BC638-T/R [NXP]
1000mA, 60V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, PLASTIC, SC-43A, 3 PIN;
| 型号： | BC638-T/R |
| 厂家： | 
NXP |
| 描述： | 1000mA, 60V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, PLASTIC, SC-43A, 3 PIN 开关 晶体管 |
| 文件： | 总15页 (文件大小：139K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BC638; BCP52; BCX52
60 V, 1 A PNP medium power transistors
Rev. 07 — 26 June 2007
Product data sheet
1. Product profile
1.1 General description
PNP medium power transistor series.
Table 1.
Product overview
Type number[1]
Package
NXP
NPN complement
JEITA
SC-43A
SC-73
SC-62
JEDEC
TO-92
-
BC638[2]
BCP52
BCX52
SOT54
SOT223
SOT89
BC637
BCP55
BCX55
TO-243
[1] Valid for all available selection groups.
[2] Also available in SOT54A and SOT54 variant packages (see Section 2).
1.2 Features
I High current
I Two current gain selections
I High power dissipation capability
1.3 Applications
I Linear voltage regulators
I High-side switches
I MOSFET drivers
I Amplifiers
1.4 Quick reference data
Table 2.
Quick reference data
Symbol Parameter
Conditions
Min
Typ
Max
−60
−1
Unit
V
VCEO
IC
collector-emitter voltage open base
collector current
-
-
-
-
-
-
A
ICM
hFE
peak collector current
DC current gain
single pulse; tp ≤ 1 ms
-
−1.5
250
A
VCE = −2 V;
63
IC = −150 mA
hFE selection -10
hFE selection -16
VCE = −2 V;
IC = −150 mA
63
-
-
160
250
VCE = −2 V;
100
IC = −150 mA
BC638; BCP52; BCX52
NXP Semiconductors
60 V, 1 A PNP medium power transistors
2. Pinning information
Table 3.
Pinning
Pin
Description
Simplified outline
Symbol
SOT54
1
2
3
base
2
collector
emitter
1
2
3
1
3
001aab347
sym029
SOT54A
1
2
3
base
2
collector
emitter
1
2
1
3
3
001aab348
sym029
SOT54 variant
1
2
3
base
2
collector
emitter
1
2
3
1
3
001aab447
sym029
SOT223
1
2
3
4
base
4
2, 4
collector
emitter
collector
1
1
2
3
3
sym028
SOT89
1
2
3
emitter
collector
base
2
3
1
3
2
1
006aaa231
BC638_BCP52_BCX52_7
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 07 — 26 June 2007
2 of 15
BC638; BCP52; BCX52
NXP Semiconductors
60 V, 1 A PNP medium power transistors
3. Ordering information
Table 4.
Ordering information
Type number[1] Package
Name
Description
Version
BC638[2]
BCP52
BCX52
SC-43A plastic single-ended leaded (through hole) package;
3 leads
SOT54
SC-73
plastic surface-mounted package with increased
heatsink; 4 leads
SOT223
SC-62
plastic surface-mounted package; collector pad for good SOT89
heat transfer; 3 leads
[1] Valid for all available selection groups.
[2] Also available in SOT54A and SOT54 variant packages (see Section 2 and Section 9).
4. Marking
Table 5.
Marking codes
Type number
BC638
Marking code
C638
BC638-16
BCP52
C63816
BCP52
BCP52/10
BCP52/16
AE
BCP52-10
BCP52-16
BCX52
BCX52-10
BCX52-16
AG
AM
BC638_BCP52_BCX52_7
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 07 — 26 June 2007
3 of 15
BC638; BCP52; BCX52
NXP Semiconductors
60 V, 1 A PNP medium power transistors
5. Limiting values
Table 6.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Conditions
open emitter
open base
Min
Max
−60
−60
−5
Unit
V
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
-
-
-
-
-
V
open collector
V
−1
A
ICM
peak collector current
single pulse;
−1.5
A
tp ≤ 1 ms
IBM
Ptot
peak base current
single pulse;
tp ≤ 1 ms
-
−0.2
A
total power dissipation
BC638
Tamb ≤ 25 °C
[1]
[1]
[2]
[1]
[2]
[3]
-
0.83
0.65
1
W
W
W
W
W
W
°C
°C
°C
BCP52
-
-
BCX52
-
0.5
-
0.9
-
1.3
Tj
junction temperature
ambient temperature
storage temperature
-
150
+150
+150
Tamb
Tstg
−65
−65
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2.
