BC847BVN [NXP]
NPN/PNP general purpose transistor; NPN / PNP通用晶体管
| 型号： | BC847BVN |
| 厂家： | 
NXP |
| 描述： | NPN/PNP general purpose transistor |
| 文件： | 总8页 (文件大小：65K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
MD74
BC847BVN
NPN/PNP general purpose
transistor
Product specification
2001 Nov 07
Supersedes data of 2001 Aug 30
Philips Semiconductors
Product specification
NPN/PNP general purpose transistor
BC847BVN
FEATURES
PINNING
• 300 mW total power dissipation
PIN
1, 4
2, 5
6, 3
DESCRIPTION
• Very small 1.6 mm x 1.2 mm ultra thin package
• Excellent coplanarity due to straight leads
emitter
base
TR1; TR2
TR1; TR2
TR1; TR2
• Replaces two SC-75/SC-89 packaged transistors on
same PCB area
collector
• Reduced required PCB area
• Reduced pick and place costs.
APPLICATIONS
handbook, halfpage
6
5
4
6
5
4
• General purpose switching and amplification
• Switch mode power supply complementary MOSFET
driver
TR2
TR1
• Complementary driver for audio amplifiers.
1
2
3
1
2
3
MAM443
DESCRIPTION
Top view
NPN/PNP transistor pair in a SOT666 plastic package.
MARKING
TYPE NUMBER
BC847BVN
MARKING CODE
Fig.1 Simplified outline (SOT666) and symbol.
13
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS
Per transistor; for the PNP transistor with negative polarity
MIN.
MAX.
UNIT
VCBO
VCEO
VEBO
IC
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
open emitter
open base
−
−
−
−
−
−
−
50
V
V
V
45
open collector
5
100
200
200
200
+150
150
+150
mA
mA
mA
mW
°C
ICM
IBM
Ptot
Tstg
Tj
total power dissipation
storage temperature
junction temperature
operating ambient temperature
Tamb ≤ 25 °C; note 1
−65
−
°C
Tamb
−65
°C
Per device
Ptot
total power dissipation
Tamb ≤ 25 °C; note 1
−
300
mW
Note
1. Transistor mounted on an FR4 printed-circuit board.
2001 Nov 07
2
Philips Semiconductors
Product specification
NPN/PNP general purpose transistor
BC847BVN
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
notes 1 and 2
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient
416
K/W
Notes
1. Transistor mounted on an FR4 printed-circuit board.
2. The only recommended soldering is reflow soldering.
CHARACTERISTICS
T
amb = 25 °C unless otherwise specified.
SYMBOL PARAMETER
Per transistor; for the PNP transistor with negative polarity
CONDITIONS
MIN.
TYP. MAX. UNIT
ICBO
collector-base cut-off current
VCB = 30 V; IE = 0
−
−
15
nA
µA
nA
VCB = 30 V; IE = 0; Tj = 150 °C
VEB = 5 V; IC = 0
−
−
5
IEBO
hFE
emitter-base cut-off current
DC current gain
−
−
100
450
100
300
−
VCE = 5 V; IC = 2 mA
200
−
−
VCEsat
collector-emitter saturation
voltage
IC = 10 mA; IB = 0.5 mA
IC = 100 mA; IB = 5 mA; note 1
IC = 10 mA; IB = 0.5 mA
−
mV
mV
mV
−
−
VBEsat
fT
collector-emitter saturation
voltage
−
755
transition frequency
IC = 10 mA; VCE = 5 V; f = 100 MHz
100
−
−
MHz
NPN transistor
VBE
Cc
base-emitter turn-on voltage
VCE = 5 V; IC = 2 mA
580
−
655
−
700
1.5
−
mV
pF
pF
collector capacitance
emitter capacitance
VCB = 10 V; IE = Ie = 0; f = 1MHz
VEB = 500 mV; IC = Ic = 0; f = 1MHz
Ce
−
11
PNP transistor
VBE
Cc
base-emitter turn-on voltage
VCE = −5 V; IC = −2 mA
600
−
655
−
750
2.2
−
mV
pF
pF
collector capacitance
emitter capacitance
VCB = −10 V; IC = Ic = 0; f = 1MHz
VEB = −500 mV; IE = Ie = 0; f = 1MHz
Ce
−
10
Note
1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
2001 Nov 07
3
Philips Semiconductors
Product specification
NPN/PNP general purpose transistor
BC847BVN
MLD703
MLD704
1200
600
handbook, halfpage
handbook, halfpage
V
BE
(1)
mV
h
FE
1000
(1)
(2)
400
800
600
400
200
(2)
(3)
200
(3)
0
10
−2
−1
2
I
3
−1
2
3
10
10
1
10
10
10
(mA)
C
1
10
10
10
I
(mA)
C
TR1 (NPN); VCE = 5 V.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
TR1 (NPN); VCE = 5 V.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
(3) Tamb = 150 °C.
