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BC846BPN,125 [NXP]

TRANSISTOR 100 mA, 65 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, SC-88, 6 PIN, BIP General Purpose Small Signal;
BC846BPN,125
型号： BC846BPN,125
厂家： NXP    NXP
描述：

TRANSISTOR 100 mA, 65 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, SC-88, 6 PIN, BIP General Purpose Small Signal

开关 光电二极管 晶体管
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BC846BPN  
65 V, 100 mA NPN/PNP general-purpose transistor  
Rev. 01 — 17 July 2009  
Product data sheet  
1. Product profile  
1.1 General description  
NPN/PNP general-purpose transistor pair in a very small Surface-Mounted Device (SMD)  
plastic package.  
Table 1.  
Product overview  
Type number  
Package  
NXP  
NPN/NPN  
complement  
PNP/PNP  
complement  
JEITA  
BC846BPN  
SOT363  
SC-88  
BC846BS  
BC856BS  
1.2 Features  
I Low collector capacitance  
I Low collector-emitter saturation voltage  
I Closely matched current gain  
I Reduces number of components and board space  
I No mutual interference between the transistors  
I AEC-Q101 qualified  
1.3 Applications  
I General-purpose switching and amplification  
1.4 Quick reference data  
Table 2.  
Symbol Parameter  
Per transistor; for the PNP transistor with negative polarity  
Quick reference data  
Conditions  
Min  
Typ  
Max  
Unit  
VCEO  
collector-emitter voltage open base  
collector current  
-
-
-
-
65  
V
IC  
100  
mA  
TR1 (NPN)  
hFE  
DC current gain  
DC current gain  
VCE = 5 V; IC = 2 mA  
200  
200  
300  
290  
450  
450  
TR2 (PNP)  
hFE  
VCE = −5 V;  
IC = −2 mA  
BC846BPN  
NXP Semiconductors  
65 V, 100 mA NPN/PNP general-purpose transistor  
2. Pinning information  
Table 3.  
Pinning  
Pin  
1
Description  
emitter TR1  
base TR1  
Simplified outline  
Graphic symbol  
6
5
4
6
5
4
2
3
collector TR2  
emitter TR2  
base TR2  
TR2  
TR1  
4
1
2
3
5
1
2
3
6
collector TR1  
sym019  
3. Ordering information  
Table 4.  
Ordering information  
Type number  
Package  
Name  
Description  
Version  
BC846BPN  
SC-88  
plastic surface-mounted package; 6 leads  
SOT363  
4. Marking  
Table 5.  
Marking codes  
Type number  
Marking code[1]  
BC846BPN  
PJ*  
[1] * = -: made in Hong Kong  
* = p: made in Hong Kong  
* = t: made in Malaysia  
* = W: made in China  
BC846BPN_1  
© NXP B.V. 2009. All rights reserved.  
Product data sheet  
Rev. 01 — 17 July 2009  
2 of 15  
BC846BPN  
NXP Semiconductors  
65 V, 100 mA NPN/PNP general-purpose transistor  
5. Limiting values  
Table 6.  
Limiting values  
In accordance with the Absolute Maximum Rating System (IEC 60134).  
Symbol  
Parameter  
Conditions  
Min  
Max  
Unit  
Per transistor; for the PNP transistor with negative polarity  
VCBO  
VCEO  
VEBO  
IC  
collector-base voltage  
open emitter  
-
-
-
-
-
80  
65  
V
collector-emitter voltage open base  
V
emitter-base voltage  
collector current  
open collector  
6
V
100  
200  
mA  
mA  
ICM  
peak collector current  
single pulse;  
tp ≤ 1 ms  
IBM  
peak base current  
single pulse;  
tp ≤ 1 ms  
-
-
200  
200  
mA  
[1]  
[1]  
Ptot  
total power dissipation  
T
amb ≤ 25 °C  
amb ≤ 25 °C  
mW  
Per device  
Ptot  
Tj  
total power dissipation  
junction temperature  
ambient temperature  
storage temperature  
T
-
300  
mW  
°C  
-
150  
Tamb  
Tstg  
−55  
−65  
+150  
+150  
°C  
°C  
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard  
footprint.  
006aab618  
500  
P
tot  
(mW)  
400  
300  
200  
100  
0
−75  
−25  
25  
75  
125  
175  
(°C)  
T
amb  
FR4 PCB, standard footprint  
Fig 1. Per device: Power derating curve SOT363 (SC-88)  
BC846BPN_1  
© NXP B.V. 2009. All rights reserved.  
