BAW56TT/R [NXP]
0.15A, 90V, 2 ELEMENT, SILICON, SIGNAL DIODE, PLASTIC, SMD, SC-75, 3 PIN;
| 型号： | BAW56TT/R |
| 厂家： | 
NXP |
| 描述： | 0.15A, 90V, 2 ELEMENT, SILICON, SIGNAL DIODE, PLASTIC, SMD, SC-75, 3 PIN |
| 文件： | 总15页 (文件大小：108K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BAV756S; BAW56 series
High-speed switching diodes
Rev. 05 — 26 November 2007
Product data sheet
1. Product profile
1.1 General description
High-speed switching diodes, encapsulated in small Surface-Mounted Device (SMD)
plastic packages.
Table 1.
Product overview
Type number Package
NXP
Package
configuration
Configuration
JEITA
JEDEC
BAV756S
SOT363
SC-88
-
very small
quadruple common
anode/common cathode
BAW56
SOT23
-
TO-236AB small
dual common anode
dual common anode
BAW56M
SOT883
SC-101
-
leadless ultra
small
BAW56S
SOT363
SC-88
-
very small
quadruple common
anode/common anode
BAW56T
BAW56W
SOT416
SOT323
SC-75
SC-70
-
-
ultra small
very small
dual common anode
dual common anode
1.2 Features
I High switching speed: trr ≤ 4 ns
I Low leakage current
I Low capacitance: Cd ≤ 2 pF
I Reverse voltage: VR ≤ 90 V
I Small SMD plastic packages
1.3 Applications
I High-speed switching
I General-purpose switching
1.4 Quick reference data
Table 2.
Symbol
Per diode
IR
Quick reference data
Parameter
Conditions
Min
Typ
Max
Unit
reverse current
VR = 80 V
-
-
-
-
-
-
0.5
90
4
µA
V
VR
reverse voltage
[1]
trr
reverse recovery time
ns
[1] When switched from IF = 10 mA to IR = 10 mA; RL = 100 Ω; measured at IR = 1 mA.
BAV756S; BAW56 series
NXP Semiconductors
High-speed switching diodes
2. Pinning information
Table 3.
Pinning
Pin
Description
Simplified outline
Symbol
BAV756S
1
2
3
anode (diode 1)
6
1
5
2
4
3
6
5
2
4
cathode (diode 2)
common anode (diode 2 and
diode 3)
4
5
6
cathode (diode 3)
anode (diode 4)
1
3
common cathode (diode 1
and diode 4)
006aab103
BAW56; BAW56T; BAW56W
1
2
3
cathode (diode 1)
cathode (diode 2)
common anode
3
3
1
2
006aaa144
1
2
006aab099
BAW56M
1
2
3
cathode (diode 1)
cathode (diode 2)
common anode
3
1
2
3
Transparent
top view
1
6
2
006aab099
BAW56S
1
2
3
cathode (diode 1)
cathode (diode 2)
6
1
5
2
4
3
5
2
4
common anode (diode 3 and
diode 4)
4
5
6
cathode (diode 3)
cathode (diode 4)
1
3
006aab102
common anode (diode 1 and
diode 2)
BAV756S_BAW56_SER_5
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 05 — 26 November 2007
2 of 15
BAV756S; BAW56 series
NXP Semiconductors
High-speed switching diodes
3. Ordering information
Table 4.
Ordering information
Type number
Package
Name
SC-88
-
Description
Version
SOT363
SOT23
BAV756S
BAW56
plastic surface-mounted package; 6 leads
plastic surface-mounted package; 3 leads
BAW56M
SC-101
leadless ultra small plastic package; 3 solder lands;
SOT883
body 1.0 × 0.6 × 0.5 mm
BAW56S
BAW56T
BAW56W
SC-88
SC-75
SC-70
plastic surface-mounted package; 6 leads
plastic surface-mounted package; 3 leads
plastic surface-mounted package; 3 leads
SOT363
SOT416
SOT323
4. Marking
Table 5.
