BAW101S [NXP]
High voltage double diode; 高压双二极管
| 型号： | BAW101S |
| 厂家： | 
NXP |
| 描述： | High voltage double diode |
| 文件： | 总10页 (文件大小：52K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
BAW101S
High voltage double diode
Product specification
2003 May 13
Philips Semiconductors
Product specification
High voltage double diode
BAW101S
FEATURES
PINNING
PIN
• Small plastic SMD package
DESCRIPTION
• High switching speed: max. 50 ns
• High continuous reverse voltage: 300 V
• Electrically insulated diodes.
1
2
3
4
5
6
anode 1
n.c.
cathode 2
anode 2
n.c.
APPLICATIONS
cathode 1
• High voltage switching
• Automotive
• Communication.
DESCRIPTION
handbook, halfpage
The BAW101S is a high-speed switching diode array with
two separate dice, fabricated in planar technology and
encapsulated in a small SOT363 plastic SMD package.
6
5
4
6
5
2
4
3
MARKING
1
MARKING CODE(1)
1
2
3
TYPE NUMBER
BAW101S
Top view
MBL892
K2
Note
1.
= p: Made in Hong Kong.
= t: Made in Malaysia.
= W: Made in China.
Fig.1 Simplified outline (SOT363) and symbol.
2003 May 13
2
Philips Semiconductors
Product specification
High voltage double diode
BAW101S
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per diode
VR
continuous reverse voltage
repetitive peak reverse voltage
continuous forward current
repetitive peak forward current
−
−
−
−
−
−
−
−
300
V
series connection
600
300
600
250
140
625
4.5
V
VRRM
V
series connection
V
IF
single diode loaded; note 1; see Fig.2
double diode loaded; note 1; see Fig.2
mA
mA
mA
A
IFRM
IFSM
non-repetitive peak forward current square wave; Tj = 25 °C prior to surge;
t = 1 µs
Ptot
Tstg
Tj
total power dissipation
storage temperature
Tamb = 25 °C; note 1
−
350
mW
°C
−65
−
+150
150
junction temperature
°C
Tamb
operating ambient temperature
−65
+150
°C
Note
1. Device mounted on an FR4 printed-circuit board, cathode-lead mounting pad = 1 cm2.
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
Per diode
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VBR(R)
VF
reverse breakdown voltage
forward voltage
IR = 100 µA
300
−
−
V
IF = 100 mA; note 1
VR = 250 V
1.1
150
50
50
V
IR
reverse current
−
nA
µA
ns
VR = 250 V; Tamb = 150 °C
−
trr
reverse recovery time
diode capacitance
when switched from IF = 30 mA to IR = 30 mA;
RL = 100 Ω; measured at IR = 3 mA
−
Cd
VR = 0 V; f = 1 MHz
−
2
pF
Note
1. Pulse test: pulse width = 300 µs; δ = 0.02.
2003 May 13
3
Philips Semiconductors
Product specification
High voltage double diode
BAW101S
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
thermal resistance from junction to soldering point note 1
thermal resistance from junction to ambient note 2
CONDITIONS
VALUE
UNIT
Rth j-s
Rth j-a
255
357
K/W
K/W
Notes
1. One or more diodes loaded.
2. Device mounted on an FR4 printed-circuit board, cathode-lead mounting pad = 1 cm2.
GRAPHICAL DATA
MLE057
MBG384
600
300
handbook, halfpage
handbook, halfpage
I
I
F
F
(mA)
(mA)
(1)
(2)
(3)
400
200
(1)
(2)
200
100
0
0
0
0
1
2
50
100
150
200
(°C)
V
(V)
F
T
amb
(1) Single diode loaded.
(2) Double diode loaded.
Device mounted on an FR4 printed-circuit board.
Cathode-lead mounting pad = 1 cm2.
(1) Tj = 150 °C; typical values.
(2) Tj = 25 °C; typical values.
(3) Tj = 25 °C; maximum values.
Fig.2 Maximum permissible continuous forward
current as a function of ambient
temperature.
Fig.3 Forward current as a function of forward
voltage.
2003 May 13
4
Philips Semiconductors
Product specification
High voltage double diode
BAW101S
MBG703
2
10
I
FSM
(A)
10
1
−1
10
2
3
4
1
10
10
10
10
t
(µs)
p
Based on square wave currents.
Tj = 25 °C prior to surge.
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
MLE058
MLE059
2
10
0.6
handbook, halfpage
handbook, halfpage
I
R
C
d
(pF)
(µA)
10
0.5
(1)
(2)
1
0.4
0.3
−1
10
−2
10
0.2
0
0
50
100
150
200
2
4
6
8
10
T (°C)
V
(V)
j
R
(1) VR = VRMAX: maximum values.
(2) VR = VRMAX: typical values.
f = 1 MHz; Tj = 25 °C.
Fig.5 Reverse current as a function of junction
temperature.
Fig.6 Diode capacitance as a function of reverse
voltage; typical values.
2003 May 13
5
Philips Semiconductors
Product specification
High voltage double diode
BAW101S
MLE060
400
handbook, halfpage
V
R
(V)
300
200
100
0
0
50
100
150
200
(°C)
T
amb
Fig.7 Maximum permissible continuous reverse
voltage as a function of ambient
temperature.
2003 May 13
6
Philips Semiconductors
Product specification
High voltage double diode
BAW101S
PACKAGE OUTLINE
Plastic surface mounted package; 6 leads
SOT363
D
B
E
A
X
y
H
v
M
A
E
6
5
4
Q
pin 1
index
A
A
1
1
2
3
c
e
1
b
p
L
p
w
M B
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
1
UNIT
A
b
c
D
E
e
e
H
L
Q
v
w
y
p
p
1
E
max
0.30
0.20
1.1
0.8
0.25
0.10
2.2
1.8
1.35
1.15
2.2
2.0
0.45
0.15
0.25
0.15
mm
0.1
1.3
0.65
0.2
0.2
0.1
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
97-02-28
SOT363
SC-88
2003 May 13
7
Philips Semiconductors
Product specification
High voltage double diode
BAW101S
DATA SHEET STATUS
DATA SHEET
STATUS(1)
PRODUCT
STATUS(2)(3)
LEVEL
DEFINITION
I
Objective data
Development This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
II
Preliminary data Qualification
This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
III
Product data
Production
This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Relevant changes will
be communicated via a Customer Product/Process Change Notification
(CPCN).
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
DEFINITIONS
DISCLAIMERS
Short-form specification
The data in a short-form
Life support applications
These products are not
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Right to make changes
Philips Semiconductors
reserves the right to make changes in the products -
including circuits, standard cells, and/or software -
described or contained herein in order to improve design
and/or performance. When the product is in full production
(status ‘Production’), relevant changes will be
Application information
Applications that are
communicated via a Customer Product/Process Change
Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these
products, conveys no licence or title under any patent,
copyright, or mask work right to these products, and
makes no representations or warranties that these
products are free from patent, copyright, or mask work
right infringement, unless otherwise specified.
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
2003 May 13
8
Philips Semiconductors
Product specification
High voltage double diode
BAW101S
NOTES
2003 May 13
9
Philips Semiconductors
Product specification
High voltage double diode
BAW101S
NOTES
2003 May 13
10
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