BC638_BCP52_BCX52_7
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 07 — 26 June 2007
4 of 15
BC638; BCP52; BCX52
NXP Semiconductors
60 V, 1 A PNP medium power transistors
006aaa219
006aaa220
1.6
1.6
P
(W)
P
(W)
tot
tot
1.2
1.2
(1)
(2)
0.8
0.4
0
0.8
0.4
0
−75
−25
0
25
75
125
175
(°C)
−75
−25
0
25
75
125
T
amb
175
(°C)
T
amb
FR4 PCB, standard footprint
(1) FR4 PCB, mounting pad for collector 1 cm2
(2) FR4 PCB, standard footprint
Fig 1. Power derating curve SOT54
Fig 2. Power derating curves SOT223
006aaa221
1.6
P
tot
(W)
(1)
(2)
(3)
1.2
0.8
0.4
0
−75
−25
0
25
75
125
175
(°C)
T
amb
(1) FR4 PCB, mounting pad for collector 6 cm2
(2) FR4 PCB, mounting pad for collector 1 cm2
(3) FR4 PCB, standard footprint
Fig 3. Power derating curves SOT89
BC638_BCP52_BCX52_7
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 07 — 26 June 2007
5 of 15
BC638; BCP52; BCX52
NXP Semiconductors
60 V, 1 A PNP medium power transistors
6. Thermal characteristics
Table 7.
Symbol
Rth(j-a)
Thermal characteristics
Parameter
Conditions
Min
Typ
Max
Unit
thermal resistance from
junction to ambient
in free air
[1]
[1]
[2]
[1]
[2]
[3]
BC638
BCP52
-
-
-
-
-
-
-
-
-
-
-
-
150
190
125
230
135
95
K/W
K/W
K/W
K/W
K/W
K/W
BCX52
Rth(j-sp)
thermal resistance from
junction to solder point
BC638
BCP52
BCX52
-
-
-
-
-
-
40
17
20
K/W
K/W
K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2.
006aaa222
3
10
Z
th(j-a)
duty cycle =
(K/W)
1
2
0.75
10
0.5
0.33
0.2
0.1
10
0.05
0.02
0.01
0
1
−1
10
−5
−4
−3
−2
−1
2
3
10
10
10
10
10
1
10
10
10
t
(s)
p
FR4 PCB, standard footprint
Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT54;
typical values
BC638_BCP52_BCX52_7
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 07 — 26 June 2007
6 of 15
BC638; BCP52; BCX52
NXP Semiconductors
60 V, 1 A PNP medium power transistors
006aaa223
3
10
Z
th(j-a)
duty cycle =
(K/W)
1
0.75
2
10
0.5
0.33
0.2
0.1
10
0.05
0.02
0.01
1
0
−1
10
−5
−4
−3
−2
−1
2
3
10
10
10
10
10
1
10
10
10
t
(s)
p
FR4 PCB, standard footprint
Fig 5. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT223;
typical values
006aaa817
3
10
duty cycle =
Z
th(j-a)
(K/W)
1.0
2
10
0.75
0.5
0.33
0.2
0.1
10
0.05
0.02
0.01
0
1
−1
10
−5
−4
−3
−2
−1
2
3
10
10
10
10
10
1
10
10
10
t
(s)
p
FR4 PCB, mounting pad for collector 1 cm2
Fig 6. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT223;
typical values
BC638_BCP52_BCX52_7
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 07 — 26 June 2007
7 of 15
BC638; BCP52; BCX52
NXP Semiconductors
60 V, 1 A PNP medium power transistors
006aaa224
3
10
Z
th(j-a)
duty cycle =
(K/W)
1
0.75
2
0.5
10
0.33
0.2
0.1
0.05
10
0.02
0.01
0
1
−1
10
−5
−4
−3
−2
−1
2
3
10
10
10
10
10
1
10
10
10
t
(s)
p
FR4 PCB, standard footprint
Fig 7. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT89;
typical values
006aaa225
3
10
Z
th(j-a)
(K/W)
duty cycle =
1
2
10
0.75
0.5
0.33
0.2
0.1
10
0.05
0.02
0.01
1
0
−1
10
−5
−4
−3
−2
−1
2
3
10
10
10
10
10
1
10
10
10
t
(s)
p
FR4 PCB, mounting pad for collector 1 cm2
Fig 8. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT89;
typical values
BC638_BCP52_BCX52_7
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 07 — 26 June 2007
8 of 15
BC638; BCP52; BCX52
NXP Semiconductors
60 V, 1 A PNP medium power transistors
006aaa818
3
10
duty cycle =
Z
th(j-a)
(K/W)
1.0
2
10
0.75
0.5
0.33
0.2
10
0.1
0.05
0.02
0.01
0
1
−1
10
−5
−4
−3
−2
−1
2
3
10
10
10
10
10
1
10
10
10
t
(s)
p
FR4 PCB, mounting pad for collector 6 cm2
Fig 9. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT89;
typical values
7. Characteristics
Table 8.
Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter Conditions
collector-base cut-off VCB = −30 V; IE = 0 A;
Min
Typ
Max
−100 nA
−10 µA
Unit
ICBO
-
-
-
-
current
VCB = −30 V; IE = 0 A;
Tj = 150 °C
IEBO
hFE
emitter-base cut-off
current
VEB = −5 V; IC = 0 A
-
-
−100 nA
DC current gain
VCE = −2 V
IC = −5 mA
63
63
40
-
-
-
-
IC = −150 mA
IC = −500 mA
VCE = −2 V
250
-
[1]
DC current gain
hFE selection -10
hFE selection -16
IC = −150 mA
IC = −150 mA
63
100
-
-
-
-
160
250
[1]
[1]
VCEsat
collector-emitter
saturation voltage
IC = −500 mA;
IB = −50 mA
−0.5
V
VBE
Cc
base-emitter voltage
VCE = −2 V; IC = −500 mA
-
-
-
−1
V
collector capacitance VCB = −10 V; IE = ie = 0 A;
15
-
pF
f = 1 MHz
fT
transition frequency
VCE = −5 V; IC = −50 mA;
-
145
-
MHz
f = 100 MHz
[1] Pulse test: tp ≤ 300 µs; δ = 0.02.
BC638_BCP52_BCX52_7
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 07 — 26 June 2007
9 of 15
BC638; BCP52; BCX52
NXP Semiconductors
60 V, 1 A PNP medium power transistors
006aaa226
006aaa230
300
−1.6
I
(mA) = −45 −40.5 −36
B
I
C
(1)
h
FE
(mA)
−31.5
−27
−22.5
−1.2
200
−18
−13.5
(2)
−0.8
−0.4
0
−9
100
−4.5
(3)
0
−10
−1
2
3
4
−1
−10
−10
−10
−10
(mA)
0
−0.4
−0.8
−1.2
−1.6
−2.0
(V)
I
V
C
CE
VCE = −2 V
Tamb = 25 °C
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig 10. DC current gain as a function of collector
current; typical values
Fig 11. Collector current as a function of
collector-emitter voltage; typical values
006aaa227
006aaa228
3
−1200
−10
V
BE
(mV)
−1000
V
CEsat
(mV)
(1)
(2)
−800
−600
−400
−200
2
−10
(1)
(3)
(2)
(3)
−10
−10
−1
2
3
4
−1
2
3
4
−10
−1
−10
−10
−10
−10
(mA)
−1
−10
−10
−10
−10
I (mA)
C
I
C
VCE = −2 V
IC/IB = 10
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 150 °C
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig 12. Base-emitter voltage as a function of collector
current; typical values
Fig 13. Collector-emitter saturation voltage as a
function of collector current; typical values
BC638_BCP52_BCX52_7
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 07 — 26 June 2007
10 of 15
BC638; BCP52; BCX52
NXP Semiconductors
60 V, 1 A PNP medium power transistors
8. Package outline
0.45
0.38
4.2
3.6
0.45
0.38
4.2
3.6
0.48
0.40
3 max
1
0.48
0.40
1
2
3
2
4.8
4.4
5.08
4.8
4.4
2.54
1.27
2.54
3
5.2
5.0
14.5
12.7
5.2
5.0
14.5
12.7
Dimensions in mm
04-11-16
Dimensions in mm
04-06-28
Fig 14. Package outline SOT54 (SC-43A/TO-92)
Fig 15. Package outline SOT54A
0.45
0.38
6.7
6.3
3.1
2.9
1.8
1.5
4.2
3.6
1.27
4
2.5
1.1
0.7
0.48
max
0.40
1
7.3 3.7
6.7 3.3
2
4.8
4.4
2.54
1.27
3
1
2
3
0.8
0.6
0.32
0.22
5.2
5.0
14.5
12.7
2.3
4.6
Dimensions in mm
05-01-10
Dimensions in mm
04-11-10
Fig 16. Package outline SOT54 variant
Fig 17. Package outline SOT223 (SC-73)
4.6
4.4
1.8
1.4
1.6
1.4
2.6
2.4
4.25
3.75
1.2
0.8
1
2
3
0.53
0.40
0.48
0.35
0.44
0.23
1.5
3
Dimensions in mm
06-08-29
Fig 18. Package outline SOT89 (SC-62/TO-243)
BC638_BCP52_BCX52_7
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 07 — 26 June 2007
11 of 15
BC638; BCP52; BCX52
NXP Semiconductors
60 V, 1 A PNP medium power transistors
9. Packing information
Table 9.
Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.[1]
Type number[2] Package
Description
Packing quantity
1000
4000
5000
10000
BC638
SOT54
bulk, straight leads
-
-
-412
-
SOT54A
tape and reel, wide pitch
tape ammopack, wide pitch
-
-
-
-116
-
-
-
-126
SOT54 variant bulk, delta pinning
-
-
-112
-
-
-
-
BCP52
BCX52
SOT223
SOT89
8 mm pitch, 12 mm tape and reel
-115
-115
-120
-135
-135
-
-
-
-
[3]
[4]
8 mm pitch, 12 mm tape and reel; T1
8 mm pitch, 12 mm tape and reel; T3
[1] For further information and the availability of packing methods, see Section 12.
[2] Valid for all available selection groups.
[3] T1: normal taping
[4] T3: 90° rotated taping
BC638_BCP52_BCX52_7
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 07 — 26 June 2007
12 of 15
BC638; BCP52; BCX52
NXP Semiconductors
60 V, 1 A PNP medium power transistors
10. Revision history
Table 10. Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
BC638_BCP52_BCX52_7 20070626
Product data sheet
-
BC638_BCP52_BCX52_6
Modifications:
• The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
• Legal texts have been adapted to the new company name where appropriate.
• Section 1.3 “Applications”: amended
• Table 6 “Limiting values”: typing error for BCX52 Ptot maximum value on 6 cm2 corrected
• Figure 1, 2, 3, 4 and 5: amended
• Figure 6: added
• Figure 7 and 8: amended
• Figure 9: added
• Figure 11: amended
• Table 9 “Packing methods”: new packing method for BCX52 added
• Section 11 “Legal information”: updated
BC638_BCP52_BCX52_6 20060329
Product data sheet
-
BC636_638_640_5
BCP51_52_53_5
BCX51_52_53_4
BC636_638_640_5
BCP51_52_53_5
BCX51_52_53_4
20041011
20030206
20011010
Product specification
Product specification
Product specification
-
-
-
BC636_638_640_4
BCP51_52_53_4
BCX51_52_53_3
BC638_BCP52_BCX52_7
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 07 — 26 June 2007
13 of 15
BC638; BCP52; BCX52
NXP Semiconductors
60 V, 1 A PNP medium power transistors
11. Legal information
11.1 Data sheet status
Document status[1][2]
Product status[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
malfunction of a NXP Semiconductors product can reasonably be expected to
11.2 Definitions
result in personal injury, death or severe property or environmental damage.
NXP Semiconductors accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or applications and therefore
such inclusion and/or use is at the customer’s own risk.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
11.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
11.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
12. Contact information
For additional information, please visit: http://www.nxp.com
For sales office addresses, send an email to: salesaddresses@nxp.com
BC638_BCP52_BCX52_7
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 07 — 26 June 2007
14 of 15
BC638; BCP52; BCX52
NXP Semiconductors
60 V, 1 A PNP medium power transistors
13. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1
1.2
1.3
1.4
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
2
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
Ordering information. . . . . . . . . . . . . . . . . . . . . 3
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal characteristics. . . . . . . . . . . . . . . . . . . 6
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 9
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 11
Packing information. . . . . . . . . . . . . . . . . . . . . 12
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 13
3
4
5
6
7
8
9
10
11
Legal information. . . . . . . . . . . . . . . . . . . . . . . 14
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 14
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 14
11.1
11.2
11.3
11.4
12
13
Contact information. . . . . . . . . . . . . . . . . . . . . 14
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2007.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 26 June 2007
Document identifier: BC638_BCP52_BCX52_7
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