BC807-25W-T [NXP]

TRANSISTOR 500 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, SC-70, 3 PIN, BIP General Purpose Small Signal;
BC807-25W-T
型号: BC807-25W-T
厂家: NXP    NXP
描述:

TRANSISTOR 500 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, SC-70, 3 PIN, BIP General Purpose Small Signal

文件: 总19页 (文件大小:233K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
BC807; BC807W; BC327  
45 V, 500 mA PNP general-purpose transistors  
Rev. 06 — 17 November 2009  
Product data sheet  
1. Product profile  
1.1 General description  
PNP general-purpose transistors.  
Table 1. Product overview  
Type number  
Package  
NXP  
NPN complement  
JEITA  
-
BC807  
SOT23  
BC817  
BC807W  
BC327[1]  
SOT323  
SOT54 (TO-92)  
SC-70  
SC-43A  
BC817W  
BC337  
[1] Also available in SOT54A and SOT54 variant packages (see Section 2).  
1.2 Features  
„ High current  
„ Low voltage  
1.3 Applications  
„ General-purpose switching and amplification  
1.4 Quick reference data  
Table 2.  
Quick reference data  
Symbol Parameter  
Conditions  
Min Typ Max Unit  
VCEO  
collector-emitter voltage  
open base;  
IC = 10 mA  
-
-
45  
V
IC  
collector current (DC)  
peak collector current  
DC current gain  
-
-
-
-
500 mA  
ICM  
hFE  
1  
A
[1]  
IC = 100 mA;  
VCE = 1 V  
BC807; BC807W; BC327  
100  
100  
160  
250  
-
-
-
-
600  
250  
400  
600  
BC807-16; BC807-16W; BC327-16  
BC807-25; BC807-25W; BC327-25  
BC807-40; BC807-40W; BC327-40  
[1] Pulse test: tp 300 μs; δ ≤ 0.02.  
BC807; BC807W; BC327  
NXP Semiconductors  
45 V, 500 mA PNP general-purpose transistors  
2. Pinning information  
Table 3.  
Pinning  
Pin  
Description  
Simplified outline  
Symbol  
SOT23  
1
2
3
base  
3
3
emitter  
collector  
1
1
2
2
sym013  
SOT323  
1
2
3
base  
3
3
emitter  
collector  
1
2
sym013  
1
2
sot323_so  
SOT54  
1
2
3
emitter  
base  
3
collector  
1
2
2
3
1
001aab347  
006aaa149  
SOT54A  
1
2
3
emitter  
base  
3
collector  
1
2
2
3
1
001aab348  
006aaa149  
SOT54 variant  
1
2
3
emitter  
base  
3
collector  
1
2
3
2
1
001aab447  
006aaa149  
BC807_BC807W_BC327_6  
© NXP B.V. 2009. All rights reserved.  
Product data sheet  
Rev. 06 — 17 November 2009  
2 of 19  
BC807; BC807W; BC327  
NXP Semiconductors  
45 V, 500 mA PNP general-purpose transistors  
3. Ordering information  
Table 4.  
Ordering information  
Type number[1] Package  
Name  
Description  
Version  
BC807  
-
plastic surface mounted package; 3 leads  
plastic surface mounted package; 3 leads  
SOT23  
BC807W  
BC327[2]  
SC-70  
SOT323  
SC-43A plastic single-ended leaded (through hole) package; SOT54  
3 leads  
[1] Valid for all available selection groups.  
[2] Also available in SOT54A and SOT54 variant packages (see Section 2 and Section 9).  
4. Marking  
Table 5.  
Marking codes  
Type number  
BC807  
Marking code[1]  
5D*  
BC807-16  
BC807-25  
BC807-40  
BC807W  
5A*  
5B*  
5C*  
5D*  
BC807-16W  
BC807-25W  
BC807-40W  
BC327  
5A*  
5B*  
5C*  
C327  
C32716  
C32725  
C32740  
BC327-16  
BC327-25  
BC327-40  
[1] * = -: made in Hong Kong  
* = p: made in Hong Kong  
* = t: made in Malaysia  
* = W: made in China  
BC807_BC807W_BC327_6  
© NXP B.V. 2009. All rights reserved.  
Product data sheet  
Rev. 06 — 17 November 2009  
3 of 19  
BC807; BC807W; BC327  
NXP Semiconductors  
45 V, 500 mA PNP general-purpose transistors  
5. Limiting values  
Table 6.  
