BC847BVN,115 [NXP]

BC847BVN - NPN/PNP general purpose transistor SOT 6-Pin;


型号：	BC847BVN,115
厂家：	NXP
描述：	BC847BVN - NPN/PNP general purpose transistor SOT 6-Pin 开关光电二极管晶体管
文件：	总8页 (文件大小：77K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

DISCRETE SEMICONDUCTORS

DATA SHEET

M3D744

BC847BVN

NPN/PNP general purpose

transistor

Product data sheet

2001 Nov 07

Supersedes data of 2001 Aug 30

NXP Semiconductors

Product data sheet

NPN/PNP general purpose transistor

BC847BVN

FEATURES

PINNING

• 300 mW total power dissipation

1, 4

2, 5

6, 3

DESCRIPTION

• Very small 1.6 mm x 1.2 mm ultra thin package

• Excellent coplanarity due to straight leads

emitter

base

TR1; TR2

• Replaces two SC-75/SC-89 packaged transistors on

same PCB area

collector

• Reduced required PCB area

• Reduced pick and place costs.

APPLICATIONS

handbook, halfpage

• General purpose switching and amplification

• Switch mode power supply complementary MOSFET

driver

TR2

TR1

• Complementary driver for audio amplifiers.

MAM443

DESCRIPTION

Top view

NPN/PNP transistor pair in a SOT666 plastic package.

MARKING

TYPE NUMBER

BC847BVN

MARKING CODE

Fig.1 Simplified outline (SOT666) and symbol.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

SYMBOL PARAMETER CONDITIONS

Per transistor; for the PNP transistor with negative polarity

MIN.

MAX.

UNIT

V_CBO

V_CEO

V_EBO

I_C

collector-base voltage

collector-emitter voltage

emitter-base voltage

collector current (DC)

peak collector current

peak base current

open emitter

open base

−

open collector

100

200

+150

150

+150

°C

I_CM

I_BM

P_tot

T_stg

T_j

total power dissipation

storage temperature

junction temperature

operating ambient temperature

T_amb≤ 25 °C; note 1

−65

−

°C

T_amb

−65

°C

Per device

P_tot

total power dissipation

T_amb≤ 25 °C; note 1

−

300

Note

1. Transistor mounted on an FR4 printed-circuit board.

2001 Nov 07

NXP Semiconductors

Product data sheet

NPN/PNP general purpose transistor

BC847BVN

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

CONDITIONS

notes 1 and 2

VALUE

UNIT

R_{th j-a}

thermal resistance from junction to ambient

416

K/W

Notes

1. Transistor mounted on an FR4 printed-circuit board.

2. The only recommended soldering is reflow soldering.

CHARACTERISTICS

T_amb= 25 °C unless otherwise specified.