Product data sheet  
Rev. 01 — 17 July 2009  
3 of 15  
BC846BPN  
NXP Semiconductors  
65 V, 100 mA NPN/PNP general-purpose transistor  
6. Thermal characteristics  
Table 7.  
Symbol  
Thermal characteristics  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
Per transistor  
[1]  
[1]  
Rth(j-a)  
thermal resistance from in free air  
junction to ambient  
-
-
-
-
625  
230  
K/W  
K/W  
Rth(j-sp)  
thermal resistance from  
junction to solder point  
Per device  
Rth(j-a)  
thermal resistance from in free air  
junction to ambient  
-
-
416  
K/W  
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.  
006aab619  
3
10  
δ = 1  
Z
th(j-a)  
0.75  
0.33  
(K/W)  
0.50  
2
10  
0.20  
0.05  
0.10  
0.02  
10  
0.01  
0
1
10  
−5  
−4  
−3  
−2  
−1  
2
3
10  
10  
10  
10  
1
10  
10  
10  
t
(s)  
p
FR4 PCB, standard footprint  
Fig 2. Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration;  
typical values  
BC846BPN_1  
© NXP B.V. 2009. All rights reserved.  
Product data sheet  
Rev. 01 — 17 July 2009  
4 of 15  
BC846BPN  
NXP Semiconductors  
65 V, 100 mA NPN/PNP general-purpose transistor  
7. Characteristics  
Table 8.  
Characteristics  
Tamb = 25 °C unless otherwise specified.  
Symbol Parameter  
TR1 (NPN)  
Conditions  
Min  
Typ  
Max  
Unit  
ICBO  
collector-basecut-off VCB = 50 V; IE = 0 A  
-
-
-
-
15  
5
nA  
current  
VCB = 30 V; IE = 0 A;  
µA  
Tj = 150 °C  
IEBO  
hFE  
emitter-base cut-off VEB = 6 V; IC = 0 A  
current  
-
-
100  
nA  
DC current gain  
VCE = 5 V  
IC = 10 µA  
-
280  
300  
55  
-
IC = 2 mA  
200  
450  
100  
300  
850  
-
VCEsat  
VBEsat  
VBE  
collector-emitter  
saturation voltage  
IC = 10 mA; IB = 0.5 mA  
IC = 100 mA; IB = 5 mA  
IC = 10 mA; IB = 0.5 mA  
IC = 100 mA; IB = 5 mA  
-
-
-
-
mV  
mV  
mV  
mV  
200  
755  
1000  
base-emitter  
saturation voltage  
base-emitter voltage VCE = 5 V  
IC = 2 mA  
580  
650  
-
700  
770  
-
mV  
mV  
pF  
IC = 10 mA  
-
-
Cc  
Ce  
fT  
collector capacitance VCB = 10 V; IE = ie = 0 A;  
f = 1 MHz  
1.9  
emitter capacitance VEB = 0.5 V; IC = ic = 0 A;  
f = 1 MHz  
-
11  
-
-
-
-
pF  
transition frequency VCE = 5 V; IC = 10 mA;  
f = 100 MHz  
100  
-
MHz  
dB  
NF  
noise figure  
VCE = 5 V; IC = 0.2 mA;  
RS = 2 kΩ;  
1.9  
f = 10 Hz to 15.7 kHz  
VCE = 5 V; IC = 0.2 mA;  
RS = 2 kΩ; f = 1 kHz;  
B = 200 Hz  
-
3.1  
-
dB  
TR2 (PNP)  
ICBO  
collector-basecut-off VCB = −50 V; IE = 0 A  
-
-
-
-
−15  
−5  
nA  
current  
VCB = −30 V; IE = 0 A;  
µA  
Tj = 150 °C  
IEBO  
hFE  
emitter-base cut-off VEB = −6 V; IC = 0 A  
current  
-
-
−100  
nA  
DC current gain  
VCE = −5 V  
IC = −10 µA  
IC = −2 mA  
-
270  
290  
−55  
-
200  
-
450  
−100  
VCEsat  
collector-emitter  
saturation voltage  
IC = −10 mA;  
IB = −0.5 mA  
mV  
mV  
IC = −100 mA; IB = −5 mA  
-
−200  
−300  
BC846BPN_1  
© NXP B.V. 2009. All rights reserved.  
