
75
BAV70T
-
BAV70W
T
amb ≤ 25 °C
-
100
150
+150
+150
Tj
junction temperature
ambient temperature
storage temperature
-
Tamb
Tstg
−65
−65
°C
°C
[1] Tj = 25 °C prior to surge.
[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[3] Reflow soldering is the only recommended soldering method.
6. Thermal characteristics
Table 7.
Thermal characteristics
Symbol
Per diode
Rth(j-a)
Parameter
Conditions
Min
Typ
Max Unit
[1]
[2]
thermal resistance from
junction to ambient
in free air
BAV70
-
-
-
-
-
-
500
500
625
K/W
K/W
K/W
BAV70M
BAV70W
Rth(j-t)
thermal resistance from
junction to tie-point
BAV70
-
-
-
-
360
300
K/W
K/W
BAV70W
Rth(j-sp)
thermal resistance from
junction to solder point
BAV70S
BAV70T
-
-
-
-
255
350
K/W
K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Reflow soldering is the only recommended soldering method.
BAV70_SER_7
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 07 — 27 November 2007
4 of 15
BAV70 series
NXP Semiconductors
High-speed switching diodes
7. Characteristics
Table 8.
Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol
Per diode
VF
Parameter
Conditions
Min
Typ
Max Unit
[1]
forward voltage
IF = 1 mA
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
715
855
1
mV
mV
V
IF = 10 mA
IF = 50 mA
IF = 150 mA
1.25
30
V
IR
reverse current
VR = 25 V
nA
µA
µA
µA
pF
ns
V
VR = 80 V
0.5
30
VR = 25 V; Tj = 150 °C
VR = 80 V; Tj = 150 °C
VR = 0 V; f = 1 MHz
100
1.5
4
Cd
trr
diode capacitance
[2]
[3]
reverse recovery time
forward recovery voltage
VFR
1.75
[1] Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
[2] When switched from IF = 10 mA to IR = 10 mA; RL = 100 Ω; measured at IR = 1 mA.
[3] When switched from IF = 10 mA; tr = 20 ns.
BAV70_SER_7
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 07 — 27 November 2007
5 of 15
BAV70 series
NXP Semiconductors
High-speed switching diodes
mbg704
006aab107
2
3
10
10
I
F
I
FSM
(A)
(mA)
2
10
10
10
1
(1)
(2) (3)
(4)
1
−1
−1
10
10
2
3
4
1
10
10
10
10
0.2
0.6
1.0
1.4
t
(µs)
V
(V)
p
F
(1) Tamb = 150 °C
(2) Tamb = 85 °C
(3) Tamb = 25 °C
(4) Tamb = −40 °C
Based on square wave currents.
Tj = 25 °C; prior to surge
Fig 1. Forward current as a function of forward
voltage; typical values
Fig 2. Non-repetitive peak forward current as a
function of pulse duration; maximum values
mbg446
006aab108
2
10
0.8
I
R
(1)
(2)
C
(pF
d
(µA)
10
)
0.6
1
−1
10
10
10
10
10
0.4
(3)
(4)
−2
−3
−4
−5
0.2
0
0
4
8
12
16
0
20
40
60
80
100
V
(V)
R
V
(V)
R
(1) Tamb = 150 °C
(2) Tamb = 85 °C
(3) Tamb = 25 °C
(4) Tamb = −40 °C
f = 1 MHz; Tamb = 25 °C
Fig 3. Reverse current as a function of reverse
voltage; typical values
Fig 4. Diode capacitance as a function of reverse
voltage; typical values
BAV70_SER_7
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 07 — 27 November 2007
6 of 15
BAV70 series
NXP Semiconductors
High-speed switching diodes
8. Test information
t
t
p
r
t
D.U.T.
10 %
I
+ I
F
t
F
rr
R
S
= 50 Ω
SAMPLING
OSCILLOSCOPE
t
R
i
= 50 Ω
V = V + I × R
S
R
F
(1)
90 %
V
R
mga881
input signal
output signal
(1) IR = 1 mA
Input signal: reverse pulse rise time tr = 0.6 ns; reverse voltage pulse duration tp = 100 ns; duty cycle δ = 0.05
Oscilloscope: rise time tr = 0.35 ns
Fig 5. Reverse recovery time test circuit and waveforms
I
1 kΩ
450 Ω
I
V
90 %
R
S
= 50 Ω
OSCILLOSCOPE
= 50 Ω
V
FR
D.U.T.