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP. MAX. UNIT

Per transistor; for the PNP transistor with negative polarity

I_CBO

collector-base cut-off current

V_CB= 30 V; I_E= 0

−

μA

V_CB= 30 V; I_E= 0; T_j= 150 °C

V_EB= 5 V; I_C= 0

−

I_EBO

h_FE

emitter-base cut-off current

DC current gain

−

100

450

100

300

−

V_CE= 5 V; I_C= 2 mA

200

−

V_CEsat

collector-emitter saturation

voltage

I_C= 10 mA; I_B= 0.5 mA

I_C= 100 mA; I_B= 5 mA; note 1

I_C= 10 mA; I_B= 0.5 mA

−

V_BEsat

f_T

collector-emitter saturation

voltage

−

755

transition frequency

I_C= 10 mA; V_CE= 5 V; f = 100 MHz

100

−

MHz

NPN transistor

V_BE

C_c

base-emitter turn-on voltage

V_CE= 5 V; I_C= 2 mA

580

−

655

−

700

1.5

−

collector capacitance

emitter capacitance

V_CB= 10 V; I_E= I_e= 0; f = 1MHz

V_EB= 500 mV; I_C= I_c= 0; f = 1MHz

C_e

−

PNP transistor

V_BE

C_c

base-emitter turn-on voltage

V_CE= −5 V; I_C= −2 mA

600

−

655

−

750

2.2

−

collector capacitance

emitter capacitance

V_CB= −10 V; I_C= I_c= 0; f = 1MHz

V_EB= −500 mV; I_E= I_e= 0; f = 1MHz

C_e

−

Note

1. Pulse test: t_p≤ 300 μs; δ ≤ 0.02.

2001 Nov 07

NXP Semiconductors

Product data sheet

NPN/PNP general purpose transistor

BC847BVN

MLD703

MLD704

1200

600

handbook, halfpage

(1)

1000

(1)

(2)

400

800

600

400

200

(2)

(3)

200

(3)

−2

−1

(mA)

TR1 (NPN); V_CE= 5 V.

(1) _amb= 150 °C.

TR1 (NPN); V_CE= 5 V.

(1) _amb= −55 °C.

(2) T_amb= 25 °C.

(3) T_amb= −55 °C.

(2) T_amb= 25 °C.

(3) T_amb= 150 °C.

Fig.2 DC current gain as a function of collector

current: typical values.

Fig.3 Base-emitter voltage as a function of

collector current; typical values.

MLD705

MLD706

1200

handbook, halfpage

BEsat

(mV)

CEsat

(mV)

1000

(1)

(2)

800

(3)

600

(1)

(2)

(3)

400

200

−1

(mA)

TR1 (NPN); I_C/I_B= 20.

(1) T_amb= 150 °C.

(2) T_amb= 25 °C.

(3) T_amb= −55 °C.

TR1 (NPN); I_C/I_B= 20.

(1) T_amb= −55 °C.

(2) T_amb= 25 °C.

(3) T_amb= 150 °C.

Fig.4 Collector-emitter saturation voltage as a

function of collector current: typical values.

Fig.5 Base-emitter saturation voltage as a

function of collector current.

2001 Nov 07

NXP Semiconductors

Product data sheet

NPN/PNP general purpose transistor

BC847BVN

MLD699

MLD700

1000

−1200

handbook, halfpage

800

−1000

(1)

(2)

600

(1)

−800

−600

−400

−200

400

(2)

(3)

200

(3)

−10

−2

−1

−2

−1

−10

−1

−10

(mA)

−10

−1

−10

(mA)

TR2 (PNP); V_CE= −5 V.

(1) _amb= 150 °C.

TR2 (PNP); V_CE= −5 V.

(1) _amb= −55 °C.

(2) T_amb= 25 °C.

(3) T_amb= −55 °C.

(2) T_amb= 25 °C.

(3) T_amb= 150 °C.

Fig.6 DC current gain as a function of collector

current: typical values.

Fig.7 Base-emitter voltage as a function of

collector current; typical values.

MLD701

MLD702

−10

−1200

handbook, halfpage

BEsat

(mV)

CEsat

(mV)

−1000

(1)

−10

(2)

−800

(3)

−600

(1)

−10

(2)

−400

−200

(3)

−10

−1

−10

−1

−10

−1

−10

(mA)

TR2 (PNP); I_C/I_B= 20.

(1) T_amb= 150 °C.

(2) T_amb= 25 °C.

(3) T_amb= −55 °C.

TR2 (PNP); I_C/I_B= 20.

(1) T_amb= −55 °C.

(2) T_amb= 25 °C.

(3) T_amb= 150 °C.

Fig.8 Collector-emitter saturation voltage as a

function of collector current: typical values.

Fig.9 Base-emitter saturation voltage as a

function of collector current.

