BC847BW/DG [NXP]
45 V, 100 mA NPN general-purpose transistors; 45 V , 100毫安NPN通用晶体管型号: | BC847BW/DG |
厂家: | NXP |
描述: | 45 V, 100 mA NPN general-purpose transistors |
文件: | 总15页 (文件大小:97K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
BC847/BC547 series
45 V, 100 mA NPN general-purpose transistors
Rev. 07 — 10 December 2008
Product data sheet
1. Product profile
1.1 General description
NPN general-purpose transistors in small plastic packages.
Table 1.
Product overview
Type number[1]
Package
NXP
PNP complement
JEITA
JEDEC
BC847
SOT23
-
TO-236AB
BC857
BC847A
BC857A
BC857B
-
BC847B
BC847B/DG
BC847C
BC857C
BC857W
BC857AW
BC857BW
-
BC847W
SOT323
SOT416
SC-70
SC-75
-
-
BC847AW
BC847BW
BC847BW/DG
BC847CW
BC847T
BC857CW
BC857T
BC857AT
-
BC847AT
BC847AT/DG
BC847BT
BC847CT
BC847AM
BC847BM
BC847CM
BC547[2]
BC857BT
BC857CT
BC857AM
BC857BM
BC857CM
BC557[2]
BC557B[2]
BC557C[2]
SOT883
SOT54
SC-101
SC-43A
-
TO-92
BC547B[2]
BC547C[2]
[1] /DG: halogen-free
[2] Also available in SOT54A and SOT54 variant packages (see Section 2).
BC847/BC547 series
NXP Semiconductors
45 V, 100 mA NPN general-purpose transistors
1.2 Features
I Low current
I Low voltage
I Three different gain selections
1.3 Applications
I General-purpose switching and amplification
1.4 Quick reference data
Table 2.
Quick reference data
Symbol Parameter
Conditions
Min
-
Typ
-
Max
45
Unit
V
VCEO
IC
collector-emitter voltage open base
collector current
-
-
100
800
220
450
800
mA
hFE
DC current gain
hFE group A
hFE group B
hFE group C
VCE = 5 V; IC = 2 mA
110
110
200
420
-
180
290
520
2. Pinning information
Table 3.
Pin
Pinning
Description
Simplified outline
Graphic symbol
SOT23, SOT323, SOT416
1
2
3
base
3
3
emitter
collector
1
2
1
2
sym021
006aaa144
SOT883
1
2
3
base
3
1
2
emitter
collector
3
1
Transparent
top view
2
sym021
BC847_BC547_SER_7
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 07 — 10 December 2008
2 of 15
BC847/BC547 series
NXP Semiconductors
45 V, 100 mA NPN general-purpose transistors
Table 3.
Pinning …continued
Pin
Description
Simplified outline
Graphic symbol
SOT54
1
2
3
emitter
base
3
collector
1
2
3
2
1
001aab347
sym026
SOT54A
1
2
3
emitter
base
3
collector
1
2
2
3
1
001aab348
sym026
SOT54 variant
1
2
3
emitter
base
3
collector
1
2
3
2
1
001aab447
sym026
3. Ordering information
Table 4.
Ordering information
Type number[1] Package
Name
Description
Version
BC847
-
plastic surface-mounted package; 3 leads
SOT23
BC847A
BC847B
BC847B/DG
BC847C
BC847W
SC-70
plastic surface-mounted package; 3 leads
SOT323
BC847AW
BC847BW
BC847BW/DG
BC847CW
BC847_BC547_SER_7
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 07 — 10 December 2008
3 of 15
BC847/BC547 series
NXP Semiconductors
45 V, 100 mA NPN general-purpose transistors
Table 4.
