BC549C [NXP]

NPN general purpose transistors; NPN通用晶体管
BC549C
型号: BC549C
厂家: NXP    NXP
描述:

NPN general purpose transistors
NPN通用晶体管

晶体 晶体管
文件: 总8页 (文件大小:48K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
DISCRETE SEMICONDUCTORS  
DATA SHEET  
book, halfpage  
BC549; BC550  
NPN general purpose transistors  
1999 Apr 22  
Product specification  
Supersedes data of 1997 Jun 20  
Philips Semiconductors  
Product specification  
NPN general purpose transistors  
BC549; BC550  
FEATURES  
PINNING  
PIN  
Low current (max. 100 mA)  
Low voltage (max. 45 V).  
DESCRIPTION  
1
2
3
emitter  
base  
APPLICATIONS  
collector  
Low noise stages in audio frequency equipment.  
1
handbook, halfpage  
DESCRIPTION  
3
1
2
3
NPN transistor in a TO-92; SOT54 plastic package.  
PNP complements: BC559 and BC560.  
2
MAM182  
Fig.1 Simplified outline (TO-92; SOT54)  
and symbol.  
LIMITING VALUES  
In accordance with the Absolute Maximum Rating System (IEC 134).  
SYMBOL  
PARAMETER  
CONDITIONS  
open emitter  
MIN.  
MAX.  
UNIT  
VCBO  
collector-base voltage  
BC549  
30  
V
V
BC550  
50  
VCEO  
collector-emitter voltage  
BC549  
open base  
30  
V
V
V
BC550  
45  
VEBO  
IC  
emitter-base voltage  
collector current (DC)  
peak collector current  
peak base current  
total power dissipation  
storage temperature  
junction temperature  
operating ambient temperature  
open collector  
5
100  
200  
200  
500  
+150  
150  
+150  
mA  
mA  
mA  
mW  
°C  
ICM  
IBM  
Ptot  
Tstg  
Tj  
Tamb 25 °C; note 1  
65  
°C  
Tamb  
65  
°C  
Note  
1. Transistor mounted on an FR4 printed-circuit board.  
1999 Apr 22  
2
Philips Semiconductors  
Product specification  
NPN general purpose transistors  
BC549; BC550  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
CONDITIONS  
note 1  
VALUE  
250  
UNIT  
Rth j-a  
thermal resistance from junction to ambient  
K/W  
Note  
1. Transistor mounted on an FR4 printed-circuit board.  
CHARACTERISTICS  
Tj = 25 °C unless otherwise specified.  
SYMBOL  
ICBO  
PARAMETER  
CONDITIONS  
IE = 0; VCB = 30 V  
MIN. TYP. MAX. UNIT  
collector cut-off current  
15  
5
nA  
µA  
nA  
IE = 0; VCB = 30 V; Tj = 150 °C  
IEBO  
hFE  
emitter cut-off current  
DC current gain  
IC = 0; VEB = 5 V  
100  
BC549C; BC550C  
IC = 10 µA; VCE = 5 V; see Fig.2  
270  
520  
90  
IC = 2 mA; VCE = 5 V; see Fig.2  
420  
800  
250  
600  
VCEsat  
VBEsat  
VBE  
collector-emitter saturation voltage IC = 10 mA; IB = 0.5 mA  
IC = 100 mA; IB = 5 mA  
mV  
mV  
mV  
mV  
mV  
mV  
pF  
200  
700  
900  
660  
base-emitter saturation voltage  
IC = 10 mA; IB = 0.5 mA; note 1  
IC = 100 mA; IB = 5 mA; note 1  
IC = 2 mA; VCE = 5 V; note 2  
IC = 10 mA; VCE = 5 V; note 2  
IE = ie = 0; VCB = 10 V; f = 1 MHz  
IC = ic = 0; VEB = 0.5 V; f = 1 MHz  
base-emitter voltage  
580  
700  
770  
Cc  
Ce  
fT  
collector capacitance  
emitter capacitance  
transition frequency  
1.5  
11  
pF  
IC = 10 mA; VCE = 5 V;  
f = 100 MHz  
100  
MHz  
F
noise figure  
IC = 200 µA; VCE = 5 V;  
RS = 2 k; f = 10 Hz to 15.7 kHz  
4
4
dB  
dB  
IC = 200 µA; VCE = 5 V;  
RS = 2 k; f = 1 kHz; B = 200 Hz  
Notes  
1. VBEsat decreases by about 1.7 mV/K with increasing temperature.  
2. VBE decreases by about 2 mV/K with increasing temperature.  
1999 Apr 22  
3
Philips Semiconductors  
Product specification  
NPN general purpose transistors  
BC549; BC550  
MBH725  
600  
V
= 5 V  
CE  
h
FE  
400  
200  
0
10  
2  
1  
2
3
10  
1
10  
10  
10  
I
(mA)  
C
BC549C; BC550C.  
Fig.2 DC current gain; typical values.  
1999 Apr 22  
4
Philips Semiconductors  
Product specification  
NPN general purpose transistors  
BC549; BC550  
PACKAGE OUTLINE  
Plastic single-ended leaded (through hole) package; 3 leads  
SOT54  
c
E
d
A
L
b
1
2
e
1
e
D
3
b
1
L
1
0
2.5  
5 mm  
scale  
DIMENSIONS (mm are the original dimensions)  
(1)  
UNIT  
A
b
b
c
D
d
E
e
e
L
L
1
1
1
5.2  
5.0  
0.48  
0.40  
0.66  
0.56  
0.45  
0.40  
4.8  
4.4  
1.7  
1.4  
4.2  
3.6  
14.5  
12.7  
mm  
2.54  
1.27  
2.5  
Note  
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.  
REFERENCES  
OUTLINE  
EUROPEAN  
PROJECTION  
ISSUE DATE  
VERSION  
IEC  
JEDEC  
EIAJ  
97-02-28  
SOT54  
TO-92  
SC-43  
1999 Apr 22  
5
Philips Semiconductors  
Product specification  
NPN general purpose transistors  
BC549; BC550  
DEFINITIONS  
Data Sheet Status  
Objective specification  
Preliminary specification  
Product specification  
This data sheet contains target or goal specifications for product development.  
This data sheet contains preliminary data; supplementary data may be published later.  
This data sheet contains final product specifications.  
Limiting values  
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or  
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation  
of the device at these or at any other conditions above those given in the Characteristics sections of the specification  
is not implied. Exposure to limiting values for extended periods may affect device reliability.  
Application information  
Where application information is given, it is advisory and does not form part of the specification.  