Product data sheet  
Rev. 01 — 17 July 2009  
5 of 15  
BC846BPN  
NXP Semiconductors  
65 V, 100 mA NPN/PNP general-purpose transistor  
Table 8.  
Characteristics …continued  
Tamb = 25 °C unless otherwise specified.  
Symbol Parameter Conditions  
Min  
Typ  
Max  
Unit  
VBEsat  
base-emitter  
saturation voltage  
IC = −10 mA;  
IB = −0.5 mA  
-
−755  
−850  
mV  
IC = −100 mA; IB = −5 mA  
-
−900  
-
mV  
VBE  
base-emitter voltage VCE = −5 V  
IC = −2 mA  
−600  
−650  
-
−750  
−820  
-
mV  
mV  
pF  
IC = −10 mA  
-
-
Cc  
Ce  
fT  
collector capacitance VCB = −10 V; IE = ie = 0 A;  
2.3  
f = 1 MHz  
emitter capacitance VEB = −0.5 V;  
-
10  
-
-
-
-
pF  
IC = ic = 0 A; f = 1 MHz  
transition frequency VCE = −5 V; IC = −10 mA;  
100  
-
MHz  
dB  
f = 100 MHz  
NF  
noise figure  
VCE = −5 V; IC = −0.2 mA;  
RS = 2 kΩ;  
1.6  
f = 10 Hz to 15.7 kHz  
VCE = −5 V; IC = −0.2 mA;  
RS = 2 kΩ; f = 1 kHz;  
B = 200 Hz  
-
2.9  
-
dB  
006aaa533  
006aaa532  
600  
0.20  
I
(mA) = 4.50  
4.05  
B
I
C
3.60  
(A)  
0.16  
h
FE  
3.15  
2.70  
2.25  
1.80  
1.35  
400  
200  
0
(1)  
(2)  
(3)  
0.12  
0.08  
0.04  
0
0.90  
0.45  
−2  
−1  
2
3
10  
10  
1
10  
10  
10  
(mA)  
0
2
4
6
8
10  
(V)  
I
V
CE  
C
VCE = 5 V  
Tamb = 25 °C  
(1) Tamb = 100 °C  
(2) Tamb = 25 °C  
(3) Tamb = −55 °C  
Fig 3. TR1 (NPN): DC current gain as a function of  
collector current; typical values  
Fig 4. TR1 (NPN): Collector current as a function of  
collector-emitter voltage; typical values  
BC846BPN_1  
© NXP B.V. 2009. All rights reserved.  
Product data sheet  
Rev. 01 — 17 July 2009  
6 of 15  
BC846BPN  
NXP Semiconductors  
65 V, 100 mA NPN/PNP general-purpose transistor  
006aaa536  
006aaa534  
1
1.3  
V
BEsat  
(V)  
V
BE  
1.1  
(V)  
0.8  
0.9  
0.7  
0.5  
0.3  
0.1  
(1)  
(2)  
(3)  
0.6  
0.4  
−1  
2
3
−1  
2
3
10  
1
10  
10  
10  
10  
1
10  
10  
10  
I
(mA)  
I (mA)  
C
C
VCE = 5 V; Tamb = 25 °C  
IC/IB = 20  
(1) Tamb = −55 °C  
(2) Tamb = 25 °C  
(3) Tamb = 100 °C  
Fig 5. TR1 (NPN): Base-emitter voltage as a function  
of collector current; typical values  
Fig 6. TR1 (NPN): Base-emitter saturation voltage as  
a function of collector current; typical values  
006aaa535  
006aaa537  
3
10  
10  
V
CEsat  
(V)  
f
T
(MHz)  
1
2
10  
−1  
10  
10  
(1)  
(2)  
(3)  
−2  
10  
−1  
2
3
2
10  
1
10  
10  
10  
1
10  
10  
I
(mA)  
I (mA)  
C
C
IC/IB = 20  
VCE = 5 V; Tamb = 25 °C  
(1) Tamb = 100 °C  
(2) Tamb = 25 °C  
(3) Tamb = −55 °C  
Fig 7. TR1 (NPN): Collector-emitter saturation  
voltage as a function of collector current;  
typical values  
Fig 8. TR1 (NPN): Transition frequency as a function  
of collector current; typical values  
BC846BPN_1  
© NXP B.V. 2009. All rights reserved.  