Limiting values  
In accordance with the Absolute Maximum Rating System (IEC 60134).  
Symbol  
VCBO  
Parameter  
Conditions  
Min  
Max  
50  
45  
Unit  
V
collector-base voltage  
collector-emitter voltage  
open emitter  
-
-
VCEO  
open base;  
IC = 10 mA  
V
VEBO  
IC  
emitter-base voltage  
collector current (DC)  
peak collector current  
peak base current  
total power dissipation  
BC807  
open collector  
-
-
-
-
5  
V
500  
1  
mA  
A
ICM  
IBM  
Ptot  
200  
mA  
[1][2]  
[1][2]  
[1][2]  
Tamb 25 °C  
Tamb 25 °C  
Tamb 25 °C  
-
250  
mW  
mW  
mW  
°C  
BC807W  
-
200  
BC327  
-
625  
Tstg  
Tj  
storage temperature  
junction temperature  
ambient temperature  
65  
-
+150  
150  
°C  
Tamb  
65  
+150  
°C  
[1] Transistor mounted on an FR4 printed-circuit board, single-sided copper, tin-plated and standard footprint.  
[2] Valid for all available selection groups.  
6. Thermal characteristics  
Table 7.  
Thermal characteristics  
Symbol  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
Rth(j-a)  
thermal resistance from  
junction to ambient  
[1][2]  
[1][2]  
[1][2]  
BC807  
Tamb 25 °C  
Tamb 25 °C  
Tamb 25 °C  
-
-
-
-
-
-
500  
625  
200  
K/W  
K/W  
K/W  
BC807W  
BC327  
[1] Transistor mounted on an FR4 printed-circuit board, single-sided copper, tin-plated and standard footprint.  
[2] Valid for all available selection groups.  
BC807_BC807W_BC327_6  
© NXP B.V. 2009. All rights reserved.  
Product data sheet  
Rev. 06 — 17 November 2009  
4 of 19  
BC807; BC807W; BC327  
NXP Semiconductors  
45 V, 500 mA PNP general-purpose transistors  
7. Characteristics  
Table 8.  
Characteristics  
T
amb = 25 °C unless otherwise specified.  
Symbol  
Parameter  
Conditions  
Min  
Typ  
Max  
100  
5  
Unit  
nA  
ICBO  
collector-base cut-off current  
IE = 0 A; VCB = 20 V  
-
-
-
-
IE = 0 A; VCB = 20 V;  
Tj = 150 °C  
μA  
IEBO  
hFE  
emitter-base cut-off current  
DC current gain  
IC = 0 A; VEB = 5 V  
-
-
100  
nA  
[1]  
IC = 100 mA; VCE = 1 V  
BC807; BC807W; BC327  
100  
100  
-
-
600  
250  
BC807-16; BC807-16W;  
BC327-16  
BC807-25; BC807-25W;  
BC327-25  
160  
250  
-
-
400  
600  
BC807-40; BC807-40W;  
BC327-40  
[1]  
[1]  
hFE  
DC current gain  
IC = 500 mA; VCE = 1 V  
IC = 500 mA; IB = 50 mA  
40  
-
-
-
-
VCEsat  
collector-emitter saturation  
voltage  
700  
mV  
[2]  
VBE  
Cc  
base-emitter voltage  
collector capacitance  
IC = 500 mA; VCE = 1 V  
-
-
-
1.2  
V
IE = ie = 0 A; VCB = 10 V;  
5
-
pF  
f = 1 MHz  
fT  
transition frequency  
IC = 10 mA; VCE = 5 V;  
80  
-
-
MHz  
f = 100 MHz  
[1] Pulse test: tp 300 μs; δ ≤ 0.02.  
[2] VBE decreases by approximately 2 mV/K with increasing temperature.  
BC807_BC807W_BC327_6  
© NXP B.V. 2009. All rights reserved.  