LIFE SUPPORT APPLICATIONS  
These products are not designed for use in life support appliances, devices, or systems where malfunction of these  
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for  
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such  
improper use or sale.  
1999 Apr 22  
6
Philips Semiconductors  
Product specification  
NPN general purpose transistors  
BC549; BC550  
NOTES  
1999 Apr 22  
7
Philips Semiconductors – a worldwide company  
Argentina: see South America  
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Tel. +43 1 60 101 1248, Fax. +43 1 60 101 1210  
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220050 MINSK, Tel. +375 172 20 0733, Fax. +375 172 20 0773  
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Belgium: see The Netherlands  
Brazil: see South America  
Philippines: Philips Semiconductors Philippines Inc.,  
106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI,  
Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474  
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Tel. +359 2 68 9211, Fax. +359 2 68 9102  
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Romania: see Italy  
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China/Hong Kong: 501 Hong Kong Industrial Technology Centre,  
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Colombia: see South America  
Czech Republic: see Austria  
Tel. +65 350 2538, Fax. +65 251 6500  
Slovakia: see Austria  
Slovenia: see Italy  
Denmark: Sydhavnsgade 23, 1780 COPENHAGEN V,  
Tel. +45 33 29 3333, Fax. +45 33 29 3905  
South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale,  
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France: 51 Rue Carnot, BP317, 92156 SURESNES Cedex,  
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South America: Al. Vicente Pinzon, 173, 6th floor,  
04547-130 SÃO PAULO, SP, Brazil,  
Tel. +55 11 821 2333, Fax. +55 11 821 2382  
Germany: Hammerbrookstraße 69, D-20097 HAMBURG,  
Tel. +49 40 2353 60, Fax. +49 40 2353 6300  
Spain: Balmes 22, 08007 BARCELONA,  
Tel. +34 93 301 6312, Fax. +34 93 301 4107  
Hungary: see Austria  
Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM,  
Tel. +46 8 5985 2000, Fax. +46 8 5985 2745  
India: Philips INDIA Ltd, Band Box Building, 2nd floor,  
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Tel. +91 22 493 8541, Fax. +91 22 493 0966  
Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH,  
Tel. +41 1 488 2741 Fax. +41 1 488 3263  
Indonesia: PT Philips Development Corporation, Semiconductors Division,  
Gedung Philips, Jl. Buncit Raya Kav.99-100, JAKARTA 12510,  
Tel. +62 21 794 0040 ext. 2501, Fax. +62 21 794 0080  
Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1,  
TAIPEI, Taiwan Tel. +886 2 2134 2886, Fax. +886 2 2134 2874  
Ireland: Newstead, Clonskeagh, DUBLIN 14,  
Tel. +353 1 7640 000, Fax. +353 1 7640 200  
Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,  
209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260,  
Tel. +66 2 745 4090, Fax. +66 2 398 0793  
Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053,  
TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007  
Turkey: Talatpasa Cad. No. 5, 80640 GÜLTEPE/ISTANBUL,  
Tel. +90 212 279 2770, Fax. +90 212 282 6707  
Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3,  
20124 MILANO, Tel. +39 2 6752 2531, Fax. +39 2 6752 2557  
Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7,  
252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461  
Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku,  
TOKYO 108-8507, Tel. +81 3 3740 5130, Fax. +81 3 3740 5077  
United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,  
MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421  
Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL,  
Tel. +82 2 709 1412, Fax. +82 2 709 1415  
United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,  
Tel. +1 800 234 7381, Fax. +1 800 943 0087  
Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR,  
Tel. +60 3 750 5214, Fax. +60 3 757 4880  
Uruguay: see South America  
Vietnam: see Singapore  
Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905,  
Tel. +9-5 800 234 7381, Fax +9-5 800 943 0087  
Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,  
Middle East: see Italy  
Tel. +381 11 62 5344, Fax.+381 11 63 5777  
For all other countries apply to: Philips Semiconductors,  
Internet: http://www.semiconductors.philips.com  
International Marketing & Sales Communications, Building BE-p, P.O. Box 218,  
5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825  
© Philips Electronics N.V. 1999  
SCA63  
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.  
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed  
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license  
under patent- or other industrial or intellectual property rights.  
Printed in The Netherlands  
115002/00/03/pp8  
Date of release: 1999 Apr 22  
Document order number: 9397 750 05678  

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