Product data sheet  
Rev. 01 — 17 July 2009  
7 of 15  
BC846BPN  
NXP Semiconductors  
65 V, 100 mA NPN/PNP general-purpose transistor  
006aab620  
006aaa539  
6
15  
C
e
C
c
(pF)  
(pF)  
13  
4
11  
9
2
0
7
5
0
2
4
6
8
10  
(V)  
0
2
4
6
V
V
(V)  
CB  
EB  
f = 1 MHz; Tamb = 25 °C  
f = 1 MHz; Tamb = 25 °C  
Fig 9. TR1 (NPN): Collector capacitance as a  
function of collector-base voltage; typical  
values  
Fig 10. TR1 (NPN): Emitter capacitance as a function  
of emitter-base voltage; typical values  
006aaa541  
006aaa540  
600  
−0.20  
I
(mA) = −2.5  
−2.25  
B
I
C
(A)  
h
FE  
−2.0  
−1.75  
−1.5  
−1.25  
−0.16  
(1)  
(2)  
400  
−0.12  
−0.08  
−0.04  
0
−1.0  
−0.75  
−0.5  
200  
(3)  
−0.25  
0
−10  
−2  
−1  
2
3
−10  
−1  
−10  
−10  
−10  
(mA)  
0
−2  
−4  
−6  
−8  
V
−10  
(V)  
I
C
CE  
VCE = −5 V  
Tamb = 25 °C  
(1) Tamb = 100 °C  
(2) Tamb = 25 °C  
(3) Tamb = −55 °C  
Fig 11. TR2 (PNP): DC current gain as a function of  
collector current; typical values  
Fig 12. TR2 (PNP): Collector current as a function of  
collector-emitter voltage; typical values  
BC846BPN_1  
© NXP B.V. 2009. All rights reserved.  
Product data sheet  
Rev. 01 — 17 July 2009  
8 of 15  
BC846BPN  
NXP Semiconductors  
65 V, 100 mA NPN/PNP general-purpose transistor  
006aaa544  
006aaa542  
−1  
−1.3  
V
BEsat  
(V)  
V
BE  
−1.1  
−0.9  
−0.7  
−0.5  
−0.3  
−0.1  
(V)  
−0.8  
(1)  
(2)  
(3)  
−0.6  
−0.4  
−1  
2
3
−1  
2
3
−10  
−1  
−10  
−10  
−10  
−10  
−1  
−10  
−10  
−10  
I
(mA)  
I (mA)  
C
C
VCE = −5 V; Tamb = 25 °C  
IC/IB = 20  
(1) Tamb = −55 °C  
(2) Tamb = 25 °C  
(3) Tamb = 100 °C  
Fig 13. TR2 (PNP): Base-emitter voltage as a function  
of collector current; typical values  
Fig 14. TR2 (PNP): Base-emitter saturation voltage as  
a function of collector current; typical values  
006aaa543  
006aaa545  
3
−10  
10  
V
CEsat  
(V)  
f
T
(MHz)  
−1  
2
10  
−1  
(1)  
(2)  
(3)  
−10  
−10  
−2  
10  
−1  
2
3
2
−10  
−1  
−10  
−10  
−10  
−1  
−10  
−10  
I
(mA)  
I (mA)  
C
C
IC/IB = 20  
VCE = −5 V; Tamb = 25 °C  
(1) Tamb = 100 °C  
(2) Tamb = 25 °C  
(3) Tamb = −55 °C  
Fig 15. TR2 (PNP): Collector-emitter saturation  
voltage as a function of collector current;  
typical values  
Fig 16. TR2 (PNP): Transition frequency as a function  
of collector current; typical values  
BC846BPN_1  
© NXP B.V. 2009. All rights reserved.  
Product data sheet  
Rev. 01 — 17 July 2009  
9 of 15  
BC846BPN  
NXP Semiconductors  
65 V, 100 mA NPN/PNP general-purpose transistor  
006aab623  
006aaa547  
10  
15  
C
c
(pF)  
C
e
(pF)  
13  
8
6
4
2
0
11  
9
7
5
0
−2  
−4  
−6  
−8  
V
−10  
(V)  
0
−2  
−4  
−6  
V
(V)  
CB  
EB  
f = 1 MHz; Tamb = 25 °C  
f = 1 MHz; Tamb = 25 °C  
Fig 17. TR2 (PNP): Collector capacitance as a function  
of collector-base voltage; typical values  
Fig 18. TR2 (PNP): Emitter capacitance as a function  
of emitter-base voltage; typical values  
BC846BPN_1  
© NXP B.V. 2009. All rights reserved.  