Marking codes
Type number
BAV756S
BAW56
Marking code[1]
A7*
A1*
S5
BAW56M
BAW56S
BAW56T
BAW56W
A1*
A1
A1*
[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
5. Limiting values
Table 6.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Per diode
VRRM
Parameter
Conditions
Min
Max
Unit
repetitive peak reverse
voltage
-
-
90
90
V
V
VR
IF
reverse voltage
forward current
BAV756S
BAW56
Ts = 60 °C
-
-
-
-
-
-
250
215
150
250
150
150
mA
mA
mA
mA
mA
mA
T
T
amb ≤ 25 °C
amb ≤ 25 °C
BAW56M
BAW56S
Ts = 60 °C
Ts = 90 °C
BAW56T
BAW56W
Tamb ≤ 25 °C
BAV756S_BAW56_SER_5
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 05 — 26 November 2007
3 of 15
BAV756S; BAW56 series
NXP Semiconductors
High-speed switching diodes
Table 6.
Limiting values …continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
IFRM
repetitive peak forward
current
-
500
mA
[1]
[2]
IFSM
non-repetitive peak forward square wave
current
tp = 1 µs
-
-
-
4
A
A
A
tp = 1 ms
tp = 1 s
1
0.5
Ptot
total power dissipation
BAV756S
BAW56
Ts = 60 °C
-
-
-
-
-
-
350
250
250
350
170
200
mW
mW
mW
mW
mW
mW
T
T
amb ≤ 25 °C
amb ≤ 25 °C
[3]
[4]
BAW56M
BAW56S
BAW56T
BAW56W
Ts = 60 °C
Ts = 90 °C
T
amb ≤ 25 °C
Per device
IF
forward current
BAV756S
Ts = 60 °C
-
100
125
75
mA
mA
mA
mA
mA
mA
°C
BAW56
T
T
amb ≤ 25 °C
amb ≤ 25 °C
-
BAW56M
-
BAW56S
Ts = 60 °C
Ts = 90 °C
-
100
75
BAW56T
-
BAW56W
T
amb ≤ 25 °C
-
130
150
+150
+150
Tj
junction temperature
ambient temperature
storage temperature
-
Tamb
Tstg
−65
−65
°C
°C
[1] Tj = 25 °C prior to surge.
[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[3] Reflow soldering is the only recommended soldering method.
[4] Single diode loaded.
6. Thermal characteristics
Table 7.
Thermal characteristics
Symbol
Per diode
Rth(j-a)
Parameter
Conditions
Min
Typ
Max Unit
[1]
[2]
thermal resistance from
junction to ambient
in free air
BAW56
-
-
-
-
-
-
500
500
625
K/W
K/W
K/W
BAW56M
BAW56W
BAV756S_BAW56_SER_5
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 05 — 26 November 2007
4 of 15
BAV756S; BAW56 series
NXP Semiconductors
High-speed switching diodes
Table 7.
Thermal characteristics …continued
Symbol
Parameter
Conditions
Min
Typ
Max Unit
Rth(j-sp)
thermal resistance from
junction to solder point
BAV756S
BAW56
-
-
-
-
-
-
-
-
-
-
255
360
255
350
300
K/W
K/W
K/W
K/W
K/W
BAW56S
BAW56T
BAW56W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Reflow soldering is the only recommended soldering method.
7. Characteristics
Table 8.
Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol
Per diode
VF
Parameter
Conditions
Min
Typ
Max Unit
[1]
forward voltage
IF = 1 mA
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
715
855
1
mV
mV
V
IF = 10 mA
IF = 50 mA
IF = 150 mA
1.25
30
V
IR
reverse current
VR = 25 V
nA
µA
µA
µA
pF
ns
V
VR = 80 V
0.5
30
VR = 25 V; Tj = 150 °C
VR = 80 V; Tj = 150 °C
VR = 0 V; f = 1 MHz
150
2
Cd
trr
diode capacitance
[2]
[3]
reverse recovery time
forward recovery voltage
4
VFR
1.75
[1] Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
[2] When switched from IF = 10 mA to IR = 10 mA; RL = 100 Ω; measured at IR = 1 mA.
[3] When switched from IF = 10 mA; tr = 20 ns.
