BC849CT/R [NXP]
TRANSISTOR 100 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB, PLASTIC PACKAGE-3, BIP General Purpose Small Signal;型号: | BC849CT/R |
厂家: | NXP |
描述: | TRANSISTOR 100 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB, PLASTIC PACKAGE-3, BIP General Purpose Small Signal 晶体 晶体管 |
文件: | 总8页 (文件大小:107K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
BC849; BC850
NPN general purpose transistors
Product data sheet
2004 Jan 16
Supersedes data of 1999 Apr 08
NXP Semiconductors
Product data sheet
NPN general purpose transistors
BC849; BC850
FEATURES
PINNING
• Low current (max. 100 mA)
• Low voltage (max. 45 V).
PIN
1
DESCRIPTION
base
2
emitter
collector
APPLICATIONS
3
• General purpose switching and amplification.
DESCRIPTION
NPN transistor in a SOT23 plastic package.
PNP complements: BC859 and BC860.
handbook, halfpage
3
3
MARKING
1
TYPE
NUMBER
MARKING
CODE(1)
TYPE
NUMBER
MARKING
CODE(1)
2
1
2
BC849B
BC849C
2B*
2C*
BC850B
BC850C
2F*
Top view
MAM255
2G*
Note
1. * = p : Made in Hong Kong.
* = t : Made in Malaysia.
* = W : Made in China.
Fig.1 Simplified outline (SOT23) and symbol.
ORDERING INFORMATION
TYPE
PACKAGE
DESCRIPTION
plastic surface mounted package; 3 leads
NUMBER
NAME
VERSION
BC849B
BC849C
BC850B
BC850C
−
SOT23
2004 Jan 16
2
NXP Semiconductors
Product data sheet
NPN general purpose transistors
BC849; BC850
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
collector-base voltage
CONDITIONS
open emitter
MIN.
MAX.
UNIT
VCBO
BC849
−
−
30
V
V
BC850
50
VCEO
collector-emitter voltage
BC849
open base
−
−
−
−
−
−
−
30
V
V
V
BC850
45
VEBO
IC
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
open collector
5
100
200
200
250
+150
150
+150
mA
mA
mA
mW
°C
ICM
IBM
Ptot
Tstg
Tj
Tamb ≤ 25 °C; note 1
−65
−
°C
Tamb
−65
°C
Note
1. Transistor mounted on an FR4 printed-circuit board.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth(j-a)
thermal resistance from junction to ambient note 1
500
K/W
Note
1. Transistor mounted on an FR4 printed-circuit board.
2004 Jan 16
3
NXP Semiconductors
Product data sheet
NPN general purpose transistors
BC849; BC850
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
ICBO
PARAMETER
CONDITIONS
IE = 0; VCB = 30 V
MIN. TYP. MAX. UNIT
collector cut-off current
−
−
−
−
−
−
15
5
nA
μA
nA
IE = 0; VCB = 30 V; Tj = 150 °C
IEBO
hFE
emitter cut-off current
DC current gain
IC = 0; VEB = 5 V
100
IC = 10 μA; VCE = 5 V;
see Figs 2 and 3
BC849B; BC850B
BC849C; BC850C
DC current gain
−
−
240
450
−
−
IC = 2 mA; VCE = 5 V;
see Figs 2 and 3
BC849B; BC850B
BC849C; BC850C
200
420
−
290
520
90
450
800
250
600
−
VCEsat
VBEsat
VBE
collector-emitter saturation
voltage
IC = 10 mA; IB = 0.5 mA
mV
mV
mV
mV
mV
mV
pF
IC = 100 mA; IB = 5 mA
−
200
700
900
660
−
base-emitter saturation voltage
IC = 10 mA; IB = 0.5 mA; note 1
IC = 100 mA; IB = 5 mA; note 1
IC = 2 mA; VCE = 5 V; note 2
IC = 10 mA; VCE = 5 V; note 2
IE = ie = 0; VCB = 10 V; f = 1 MHz
IC = ic = 0; VEB = 500 mV; f = 1 MHz
−
−
−
base-emitter voltage
580
−
700
770
−
Cc
Ce
fT
collector capacitance
emitter capacitance
transition frequency
noise figure
−
2.5
11
−
−
pF
IC = 10 mA; VCE = 5 V; f = 100 MHz 100
−
−
MHz
dB
F
IC = 200 μA; VCE = 5 V; RS = 2 kΩ;
−
−
4
f = 10 Hz to 15.7 kHz
IC = 200 μA; VCE = 5 V; RS = 2 kΩ;