Product data sheet  
Rev. 06 — 17 November 2009  
5 of 19  
BC807; BC807W; BC327  
NXP Semiconductors  
45 V, 500 mA PNP general-purpose transistors  
006aaa119  
006aaa120  
300  
600  
(1)  
h
FE  
h
FE  
(1)  
(2)  
200  
400  
(2)  
(3)  
100  
200  
(3)  
0
10  
0
10  
1  
2
3
1  
2
3
1  
10  
10  
10  
1  
10  
10  
10  
I
(mA)  
I (mA)  
C
C
VCE = 1 V  
VCE = 1 V  
(1) Tamb = 150 °C  
(2) Tamb = 25 °C  
(3) Tamb = 55 °C  
(1) Tamb = 150 °C  
(2) Tamb = 25 °C  
(3) Tamb = 55 °C  
Fig 1. Selection -16: DC current gain as a function of  
collector current; typical values  
Fig 2. Selection -25: DC current gain as a function of  
collector current; typical values  
006aaa121  
800  
h
FE  
600  
(1)  
400  
200  
0
(2)  
(3)  
1  
2
3
10  
1  
10  
10  
10  
I
(mA)  
C
VCE = 1 V  
(1) Tamb = 150 °C  
(2) Tamb = 25 °C  
(3) Tamb = 55 °C  
Fig 3. Selection -40: DC current gain as a function of collector current; typical values  
BC807_BC807W_BC327_6  
© NXP B.V. 2009. All rights reserved.  
Product data sheet  
Rev. 06 — 17 November 2009  
6 of 19  
BC807; BC807W; BC327  
NXP Semiconductors  
45 V, 500 mA PNP general-purpose transistors  
006aaa122  
006aaa123  
10  
10  
V
V
BEsat  
(V)  
BEsat  
(V)  
1  
1  
(1)  
(2)  
(3)  
(1)  
(2)  
(3)  
1  
10  
1  
10  
10  
10  
1  
2
3
1  
2
3
1  
10  
10  
10  
1  
10  
10  
10  
I
(mA)  
I (mA)  
C
C
IC/IB = 10  
IC/IB = 10  
(1) Tamb = 55 °C  
(2) Tamb = 25 °C  
(3) Tamb = 150 °C  
(1) Tamb = 55 °C  
(2) Tamb = 25 °C  
(3) Tamb = 150 °C  
Fig 4. Selection -16: Base-emitter saturation voltage  
as a function of collector current; typical  
values  
Fig 5. Selection -25: Base-emitter saturation voltage  
as a function of collector current; typical  
values  
006aaa124  
10  
V
BEsat  
(V)  
1  
(1)  
(2)  
(3)  
1  
10  
10  
1  
2
3
1  
10  
10  
10  
I
(mA)  
C
IC/IB = 10  
(1) Tamb = 55 °C  
(2) Tamb = 25 °C  
(3) Tamb = 150 °C  
Fig 6. Selection -40: Base-emitter saturation voltage as a function of collector current; typical values  
BC807_BC807W_BC327_6  
© NXP B.V. 2009. All rights reserved.  
Product data sheet  
Rev. 06 — 17 November 2009  
7 of 19  
BC807; BC807W; BC327  
NXP Semiconductors  
45 V, 500 mA PNP general-purpose transistors  
006aaa125  
006aaa126  
1  
1  
V
CEsat  
(V)  
V
CEsat  
(V)  
1  
10  
10  
10  
1  
10  
(1)  
(3)  
(2)  
2  
(1)  
(3)  
(2)  
2  
10  
3  
10  
10  
1  
2
3
1  
2
3
1  
10  
10  
10  
1  
10  
10  
10  
I
(mA)  
I (mA)  
C
C
IC/IB = 10  
IC/IB = 10  
(1) Tamb = 150 °C  
(2) Tamb = 25 °C  
(3) Tamb = 55 °C  
(1) Tamb = 150 °C  
(2) Tamb = 25 °C  
(3) Tamb = 55 °C  
Fig 7. Selection -16: Collector-emitter saturation  
voltage as a function of collector current;  
typical values  
Fig 8. Selection- 25: Collector-emitter saturation  
voltage as a function of collector current;  
typical values  
006aaa127  
1  
V
CEsat  
(V)  
1  
10  
10  
10  
(1)  
(2)  
(3)  
2  
3  
10  
1  
2
3
1  
10  
10  
10  
I
(mA)  
C
IC/IB = 10  
(1) Tamb = 150 °C  
(2) Tamb = 25 °C  
(3) Tamb = 55 °C  
Fig 9. Selection -40: Collector-emitter saturation voltage as a function of collector current; typical values  
BC807_BC807W_BC327_6  
© NXP B.V. 2009. All rights reserved.  
