BAV74,235 [NXP]
BAV74 - High-speed double diode TO-236 3-Pin;
| 型号： | BAV74,235 |
| 厂家： | 
NXP |
| 描述： | BAV74 - High-speed double diode TO-236 3-Pin 光电二极管 |
| 文件： | 总9页 (文件大小：74K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
BAV74
High-speed double diode
Product data sheet
2004 Jan 14
Supersedes data of 1999 May 11
NXP Semiconductors
Product data sheet
High-speed double diode
BAV74
FEATURES
PINNING
• Small plastic SMD package
PIN
1
DESCRIPTION
• High switching speed: max. 4 ns
anode (a1)
anode (a2)
cathode
• Continuous reverse voltage: max. 50 V
• Repetitive peak reverse voltage: max. 60 V
• Repetitive peak forward current: max. 450 mA.
2
3
APPLICATIONS
umns
2
1
• High-speed switching in thick and thin-film circuits.
DESCRIPTION
2
1
The BAV74 consists of two high-speed switching diodes
with common cathodes, fabricated in planar technology,
and encapsulated in a small SOT23 plastic SMD package.
3
3
MAM108
Top view
MARKING
TYPE NUMBER
BAV74
MARKING CODE(1)
Fig.1 Simplified outline (SOT23) and symbol.
JA*
Note
1. * = p : Made in Hong Kong.
* = t : Made in Malaysia.
* = W: Made in China.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN. MAX. UNIT
Per diode
VRRM
repetitive peak reverse
voltage
−
60
V
VR
IF
continuous reverse voltage
continuous forward current
−
−
−
−
50
V
single diode loaded; note 1; see Fig.2
double diode loaded; note 1; see Fig.2
215
125
450
mA
mA
mA
IFRM
IFSM
repetitive peak forward current
non-repetitive peak forward
current
square wave; Tj = 25 °C prior to surge; see Fig.4
t = 1 µs
−
4
A
t = 1 ms
−
1
A
t = 1 s
−
0.5
250
+150
150
A
Ptot
Tstg
Tj
total power dissipation
storage temperature
junction temperature
Tamb = 25 °C; note 1
−
mW
°C
°C
−65
−
Note
1. Device mounted on an FR4 printed-circuit board.
2004 Jan 14
2
NXP Semiconductors
Product data sheet
High-speed double diode
BAV74
ORDERING INFORMATION
PACKAGE
TYPE NUMBER
NAME
DESCRIPTION
VERSION
BAV74
−
plastic surface mounted package; 3 leads
SOT23
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
Per diode
VF
forward voltage
see Fig.3
IF = 1 mA
715
855
1.0
mV
mV
V
IF = 10 mA
IF = 100 mA
IR
reverse current
see Fig.5
VR = 25 V
30
0.1
30
100
1.5
4
nA
µA
µA
µA
pF
ns
VR = 50 V
VR = 25 V; Tj = 150 °C
VR = 50 V; Tj = 150 °C
f = 1 MHz; VR = 0; see Fig.6
Cd
trr
diode capacitance
reverse recovery time
when switched from IF = 10 mA to
IR = 10 mA; RL = 100 Ω; measured
at IR = 1 mA; see Fig.7
Vfr
forward recovery voltage
when switched from IF = 10 mA;
tr = 20 ns; see Fig.8
1.75
V
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
360
UNIT
K/W
K/W
Rth(j-tp)
Rth(j-a)
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
note 1
500
Note
1. Device mounted on an FR4 printed-circuit board.
2004 Jan 14
3
NXP Semiconductors
Product data sheet
High-speed double diode
BAV74
GRAPHICAL DATA
MBG383
MBD033
300
300
handbook, halfpage
I
I
F
F
(mA)
(mA)
(1)
(2) (3)
200
200
single diode loaded
double diode loaded
100
100
0
0
0
1
2
V
(V)
F
0
100
200
o
T
( C)
amb
(1) Tj = 150 °C; typical values.
(2) Tj = 25 °C; typical values.
Device mounted on an FR4 printed-circuit board.
(3) Tj = 25 °C; maximum values.
Fig.2 Maximum permissible continuous forward
current as a function of ambient
temperature.
Fig.3 Forward current as a function of forward
voltage.
MBG704
2
10
I
FSM
(A)
10
1
−1
10
2
3
4
1
10
10
10
10
t
(µs)
p
Based on square wave currents.