−
−
4
dB
f = 1 kHz; B = 200 Hz
Notes
1. VBEsat decreases by about 1.7 mV/K with increasing temperature.
2. VBE decreases by about 2 mV/K with increasing temperature.
2004 Jan 16
4
NXP Semiconductors
Product data sheet
NPN general purpose transistors
BC849; BC850
MBH724
300
V
= 5 V
h
CE
FE
200
100
0
10
−2
−1
2
3
10
1
10
10
10
I
(mA)
C
BC849B; BC850B.
Fig.2 DC current gain; typical values.
MBH725
600
V
= 5 V
CE
h
FE
400
200
0
10
−2
−1
2
3
10
1
10
10
10
I
(mA)
C
BC849C; BC850C.
Fig.3 DC current gain; typical values.
5
2004 Jan 16
NXP Semiconductors
Product data sheet
NPN general purpose transistors
BC849; BC850
PACKAGE OUTLINE
Plastic surface-mounted package; 3 leads
SOT23
D
B
E
A
X
H
v
M
A
E
3
Q
A
A
1
c
1
2
e
b
w M
B
1
L
p
p
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
1
UNIT
b
c
D
E
e
e
H
L
Q
v
w
A
p
p
1
E
max.
1.1
0.9
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
2.5
2.1
0.45
0.15
0.55
0.45
mm
0.1
1.9
0.95
0.2
0.1
REFERENCES
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
JEDEC
JEITA
04-11-04
06-03-16
SOT23
TO-236AB
2004 Jan 16
6
NXP Semiconductors
Product data sheet
NPN general purpose transistors
BC849; BC850
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Product data sheet
Qualification
Production
This document contains data from the preliminary specification.
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DISCLAIMERS
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
General ⎯ Information in this document is believed to be
accurate and reliable. However, NXP Semiconductors
does not give any representations or warranties,
expressed or implied, as to the accuracy or completeness
of such information and shall have no liability for the
consequences of use of such information.
Terms and conditions of sale ⎯ NXP Semiconductors
products are sold subject to the general terms and
conditions of commercial sale, as published at
http://www.nxp.com/profile/terms, including those
pertaining to warranty, intellectual property rights
infringement and limitation of liability, unless explicitly
otherwise agreed to in writing by NXP Semiconductors. In
case of any inconsistency or conflict between information
in this document and such terms and conditions, the latter
will prevail.
Right to make changes ⎯ NXP Semiconductors
reserves the right to make changes to information
published in this document, including without limitation
specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.
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may be interpreted or construed as an offer to sell products
that is open for acceptance or the grant, conveyance or
implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Suitability for use ⎯ NXP Semiconductors products are
not designed, authorized or warranted to be suitable for
use in medical, military, aircraft, space or life support
equipment, nor in applications where failure or malfunction
of an NXP Semiconductors product can reasonably be
expected to result in personal injury, death or severe
property or environmental damage. NXP Semiconductors
accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at
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Export control ⎯ This document as well as the item(s)
described herein may be subject to export control
regulations. Export might require a prior authorization from
national authorities.
Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
2004 Jan 16
7
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimers. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.
Contact information
For additional information please visit: http://www.nxp.com
For sales offices addresses send e-mail to: salesaddresses@nxp.com
© NXP B.V. 2009
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
R75/06/pp8
Date of release: 2004 Jan 16
Document order number: 9397 750 12396
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