Ordering information …continued
Type number[1] Package
Name
Description
Version
BC847T
SC-75
plastic surface-mounted package; 3 leads
SOT416
BC847AT
BC847AT/DG
BC847BT
BC847CT
BC847AM
BC847BM
BC847CM
BC547[2]
SC-101
leadless ultra small plastic package; 3 solder lands;
body 1.0 × 0.6 × 0.5 mm
SOT883
SOT54
SC-43A plastic single-ended leaded (through hole) package;
3 leads
BC547B[2]
BC547C[2]
[1] /DG: halogen-free
[2] Also available in SOT54 and SOT54 variant packages (see Section 2 and Section 9).
4. Marking
Table 5.
Marking codes
Type number[1]
Marking code[2]
Type number[1]
BC847AT
BC847AT/DG
BC847BT
BC847CT
BC847AM
BC847BM
BC847CM
BC547
Marking code[2]
BC847
1H*
1E*
1F*
*BC
1G*
1H*
1E*
1F*
G9*
1G*
1N
1E
BC847A
B5
BC847B
1F
BC847B/DG
BC847C
1G
D4
BC847W
D5
BC847AW
BC847BW
BC847BW/DG
BC847CW
BC847T
D6
C547
C547B
C547C
-
BC547B
BC547C
-
[1] /DG: halogen-free
[2] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
BC847_BC547_SER_7
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 07 — 10 December 2008
4 of 15
BC847/BC547 series
NXP Semiconductors
45 V, 100 mA NPN general-purpose transistors
5. Limiting values
Table 6.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Conditions
Min
Max
50
Unit
V
collector-base voltage
open emitter
-
-
-
-
-
collector-emitter voltage open base
45
V
emitter-base voltage
collector current
open collector
6
V
100
200
mA
mA
ICM
peak collector current
single pulse;
tp ≤ 1 ms
IBM
Ptot
peak base current
single pulse;
tp ≤ 1 ms
-
100
mA
total power dissipation
SOT23
Tamb ≤ 25 °C
[1]
[1]
-
250
200
150
250
500
150
+150
+150
mW
mW
mW
mW
mW
°C
SOT323
-
[1]
SOT416
-
[2][3]
[1]
SOT883
-
SOT54
-
Tj
junction temperature
ambient temperature
storage temperature
-
Tamb
Tstg
−65
−65
°C
°C
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Reflow soldering is the only recommended soldering method.
[3] Device mounted on an FR4 PCB with 60 µm copper strip line, standard footprint.
6. Thermal characteristics
Table 7.
Thermal characteristics
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Rth(j-a)
thermal resistance from in free air
junction to ambient
[1]
[1]
SOT23
-
-
-
-
-
-
-
-
-
-
500
625
833
500
250
K/W
K/W
K/W
K/W
K/W
SOT323
SOT416
SOT883
SOT54
[1]
[2][3]
[1]
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Reflow soldering is the only recommended soldering method.
[3] Device mounted on an FR4 PCB with 60 µm copper strip line, standard footprint.
BC847_BC547_SER_7
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 07 — 10 December 2008
5 of 15
BC847/BC547 series
NXP Semiconductors
45 V, 100 mA NPN general-purpose transistors
7. Characteristics
Table 8.
Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter Conditions
collector-basecut-off VCB = 30 V; IE = 0 A
Min
Typ
Max
15
5
Unit
nA
ICBO
-
-
-
-
current
VCB = 30 V; IE = 0 A;
µA
Tj = 150 °C
IEBO
hFE
emitter-base cut-off VEB = 5 V; IC = 0 A
current
-
-
100
nA
DC current gain
hFE group A
hFE group B
hFE group C
DC current gain
hFE group A
hFE group B
hFE group C
VCE = 5 V; IC = 10 µA
VCE = 5 V; IC = 10 µA
VCE = 5 V; IC = 10 µA
VCE = 5 V; IC = 2 mA
VCE = 5 V; IC = 2 mA
VCE = 5 V; IC = 2 mA
VCE = 5 V; IC = 2 mA
IC = 10 mA; IB = 0.5 mA
IC = 100 mA; IB = 5 mA
IC = 10 mA; IB = 0.5 mA
IC = 100 mA; IB = 5 mA
-
90
-
-
150
270
-
-
-
-
110
800
220
450
800
200
400
-
110
180
290
520
90
200
420
VCEsat
VBEsat
VBE
collector-emitter
saturation voltage
-
mV
mV
mV
mV
mV
mV
pF
[1]
[2]
[2]
[2]
-
200
700
900
660
-
base-emitter
saturation voltage
-
-
-
base-emitter voltage IC = 2 mA; VCE = 5 V
IC = 10 mA; VCE = 5 V
580
700
770
1.5
-
-
Cc
Ce
fT
collector capacitance IE = ie = 0 A; VCB = 10 V;
f = 1 MHz
-
emitter capacitance IC = ic = 0 A; VEB = 0.5 V;
f = 1 MHz
-
11
-
-
pF
transition frequency IC = 10 mA; VCE = 5 V;
f = 100 MHz
100
-
-
MHz
dB
NF
noise figure
IC = 200 µA; VCE = 5 V;
RS = 2 kΩ; f = 1 kHz;
B = 200 Hz
2
10
[1] Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
[2] VBE decreases by approximately 2 mV/K with increasing temperature.
BC847_BC547_SER_7
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 07 — 10 December 2008
6 of 15
BC847/BC547 series
NXP Semiconductors
45 V, 100 mA NPN general-purpose transistors
mgt723
mgt724
400
1200
V
BE
(mV)
1000
h
FE
(1)
300
(1)
(2)
800
600
400
200
0
(2)
(3)
200
100
0
(3)
−1
2
3
−1
2
3
10
1
10
10
10
10
1
10
10
10
I
(mA)
I (mA)
C
C
VCE = 5 V
VCE = 5 V
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 150 °C
Fig 1. Selection A: DC current gain as a function of
collector current; typical values
Fig 2. Selection A: Base-emitter voltage as a
function of collector current; typical values
mgt725
mgt726
3
10
1200
V
BEsat
(mV)
1000
V
(mV)
CEsat
(1)
(2)
800
600
400
200
0
2
10
(1)
(2)
(3)
(3)
10
10
−1
2
3
−1
2
3
1
10
10
10
10
1
10
10
10
I
(mA)
I (mA)
C
C
IC/IB = 20
IC/IB = 10
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 150 °C
Fig 3. Selection A: Collector-emitter saturation
voltage as a function of collector current;
typical values
Fig 4. Selection A: Base-emitter saturation voltage
as a function of collector current; typical
values
BC847_BC547_SER_7
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 07 — 10 December 2008
7 of 15
BC847/BC547 series
NXP Semiconductors
45 V, 100 mA NPN general-purpose transistors
mgt727
mgt728
600
1200
V
BE
h
FE
(mV)
1000
(1)
(2)
500
(1)
(2)
400
300
200
100
0
800
600
400
200
0
(3)
(3)
−2
−1
2
3
−1
2
3
10
10
1
10
10
10
10
1
10
10
10
I
(mA)
I
(mA)
C
C
VCE = 5 V
VCE = 5 V
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 150 °C
Fig 5. Selection B: DC current gain as a function of
collector current; typical values
Fig 6. Selection B: Base-emitter voltage as a