Product data sheet  
Rev. 06 — 17 November 2009  
8 of 19  
BC807; BC807W; BC327  
NXP Semiconductors  
45 V, 500 mA PNP general-purpose transistors  
006aaa128  
006aaa129  
1.2  
1.2  
(3) (2) (1)  
(3) (2) (1)  
I
I
C
C
(A)  
(A)  
(4)  
(5)  
(4)  
(5)  
(6)  
(7)  
0.8  
0.8  
(6)  
(7)  
(8)  
(9)  
(8)  
(9)  
0.4  
0.4  
(10)  
(10)  
0
0
0
1  
2  
3  
4  
5  
(V)  
0
1  
2  
3  
4  
5  
(V)  
V
CE  
V
CE  
Tamb = 25 °C  
Tamb = 25 °C  
(1) IB = 16.0 mA  
(2) IB = 14.4 mA  
(3) IB = 12.8 mA  
(4) IB = 11.2 mA  
(5) IB = 9.6 mA  
(6) IB = 8.0 mA  
(7) IB = 6.4 mA  
(8) IB = 4.8 mA  
(9) IB = 3.2 mA  
(10) IB = 1.6 mA  
(1) IB = 13.0 mA  
(2) IB = 11.7 mA  
(3) IB = 10.4 mA  
(4) IB = 9.1 mA  
(5) IB = 7.8 mA  
(6) IB = 6.5 mA  
(7) IB = 5.2 mA  
(8) IB = 3.9 mA  
(9) IB = 2.6 mA  
(10) IB = 1.3 mA  
Fig 10. Selection -16: Collector current as a function  
of collector-emitter voltage; typical values  
Fig 11. Selection -25: Collector current as a function  
of collector-emitter voltage; typical values  
BC807_BC807W_BC327_6  
© NXP B.V. 2009. All rights reserved.  
Product data sheet  
Rev. 06 — 17 November 2009  
9 of 19  
BC807; BC807W; BC327  
NXP Semiconductors  
45 V, 500 mA PNP general-purpose transistors  
006aaa130  
1.2  
(5) (4) (3)  
(2) (1)  
I
C
(A)  
0.8  
(6)  
(7)  
(8)  
(9)  
0.4  
(10)  
0
0
1  
2  
3  
4  
5  
(V)  
V
CE  
Tamb = 25 °C  
(1) IB = 12.0 mA  
(2) IB = 10.8 mA  
(3) IB = 9.6 mA  
(4) IB = 8.4 mA  
(5) IB = 7.2 mA  
(6) IB = 6.0 mA  
(7) IB = 4.8 mA  
(8) IB = 3.6 mA  
(9) IB = 2.4 mA  
(10) IB = 1.2 mA  
Fig 12. Selection -40: Collector current as a function of collector-emitter voltage; typical values  
BC807_BC807W_BC327_6  
© NXP B.V. 2009. All rights reserved.  
Product data sheet  
Rev. 06 — 17 November 2009  
10 of 19  
BC807; BC807W; BC327  
NXP Semiconductors  
45 V, 500 mA PNP general-purpose transistors  
8. Package outline  
Plastic surface-mounted package; 3 leads  
SOT23  
D
B
E
A
X
H
v
M
A
E
3
Q
A
A
1
c
1
2
e
b
w M  
B
1
L
p
p
e
detail X  
0
1
2 mm  
scale  
DIMENSIONS (mm are the original dimensions)  
A
1
UNIT  
b
c
D
E
e
e
H
L
Q
v
w
A
p
p
1
E
max.  
1.1  
0.9  
0.48  
0.38  
0.15  
0.09  
3.0  
2.8  
1.4  
1.2  
2.5  
2.1  
0.45  
0.15  
0.55  
0.45  
mm  
0.1  
1.9  
0.95  
0.2  
0.1  
REFERENCES  
EUROPEAN  
PROJECTION  
OUTLINE  
VERSION  
ISSUE DATE  
IEC  
JEDEC  
JEITA  
04-11-04  
06-03-16  
SOT23  
TO-236AB  
Fig 13. Package outline SOT23 (TO-236AB)  
BC807_BC807W_BC327_6  
© NXP B.V. 2009. All rights reserved.  
