BC817-40WT/R [NXP]
TRANSISTOR 500 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, SC-70, 3 PIN, BIP General Purpose Small Signal;
| 型号： | BC817-40WT/R |
| 厂家： | 
NXP |
| 描述： | TRANSISTOR 500 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, SC-70, 3 PIN, BIP General Purpose Small Signal |
| 文件： | 总19页 (文件大小：236K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BC817; BC817W; BC337
45 V, 500 mA NPN general-purpose transistors
Rev. 06 — 17 November 2009
Product data sheet
1. Product profile
1.1 General description
NPN general-purpose transistors.
Table 1. Product overview
Type number
Package
NXP
PNP complement
JEITA
-
BC817
SOT23
BC807
BC817W
BC337[1]
SOT323
SOT54 (TO-92)
SC-70
SC-43A
BC807W
BC327
[1] Also available in SOT54A and SOT54 variant packages (see Section 2).
1.2 Features
High current
Low voltage
1.3 Applications
General-purpose switching and amplification
1.4 Quick reference data
Table 2.
Quick reference data
Symbol Parameter
Conditions
Min Typ Max Unit
VCEO
collector-emitter voltage
open base;
IC = 10 mA
-
-
45
V
IC
collector current (DC)
-
-
-
-
-
-
-
-
500 mA
ICM
hFE
peak collector current
-
1
A
[1]
DC current gain
IC = 100 mA;
VCE = 1 V
-
-
BC817; BC817W; BC337
BC817-16; BC817-16W; BC337-16
BC817-25; BC817-25W; BC337-25
BC817-40; BC817-40W; BC337-40
100
100
160
250
600
250
400
600
[1] Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
BC817; BC817W; BC337
NXP Semiconductors
45 V, 500 mA NPN general-purpose transistors
2. Pinning information
Table 3.
Pinning
Pin
Description
Simplified outline
Symbol
SOT23
1
2
3
base
3
3
emitter
collector
1
1
2
2
sym021
SOT323
1
2
3
base
3
3
emitter
collector
1
2
sym021
1
2
sot323_so
SOT54
1
2
3
emitter
base
3
collector
1
2
3
2
2
2
1
001aab347
sym026
SOT54A
1
2
3
emitter
base
3
collector
1
2
3
1
001aab348
sym026
SOT54 variant
1
2
3
emitter
base
3
collector
1
2
3
1
001aab447
sym026
BC817_BC817W_BC337_6
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 06 — 17 November 2009
2 of 19
BC817; BC817W; BC337
NXP Semiconductors
45 V, 500 mA NPN general-purpose transistors
3. Ordering information
Table 4.
Ordering information
Type number[1] Package
Name
Description
Version
BC817
-
plastic surface mounted package; 3 leads
plastic surface mounted package; 3 leads
SOT23
BC817W
BC337[2]
SC-70
SOT323
SC-43A plastic single-ended leaded (through hole) package; SOT54
3 leads
[1] Valid for all available selection groups.
[2] Also available in SOT54A and SOT54 variant packages (see Section 2 and Section 9).
4. Marking
Table 5.
Marking codes
Type number
BC817
Marking code[1]
6D*
BC817-16
BC817-25
BC817-40
BC817W
6A*
6B*
6C*
6D*
BC817-16W
BC817-25W
BC817-40W
BC337
6A*
6B*
6C*
C337
C33716
C33725
C33740
BC337-16
BC337-25
BC337-40
[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
BC817_BC817W_BC337_6
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 06 — 17 November 2009
3 of 19
BC817; BC817W; BC337
NXP Semiconductors
45 V, 500 mA NPN general-purpose transistors
5. Limiting values
Table 6.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Max
50
Unit
V
VCBO
VCEO
collector-base voltage
open emitter
-
-
collector-emitter voltage
open base;
IC = 10 mA
45
V
VEBO
IC
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
BC817
open collector
-
-
-
-
5
V
500
1
mA
A
ICM
IBM
Ptot
200
mA
[1][2]
[1][2]
[1][2]
Tamb ≤ 25 °C
Tamb ≤ 25 °C
Tamb ≤ 25 °C
-
250
mW
mW
mW
°C
BC817W
-
200
BC337
-
625
Tstg
Tj
storage temperature
junction temperature
ambient temperature
−65
-
+150
150
°C
Tamb
−65
+150
°C
[1] Transistor mounted on an FR4 printed-circuit board, single-sided copper, tin-plated and standard footprint.