BAV756S_BAW56_SER_5
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 05 — 26 November 2007
5 of 15
BAV756S; BAW56 series
NXP Semiconductors
High-speed switching diodes
mbg704
006aab109
2
3
10
10
I
F
I
FSM
(A)
(mA)
2
10
10
10
1
(1)
(2)
(3)
(4)
1
−1
−1
10
10
2
3
4
1
10
10
10
10
0.2
0.6
1.0
1.4
t
(µs)
V
(V)
p
F
(1) Tamb = 150 °C
(2) Tamb = 85 °C
(3) Tamb = 25 °C
(4) Tamb = −40 °C
Based on square wave currents.
Tj = 25 °C; prior to surge
Fig 1. Forward current as a function of forward
voltage; typical values
Fig 2. Non-repetitive peak forward current as a
function of pulse duration; maximum values
mbh191
006aab110
2
10
2.5
I
R
C
(pF)
d
(1)
(2)
(µA)
10
2.0
1
1.5
1.0
−1
10
10
10
10
10
(3)
−2
−3
−4
−5
0.5
0
(4)
0
5
10
15
20
25
0
20
40
60
80
100
V
(V)
R
V
(V)
R
(1) Tamb = 150 °C
(2) Tamb = 85 °C
(3) Tamb = 25 °C
(4) Tamb = −40 °C
f = 1 MHz; Tamb = 25 °C
Fig 3. Reverse current as a function of reverse
voltage; typical values
Fig 4. Diode capacitance as a function of reverse
voltage; typical values
BAV756S_BAW56_SER_5
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 05 — 26 November 2007
6 of 15
BAV756S; BAW56 series
NXP Semiconductors
High-speed switching diodes
8. Test information
t
t
p
r
t
D.U.T.
10 %
I
+ I
F
t
F
rr
R
S
= 50 Ω
SAMPLING
OSCILLOSCOPE
t
R
i
= 50 Ω
V = V + I × R
S
R
F
(1)
90 %
V
R
mga881
input signal
output signal
(1) IR = 1 mA
Input signal: reverse pulse rise time tr = 0.6 ns; reverse voltage pulse duration tp = 100 ns; duty cycle δ = 0.05
Oscilloscope: rise time tr = 0.35 ns
Fig 5. Reverse recovery time test circuit and waveforms
I
1 kΩ
450 Ω
I
V
90 %
R
S
= 50 Ω
OSCILLOSCOPE
= 50 Ω
V
FR
D.U.T.
R
i
10 %
t
t
t
t
p
r
input signal
output signal
mga882
Input signal: forward pulse rise time tr = 20 ns; forward current pulse duration tp ≥ 100 ns; duty cycle δ ≤ 0.005
Fig 6. Forward recovery voltage test circuit and waveforms
BAV756S_BAW56_SER_5
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 05 — 26 November 2007
7 of 15
BAV756S; BAW56 series
NXP Semiconductors
High-speed switching diodes
9. Package outline
0.62
0.55
0.55
0.47
3.0
2.8
1.1
0.9
0.50
0.46
3
3
0.30
0.22
0.45
0.15
2.5 1.4
2.1 1.2
1.02
0.95
0.65
0.30
0.22
2
1
1
2
0.48
0.38
0.15
0.09
0.20
0.12
1.9
0.35
Dimensions in mm
04-11-04
Dimensions in mm
03-04-03
Fig 7. Package outline BAW56 (SOT23/TO-236AB)
Fig 8. Package outline BAW56M (SOT883/SC-101)
2.2
1.8
1.1
0.8
1.8
1.4
0.95
0.60
0.45
0.15
6
5
4
3
0.45
0.15
2.2 1.35
2.0 1.15
1.75 0.9
1.45 0.7
pin 1
index
1
2
3
1
2
0.25
0.10
0.3
0.2
0.30
0.15
0.25
0.10
0.65
1.3
1
Dimensions in mm
06-03-16
Dimensions in mm
04-11-04
Fig 9. Package outline BAV756S and
BAW56S (SOT363/SC-88)
Fig 10. Package outline BAW56T (SOT416/SC-75)
2.2
1.8
1.1
0.8
0.45
0.15
3
2.2 1.35
2.0 1.15
1
2
0.4
0.3
0.25
0.10
1.3
Dimensions in mm
04-11-04
Fig 11. Package outline BAW56W (SOT323/SC-70)
BAV756S_BAW56_SER_5
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 05 — 26 November 2007
8 of 15
BAV756S; BAW56 series
NXP Semiconductors
High-speed switching diodes
10. Packing information
Table 9.
Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.[1]
Type number Package
Description
Packing quantity
3000
-115
-125
-215
-
10000
-135
-165
-235
-315
-135
-165
-135
-135
[2]
[3]
BAV756S
SOT363
4 mm pitch, 8 mm tape and reel; T1
4 mm pitch, 8 mm tape and reel; T2
4 mm pitch, 8 mm tape and reel
2 mm pitch, 8 mm tape and reel
4 mm pitch, 8 mm tape and reel; T1
4 mm pitch, 8 mm tape and reel; T2
4 mm pitch, 8 mm tape and reel
4 mm pitch, 8 mm tape and reel
BAW56
SOT23
BAW56M
BAW56S
SOT883
SOT363
[2]
[3]
-115
-125
-115
-115
BAW56T
BAW56W
SOT416
SOT323
[1] For further information and the availability of packing methods, see Section 14.
[2] T1: normal taping
[3] T2: reverse taping
11. Soldering
2.90
2.50
2
1
0.85
0.85
solder lands
solder resist
3.00
1.30
2.70
solder paste
3
occupied area
Dimensions in mm
0.60
(3x)
0.50 (3x)
0.60 (3x)
1.00
3.30
sot023
Fig 12. Reflow soldering footprint BAW56 (SOT23/TO-236AB)
BAV756S_BAW56_SER_5
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 05 — 26 November 2007
9 of 15
BAV756S; BAW56 series
NXP Semiconductors
High-speed switching diodes
3.40
1.20 (2x)
solder lands
solder resist
occupied area
2
1
4.60 4.00 1.20
3
Dimensions in mm
preferred transport direction during soldering
2.80
4.50
sot023
Fig 13. Wave soldering footprint BAW56 (SOT23/TO-236AB)
1.30
R = 0.05 (12×)
0.30
R = 0.05 (12×)
0.35
(2×)
0.90 0.20
0.60 0.70 0.80
0.25
(2×)
0.30
(2×)
0.40
(2×)
0.50
(2×)
0.30
0.40
0.50
solder lands
solder paste
solder resist
occupied area
Dimensions in mm
Reflow soldering is the only recommended soldering method.
Fig 14. Reflow soldering footprint BAW56M (SOT883/SC-101)
BAV756S_BAW56_SER_5
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 05 — 26 November 2007
10 of 15
BAV756S; BAW56 series
NXP Semiconductors
High-speed switching diodes
2.65
0.60
(2×)
0.40
2.35
0.90 2.10
(2×)
solder lands
solder paste
0.50
(4×)
solder resist
0.50
(4×)
occupied area
Dimensions in mm
1.20
2.40
sot363
Fig 15. Reflow soldering footprint BAV756S and BAW56S (SOT363/SC-88)
5.25
0.30 1.00 4.00
4.50
solder lands
1.15
3.75
solder resist
occupied area
transport direction during soldering
Dimensions in mm
sot363
Fig 16. Wave soldering footprint BAV756S and BAW56S (SOT363/SC-88)
BAV756S_BAW56_SER_5
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 05 — 26 November 2007
11 of 15
BAV756S; BAW56 series
NXP Semiconductors
High-speed switching diodes
2.2
0.6
1.1
0.7
2
3
2.0 0.85
1.5
0.5
(3x)
1
0.6
(3x)
msa438
1.9
Dimensions in mm
solder lands
solder resist
solder paste
occupied area
Fig 17. Reflow soldering footprint BAW56T (SOT416/SC-75)
2.65
0.75
1.30
1.325
solder lands
2
solder paste
solder resist
0.50
(3×)
3
0.60
(3×)
2.35 0.85
1.90
occupied area
1
Dimensions in mm
0.55
(3×)
msa429
2.40
Fig 18. Reflow soldering footprint BAW56W (SOT323/SC-70)
4.60
4.00
1.15
2
3
3.65 2.10
2.70
solder lands
0.90
(2×)
solder resist
1
occupied area
Dimensions in mm
msa419
preferred transport direction during soldering
Fig 19. Wave soldering footprint BAW56W (SOT323/SC-70)
BAV756S_BAW56_SER_5
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 05 — 26 November 2007
12 of 15
BAV756S; BAW56 series
NXP Semiconductors
High-speed switching diodes
12. Revision history
Table 10. Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
BAV756S_BAW56_SER_5 20071126
Product data sheet
-
BAV756S_2
BAW56_4
BAW56S_2
BAW56T_2
BAW56W_4
Modifications:
• The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
• Legal texts have been adapted to the new company name where appropriate.