Product data sheet  
Rev. 06 — 17 November 2009  
11 of 19  
BC807; BC807W; BC327  
NXP Semiconductors  
45 V, 500 mA PNP general-purpose transistors  
Plastic surface-mounted package; 3 leads  
SOT323  
D
B
E
A
X
H
y
v M  
A
E
3
Q
A
A
1
c
1
2
L
p
e
b
w
M B  
1
p
e
detail X  
0
1
2 mm  
scale  
DIMENSIONS (mm are the original dimensions)  
A
1
max  
A
UNIT  
b
c
D
E
e
e
H
E
L
Q
v
w
p
p
1
1.1  
0.8  
0.4  
0.3  
0.25  
0.10  
2.2  
1.8  
1.35  
1.15  
2.2  
2.0  
0.45  
0.15  
0.23  
0.13  
mm  
0.1  
1.3  
0.65  
0.2  
0.2  
REFERENCES  
JEDEC JEITA  
EUROPEAN  
PROJECTION  
OUTLINE  
VERSION  
ISSUE DATE  
IEC  
04-11-04  
06-03-16  
SOT323  
SC-70  
Fig 14. Package outline SOT323 (SC-70)  
BC807_BC807W_BC327_6  
© NXP B.V. 2009. All rights reserved.  
Product data sheet  
Rev. 06 — 17 November 2009  
12 of 19  
BC807; BC807W; BC327  
NXP Semiconductors  
45 V, 500 mA PNP general-purpose transistors  
Plastic single-ended leaded (through hole) package; 3 leads  
SOT54  
c
E
d
A
L
b
1
2
e
1
e
D
3
b
1
L
1
0
2.5  
5 mm  
scale  
DIMENSIONS (mm are the original dimensions)  
(1)  
L
max.  
1
UNIT  
A
b
b
c
D
d
E
e
e
L
1
1
5.2  
5.0  
0.48  
0.40  
0.66  
0.55  
0.45  
0.38  
4.8  
4.4  
1.7  
1.4  
4.2  
3.6  
14.5  
12.7  
mm  
2.54  
1.27  
2.5  
Note  
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.  
REFERENCES  
OUTLINE  
EUROPEAN  
PROJECTION  
ISSUE DATE  
VERSION  
IEC  
JEDEC  
JEITA  
04-06-28  
04-11-16  
SOT54  
TO-92  
SC-43A  
Fig 15. Package outline SOT54 (SC-43A/TO-92)  
BC807_BC807W_BC327_6  
© NXP B.V. 2009. All rights reserved.  
Product data sheet  
Rev. 06 — 17 November 2009  
13 of 19  
BC807; BC807W; BC327  
NXP Semiconductors  
45 V, 500 mA PNP general-purpose transistors  
Plastic single-ended leaded (through hole) package; 3 leads (wide pitch)  
SOT54A  
c
E
A
L
d
L
b
2
1
e
1
e
D
2
3
b
1
L
1
0
2.5  
5 mm  
scale  
DIMENSIONS (mm are the original dimensions)  
(1)  
L
1
UNIT  
A
b
b
c
D
d
E
e
e
L
L
2
1
1
max.  
5.2  
5.0  
0.48  
0.40  
0.66  
0.55  
0.45  
0.38  
4.8  
4.4  
1.7  
1.4  
4.2  
3.6  
14.5  
12.7  
3
2
mm  
5.08  
2.54  
3
Note  
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.  
REFERENCES  
OUTLINE  
EUROPEAN  
PROJECTION  
ISSUE DATE  
VERSION  
IEC  
JEDEC  
JEITA  
97-05-13  
04-06-28  
SOT54A  
Fig 16. Package outline SOT54A  
BC807_BC807W_BC327_6  
© NXP B.V. 2009. All rights reserved.  
Product data sheet  
Rev. 06 — 17 November 2009  
14 of 19  
BC807; BC807W; BC327  
NXP Semiconductors  
45 V, 500 mA PNP general-purpose transistors  
Plastic single-ended leaded (through hole) package; 3 leads (on-circle)  
SOT54 variant  
c
e
1
L
2
E
d
A
L
b
1
2
e
1
e
D
3
b
1
L
1
0
2.5  
5 mm  
scale  
DIMENSIONS (mm are the original dimensions)  
(1)  
L
L
2
1
UNIT  
A
b
b
c
D
d
E
e
e
L
1
1
max  
max  
5.2  
5.0  
0.48  
0.40  
0.66  
0.55  
0.45  
0.38  
4.8  
4.4  
1.7  
1.4  
4.2  
3.6  
14.5  
12.7  
mm  
2.54  
1.27  
2.5  
2.5  
Note  
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.  