[2] Valid for all available selection groups.
6. Thermal characteristics
Table 7.
Symbol Parameter
Rth(j-a) thermal resistance from
Thermal characteristics
Conditions
Min
Typ
Max Unit
junction to ambient
[1][2]
[1][2]
[1][2]
BC817
Tamb ≤ 25 °C
Tamb ≤ 25 °C
Tamb ≤ 25 °C
-
-
-
-
-
-
500
625
200
K/W
K/W
K/W
BC817W
BC337
[1] Transistor mounted on an FR4 printed-circuit board, single-sided copper, tin-plated and standard footprint.
[2] Valid for all available selection groups.
BC817_BC817W_BC337_6
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 06 — 17 November 2009
4 of 19
BC817; BC817W; BC337
NXP Semiconductors
45 V, 500 mA NPN general-purpose transistors
7. Characteristics
Table 8.
Characteristics
T
amb = 25 °C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
100
5
Unit
nA
ICBO
collector-base cut-off current
IE = 0 A; VCB = 20 V
-
-
-
-
IE = 0 A; VCB = 20 V;
μA
Tj = 150 °C
IEBO
hFE
emitter-base cut-off current
DC current gain
IC = 0 A; VEB = 5 V
-
-
100
nA
[1]
IC = 100 mA; VCE = 1 V
BC817; BC817W; BC337
100
100
-
-
600
250
BC817-16; BC817-16W;
BC337-16
BC817-25; BC817-25W;
BC337-25
160
250
-
-
400
600
BC817-40; BC817-40W;
BC337-40
[1]
[1]
hFE
DC current gain
IC = 500 mA; VCE = 1 V
IC = 500 mA; IB = 50 mA
40
-
-
-
-
VCEsat
collector-emitter saturation
voltage
700
mV
[2]
VBE
Cc
base-emitter voltage
collector capacitance
IC = 500 mA; VCE = 1 V
-
-
-
1.2
-
V
IE = ie = 0 A; VCB = 10 V;
f = 1 MHz
3
pF
fT
transition frequency
IC = 10 mA; VCE = 5 V;
f = 100 MHz
100
-
-
MHz
[1] Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
[2] VBE decreases by approximately 2 mV/K with increasing temperature.
BC817_BC817W_BC337_6
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 06 — 17 November 2009
5 of 19
BC817; BC817W; BC337
NXP Semiconductors
45 V, 500 mA NPN general-purpose transistors
006aaa131
006aaa132
400
600
h
FE
h
FE
(1)
300
(1)
400
200
100
0
(2)
(3)
(2)
(3)
200
0
10
−1
2
3
−1
2
3
10
1
10
10
10
1
10
10
10
I
(mA)
I (mA)
C
C
VCE = 1 V
VCE = 1 V
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig 1. Selection -16: DC current gain as a function of
collector current; typical values
Fig 2. Selection -25: DC current gain as a function of
collector current; typical values
006aaa133
800
h
FE
(1)
600
(2)
(3)
400
200
0
−1
2
3
10
1
10
10
10
I
(mA)
C
VCE = 1 V
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig 3. Selection -40: DC current gain as a function of collector current; typical values
BC817_BC817W_BC337_6
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 06 — 17 November 2009
6 of 19
BC817; BC817W; BC337
NXP Semiconductors
45 V, 500 mA NPN general-purpose transistors
006aaa134
006aaa135
10
10
V
V
BEsat
(V)
BEsat
(V)
1
1
(1)
(1)
(2)
(3)
(2)
(3)
−1
10
−1
10
10
−1
2
3
−1
2
3
1
10
10
10
10
1
10
10
10
I
(mA)
I (mA)
C
C
IC/IB = 10
IC/IB = 10
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 150 °C
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 150 °C
Fig 4. Selection -16: Base-emitter saturation voltage
as a function of collector current; typical
values
Fig 5. Selection -25: Base-emitter saturation voltage