• Type number BAW56M added
• Section 1.1 “General description”: amended
• Table 1 “Product overview”: added
• Table 2 “Quick reference data”: added
• Table 6 “Limiting values”: for BAV756S, BAW56, BAW56S, BAW56T and BAW56W
change of VRRM maximum value from 85 V to 90 V
• Table 6 “Limiting values”: for BAV756S, BAW56, BAW56S, BAW56T and BAW56W
change of VR maximum value from 75 V to 90 V
• Table 8 “Characteristics”: for BAV756S, BAW56, BAW56S, BAW56T and BAW56W
change of IR condition VR from 75 V to 80 V for Tj = 25 °C
• Table 8 “Characteristics”: for BAV756S change of IR maximum value from 2.5 µA to 0.5 µA
for Tj = 25 °C
• Table 8 “Characteristics”: for BAW56, BAW56S, BAW56T and BAW56W change of
IR maximum value from 1 µA to 0.5 µA for Tj = 25 °C
• Table 8 “Characteristics”: for BAV756S, BAW56, BAW56S, BAW56T and BAW56W
change of IR condition VR from 75 V to 80 V for Tj = 150 °C
• Table 8 “Characteristics”: for BAV756S change of IR maximum value from 60 µA to 30 µA
for IR condition VR = 25 V; Tj = 150 °C
• Table 8 “Characteristics”: for BAV756S change of IR maximum value from 100 µA to
150 µA for Tj = 150 °C
• Table 8 “Characteristics”: for BAW56, BAW56S, BAW56T and BAW56W change of
IR maximum value from 50 µA to 150 µA for Tj = 150 °C
• Section 8 “Test information”: added
• Section 10 “Packing information”: added
• Section 11 “Soldering”: added
• Section 13 “Legal information”: updated
BAV756S_2
BAW56_4
19971021
20030325
19971021
19971219
19990511
Product specification
Product specification
Product specification
Product specification
Product specification
-
-
-
-
-
BAV756S_1
BAW56_3
BAW56S_1
-
BAW56S_2
BAW56T_2
BAW56W_4
BAW56W_3
BAV756S_BAW56_SER_5
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 05 — 26 November 2007
13 of 15
BAV756S; BAW56 series
NXP Semiconductors
High-speed switching diodes
13. Legal information
13.1 Data sheet status
Document status[1][2]
Product status[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
malfunction of an NXP Semiconductors product can reasonably be expected
13.2 Definitions
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
13.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
13.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
14. Contact information
For additional information, please visit: http://www.nxp.com
For sales office addresses, send an email to: salesaddresses@nxp.com
BAV756S_BAW56_SER_5
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 05 — 26 November 2007
14 of 15
BAV756S; BAW56 series
NXP Semiconductors
High-speed switching diodes
15. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1
1.2
1.3
1.4
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
2
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
Ordering information. . . . . . . . . . . . . . . . . . . . . 3
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics. . . . . . . . . . . . . . . . . . . 4
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 5
Test information. . . . . . . . . . . . . . . . . . . . . . . . . 7
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8
Packing information. . . . . . . . . . . . . . . . . . . . . . 9
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 13
3
4
5
6
7
8
9
10
11
12
13
Legal information. . . . . . . . . . . . . . . . . . . . . . . 14
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 14
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 14
13.1
13.2
13.3
13.4
14
15
Contact information. . . . . . . . . . . . . . . . . . . . . 14
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2007.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 26 November 2007
Document identifier: BAV756S_BAW56_SER_5
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