Fig.2 DC current gain as a function of collector
current: typical values.
Fig.3 Base-emitter voltage as a function of
collector current; typical values.
MLD705
MLD706
4
10
1200
handbook, halfpage
handbook, halfpage
V
BEsat
(mV)
V
CEsat
(mV)
1000
(1)
3
10
(2)
800
(3)
600
(1)
2
10
(2)
(3)
400
200
10
−1
2
3
−1
2
3
10
1
10
10
10
10
1
10
10
10
I
(mA)
I
(mA)
C
C
TR1 (NPN); IC/IB = 20.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
TR1 (NPN); IC/IB = 20.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 150 °C.
Fig.4 Collector-emitter saturation voltage as a
function of collector current: typical values.
Fig.5 Base-emitter saturation voltage as a
function of collector current.
2001 Nov 07
4
Philips Semiconductors
Product specification
NPN/PNP general purpose transistor
BC847BVN
MLD699
MLD700
1000
−1200
handbook, halfpage
handbook, halfpage
V
BE
h
FE
mV
800
−1000
(1)
(2)
600
(1)
−800
−600
−400
−200
400
(2)
(3)
200
(3)
0
−10
−2
−1
2
3
−2
−1
2
3
−10
−1
−10
−10
−10
(mA)
−10
−10
−1
−10
−10
−10
(mA)
I
I
C
C
TR2 (PNP); VCE = −5 V.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
TR2 (PNP); VCE = −5 V.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
(3) Tamb = 150 °C.
Fig.6 DC current gain as a function of collector
current: typical values.
Fig.7 Base-emitter voltage as a function of
collector current; typical values.
MLD701
MLD702
4
−10
−1200
handbook, halfpage
handbook, halfpage
V
BEsat
V
(mV)
CEsat
(mV)
−1000
(1)
3
−10
(2)
−800
(3)
−600
(1)
2
−10
(2)
−400
−200
(3)
−10
−1
2
3
−1
2
3
−10
−1
−10
−10
−10
−10
−1
−10
−10
−10
(mA)
I
(mA)
I
C
C
TR2 (PNP); IC/IB = 20.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
TR2 (PNP); IC/IB = 20.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 150 °C.
Fig.8 Collector-emitter saturation voltage as a
function of collector current: typical values.
Fig.9 Base-emitter saturation voltage as a
function of collector current.
2001 Nov 07
5
Philips Semiconductors
Product specification
NPN/PNP general purpose transistor
BC847BVN
PACKAGE OUTLINE
Plastic surface mounted package; 6 leads
SOT666
D
A
E
X
Y
S
S
H
E
6
5
4
pin 1 index
A
c
1
2
3
e
1
b
w
M
A
p
L
p
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
b
c
D
E
e
e
H
L
w
y
A
p
p
1
E
0.6
0.5
0.27
0.17
0.18
0.08
1.7
1.5
1.3
1.1
1.7
1.5
0.3
0.1
mm
1.0
0.5
0.1
0.1
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
01-01-04
01-08-27
SOT666
2001 Nov 07
6
Philips Semiconductors
Product specification
NPN/PNP general purpose transistor
BC847BVN
DATA SHEET STATUS
PRODUCT
DATA SHEET STATUS(1)
STATUS(2)
DEFINITIONS
Objective data
Development This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
Preliminary data
Qualification
This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
Product data
Production
This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Changes will be
communicated according to the Customer Product/Process Change
Notification (CPCN) procedure SNW-SQ-650A.
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
DEFINITIONS
DISCLAIMERS
Short-form specification
The data in a short-form
Life support applications
These products are not
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Right to make changes
Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
the use of any of these products, conveys no licence or title
under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.
Application information
Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
2001 Nov 07
7
Philips Semiconductors – a worldwide company
Contact information
For additional information please visit http://www.semiconductors.philips.com.
Fax: +31 40 27 24825
For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
© Koninklijke Philips Electronics N.V. 2001
SCA73
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
613514/02/pp8
Date of release: 2001 Nov 07
Document order number: 9397 750 09039
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