Tj = 25 °C prior to surge.
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
2004 Jan 14
4
NXP Semiconductors
Product data sheet
High-speed double diode
BAV74
MBG376
MBG446
5
10
0.8
handbook, halfpage
handbook, halfpage
C
I
d
R
(pF)
0.6
(nA)
4
10
(1)
(2)
(3)
3
2
10
10
0.4
0.2
0
0
10
o
0
100
4
8
12
16
200
T ( C)
j
V
(V)
R
(1) VR = 50 V; maximum values.
(2) VR = 50 V; typical values.
(3)
V
R = 25 V; typical values.
f = 1 MHz; Tj = 25 °C.
Fig.5 Reverse current as a function of junction
temperature.
Fig.6 Diode capacitance as a function of reverse
voltage; typical values.
2004 Jan 14
5
NXP Semiconductors
Product data sheet
High-speed double diode
BAV74
t
t
p
r
t
D.U.T.
I
10%
I
t
R
= 50 Ω
F
F
rr
S
SAMPLING
t
OSCILLOSCOPE
R = 50 Ω
V = V
I x R
F S
R
i
(1)
90%
V
R
MGA881
input signal
output signal
(1) IR = 1 mA.
Fig.7 Reverse recovery voltage test circuit and waveforms.
I
1 kΩ
450 Ω
I
V
90%
R
= 50 Ω
S
OSCILLOSCOPE
V
fr
D.U.T.
R = 50 Ω
i
10%
MGA882
t
t
t
t
p
r
input
signal
output
signal
Fig.8 Forward recovery voltage test circuit and waveforms.
6
2004 Jan 14
NXP Semiconductors
Product data sheet
High-speed double diode
BAV74
PACKAGE OUTLINE
Plastic surface-mounted package; 3 leads
SOT23
D
B
E
A
X
H
v
M
A
E
3
Q
A
A
1
c
1
2
e
b
w M
B
1
L
p
p
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
1
UNIT
b
c
D
E
e
e
H
L
Q
v
w
A
p
p
1
E
max.
1.1
0.9
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
2.5
2.1
0.45
0.15
0.55
0.45
mm
0.1
1.9
0.95
0.2
0.1
REFERENCES
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
JEDEC
JEITA
04-11-04
06-03-16
SOT23
TO-236AB
2004 Jan 14
7
NXP Semiconductors
Product data sheet
High-speed double diode
BAV74
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Product data sheet
Qualification
Production
This document contains data from the preliminary specification.
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DISCLAIMERS
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
General ⎯ Information in this document is believed to be
accurate and reliable. However, NXP Semiconductors
does not give any representations or warranties,
expressed or implied, as to the accuracy or completeness
of such information and shall have no liability for the
consequences of use of such information.
Terms and conditions of sale ⎯ NXP Semiconductors
products are sold subject to the general terms and
conditions of commercial sale, as published at
http://www.nxp.com/profile/terms, including those
pertaining to warranty, intellectual property rights
infringement and limitation of liability, unless explicitly
otherwise agreed to in writing by NXP Semiconductors. In
case of any inconsistency or conflict between information
in this document and such terms and conditions, the latter
will prevail.
Right to make changes ⎯ NXP Semiconductors
reserves the right to make changes to information
published in this document, including without limitation
specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.
Suitability for use ⎯ NXP Semiconductors products are
not designed, authorized or warranted to be suitable for
use in medical, military, aircraft, space or life support
equipment, nor in applications where failure or malfunction
of an NXP Semiconductors product can reasonably be
expected to result in personal injury, death or severe
property or environmental damage. NXP Semiconductors
accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at
the customer’s own risk.
No offer to sell or license ⎯ Nothing in this document
may be interpreted or construed as an offer to sell products
that is open for acceptance or the grant, conveyance or
implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Export control ⎯ This document as well as the item(s)
described herein may be subject to export control
regulations. Export might require a prior authorization from
national authorities.
Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
2004 Jan 14
8
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimers. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.
Contact information
For additional information please visit: http://www.nxp.com
For sales offices addresses send e-mail to: salesaddresses@nxp.com
© NXP B.V. 2009
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
R76/04/pp9
Date of release: 2004 Jan 14
Document order number: 9397 750 12392
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