as a function of collector current; typical
values
006aaa136
10
V
BEsat
(V)
1
(1)
(2)
(3)
−1
10
10
−1
2
3
1
10
10
10
I
(mA)
C
IC/IB = 10
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 150 °C
Fig 6. Selection -40: Base-emitter saturation voltage as a function of collector current; typical values
BC817_BC817W_BC337_6
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 06 — 17 November 2009
7 of 19
BC817; BC817W; BC337
NXP Semiconductors
45 V, 500 mA NPN general-purpose transistors
006aaa137
006aaa138
1
1
V
CEsat
(V)
V
CEsat
(V)
−1
10
−1
10
(1)
(3)
(2)
−2
10
(1) (2)
(3)
−2
10
−3
10
10
10
−1
2
3
−1
2
3
1
10
10
10
1
10
10
10
I
(mA)
I (mA)
C
C
IC/IB = 10
IC/IB = 10
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig 7. Selection -16: Collector-emitter saturation
voltage as a function of collector current;
typical values
Fig 8. Selection -25: Collector-emitter saturation
voltage as a function of collector current;
typical values
006aaa139
1
V
CEsat
(V)
−1
10
(1)
(2)
−2
10
(3)
−3
10
10
−1
2
3
1
10
10
10
I
(mA)
C
IC/IB = 10
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig 9. Selection -40: Collector-emitter saturation voltage as a function of collector current; typical values
BC817_BC817W_BC337_6
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 06 — 17 November 2009
8 of 19
BC817; BC817W; BC337
NXP Semiconductors
45 V, 500 mA NPN general-purpose transistors
006aaa140
006aaa141
1.2
1.2
(6) (5) (4) (3) (2) (1)
(5) (4) (3)
(2) (1)
I
I
C
C
(A)
(A)
0.8
0.8
(6)
(7)
(7)
(8)
(8)
(9)
(9)
0.4
0.4
(10)
(10)
0
0
0
1
2
3
4
5
0
1
2
3
4
5
V
CE
(V)
V
CE
(V)
Tamb = 25 °C
Tamb = 25 °C
(1) IB = 16.0 mA
(2) IB = 14.4 mA
(3) IB = 12.8 mA
(4) IB = 11.2 mA
(5) IB = 9.6 mA
(6) IB = 8.0 mA
(7) IB = 6.4 mA
(8) IB = 4.8 mA
(9) IB = 3.2 mA
(10) IB = 1.6 mA
(1) IB = 13.0 mA
(2) IB = 11.7 mA
(3) IB = 10.4 mA
(4) IB = 9.1 mA
(5) IB = 7.8 mA
(6) IB = 6.5 mA
(7) IB = 5.2 mA
(8) IB = 3.9 mA
(9) IB = 2.6 mA
(10) IB = 1.3 mA
Fig 10. Selection -16: Collector current as a function
of collector-emitter voltage; typical values
Fig 11. Selection -25: Collector current as a function
of collector-emitter voltage; typical values
BC817_BC817W_BC337_6
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 06 — 17 November 2009
9 of 19
BC817; BC817W; BC337
NXP Semiconductors
45 V, 500 mA NPN general-purpose transistors
006aaa142
1.2
(6) (5) (4) (3) (2) (1)
I
C
(A)
0.8
(7)
(8)
(9)
0.4
(10)
0
0
1
2
3
4
5
V
CE
(V)
Tamb = 25 °C
(1) IB = 12.0 mA
(2) IB = 10.8 mA
(3) IB = 9.6 mA
(4) IB = 8.4 mA
(5) IB = 7.2 mA
(6) IB = 6.0 mA
(7) IB = 4.8 mA
(8) IB = 3.6 mA
(9) IB = 2.4 mA
(10) IB = 1.2 mA
Fig 12. Selection -40: Collector current as a function of collector-emitter voltage; typical values
BC817_BC817W_BC337_6
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 06 — 17 November 2009
10 of 19
BC817; BC817W; BC337
NXP Semiconductors
45 V, 500 mA NPN general-purpose transistors
8. Package outline
Plastic surface-mounted package; 3 leads
SOT23
D
B
E
A
X
H
v
M
A
E
3
Q
A
A
1
c
1
2
e
b
w M
B
1
L
p
p
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
1
UNIT
b
c
D
E
e
e
H
L
Q
v
w
A
p
p
1
E
max.