REFERENCES  
OUTLINE  
EUROPEAN  
PROJECTION  
ISSUE DATE  
VERSION  
IEC  
JEDEC  
JEITA  
04-06-28  
05-01-10  
SOT54 variant  
Fig 17. Package outline SOT54 variant  
BC807_BC807W_BC327_6  
© NXP B.V. 2009. All rights reserved.  
Product data sheet  
Rev. 06 — 17 November 2009  
15 of 19  
BC807; BC807W; BC327  
NXP Semiconductors  
45 V, 500 mA PNP general-purpose transistors  
9. Packing information  
Table 9.  
Packing methods  
The indicated -xxx are the last three digits of the 12NC ordering code.[1]  
Type number  
Package  
Description  
Packing quantity  
3000  
5000  
10000  
-235  
-135  
-
BC807  
BC807W  
BC327  
BC327  
BC327  
BC327  
SOT23  
4 mm pitch, 8 mm tape and reel  
4 mm pitch, 8 mm tape and reel  
bulk, straight leads  
-215  
-
SOT323  
SOT54  
-115  
-
-
-
-
-
-412  
SOT54A  
SOT54A  
SOT 54 variant  
tape and reel, wide pitch  
-
-116  
-126  
-
tape ammopack, wide pitch  
bulk, delta pinning (on-circle)  
-
-112  
[1] For further information and the availability of packing methods, see Section 12.  
BC807_BC807W_BC327_6  
© NXP B.V. 2009. All rights reserved.  
Product data sheet  
Rev. 06 — 17 November 2009  
16 of 19  
BC807; BC807W; BC327  
NXP Semiconductors  
45 V, 500 mA PNP general-purpose transistors  
10. Revision history  
Table 10. Revision history  
Document ID  
Release date  
20091117  
Data sheet status  
Change notice  
Supersedes  
BC807_BC807W_  
BC327_6  
Product data sheet  
-
BC807_BC807W_  
BC327_5  
Modifications:  
This data sheet was changed to reflect the new company name NXP Semiconductors,  
including new legal definitions and disclaimers. No changes were made to the technical  
content.  
Table 3 “Pinning”: updated  
Figure 13 “Package outline SOT23 (TO-236AB)”: updated  
Figure 14 “Package outline SOT323 (SC-70)”: updated  
BC807_BC807W_  
BC327_5  
20050221  
Product data sheet  
CPCN200302007F BC807_4; BC807W_3;  
CPCN200405006F BC327_3  
BC807_4  
BC807W_3  
BC327_3  
20040116  
19990518  
19990415  
Product specification  
Product specification  
Product specification  
-
-
-
BC807_3  
BC807W_808W_CNV_2  
BC327_2  
BC807_BC807W_BC327_6  
© NXP B.V. 2009. All rights reserved.  
Product data sheet  
Rev. 06 — 17 November 2009  
17 of 19  
BC807; BC807W; BC327  
NXP Semiconductors  
45 V, 500 mA PNP general-purpose transistors  
11. Legal information  
11.1 Data sheet status  
Document status[1][2]  
Product status[3]  
Development  
Definition  
Objective [short] data sheet  
This document contains data from the objective specification for product development.  
This document contains data from the preliminary specification.  
This document contains the product specification.  
Preliminary [short] data sheet Qualification  
Product [short] data sheet Production  
[1]  
[2]  
[3]  
Please consult the most recently issued document before initiating or completing a design.  
The term ‘short data sheet’ is explained in section “Definitions”.  
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status  
information is available on the Internet at URL http://www.nxp.com.  
damage. NXP Semiconductors accepts no liability for inclusion and/or use of  
NXP Semiconductors products in such equipment or applications and  
therefore such inclusion and/or use is at the customer’s own risk.  
11.2 Definitions  
Draft — The document is a draft version only. The content is still under  
internal review and subject to formal approval, which may result in  
modifications or additions. NXP Semiconductors does not give any  
representations or warranties as to the accuracy or completeness of  
information included herein and shall have no liability for the consequences of  
use of such information.  