Product data sheet  
Rev. 01 — 17 July 2009  
10 of 15  
BC846BPN  
NXP Semiconductors  
65 V, 100 mA NPN/PNP general-purpose transistor  
8. Test information  
8.1 Quality information  
This product has been qualified in accordance with the Automotive Electronics Council  
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is  
suitable for use in automotive applications.  
9. Package outline  
2.2  
1.8  
1.1  
0.8  
0.45  
0.15  
6
5
4
2.2 1.35  
2.0 1.15  
pin 1  
index  
1
2
3
0.25  
0.10  
0.3  
0.2  
0.65  
1.3  
Dimensions in mm  
06-03-16  
Fig 19. Package outline SOT363 (SC-88)  
10. Packing information  
Table 9.  
Packing methods  
The indicated -xxx are the last three digits of the 12NC ordering code.[1]  
Type number Package Description  
Packing quantity  
3000  
10000  
-135  
[2]  
[3]  
BC846BPN  
SOT363 4 mm pitch, 8 mm tape and reel; T1  
4 mm pitch, 8 mm tape and reel; T2  
-115  
-125  
-165  
[1] For further information and the availability of packing methods, see Section 14.  
[2] T1: normal taping  
[3] T2: reverse taping  
BC846BPN_1  
© NXP B.V. 2009. All rights reserved.  
Product data sheet  
Rev. 01 — 17 July 2009  
11 of 15  
BC846BPN  
NXP Semiconductors  
65 V, 100 mA NPN/PNP general-purpose transistor  
11. Soldering  
2.65  
solder lands  
0.4 (2×)  
1.5  
2.35  
0.6  
(4×)  
0.5  
(4×)  
solder resist  
solder paste  
0.5  
(4×)  
0.6  
(2×)  
occupied area  
0.6  
(4×)  
Dimensions in mm  
1.8  
sot363_fr  
Fig 20. Reflow soldering footprint SOT363 (SC-88)  
1.5  
solder lands  
solder resist  
occupied area  
2.5  
0.3  
4.5  
1.5  
Dimensions in mm  
preferred transport  
direction during soldering  
1.3  
1.3  
2.45  
5.3  
sot363_fw  
Fig 21. Wave soldering footprint SOT363 (SC-88)  
BC846BPN_1  
© NXP B.V. 2009. All rights reserved.  
Product data sheet  
Rev. 01 — 17 July 2009  
12 of 15  
BC846BPN  
NXP Semiconductors  
65 V, 100 mA NPN/PNP general-purpose transistor  
12. Revision history  
Table 10. Revision history  
Document ID  
Release date  
20090717  
Data sheet status  
Change notice  
Supersedes  
BC846BPN_1  
Product data sheet  
-
-
BC846BPN_1  
© NXP B.V. 2009. All rights reserved.  
Product data sheet  
Rev. 01 — 17 July 2009  
13 of 15  
BC846BPN  
NXP Semiconductors  
65 V, 100 mA NPN/PNP general-purpose transistor  
13. Legal information  
13.1 Data sheet status  
Document status[1][2]  
Product status[3]  
Development  
Definition  
Objective [short] data sheet  
This document contains data from the objective specification for product development.  
This document contains data from the preliminary specification.  
This document contains the product specification.  
Preliminary [short] data sheet Qualification  
Product [short] data sheet Production  
[1]  
[2]  
[3]  
Please consult the most recently issued document before initiating or completing a design.  
The term ‘short data sheet’ is explained in section “Definitions”.  
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status  
information is available on the Internet at URL http://www.nxp.com.  
damage. NXP Semiconductors accepts no liability for inclusion and/or use of  
NXP Semiconductors products in such equipment or applications and  
therefore such inclusion and/or use is at the customer’s own risk.  
13.2 Definitions  
Draft — The document is a draft version only. The content is still under  
internal review and subject to formal approval, which may result in  
modifications or additions. NXP Semiconductors does not give any  
representations or warranties as to the accuracy or completeness of  
information included herein and shall have no liability for the consequences of  
use of such information.  
Applications — Applications that are described herein for any of these  
products are for illustrative purposes only. NXP Semiconductors makes no  
representation or warranty that such applications will be suitable for the  
specified use without further testing or modification.  