1.1
0.9
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
2.5
2.1
0.45
0.15
0.55
0.45
mm
0.1
1.9
0.95
0.2
0.1
REFERENCES
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
JEDEC
JEITA
04-11-04
06-03-16
SOT23
TO-236AB
Fig 13. Package outline SOT23 (TO-236AB)
BC817_BC817W_BC337_6
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 06 — 17 November 2009
11 of 19
BC817; BC817W; BC337
NXP Semiconductors
45 V, 500 mA NPN general-purpose transistors
Plastic surface-mounted package; 3 leads
SOT323
D
B
E
A
X
H
y
v M
A
E
3
Q
A
A
1
c
1
2
L
p
e
b
w
M B
1
p
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
1
max
A
UNIT
b
c
D
E
e
e
H
E
L
Q
v
w
p
p
1
1.1
0.8
0.4
0.3
0.25
0.10
2.2
1.8
1.35
1.15
2.2
2.0
0.45
0.15
0.23
0.13
mm
0.1
1.3
0.65
0.2
0.2
REFERENCES
JEDEC JEITA
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
04-11-04
06-03-16
SOT323
SC-70
Fig 14. Package outline SOT323 (SC-70)
BC817_BC817W_BC337_6
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 06 — 17 November 2009
12 of 19
BC817; BC817W; BC337
NXP Semiconductors
45 V, 500 mA NPN general-purpose transistors
Plastic single-ended leaded (through hole) package; 3 leads
SOT54
c
E
d
A
L
b
1
2
e
1
e
D
3
b
1
L
1
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
(1)
L
max.
1
UNIT
A
b
b
c
D
d
E
e
e
L
1
1
5.2
5.0
0.48
0.40
0.66
0.55
0.45
0.38
4.8
4.4
1.7
1.4
4.2
3.6
14.5
12.7
mm
2.54
1.27
2.5
Note
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
REFERENCES
OUTLINE
EUROPEAN
PROJECTION
ISSUE DATE
VERSION
IEC
JEDEC
JEITA
04-06-28
04-11-16
SOT54
TO-92
SC-43A
Fig 15. Package outline SOT54 (SC-43A/TO-92)
BC817_BC817W_BC337_6
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 06 — 17 November 2009
13 of 19
BC817; BC817W; BC337
NXP Semiconductors
45 V, 500 mA NPN general-purpose transistors
Plastic single-ended leaded (through hole) package; 3 leads (wide pitch)
SOT54A
c
E
A
L
d
L
b
2
1
e
1
e
D
2
3
b
1
L
1
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
(1)
L
1
UNIT
A
b
b
c
D
d
E
e
e
L
L
2
1
1
max.