Applications — Applications that are described herein for any of these  
products are for illustrative purposes only. NXP Semiconductors makes no  
representation or warranty that such applications will be suitable for the  
specified use without further testing or modification.  
Limiting values — Stress above one or more limiting values (as defined in  
the Absolute Maximum Ratings System of IEC 60134) may cause permanent  
damage to the device. Limiting values are stress ratings only and operation of  
the device at these or any other conditions above those given in the  
Characteristics sections of this document is not implied. Exposure to limiting  
values for extended periods may affect device reliability.  
Short data sheet — A short data sheet is an extract from a full data sheet  
with the same product type number(s) and title. A short data sheet is intended  
for quick reference only and should not be relied upon to contain detailed and  
full information. For detailed and full information see the relevant full data  
sheet, which is available on request via the local NXP Semiconductors sales  
office. In case of any inconsistency or conflict with the short data sheet, the  
full data sheet shall prevail.  
Terms and conditions of sale — NXP Semiconductors products are sold  
subject to the general terms and conditions of commercial sale, as published  
at http://www.nxp.com/profile/terms, including those pertaining to warranty,  
intellectual property rights infringement and limitation of liability, unless  
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of  
any inconsistency or conflict between information in this document and such  
terms and conditions, the latter will prevail.  
11.3 Disclaimers  
General — Information in this document is believed to be accurate and  
reliable. However, NXP Semiconductors does not give any representations or  
warranties, expressed or implied, as to the accuracy or completeness of such  
information and shall have no liability for the consequences of use of such  
information.  
No offer to sell or license — Nothing in this document may be interpreted or  
construed as an offer to sell products that is open for acceptance or the grant,  
conveyance or implication of any license under any copyrights, patents or  
other industrial or intellectual property rights.  
Right to make changes — NXP Semiconductors reserves the right to make  
changes to information published in this document, including without  
limitation specifications and product descriptions, at any time and without  
notice. This document supersedes and replaces all information supplied prior  
to the publication hereof.  
Export control — This document as well as the item(s) described herein  
may be subject to export control regulations. Export might require a prior  
authorization from national authorities.  
Quick reference data — The Quick reference data is an extract of the  
product data given in the Limiting values and Characteristics sections of this  
document, and as such is not complete, exhaustive or legally binding.  
Suitability for use — NXP Semiconductors products are not designed,  
authorized or warranted to be suitable for use in medical, military, aircraft,  
space or life support equipment, nor in applications where failure or  
malfunction of an NXP Semiconductors product can reasonably be expected  
to result in personal injury, death or severe property or environmental  
11.4 Trademarks  
Notice: All referenced brands, product names, service names and trademarks  
are the property of their respective owners.  
12. Contact information  
For more information, please visit: http://www.nxp.com  
For sales office addresses, please send an email to: salesaddresses@nxp.com  
BC807_BC807W_BC327_6  
© NXP B.V. 2009. All rights reserved.  
Product data sheet  
Rev. 06 — 17 November 2009  
18 of 19  
BC807; BC807W; BC327  
NXP Semiconductors  
45 V, 500 mA PNP general-purpose transistors  
13. Contents  
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
1.1  
1.2  
1.3  
1.4  
General description . . . . . . . . . . . . . . . . . . . . . 1  
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
Quick reference data . . . . . . . . . . . . . . . . . . . . 1  
2
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2  
Ordering information. . . . . . . . . . . . . . . . . . . . . 3  
Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3  
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 4  
Thermal characteristics . . . . . . . . . . . . . . . . . . 4  
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 5  
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 11  
Packing information . . . . . . . . . . . . . . . . . . . . 16  
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 17  
3
4
5
6
7
8
9
10  
11  
Legal information. . . . . . . . . . . . . . . . . . . . . . . 18  
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 18  
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 18  
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 18  
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 18  
11.1  
11.2  
11.3  
11.4  
12  
13  
Contact information. . . . . . . . . . . . . . . . . . . . . 18  
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19  
Please be aware that important notices concerning this document and the product(s)  
described herein, have been included in section ‘Legal information’.  
© NXP B.V. 2009.  
All rights reserved.  
For more information, please visit: http://www.nxp.com  
For sales office addresses, please send an email to: salesaddresses@nxp.com  
Date of release: 17 November 2009  
Document identifier: BC807_BC807W_BC327_6  

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