R
i
10 %
t
t
t
t
p
r
input signal
output signal
mga882
Input signal: forward pulse rise time tr = 20 ns; forward current pulse duration tp ≥ 100 ns; duty cycle δ ≤ 0.005
Fig 6. Forward recovery voltage test circuit and waveforms
BAV70_SER_7
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 07 — 27 November 2007
7 of 15
BAV70 series
NXP Semiconductors
High-speed switching diodes
9. Package outline
0.62
0.55
0.55
0.47
3.0
2.8
1.1
0.9
0.50
0.46
3
3
0.30
0.22
0.45
0.15
2.5 1.4
2.1 1.2
1.02
0.95
0.65
0.30
0.22
2
1
1
2
0.48
0.38
0.15
0.09
0.20
0.12
1.9
0.35
Dimensions in mm
04-11-04
Dimensions in mm
03-04-03
Fig 7. Package outline BAV70 (SOT23/TO-236AB)
Fig 8. Package outline BAV70M (SOT883/SC-101)
2.2
1.8
1.1
0.8
1.8
1.4
0.95
0.60
0.45
0.15
6
5
4
3
0.45
0.15
2.2 1.35
2.0 1.15
1.75 0.9
1.45 0.7
pin 1
index
1
2
3
1
2
0.25
0.10
0.3
0.2
0.30
0.15
0.25
0.10
0.65
1.3
1
Dimensions in mm
06-03-16
Dimensions in mm
04-11-04
Fig 9. Package outline BAV70S (SOT363/SC-88)
Fig 10. Package outline BAV70T (SOT416/SC-75)
2.2
1.8
1.1
0.8
0.45
0.15
3
2.2 1.35
2.0 1.15
1
2
0.4
0.3
0.25
0.10
1.3
Dimensions in mm
04-11-04
Fig 11. Package outline BAV70W (SOT323/SC-70)
BAV70_SER_7
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 07 — 27 November 2007
8 of 15
BAV70 series
NXP Semiconductors
High-speed switching diodes
10. Packing information
Table 9.
Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.[1]
Type number Package
Description
Packing quantity
3000
-215
-
10000
-235
-315
-135
-165
-135
-135
BAV70
SOT23
4 mm pitch, 8 mm tape and reel
2 mm pitch, 8 mm tape and reel
4 mm pitch, 8 mm tape and reel; T1
4 mm pitch, 8 mm tape and reel; T2
4 mm pitch, 8 mm tape and reel
4 mm pitch, 8 mm tape and reel
BAV70M
BAV70S
SOT883
SOT363
[2]
[3]
-115
-125
-115
-115
BAV70T
BAV70W
SOT416
SOT323
[1] For further information and the availability of packing methods, see Section 14.
[2] T1: normal taping
[3] T2: reverse taping
11. Soldering
2.90
2.50
2
1
0.85
0.85
solder lands
solder resist
3.00
1.30
2.70
solder paste
3
occupied area
Dimensions in mm
0.60
(3x)
0.50 (3x)
0.60 (3x)
1.00
3.30
sot023
Fig 12. Reflow soldering footprint BAV70 (SOT23/TO-236AB)
BAV70_SER_7
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 07 — 27 November 2007
9 of 15
BAV70 series
NXP Semiconductors
High-speed switching diodes
3.40
1.20 (2x)
solder lands
solder resist
occupied area
2
1
4.60 4.00 1.20
3
Dimensions in mm
preferred transport direction during soldering
sot023
2.80
4.50
Fig 13. Wave soldering footprint BAV70 (SOT23/TO-236AB)
1.30
R = 0.05 (12×)
0.30
R = 0.05 (12×)
0.35
(2×)
0.90 0.20
0.60 0.70 0.80
0.25
(2×)
0.30
(2×)
0.40
(2×)
0.50
(2×)
0.30
0.40
0.50
solder lands
solder paste
solder resist
occupied area
Dimensions in mm
Reflow soldering is the only recommended soldering method.