5.2
5.0
0.48
0.40
0.66
0.55
0.45
0.38
4.8
4.4
1.7
1.4
4.2
3.6
14.5
12.7
3
2
mm
5.08
2.54
3
Note
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
REFERENCES
OUTLINE
EUROPEAN
PROJECTION
ISSUE DATE
VERSION
IEC
JEDEC
JEITA
97-05-13
04-06-28
SOT54A
Fig 16. Package outline SOT54A
BC817_BC817W_BC337_6
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 06 — 17 November 2009
14 of 19
BC817; BC817W; BC337
NXP Semiconductors
45 V, 500 mA NPN general-purpose transistors
Plastic single-ended leaded (through hole) package; 3 leads (on-circle)
SOT54 variant
c
e
1
L
2
E
d
A
L
b
1
2
e
1
e
D
3
b
1
L
1
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
(1)
L
L
2
1
UNIT
A
b
b
c
D
d
E
e
e
L
1
1
max
max
5.2
5.0
0.48
0.40
0.66
0.55
0.45
0.38
4.8
4.4
1.7
1.4
4.2
3.6
14.5
12.7
mm
2.54
1.27
2.5
2.5
Note
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
REFERENCES
OUTLINE
EUROPEAN
PROJECTION
ISSUE DATE
VERSION
IEC
JEDEC
JEITA
04-06-28
05-01-10
SOT54 variant
Fig 17. Package outline SOT54 variant
BC817_BC817W_BC337_6
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 06 — 17 November 2009
15 of 19
BC817; BC817W; BC337
NXP Semiconductors
45 V, 500 mA NPN general-purpose transistors
9. Packing information
Table 9.
Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.[1]
Type number
Package
Description
Packing quantity
3000
5000
10000
-235
-135
-
BC817
BC817W
BC337
BC337
BC337
BC337
SOT23
4 mm pitch, 8 mm tape and reel
4 mm pitch, 8 mm tape and reel
bulk, straight leads
-215
-
SOT323
SOT54
-115
-
-
-
-
-
-412
SOT54A
SOT54A
SOT 54 variant
tape and reel, wide pitch
-
-116
-126
-
tape ammopack, wide pitch
bulk, delta pinning (on-circle)
-
-112
[1] For further information and the availability of packing methods, see Section 12.
BC817_BC817W_BC337_6
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 06 — 17 November 2009
16 of 19
BC817; BC817W; BC337
NXP Semiconductors
45 V, 500 mA NPN general-purpose transistors
10. Revision history
Table 10. Revision history
Document ID
Release date
20091117
Data sheet status
Change notice
Supersedes
BC817_BC817W_
BC337_6
Product data sheet
-
BC817_BC817W_
BC337_5
Modifications:
• This data sheet was changed to reflect the new company name NXP Semiconductors,
including new legal definitions and disclaimers. No changes were made to the technical
content.
• Table 3 “Pinning”: updated
• Figure 13 “Package outline SOT23 (TO-236AB)”: updated
• Figure 14 “Package outline SOT323 (SC-70)”: updated
BC817_BC817W_
BC337_5
20050121
Product data sheet
CPCN200302007F1 BC817_4;
BC817W_SER_4;
BC337_3
BC817_4
20040105
20040225
19990415
Product specification
Product specification
Product specification
-
-
-
BC817_3
BC817W_SER_4
BC337_3
BC817W_SER_3
BC337_338_CNV_2
BC817_BC817W_BC337_6
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 06 — 17 November 2009
17 of 19
BC817; BC817W; BC337
NXP Semiconductors
45 V, 500 mA NPN general-purpose transistors
11. Legal information
11.1 Data sheet status
Document status[1][2]
Product status[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
11.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
11.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from national authorities.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
11.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
12. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
BC817_BC817W_BC337_6
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 06 — 17 November 2009
18 of 19
BC817; BC817W; BC337
NXP Semiconductors
45 V, 500 mA NPN general-purpose transistors
13. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1
1.2
1.3
1.4
General description . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data . . . . . . . . . . . . . . . . . . . . 1
2
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
Ordering information. . . . . . . . . . . . . . . . . . . . . 3
Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal characteristics . . . . . . . . . . . . . . . . . . 4
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 5
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 11
Packing information . . . . . . . . . . . . . . . . . . . . 16
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 17
3
4
5
6
7
8
9
10
11
Legal information. . . . . . . . . . . . . . . . . . . . . . . 18
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 18
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 18
11.1
11.2
11.3
11.4
12
13
Contact information. . . . . . . . . . . . . . . . . . . . . 18
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2009.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 17 November 2009
Document identifier: BC817_BC817W_BC337_6
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