function of collector current; typical values
mgt729
mgt730
4
10
1200
V
BEsat
(mV)
1000
V
CEsat
(mV)
(1)
(2)
3
10
800
600
400
200
0
(3)
2
10
(1)
(3) (2)
10
10
−1
2
3
−1
2
3
1
10
10
10
10
1
10
10
10
I
(mA)
I (mA)
C
C
IC/IB = 20
IC/IB = 10
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 150 °C
Fig 7. Selection B: Collector-emitter saturation
voltage as a function of collector current;
typical values
Fig 8. Selection B: Base-emitter saturation voltage
as a function of collector current; typical
values
BC847_BC547_SER_7
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 07 — 10 December 2008
8 of 15
BC847/BC547 series
NXP Semiconductors
45 V, 100 mA NPN general-purpose transistors
mgt731
mgt732
1200
1200
V
BE
h
FE
(mV)
1000
1000
800
600
400
200
0
(1)
(1)
(2)
800
600
400
200
0
(2)
(3)
(3)
−2
−1
2
3
−1
2
3
10
10
1
10
10
10
10
1
10
10
10
I
(mA)
I
(mA)
C
C
VCE = 5 V
VCE = 5 V
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 150 °C
Fig 9. Selection C: DC current gain as a function of
collector current; typical values
Fig 10. Selection C: Base-emitter voltage as a
function of collector current; typical values
mgt733
mgt734
4
10
1200
V
BEsat
(mV)
1000
V
CEsat
(mV)
(1)
(2)
3
10
800
600
400
200
0
(3)
2
10
(1)
(3) (2)
10
10
−1
2
3
−1
2
3
1
10
10
10
10
1
10
10
10
I
(mA)
I (mA)
C
C
IC/IB = 20
IC/IB = 10
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 150 °C
Fig 11. Selection C: Collector-emitter saturation
voltage as a function of collector current;
typical values
Fig 12. Selection C: Base-emitter saturation voltage
as a function of collector current; typical
values
BC847_BC547_SER_7
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 07 — 10 December 2008
9 of 15
BC847/BC547 series
NXP Semiconductors
45 V, 100 mA NPN general-purpose transistors
8. Package outline
3.0
2.8
1.1
0.9
2.2
1.8
1.1
0.8
0.45
0.15
3
3
0.45
0.15
2.5 1.4
2.1 1.2
2.2 1.35
2.0 1.15
1
2
1
2
0.4
0.3
0.25
0.10
0.48
0.38
0.15
0.09
1.9
1.3
Dimensions in mm
04-11-04
Dimensions in mm
04-11-04
Fig 13. Package outline SOT23 (TO-236AB)
Fig 14. Package outline SOT323 (SC-70)
0.62
0.55
0.55
0.47
1.8
1.4
0.95
0.60
0.50
0.46
3
0.45
0.15
3
0.30
0.22
1.75 0.9
1.45 0.7
1.02
0.95
0.65
0.30
0.22
2
1
1
2
0.30
0.15
0.25
0.10
0.20
0.12
1
0.35
Dimensions in mm
04-11-04
Dimensions in mm
03-04-03
Fig 15. Package outline SOT416 (SC-75)
Fig 16. Package outline SOT883 (SC-101)
0.45
0.38
4.2
3.6
0.45
0.38
4.2
3.6
0.48
0.40
3 max
1
0.48
0.40
1
2
3
2
4.8
4.4
5.08
4.8
4.4
2.54
1.27
2.54
3
5.2
5.0
14.5
12.7
5.2
5.0
14.5
12.7
Dimensions in mm
04-11-16
Dimensions in mm
04-06-28
Fig 17. Package outline SOT54 (SC-43A/TO-92)
Fig 18. Package outline SOT54A
BC847_BC547_SER_7
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 07 — 10 December 2008
10 of 15
BC847/BC547 series
NXP Semiconductors
45 V, 100 mA NPN general-purpose transistors
0.45
0.38
4.2
3.6
1.27
2.5
0.48
max
0.40
1
2
4.8
4.4
2.54
1.27
3
5.2
5.0
14.5
12.7
Dimensions in mm
05-01-10
Fig 19. Package outline SOT54 variant
9. Packing information
Table 9.
Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.[1]
Type number[2] Package
Description
Packing quantity
3000
5000
10000
BC847
SOT23
4 mm pitch, 8 mm tape and reel
-215
-
-235
BC847A
BC847B
BC847B/DG
BC847C
BC847W
BC847AW
BC847BW
BC847BW/DG
BC847CW
BC847T
SOT323
SOT416
4 mm pitch, 8 mm tape and reel
4 mm pitch, 8 mm tape and reel
-115
-115
-
-
-135
-135
BC847AT
BC847AT/DG
BC847BT
BC847CT
BC847AM
BC847BM
BC847CM
BC547
SOT883
SOT54
2 mm pitch, 8 mm tape and reel
bulk, straight leads
-
-
-
-315
-
-412
BC547B
BC547C
BC847_BC547_SER_7
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 07 — 10 December 2008
11 of 15
BC847/BC547 series
NXP Semiconductors
45 V, 100 mA NPN general-purpose transistors
Table 9.
Packing methods …continued
The indicated -xxx are the last three digits of the 12NC ordering code.[1]
Type number[2] Package
Description
Packing quantity
3000
5000
10000
BC547
SOT54A
SOT54A
tape and reel, wide pitch
-
-
-116
BC547B
BC547C
BC547
tape ammopack, wide pitch
-
-
-
-126
-
BC547B
BC547C
BC547
SOT54 variant bulk, delta pinning
-112
BC547B
BC547C
[1] For further information and the availability of packing methods, see Section 12.
[2] /DG: halogen-free
BC847_BC547_SER_7
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 07 — 10 December 2008
12 of 15
BC847/BC547 series
NXP Semiconductors
45 V, 100 mA NPN general-purpose transistors
10. Revision history
Table 10. Revision history
Document ID
Release date
20081210
Data sheet status
Change notice Supersedes
BC847_BC547_SER_7
Modifications:
Product data sheet
-
BC847_BC547_SER_6
• The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
• Legal texts have been adapted to the new company name where appropriate.
• Table 1 “Product overview”: enhanced
• Table 4 “Ordering information”: enhanced
• Table 5 “Marking codes”: enhanced
• Table 6 “Limiting values”: IEBO conditions amended
• Table 8 “Characteristics”: symbol N for parameter noise figure redefined to NF
• Table 9 “Packing methods”: enhanced
• Section 11 “Legal information”: updated
BC847_BC547_SER_6
20050519
Product data sheet
-
BC846_BC847_ BC848_5,
BC847M_SERIES_2,
BC846T_847T_ SERIES_3,
BC846W_BC847W_BC848W_4,
BC546_547_4
BC846_BC847_BC848_5
BC847M_SERIES_2
20040206
20040310
Product specification -
Product specification -
Product specification -
Product specification -
BC846_BC847_ BC848_4
BC847M_SERIES_1
BC846T_847T_2
BC846T_847T_SERIES_3 20001115
BC846W_BC847W_
BC848W_4
20020204
BC846W_847W_3
BC546_547_4
20041125
Product specification -
BC546_547_3
BC847_BC547_SER_7
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 07 — 10 December 2008
13 of 15
BC847/BC547 series
NXP Semiconductors
45 V, 100 mA NPN general-purpose transistors
11. Legal information
11.1 Data sheet status
Document status[1][2]
Product status[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
11.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
11.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
11.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
12. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
BC847_BC547_SER_7
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 07 — 10 December 2008
14 of 15
BC847/BC547 series
NXP Semiconductors
45 V, 100 mA NPN general-purpose transistors
13. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1
1.2
1.3
1.4
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Quick reference data. . . . . . . . . . . . . . . . . . . . . 2
2
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
Ordering information. . . . . . . . . . . . . . . . . . . . . 3
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 5
Thermal characteristics. . . . . . . . . . . . . . . . . . . 5
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10
Packing information. . . . . . . . . . . . . . . . . . . . . 11
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 13
3
4
5
6
7
8
9
10
11
Legal information. . . . . . . . . . . . . . . . . . . . . . . 14
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 14
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 14
11.1
11.2
11.3
11.4
12
13
Contact information. . . . . . . . . . . . . . . . . . . . . 14
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2008.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 10 December 2008
Document identifier: BC847_BC547_SER_7
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