Fig 14. Reflow soldering footprint BAV70M (SOT883/SC-101)
BAV70_SER_7
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 07 — 27 November 2007
10 of 15
BAV70 series
NXP Semiconductors
High-speed switching diodes
2.65
0.60
(2×)
0.40
2.35
0.90 2.10
(2×)
solder lands
solder paste
0.50
(4×)
solder resist
0.50
(4×)
occupied area
Dimensions in mm
1.20
2.40
sot363
Fig 15. Reflow soldering footprint BAV70S (SOT363/SC-88)
5.25
0.30 1.00 4.00
4.50
solder lands
1.15
3.75
solder resist
occupied area
transport direction during soldering
Dimensions in mm
sot363
Fig 16. Wave soldering footprint BAV70S (SOT363/SC-88)
BAV70_SER_7
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 07 — 27 November 2007
11 of 15
BAV70 series
NXP Semiconductors
High-speed switching diodes
2.2
0.7
0.6
1.1
2
3
2.0 0.85
1.5
0.5
(3x)
1
0.6
(3x)
msa438
1.9
Dimensions in mm
solder lands
solder resist
solder paste
occupied area
Fig 17. Reflow soldering footprint BAV70T (SOT416/SC-75)
2.65
0.75
1.30
1.325
solder lands
2
solder paste
solder resist
0.50
(3×)
3
0.60
(3×)
2.35 0.85
1.90
occupied area
1
Dimensions in mm
0.55
(3×)
msa429
2.40
Fig 18. Reflow soldering footprint BAV70W (SOT323/SC-70)
4.60
4.00
1.15
2
3
3.65 2.10
2.70
solder lands
0.90
(2×)
solder resist
1
occupied area
Dimensions in mm
msa419
preferred transport direction during soldering
Fig 19. Wave soldering footprint BAV70W (SOT323/SC-70)
BAV70_SER_7
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 07 — 27 November 2007
12 of 15
BAV70 series
NXP Semiconductors
High-speed switching diodes
12. Revision history
Table 10. Revision history
Document ID
Release date
20071127
Data sheet status
Change notice
Supersedes
BAV70_SER_7
Product data sheet
-
BAV70_6
BAV70S_2
BAV70T_3
BAV70W_6
Modifications:
• The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
• Legal texts have been adapted to the new company name where appropriate.
• Type number BAV70M added
• Section 1.1 “General description”: amended
• Table 1 “Product overview”: added
• Table 2 “Quick reference data”: added
• Table 6 “Limiting values”: for BAV70, BAV70S and BAV70W change of VRRM maximum
value from 85 V to 100 V
• Table 6 “Limiting values”: for BAV70, BAV70S and BAV70W change of VR maximum value
from 75 V to 100 V
• Table 8 “Characteristics”: for BAV70, BAV70S, BAV70T and BAV70W change of
IR condition VR from 75 V to 80 V for Tj = 25 °C
• Table 8 “Characteristics”: for BAV70, BAV70S and BAV70W change of IR maximum value
from 2.5 µA to 0.5 µA for Tj = 25 °C
• Table 8 “Characteristics”: for BAV70T change of IR maximum value from 2.0 µA to 0.5 µA
for Tj = 25 °C
• Table 8 “Characteristics”: for BAV70, BAV70S, BAV70T and BAV70W change of
IR maximum value from 60 µA to 30 µA for IR condition VR = 25 V; Tj = 150 °C
• Table 8 “Characteristics”: for BAV70, BAV70S, BAV70T and BAV70W change of
IR condition VR from 75 V to 80 V for Tj = 150 °C
• Section 8 “Test information”: added
• Section 10 “Packing information”: added
• Section 11 “Soldering”: added
• Section 13 “Legal information”: updated
BAV70_6
20020403
19971021
20040204
20020405
Product specification
Product specification
Product specification
Product specification
-
-
-
-
BAV70_5
BAV70S_2
BAV70T_3
BAV70W_6
BAV70S_1
BAV70T_2
BAV70W_5
BAV70_SER_7
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 07 — 27 November 2007
13 of 15
BAV70 series
NXP Semiconductors
High-speed switching diodes
13. Legal information
13.1 Data sheet status
Document status[1][2]
Product status[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
malfunction of an NXP Semiconductors product can reasonably be expected
13.2 Definitions
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
13.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
13.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
14. Contact information
For additional information, please visit: http://www.nxp.com
For sales office addresses, send an email to: salesaddresses@nxp.com
BAV70_SER_7
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 07 — 27 November 2007
14 of 15
BAV70 series
NXP Semiconductors
High-speed switching diodes
15. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1
1.2
1.3
1.4
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
2
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
Ordering information. . . . . . . . . . . . . . . . . . . . . 2
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics. . . . . . . . . . . . . . . . . . . 4
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 5
Test information. . . . . . . . . . . . . . . . . . . . . . . . . 7
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8
Packing information. . . . . . . . . . . . . . . . . . . . . . 9
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 13
3
4
5
6
7
8
9
10
11
12
13
Legal information. . . . . . . . . . . . . . . . . . . . . . . 14
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 14
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 14
13.1
13.2
13.3
13.4
14
15
Contact information. . . . . . . . . . . . . . . . . . . . . 14
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2007.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 27 November 2007
Document identifier: BAV70_SER_7
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