2001 Nov 07

NXP Semiconductors

Product data sheet

NPN/PNP general purpose transistor

BC847BVN

PACKAGE OUTLINE

Plastic surface mounted package; 6 leads

SOT666

pin 1 index

detail X

2 mm

scale

DIMENSIONS (mm are the original dimensions)

UNIT

0.6

0.5

0.27

0.17

0.18

0.08

1.7

1.5

1.3

1.1

1.7

1.5

0.3

0.1

1.0

0.5

0.1

REFERENCES

JEDEC

EUROPEAN

PROJECTION

OUTLINE

VERSION

ISSUE DATE

IEC

EIAJ

01-01-04

01-08-27

SOT666

2001 Nov 07

NXP Semiconductors

Product data sheet

NPN/PNP general purpose transistor

BC847BVN

DATA SHEET STATUS

DOCUMENT

STATUS⁽¹⁾

PRODUCT

STATUS⁽²⁾

DEFINITION

Objective data sheet

Development

This document contains data from the objective specification for product

development.

Preliminary data sheet

Product data sheet

Qualification

Production

This document contains data from the preliminary specification.

This document contains the product specification.

Notes

1. Please consult the most recently issued document before initiating or completing a design.

2. The product status of device(s) described in this document may have changed since this document was published

and may differ in case of multiple devices. The latest product status information is available on the Internet at

URL http://www.nxp.com.

DISCLAIMERS

above those given in the Characteristics sections of this

document is not implied. Exposure to limiting values for

extended periods may affect device reliability.

General ⎯ Information in this document is believed to be

accurate and reliable. However, NXP Semiconductors

does not give any representations or warranties,

expressed or implied, as to the accuracy or completeness

of such information and shall have no liability for the

consequences of use of such information.

Terms and conditions of sale ⎯ NXP Semiconductors

products are sold subject to the general terms and

conditions of commercial sale, as published at

http://www.nxp.com/profile/terms, including those

pertaining to warranty, intellectual property rights

infringement and limitation of liability, unless explicitly

otherwise agreed to in writing by NXP Semiconductors. In

case of any inconsistency or conflict between information

in this document and such terms and conditions, the latter

will prevail.

Right to make changes ⎯ NXP Semiconductors

reserves the right to make changes to information

published in this document, including without limitation

specifications and product descriptions, at any time and

without notice. This document supersedes and replaces all

information supplied prior to the publication hereof.

No offer to sell or license ⎯ Nothing in this document

may be interpreted or construed as an offer to sell products

that is open for acceptance or the grant, conveyance or

implication of any license under any copyrights, patents or

other industrial or intellectual property rights.

Suitability for use ⎯ NXP Semiconductors products are

not designed, authorized or warranted to be suitable for

use in medical, military, aircraft, space or life support

equipment, nor in applications where failure or malfunction

of an NXP Semiconductors product can reasonably be

expected to result in personal injury, death or severe

property or environmental damage. NXP Semiconductors

accepts no liability for inclusion and/or use of NXP

Semiconductors products in such equipment or

applications and therefore such inclusion and/or use is at

the customer’s own risk.

Export control ⎯ This document as well as the item(s)

described herein may be subject to export control

regulations. Export might require a prior authorization from

national authorities.

Quick reference data ⎯ The Quick reference data is an

extract of the product data given in the Limiting values and

Characteristics sections of this document, and as such is

not complete, exhaustive or legally binding.

Applications ⎯ Applications that are described herein for

any of these products are for illustrative purposes only.

NXP Semiconductors makes no representation or

warranty that such applications will be suitable for the

specified use without further testing or modification.

Limiting values ⎯ Stress above one or more limiting

values (as defined in the Absolute Maximum Ratings

System of IEC 60134) may cause permanent damage to

the device. Limiting values are stress ratings only and

operation of the device at these or any other conditions

2001 Nov 07

NXP Semiconductors

Customer notification

This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were

made to the content, except for the legal definitions and disclaimers.

Contact information

For additional information please visit: http://www.nxp.com

For sales offices addresses send e-mail to: salesaddresses@nxp.com

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed

without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license

under patent- or other industrial or intellectual property rights.

Printed in The Netherlands

613514/02/pp8

Date of release: 2001 Nov 07

Document order number: 9397 750 09039

BC847BVN,115 [NXP]

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