Limiting values — Stress above one or more limiting values (as defined in  
the Absolute Maximum Ratings System of IEC 60134) may cause permanent  
damage to the device. Limiting values are stress ratings only and operation of  
the device at these or any other conditions above those given in the  
Characteristics sections of this document is not implied. Exposure to limiting  
values for extended periods may affect device reliability.  
Short data sheet — A short data sheet is an extract from a full data sheet  
with the same product type number(s) and title. A short data sheet is intended  
for quick reference only and should not be relied upon to contain detailed and  
full information. For detailed and full information see the relevant full data  
sheet, which is available on request via the local NXP Semiconductors sales  
office. In case of any inconsistency or conflict with the short data sheet, the  
full data sheet shall prevail.  
Terms and conditions of sale — NXP Semiconductors products are sold  
subject to the general terms and conditions of commercial sale, as published  
at http://www.nxp.com/profile/terms, including those pertaining to warranty,  
intellectual property rights infringement and limitation of liability, unless  
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of  
any inconsistency or conflict between information in this document and such  
terms and conditions, the latter will prevail.  
13.3 Disclaimers  
General — Information in this document is believed to be accurate and  
reliable. However, NXP Semiconductors does not give any representations or  
warranties, expressed or implied, as to the accuracy or completeness of such  
information and shall have no liability for the consequences of use of such  
information.  
No offer to sell or license — Nothing in this document may be interpreted  
or construed as an offer to sell products that is open for acceptance or the  
grant, conveyance or implication of any license under any copyrights, patents  
or other industrial or intellectual property rights.  
Right to make changes — NXP Semiconductors reserves the right to make  
changes to information published in this document, including without  
limitation specifications and product descriptions, at any time and without  
notice. This document supersedes and replaces all information supplied prior  
to the publication hereof.  
Export control — This document as well as the item(s) described herein  
may be subject to export control regulations. Export might require a prior  
authorization from national authorities.  
Quick reference data — The Quick reference data is an extract of the  
product data given in the Limiting values and Characteristics sections of this  
document, and as such is not complete, exhaustive or legally binding.  
Suitability for use — NXP Semiconductors products are not designed,  
authorized or warranted to be suitable for use in medical, military, aircraft,  
space or life support equipment, nor in applications where failure or  
malfunction of an NXP Semiconductors product can reasonably be expected  
to result in personal injury, death or severe property or environmental  
13.4 Trademarks  
Notice: All referenced brands, product names, service names and trademarks  
are the property of their respective owners.  
14. Contact information  
For more information, please visit: http://www.nxp.com  
For sales office addresses, please send an email to: salesaddresses@nxp.com  
BC846BPN_1  
© NXP B.V. 2009. All rights reserved.  
Product data sheet  
Rev. 01 — 17 July 2009  
14 of 15  
BC846BPN  
NXP Semiconductors  
65 V, 100 mA NPN/PNP general-purpose transistor  
15. Contents  
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
1.1  
1.2  
1.3  
1.4  
General description. . . . . . . . . . . . . . . . . . . . . . 1  
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
Quick reference data. . . . . . . . . . . . . . . . . . . . . 1  
2
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2  
Ordering information. . . . . . . . . . . . . . . . . . . . . 2  
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2  
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3  
Thermal characteristics. . . . . . . . . . . . . . . . . . . 4  
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 5  
Test information. . . . . . . . . . . . . . . . . . . . . . . . 11  
Quality information . . . . . . . . . . . . . . . . . . . . . 11  
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 11  
Packing information. . . . . . . . . . . . . . . . . . . . . 11  
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12  
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 13  
3
4
5
6
7
8
8.1  
9
10  
11  
12  
13  
Legal information. . . . . . . . . . . . . . . . . . . . . . . 14  
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 14  
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 14  
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 14  
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 14  
13.1  
13.2  
13.3  
13.4  
14  
15  
Contact information. . . . . . . . . . . . . . . . . . . . . 14  
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15  
Please be aware that important notices concerning this document and the product(s)  
described herein, have been included in section ‘Legal information’.  
© NXP B.V. 2009.  
All rights reserved.  
For more information, please visit: http://www.nxp.com  
For sales office addresses, please send an email to: salesaddresses@nxp.com  
Date of release: 17 July 2009  
Document identifier: BC846BPN_1  

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